Publications
Selected publications
- Band gap temperature-dependence and exciton-like state in copper antimony sulphide, CuSbS2 (Journal article - 2018)
- Band gap temperature-dependence of close-space sublimation grown Sb2Se3 by photo-reflectance (Journal article - 2018)
- Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitride Cu3N (Journal article - 2017)
- Core Levels, Band Alignments, and Valence-Band States in CuSbS<sub>2</sub> for Solar Cell Applications (Journal article - 2017)
2020
Vacancy-Ordered Double Perovskite Cs2TeI6 Thin Films for Optoelectronics
Vazquez-Fernandez, I., Mariotti, S., Hutter, O. S., Birkett, M., Veal, T. D., Hobson, T. D. C., . . . Durose, K. (2020). Vacancy-Ordered Double Perovskite Cs2TeI6 Thin Films for Optoelectronics. Chemistry of Materials. doi:10.1021/acs.chemmater.0c02150
2019
Resonant doping for high mobility transparent conductors: the case of Mo-doped In2O3
Swallow, J. E. N., Williamson, B. A. D., Sathasivam, S., Birkett, M., Featherstone, T. J., Murgatroyd, P. A. E., . . . Veal, T. D. (2020). Resonant doping for high mobility transparent conductors: the case of Mo-doped In2O3. Materials Horizons, 7(1), 236-243. doi:10.1039/c9mh01014a
Band Alignments, Band Gap, Core Levels, and Valence Band States in Cu<sub>3</sub>BiS<sub>3</sub> for Photovoltaics
Whittles, T. J., Veal, T. D., Savory, C. N., Yates, P. J., Murgatroyd, P. A. E., Gibbon, J. T., . . . Dhanak, V. R. (2019). Band Alignments, Band Gap, Core Levels, and Valence Band States in Cu<sub>3</sub>BiS<sub>3</sub> for Photovoltaics. ACS APPLIED MATERIALS & INTERFACES, 11(30), 27033-27047. doi:10.1021/acsami.9b04268
Current enhancement via a TiO2 window layer for CSS Sb2Se3 solar cells: performance limits and high Voc
Phillips, L. J., Savory, C. N., Hutter, O. S., Yates, P. J., Shiel, H., Mariotti, S., . . . Major, J. D. (2019). Current enhancement via a TiO2 window layer for CSS Sb2Se3 solar cells: performance limits and high Voc. IEEE Journal of Photovoltaics, 9(2), 544-551. doi:10.1109/JPHOTOV.2018.2885836
Nitrogen pair-induced temperature insensitivity of the band gap of GaNSb alloys
Linhart, W. M., Rajpalke, M. K., Birkett, M., Walker, D., Ashwin, M. J., & Veal, T. D. (2019). Nitrogen pair-induced temperature insensitivity of the band gap of GaNSb alloys. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 52(4). doi:10.1088/1361-6463/aaeec9
2018
A hard x-ray photoemission study of transparent conducting fluorine-doped tin dioxide
Swallow, J. E. N., Williamson, B. A. D., Birkett, M., Abbott, A., Farnworth, M., Featherstone, T. J., . . . Veal, T. D. (2018). A hard x-ray photoemission study of transparent conducting fluorine-doped tin dioxide. In 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) (pp. 3051-3055). Retrieved from https://www.webofscience.com/
Growth and Characterization of Sb<sub>2</sub>Se<sub>3</sub> Single Crystals for Fundamental Studies
Hobson, T. D. C., Hutter, O. S., Birkett, M., Veal, T. D., & Durose, K. (2018). Growth and Characterization of Sb<sub>2</sub>Se<sub>3</sub> Single Crystals for Fundamental Studies. In 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) (pp. 0818-0822). Retrieved from https://www.webofscience.com/
Band gap temperature-dependence and exciton-like state in copper antimony sulphide, CuSbS2
Birkett, M., Savory, C. N., Rajpalke, M. K., Linhart, W. M., Whittles, T. J., Gibbon, J. T., . . . Veal, T. D. (2018). Band gap temperature-dependence and exciton-like state in copper antimony sulphide, CuSbS2. APL Materials, 6(8). doi:10.1063/1.5030207
Band gap temperature-dependence of close-space sublimation grown Sb2Se3 by photo-reflectance
Birkett, M., Linhart, W., Stoner, J., Phillips, L. J., Durose, K., Alaria, J., . . . Veal, T. D. (2018). Band gap temperature-dependence of close-space sublimation grown Sb2Se3 by photo-reflectance. APL Materials, 6(8), 8 pages. doi:10.1063/1.5027157
Self-Compensation in Transparent Conducting F-Doped SnO<sub>2</sub>
Swallow, J. E. N., Williamson, B. A. D., Whittles, T. J., Birkett, M., Featherstone, T. J., Peng, N., . . . Veal, T. D. (2018). Self-Compensation in Transparent Conducting F-Doped SnO<sub>2</sub>. ADVANCED FUNCTIONAL MATERIALS, 28(4). doi:10.1002/adfm.201701900
2017
Core Levels, Band Alignments, and Valence-Band States in CuSbS<sub>2</sub> for Solar Cell Applications
Whittles, T. J., Veal, T. D., Savory, C. N., Welch, A. W., Lucas, F. W. D. S., Gibbon, J. T., . . . Dhanak, V. R. (2017). Core Levels, Band Alignments, and Valence-Band States in CuSbS<sub>2</sub> for Solar Cell Applications. ACS APPLIED MATERIALS & INTERFACES, 9(48), 41916-41926. doi:10.1021/acsami.7b14208
Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitride Cu3N
Birkett, M., Savory, C. N., Fioretti, A. N., Thompson, P., Muryn, C. A., Weerakkody, A. D., . . . Veal, T. D. (2017). Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitride Cu3N. Physical Review B - Condensed Matter and Materials Physics, 95. doi:10.1103/PhysRevB.95.115201
2016
Optical properties of earth-abundant semiconductors for renewable energy
Birkett, M. (2016, July 4). Optical properties of earth-abundant semiconductors for renewable energy.
2014
Contactless electroreflectance and theoretical studies of band gap and spin-orbit splitting in InP<sub>1-x</sub>Bi<sub>x</sub> dilute bismide with x ≤ 0.034
Kopaczek, J., Kudrawiec, R., Polak, M. P., Scharoch, P., Birkett, M., Veal, T. D., . . . Wang, S. (2014). Contactless electroreflectance and theoretical studies of band gap and spin-orbit splitting in InP<sub>1-x</sub>Bi<sub>x</sub> dilute bismide with x ≤ 0.034. APPLIED PHYSICS LETTERS, 105(22). doi:10.1063/1.4903179
Bi-induced band gap reduction in epitaxial InSbBi alloys
Rajpalke, M., Linhart, W., Yu, K. M., Birkett, M., Alaria, J., Bomphrey, J. J., . . . Veal, T. (2014). Bi-induced band gap reduction in epitaxial InSbBi alloys. Applied Physics Letters, 105(21). doi:10.1063/1.4902442
High Bi content GaSbBi alloys
Rajpalke, M. K., Linhart, W. M., Birkett, M., Yu, K. M., Alaria, J., Kopaczek, J., . . . Veal, T. D. (2014). High Bi content GaSbBi alloys. JOURNAL OF APPLIED PHYSICS, 116(4). doi:10.1063/1.4891217
2013
Growth and properties of GaSbBi alloys
Rajpalke, M. K., Linhart, W. M., Birkett, M., Yu, K. M., Scanlon, D. O., Buckeridge, J., . . . Veal, T. D. (2013). Growth and properties of GaSbBi alloys. APPLIED PHYSICS LETTERS, 103(14). doi:10.1063/1.4824077