Overview
The group of Prof. Alessandro Troisi is now seeking Doctoral applicants to take part to the Marie Sklodowska-Curie Training Network programme FADOS (part of a cohort of 17 Doctoral students scattered among 16 European institutions). The student will develop suitable model for the study of the highly relevant class of doped polymeric semiconductors with application ranging from energy storage and generation to bioelectronics.
About this opportunity
The objectives of the project are (i) to develop a model reduction scheme that enables the description of charge transport in the presence of (gradient of) dopants from atomistic models of realistic models; (ii) to exploit the model to describe the relation between chemical composition and electrical transport and mechanical properties; (iii) to devise in-silico strategies for the optimization of materials and dopants. Within the broad objective a range of methodologies can be used including but not limited to classical simulation, hybrid quantum mechanical and classical models, phenomenological models (kinetics, quantum dynamics). There is flexibility to adapt the project to the scientific interest of the PhD student exploiting the broad network of collaborators. The project will include two secondments provisionally taking place at (1) the University of Heidelberg (Germany), hosted by Prof. M. Kemerink) and (2) Universidate Da Coruna (Spain), hosted by Dr. J. Pérez.
The host group specializes in the study of charge and energy transport in organic materials, high-throughput virtual screening and machine learning application to materials discovery. Additional information is available at https://www.liverpool.ac.uk/people/alessandro-troisi
Relevant publications in the area of this research include DOI: 10.1039/D5MH00485C and DOI: 10.1021/acs.jctc.3c01417
FADOS, Fundamentals and Applications of Doped Organic Semiconductors, is a consortium composed of eight universities, four research institutes, and four companies from EU countries, the UK and Switzerland.
The mission of FADOS is to achieve targeted modification of semiconductor properties through electronic doping to control and modify its electronic characteristics. The project’s goal is to develop fundamental understanding and innovative fabrication processes to solve urgent problems in organic electronic devices, and enable new components with sustainable functionalities. Collaboration with industry partners will enhance the translation of research into real-world applications. This studentship is one of the 17 offered by this international consortium.
Additional Eligibility criteria for FADOS programme:
- At the time of recruitment, be in the first four years of their research career and have not been awarded a doctoral degree.
- Mobility rule: The applicant must not have resided or carried out their main activity (work, studies, etc.) in the United Kingdom for more than 12 months in the 3 years immediately prior to the recruitment. Compulsory national service, short stays such as holidays, and time spent as part of a procedure for obtaining refugee status under the Geneva Convention are not taken into account.
- The applicant can be of any nationality.