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Timothy Bullough

Dr Timothy Bullough

Contact

Timbull@liverpool.ac.uk

+44 (0)151 794 5399

Publications

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2018

Composition-variations and phase-segregation in InGaAsN grown by CBE

Thomas, S., Bullough, T. J., Joyce, T. B., Zheng, J. G., & Chalker, P. R. (2001). Composition-variations and phase-segregation in InGaAsN grown by CBE. MICROSCOPY OF SEMICONDUCTING MATERIALS 2001, (169), 123-126. Retrieved from https://www.webofscience.com/

Journal article

Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells

Gass, M. H., Bullough, T. J., Papworth, A., Thomas, S., Joyce, T. B., Chalker, P. R., . . . Balkan, N. (2003). Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells. MICROSCOPY OF SEMICONDUCTING MATERIALS 2003, (180), 225-228. Retrieved from https://www.webofscience.com/

Journal article

2011

Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN-AlGaN axial heterostructure nanowires

Lari, L., Walther, T., Gass, M. H., Geelhaar, L., Cheze, C., Riechert, H., . . . Chalker, P. R. (2011). Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN-AlGaN axial heterostructure nanowires. JOURNAL OF CRYSTAL GROWTH, 327(1), 27-34. doi:10.1016/j.jcrysgro.2011.06.004

DOI
10.1016/j.jcrysgro.2011.06.004
Journal article

2010

'GaN, AlGaN, HfO2 based radial heterostructure nanowires'

Lari, L., Walther, T., Black, K., Murray, R. T., Bullough, T. J., Chalker, P. R., . . . Riechert, H. (2010). 'GaN, AlGaN, HfO2 based radial heterostructure nanowires'. Journal of Physics: Conference Series, 209(1).

Journal article

2009

Materials thoughts - Student opinions of higher education in materials science

Bullough, T. J., & Taktak, D. (2009). Materials thoughts - Student opinions of higher education in materials science. Materials World Magazine, ?.

Journal article

2008

A national subject profile for materials: Views of graduates and materials teaching staff

Bullough, T., Goodhew, P., Taktak, D., & Mannis, A. (2008). A national subject profile for materials: Views of graduates and materials teaching staff. Engineering Education, 3(2), 2-10. doi:10.11120/ened.2008.03020002

DOI
10.11120/ened.2008.03020002
Journal article

Defect characterization and analysis of III-V nanowires grown by Ni-promoted MBE

Lari, L., Murray, R. T., Gass, M. H., Bullough, T. J., Chalker, P. R., Kioseoglou, J., . . . Riechert, H. (2008). Defect characterization and analysis of III-V nanowires grown by Ni-promoted MBE. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 205(11), 2589-2592. doi:10.1002/pssa.200780132

DOI
10.1002/pssa.200780132
Journal article

Thermal stability of C-doped GaAs/AlAs DBR structures

Liang, M. S., Bullough, T. J., & Joyce, T. B. (2008). Thermal stability of C-doped GaAs/AlAs DBR structures. Solid-State Electronics, 52(8), 1256-1259. doi:10.1016/j.sse.2008.06.015

DOI
10.1016/j.sse.2008.06.015
Journal article

Nanoscale compositional analysis of Ni-based seed crystallites associated with GaN nanowire growth

Lari, L., Murray, R. T., Bullough, T. J., Chalker, P. R., Gass, M., Cheze, C., . . . Riechert, H. (2008). Nanoscale compositional analysis of Ni-based seed crystallites associated with GaN nanowire growth. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 40(7), 2457-2461. doi:10.1016/j.physe.2007.10.003

DOI
10.1016/j.physe.2007.10.003
Journal article

Do materials science and engineering students learn the workplace skills, attitudes and abilities that they need as graduates?

Taktak, D., Bullough, T. J., & Goodhew, P. J. (2008). Do materials science and engineering students learn the workplace skills, attitudes and abilities that they need as graduates?. In EE2008. Loughborough, UK: Higher Education Academy Engineering Subject Centre and the UK Centre for Materials Education.

Conference Paper

Electron Microscopy Analysis of AlGaN/GaN Nanowires Grown by Catalyst-Assisted Molecular Beam Epitaxy

Lari, L., Murray, R. T., Gass, M., Bullough, T. J., Chalker, P. R., Cheze, C., . . . Riechert, H. (2008). Electron Microscopy Analysis of AlGaN/GaN Nanowires Grown by Catalyst-Assisted Molecular Beam Epitaxy. MICROSCOPY OF SEMICONDUCTING MATERIALS 2007, 120, 221-+. Retrieved from https://www.webofscience.com/

Journal article

Materials in demand?

Bullough, T. J. (2008). Materials in demand?. Materials World Magazine, ?. Retrieved from http://www.iom3.org/news/materials-demand

Journal article

Materials in progress in higher education

Bullough, T. J., & Taktak, D. (2008). Materials in progress in higher education. Materials World Magazine, ?.

Journal article

National Subject Profile for Higher Education Programmes in: Materials

UKCME., Bullough, T. J., & Taktak, D. (2008). National Subject Profile for Higher Education Programmes in: Materials. York: Higher Education Academy. Retrieved from http://www.materials.ac.uk/subject-profile/NSP-report.pdf

Report

2007

Active Learning in Materials Science and Engineering

Goodhew, P. J., & Bullough, T. J. (2007). Active Learning in Materials Science and Engineering. Journal of Materials Education, 28(3-6), 161-169.

Journal article

Surface microrelief transformation induced by laser during thin Al film growth on (001)GaAs via the CBE method

Lioubtchenko, D. V., Briantseva, T. A., Markov, I. A., & Bullough, T. J. (2007). Surface microrelief transformation induced by laser during thin Al film growth on (001)GaAs via the CBE method. Diffusion and Defect Data. Pt A Defect and Diffusion Forum, 261-26, 25-30.

Journal article

2006

Interference effects in low coherence interferometry and optical coherence tomography

Russell, C. D., Bullough, T. J., & Sudworth, C. D. (2006). Interference effects in low coherence interferometry and optical coherence tomography. Optics Communications, 260(1), 355-362. doi:10.1016/j.optcom.2005.10.045

DOI
10.1016/j.optcom.2005.10.045
Journal article

Mapping the effective mass of electrons in III-V semiconductor quantum confined structures

Gass, M. H., Papworth, A. J., Beanland, R., Bullough, T. J., & Chalker, P. R. (2006). Mapping the effective mass of electrons in III-V semiconductor quantum confined structures. PHYSICAL REVIEW B, 73(3). doi:10.1103/PhysRevB.73.035312

DOI
10.1103/PhysRevB.73.035312
Journal article

2005

Signal processing techniques for OCT images of human tissue

Russell, C. D., Sudworth, C. D., Bullough, T. J., Krasner, N., Haqqani, M., Deakin, A., & Jones, G. R. (2005). Signal processing techniques for OCT images of human tissue. Progress in Biomedical Optics and Imaging - Proceedings of SPIE, Optical Coherence Tomography and Coherence Techniques II, 5861, 1-6.

Journal article

2004

Elemental mapping using the Ga 3d and In 4d transitions in the ε<sub>2</sub> absorption spectra derived from EELS

Gass, M. H., Papworth, A. J., Bullough, T. J., & Chalker, P. R. (2004). Elemental mapping using the Ga 3d and In 4d transitions in the ε<sub>2</sub> absorption spectra derived from EELS. ULTRAMICROSCOPY, 101(2-4), 257-264. doi:10.1016/j.ultramic.2004.06.007

DOI
10.1016/j.ultramic.2004.06.007
Journal article

Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/GaAs QWs: blue shift versus red shift

Balkan, N., Mazzucato, S., Erol, A., Hepburn, C. J., Potter, R. J., Boland-Thoms, A., . . . Bullough, T. J. (2004). Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/GaAs QWs: blue shift versus red shift. In IEE PROCEEDINGS-OPTOELECTRONICS Vol. 151 (pp. 284-289). doi:10.1049/ip-opt:20040935

DOI
10.1049/ip-opt:20040935
Conference Paper

The microstructural influence of nitrogen incorporation in dilute nitride semiconductors

Chalker, P. R., Bullough, T. J., Gass, M., Thomas, S., & Joyce, T. B. (2004). The microstructural influence of nitrogen incorporation in dilute nitride semiconductors. JOURNAL OF PHYSICS-CONDENSED MATTER, 16(31), S3161-S3170. doi:10.1088/0953-8984/16/31/012

DOI
10.1088/0953-8984/16/31/012
Journal article

Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy

Gass, M. H., Papworth, A. J., Joyce, T. B., Bullough, T. J., & Chalker, P. R. (2004). Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy. APPLIED PHYSICS LETTERS, 84(9), 1453-1455. doi:10.1063/1.1650906

DOI
10.1063/1.1650906
Journal article

Application of chromatic analysis for resolution improvement in optical coherence tomography (OCT)

Russell, C. D., Bullough, T. J., Jones, G. R., Krasner, N., & Bamford, K. J. (2004). Application of chromatic analysis for resolution improvement in optical coherence tomography (OCT). Proc. SPIE, 5486, 123-128.

Journal article

Supporting Problem Based Learning through Interactive Computer Based Learning Software and a Virtual Learning Environment

Anderson, C. M., Bullough, T. J., & Green, A. M. (2004). Supporting Problem Based Learning through Interactive Computer Based Learning Software and a Virtual Learning Environment. Proceedings of the International Conference on Innovation, Good Practice and Research in Engineering Education 2004, 1, 58-63.

Journal article

2003

S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides

Mazzucato, S., Potter, R. J., Erol, A., Balkan, N., Chalker, P. R., Joyce, T. B., . . . Fontaine, C. (2003). S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17(1-4), 242-244. doi:10.1016/S1386-9477(02)00783-X

DOI
10.1016/S1386-9477(02)00783-X
Journal article

Effect of increased nitrogen incorporation on the growth of GaInNAs/GaAs

Bullough, T. J., Davies, S., Thomas, S., Joyce, T. B., & Chalker, P. R. (2003). Effect of increased nitrogen incorporation on the growth of GaInNAs/GaAs. SOLID-STATE ELECTRONICS, 47(3), 407-412. doi:10.1016/S0038-1101(02)00380-5

DOI
10.1016/S0038-1101(02)00380-5
Journal article

Medium energy ion scattering studies of as-grown and annealed GaInNAs/GaAs quantum well

White, S. L., Thomas, S., Joyce, T. B., Bullough, T. J., Chalker, P. R., Noakes, T. C. Q., . . . Balkan, N. (2003). Medium energy ion scattering studies of as-grown and annealed GaInNAs/GaAs quantum well. SOLID-STATE ELECTRONICS, 47(3), 425-429. doi:10.1016/S0038-1101(02)00383-0

DOI
10.1016/S0038-1101(02)00383-0
Journal article

Optical properties of GaInNAs/GaAs quantum wells

Mazzucato, S., Erol, A., Potter, R. J., Balkan, N., Chalker, P. R., Thomas, S., . . . Bullough, T. J. (2003). Optical properties of GaInNAs/GaAs quantum wells. SOLID-STATE ELECTRONICS, 47(3), 483-487. doi:10.1016/S0038-1101(02)00394-5

DOI
10.1016/S0038-1101(02)00394-5
Journal article

2002

Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit

Thomas, S., White, S., Chalker, P. R., Bullough, T. J., & Joyce, T. B. (2002). Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit. J. Mater. Sci.-Mater. In Electronics, 13(9)(9), 525-529.

Journal article

2001

Compositional variation in as-grown GaInNAs/GaAs quantum well structures

Chalker, P. R., Davock, H., Thomas, S., Joyce, T. B., Bullough, T. J., Potter, R. J., & Balkan, N. (2001). Compositional variation in as-grown GaInNAs/GaAs quantum well structures. JOURNAL OF CRYSTAL GROWTH, 233(1-2), 1-4. doi:10.1016/S0022-0248(01)01535-4

DOI
10.1016/S0022-0248(01)01535-4
Journal article

Optical characterization of GaInNAs

Potter, R. J., Mazzucato, S., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2001). Optical characterization of GaInNAs. In PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IX Vol. 4283 (pp. 638-644). doi:10.1117/12.432617

DOI
10.1117/12.432617
Conference Paper

The effect of In/N ratio on the optical quality and lasing threshold in Ga<sub>x</sub>In<sub>1-x</sub>As<sub>1-y</sub>N<sub>y</sub>/GaAs laser structures

Potter, R., Mazzucato, S., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2001). The effect of In/N ratio on the optical quality and lasing threshold in Ga<sub>x</sub>In<sub>1-x</sub>As<sub>1-y</sub>N<sub>y</sub>/GaAs laser structures. SUPERLATTICES AND MICROSTRUCTURES, 29(2), 169-186. doi:10.1006/spmi.2000.0967

DOI
10.1006/spmi.2000.0967
Journal article

2000

Photoluminescence in Ga<sub>0.85</sub>In<sub>0.15</sub>As<sub>0.99</sub>N<sub>0.01</sub>/GaAs single quantum wells:: Effect of low temperature heat treatment in N<sub>2</sub>

Potter, R. J., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2000). Photoluminescence in Ga<sub>0.85</sub>In<sub>0.15</sub>As<sub>0.99</sub>N<sub>0.01</sub>/GaAs single quantum wells:: Effect of low temperature heat treatment in N<sub>2</sub>. PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VIII, PTS 1 AND 2, 3944, 900-909. doi:10.1117/12.391403

DOI
10.1117/12.391403
Journal article

1999

Incorporation of Ga metalorganic precursors during transients at the start of GaAs growth in CBE

Hill, D., Farrell, T., & Bullough, T. J. (1999). Incorporation of Ga metalorganic precursors during transients at the start of GaAs growth in CBE. Thin Solid Films, 343-344, 554-557. doi:10.1016/s0040-6090(98)01684-8

DOI
10.1016/s0040-6090(98)01684-8
Journal article

Process-induced modification to the surface of crystalline GaAs measured by photometry

Briantseva, T. A., Lebedeva, Z. M., Markov, I. A., Bullough, T. J., & Lioubtchenko, D. V. (1999). Process-induced modification to the surface of crystalline GaAs measured by photometry. Applied Surface Science, 143(1-4), 223-228. doi:10.1016/s0169-4332(98)00893-9

DOI
10.1016/s0169-4332(98)00893-9
Journal article

SAW diagnostics of GaAs surface structure

Briantseva, T. A., Bullough, T. J., Lioubtchenko, D. V., Markov, I. A., & Tolmachev, E. M. (1999). SAW diagnostics of GaAs surface structure. Physica B: Condensed Matter, 263-264, 84-86. doi:10.1016/s0921-4526(98)01199-5

DOI
10.1016/s0921-4526(98)01199-5
Journal article

Comparison of in situ optical reflectance and post-growth characterisation for quantitative composition and thickness determination of AlxGa1-xAs

Jothilingam, R., Farrell, T., Joyce, T. B., Bullough, T. J., & Goodhew, P. J. (1999). Comparison of in situ optical reflectance and post-growth characterisation for quantitative composition and thickness determination of AlxGa1-xAs. Vacuum, 53(1-2), 7-10. doi:10.1016/s0042-207x(98)00411-4

DOI
10.1016/s0042-207x(98)00411-4
Journal article

1998

A comparison of the transitory periods in GaAs and AlGaAs CBE growth

Hill, D., Farrell, T., Joyce, T. B., & Bullough, T. J. (1998). A comparison of the transitory periods in GaAs and AlGaAs CBE growth. Journal of Crystal Growth, 188(1-4), 21-25. doi:10.1016/s0022-0248(98)00062-1

DOI
10.1016/s0022-0248(98)00062-1
Journal article

1997

The suppression of misfit dislocation introduction in heavily carbon doped GaAs

Westwater, S. P., Bullough, T. J., Joyce, T. B., Davidson, B. R., & Hart, L. (1997). The suppression of misfit dislocation introduction in heavily carbon doped GaAs. Applied Physics Letters, 70(1), 60-62. doi:10.1063/1.119306

DOI
10.1063/1.119306
Journal article

Carbon delta doping in chemical beam epitaxy using CBr4

Joyce, T. B., Bullough, T. J., Farrell, T., Davidson, B. R., Sykes, D. E., & Chew, A. (1997). Carbon delta doping in chemical beam epitaxy using CBr4. Journal of Crystal Growth, 175-176, 377-382. doi:10.1016/s0022-0248(96)00957-8

DOI
10.1016/s0022-0248(96)00957-8
Journal article

Di-Carbon Defects in Annealed Highly Carbon Doped GaAs

Wagner, J., Newman, R. C., Davidson, B. R., Westwater, S. P., Bullough, T. J., Joyce, T. B., . . . Öberg, S. (n.d.). Di-Carbon Defects in Annealed Highly Carbon Doped GaAs. Physical Review Letters, 78(1), 74-77. doi:10.1103/physrevlett.78.74

DOI
10.1103/physrevlett.78.74
Journal article

Sputtering and the formation of nanometre voids and holes in aluminium in a scanning transmission electron microscope

Bullough, T. J. (1997). Sputtering and the formation of nanometre voids and holes in aluminium in a scanning transmission electron microscope. Philosophical Magazine A, 75(1), 69-85. doi:10.1080/01418619708210283

DOI
10.1080/01418619708210283
Journal article

The microstructure and thermal stability of CBE grown heavily carbon doped GaAs

Westwater, S. P., & Bullough, T. J. (1997). The microstructure and thermal stability of CBE grown heavily carbon doped GaAs. Journal of Crystal Growth, 170(1-4), 752-756. doi:10.1016/s0022-0248(96)00510-6

DOI
10.1016/s0022-0248(96)00510-6
Journal article

Transient surface states during the CBE growth of GaAs

Farrell, T., Hill, D., Joyce, T. B., Bullough, T. J., & Weightman, P. (1997). Transient surface states during the CBE growth of GaAs. JOURNAL OF CRYSTAL GROWTH, 175, 1217-1222. doi:10.1016/S0022-0248(96)00962-1

DOI
10.1016/S0022-0248(96)00962-1
Journal article

1996

The bonding of C-As acceptors in InxGa1-xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon

Ashwin, M. J., Pritchard, R. E., Newman, R. C., Joyce, T. B., Bullough, T. J., Wagner, J., . . . Oberg, S. (1996). The bonding of C-As acceptors in InxGa1-xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon. JOURNAL OF APPLIED PHYSICS, 80(12), 6754-6760. doi:10.1063/1.363803

DOI
10.1063/1.363803
Journal article

A calibration of the H-C<inf>As</inf> stretch mode in GaAs

Davidson, B. R., Newman, R. C., Joyce, T. B., & Bullough, T. J. (1996). A calibration of the H-C<inf>As</inf> stretch mode in GaAs. Semiconductor Science and Technology, 11(3), 455-457.

Journal article

Carbon delta-doping GaAs superlattices

Davidson, B. R., Hart, L., Newman, R. C., Joyce, T. B., Bullough, T. J., & Button, C. C. (1996). Carbon delta-doping GaAs superlattices. J. Mat. Sci.: Materials in Electronics, 7(5), 355-360.

Journal article

Carbon doping and delta-doping in GaAs, AlAs and AlGaAs

Davidson, B. R., Hart, L., Newman, R. C., Button, C. C., Joyce, T. B., & Bullough, T. J. (1996). Carbon doping and delta-doping in GaAs, AlAs and AlGaAs. Elecrochemical Society Proceedings, 96-2, 73-84.

Journal article

Characterization of carbon delta-doping GaAs superlattices grown by chemical beam epitaxy using CBr4

Davidson, B. R., Hart, L., Newman, R. C., Joyce, T. B., & Bullough, T. J. (1996). Characterization of carbon delta-doping GaAs superlattices grown by chemical beam epitaxy using CBr4. Journal of Crystal Growth, 164(1-4), 383-388. doi:10.1016/0022-0248(96)00034-6

DOI
10.1016/0022-0248(96)00034-6
Journal article

Growth mechanisms and morphology of Ar+ laser assisted CBE of GaAs

Boyd, A. R., Bullough, T. J., Farrell, T., & Joyce, T. B. (1996). Growth mechanisms and morphology of Ar+ laser assisted CBE of GaAs. Journal of Crystal Growth, 164(1-4), 71-76. doi:10.1016/0022-0248(96)00007-3

DOI
10.1016/0022-0248(96)00007-3
Journal article

1995

Raman spectroscopic study of the H-C<sub>As</sub>complex in epitaxial AlAs

Wagner, J., Pritchard, R. E., Davidson, B. R., Newman, R. C., Bullough, T. J., Joyce, T. B., . . . Roberts, J. S. (1995). Raman spectroscopic study of the H-C<sub>As</sub>complex in epitaxial AlAs. Semiconductor Science and Technology, 10(5), 639-644. doi:10.1088/0268-1242/10/5/012

DOI
10.1088/0268-1242/10/5/012
Journal article

Dynamics of the H-CAs complex in GaAs determined from Raman measurements.

Wagner, J., Bachem, K. H., Davidson, B. R., Newman, R. C., Bullough, T. J., & Joyce, T. B. (1995). Dynamics of the H-CAs complex in GaAs determined from Raman measurements.. Physical review. B, Condensed matter, 51(7), 4150-4158. doi:10.1103/physrevb.51.4150

DOI
10.1103/physrevb.51.4150
Journal article

In-situ monitoring of carbon doped GaAs and of periodic carbon doped structures grown by chemical beam epitaxy

Joyce, T. B., Bullough, T. J., & Westwater, S. (1995). In-situ monitoring of carbon doped GaAs and of periodic carbon doped structures grown by chemical beam epitaxy. Journal of Crystal Growth, 146(1-4), 394-398. doi:10.1016/0022-0248(94)00493-5

DOI
10.1016/0022-0248(94)00493-5
Journal article

The growth and relaxation of heavily carbon doped GaAs grown by chemical beam epitaxy

Westwater, S. P., & Bullough, T. J. (1995). The growth and relaxation of heavily carbon doped GaAs grown by chemical beam epitaxy. Inst. Phys. Conf. Ser., 147, 401-404.

Journal article

The use of diethylsulphide for the doping of AlGaAs grown by CBE

Pfeffer, T., Bullough, T. J., Joyce, T. B., & Jones, A. C. (1995). The use of diethylsulphide for the doping of AlGaAs grown by CBE. J Cryst Growth, 146(1-4), 399-403.

Journal article

The use of diethylsulphide for the doping of GaAs, AlGaAs and InGaAs grown by chemical beam epitaxy

Joyce, T. B., Pfeffer, T. L., Bullough, T. J., Petkos, G., Goodhew, P. J., & Jones, A. C. (1995). The use of diethylsulphide for the doping of GaAs, AlGaAs and InGaAs grown by chemical beam epitaxy. Journal of Crystal Growth, 150, 644-648. doi:10.1016/0022-0248(95)80288-n

DOI
10.1016/0022-0248(95)80288-n
Journal article

1994

Optical monitoring of the growth of heavily doped GaAs by chemical beam epitaxy and of the <i>in</i> <i>situ</i> etching of GaAs using CBr4

Joyce, T. B., Bullough, T. J., & Farrell, T. (1994). Optical monitoring of the growth of heavily doped GaAs by chemical beam epitaxy and of the <i>in</i> <i>situ</i> etching of GaAs using CBr4. Applied Physics Letters, 65(17), 2193-2195. doi:10.1063/1.112759

DOI
10.1063/1.112759
Journal article

Hydrogen passivated carbon acceptors in GaAs and AlAs: No evidence for carbon donors

Davidson, B. R., Newman, R. C., Pritchard, R. E., Bullough, T. J., Joyce, T. B., Jones, R., & Oberg, S. (1994). Hydrogen passivated carbon acceptors in GaAs and AlAs: No evidence for carbon donors. Materials Research Society Symposium Proceedings, 325, 241-246.

Journal article

Metalorganic sulphur sources for the doping of GaAs grown by chemical beam epitaxy

Joyce, T. B., Pfeffer, T., Bullough, T. J., & Jones, A. C. (1994). Metalorganic sulphur sources for the doping of GaAs grown by chemical beam epitaxy. Journal of Crystal Growth, 135(1-2), 31-35. doi:10.1016/0022-0248(94)90722-6

DOI
10.1016/0022-0248(94)90722-6
Journal article

The structure and vibrational modes of H-CAs pairs in passivated AlAs grown by metalorganic molecular beam epitaxy

Pritchard, R. E., Davidson, B. R., Newman, R. C., Bullough, T. J., Joyce, T. B., Jones, R., & Oberg, S. (1994). The structure and vibrational modes of H-CAs pairs in passivated AlAs grown by metalorganic molecular beam epitaxy. Semicond Sci Technol, 9(2), 140-149.

Journal article

1993

Dynamics of the H-CAs complex in GaAs.

Davidson, B. R., Newman, R. C., Bullough, T. J., & Joyce, T. B. (1993). Dynamics of the H-CAs complex in GaAs.. Physical review. B, Condensed matter, 48(23), 17106-17113. doi:10.1103/physrevb.48.17106

DOI
10.1103/physrevb.48.17106
Journal article

Hydrogen wag modes and transverse carbon modes of H-C<sub>As</sub>complexes in GaAs doped with<sup>12</sup>C or<sup>13</sup>C

Davidson, B. R., Newman, R. C., Bullough, T. J., & Joyce, T. B. (1993). Hydrogen wag modes and transverse carbon modes of H-C<sub>As</sub>complexes in GaAs doped with<sup>12</sup>C or<sup>13</sup>C. Semiconductor Science and Technology, 8(9), 1783-1785. doi:10.1088/0268-1242/8/9/021

DOI
10.1088/0268-1242/8/9/021
Journal article

Beam equivalent pressure measurements in CBE

Joyce, T. B., & Bullough, T. J. (1993). Beam equivalent pressure measurements in CBE. J Cryst Growth, 127(1-4), 265-268.

Journal article

Growth of high quality GaAs on HF-etched Si(001) by CBE

Xing, Y. R., Jamal, Z., Joyce, T. B. F., Bullough, T. J., & Goodhew, P. J. (1993). Growth of high quality GaAs on HF-etched Si(001) by CBE. Appl Phys Letters, 62(14), 1653-1655.

Journal article

Microstructure of GaAs grown by excimer laser assisted CBE

Farrell, T., Armstrong, J. V., Beanland, R., Bullough, T. J., Joyce, T. B., & Goodhew, P. J. (1993). Microstructure of GaAs grown by excimer laser assisted CBE. Semiconductor Sci. and Technol., 8(6), 1112-1117.

Journal article

Orientation and morphology of Al layers grown on GaAs by CBE

Sun, D., Beanland, R., Joyce, T. B. F., Armstrong, J. V., Bullough, T. J., & Goodhew, P. J. (1993). Orientation and morphology of Al layers grown on GaAs by CBE. J Cryst Growth, 132(3-4), 592-598.

Journal article

Passivated hydrogen-carbon acceptors and the search for carbon donors in highley doped GaAs:C

Ashwin, M. J., Davidson, B. R., Woodhouse, K., Newman, R. C., Bullough, T. J., Joyce, T. B. F., . . . Bradley, R. R. (1993). Passivated hydrogen-carbon acceptors and the search for carbon donors in highley doped GaAs:C. Semiconductor Sci. and Technol., 8(5), 625-629.

Journal article

Surface Morphology of GaAs grown by LACBE

Farrell, T., Armstrong, J. V., Joyce, T. B., Bullough, T. J., Beanland, R., & Goodhew, P. J. (1993). Surface Morphology of GaAs grown by LACBE. J Cryst Growth, 127(1-4), 148-151.

Journal article

The use of a silicon strip doping source in CBE

Joyce, T. B., & Bullough, T. J. (1993). The use of a silicon strip doping source in CBE. J Vac Sci and Technol A, 11(5), 2865-2866.

Journal article

1992

CBE growth of GaAs/GaAs, GaAs/Si and AlGaAs/GaAs using TEG, AsH3 and amine-alane precursors

Joyce, T. B., Bullough, T. J., Kightley, P., Kiely, C. J., Xing, Y. R., & Goodhew, P. J. (1992). CBE growth of GaAs/GaAs, GaAs/Si and AlGaAs/GaAs using TEG, AsH3 and amine-alane precursors. Journal of Crystal Growth, 120(1-4), 206-211. doi:10.1016/0022-0248(92)90392-v

DOI
10.1016/0022-0248(92)90392-v
Journal article

Monitoring real-time CBE growth of GaAs and AlGaAs using dynamic optical reflectivity

Armstrong, J. V., Farrell, T., Joyce, T. B., Kightley, P., Bullough, T. J., & Goodhew, P. J. (1992). Monitoring real-time CBE growth of GaAs and AlGaAs using dynamic optical reflectivity. Journal of Crystal Growth, 120(1-4), 84-87. doi:10.1016/0022-0248(92)90368-s

DOI
10.1016/0022-0248(92)90368-s
Journal article

XeCl excimer laser assisted CBE growth of GaAs

Fareell, T., Armstrong, J. V., Joyce, T. B., Bullough, T. J., Kightley, P., & Goodhew, P. J. (1992). XeCl excimer laser assisted CBE growth of GaAs. Journal of Crystal Growth, 120(1-4), 395-398. doi:10.1016/0022-0248(92)90424-h

DOI
10.1016/0022-0248(92)90424-h
Journal article

High resolution transmission electron microscopy study of a GaAs/Si heterostructure grown by chemical beam epitaxy

Xing, Y. R., Devenish, R. W., Joyce, T. B. F., Kiely, C. J., Bullough, T. J., & Goodhew, P. J. (1992). High resolution transmission electron microscopy study of a GaAs/Si heterostructure grown by chemical beam epitaxy. Applied Physics Letters, 60(5), 616-618. doi:10.1063/1.106571

DOI
10.1063/1.106571
Journal article

Measurement of Replacement Collision Sequences in Metals

Bullough, T. J. (1992). Measurement of Replacement Collision Sequences in Metals. 'Materials Modelling: from theory to technology¿, (Inst. Phys), 111-115.

Journal article

1991

100keV Electron Beam Damage of Metals, Ceramics and Semiconductors - Implications for Microanalysis and Nanolithography

Humphreys, C. J., Bullough, T. J., Devenish, R. W., & Maher, D. M. (1991). 100keV Electron Beam Damage of Metals, Ceramics and Semiconductors - Implications for Microanalysis and Nanolithography. Inst. Phys. Conf. Ser., 119, 319-324.

Journal article

Low-energy heavy-ion irradiations of copper and molybdenum at low temperatures

Bullough, T. J., English, C. A., & Eyre, B. L. (1991). Low-energy heavy-ion irradiations of copper and molybdenum at low temperatures. Proc. R. Soc. Lond. A, 435(1893), 85-107.

Journal article

1990

Nanometre hole formation in MgO using electron beams

Turner, P. S., Bullough, T. J., Devenish, R. W., Maher, D. M., & Humphreys, C. J. (1990). Nanometre hole formation in MgO using electron beams. Philosophical Magazine Letters, 61(4), 181-193. doi:10.1080/09500839008202357

DOI
10.1080/09500839008202357
Journal article

Electron Beam Induced Nanometre Hole Formation and Surface Modification in Al, Si and MgO

Bullough, T. J., Humphreys, C. J., & Devenish, R. W. (1990). Electron Beam Induced Nanometre Hole Formation and Surface Modification in Al, Si and MgO. Mat. Res. Soc. Symp. Proc., 157, 323-328.

Journal article

Electron beam nano-etching in oxides, fluorides, metals and semiconductors

Humphreys, C. J., Bullough, T. J., Devenish, R. W., Maher, D. M., & Turner, P. S. (1990). Electron beam nano-etching in oxides, fluorides, metals and semiconductors. Fundamental Electron and Ion Beam Interactions with Solids for Microscopy, Microanalysis and Microlithography, Scanning Microscopy Supplement, 4, 185-192.

Journal article

The Interaction of Electron Beams with Solids - Some New Effects

Humphreys, C. J., Bullough, T. J., Devenish, R. W., Maher, D. M., & Turner, P. S. (1990). The Interaction of Electron Beams with Solids - Some New Effects. Proc. 12th International Congress for Electron Microscopy, 788-789.

Journal article

1989

100keV electron-beam modification of aluminium and silicon in the STEM

Bullough, T. J., Devenish, R. W., & Humphreys, C. J. (1989). 100keV electron-beam modification of aluminium and silicon in the STEM. Inst. Phys. Conf. Ser., 98, 267-270.

Journal article

Electron-beam machining of MgO and ZnO in the STEM

Devenish, R. W., Bullough, T. J., Turner, P. S., & Humphreys, C. J. (1989). Electron-beam machining of MgO and ZnO in the STEM. Inst. Phys. Conf. Series, 98, 215-218.

Journal article

1987

Low-energy self-ion irradiations of copper and molybdenum at 4.2K

Bullough, T. J., English, C. A., & Eyre, B. L. (1987). Low-energy self-ion irradiations of copper and molybdenum at 4.2K. Materials Science Forum, 15-18, 1069-1074.

Journal article

1983

A simulation study of the initial phase of He precipitation in metals

Caspers, L. M., van Veen, A., & Bullough, T. J. (1983). A simulation study of the initial phase of He precipitation in metals. Radiation Effects, 78(1-4), 67-70.

Journal article

1981

An atomistic calculation of extended planar defects in ionic crystals Application to stacking faults in the alkali halides

Tasker, P. W., & Bullough, T. J. (1981). An atomistic calculation of extended planar defects in ionic crystals Application to stacking faults in the alkali halides. Philosophical Magazine A, 43(2), 313-324. doi:10.1080/01418618108239411

DOI
10.1080/01418618108239411
Journal article