Photo of Prof Tim Veal

Prof Tim Veal MPhys PhD FHEA MInstP

Professor of Materials Physics Physics

    Publications

    2020

    Influence of Polymorphism on the Electronic Structure of Ga$_2$O$_3$ (Journal article)

    Swallow, J. E. N., Vorwerk, C., Mazzolini, P., Vogt, P., Bierwagen, O., Karg, A., . . . Regoutz, A. (n.d.). Influence of Polymorphism on the Electronic Structure of Ga$_2$O$_3$. Chemistry of Materials, 2020. doi:10.1021/acs.chemmater.0c02465

    DOI: 10.1021/acs.chemmater.0c02465

    Na2Fe2OS2, a new earth abundant oxysulphide cathode material for Na-ion batteries (Journal article)

    Gamon, J., Perez, A. J., Jones, L. A. H., Zanella, M., Daniels, L. M., Morris, R. E., . . . Rosseinsky, M. J. (n.d.). Na2Fe2OS2, a new earth abundant oxysulphide cathode material for Na-ion batteries. Journal of Materials Chemistry A. doi:10.1039/d0ta07966a

    DOI: 10.1039/d0ta07966a

    Sb 5s2 lone pairs and band alignment of Sb2Se3: a photoemission and density functional theory study (Journal article)

    Don, C. H., Shiel, H., Hobson, T. D. C., Savory, C. N., Swallow, J. E. N., Smiles, M. J., . . . Veal, T. D. (n.d.). Sb 5s2 lone pairs and band alignment of Sb2Se3: a photoemission and density functional theory study. Journal of Materials Chemistry C. doi:10.1039/d0tc03470c

    DOI: 10.1039/d0tc03470c

    Vacancy-Ordered Double Perovskite Cs2TeI6 Thin Films for Optoelectronics (Journal article)

    Vazquez-Fernandez, I., Mariotti, S., Hutter, O. S., Birkett, M., Veal, T. D., Hobson, T. D. C., . . . Durose, K. (n.d.). Vacancy-Ordered Double Perovskite Cs2TeI6 Thin Films for Optoelectronics. Chemistry of Materials. doi:10.1021/acs.chemmater.0c02150

    DOI: 10.1021/acs.chemmater.0c02150

    Sn 5 s 2 lone pairs and the electronic structure of tin sulphides: A photoreflectance, high-energy photoemission, and theoretical investigation (Journal article)

    Jones, L., Linhart, W., Fleck, N., Swallow, J., Murgatroyd, P., Shiel, H., . . . Dhanak, V. (n.d.). Sn 5s2 lone pairs and the electronic structure of tin sulphides: A photoreflectance, high-energy photoemission, and theoretical investigation. Physical Review Materials, 4. doi:10.1103/PhysRevMaterials.4.074602

    DOI: 10.1103/PhysRevMaterials.4.074602

    Identifying Raman Modes of Sb2Se3 and their Symmetries using Angle-Resolved Polarised Raman Spectra (Journal article)

    Fleck, N., Hobson, T., Savory, C., Buckeridge, J., Veal, T., Correia, M., . . . Jaeckel, F. (2020). Identifying Raman Modes of Sb2Se3 and their Symmetries using Angle-Resolved Polarised Raman Spectra. Journal of Materials Chemistry A, 2020(8), 8337-8344. doi:10.1039/D0TA01783C

    DOI: 10.1039/D0TA01783C

    GeSe: optical spectroscopy and theoretical study of a van der Waals solar absorber (Journal article)

    Murgatroyd, P. A. E., Smiles, M. J., Savory, C. N., Shalvey, T. P., Swallow, J. E. N., Fleck, N., . . . Veal, T. D. (2020). GeSe: Optical Spectroscopy and Theoretical Study of a van der Waals Solar Absorber. CHEMISTRY OF MATERIALS, 32(7), 3245-3253. doi:10.1021/acs.chemmater.0c00453

    DOI: 10.1021/acs.chemmater.0c00453

    Isotype heterojunction solar cells using n-type Sb2Se3 thin films (Journal article)

    Hobson, T. D. C., Phillips, L. J., Hutter, O. S., Shiel, H., Swallow, J. E. N., Savory, C. N., . . . Major, J. D. (2020). Isotype heterojunction solar cells using n-type Sb2Se3 thin films. Chemistry of Materials, 32(6), 2621-2630. doi:10.1021/acs.chemmater.0c00223

    DOI: 10.1021/acs.chemmater.0c00223

    Resonant Ta Doping for Enhanced Mobility in Transparent Conducting SnO2 (Journal article)

    Williamson, B. A. D., Featherstone, T. J., Sathasivam, S. S., Swallow, J. E. N., Shiel, H., Jones, L. A. H., . . . Scanlon, D. O. (2020). Resonant Ta Doping for Enhanced Mobility in Transparent Conducting SnO2. Chemistry of Materials, 32(5), 1964-1973. doi:10.1021/acs.chemmater.9b04845

    DOI: 10.1021/acs.chemmater.9b04845

    2019

    Chemical etching of Sb2Se3 solar cells: surface chemistry and back contact behaviour (Journal article)

    Shiel, H., Hutter, O. S., Phillips, L. J., Turkestani, M. A., Dhanak, V. R., Veal, T. D., . . . Major, J. D. (n.d.). Chemical etching of Sb2Se3 solar cells: surface chemistry and back contact behaviour. Journal of Physics: Energy, 1(4), 045001. doi:10.1088/2515-7655/ab3c98

    DOI: 10.1088/2515-7655/ab3c98

    Resonant doping for high mobility transparent conductors: the case of Mo-doped In2O3 (Journal article)

    Swallow, J. E. N., Williamson, B. A. D., Sathasivam, S., Birkett, M., Featherstone, T. J., Murgatroyd, P. A. E., . . . Veal, T. D. (2020). Resonant doping for high mobility transparent conductors: the case of Mo-doped In2O3. Materials Horizons, 7(1), 236-243. doi:10.1039/c9mh01014a

    DOI: 10.1039/c9mh01014a

    Band Alignments, Band Gap, Core-levels and Valence-Band States in Cu3BiS3 for Photovoltaics (Journal article)

    Whittles, T. J., Veal, T. D., Savory, C. N., Yates, P. J., Murgatroyd, P. A. E., Gibbon, J. T., . . . Dhanak, V. R. (2019). Band Alignments, Band Gap, Core Levels, and Valence Band States in Cu3BiS3 for Photovoltaics. ACS APPLIED MATERIALS & INTERFACES, 11(30), 27033-27047. doi:10.1021/acsami.9b04268

    DOI: 10.1021/acsami.9b04268

    Intrinsic point defects and the n- and p-type dopability of the narrow gap semiconductors GaSb and InSb (Journal article)

    Buckeridge, J., Veal, T. D., Catlow, C. R. A., & Scanlon, D. O. (2019). Intrinsic point defects and the n- and p-type dopability of the narrow gap semiconductors GaSb and InSb. PHYSICAL REVIEW B, 100(3). doi:10.1103/PhysRevB.100.035207

    DOI: 10.1103/PhysRevB.100.035207

    Evidence of a second-order Peierls-driven metal-insulator transition in crystalline NbO2 (Journal article)

    Wahila, M. J., Paez, G., Singh, C. N., Regoutz, A., Sallis, S., Zuba, M. J., . . . Piper, L. F. J. (2019). Evidence of a second-order Peierls-driven metal-insulator transition in crystalline NbO2. Physical Review Materials, 3. doi:10.1103/PhysRevMaterials.3.074602

    DOI: 10.1103/PhysRevMaterials.3.074602

    Introduction (Chapter)

    Bulmer, M., & Solomos, J. (2019). Introduction. In Unknown Book (Vol. 42, pp. 329-330). doi:10.1080/01419870.2019.1538532

    DOI: 10.1080/01419870.2019.1538532

    Transition from electron accumulation to depletion at ß-Ga2O3 surfaces: The role of hydrogen and the charge neutrality level (Journal article)

    Swallow, J., Varley, J., Jones, L., Gibbon, J., Piper, L., Dhanak, V., & Veal, T. D. (2019). Transition from electron accumulation to depletion at ß-Ga2O3 surfaces: The role of hydrogen and the charge neutrality level. APL Materials, 7(02). doi:10.1063/1.5054091

    DOI: 10.1063/1.5054091

    Nitrogen pair-induced temperature insensitivity of the band gap of GaNSb alloys (Journal article)

    Linhart, W. M., Rajpalke, M. K., Birkett, M., Walker, D., Ashwin, M. J., & Veal, T. D. (2019). Nitrogen pair-induced temperature insensitivity of the band gap of GaNSb alloys. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 52(4). doi:10.1088/1361-6463/aaeec9

    DOI: 10.1088/1361-6463/aaeec9

    2018

    A hard x-ray photoemission study of transparent conducting fluorine-doped tin dioxide (Conference Paper)

    Swallow, J. E. N., Williamson, B. A. D., Birkett, M., Abbott, A., Farnworth, M., Featherstone, T. J., . . . IEEE. (2018). A hard x-ray photoemission study of transparent conducting fluorine-doped tin dioxide. In 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) (pp. 3051-3055). Retrieved from http://gateway.webofknowledge.com/

    Growth and Characterization of Sb2Se3 Single Crystals for Fundamental Studies (Conference Paper)

    Hobson, T. D. C., Hutter, O. S., Birkett, M., Veal, T. D., Durose, K., & IEEE. (2018). Growth and Characterization of Sb2Se3 Single Crystals for Fundamental Studies. In 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) (pp. 0818-0822). Retrieved from http://gateway.webofknowledge.com/

    Transparent Ta doped SnO2 films deposited by RF co-sputtering (Conference Paper)

    Featherstone, T. J., Swallow, J. E. N., Major, J. D., Durose, K., Veal, T. D., & IEEE. (2018). Transparent Ta doped SnO2 films deposited by RF co-sputtering. In 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) (pp. 2980-2984). Retrieved from http://gateway.webofknowledge.com/

    Band gap temperature-dependence and exciton-like state in copper antimony sulphide, CuSbS2 (Journal article)

    Birkett, M., Savory, C. N., Rajpalke, M. K., Linhart, W. M., Whittles, T. J., Gibbon, J. T., . . . Veal, T. D. (2018). Band gap temperature-dependence and exciton-like state in copper antimony sulphide, CuSbS2. APL Materials, 6(8). doi:10.1063/1.5030207

    DOI: 10.1063/1.5030207

    Band gap temperature-dependence of close-space sublimation grown Sb2Se3 by photo-reflectance (Journal article)

    Birkett, M., Linhart, W., Stoner, J., Phillips, L. J., Durose, K., Alaria, J., . . . Veal, T. D. (2018). Band gap temperature-dependence of close-space sublimation grown Sb2Se3 by photo-reflectance. APL Materials, 6(8), 8 pages. doi:10.1063/1.5027157

    DOI: 10.1063/1.5027157

    Self-compensation in transparent conducting F-doped SnO2 (Journal article)

    Swallow, J. E. N., Williamson, B. A. D., Whittles, T. J., Birkett, M., Featherstone, T. J., Peng, N., . . . Veal, T. D. (2018). Self-Compensation in Transparent Conducting F-Doped SnO2. ADVANCED FUNCTIONAL MATERIALS, 28(4). doi:10.1002/adfm.201701900

    DOI: 10.1002/adfm.201701900

    2017

    Valence band modification of Cr2O3 by Ni-doping: Creating a high figure of merit p-type TCO (Journal article)

    Arca, E., Kehoe, A. B., Veal, T. D., Shmeliov, A., Scanlon, D. O., Downing, C., . . . Watson, G. W. (2017). Valence band modification of Cr2O3 by Ni-doping: Creating a high figure of merit p-type TCO. Journal of Materials Chemistry C. doi:10.1039/C7TC03545D

    DOI: 10.1039/C7TC03545D

    Core Levels, Band Alignments, and Valence-Band States in CuSbS2 for Solar Cell Applications (Journal article)

    Whittles, T. J., Veal, T. D., Savory, C. N., Welch, A. W., Lucas, F. W. D. S., Gibbon, J. T., . . . Dhanak, V. R. (2017). Core Levels, Band Alignments, and Valence-Band States in CuSbS2 for Solar Cell Applications. ACS APPLIED MATERIALS & INTERFACES, 9(48), 41916-41926. doi:10.1021/acsami.7b14208

    DOI: 10.1021/acsami.7b14208

    Indium-incorporation enhancement of photoluminescence properties of Ga(In) SbBi alloys (Journal article)

    Linhart, W. M., Gladysiewicz, M., Kopaczek, J., Rajpalke, M. K., Ashwin, M. J., Veal, T. D., & Kudrawiec, R. (2017). Indium-incorporation enhancement of photoluminescence properties of Ga(In) SbBi alloys. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 50(37). doi:10.1088/1361-6463/aa7e64

    DOI: 10.1088/1361-6463/aa7e64

    Hole density and acceptor-type defects in MBE-grown GaSb1-x ?Bi x (Journal article)

    Segercrantz, N., Slotte, J., Makonnen, I., Tuomisto, F., Sandall, I. C., Ashwin, M. J., & Veal, T. D. (2017). Hole density and acceptor-type defects in MBE-grown GaSb1-x ?Bi x. Journal of Physics D: Applied Physics, 50(29), 6 pages. doi:10.1088/1361-6463/aa779a

    DOI: 10.1088/1361-6463/aa779a

    Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors (Journal article)

    Anyebe, E., Sandall, I., Jin, Z., Sanchez, A., Rajpalke, M., Veal, T., . . . Zhuang, Q. (2017). Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors. Scientific Reports, 7. doi:10.1038/srep46110

    DOI: 10.1038/srep46110

    Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitride Cu3N (Journal article)

    Birkett, M., Savory, C. N., Fioretti, A. N., Thompson, P., Muryn, C. A., Weerakkody, A. D., . . . Veal, T. D. (2017). Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitride Cu3N. Physical Review B - Condensed Matter and Materials Physics, 95. doi:10.1103/PhysRevB.95.115201

    DOI: 10.1103/PhysRevB.95.115201

    2016

    Band gap reduction in InNxSb1-x alloys: Optical absorption, k . P modeling, and density functional theory (Journal article)

    Linhart, W. M., Rajpalke, M. K., Buckeridge, J., Murgatroyd, P. A. E., Bomphrey, J. J., Alaria, J., . . . Veal, T. D. (2016). Band gap reduction in InNxSb1-x alloys: Optical absorption, k . P modeling, and density functional theory. APPLIED PHYSICS LETTERS, 109(13). doi:10.1063/1.4963836

    DOI: 10.1063/1.4963836

    Direct Measurements of Fermi Level Pinning at the Surface of Intrinsically n-Type InGaAs Nanowires (Journal article)

    Speckbacher, M., Treu, J., Whittles, T. J., Linhart, W. M., Xu, X., Saller, K., . . . Koblmüller, G. (2016). Direct Measurements of Fermi Level Pinning at the Surface of Intrinsically n-Type InGaAs Nanowires. Nano Letters: a journal dedicated to nanoscience and nanotechnology, 16(8), 5135-5142. doi:10.1021/acs.nanolett.6b02061

    DOI: 10.1021/acs.nanolett.6b02061

    Band Alignments, Valence Bands and Core Levels in the Tin Sulphides SnS, SnS2 and Sn2S3: Experiment and theory (Journal article)

    Whittles, T., Burton, L., Skelton, J., Walsh, A., Veal, T. D., & Dhanak, V. R. (2016). Band Alignments, Valence Bands and Core Levels in the Tin Sulphides SnS, SnS2 and Sn2S3: Experiment and theory. Chemistry of Materials, 28(11), 3718-3726. doi:10.1021/acs.chemmater.6b00397

    DOI: 10.1021/acs.chemmater.6b00397

    Electronic and optical properties of single crystal SnS2: an earth-abundant disulfide photocatalyst (Journal article)

    Burton, L. A., Whittles, T. J., Hesp, D., Linhart, W. M., Skelton, J. M., Hou, B., . . . Walsh, A. (2016). Electronic and optical properties of single crystal SnS2: an earth-abundant disulfide photocatalyst. JOURNAL OF MATERIALS CHEMISTRY A, 4(4), 1312-1318. doi:10.1039/c5ta08214e

    DOI: 10.1039/c5ta08214e

    2015

    Band Gap Dependence on Cation Disorder in ZnSnN2Solar Absorber (Journal article)

    Veal, T., Feldberg, N., Quackenbush, N. F., Linhart, W. M., Scanlon, D. O., Piper, L. F. J., & Durbin, S. M. (2015). Band Gap Dependence on Cation Disorder in ZnSnN2Solar Absorber. Advanced Energy Materials, 5(24). doi:10.1002/aenm.201501462

    DOI: 10.1002/aenm.201501462

    Bi flux-dependent MBE growth of GaSbBi alloys (Journal article)

    Rajpalke, M. K., Linhart, W. M., Yu, K. M., Jones, T. S., Ashwin, M. J., & Veal, T. D. (2015). Bi flux-dependent MBE growth of GaSbBi alloys. JOURNAL OF CRYSTAL GROWTH, 425, 241-244. doi:10.1016/j.jcrysgro.2015.02.093

    DOI: 10.1016/j.jcrysgro.2015.02.093

    Increased p-type conductivity in GaNxSb1-x, experimental and theoretical aspects (Journal article)

    Segercrantz, N., Makkonen, I., Slotte, J., Kujala, J., Veal, T. D., Ashwin, M. J., & Tuomisto, F. (2015). Increased p-type conductivity in GaNxSb1-x, experimental and theoretical aspects. JOURNAL OF APPLIED PHYSICS, 118(8). doi:10.1063/1.4929751

    DOI: 10.1063/1.4929751

    Realization of Vertically Aligned, Ultrahigh Aspect Ratio InAsSb Nanowires on Graphite (Journal article)

    Anyebe, E. A., Sanchez, A. M., Hindmarsh, S., Chen, X., Shao, J., Rajpalke, M. K., . . . Zhuang, Q. (2015). Realization of Vertically Aligned, Ultrahigh Aspect Ratio InAsSb Nanowires on Graphite. NANO LETTERS, 15(7), 4348-4355. doi:10.1021/acs.nanolett.5b00411

    DOI: 10.1021/acs.nanolett.5b00411

    Origin of High Mobility in Molybdenum-Doped Indium Oxide (Journal article)

    Bhachu, D. S., Scanlon, D. O., Sankar, G., Veal, T. D., Egdell, R. G., Cibin, G., . . . Parkin, I. P. (2015). Origin of High Mobility in Molybdenum-Doped Indium Oxide. CHEMISTRY OF MATERIALS, 27(8), 2788-2796. doi:10.1021/cm503896h

    DOI: 10.1021/cm503896h

    Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1-x Sb (x) nanowires (Journal article)

    Anyebe, E. A., Rajpalke, M. K., Veal, T. D., Jin, C. J., Wang, Z. M., & Zhuang, Q. D. (2015). Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1-x Sb (x) nanowires. NANO RESEARCH, 8(4), 1309-1319. doi:10.1007/s12274-014-0621-x

    DOI: 10.1007/s12274-014-0621-x

    Sb-Induced Phase Control of InAsSb Nanowires Grown by Molecular Beam Epitaxy (Journal article)

    Zhuang, Q. D., Anyebe, E. A., Chen, R., Liu, H., Sanchez, A. M., Rajpalke, M. K., . . . Sun, H. D. (2015). Sb-Induced Phase Control of InAsSb Nanowires Grown by Molecular Beam Epitaxy. Nano Letters, 15(02), 1109-1116. doi:10.1021/nl5040946

    DOI: 10.1021/nl5040946

    2014

    Contactless electroreflectance and theoretical studies of band gap and spin-orbit splitting in InP1-xBix dilute bismide with x <= 0.034 (Journal article)

    Kopaczek, J., Kudrawiec, R., Polak, M. P., Scharoch, P., Birkett, M., Veal, T. D., . . . Wang, S. (2014). Contactless electroreflectance and theoretical studies of band gap and spin-orbit splitting in InP1-xBix dilute bismide with x <= 0.034. APPLIED PHYSICS LETTERS, 105(22). doi:10.1063/1.4903179

    DOI: 10.1063/1.4903179

    Bi-induced band gap reduction in epitaxial InSbBi alloys (Journal article)

    Rajpalke, M., Linhart, W., Yu, K. M., Birkett, M., Alaria, J., Bomphrey, J. J., . . . Veal, T. (2014). Bi-induced band gap reduction in epitaxial InSbBi alloys. Applied Physics Letters, 105(21). doi:10.1063/1.4902442

    DOI: 10.1063/1.4902442

    Low- and high-energy photoluminescence from GaSb1-xBix with 0 < x <= 0.042 (Journal article)

    Kopaczek, J., Kudrawiec, R., Linhart, W., Rajpalke, M., Jones, T., Ashwin, M., & Veal, T. (2014). Low- and high-energy photoluminescence from GaSb1-xBix with 0 < x <= 0.042. APPLIED PHYSICS EXPRESS, 7(11). doi:10.7567/APEX.7.111202

    DOI: 10.7567/APEX.7.111202

    Valence-band density of states and surface electron accumulation in epitaxial SnO2 films (Journal article)

    Farahani, S. K. V., Veal, T. D., Mudd, J. J., Scanlon, D. O., Watson, G. W., Bierwagen, O., . . . McConville, C. F. (2014). Valence-band density of states and surface electron accumulation in epitaxial SnO2 films. PHYSICAL REVIEW B, 90(15). doi:10.1103/PhysRevB.90.155413

    DOI: 10.1103/PhysRevB.90.155413

    Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys (Journal article)

    Kopaczek, J., Rajpalke, M. K., Linhart, W. M., Jones, T. S., Ashwin, M. J., Kudrawiec, R., & Veal, T. D. (2014). Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys. APPLIED PHYSICS LETTERS, 105(11). doi:10.1063/1.4895930

    DOI: 10.1063/1.4895930

    Theoretical and experimental studies of electronic band structure for GaSb1-xBix in the dilute Bi regime (Journal article)

    Polak, M. P., Scharoch, P., Kudrawiec, R., Kopaczek, J., Winiarski, M. J., Linhart, W. M., . . . Veal, T. D. (2014). Theoretical and experimental studies of electronic band structure for GaSb1-xBix in the dilute Bi regime. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 47(35). doi:10.1088/0022-3727/47/35/355107

    DOI: 10.1088/0022-3727/47/35/355107

    High Bi content GaSbBi alloys (Journal article)

    Rajpalke, M. K., Linhart, W. M., Birkett, M., Yu, K. M., Alaria, J., Kopaczek, J., . . . Veal, T. D. (2014). High Bi content GaSbBi alloys. JOURNAL OF APPLIED PHYSICS, 116(4). doi:10.1063/1.4891217

    DOI: 10.1063/1.4891217

    Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy (Journal article)

    Zhuang, Q. D., Anyebe, E. A., Sanchez, A. M., Rajpalke, M. K., Veal, T. D., Zhukov, A., . . . Fal'ko, V. (2014). Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy. NANOSCALE RESEARCH LETTERS, 9. doi:10.1186/1556-276X-9-321

    DOI: 10.1186/1556-276X-9-321

    Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature (Journal article)

    Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Dhanak, V. R., Linhart, W. M., Veal, T. D., . . . Dimoulas, A. (2014). Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature. Journal of Applied Physics, 115(11). doi:10.1063/1.4868091

    DOI: 10.1063/1.4868091

    N incorporation and associated localized vibrational modes in GaSb (Journal article)

    Buckeridge, J., Scanlon, D. O., Veal, T. D., Ashwin, M. J., Walsh, A., & Catlow, C. R. A. (2014). N incorporation and associated localized vibrational modes in GaSb. PHYSICAL REVIEW B, 89(1). doi:10.1103/PhysRevB.89.014107

    DOI: 10.1103/PhysRevB.89.014107

    Growth of ZnSnN2 by Molecular Beam Epitaxy (Journal article)

    Feldberg, N., Aldous, J. D., Stampe, P. A., Kennedy, R. J., Veal, T. D., & Durbin, S. M. (2014). Growth of ZnSnN2 by Molecular Beam Epitaxy. JOURNAL OF ELECTRONIC MATERIALS, 43(4), 884-888. doi:10.1007/s11664-013-2962-8

    DOI: 10.1007/s11664-013-2962-8

    2013

    Temperature dependence of the band gap of GaSb1-xBix alloys with 0 < x <= 0.042 determined by photoreflectance (Journal article)

    Kopaczek, J., Kudrawiec, R., Linhart, W. M., Rajpalke, M. K., Yu, K. M., Jones, T. S., . . . Veal, T. D. (2013). Temperature dependence of the band gap of GaSb1-xBix alloys with 0 < x <= 0.042 determined by photoreflectance. APPLIED PHYSICS LETTERS, 103(26). doi:10.1063/1.4858967

    DOI: 10.1063/1.4858967

    Materials Research Society Symposium Proceedings: Preface (Conference Paper)

    Schleife, A., Allen, M., Arnold, C. B., Durbin, S. M., Pryds, N., Schneider, C. W., & Veal, T. (2013). Materials Research Society Symposium Proceedings: Preface. In Materials Research Society Symposium Proceedings Vol. 1494.

    The first 25 years of semiconductor muonics at ISIS, modelling the electrical activity of hydrogen in inorganic semiconductors and high-kappa dielectrics (Journal article)

    Cox, S. F. J., Lichti, R. L., Lord, J. S., Davis, E. A., Vilao, R. C., Gil, J. M., . . . Celebi, Y. G. (2013). The first 25 years of semiconductor muonics at ISIS, modelling the electrical activity of hydrogen in inorganic semiconductors and high-kappa dielectrics. PHYSICA SCRIPTA, 88(6). doi:10.1088/0031-8949/88/06/068503

    DOI: 10.1088/0031-8949/88/06/068503

    Growth and properties of GaSbBi alloys (Journal article)

    Rajpalke, M. K., Linhart, W. M., Birkett, M., Yu, K. M., Scanlon, D. O., Buckeridge, J., . . . Veal, T. D. (2013). Growth and properties of GaSbBi alloys. APPLIED PHYSICS LETTERS, 103(14). doi:10.1063/1.4824077

    DOI: 10.1063/1.4824077

    Sulfur passivation of surface electrons in highly Mg-doped InN (Journal article)

    Linhart, W. M., Chai, J., McConville, C. F., Durbin, S. M., & Veal, T. D. (2013). Sulfur passivation of surface electrons in highly Mg-doped InN. JOURNAL OF APPLIED PHYSICS, 114(10). doi:10.1063/1.4820483

    DOI: 10.1063/1.4820483

    Growth, disorder, and physical properties of ZnSnN2 (Journal article)

    Feldberg, N., Aldous, J. D., Linhart, W. M., Phillips, L. J., Durose, K., Stampe, P. A., . . . Durbin, S. M. (2013). Growth, disorder, and physical properties of ZnSnN2. APPLIED PHYSICS LETTERS, 103(4). doi:10.1063/1.4816438

    DOI: 10.1063/1.4816438

    Optical absorption by dilute GaNSb alloys: Influence of N pair states (Journal article)

    Mudd, J. J., Kybert, N. J., Linhart, W. M., Buckle, L., Ashley, T., King, P. D. C., . . . Veal, T. D. (2013). Optical absorption by dilute GaNSb alloys: Influence of N pair states. APPLIED PHYSICS LETTERS, 103(4). doi:10.1063/1.4816519

    DOI: 10.1063/1.4816519

    Molecular-beam epitaxy and lattice parameter of GaNxSb1-x: deviation from Vegard's law for x > 0.02 (Journal article)

    Ashwin, M. J., Morris, R. J. H., Walker, D., Thomas, P. A., Dowsett, M. G., Jones, T. S., & Veal, T. D. (2013). Molecular-beam epitaxy and lattice parameter of GaNxSb1-x: deviation from Vegard's law for x > 0.02. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 46(26). doi:10.1088/0022-3727/46/26/264003

    DOI: 10.1088/0022-3727/46/26/264003

    Impact of degenerate n-doping on the optical absorption edge in transparent conducting cadmium oxide (Journal article)

    Farahani, S. K. V., McConville, C. F., Veal, T. D., & Schleife, A. (2013). Impact of degenerate n-doping on the optical absorption edge in transparent conducting cadmium oxide. OXIDE-BASED MATERIALS AND DEVICES IV, 8626. doi:10.1117/12.2004359

    DOI: 10.1117/12.2004359

    N incorporation in GaInNSb alloys and lattice matching to GaSb (Journal article)

    Ashwin, M. J., Walker, D., Thomas, P. A., Jones, T. S., & Veal, T. D. (2013). N incorporation in GaInNSb alloys and lattice matching to GaSb. JOURNAL OF APPLIED PHYSICS, 113(3). doi:10.1063/1.4775745

    DOI: 10.1063/1.4775745

    Temperature dependence of the direct bandgap and transport properties of CdO (Journal article)

    Farahani, S. K. V., Munoz-Sanjose, V., Zuniga-Perez, J., McConville, C. F., & Veal, T. D. (2013). Temperature dependence of the direct bandgap and transport properties of CdO. APPLIED PHYSICS LETTERS, 102(2). doi:10.1063/1.4775691

    DOI: 10.1063/1.4775691

    2012

    Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO2 on sapphire (Journal article)

    Farahani, S. K. V., Veal, T. D., Sanchez, A. M., Bierwagen, O., White, M. E., Gorfman, S., . . . McConville, C. F. (2012). Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO2 on sapphire. PHYSICAL REVIEW B, 86(24). doi:10.1103/PhysRevB.86.245315

    DOI: 10.1103/PhysRevB.86.245315

    Giant Reduction of InN Surface Electron Accumulation: Compensation of Surface Donors by Mg Dopants (Journal article)

    Linhart, W. M., Chai, J., Morris, R. J. H., Dowsett, M. G., McConville, C. F., Durbin, S. M., & Veal, T. D. (2012). Giant Reduction of InN Surface Electron Accumulation: Compensation of Surface Donors by Mg Dopants. PHYSICAL REVIEW LETTERS, 109(24). doi:10.1103/PhysRevLett.109.247605

    DOI: 10.1103/PhysRevLett.109.247605

    Epitaxial InGaN on Nitridated Si(111) for Photovoltaic Applications (Conference Paper)

    Yao, Y., Aldous, J. D., Won, D., Redwing, J. M., Linhart, W., McConville, C. F., . . . IEEE. (2012). Epitaxial InGaN on Nitridated Si(111) for Photovoltaic Applications. In 2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) (pp. 2617-2620). Retrieved from http://gateway.webofknowledge.com/

    ZnSnN2: A New Earth-Abundant Element Semiconductor for Solar Cells (Conference Paper)

    Feldberg, N., Keen, B., Aldous, J. D., Scanlon, D. O., Stampe, P. A., Kennedy, R. J., . . . IEEE. (2012). ZnSnN2: A New Earth-Abundant Element Semiconductor for Solar Cells. In 2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) (pp. 2524-2527). Retrieved from http://gateway.webofknowledge.com/

    Structural, electrical and optical characterization of MOCVD grown In-rich InGaN layers (Journal article)

    Tuna, O., Linhart, W. M., Lutsenko, E. V., Rzheutski, M. V., Yablonskii, G. P., Veal, T. D., . . . Heuken, M. (2012). Structural, electrical and optical characterization of MOCVD grown In-rich InGaN layers. JOURNAL OF CRYSTAL GROWTH, 358, 51-56. doi:10.1016/j.jcrysgro.2012.07.040

    DOI: 10.1016/j.jcrysgro.2012.07.040

    Electronic Properties of Post-transition Metal Oxide Semiconductor Surfaces (Journal article)

    Veal, T. D., King, P. D. C., & McConville, C. F. (2012). Electronic Properties of Post-transition Metal Oxide Semiconductor Surfaces. Unknown Journal, 127-145. doi:10.1007/978-1-4419-9931-3_6

    DOI: 10.1007/978-1-4419-9931-3_6

    Introduction (Journal article)

    Durbin, S., Veal, T., Grundmann, M., & Phillips, J. (2012). Introduction. JOURNAL OF MATERIALS RESEARCH, 27(17), 2179. doi:10.1557/jmr.2012.263

    DOI: 10.1557/jmr.2012.263

    Self-compensation in highly n-type InN (Journal article)

    Rauch, C., Tuomisto, F., King, P. D. C., Veal, T. D., Lu, H., & Schaff, W. J. (2012). Self-compensation in highly n-type InN. APPLIED PHYSICS LETTERS, 101(1). doi:10.1063/1.4732508

    DOI: 10.1063/1.4732508

    Surface electronic properties of In-rich InGaN alloys grown by MOCVD (Journal article)

    Linhart, W. M., Tuna, O., Veal, T. D., Mudd, J. J., Giesen, C., Heuken, M., & McConville, C. F. (2012). Surface electronic properties of In-rich InGaN alloys grown by MOCVD. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 9(3-4), 662-665. doi:10.1002/pssc.201100463

    DOI: 10.1002/pssc.201100463

    MBE growth and characterization of Mn-doped InN (Journal article)

    Chai, J. H., Myers, T. H., Song, Y. -W., Reeves, R. J., Linhart, W. M., Morris, R. J. H., . . . Durbin, S. M. (2012). MBE growth and characterization of Mn-doped InN. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 30(2). doi:10.1116/1.3687903

    DOI: 10.1116/1.3687903

    2011

    Controlled nitrogen incorporation in GaNSb alloys (Journal article)

    Ashwin, M. J., Veal, T. D., Bomphrey, J. J., Dunn, I. R., Walker, D., Thomas, P. A., & Jones, T. S. (2011). Controlled nitrogen incorporation in GaNSb alloys. AIP ADVANCES, 1(3). doi:10.1063/1.3643259

    DOI: 10.1063/1.3643259

    Conductivity in transparent oxide semiconductors (Journal article)

    King, P. D. C., & Veal, T. D. (2011). Conductivity in transparent oxide semiconductors. JOURNAL OF PHYSICS-CONDENSED MATTER, 23(33). doi:10.1088/0953-8984/23/33/334214

    DOI: 10.1088/0953-8984/23/33/334214

    Thickness dependence of the strain, band gap and transport properties of epitaxial In2O3 thin films grown on Y-stabilised ZrO2(111) (Journal article)

    Zhang, K. H. L., Lazarov, V. K., Veal, T. D., Oropeza, F. E., McConville, C. F., Egdell, R. G., & Walsh, A. (2011). Thickness dependence of the strain, band gap and transport properties of epitaxial In2O3 thin films grown on Y-stabilised ZrO2(111). JOURNAL OF PHYSICS-CONDENSED MATTER, 23(33). doi:10.1088/0953-8984/23/33/334211

    DOI: 10.1088/0953-8984/23/33/334211

    Stable passivation of InN surface electron accumulation with sulphur treatment (Journal article)

    Bailey, L. R., Veal, T. D., McConville, C. F., Gil, B., Briot, O., & Amano, H. (2011). Stable passivation of InN surface electron accumulation with sulphur treatment. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 5, 8(5). doi:10.1002/pssc.201100552

    DOI: 10.1002/pssc.201100552

    Electron mobility in CdO films (Journal article)

    Farahani, S. K. V., Veal, T. D., King, P. D. C., Zuniga-Perez, J., Munoz-Sanjose, V., & McConville, C. F. (2011). Electron mobility in CdO films. JOURNAL OF APPLIED PHYSICS, 109(7). doi:10.1063/1.3562141

    DOI: 10.1063/1.3562141

    Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors (Journal article)

    Allen, M. W., Zemlyanov, D. Y., Waterhouse, G. I. N., Metson, J. B., Veal, T. D., McConville, C. F., & Durbin, S. M. (2011). Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors. APPLIED PHYSICS LETTERS, 98(10). doi:10.1063/1.3562308

    DOI: 10.1063/1.3562308

    2010

    Surface, bulk, and interface electronic properties of nonpolar InN (Journal article)

    Linhart, W. M., Veal, T. D., King, P. D. C., Koblmueller, G., Gallinat, C. S., Speck, J. S., & McConville, C. F. (2010). Surface, bulk, and interface electronic properties of nonpolar InN. APPLIED PHYSICS LETTERS, 97(11). doi:10.1063/1.3488821

    DOI: 10.1063/1.3488821

    Surface Band-Gap Narrowing in Quantized Electron Accumulation Layers (Journal article)

    King, P. D. C., Veal, T. D., McConville, C. F., Zuniga-Perez, J., Munoz-Sanjose, V., Hopkinson, M., . . . Hofmann, P. (2010). Surface Band-Gap Narrowing in Quantized Electron Accumulation Layers. PHYSICAL REVIEW LETTERS, 104(25). doi:10.1103/PhysRevLett.104.256803

    DOI: 10.1103/PhysRevLett.104.256803

    In-vacancies in Si-doped InN (Journal article)

    Rauch, C., Reurings, F., Tuomisto, F., Veal, T. D., McConville, C. F., Lu, H., . . . Sojak, S. (2010). In-vacancies in Si-doped InN. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(5), 1083-1086. doi:10.1002/pssa.200983120

    DOI: 10.1002/pssa.200983120

    Bulk transport measurements in ZnO: The effect of surface electron layers (Journal article)

    Allen, M. W., Swartz, C. H., Myers, T. H., Veal, T. D., McConville, C. F., & Durbin, S. M. (2010). Bulk transport measurements in ZnO: The effect of surface electron layers. PHYSICAL REVIEW B, 81(7). doi:10.1103/PhysRevB.81.075211

    DOI: 10.1103/PhysRevB.81.075211

    Observation of shallow-donor muonium in Ga2O3: Evidence for hydrogen-induced conductivity (Journal article)

    King, P. D. C., McKenzie, I., & Veal, T. D. (2010). Observation of shallow-donor muonium in Ga2O3: Evidence for hydrogen-induced conductivity. APPLIED PHYSICS LETTERS, 96(6). doi:10.1063/1.3309694

    DOI: 10.1063/1.3309694

    2009

    Sulfur passivation of InN surface electron accumulation (Journal article)

    Bailey, L. R., Veal, T. D., Kendrick, C. E., Durbin, S. M., & McConville, C. F. (2009). Sulfur passivation of InN surface electron accumulation. APPLIED PHYSICS LETTERS, 95(19). doi:10.1063/1.3263725

    DOI: 10.1063/1.3263725

    Surface Structure and Electronic Properties of In2O3(111) Single-Crystal Thin Films Grown on Y-Stabilized ZrO2(111) (Journal article)

    Zhang, K. H. L., Payne, D. J., Palgrave, R. G., Lazarov, V. K., Chen, W., Wee, A. T. S., . . . Egdell, R. G. (2009). Surface Structure and Electronic Properties of In2O3(111) Single-Crystal Thin Films Grown on Y-Stabilized ZrO2(111). CHEMISTRY OF MATERIALS, 21(19), 4353-4355. doi:10.1021/cm901127r

    DOI: 10.1021/cm901127r

    Indium Nitride and Related Alloys (Book)

    Veal, T. D., McConville, C. F., & Schaff, W. J. (2009). Indium Nitride and Related Alloys. CRC Press.

    Shallow donor state of hydrogen in In2O3 and SnO2: Implications for conductivity in transparent conducting oxides (Journal article)

    King, P. D. C., Lichti, R. L., Celebi, Y. G., Gil, J. M., Vilao, R. C., Alberto, H. V., . . . Veal, T. D. (2009). Shallow donor state of hydrogen in In2O3 and SnO2: Implications for conductivity in transparent conducting oxides. PHYSICAL REVIEW B, 80(8). doi:10.1103/PhysRevB.80.081201

    DOI: 10.1103/PhysRevB.80.081201

    The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy (Journal article)

    Bourlange, A., Payne, D. J., Palgrave, R. G., Zhang, H., Foord, J. S., Egdell, R. G., . . . McConville, C. F. (2009). The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy. JOURNAL OF APPLIED PHYSICS, 106(1). doi:10.1063/1.3153966

    DOI: 10.1063/1.3153966

    Surface electronic properties of Mg-doped InAlN alloys (Journal article)

    King, P. D. C., Veal, T. D., Schaff, W. J., & McConville, C. F. (2009). Surface electronic properties of Mg-doped InAlN alloys. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 246(6), 1169-1172. doi:10.1002/pssb.200880766

    DOI: 10.1002/pssb.200880766

    Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3 (Journal article)

    King, P. D. C., Veal, T. D., Fuchs, F., Wang, C. Y., Payne, D. J., Bourlange, A., . . . McConville, C. F. (2009). Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3. PHYSICAL REVIEW B, 79(20). doi:10.1103/PhysRevB.79.205211

    DOI: 10.1103/PhysRevB.79.205211

    Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations (Journal article)

    King, P. D. C., Veal, T. D., Schleife, A., Zuniga-Perez, J., Martel, B., Jefferson, P. H., . . . McConville, C. F. (2009). Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations. PHYSICAL REVIEW B, 79(20). doi:10.1103/PhysRevB.79.205205

    DOI: 10.1103/PhysRevB.79.205205

    Unintentional conductivity of indium nitride: transport modelling and microscopic origins (Journal article)

    King, P. D. C., Veal, T. D., & McConville, C. F. (2009). Unintentional conductivity of indium nitride: transport modelling and microscopic origins. JOURNAL OF PHYSICS-CONDENSED MATTER, 21(17). doi:10.1088/0953-8984/21/17/174201

    DOI: 10.1088/0953-8984/21/17/174201

    Growth and characterisation of dilute antimonide nitride materials for long-wavelength applications (Journal article)

    Buckle, L., Coomber, S. D., Ashley, T., Jefferson, P. H., Walker, D., Veal, T. D., . . . Thomas, P. A. (2009). Growth and characterisation of dilute antimonide nitride materials for long-wavelength applications. MICROELECTRONICS JOURNAL, 40(3), 399-402. doi:10.1016/j.mejo.2008.06.007

    DOI: 10.1016/j.mejo.2008.06.007

    The donor nature of muonium in undoped, heavily n-type and p-type InAs (Journal article)

    King, P. D. C., Veal, T. D., McConville, C. F., King, P. J. C., Cox, S. F. J., Celebi, Y. G., & Lichti, R. L. (2009). The donor nature of muonium in undoped, heavily n-type and p-type InAs. JOURNAL OF PHYSICS-CONDENSED MATTER, 21(7). doi:10.1088/0953-8984/21/7/075803

    DOI: 10.1088/0953-8984/21/7/075803

    Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO (Journal article)

    King, P. D. C., Veal, T. D., Jefferson, P. H., Zuniga-Perez, J., Munoz-Sanjose, V., & McConville, C. F. (2009). Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO. PHYSICAL REVIEW B, 79(3). doi:10.1103/PhysRevB.79.035203

    DOI: 10.1103/PhysRevB.79.035203

    2008

    Band bending at the surfaces of In-rich InGaN alloys (Journal article)

    Bailey, L. R., Veal, T. D., King, P. D. C., McConville, C. F., Pereiro, J., Grandal, J., . . . Calleja, E. (2008). Band bending at the surfaces of In-rich InGaN alloys. JOURNAL OF APPLIED PHYSICS, 104(11). doi:10.1063/1.3033373

    DOI: 10.1063/1.3033373

    Mechanisms in the formation of high quality Schottky contacts to n-type ZnO (Conference Paper)

    Allen, M., Von Wenckstern, H., Grundmann, M., Hatfield, S., Jefferson, P., King, P., . . . Durbin, S. (2008). Mechanisms in the formation of high quality Schottky contacts to n-type ZnO. In Materials Research Society Symposium Proceedings Vol. 1035 (pp. 11-16).

    Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy (Journal article)

    Veal, T. D., King, P. D. C., Hatfield, S. A., Bailey, L. R., McConville, C. F., Martel, B., . . . Zuniga-Perez, J. (2008). Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy. APPLIED PHYSICS LETTERS, 93(20). doi:10.1063/1.3032911

    DOI: 10.1063/1.3032911

    Ab-Initio Studies of Electronic and Spectroscopic Properties of MgO, ZnO and CdO (Journal article)

    Schleife, A., Roedl, C., Fuchs, F., Furthmueller, J., Bechstedt, F., Jefferson, P. H., . . . Munoz-Sanjose, V. (2008). Ab-Initio Studies of Electronic and Spectroscopic Properties of MgO, ZnO and CdO. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 53(5), 2811-2815. doi:10.3938/jkps.53.2811

    DOI: 10.3938/jkps.53.2811

    Influence of growth conditions and polarity on interface-related electron density in InN (Journal article)

    King, P. D. C., Veal, T. D., Gallinat, C. S., Koblmueller, G., Bailey, L. R., Speck, J. S., & McConville, C. F. (2008). Influence of growth conditions and polarity on interface-related electron density in InN. JOURNAL OF APPLIED PHYSICS, 104(10). doi:10.1063/1.3020528

    DOI: 10.1063/1.3020528

    Observation of quantized subband states and evidence for surface electron accumulation in CdO from angle-resolved photoemission spectroscopy (Journal article)

    Piper, L. F. J., Colakerol, L., King, P. D. C., Schleife, A., Zuniga-Perez, J., Glans, P. -A., . . . Smith, K. E. (2008). Observation of quantized subband states and evidence for surface electron accumulation in CdO from angle-resolved photoemission spectroscopy. PHYSICAL REVIEW B, 78(16). doi:10.1103/PhysRevB.78.165127

    DOI: 10.1103/PhysRevB.78.165127

    Surface electronic properties of clean and S-terminated InSb(001) and (111)B (Journal article)

    King, P. D. C., Veal, T. D., Lowe, M. J., & McConville, C. F. (2008). Surface electronic properties of clean and S-terminated InSb(001) and (111)B. JOURNAL OF APPLIED PHYSICS, 104(8). doi:10.1063/1.3000567

    DOI: 10.1063/1.3000567

    Surface electron accumulation and the charge neutrality level in In2O3 (Journal article)

    King, P. D. C., Veal, T. D., Payne, D. J., Bourlange, A., Egdell, R. G., & McConville, C. F. (2008). Surface electron accumulation and the charge neutrality level in In2O3. PHYSICAL REVIEW LETTERS, 101(11). doi:10.1103/PhysRevLett.101.116808

    DOI: 10.1103/PhysRevLett.101.116808

    InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements (Journal article)

    King, P. D. C., Veal, T. D., Kendrick, C. E., Bailey, L. R., Durbin, S. M., & McConville, C. F. (2008). InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements. PHYSICAL REVIEW B, 78(3). doi:10.1103/PhysRevB.78.033308

    DOI: 10.1103/PhysRevB.78.033308

    Surface electronic properties of n- and p-type InGaN alloys (Journal article)

    King, P. D. C., Veal, T. D., Lu, H., Jefferson, P. H., Hatfield, S. A., Schaff, W. J., & McConville, C. F. (2008). Surface electronic properties of n- and p-type InGaN alloys. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 245(5), 881-883. doi:10.1002/pssb.200778452

    DOI: 10.1002/pssb.200778452

    Surface electronic properties of undoped InAlN alloys (Journal article)

    King, P. D. C., Veal, T. D., Adikimenakis, A., Lu, H., Bailey, L. R., Iliopoulos, E., . . . McConville, C. F. (2008). Surface electronic properties of undoped InAlN alloys. APPLIED PHYSICS LETTERS, 92(17). doi:10.1063/1.2913765

    DOI: 10.1063/1.2913765

    Valence band density of states of zinc-blende and wurtzite InN from x-ray photoemission spectroscopy and first-principles calculations (Journal article)

    King, P. D. C., Veal, T. D., McConville, C. F., Fuchs, F., Furthmueller, J., Bechstedt, F., . . . Schaff, W. J. (2008). Valence band density of states of zinc-blende and wurtzite InN from x-ray photoemission spectroscopy and first-principles calculations. PHYSICAL REVIEW B, 77(11). doi:10.1103/PhysRevB.77.115213

    DOI: 10.1103/PhysRevB.77.115213

    Response to "Comment on 'Bandgap and effective mass determination of epitaxial cadmium oxide'" [Appl. Phys. Lett. 92, 106103 (2008)] (Journal article)

    Veal, T. D., Jefferson, P. H., King, P. D. C., Hatfield, S. A., McConville, C. F., Zuniga-Perez, J., & Munoz-Sanjose, V. (2008). Response to "Comment on 'Bandgap and effective mass determination of epitaxial cadmium oxide'" [Appl. Phys. Lett. 92, 106103 (2008)]. APPLIED PHYSICS LETTERS, 92(10). doi:10.1063/1.2896605

    DOI: 10.1063/1.2896605

    Nonparabolic coupled Poisson-Schrodinger solutions for quantized electron accumulation layers: Band bending, charge profile, and subbands at InN surfaces (Journal article)

    King, P. D. C., Veal, T. D., & McConville, C. F. (2008). Nonparabolic coupled Poisson-Schrodinger solutions for quantized electron accumulation layers: Band bending, charge profile, and subbands at InN surfaces. PHYSICAL REVIEW B, 77(12). doi:10.1103/PhysRevB.77.125305

    DOI: 10.1103/PhysRevB.77.125305

    The influence of conduction band plasmons on core-level photoemission spectra of InN (Journal article)

    King, P. D. C., Veal, T. D., Lu, H., Hatfield, S. A., Schaff, W. J., & McConville, C. F. (2008). The influence of conduction band plasmons on core-level photoemission spectra of InN. SURFACE SCIENCE, 602(4), 871-875. doi:10.1016/j.susc.2007.12.026

    DOI: 10.1016/j.susc.2007.12.026

    Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors (Journal article)

    King, P. D. C., Veal, T. D., Jefferson, P. H., Hatfield, S. A., Piper, L. F. J., McConville, C. F., . . . Schaff, W. J. (2008). Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors. PHYSICAL REVIEW B, 77(4). doi:10.1103/PhysRevB.77.045316

    DOI: 10.1103/PhysRevB.77.045316

    Bandgap and effective mass of epitaxial cadmium oxide (Journal article)

    Jefferson, P. H., Hatfield, S. A., Veal, T. D., King, P. D. C., McConville, C. F., Zuniga-Perez, J., & Munoz-Sanjose, V. (2008). Bandgap and effective mass of epitaxial cadmium oxide. APPLIED PHYSICS LETTERS, 92(2). doi:10.1063/1.2833269

    DOI: 10.1063/1.2833269

    Ab-initio studies of electronic and spectroscopic properties of MgO, ZnO and CdO (Conference Paper)

    Schleife, A., Rödl, C., Fuchs, F., Furthmüller, J., Bechstedt, F., Jefferson, P. H., . . . Muñoz-Sanjosé, V. (2008). Ab-initio studies of electronic and spectroscopic properties of MgO, ZnO and CdO. In Journal of the Korean Physical Society Vol. 53 (pp. 2811-2815). doi:10.3938/jkps.53.2811

    Growth and characterisation of dilute antimonide nitride materials for long wavelength applications (Conference Paper)

    Coomber, S. D., Buckle, L., Jefferson, P. H., Walker, D., Veal, T. D., McConville, C. F., & Ashley, T. (2008). Growth and characterisation of dilute antimonide nitride materials for long wavelength applications. In NARROW GAP SEMICONDUCTORS 2007 Vol. 119 (pp. 49-+). Retrieved from http://gateway.webofknowledge.com/

    2007

    In-adlayers on non-polar and polar InN surfaces: Ion scattering and photoemission studies (Journal article)

    Veal, T. D., King, P. D. C., Walker, M., McConville, C. F., Lu, H., & Schaff, W. J. (2007). In-adlayers on non-polar and polar InN surfaces: Ion scattering and photoemission studies. PHYSICA B-CONDENSED MATTER, 401, 351-354. doi:10.1016/j.physb.2007.08.185

    DOI: 10.1016/j.physb.2007.08.185

    X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset (Journal article)

    King, P. D. C., Veal, T. D., Hatfield, S. A., Jefferson, P. H., McConville, C. F., Kendrick, C. E., . . . Durbin, S. M. (2007). X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset. APPLIED PHYSICS LETTERS, 91(11). doi:10.1063/1.2783214

    DOI: 10.1063/1.2783214

    Photoluminescence of InNAs alloys: S-shaped temperature dependence and conduction-band nonparabolicity (Journal article)

    Merrick, M., Cripps, S. A., Murdin, B. N., Hosea, T. J. C., Veal, T. D., McConville, C. F., & Hopkinson, M. (2007). Photoluminescence of InNAs alloys: S-shaped temperature dependence and conduction-band nonparabolicity. PHYSICAL REVIEW B, 76(7). doi:10.1103/PhysRevB.76.075209

    DOI: 10.1103/PhysRevB.76.075209

    Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces (Journal article)

    King, P. D. C., Veal, T. D., McConville, C. F., Fuchs, F., Furthmueller, J., Bechstedt, F., . . . Schaff, W. J. (2007). Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces. APPLIED PHYSICS LETTERS, 91(9). doi:10.1063/1.2775807

    DOI: 10.1063/1.2775807

    In adlayers on c-plane InN surfaces: A polarity-dependent study by x-ray photoemission spectroscopy (Journal article)

    Veal, T. D., King, P. D. C., Jefferson, P. H., Piper, L. F. J., McConville, C. F., Lu, H., . . . Nanishi, Y. (2007). In adlayers on c-plane InN surfaces: A polarity-dependent study by x-ray photoemission spectroscopy. PHYSICAL REVIEW B, 76(7). doi:10.1103/PhysRevB.76.075313

    DOI: 10.1103/PhysRevB.76.075313

    X-ray photoemission studies of the electronic structure of single-crystalline CdO(100) (Journal article)

    Piper, L. F. J., Jefferson, P. H., Veal, T. D., McConville, C. F., Zuniga-Perez, J., & Munoz-Sanjose, V. (2007). X-ray photoemission studies of the electronic structure of single-crystalline CdO(100). SUPERLATTICES AND MICROSTRUCTURES, 42(1-6), 197-200. doi:10.1016/j.spmi.2007.04.029

    DOI: 10.1016/j.spmi.2007.04.029

    Growth of dilute nitride alloys of GaInSb lattice-matched to GaSb (Journal article)

    Jefferson, P. H., Buckle, L., Bennett, B. R., Veal, T. D., Walker, D., Wilson, N. R., . . . McConville, C. F. (2007). Growth of dilute nitride alloys of GaInSb lattice-matched to GaSb. JOURNAL OF CRYSTAL GROWTH, 304(2), 338-341. doi:10.1016/j.jcrysgro.2007.02.033

    DOI: 10.1016/j.jcrysgro.2007.02.033

    Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy (Journal article)

    King, P. D. C., Veal, T. D., Jefferson, P. H., McConville, C. F., Wang, T., Parbrook, P. J., . . . Schaff, W. J. (2007). Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy. APPLIED PHYSICS LETTERS, 90(13). doi:10.1063/1.2716994

    DOI: 10.1063/1.2716994

    Variation of band bending at the surface of Mg-doped InGaN: Evidence of p-type conductivity across the composition range (Journal article)

    King, P. D. C., Veal, T. D., Jefferson, P. H., McConville, C. F., Lu, H., & Schaff, W. J. (2007). Variation of band bending at the surface of Mg-doped InGaN: Evidence of p-type conductivity across the composition range. PHYSICAL REVIEW B, 75(11). doi:10.1103/PhysRevB.75.115312

    DOI: 10.1103/PhysRevB.75.115312

    Doping-dependence of subband energies in quantized electron accumulation at InN surfaces (Journal article)

    Veal, T. D., Piper, L. F. J., Phillips, M. R., Zareie, M. H., Lu, H., Schaff, W. J., & McConville, C. F. (2007). Doping-dependence of subband energies in quantized electron accumulation at InN surfaces. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 204(2), 536-542. doi:10.1002/pssa.200673226

    DOI: 10.1002/pssa.200673226

    Growth and characterisation of high quality MBE grown InNxSb1-x (Journal article)

    Jefferson, P. H., Buckle, L., Walker, D., Veal, T. D., Coomber, S., Thomas, P. A., . . . McConville, C. F. (2007). Growth and characterisation of high quality MBE grown InNxSb1-x. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 1(3), 104-106. doi:10.1002/pssr.200701035

    DOI: 10.1002/pssr.200701035

    2006

    Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy (Journal article)

    Colakerol, L., Veal, T. D., Jeong, H. -K., Plucinski, L., DeMasi, A., Learmonth, T., . . . Smith, K. E. (2006). Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy. PHYSICAL REVIEW LETTERS, 97(23). doi:10.1103/PhysRevLett.97.237601

    DOI: 10.1103/PhysRevLett.97.237601

    Transition from electron accumulation to depletion at InGaN surfaces (Journal article)

    Veal, T. D., Jefferson, P. H., Piper, L. F. J., McConville, C. F., Joyce, T. B., Chalker, P. R., . . . Schaff, W. J. (2006). Transition from electron accumulation to depletion at InGaN surfaces. APPLIED PHYSICS LETTERS, 89(20). doi:10.1063/1.2387976

    DOI: 10.1063/1.2387976

    Band anticrossing in GaNxSb1-x (Journal article)

    Jefferson, P. H., Veal, T. D., Piper, L. F. J., Bennett, B. R., McConville, C. F., Murdin, B. N., . . . Ashley, T. (2006). Band anticrossing in GaNxSb1-x. APPLIED PHYSICS LETTERS, 89(11). doi:10.1063/1.2349832

    DOI: 10.1063/1.2349832

    InN: Fermi level stabilization by low-energy ion bombardment (Conference Paper)

    Piper, L. F. J., Veal, T. D., McConville, C. F., Lu, H., & Schaff, W. J. (2006). InN: Fermi level stabilization by low-energy ion bombardment. In PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 Vol. 3 (pp. 1841-1845). doi:10.1002/pssc.200565104

    DOI: 10.1002/pssc.200565104

    Origin of the n-type conductivity of InN: The role of positively charged dislocations (Journal article)

    Piper, L. F. J., Veal, T. D., McConville, C. F., Lu, H., & Schaff, W. J. (2006). Origin of the n-type conductivity of InN: The role of positively charged dislocations. APPLIED PHYSICS LETTERS, 88(25). doi:10.1063/1.2214156

    DOI: 10.1063/1.2214156

    Electron depletion at InAs free surfaces: Doping-induced acceptorlike gap states (Journal article)

    Piper, L. F. J., Veal, T. D., Lowe, M. J., & McConville, C. F. (2006). Electron depletion at InAs free surfaces: Doping-induced acceptorlike gap states. PHYSICAL REVIEW B, 73(19). doi:10.1103/PhysRevB.73.195321

    DOI: 10.1103/PhysRevB.73.195321

    Dilute antimonide nitrides for very long wavelength infrared applications (Conference Paper)

    Ashley, T., Buckle, L., Smith, G. W., Murdin, B. N., Jefferson, P. H., Piper, L. F. J., . . . McConville, C. F. (2006). Dilute antimonide nitrides for very long wavelength infrared applications. In INFRARED TECHNOLOGY AND APPLICATIONS XXXII, PTS 1AND 2 Vol. 6206. doi:10.1117/12.667232

    DOI: 10.1117/12.667232

    Dielectric function of degenerate InSb: Beyond the hydrodynamic model (Journal article)

    Bell, G. R., Veal, T. D., Frost, J. A., & McConville, C. F. (2006). Dielectric function of degenerate InSb: Beyond the hydrodynamic model. PHYSICAL REVIEW B, 73(15). doi:10.1103/PhysRevB.73.153302

    DOI: 10.1103/PhysRevB.73.153302

    Inversion and accumulation layers at InN surfaces (Journal article)

    Veal, T. D., Piper, L. F. J., Schaff, W. J., & McConville, C. F. (2006). Inversion and accumulation layers at InN surfaces. JOURNAL OF CRYSTAL GROWTH, 288(2), 268-272. doi:10.1016/j.jcrysgro.2005.12.100

    DOI: 10.1016/j.jcrysgro.2005.12.100

    Scanning tunnelling spectroscopy of quantized electron accumulation at InxGa1-xN surfaces (Journal article)

    Veal, T. D., Piper, L. F. J., Phillips, M. R., Zareie, M. H., Lu, H., Schaff, W. J., & McConville, C. F. (2006). Scanning tunnelling spectroscopy of quantized electron accumulation at InxGa1-xN surfaces. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 203(1), 85-92. doi:10.1002/pssa.200563522

    DOI: 10.1002/pssa.200563522

    2005

    Valence-band structure of InN from x-ray photoemission spectroscopy (Journal article)

    Piper, L. F. J., Veal, T. D., Jefferson, P. H., McConville, C. F., Fuchs, F., Furthmuller, J., . . . Schaff, W. J. (2005). Valence-band structure of InN from x-ray photoemission spectroscopy. PHYSICAL REVIEW B, 72(24). doi:10.1103/PhysRevB.72.245319

    DOI: 10.1103/PhysRevB.72.245319

    Electron accumulation at InN/AlN and InN/GaN interfaces (Conference Paper)

    Veal, T. D., Piper, L. F. J., Mahboob, I., Lu, H., Schaff, W. J., & McConville, C. F. (2005). Electron accumulation at InN/AlN and InN/GaN interfaces. In PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7 Vol. 2 (pp. 2246-2249). doi:10.1002/pssc.200461418

    DOI: 10.1002/pssc.200461418

    InN{0001} polarity by ion scattering spectroscopy (Conference Paper)

    Walker, M., Veal, T. D., Lu, H., Schaff, W. J., & McConville, C. F. (2005). InN{0001} polarity by ion scattering spectroscopy. In Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7 Vol. 2 (pp. 2301-2304). doi:10.1002/pssc.200461290

    DOI: 10.1002/pssc.200461290

    Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys (Journal article)

    Veal, T. D., Piper, L. F. J., Jefferson, P. H., Mahboob, I., McConville, C. F., Merrick, M., . . . Hopkinson, M. (2005). Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys. APPLIED PHYSICS LETTERS, 87(18). doi:10.1063/1.2126117

    DOI: 10.1063/1.2126117

    Band gap reduction in GaNSb alloys due to the anion mismatch (Journal article)

    Veal, T. D., Piper, L. F. J., Jollands, S., Bennett, B. R., Jefferson, P. H., Thomas, P. A., . . . Ashley, T. (2005). Band gap reduction in GaNSb alloys due to the anion mismatch. APPLIED PHYSICS LETTERS, 87(13). doi:10.1063/1.2058224

    DOI: 10.1063/1.2058224

    Clean wurtzite InN surfaces prepared with atomic hydrogen (Journal article)

    Piper, L. F. J., Veal, T. D., Walker, M., Mahboob, I., McConville, C. F., Lu, H., & Schaff, W. J. (2005). Clean wurtzite InN surfaces prepared with atomic hydrogen. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 23(4), 617-620. doi:10.1116/1.1927108

    DOI: 10.1116/1.1927108

    Photoelectron spectroscopy study of Ga1-xMnxAs(001) surface oxide and low temperature cleaning (Journal article)

    Hatfield, S. A., Veal, T. D., McConville, C. F., Bell, G. R., Edmonds, K. W., Campion, R. P., . . . Gallagher, B. L. (2005). Photoelectron spectroscopy study of Ga1-xMnxAs(001) surface oxide and low temperature cleaning. SURFACE SCIENCE, 585(1-2), 66-74. doi:10.1016/j.susc.2005.04.012

    DOI: 10.1016/j.susc.2005.04.012

    Growth of dilute GaNSb by plasma-assisted MBE (Journal article)

    Buckle, L., Bennett, B. R., Jollands, S., Veal, T. D., Wilson, N. R., Murdin, B. N., . . . Ashley, T. (2005). Growth of dilute GaNSb by plasma-assisted MBE. JOURNAL OF CRYSTAL GROWTH, 278(1-4), 188-192. doi:10.1016/j.jcrysgro.2004.12.148

    DOI: 10.1016/j.jcrysgro.2004.12.148

    2004

    Low-energy nitrogen ion implantation of InSb (Journal article)

    Mahboob, I., Veal, T. D., & McConville, C. F. (2004). Low-energy nitrogen ion implantation of InSb. JOURNAL OF APPLIED PHYSICS, 96(9), 4935-4938. doi:10.1063/1.1792390

    DOI: 10.1063/1.1792390

    Core-level photoemission spectroscopy of nitrogen bonding in GaNxAs1-x alloys (Journal article)

    Veal, T. D., Mahboob, I., Piper, L. F. J., McConville, C. F., & Hopkinson, M. (2004). Core-level photoemission spectroscopy of nitrogen bonding in GaNxAs1-x alloys. APPLIED PHYSICS LETTERS, 85(9), 1550-1552. doi:10.1063/1.1784886

    DOI: 10.1063/1.1784886

    Electron spectroscopy of dilute nitrides (Journal article)

    Veal, T. D., Mahboob, I., Piper, L. F. J., Ashley, T., Hopkinson, M., & McConville, C. F. (2004). Electron spectroscopy of dilute nitrides. JOURNAL OF PHYSICS-CONDENSED MATTER, 16(31), S3201-S3214. doi:10.1088/0953-8984/16/31/015

    DOI: 10.1088/0953-8984/16/31/015

    Indium nitride: Evidence of electron accumulation (Journal article)

    Veal, T. D., Mahboob, I., Piper, L. F. J., McConville, C. F., Lu, H., & Schaff, W. J. (2004). Indium nitride: Evidence of electron accumulation. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 22(4), 2175-2178. doi:10.1116/1.1771672

    DOI: 10.1116/1.1771672

    Fuchs-Kliewer phonon excitations in GaNAs alloys (Journal article)

    Veal, T. D., Mahboob, I., Piper, L. F. J., McConville, C. F., & Hopkinson, M. (2004). Fuchs-Kliewer phonon excitations in GaNAs alloys. JOURNAL OF APPLIED PHYSICS, 95(12), 8466-8468. doi:10.1063/1.1737058

    DOI: 10.1063/1.1737058

    Origin of electron accumulation at wurtzite InN surfaces (Journal article)

    Mahboob, I., Veal, T. D., Piper, L. F. J., McConville, C. F., Lu, H., Schaff, W. J., . . . Bechstedt, F. (2004). Origin of electron accumulation at wurtzite InN surfaces. PHYSICAL REVIEW B, 69(20). doi:10.1103/PhysRevB.69.201307

    DOI: 10.1103/PhysRevB.69.201307

    Negative band gaps in dilute InNxSb1-x alloys (Journal article)

    Veal, T. D., Mahboob, I., & McConville, C. F. (2004). Negative band gaps in dilute InNxSb1-x alloys. PHYSICAL REVIEW LETTERS, 92(13). doi:10.1103/PhysRevLett.92.136801

    DOI: 10.1103/PhysRevLett.92.136801

    Intrinsic electron accumulation at clean InN surfaces (Journal article)

    Mahboob, I., Veal, T. D., McConville, C. F., Lu, H., & Schaff, W. J. (2004). Intrinsic electron accumulation at clean InN surfaces. PHYSICAL REVIEW LETTERS, 92(3). doi:10.1103/PhysRevLett.92.036804

    DOI: 10.1103/PhysRevLett.92.036804

    Temperature invariance of InN electron accumulation (Journal article)

    Piper, L. F. J., Veal, T. D., Mahboob, I., McConville, C. F., Lu, H., & Schaff, W. J. (2004). Temperature invariance of InN electron accumulation. PHYSICAL REVIEW B, 70(11). doi:10.1103/PhysRevB.70.115333

    DOI: 10.1103/PhysRevB.70.115333

    2003

    Sulphur-induced electron accumulation on InAs: a comparison of the (001) and (111)B surfaces (Journal article)

    Lowe, M. J., Veal, T. D., Mowbray, A. P., & McConville, C. F. (2003). Sulphur-induced electron accumulation on InAs: a comparison of the (001) and (111)B surfaces. SURFACE SCIENCE, 544(2-3), 320-328. doi:10.1016/j.susc.2003.08.047

    DOI: 10.1016/j.susc.2003.08.047

    Electron dynamics in InNxSb1-x (Journal article)

    Mahboob, I., Veal, T. D., & McConville, C. F. (2003). Electron dynamics in InNxSb1-x. APPLIED PHYSICS LETTERS, 83(11), 2169-2171. doi:10.1063/1.1611270

    DOI: 10.1063/1.1611270

    Effect of hydrogen in dilute InNxSb1-x alloys grown by molecular beam epitaxy (Journal article)

    Veal, T. D., Mahboob, I., McConville, C. F., Burke, T. M., & Ashley, T. (2003). Effect of hydrogen in dilute InNxSb1-x alloys grown by molecular beam epitaxy. APPLIED PHYSICS LETTERS, 83(9), 1776-1778. doi:10.1063/1.1604463

    DOI: 10.1063/1.1604463

    Determination of the substitutional nitrogen content and the electron effective mass in InNxSb1-x (001) epitaxial layers (Journal article)

    Mahboob, I., Veal, T. D., & McConville, C. F. (2003). Determination of the substitutional nitrogen content and the electron effective mass in InNxSb1-x (001) epitaxial layers. IEE PROCEEDINGS-OPTOELECTRONICS, 150(1), 102-104. doi:10.1049/ip-opt:20030045

    DOI: 10.1049/ip-opt:20030045

    Passivation and reconstruction-dependent electron accumulation at sulphur treated InAs(001) surfaces (Journal article)

    Lowe, M. J., Veal, T. D., McConville, C. F., Bell, G. R., Tsukamoto, S., & Koguchi, N. (2003). Passivation and reconstruction-dependent electron accumulation at sulphur treated InAs(001) surfaces. SURFACE SCIENCE, 523(1-2), 179-188. doi:10.1016/S0039-6028(02)02416-0

    DOI: 10.1016/S0039-6028(02)02416-0

    2002

    Plasmon damping in molecular beam epitaxial-grown InAs(100) (Journal article)

    Veal, T. D., Bell, G. R., & McConville, C. F. (2002). Plasmon damping in molecular beam epitaxial-grown InAs(100). JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 20(4), 1766-1770. doi:10.1116/1.1491541

    DOI: 10.1116/1.1491541

    HREELS and photoemission study of GaSb(100)-(1 x 3) surfaces prepared by optimal atomic hydrogen cleaning (Journal article)

    Veal, T. D., Lowe, M. J., & McConville, C. F. (2002). HREELS and photoemission study of GaSb(100)-(1 x 3) surfaces prepared by optimal atomic hydrogen cleaning. SURFACE SCIENCE, 499(2-3), 251-260. doi:10.1016/S0039-6028(01)01856-8

    DOI: 10.1016/S0039-6028(01)01856-8

    Extreme band bending at MBE-grown InAs(001) surfaces induced by in situ sulphur passivation (Journal article)

    Lowe, M. J., Veal, T. D., McConville, C. F., Bell, G. R., Tsukamoto, S., & Koguchi, N. (2002). Extreme band bending at MBE-grown InAs(001) surfaces induced by in situ sulphur passivation. JOURNAL OF CRYSTAL GROWTH, 237, 196-200. doi:10.1016/S0022-0248(01)01899-1

    DOI: 10.1016/S0022-0248(01)01899-1

    2001

    Profiling of electron accumulation layers in the near-surface region of InAs (110) (Journal article)

    Veal, T. D., & McConville, C. F. (2001). Profiling of electron accumulation layers in the near-surface region of InAs (110). PHYSICAL REVIEW B, 64(8). doi:10.1103/PhysRevB.64.085311

    DOI: 10.1103/PhysRevB.64.085311

    Profiling of electron accumulation layers in the near-surface region of InAs (110) (Journal article)

    Veal, T. D., & McConville, C. F. (2001). Profiling of electron accumulation layers in the near-surface region of InAs (110). PHYSICAL REVIEW B, 6408(8), art. no.-085311.

    2000

    Temperature-dependent two-dimensional plasmons at clean and hydrogenated Ge(001) surfaces (Journal article)

    Eggeling, J., Bell, G. R., Jones, T. S., Veal, T. D., & McConville, C. F. (2000). Temperature-dependent two-dimensional plasmons at clean and hydrogenated Ge(001) surfaces. PHYSICAL REVIEW B, 62(11), 7330-7335. doi:10.1103/PhysRevB.62.7330

    DOI: 10.1103/PhysRevB.62.7330

    Controlled oxide removal for the preparation of damage-free InAs(110) surfaces (Journal article)

    Veal, T. D., & McConville, C. F. (2000). Controlled oxide removal for the preparation of damage-free InAs(110) surfaces. APPLIED PHYSICS LETTERS, 77(11), 1665-1667. doi:10.1063/1.1310211

    DOI: 10.1063/1.1310211