Publications
2018
Composition-variations and phase-segregation in InGaAsN grown by CBE
Thomas, S., Bullough, T. J., Joyce, T. B., Zheng, J. G., & Chalker, P. R. (2001). Composition-variations and phase-segregation in InGaAsN grown by CBE. MICROSCOPY OF SEMICONDUCTING MATERIALS 2001, (169), 123-126. Retrieved from https://www.webofscience.com/
Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells
Gass, M. H., Bullough, T. J., Papworth, A., Thomas, S., Joyce, T. B., Chalker, P. R., . . . Balkan, N. (2003). Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells. MICROSCOPY OF SEMICONDUCTING MATERIALS 2003, (180), 225-228. Retrieved from https://www.webofscience.com/
2011
Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN-AlGaN axial heterostructure nanowires
Lari, L., Walther, T., Gass, M. H., Geelhaar, L., Cheze, C., Riechert, H., . . . Chalker, P. R. (2011). Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN-AlGaN axial heterostructure nanowires. JOURNAL OF CRYSTAL GROWTH, 327(1), 27-34. doi:10.1016/j.jcrysgro.2011.06.004
2010
'GaN, AlGaN, HfO2 based radial heterostructure nanowires'
Lari, L., Walther, T., Black, K., Murray, R. T., Bullough, T. J., Chalker, P. R., . . . Riechert, H. (2010). 'GaN, AlGaN, HfO2 based radial heterostructure nanowires'. Journal of Physics: Conference Series, 209(1).
2009
Materials thoughts - Student opinions of higher education in materials science
Bullough, T. J., & Taktak, D. (2009). Materials thoughts - Student opinions of higher education in materials science. Materials World Magazine, ?.
2008
A national subject profile for materials: Views of graduates and materials teaching staff
Bullough, T., Goodhew, P., Taktak, D., & Mannis, A. (2008). A national subject profile for materials: Views of graduates and materials teaching staff. Engineering Education, 3(2), 2-10. doi:10.11120/ened.2008.03020002
Defect characterization and analysis of III-V nanowires grown by Ni-promoted MBE
Lari, L., Murray, R. T., Gass, M. H., Bullough, T. J., Chalker, P. R., Kioseoglou, J., . . . Riechert, H. (2008). Defect characterization and analysis of III-V nanowires grown by Ni-promoted MBE. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 205(11), 2589-2592. doi:10.1002/pssa.200780132
Thermal stability of C-doped GaAs/AlAs DBR structures
Liang, M. S., Bullough, T. J., & Joyce, T. B. (2008). Thermal stability of C-doped GaAs/AlAs DBR structures. Solid-State Electronics, 52(8), 1256-1259. doi:10.1016/j.sse.2008.06.015
Nanoscale compositional analysis of Ni-based seed crystallites associated with GaN nanowire growth
Lari, L., Murray, R. T., Bullough, T. J., Chalker, P. R., Gass, M., Cheze, C., . . . Riechert, H. (2008). Nanoscale compositional analysis of Ni-based seed crystallites associated with GaN nanowire growth. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 40(7), 2457-2461. doi:10.1016/j.physe.2007.10.003
Do materials science and engineering students learn the workplace skills, attitudes and abilities that they need as graduates?
Taktak, D., Bullough, T. J., & Goodhew, P. J. (2008). Do materials science and engineering students learn the workplace skills, attitudes and abilities that they need as graduates?. In EE2008. Loughborough, UK: Higher Education Academy Engineering Subject Centre and the UK Centre for Materials Education.
Electron Microscopy Analysis of AlGaN/GaN Nanowires Grown by Catalyst-Assisted Molecular Beam Epitaxy
Lari, L., Murray, R. T., Gass, M., Bullough, T. J., Chalker, P. R., Cheze, C., . . . Riechert, H. (2008). Electron Microscopy Analysis of AlGaN/GaN Nanowires Grown by Catalyst-Assisted Molecular Beam Epitaxy. MICROSCOPY OF SEMICONDUCTING MATERIALS 2007, 120, 221-+. Retrieved from https://www.webofscience.com/
Materials in demand?
Bullough, T. J. (2008). Materials in demand?. Materials World Magazine, ?. Retrieved from http://www.iom3.org/news/materials-demand
Materials in progress in higher education
Bullough, T. J., & Taktak, D. (2008). Materials in progress in higher education. Materials World Magazine, ?.
National Subject Profile for Higher Education Programmes in: Materials
UKCME., Bullough, T. J., & Taktak, D. (2008). National Subject Profile for Higher Education Programmes in: Materials. York: Higher Education Academy. Retrieved from http://www.materials.ac.uk/subject-profile/NSP-report.pdf
2007
Active Learning in Materials Science and Engineering
Goodhew, P. J., & Bullough, T. J. (2007). Active Learning in Materials Science and Engineering. Journal of Materials Education, 28(3-6), 161-169.
Surface microrelief transformation induced by laser during thin Al film growth on (001)GaAs via the CBE method
Lioubtchenko, D. V., Briantseva, T. A., Markov, I. A., & Bullough, T. J. (2007). Surface microrelief transformation induced by laser during thin Al film growth on (001)GaAs via the CBE method. Diffusion and Defect Data. Pt A Defect and Diffusion Forum, 261-26, 25-30.
2006
Interference effects in low coherence interferometry and optical coherence tomography
Russell, C. D., Bullough, T. J., & Sudworth, C. D. (2006). Interference effects in low coherence interferometry and optical coherence tomography. Optics Communications, 260(1), 355-362. doi:10.1016/j.optcom.2005.10.045
Mapping the effective mass of electrons in III-V semiconductor quantum confined structures
Gass, M. H., Papworth, A. J., Beanland, R., Bullough, T. J., & Chalker, P. R. (2006). Mapping the effective mass of electrons in III-V semiconductor quantum confined structures. PHYSICAL REVIEW B, 73(3). doi:10.1103/PhysRevB.73.035312
2005
Signal processing techniques for OCT images of human tissue
Russell, C. D., Sudworth, C. D., Bullough, T. J., Krasner, N., Haqqani, M., Deakin, A., & Jones, G. R. (2005). Signal processing techniques for OCT images of human tissue. Progress in Biomedical Optics and Imaging - Proceedings of SPIE, Optical Coherence Tomography and Coherence Techniques II, 5861, 1-6.
2004
Elemental mapping using the Ga 3d and In 4d transitions in the ε<sub>2</sub> absorption spectra derived from EELS
Gass, M. H., Papworth, A. J., Bullough, T. J., & Chalker, P. R. (2004). Elemental mapping using the Ga 3d and In 4d transitions in the ε<sub>2</sub> absorption spectra derived from EELS. ULTRAMICROSCOPY, 101(2-4), 257-264. doi:10.1016/j.ultramic.2004.06.007
Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/GaAs QWs: blue shift versus red shift
Balkan, N., Mazzucato, S., Erol, A., Hepburn, C. J., Potter, R. J., Boland-Thoms, A., . . . Bullough, T. J. (2004). Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/GaAs QWs: blue shift versus red shift. In IEE PROCEEDINGS-OPTOELECTRONICS Vol. 151 (pp. 284-289). doi:10.1049/ip-opt:20040935
The microstructural influence of nitrogen incorporation in dilute nitride semiconductors
Chalker, P. R., Bullough, T. J., Gass, M., Thomas, S., & Joyce, T. B. (2004). The microstructural influence of nitrogen incorporation in dilute nitride semiconductors. JOURNAL OF PHYSICS-CONDENSED MATTER, 16(31), S3161-S3170. doi:10.1088/0953-8984/16/31/012
Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy
Gass, M. H., Papworth, A. J., Joyce, T. B., Bullough, T. J., & Chalker, P. R. (2004). Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy. APPLIED PHYSICS LETTERS, 84(9), 1453-1455. doi:10.1063/1.1650906
Application of chromatic analysis for resolution improvement in optical coherence tomography (OCT)
Russell, C. D., Bullough, T. J., Jones, G. R., Krasner, N., & Bamford, K. J. (2004). Application of chromatic analysis for resolution improvement in optical coherence tomography (OCT). Proc. SPIE, 5486, 123-128.
Supporting Problem Based Learning through Interactive Computer Based Learning Software and a Virtual Learning Environment
Anderson, C. M., Bullough, T. J., & Green, A. M. (2004). Supporting Problem Based Learning through Interactive Computer Based Learning Software and a Virtual Learning Environment. Proceedings of the International Conference on Innovation, Good Practice and Research in Engineering Education 2004, 1, 58-63.
2003
S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides
Mazzucato, S., Potter, R. J., Erol, A., Balkan, N., Chalker, P. R., Joyce, T. B., . . . Fontaine, C. (2003). S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17(1-4), 242-244. doi:10.1016/S1386-9477(02)00783-X
Effect of increased nitrogen incorporation on the growth of GaInNAs/GaAs
Bullough, T. J., Davies, S., Thomas, S., Joyce, T. B., & Chalker, P. R. (2003). Effect of increased nitrogen incorporation on the growth of GaInNAs/GaAs. SOLID-STATE ELECTRONICS, 47(3), 407-412. doi:10.1016/S0038-1101(02)00380-5
Medium energy ion scattering studies of as-grown and annealed GaInNAs/GaAs quantum well
White, S. L., Thomas, S., Joyce, T. B., Bullough, T. J., Chalker, P. R., Noakes, T. C. Q., . . . Balkan, N. (2003). Medium energy ion scattering studies of as-grown and annealed GaInNAs/GaAs quantum well. SOLID-STATE ELECTRONICS, 47(3), 425-429. doi:10.1016/S0038-1101(02)00383-0
Optical properties of GaInNAs/GaAs quantum wells
Mazzucato, S., Erol, A., Potter, R. J., Balkan, N., Chalker, P. R., Thomas, S., . . . Bullough, T. J. (2003). Optical properties of GaInNAs/GaAs quantum wells. SOLID-STATE ELECTRONICS, 47(3), 483-487. doi:10.1016/S0038-1101(02)00394-5
2002
Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit
Thomas, S., White, S., Chalker, P. R., Bullough, T. J., & Joyce, T. B. (2002). Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit. J. Mater. Sci.-Mater. In Electronics, 13(9)(9), 525-529.
2001
Compositional variation in as-grown GaInNAs/GaAs quantum well structures
Chalker, P. R., Davock, H., Thomas, S., Joyce, T. B., Bullough, T. J., Potter, R. J., & Balkan, N. (2001). Compositional variation in as-grown GaInNAs/GaAs quantum well structures. JOURNAL OF CRYSTAL GROWTH, 233(1-2), 1-4. doi:10.1016/S0022-0248(01)01535-4
Optical characterization of GaInNAs
Potter, R. J., Mazzucato, S., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2001). Optical characterization of GaInNAs. In PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IX Vol. 4283 (pp. 638-644). doi:10.1117/12.432617
The effect of In/N ratio on the optical quality and lasing threshold in Ga<sub>x</sub>In<sub>1-x</sub>As<sub>1-y</sub>N<sub>y</sub>/GaAs laser structures
Potter, R., Mazzucato, S., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2001). The effect of In/N ratio on the optical quality and lasing threshold in Ga<sub>x</sub>In<sub>1-x</sub>As<sub>1-y</sub>N<sub>y</sub>/GaAs laser structures. SUPERLATTICES AND MICROSTRUCTURES, 29(2), 169-186. doi:10.1006/spmi.2000.0967
2000
Photoluminescence in Ga<sub>0.85</sub>In<sub>0.15</sub>As<sub>0.99</sub>N<sub>0.01</sub>/GaAs single quantum wells:: Effect of low temperature heat treatment in N<sub>2</sub>
Potter, R. J., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2000). Photoluminescence in Ga<sub>0.85</sub>In<sub>0.15</sub>As<sub>0.99</sub>N<sub>0.01</sub>/GaAs single quantum wells:: Effect of low temperature heat treatment in N<sub>2</sub>. PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VIII, PTS 1 AND 2, 3944, 900-909. doi:10.1117/12.391403
1999
Incorporation of Ga metalorganic precursors during transients at the start of GaAs growth in CBE
Hill, D., Farrell, T., & Bullough, T. J. (1999). Incorporation of Ga metalorganic precursors during transients at the start of GaAs growth in CBE. Thin Solid Films, 343-344, 554-557. doi:10.1016/s0040-6090(98)01684-8
Process-induced modification to the surface of crystalline GaAs measured by photometry
Briantseva, T. A., Lebedeva, Z. M., Markov, I. A., Bullough, T. J., & Lioubtchenko, D. V. (1999). Process-induced modification to the surface of crystalline GaAs measured by photometry. Applied Surface Science, 143(1-4), 223-228. doi:10.1016/s0169-4332(98)00893-9
SAW diagnostics of GaAs surface structure
Briantseva, T. A., Bullough, T. J., Lioubtchenko, D. V., Markov, I. A., & Tolmachev, E. M. (1999). SAW diagnostics of GaAs surface structure. Physica B: Condensed Matter, 263-264, 84-86. doi:10.1016/s0921-4526(98)01199-5
Comparison of in situ optical reflectance and post-growth characterisation for quantitative composition and thickness determination of AlxGa1-xAs
Jothilingam, R., Farrell, T., Joyce, T. B., Bullough, T. J., & Goodhew, P. J. (1999). Comparison of in situ optical reflectance and post-growth characterisation for quantitative composition and thickness determination of AlxGa1-xAs. Vacuum, 53(1-2), 7-10. doi:10.1016/s0042-207x(98)00411-4
1998
A comparison of the transitory periods in GaAs and AlGaAs CBE growth
Hill, D., Farrell, T., Joyce, T. B., & Bullough, T. J. (1998). A comparison of the transitory periods in GaAs and AlGaAs CBE growth. Journal of Crystal Growth, 188(1-4), 21-25. doi:10.1016/s0022-0248(98)00062-1
1997
The suppression of misfit dislocation introduction in heavily carbon doped GaAs
Westwater, S. P., Bullough, T. J., Joyce, T. B., Davidson, B. R., & Hart, L. (1997). The suppression of misfit dislocation introduction in heavily carbon doped GaAs. Applied Physics Letters, 70(1), 60-62. doi:10.1063/1.119306
Carbon delta doping in chemical beam epitaxy using CBr4
Joyce, T. B., Bullough, T. J., Farrell, T., Davidson, B. R., Sykes, D. E., & Chew, A. (1997). Carbon delta doping in chemical beam epitaxy using CBr4. Journal of Crystal Growth, 175-176, 377-382. doi:10.1016/s0022-0248(96)00957-8
Di-Carbon Defects in Annealed Highly Carbon Doped GaAs
Wagner, J., Newman, R. C., Davidson, B. R., Westwater, S. P., Bullough, T. J., Joyce, T. B., . . . Öberg, S. (1997). Di-Carbon Defects in Annealed Highly Carbon Doped GaAs. Physical Review Letters, 78(1), 74-77. doi:10.1103/physrevlett.78.74
Sputtering and the formation of nanometre voids and holes in aluminium in a scanning transmission electron microscope
Bullough, T. J. (1997). Sputtering and the formation of nanometre voids and holes in aluminium in a scanning transmission electron microscope. Philosophical Magazine A, 75(1), 69-85. doi:10.1080/01418619708210283
The microstructure and thermal stability of CBE grown heavily carbon doped GaAs
Westwater, S. P., & Bullough, T. J. (1997). The microstructure and thermal stability of CBE grown heavily carbon doped GaAs. Journal of Crystal Growth, 170(1-4), 752-756. doi:10.1016/s0022-0248(96)00510-6
Transient surface states during the CBE growth of GaAs
Farrell, T., Hill, D., Joyce, T. B., Bullough, T. J., & Weightman, P. (1997). Transient surface states during the CBE growth of GaAs. JOURNAL OF CRYSTAL GROWTH, 175, 1217-1222. doi:10.1016/S0022-0248(96)00962-1
1996
The bonding of C-As acceptors in InxGa1-xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon
Ashwin, M. J., Pritchard, R. E., Newman, R. C., Joyce, T. B., Bullough, T. J., Wagner, J., . . . Oberg, S. (1996). The bonding of C-As acceptors in InxGa1-xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon. JOURNAL OF APPLIED PHYSICS, 80(12), 6754-6760. doi:10.1063/1.363803
A calibration of the H-C<inf>As</inf> stretch mode in GaAs
Davidson, B. R., Newman, R. C., Joyce, T. B., & Bullough, T. J. (1996). A calibration of the H-C<inf>As</inf> stretch mode in GaAs. Semiconductor Science and Technology, 11(3), 455-457.
Carbon delta-doping GaAs superlattices
Davidson, B. R., Hart, L., Newman, R. C., Joyce, T. B., Bullough, T. J., & Button, C. C. (1996). Carbon delta-doping GaAs superlattices. J. Mat. Sci.: Materials in Electronics, 7(5), 355-360.
Carbon doping and delta-doping in GaAs, AlAs and AlGaAs
Davidson, B. R., Hart, L., Newman, R. C., Button, C. C., Joyce, T. B., & Bullough, T. J. (1996). Carbon doping and delta-doping in GaAs, AlAs and AlGaAs. Elecrochemical Society Proceedings, 96-2, 73-84.
Characterization of carbon delta-doping GaAs superlattices grown by chemical beam epitaxy using CBr4
Davidson, B. R., Hart, L., Newman, R. C., Joyce, T. B., & Bullough, T. J. (1996). Characterization of carbon delta-doping GaAs superlattices grown by chemical beam epitaxy using CBr4. Journal of Crystal Growth, 164(1-4), 383-388. doi:10.1016/0022-0248(96)00034-6
Growth mechanisms and morphology of Ar+ laser assisted CBE of GaAs
Boyd, A. R., Bullough, T. J., Farrell, T., & Joyce, T. B. (1996). Growth mechanisms and morphology of Ar+ laser assisted CBE of GaAs. Journal of Crystal Growth, 164(1-4), 71-76. doi:10.1016/0022-0248(96)00007-3
1995
Raman spectroscopic study of the H-C<sub>As</sub>complex in epitaxial AlAs
Wagner, J., Pritchard, R. E., Davidson, B. R., Newman, R. C., Bullough, T. J., Joyce, T. B., . . . Roberts, J. S. (1995). Raman spectroscopic study of the H-C<sub>As</sub>complex in epitaxial AlAs. Semiconductor Science and Technology, 10(5), 639-644. doi:10.1088/0268-1242/10/5/012
Dynamics of the H-CAs complex in GaAs determined from Raman measurements.
Wagner, J., Bachem, K. H., Davidson, B. R., Newman, R. C., Bullough, T. J., & Joyce, T. B. (1995). Dynamics of the H-CAs complex in GaAs determined from Raman measurements.. Physical review. B, Condensed matter, 51(7), 4150-4158. doi:10.1103/physrevb.51.4150
In-situ monitoring of carbon doped GaAs and of periodic carbon doped structures grown by chemical beam epitaxy
Joyce, T. B., Bullough, T. J., & Westwater, S. (1995). In-situ monitoring of carbon doped GaAs and of periodic carbon doped structures grown by chemical beam epitaxy. Journal of Crystal Growth, 146(1-4), 394-398. doi:10.1016/0022-0248(94)00493-5
The growth and relaxation of heavily carbon doped GaAs grown by chemical beam epitaxy
Westwater, S. P., & Bullough, T. J. (1995). The growth and relaxation of heavily carbon doped GaAs grown by chemical beam epitaxy. Inst. Phys. Conf. Ser., 147, 401-404.
The use of diethylsulphide for the doping of AlGaAs grown by CBE
Pfeffer, T., Bullough, T. J., Joyce, T. B., & Jones, A. C. (1995). The use of diethylsulphide for the doping of AlGaAs grown by CBE. J Cryst Growth, 146(1-4), 399-403.
The use of diethylsulphide for the doping of GaAs, AlGaAs and InGaAs grown by chemical beam epitaxy
Joyce, T. B., Pfeffer, T. L., Bullough, T. J., Petkos, G., Goodhew, P. J., & Jones, A. C. (1995). The use of diethylsulphide for the doping of GaAs, AlGaAs and InGaAs grown by chemical beam epitaxy. Journal of Crystal Growth, 150, 644-648. doi:10.1016/0022-0248(95)80288-n
1994
Optical monitoring of the growth of heavily doped GaAs by chemical beam epitaxy and of the <i>in</i> <i>situ</i> etching of GaAs using CBr4
Joyce, T. B., Bullough, T. J., & Farrell, T. (1994). Optical monitoring of the growth of heavily doped GaAs by chemical beam epitaxy and of the <i>in</i> <i>situ</i> etching of GaAs using CBr4. Applied Physics Letters, 65(17), 2193-2195. doi:10.1063/1.112759
Hydrogen passivated carbon acceptors in GaAs and AlAs: No evidence for carbon donors
Davidson, B. R., Newman, R. C., Pritchard, R. E., Bullough, T. J., Joyce, T. B., Jones, R., & Oberg, S. (1994). Hydrogen passivated carbon acceptors in GaAs and AlAs: No evidence for carbon donors. Materials Research Society Symposium Proceedings, 325, 241-246.
Metalorganic sulphur sources for the doping of GaAs grown by chemical beam epitaxy
Joyce, T. B., Pfeffer, T., Bullough, T. J., & Jones, A. C. (1994). Metalorganic sulphur sources for the doping of GaAs grown by chemical beam epitaxy. Journal of Crystal Growth, 135(1-2), 31-35. doi:10.1016/0022-0248(94)90722-6
The structure and vibrational modes of H-CAs pairs in passivated AlAs grown by metalorganic molecular beam epitaxy
Pritchard, R. E., Davidson, B. R., Newman, R. C., Bullough, T. J., Joyce, T. B., Jones, R., & Oberg, S. (1994). The structure and vibrational modes of H-CAs pairs in passivated AlAs grown by metalorganic molecular beam epitaxy. Semicond Sci Technol, 9(2), 140-149.
1993
Dynamics of the H-CAs complex in GaAs.
Davidson, B. R., Newman, R. C., Bullough, T. J., & Joyce, T. B. (1993). Dynamics of the H-CAs complex in GaAs.. Physical review. B, Condensed matter, 48(23), 17106-17113. doi:10.1103/physrevb.48.17106
Hydrogen wag modes and transverse carbon modes of H-C<sub>As</sub>complexes in GaAs doped with<sup>12</sup>C or<sup>13</sup>C
Davidson, B. R., Newman, R. C., Bullough, T. J., & Joyce, T. B. (1993). Hydrogen wag modes and transverse carbon modes of H-C<sub>As</sub>complexes in GaAs doped with<sup>12</sup>C or<sup>13</sup>C. Semiconductor Science and Technology, 8(9), 1783-1785. doi:10.1088/0268-1242/8/9/021
Beam equivalent pressure measurements in CBE
Joyce, T. B., & Bullough, T. J. (1993). Beam equivalent pressure measurements in CBE. J Cryst Growth, 127(1-4), 265-268.
Growth of high quality GaAs on HF-etched Si(001) by CBE
Xing, Y. R., Jamal, Z., Joyce, T. B. F., Bullough, T. J., & Goodhew, P. J. (1993). Growth of high quality GaAs on HF-etched Si(001) by CBE. Appl Phys Letters, 62(14), 1653-1655.
Microstructure of GaAs grown by excimer laser assisted CBE
Farrell, T., Armstrong, J. V., Beanland, R., Bullough, T. J., Joyce, T. B., & Goodhew, P. J. (1993). Microstructure of GaAs grown by excimer laser assisted CBE. Semiconductor Sci. and Technol., 8(6), 1112-1117.
Orientation and morphology of Al layers grown on GaAs by CBE
Sun, D., Beanland, R., Joyce, T. B. F., Armstrong, J. V., Bullough, T. J., & Goodhew, P. J. (1993). Orientation and morphology of Al layers grown on GaAs by CBE. J Cryst Growth, 132(3-4), 592-598.
Passivated hydrogen-carbon acceptors and the search for carbon donors in highley doped GaAs:C
Ashwin, M. J., Davidson, B. R., Woodhouse, K., Newman, R. C., Bullough, T. J., Joyce, T. B. F., . . . Bradley, R. R. (1993). Passivated hydrogen-carbon acceptors and the search for carbon donors in highley doped GaAs:C. Semiconductor Sci. and Technol., 8(5), 625-629.
Surface Morphology of GaAs grown by LACBE
Farrell, T., Armstrong, J. V., Joyce, T. B., Bullough, T. J., Beanland, R., & Goodhew, P. J. (1993). Surface Morphology of GaAs grown by LACBE. J Cryst Growth, 127(1-4), 148-151.
The use of a silicon strip doping source in CBE
Joyce, T. B., & Bullough, T. J. (1993). The use of a silicon strip doping source in CBE. J Vac Sci and Technol A, 11(5), 2865-2866.
1992
CBE growth of GaAs/GaAs, GaAs/Si and AlGaAs/GaAs using TEG, AsH3 and amine-alane precursors
Joyce, T. B., Bullough, T. J., Kightley, P., Kiely, C. J., Xing, Y. R., & Goodhew, P. J. (1992). CBE growth of GaAs/GaAs, GaAs/Si and AlGaAs/GaAs using TEG, AsH3 and amine-alane precursors. Journal of Crystal Growth, 120(1-4), 206-211. doi:10.1016/0022-0248(92)90392-v
Monitoring real-time CBE growth of GaAs and AlGaAs using dynamic optical reflectivity
Armstrong, J. V., Farrell, T., Joyce, T. B., Kightley, P., Bullough, T. J., & Goodhew, P. J. (1992). Monitoring real-time CBE growth of GaAs and AlGaAs using dynamic optical reflectivity. Journal of Crystal Growth, 120(1-4), 84-87. doi:10.1016/0022-0248(92)90368-s
XeCl excimer laser assisted CBE growth of GaAs
Fareell, T., Armstrong, J. V., Joyce, T. B., Bullough, T. J., Kightley, P., & Goodhew, P. J. (1992). XeCl excimer laser assisted CBE growth of GaAs. Journal of Crystal Growth, 120(1-4), 395-398. doi:10.1016/0022-0248(92)90424-h
High resolution transmission electron microscopy study of a GaAs/Si heterostructure grown by chemical beam epitaxy
Xing, Y. R., Devenish, R. W., Joyce, T. B. F., Kiely, C. J., Bullough, T. J., & Goodhew, P. J. (1992). High resolution transmission electron microscopy study of a GaAs/Si heterostructure grown by chemical beam epitaxy. Applied Physics Letters, 60(5), 616-618. doi:10.1063/1.106571
Measurement of Replacement Collision Sequences in Metals
Bullough, T. J. (1992). Measurement of Replacement Collision Sequences in Metals. 'Materials Modelling: from theory to technology¿, (Inst. Phys), 111-115.
1991
100keV Electron Beam Damage of Metals, Ceramics and Semiconductors - Implications for Microanalysis and Nanolithography
Humphreys, C. J., Bullough, T. J., Devenish, R. W., & Maher, D. M. (1991). 100keV Electron Beam Damage of Metals, Ceramics and Semiconductors - Implications for Microanalysis and Nanolithography. Inst. Phys. Conf. Ser., 119, 319-324.
Low-energy heavy-ion irradiations of copper and molybdenum at low temperatures
Bullough, T. J., English, C. A., & Eyre, B. L. (1991). Low-energy heavy-ion irradiations of copper and molybdenum at low temperatures. Proc. R. Soc. Lond. A, 435(1893), 85-107.
1990
Nanometre hole formation in MgO using electron beams
Turner, P. S., Bullough, T. J., Devenish, R. W., Maher, D. M., & Humphreys, C. J. (1990). Nanometre hole formation in MgO using electron beams. Philosophical Magazine Letters, 61(4), 181-193. doi:10.1080/09500839008202357
Electron Beam Induced Nanometre Hole Formation and Surface Modification in Al, Si and MgO
Bullough, T. J., Humphreys, C. J., & Devenish, R. W. (1990). Electron Beam Induced Nanometre Hole Formation and Surface Modification in Al, Si and MgO. Mat. Res. Soc. Symp. Proc., 157, 323-328.
Electron beam nano-etching in oxides, fluorides, metals and semiconductors
Humphreys, C. J., Bullough, T. J., Devenish, R. W., Maher, D. M., & Turner, P. S. (1990). Electron beam nano-etching in oxides, fluorides, metals and semiconductors. Fundamental Electron and Ion Beam Interactions with Solids for Microscopy, Microanalysis and Microlithography, Scanning Microscopy Supplement, 4, 185-192.
The Interaction of Electron Beams with Solids - Some New Effects
Humphreys, C. J., Bullough, T. J., Devenish, R. W., Maher, D. M., & Turner, P. S. (1990). The Interaction of Electron Beams with Solids - Some New Effects. Proc. 12th International Congress for Electron Microscopy, 788-789.
1989
100keV electron-beam modification of aluminium and silicon in the STEM
Bullough, T. J., Devenish, R. W., & Humphreys, C. J. (1989). 100keV electron-beam modification of aluminium and silicon in the STEM. Inst. Phys. Conf. Ser., 98, 267-270.
Electron-beam machining of MgO and ZnO in the STEM
Devenish, R. W., Bullough, T. J., Turner, P. S., & Humphreys, C. J. (1989). Electron-beam machining of MgO and ZnO in the STEM. Inst. Phys. Conf. Series, 98, 215-218.
1987
Low-energy self-ion irradiations of copper and molybdenum at 4.2K
Bullough, T. J., English, C. A., & Eyre, B. L. (1987). Low-energy self-ion irradiations of copper and molybdenum at 4.2K. Materials Science Forum, 15-18, 1069-1074.
1983
A simulation study of the initial phase of He precipitation in metals
Caspers, L. M., van Veen, A., & Bullough, T. J. (1983). A simulation study of the initial phase of He precipitation in metals. Radiation Effects, 78(1-4), 67-70.
1981
An atomistic calculation of extended planar defects in ionic crystals Application to stacking faults in the alkali halides
Tasker, P. W., & Bullough, T. J. (1981). An atomistic calculation of extended planar defects in ionic crystals Application to stacking faults in the alkali halides. Philosophical Magazine A, 43(2), 313-324. doi:10.1080/01418618108239411