Photo of Dr Ivona Mitrovic

Dr Ivona Mitrovic PhD, MSc, BSc EE

Reader Electrical Engineering and Electronics

    Publications

    Selected Publications

    1. Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature (Journal article - 2014)
    2. Analysis of electron capture at oxide traps by electric field injection (Journal article - 2013)
    3. On the nature of the interfacial layer in ultra-thin TiN/LaLuO3 gate stacks (Journal article - 2012)
    4. Tunnel-Barrier Rectifiers for Optical Nantennas (Journal article - 2016)
    5. Atomic-layer deposited thulium oxide as a passivation layer on germanium (Journal article - 2015)

    2021

    Oxides for Rectenna Technology (Journal article)

    Mitrovic, I. Z., Almalki, S., Tekin, S. B., Sedghi, N., Chalker, P. R., & Hall, S. (n.d.). Oxides for Rectenna Technology. Materials, 14(18), 5218. doi:10.3390/ma14185218

    DOI: 10.3390/ma14185218

    Low ON-State Resistance Normally-OFF AlGaN/GaN MIS-HEMTs With Partially Recessed Gate and ZrOx Charge Trapping Layer (Journal article)

    Cai, Y., Zhang, Y., Liang, Y., Mitrovic, I. Z., Wen, H., Liu, W., & Zhao, C. (2021). Low ON-State Resistance Normally-OFF AlGaN/GaN MIS-HEMTs With Partially Recessed Gate and ZrOx Charge Trapping Layer. IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(9), 4310-4316. doi:10.1109/TED.2021.3100002

    DOI: 10.1109/TED.2021.3100002

    Bio-Inspired Photoelectric Artificial Synapse based on Two-Dimensional Ti3C2Tx MXenes Floating Gate (Journal article)

    Zhao, T., Zhao, C., Xu, W., Liu, Y., Gao, H., Mitrovic, I. Z., . . . Zhao, C. Z. (2021). Bio-Inspired Photoelectric Artificial Synapse based on Two-Dimensional Ti3C2Tx MXenes Floating Gate. ADVANCED FUNCTIONAL MATERIALS. doi:10.1002/adfm.202106000

    DOI: 10.1002/adfm.202106000

    Impact of AlOy Interfacial Layer on Resistive Switching Performance of Flexible HfOx/AlOy ReRAMs (Journal article)

    Biswas, S., Paul, A. D., Das, P., Tiwary, P., Edwards, H. J., Dhanak, V. R., . . . Mahapatra, R. (2021). Impact of AlOy Interfacial Layer on Resistive Switching Performance of Flexible HfOx/AlOy ReRAMs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(8), 3787-3793. doi:10.1109/TED.2021.3084554

    DOI: 10.1109/ted.2021.3084554

    Monolithic Comparator and Sawtooth Generator of AlGaN/GaN MIS-HEMTs With Threshold Voltage Modulation for High-Temperature Applications (Journal article)

    Li, A., Cui, M., Shen, Y., Li, Z., Liu, W., Mitrovic, I. Z., . . . Zhao, C. (2021). Monolithic Comparator and Sawtooth Generator of AlGaN/GaN MIS-HEMTs With Threshold Voltage Modulation for High-Temperature Applications. IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(6), 2673-2679. doi:10.1109/TED.2021.3075425

    DOI: 10.1109/ted.2021.3075425

    Single and Triple Insulator Metal-Insulator-Metal Diodes for Infrared Rectennas (Journal article)

    Tekin, S., Das, P., Weerakkody, A. D., Sedghi, N., Hall, S., Mitrovic, I. Z., . . . Chalker, P. R. (2021). Single and Triple Insulator Metal-Insulator-Metal Diodes for Infrared Rectennas. Solid-State Electronics. doi:10.1016/j.sse.2021.108096

    DOI: 10.1016/j.sse.2021.108096

    Ecofriendly Solution-Combustion-Processed Thin-Film Transistors for Synaptic Emulation and Neuromorphic Computing. (Journal article)

    Liu, Q., Zhao, C., Zhao, T., Liu, Y., Mitrovic, I. Z., Xu, W., . . . Zhao, C. Z. (2021). Ecofriendly Solution-Combustion-Processed Thin-Film Transistors for Synaptic Emulation and Neuromorphic Computing.. ACS applied materials & interfaces. doi:10.1021/acsami.0c20947

    DOI: 10.1021/acsami.0c20947

    Improved pseudocapacitances of supercapacitors based on electrodes of nitrogen-doped Ti3C2Tx nanosheets with in-situ growth of carbon nanotubes (Journal article)

    Sun, Y., Yi, R., Zhao, Y., Liu, C., Yuan, Y., Geng, X., . . . Zhao, C. (2021). Improved pseudocapacitances of supercapacitors based on electrodes of nitrogen-doped Ti3C2Tx nanosheets with in-situ growth of carbon nanotubes. Journal of Alloys and Compounds, 158347. doi:10.1016/j.jallcom.2020.158347

    DOI: 10.1016/j.jallcom.2020.158347

    Artificial Synaptic Performance with Learning Behavior for Memristor Fabricated with Stacked Solution-Processed Switching Layers (Journal article)

    Shen, Z., Zhao, C., Zhao, T., Xu, W., Liu, Y., Qi, Y., . . . Zhao, C. Z. (2021). Artificial Synaptic Performance with Learning Behavior for Memristor Fabricated with Stacked Solution-Processed Switching Layers. ACS Applied Electronic Materials, 3(3), 1288-1300. doi:10.1021/acsaelm.0c01094

    DOI: 10.1021/acsaelm.0c01094

    A high conductive TiC–TiO2/SWCNT/S composite with effective polysulfides adsorption for high performance Li–S batteries (Journal article)

    Geng, X., Yi, R., Lin, X., Liu, C., Sun, Y., Zhao, Y., . . . Zhao, C. (2021). A high conductive TiC–TiO2/SWCNT/S composite with effective polysulfides adsorption for high performance Li–S batteries. Journal of Alloys and Compounds, 851, 156793. doi:10.1016/j.jallcom.2020.156793

    DOI: 10.1016/j.jallcom.2020.156793

    2020

    Enhanced electrochemical performance by GeOx-Coated MXene nanosheet anode in lithium-ion batteries (Journal article)

    Liu, C., Zhao, Y., Yi, R., Wu, H., Yang, W., Li, Y., . . . Zhao, C. (2020). Enhanced electrochemical performance by GeOx-Coated MXene nanosheet anode in lithium-ion batteries. Electrochimica Acta, 358. doi:10.1016/j.electacta.2020.136923

    DOI: 10.1016/j.electacta.2020.136923

    Suppression of Surface Leakage Currents in InAs Avalanche Photodiodes via Sputtering of High-k Dielectric Layers (Journal article)

    Cao, Z., Mitrovic, I. Z., & Sandall, I. (2020). Suppression of Surface Leakage Currents in InAs Avalanche Photodiodes via Sputtering of High-k Dielectric Layers. IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(10), 4269-4273. doi:10.1109/TED.2020.3012122

    DOI: 10.1109/TED.2020.3012122

    Resistive Switching Performance of RRAM Device with Stacked Solution-based Dielectric Layers (Conference Paper)

    Shen, Z., Zhao, C., Mitrovic, I. Z., Zhao, C., & Yang, L. (2020). Resistive Switching Performance of RRAM Device with Stacked Solution-based Dielectric Layers. In 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). IEEE. doi:10.1109/eurosoi-ulis49407.2020.9365382

    DOI: 10.1109/eurosoi-ulis49407.2020.9365382

    Single and Triple Insulator Tunnel Rectifiers for Infrared Energy Harvesting (Conference Paper)

    Tekin, S. B., Das, P., Weerakkody, A. D., Sedghi, N., Hall, S., Mitrovic, I. Z., . . . Wrench, J. S. (2020). Single and Triple Insulator Tunnel Rectifiers for Infrared Energy Harvesting. In 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). IEEE. doi:10.1109/eurosoi-ulis49407.2020.9365388

    DOI: 10.1109/eurosoi-ulis49407.2020.9365388

    Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application (Journal article)

    Shen, Z., Zhao, C., Qi, Y., Xu, W., Liu, Y., Mitrovic, I. Z., . . . Zhao, C. (2020). Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application. NANOMATERIALS, 10(8). doi:10.3390/nano10081437

    DOI: 10.3390/nano10081437

    Comproportionation Reaction Synthesis to Realize High-Performance Water-Induced Metal-Oxide Thin-Film Transistors (Journal article)

    Liu, Q., Zhao, C., Mitrovic, I. Z., Xu, W., Yang, L., & Zhao, C. Z. (2020). Comproportionation Reaction Synthesis to Realize High-Performance Water-Induced Metal-Oxide Thin-Film Transistors. Advanced Electronic Materials, 2000072. doi:10.1002/aelm.202000072

    DOI: 10.1002/aelm.202000072

    Enhancement on the performance of eco-friendly solution-processed InO/AlO thin-film transistors via lithium incorporation (Journal article)

    Zhao, T., Zhao, C., Zhang, J., Mitrovic, I. Z., Lim, E. G., Yang, L., . . . Zhao, C. (2020). Enhancement on the performance of eco-friendly solution-processed InO/AlO thin-film transistors via lithium incorporation. Journal of Alloys and Compounds, 829. doi:10.1016/j.jallcom.2020.154458

    DOI: 10.1016/j.jallcom.2020.154458

    Facile Route for Low-temperature Eco-friendly Solution Processed ZnSnO Thin-film Transistors (Conference Paper)

    Zhao, T., Zhao, C., Mitrovic, I. Z., Gee Lim, E., Yang, L., Qiu, C., & Zhao, C. Z. (2020). Facile Route for Low-temperature Eco-friendly Solution Processed ZnSnO Thin-film Transistors. In 2020 IEEE International Reliability Physics Symposium (IRPS). IEEE. doi:10.1109/irps45951.2020.9128329

    DOI: 10.1109/irps45951.2020.9128329

    Facile preparation of Co3O4 nanoparticles incorporating with highly conductive MXene nanosheets as high-performance anodes for lithium-ion batteries (Journal article)

    Zhao, Y., Liu, C., Yi, R., Li, Z., Chen, Y., Li, Y., . . . Zhao, C. (2020). Facile preparation of Co3O4 nanoparticles incorporating with highly conductive MXene nanosheets as high-performance anodes for lithium-ion batteries. Electrochimica Acta, 345, 136203. doi:10.1016/j.electacta.2020.136203

    DOI: 10.1016/j.electacta.2020.136203

    Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature (Journal article)

    Qi, Y. F., Shen, Z. J., Zhao, C., Mitrovic, I. Z., Xu, W. Y., Lim, E. G., . . . Zhao, C. Z. (2020). Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature. SOLID-STATE ELECTRONICS, 168. doi:10.1016/j.sse.2019.107735

    DOI: 10.1016/j.sse.2019.107735

    Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices (Journal article)

    Cai, Y., Wang, Y., Liang, Y., Zhang, Y., Liu, W., Wen, H., . . . Zhao, C. (2020). Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices. IEEE Access, 8, 95642-95649. doi:10.1109/access.2020.2995906

    DOI: 10.1109/access.2020.2995906

    (Invited) Band Line-up of High-k Oxides on GaN (Journal article)

    Mitrovic, I. Z., Das, P., Jones, L., Gibbon, J., Dhanak, V. R., Mahapatra, R., . . . Thayne, I. G. (n.d.). (Invited) Band Line-up of High-k Oxides on GaN. ECS Transactions, 97(1), 67-81. doi:10.1149/09701.0067ecst

    DOI: 10.1149/09701.0067ecst

    Memristive Non-Volatile Memory Based on Graphene Materials (Journal article)

    Shen, Z., Zhao, C., Qi, Y., Mitrovic, I. Z., Yang, L., Wen, J., . . . Zhao, C. (2020). Memristive Non-Volatile Memory Based on Graphene Materials. MICROMACHINES, 11(4). doi:10.3390/mi11040341

    DOI: 10.3390/mi11040341

    Effect of surface treatment on electrical properties of GaN metal-insulator-semiconductor devices with Al2O3 gate dielectric (Journal article)

    Cai, Y., Liu, W., Cui, M., Sun, R., Liang, Y. C., Wen, H., . . . Zhao, C. (2020). Effect of surface treatment on electrical properties of GaN metal-insulator-semiconductor devices with Al2O3 gate dielectric. JAPANESE JOURNAL OF APPLIED PHYSICS, 59(4). doi:10.35848/1347-4065/ab7863

    DOI: 10.35848/1347-4065/ab7863

    Band alignments of sputtered dielectrics on GaN (Journal article)

    Supardan, S. N., Das, P., Major, J. D., Hannah, A., Zaidi, Z. H., Mahapatra, R., . . . Mitrovic, I. Z. (2020). Band alignments of sputtered dielectrics on GaN. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53(7). doi:10.1088/1361-6463/ab5995

    DOI: 10.1088/1361-6463/ab5995

    Band Line-up Investigation of Atomic Layer Deposited TiAlO and GaAlO on GaN (Journal article)

    Das, P., Jones, L. A. H., Gibbon, J. T., Dhanak, V. R., Partida-Manzanera, T., Roberts, J. W., . . . Mitrovic, I. Z. (2020). Band Line-up Investigation of Atomic Layer Deposited TiAlO and GaAlO on GaN. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 9(6). doi:10.1149/2162-8777/aba4f4

    DOI: 10.1149/2162-8777/aba4f4

    IEEE Access Special Section: Emerging Technologies for Energy Internet (Journal article)

    Wen, H., Liang, Y. C., Mitrovic, I. Z., Li, D., Tayahi, M., Lu, F., & Ye, X. (2020). IEEE Access Special Section: Emerging Technologies for Energy Internet. IEEE Access, 8, 213340-213344. doi:10.1109/access.2020.3040490

    DOI: 10.1109/access.2020.3040490

    2019

    Aqueous solution-processed AlOx dielectrics and their biased radiation response investigated by an on-site technique (Journal article)

    Fang, Y., Zhao, C., Hall, S., Mitrovic, I. Z., Xu, W., Yang, L., . . . Zhao, C. (2019). Aqueous solution-processed AlOx dielectrics and their biased radiation response investigated by an on-site technique. Radiation Physics and Chemistry. doi:10.1016/j.radphyschem.2019.108644

    DOI: 10.1016/j.radphyschem.2019.108644

    3D-structured multi-walled carbon nanotubes/copper nanowires composite as a porous current collector for the enhanced silicon-based anode (Journal article)

    Zhao, Y., Liu, C., Sun, Y., Yi, R., Cai, Y., Li, Y., . . . Zhao, C. (2019). 3D-structured multi-walled carbon nanotubes/copper nanowires composite as a porous current collector for the enhanced silicon-based anode. JOURNAL OF ALLOYS AND COMPOUNDS, 803, 505-513. doi:10.1016/j.jallcom.2019.06.302

    DOI: 10.1016/j.jallcom.2019.06.302

    Bias-stress stability and radiation response of solution-processed AlOx dielectrics investigated by on-site measurements (Conference Paper)

    Fang, Y. X., Zhao, C., Mitrovic, I. Z., Hall, S., Yang, L., & Zhao, C. Z. (2019). Bias-stress stability and radiation response of solution-processed AlOx dielectrics investigated by on-site measurements. In MICROELECTRONIC ENGINEERING Vol. 217. doi:10.1016/j.mee.2019.111113

    DOI: 10.1016/j.mee.2019.111113

    Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric (Journal article)

    Shen, Z., Qi, Y., Mitrovic, I. Z., Zhao, C., Hall, S., Yang, L., . . . Zhao, C. (2019). Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric. MICROMACHINES, 10(7). doi:10.3390/mi10070446

    DOI: 10.3390/mi10070446

    Characteristics of Ni/AlOx/Pt RRAM devices with various dielectric fabrication temperatures (Conference Paper)

    Shen, Z. J., Zhao, C., Zhao, C. Z., Mitrovic, I. Z., Yang, L., Xu, W. Y., . . . IEEE. (2019). Characteristics of Ni/AlOx/Pt RRAM devices with various dielectric fabrication temperatures. In 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019). Retrieved from http://gateway.webofknowledge.com/

    Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices (Conference Paper)

    Cai, Y., Wang, Y., Cui, M., Liu, W., Wen, H., Zhao, C., . . . IEEE. (2019). Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices. In 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019). Retrieved from http://gateway.webofknowledge.com/

    Enhanced Biased Radiation and Illumination Stress Stability of Solution-processed AlOx Dielectrics using Hydrogen Peroxide (Conference Paper)

    Fang, Y. X., Zhao, T. S., Zhao, C., Zhao, C. Z., Mitrovic, I. Z., Yang, L., & IEEE. (2019). Enhanced Biased Radiation and Illumination Stress Stability of Solution-processed AlOx Dielectrics using Hydrogen Peroxide. In 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019). Retrieved from http://gateway.webofknowledge.com/

    Plasma-Enhanced Combustion-Processed Al2O3 Gate Oxide for In2O3 Thin Film Transistors (Conference Paper)

    Liu, Q. H., Zhao, C., Zhao, C. Z., Mitrovic, I. Z., Hall, S., Xu, W. Y., . . . IEEE. (2019). Plasma-Enhanced Combustion-Processed Al2O3 Gate Oxide for In2O3 Thin Film Transistors. In 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019). Retrieved from http://gateway.webofknowledge.com/

    Solution Processed ZnSnO Thin-film Transistors with Peroxide-Aluminum Oxide Dielectric (Conference Paper)

    Zhao, T. S., Zhao, C., Zhao, C. Z., Xu, W. Y., Yang, L., Mitrovic, I. Z., . . . IEEE. (2019). Solution Processed ZnSnO Thin-film Transistors with Peroxide-Aluminum Oxide Dielectric. In 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019). Retrieved from http://gateway.webofknowledge.com/

    The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters (Conference Paper)

    Cui, M., Cai, Y., Bu, Q., Liu, W., Wen, H., Mitrovic, I. Z., . . . IEEE. (2019). The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters. In 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019). Retrieved from http://gateway.webofknowledge.com/

    Alloyed Cu/Si core-shell nanoflowers on the three-dimensional graphene foam as an anode for lithium-ion batteries (Journal article)

    Liu, C., Zhao, Y., Yi, R., Sun, Y., Li, Y., Yang, L., . . . Zhao, C. (2019). Alloyed Cu/Si core-shell nanoflowers on the three-dimensional graphene foam as an anode for lithium-ion batteries. ELECTROCHIMICA ACTA, 306, 45-53. doi:10.1016/j.electacta.2019.03.071

    DOI: 10.1016/j.electacta.2019.03.071

    AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HFETs Based DC-DC Boost Converters with Integrated Gate Drivers (Conference Paper)

    Cui, M., Bu, Q., Cai, Y., Sun, R., Liu, W., Wen, H., . . . IEEE. (2019). AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HFETs Based DC-DC Boost Converters with Integrated Gate Drivers. In 2019 10TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND ECCE ASIA (ICPE 2019 - ECCE ASIA). Retrieved from http://gateway.webofknowledge.com/

    Monolithic Integration Design of GaN-based Power Chip Including Gate Driver for High-Temperature DC-DC Converters (Journal article)

    Cui, M., Bu, Q., Cai, Y., Sun, R., Liu, W., Wen, H., . . . Zhao, C. (n.d.). Monolithic Integration Design of GaN-based Power Chip Including Gate Driver for High-Temperature DC-DC Converters. Japanese Journal of Applied Physics. doi:10.7567/1347-4065/ab1313

    DOI: 10.7567/1347-4065/ab1313

    Al/GO/Si/Al RRAM with Solution-processed GO dielectric at Low Fabrication Temperature (Conference Paper)

    Shen, Z. J., Zhao, C., Zhao, C. Z., Mitrovic, I. Z., Yang, L., Xu, W. Y., . . . IEEE. (2019). Al/GO/Si/Al RRAM with Solution-processed GO dielectric at Low Fabrication Temperature. In 2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS). Retrieved from http://gateway.webofknowledge.com/

    Eco-Friendly, Low-temperature Solution-processed InO/AlO Thin-film Transistor with Li-incorporation (Conference Paper)

    Zhao, T. S., Zhao, C., Zhao, C. Z., Xu, W. Y., Yang, L., Mitrovic, I. Z., . . . IEEE. (2019). Eco-Friendly, Low-temperature Solution-processed InO/AlO Thin-film Transistor with Li-incorporation. In 2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS). Retrieved from http://gateway.webofknowledge.com/

    Fully Solution-Processed Sodium Doped ZnO Thin-Film Transistors via a Low-Temperature Aqueous Route (Conference Paper)

    Liu, Q. H., Zhao, C., Zhao, C. Z., Mitrovic, I. Z., Hall, S., Xu, W. Y., . . . IEEE. (2019). Fully Solution-Processed Sodium Doped ZnO Thin-Film Transistors via a Low-Temperature Aqueous Route. In 2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS). Retrieved from http://gateway.webofknowledge.com/

    Improved Resistive Switching Behavior in Solution-processed AlOx based RRAM (Conference Paper)

    Qi, Y. F., Zhao, C. Z., Zhao, C., Mitrovic, I. Z., Xu, W. Y., Yang, L., . . . IEEE. (2019). Improved Resistive Switching Behavior in Solution-processed AlOx based RRAM. In 2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS). Retrieved from http://gateway.webofknowledge.com/

    Set compliance current induced resistive memory characteristics of W/Hf/HfOx/TiN devices (Journal article)

    Maji, S., Samanta, S., Das, P., Maikap, S., Dhanak, V. R., Mitrovic, I. Z., & Mahapatra, R. (2019). Set compliance current induced resistive memory characteristics of W/Hf/HfOx/TiN devices. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 37(2). doi:10.1116/1.5079574

    DOI: 10.1116/1.5079574

    2018

    Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs (Conference Paper)

    Cui, M., Cai, Y., Lam, S., Liu, W., Zhao, C., Mitrovic, I. Z., . . . Zhao, C. (2018). Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs. In 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC). IEEE. doi:10.1109/edssc.2018.8487160

    DOI: 10.1109/edssc.2018.8487160

    Band gap temperature-dependence and exciton-like state in copper antimony sulphide, CuSbS2 (Journal article)

    Birkett, M., Savory, C. N., Rajpalke, M. K., Linhart, W. M., Whittles, T. J., Gibbon, J. T., . . . Veal, T. D. (2018). Band gap temperature-dependence and exciton-like state in copper antimony sulphide, CuSbS2. APL Materials, 6(8). doi:10.1063/1.5030207

    DOI: 10.1063/1.5030207

    Investigation of Tm 2 O 3 As a Gate Dielectric for Ge MOS Devices (Conference Paper)

    Žurauskaite, L., Jones, L., Dhanak, V. R., Mitrovic, I. Z., Hellström, P. -E., & Östling, M. (2018). Investigation of Tm 2 O 3 As a Gate Dielectric for Ge MOS Devices. In SiGe, Ge, and Related Materials: Materials, Processing, and Devices 8 Vol. 87 (pp. 67-73). Cancun, Mexico.

    Investigation of Tm2O3 as a gate dielectric for Ge MOS devices (Journal article)

    Zurauskaite, L., Jones, L., Dhanak, V. R., Mitrovic, I. Z., Hellstrom, P. E., & Ostling, M. (2018). Investigation of Tm(2)O(3)( )as a Gate Dielectric for Ge MOS Devices. SIGE, GE, AND RELATED COMPOUNDS: MATERIALS, PROCESSING, AND DEVICES 8, 86(7), 67-73. doi:10.1149/08607.0067ecst

    DOI: 10.1149/08607.0067ecst

    Atomic layer deposition zinc oxide devices for transparent electronics (Thesis / Dissertation)

    Shaw, A. P., & Mitrovic, I. Z. (2018, June 25). Atomic layer deposition zinc oxide devices for transparent electronics.

    Band alignments at Ga2O3 heterojunction interfaces with Si and Ge (Journal article)

    Gibbon, J. T., Jones, L., Roberts, J. W., Althobaiti, M., Chalker, P. R., Mitrovic, I. Z., & Dhanak, V. R. (2018). Band alignments at Ga2O3 heterojunction interfaces with Si and Ge. AIP Advances, 8(6), 065011. doi:10.1063/1.5034459

    DOI: 10.1063/1.5034459

    Band alignments at Ga2O3 heterojunction interfaces with Si and Ge (Journal article)

    Gibbon, J. T., Jones, L., Roberts, J. W., Althobaiti, M., Chalker, P. R., Mitrovic, I. Z., & Dhanak, V. R. (2018). Band alignments at Ga2O3 heterojunction interfaces with Si and Ge. AIP ADVANCES, 8(6). doi:10.1063/1.5034459

    DOI: 10.1063/1.5034459

    A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density (Journal article)

    Jin, J., Zhang, J., Shaw, A., Kudina, V., Mitrovic, I., Wrench, J. S., . . . Hall, S. (2018). A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density. Journal of Physics D: Applied Physics, 51(6). doi:10.1088/1361-6463/aaa4a2

    DOI: 10.1088/1361-6463/aaa4a2

    Band alignment of sputtered Al2O3, MgO and ZrO2 on GaN for MIS-HEMTs (Conference Paper)

    Supardan, S. N., Das, P., Shaw, A. P., Major, J. D., Valizadeh, R., Hannah, A., . . . Mitrovic, I. Z. (2018). Band alignment of sputtered Al2O3, MgO and ZrO2 on GaN for MIS-HEMTs. In UK Nitrides Consortium (UKNC) Winter Conference. University of Manchester.

    Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures (Journal article)

    Mitrovic, I. Z., Weerakkody, D. A. D. C., Sedghi, N., Ralph, J. F., Hall, S., Dhanak, V. R., . . . Beeby, S. (2018). Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures. Applied Physics Letters, 112, 5 pages. doi:10.1063/1.4999258

    DOI: 10.1063/1.4999258

    2017

    Total Dose Effects and Bias Instabilities of (NH4)2S Passivated Ge MOS Capacitors with HfxZr1-xOy Thin Films (Journal article)

    Mu, Y., Fang, Y., Zhao, C. Z., Zhao, C., Lu, Q., Qi, Y., . . . Chalker, P. R. (2017). Total Dose Effects and Bias Instabilities of (NH4)(2)S Passivated Ge MOS Capacitors With HfxZr1-xOy Thin Films. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64(12), 2913-2921. doi:10.1109/TNS.2017.2768566

    DOI: 10.1109/TNS.2017.2768566

    Effects of biased irradiation on charge trapping in HfO2 dielectric thin films (Conference Paper)

    Mu, Y., Zhao, C. Z., Lu, Q., Zhao, C., Qi, Y., Lam, S., . . . Chalker, P. R. (2017). Effects of biased irradiation on charge trapping in HfO2 dielectric thin films. In AIP Conference Proceedings Vol. 1877. doi:10.1063/1.4999899

    DOI: 10.1063/1.4999899

    Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications (Conference Paper)

    Sawangsri, K., Das, P., Supardan, S. N., Mitrovic, I. Z., Hall, S., Mahapatra, R., . . . Chalker, P. R. (2017). Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications. In MICROELECTRONIC ENGINEERING Vol. 178 (pp. 178-181). doi:10.1016/j.mee.2017.04.010

    DOI: 10.1016/j.mee.2017.04.010

    Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements (Conference Paper)

    Shaw, A., Jin, J. D., Mitrovic, I. Z., Hall, S., Wrench, J. S., & Chalker, P. R. (2017). Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements. In MICROELECTRONIC ENGINEERING Vol. 178 (pp. 213-216). doi:10.1016/j.mee.2017.05.043

    DOI: 10.1016/j.mee.2017.05.043

    Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications (Journal article)

    Sawangsri, K., Das, P., Supardan, S. N., Mitrovic, I. Z., Hall, S., Mahapatra, R., . . . Chalker, P. R. (2017). Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications. Microelectronic Engineering, 178, 178-181. doi:10.1016/j.mee.2017.04.010

    DOI: 10.1016/j.mee.2017.04.010

    Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements (Journal article)

    Shaw, A., Jin, J. D., Mitrovic, I. Z., Hall, S., Wrench, J. S., & Chalker, P. R. (2017). Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements. Microelectronic Engineering, 178, 213-216. doi:10.1016/j.mee.2017.05.043

    DOI: 10.1016/j.mee.2017.05.043

    Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitride Cu3N (Journal article)

    Birkett, M., Savory, C. N., Fioretti, A. N., Thompson, P., Muryn, C. A., Weerakkody, A. D., . . . Veal, T. D. (2017). Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitride Cu3N. Physical Review B - Condensed Matter and Materials Physics, 95. doi:10.1103/PhysRevB.95.115201

    DOI: 10.1103/PhysRevB.95.115201

    Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition (Journal article)

    Jin, J., Wrench, J., Gibbon, J. T., Hesp, D., Shaw, A. P., Mitrovic, I. Z., . . . Hall, S. (2017). Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition. IEEE Transactions on Electron Devices, 64(3), 1225-1230. doi:10.1109/TED.2016.2647284

    DOI: 10.1109/TED.2016.2647284

    An insight of p-type to n-type conductivity conversion in oxygen ion-implanted ultrananocrystalline diamond films by impedance spectroscopy (Journal article)

    Xu, H., Ye, H., Coathup, D., Mitrovic, I. Z., Weerakkody, A. D., & Hu, X. (2017). An insight of p-type to n-type conductivity conversion in oxygen ion-implanted ultrananocrystalline diamond films by impedance spectroscopy. APPLIED PHYSICS LETTERS, 110(3). doi:10.1063/1.4974077

    DOI: 10.1063/1.4974077

    Barrier tuning of atomic layer deposited Ta2O5 and Al2O3 in double dielectric diodes (Journal article)

    Noureddine, I. N., Sedghi, N., Mitrovic, I. Z., & Hall, S. (2017). Barrier tuning of atomic layer deposited Ta2O5 and Al2O3 in double dielectric diodes. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 35(1). doi:10.1116/1.4974219

    DOI: 10.1116/1.4974219

    Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements (Journal article)

    Mu, Y., Zhao, C. Z., Lu, Q., Zhao, C., Qi, Y., Lam, S., . . . Chalker, P. R. (2017). Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64(1), 673-682. doi:10.1109/TNS.2016.2633549

    DOI: 10.1109/TNS.2016.2633549

    2016

    Atomic layer deposition of Nb-doped ZnO for thin film transistors (Journal article)

    Shaw, A., Wrench, J. S., Jin, J. D., Whittles, T. J., Mitrovic, I. Z., Raja, M., . . . Hall, S. (2016). Atomic layer deposition of Nb-doped ZnO for thin film transistors. APPLIED PHYSICS LETTERS, 109(22). doi:10.1063/1.4968194

    DOI: 10.1063/1.4968194

    ZnO MESFETS for application to Intelligent Windows (Journal article)

    Hall, S., Chalker, P. R., & Mitrovic, I. (2016). ZnO MESFETS for application to Intelligent Windows. Impact, 2016(2), 49-51. doi:10.21820/23987073.2016.2.49

    DOI: 10.21820/23987073.2016.2.49

    Effects of annealing conditions on resistive switching characteristics of SnOx thin films (Journal article)

    Jin, J., Zhang, J., Kemal, R. E., Luo, Y., Bao, P., Althobaiti, M., . . . Song, A. (2016). Effects of annealing conditions on resistive switching characteristics of SnOx thin films. JOURNAL OF ALLOYS AND COMPOUNDS, 673, 54-59. doi:10.1016/j.jallcom.2016.02.215

    DOI: 10.1016/j.jallcom.2016.02.215

    Engineered High-k Oxides (Thesis / Dissertation)

    Weerakkody, D. A. (2016, June 30). Engineered High-k Oxides.

    Barrier tuning of atomic layer deposited Ta2O5 and Al2O3 in resonant tunnelling diodes for terahertz applications (Conference Paper)

    Nemr Noureddine, I., Sedghi, N., Mitrovic, I. Z., & Hall, S. (2016). Barrier tuning of atomic layer deposited Ta2O5 and Al2O3 in resonant tunnelling diodes for terahertz applications. In 19th Workshop on Dielectrics in Microelectronics –WODIM. Catania, Italy.

    Structure of the interface in sub-nm EOT TmSiO/HfO2 gate stack (Conference Paper)

    Mitrovic, I. Z., Supardan, S. N., Hesp, D., Dhanak, V. R., Hall, S., Schamm-Chardon, S., . . . Ostling, M. (2016). Structure of the interface in sub-nm EOT TmSiO/HfO2 gate stack. In 19th Workshop on Dielectrics in Microelectronics –WODIM 2016. Catania, Italy.

    Tunnel-Barrier Rectifiers for Optical Nantennas (Journal article)

    Mitrovic, I. Z., Weerakkody, A. D., Sedghi, N., Hall, S., Ralph, J. F., Wrench, J. S., . . . Beeby, S. (2016). Tunnel-Barrier Rectifiers for Optical Nantennas. DIELECTRICS FOR NANOSYSTEMS 7: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 72(2), 287-299. doi:10.1149/07202.0287ecst

    DOI: 10.1149/07202.0287ecst

    Maximizing the optical performance of planar CH3NH3PbI3 hybrid perovskite heterojunction stacks (Journal article)

    Phillips, L. J., Rashed, A. M., Treharne, R. E., Kay, J., Yates, P., Mitrovic, I. Z., . . . Durose, K. (2016). Maximizing the optical performance of planar CH3NH3PbI3 hybrid perovskite heterojunction stacks. Solar Energy Materials and Solar Cells, 147, 327-333. doi:10.1016/j.solmat.2015.10.007

    DOI: 10.1016/j.solmat.2015.10.007

    Real-time and on-site gamma-ray radiation response testing system for semiconductor devices and its applications (Journal article)

    Mu, Y., Zhao, C. Z., Qi, Y., Lam, S., Zhao, C., Lu, Q., . . . Chalker, P. R. (2016). Real-time and on-site gamma-ray radiation response testing system for semiconductor devices and its applications. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 372, 14-28. doi:10.1016/j.nimb.2016.01.035

    DOI: 10.1016/j.nimb.2016.01.035

    Controlling the physical and electrical properties of ALD grown ZnO using Nb as a dopant (Conference Paper)

    Shaw, A., Jin, J. D., Mitrovic, I. Z., Hall, S., Wrench, J. S., Chalker, P. R., & IEEE. (2016). Controlling the physical and electrical properties of ALD grown ZnO using Nb as a dopant. In 2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2016) (pp. 28-31). Retrieved from http://gateway.webofknowledge.com/

    2015

    Electrical Properties and Interfacial Studies of HfxTi1-xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates (Journal article)

    Lu, Q., Mu, Y., Roberts, J. W., Althobaiti, M., Dhanak, V. R., Wu, J., . . . Chalker, P. R. (2015). Electrical Properties and Interfacial Studies of HfxTi1-xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates. MATERIALS, 8(12), 8169-8182. doi:10.3390/ma8125454

    DOI: 10.3390/ma8125454

    Dispersion relation data for methylammonium lead triiodide perovskite deposited on a (100) silicon wafer using a two-step vapour-phase reaction process. (Journal article)

    Phillips, L. J., Rashed, A. M., Treharne, R. E., Kay, J., Yates, P., Mitrovic, I. Z., . . . Durose, K. (2015). Dispersion relation data for methylammonium lead triiodide perovskite deposited on a (100) silicon wafer using a two-step vapour-phase reaction process.. Data in brief, 5, 926-928. doi:10.1016/j.dib.2015.10.026

    DOI: 10.1016/j.dib.2015.10.026

    Hafnia and alumina on sulphur passivated germanium (Poster)

    Althobaiti, M., Mather, S., Sedghi, N., Dhanak, V. R., Mitrovic, I. Z., Hall, S., & Chalker, P. R. (2015). Hafnia and alumina on sulphur passivated germanium. Poster session presented at the meeting of Unknown Conference. Retrieved from http://gateway.webofknowledge.com/

    DOI: 10.1016/j.vacuum.2015.03.017

    Hafnia and alumina on sulphur passivated germanium (Journal article)

    Althobaiti, M., Mather, S., Sedghi, N., Dhanak, V. R., Mitrovic, I. Z., Hall, S., & Chalker, P. R. (2015). Hafnia and alumina on sulphur passivated germanium. Vacuum, 122, 306-309. doi:10.1016/j.vacuum.2015.03.017

    DOI: 10.1016/j.vacuum.2015.03.017

    Physical and Electrical Characterization of Mg-Doped ZnO Thin-Film Transistors (Conference Paper)

    Shaw, A., Whittles, T. J., Mitrovic, I. Z., Jin, J. D., Wrench, J. S., Hesp, D., . . . Hall, S. (2015). Physical and Electrical Characterization of Mg-Doped ZnO Thin-Film Transistors. In ESSDERC 2015 PROCEEDINGS OF THE 45TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (pp. 206-209). Retrieved from http://gateway.webofknowledge.com/

    Enhanced low voltage nonlinearity in resonant tunneling metal-insulator-insulator-metal nanostructures (Journal article)

    Weerakkody, A. D., Sedghi, N., Mitrovic, I. Z., van Zalinge, H., Noureddine, I. N., Hall, S., . . . Durose, K. (2015). Enhanced low voltage nonlinearity in resonant tunneling metal-insulator-insulator-metal nanostructures. MICROELECTRONIC ENGINEERING, 147, 298-301. doi:10.1016/j.mee.2015.04.110

    DOI: 10.1016/j.mee.2015.04.110

    Band Alignment of Ta2O5 on Sulphur Passivated Germanium by X-ray Photoelectron Spectroscopy (Conference Paper)

    Althobaiti, M. G., Stoner, J., Dhanak, V. R., Potter, R. J., Mitrovic, I. Z., & IEEE. (2015). Band Alignment of Ta2O5 on Sulphur Passivated Germanium by X-ray Photoelectron Spectroscopy. In 2015 11TH CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME) (pp. 161-163). Retrieved from http://gateway.webofknowledge.com/

    Characterisation and Modelling of Mg Doped ZnO TFTs (Conference Paper)

    Shaw, A., Gao, C., Jin, J. D., Mitrovic, I. Z., Hall, S., & IEEE. (2015). Characterisation and Modelling of Mg Doped ZnO TFTs. In 2015 11TH CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME) (pp. 153-156). Retrieved from http://gateway.webofknowledge.com/

    Conduction mechanisms in Al-Ta2O5-Al2O3-Al rectifiers (Conference Paper)

    Weerakkody, A. D., Sedghi, N., Zhan, X., Mitrovic, I. Z., Hall, S., & IEEE. (2015). Conduction mechanisms in Al-Ta2O5-Al2O3-Al rectifiers. In 2015 11TH CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME) (pp. 133-136). Retrieved from http://gateway.webofknowledge.com/

    Atomic-layer deposited thulium oxide as a passivation layer on germanium (Journal article)

    Mitrovic, I. Z., Hall, S., Althobaiti, M., Hesp, D., Dhanak, V., Santoni, A., . . . Schamm-Chardon, S. (2015). Atomic-layer deposited thulium oxide as a passivation layer on germanium. Journal of Applied Physics, 117(21). doi:10.1063/1.4922121

    DOI: 10.1063/1.4922121

    Modelling of Mg doped ZnO TFTs (Conference Paper)

    Shaw, A., Chang, G., Jin, J., Mitrovic, I. Z., & Hall, S. (2015, June 29). Modelling of Mg doped ZnO TFTs. In 11th Conference on PhD Research in Microelectronics and Electronics (IEEE PRIME 2015). University of Glasgow, Glasgow, UK.

    Enhanced low voltage nonlinearity in resonant tunneling metal–insulator–insulator–metal nanostructures (Conference Paper)

    Weerakkody, A. D., Sedghi, N., Mitrovic, I. Z., van Zalinge, H., Nemr Noureddine, I., Hall, S., . . . Durose, K. (2015). Enhanced low voltage nonlinearity in resonant tunneling metal–insulator–insulator–metal nanostructures. In Microelectronic Engineering Vol. 147 (pp. 298-301). Elsevier BV. doi:10.1016/j.mee.2015.04.110

    DOI: 10.1016/j.mee.2015.04.110

    Engineered Ta2O5/Al2O3 and Nb2O5/Al2O3 tunnel barriers for next-generation low turn-on voltage high-speed rectifiers (Poster)

    Mitrovic, I., Sedghi, N., Weerakkody, D., Ralph, J. F., Hall, S., Wrench, J., & Chalker, P. R. (n.d.). Engineered Ta2O5/Al2O3 and Nb2O5/Al2O3 tunnel barriers for next-generation low turn-on voltage high-speed rectifiers. Poster session presented at the meeting of European Materials Research Society (EMRS 2015). Lille, France.

    2014

    Compositional tuning of atomic layer deposited MgZnO for thin film transistors (Journal article)

    Wrench, J. S., Brunell, I. F., Chalker, P. R., Jin, J. D., Shaw, A., Mitrovic, I. Z., & Hall, S. (2014). Compositional tuning of atomic layer deposited MgZnO for thin film transistors. APPLIED PHYSICS LETTERS, 105(20). doi:10.1063/1.4902389

    DOI: 10.1063/1.4902389

    Zero Bias Resonant Tunnelling Diode for Use in THz Rectenna (Presentation material)

    Sedghi, N., Mitrovic, I. Z., Ralph, J. F., & Hall, S. (2014). Zero Bias Resonant Tunnelling Diode for Use in THz Rectenna. Cork, Ireland.

    Physical and electrical characterization of Ce-HfO2 thin films deposited by thermal atomic layer deposition (Journal article)

    King, P. J., Sedghi, N., Hall, S., Mitrovic, I. Z., Chalker, P. R., Werner, M., & Hindley, S. (2014). Physical and electrical characterization of Ce-HfO2 thin films deposited by thermal atomic layer deposition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 32(3). doi:10.1116/1.4826174

    DOI: 10.1116/1.4826174

    Interface Engineering Routes for a Future CMOS Ge-based Technology (Journal article)

    Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Sedghi, N., Hall, S., Dhanak, V. R., . . . Ostling, M. (2014). Interface Engineering Routes for a Future CMOS Ge-based Technology. DIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 61(2), 73-88. doi:10.1149/06102.0073ecst

    DOI: 10.1149/06102.0073ecst

    Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature (Journal article)

    Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Dhanak, V. R., Linhart, W. M., Veal, T. D., . . . Dimoulas, A. (2014). Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature. Journal of Applied Physics, 115(11). doi:10.1063/1.4868091

    DOI: 10.1063/1.4868091

    'Hafnia on sulphur passivated germanium' (Conference Paper)

    Althobaiti, M., Mather, S., Sedghi, N., Dhanak, V. R., Mitrovic, I., Hall, S., & Chalker, P. (2014). 'Hafnia on sulphur passivated germanium'. In 13th European surface science Conference (pp. 1-2). Aveiro: EVC13.

    Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting (Chapter)

    Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting (2014). Springer International Publishing. doi:10.1007/978-3-319-08804-4

    DOI: 10.1007/978-3-319-08804-4

    Internal photoemission technique for high-k oxide/semiconductor band offset determination The influence of semiconductor bulk properties (Conference Paper)

    Engstrom, O., Przewlocki, H. M., Mitrovic, I. Z., & Hall, S. (2014). Internal photoemission technique for high-k oxide/semiconductor band offset determination The influence of semiconductor bulk properties. In PROCEEDINGS OF THE 2014 44TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2014) (pp. 369-372). Retrieved from http://gateway.webofknowledge.com/

    2013

    Radiation Response Analyzer of Semiconductor Dies (Conference Paper)

    Yifei, M., Cezhou, Z., Shengmao, S., Yue, Z., Mitrovic, I., Taylor, S., & Chalker, P. (2013). Radiation Response Analyzer of Semiconductor Dies. In PROCEEDINGS OF THE 2013 20TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2013) (pp. 682-685). Retrieved from http://gateway.webofknowledge.com/

    Interface engineering of Ge using thulium oxide: Band line-up study (Journal article)

    Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Sedghi, N., Hall, S., Dhanak, V. R., . . . Östling, M. (2013). Interface engineering of Ge using thulium oxide: Band line-up study. Microelectronic Engineering, 109, 204-207. doi:10.1016/j.mee.2013.03.160

    DOI: 10.1016/j.mee.2013.03.160

    Analysis of electron capture at oxide traps by electric field injection (Journal article)

    Engstrom, O., Sedghi, N., Mitrovic, I. Z., & Hall, S. (2013). Analysis of electron capture at oxide traps by electric field injection. APPLIED PHYSICS LETTERS, 102(21). doi:10.1063/1.4807845

    DOI: 10.1063/1.4807845

    Interface engineering of Ge using thulium oxide: Band line-up study (Conference Paper)

    Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Sedghi, N., Hall, S., Dhanak, V. R., . . . Ostling, M. (2013). Interface engineering of Ge using thulium oxide: Band line-up study. In MICROELECTRONIC ENGINEERING Vol. 109 (pp. 204-207). doi:10.1016/j.mee.2013.03.160

    DOI: 10.1016/j.mee.2013.03.160

    Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition (Journal article)

    Mather, S., Sedghi, N., Althobaiti, M., Mitrovic, I. Z., Dhanak, V., Chalker, P. R., & Hall, S. (2013). Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition. MICROELECTRONIC ENGINEERING, 109, 126-128. doi:10.1016/j.mee.2013.03.032

    DOI: 10.1016/j.mee.2013.03.032

    Gate Stacks (Chapter)

    Engström, O., Mitrovic, I. Z., Hall, S., Hurley, P. K., Cherkaoui, K., Monaghan, S., . . . Lemme, M. C. (n.d.). Gate Stacks. In Nanoscale CMOS (pp. 23-67). John Wiley & Sons, Inc.. doi:10.1002/9781118621523.ch2

    DOI: 10.1002/9781118621523.ch2

    Electron trapping at the high-kappa/GeO2 interface: The role of bound states (Journal article)

    Sedghi, N., Ralph, J. F., Mitrovic, I. Z., Chalker, P. R., & Hall, S. (2013). Electron trapping at the high-kappa/GeO2 interface: The role of bound states. APPLIED PHYSICS LETTERS, 102(9). doi:10.1063/1.4794544

    DOI: 10.1063/1.4794544

    Bound states within the notch of the HfO2/GeO2/Ge stack (Journal article)

    Wang, Z., Ralph, J., Sedghi, N., Mitrovic, I. Z., & Hall, S. (2013). Bound states within the notch of the HfO2/GeO2/Ge stack. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 31(2), 021209. doi:10.1116/1.4794378

    DOI: 10.1116/1.4794378

    'A combinatorial approach to the rapid development of transparent conducting oxides' (Conference Paper)

    Treharne, R. E., Phillips, L. J., Durose, K., Weerakkody, D. A., Mitrovic, I., & Hall, S. (2013). 'A combinatorial approach to the rapid development of transparent conducting oxides'. In IEEE (Ed.), Semiconductor Interface Specialist Conference (pp. 1-2). Arlington, VA: SISC.

    'Solar energy harvesting using THz electronics.' (Invited) (Conference Paper)

    Hall, S., Sedghi, N., Mitrovic, I., Ralph, J., & Huang, Y. (2013). 'Solar energy harvesting using THz electronics.' (Invited). In F. Balestra, & A. N. Nazarov (Eds.), Functional Nanomaterials and Devices (pp. 2). Kyiv: TBA.

    Bound states within the notch of the HfO2/GeO2/Ge stack (Conference Paper)

    Wang, Z., Ralph, J., Sedghi, N., Mitrovic, I. Z., & Hall, S. (2013). Bound states within the notch of the HfO2/GeO2/Ge stack. In JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Vol. 31. doi:10.1116/1.4794378

    DOI: 10.1116/1.4794378

    Ge interface engineering by high-k sesquioxides: La2O3, Y2O3 and Tm2O3 (Conference Paper)

    Mitrovic, I., Hall, S., Sedghi, N., Dhanak, V. R., Chalker, P. R., Dimoulas, A., . . . Ostling, M. (2013). Ge interface engineering by high-k sesquioxides: La2O3, Y2O3 and Tm2O3. In European Materials Research Society Meeting (pp. 3-7). Strasbourg: EMRS.

    Towards Rectennas for Solar Energy Harvesting (Conference Paper)

    Sedghi, N., Zhang, J. W., Ralph, J. F., Huang, Y., Mitrovic, I. Z., Hall, S., & IEEE. (2013). Towards Rectennas for Solar Energy Harvesting. In 2013 PROCEEDINGS OF THE EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC) (pp. 131-134). Retrieved from http://gateway.webofknowledge.com/

    2012

    Effect of oxygen on tuning the TiNx metal gate work function on LaLuO3 (Journal article)

    Mitrovic, I. Z., Przewlocki, H. M., Piskorski, K., Simutis, G., Dhanak, V. R., Sedghi, N., & Hall, S. (2012). Effect of oxygen on tuning the TiNx metal gate work function on LaLuO3. THIN SOLID FILMS, 520(23), 6959-6962. doi:10.1016/j.tsf.2012.07.082

    DOI: 10.1016/j.tsf.2012.07.082

    Influence of interlayer properties on the characteristics of high-k gate stacks (Journal article)

    Engstrom, O., Mitrovic, I. Z., & Hall, S. (2012). Influence of interlayer properties on the characteristics of high-k gate stacks. SOLID-STATE ELECTRONICS, 75, 63-68. doi:10.1016/j.sse.2012.04.042

    DOI: 10.1016/j.sse.2012.04.042

    On the nature of the interfacial layer in ultra-thin TiN/LaLuO3 gate stacks (Journal article)

    Mitrovic, I. Z., Hall, S., Sedghi, N., Simutis, G., Dhanak, V. R., Bailey, P., . . . Schubert, J. (2012). On the nature of the interfacial layer in ultra-thin TiN/LaLuO3 gate stacks. JOURNAL OF APPLIED PHYSICS, 112(4). doi:10.1063/1.4746790

    DOI: 10.1063/1.4746790

    'A Charge Trapping Model for 3-Pulse CV: the Origin of Logarithmic and Power Law Regimes in High k Dielectrics' (Conference Paper)

    Sedghi, N., Dowrick, T., Mitrovic, I., & Hall, S. (2012). 'A Charge Trapping Model for 3-Pulse CV: the Origin of Logarithmic and Power Law Regimes in High k Dielectrics'. In Semiconductor Interface Specialist Conference (pp. 2). San Diego: IEEE/SISC.

    'A Model for Hole Trapping in LaLuO3 Based on the 3-Pulse CV Technique' (Conference Paper)

    Sedghi, N., Dowrick, T., Engström, O., Mitrovic, I., & Hall, S. (2012). 'A Model for Hole Trapping in LaLuO3 Based on the 3-Pulse CV Technique'. In Workshop on Dielectrics in Microelectronics (pp. 2). Dresden: WODIM.

    'Bound States and Their Charge Occupancy within the Notch of HfO2/GeO2/Ge Stacks' (Conference Paper)

    Sedghi, N., Ralph, J. F., Mitrovic, I., & Hall, S. (2012). 'Bound States and Their Charge Occupancy within the Notch of HfO2/GeO2/Ge Stacks'. In Semiconductor Interface Specialist Conference (pp. 2). San Diego: IEEE/SISC.

    'Ce doped hafnium oxide on silicon' (Conference Paper)

    Sedghi, N., King, P., Werner, M., Davey, W. M., Mitrovic, I., Chalker, P., . . . Hindley, S. (2012). 'Ce doped hafnium oxide on silicon'. In Semiconductor Interface Specialist Conference (pp. 2). San Diego: IEEE/SISC.

    2011

    Investigation of Electron and Hole Charge Trapping in LaLuO3 Stack MOS Capacitor Using the Three-Pulse CV Technique (Journal article)

    Sedghi, N., Mitrovic, I. Z., Lopes, J. M. J., Schubert, J., & Hall, S. (2011). Investigation of Electron and Hole Charge Trapping in LaLuO3 Stack MOS Capacitor Using the Three-Pulse CV Technique. SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 11, 35(4), 531-543. doi:10.1149/1.3572303

    DOI: 10.1149/1.3572303

    Study of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacks (Journal article)

    Mitrovic, I. Z., Simutis, G., Davey, W. M., Sedghi, N., Hall, S., Dhanak, V. R., . . . Schubert, J. (2011). Study of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacks. MICROELECTRONIC ENGINEERING, 88(7), 1495-1498. doi:10.1016/j.mee.2011.03.051

    DOI: 10.1016/j.mee.2011.03.051

    'CV Measurements on LaLuO3 Stack MOS Capacitor Using a New 3-Pulse Technique' (Journal article)

    Sedghi, N., Davey, W. M., Mitrovic, I., & Hall, S. (2011). 'CV Measurements on LaLuO3 Stack MOS Capacitor Using a New 3-Pulse Technique'. Jnl. Vac. Sci. B, 29(1), 1-6. Retrieved from http://avspublications.org/

    'LaGeOx as a route towards effective passivation of Ge interface.' (Conference Paper)

    Mitrovic, I., Hall, S., Sedghi, N., Spencer, P., Dhanak, V. R., Bailey, P., . . . Tsoutsou, A. (2011). 'LaGeOx as a route towards effective passivation of Ge interface.'. In IEEE (Ed.), Semiconductor Insulator Specialist Conference (SISC) (pp. 45-46). Arlington: IEEE.

    'Reliability Studies on Ta2O5 High ? Dielectric MIM Capacitors Prepared by Wet Anodization' (Journal article)

    Sedghi, N., Davey, W. M., Mitrovic, I., & Hall, S. (2011). 'Reliability Studies on Ta2O5 High ? Dielectric MIM Capacitors Prepared by Wet Anodization'. Jnl. Vac. Sci. B, 29(1), 1-8. Retrieved from http://avspublications.org/

    'Study of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacks ' (Conference Paper)

    Mitrovic, I., Simutis, G., Davey, W. M., Sedghi, N., Hall, S., & Dhanak, V. (2011). 'Study of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacks '. In S. Cristoloveneau (Ed.), Insulating films on Semionductors (pp. 10-13). Grenoble, France: Elsevier.

    CV measurements on LaLuO3 stack metal-oxide-semiconductor capacitor using a new three-pulse technique (Journal article)

    Sedghi, N., Mitrovic, I. Z., Hall, S., Lopes, J. M. J., & Schubert, J. (2011). CV measurements on LaLuO3 stack metal-oxide-semiconductor capacitor using a new three-pulse technique. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 29(1). doi:10.1116/1.3533267

    DOI: 10.1116/1.3533267

    Investigation of Electron and Hole Charge Trapping in LaLuO3 Stack MOS Capacitor Using the 3-Pulse CV Technique (Conference Paper)

    Sedghi, N., Mitrovic, I., Lopes, J. M. J., Schubert, J., & Hall, S. (2011). Investigation of Electron and Hole Charge Trapping in LaLuO3 Stack MOS Capacitor Using the 3-Pulse CV Technique. In 219th Electrochemical Society Meeting (pp. 1-2). Montreal: ECS.

    Reliability studies on Ta2O5 high-kappa dielectric metal-insulator-metal capacitors prepared by wet anodization (Journal article)

    Sedghi, N., Davey, W., Mitrovic, I. Z., & Hall, S. (2011). Reliability studies on Ta2O5 high-kappa dielectric metal-insulator-metal capacitors prepared by wet anodization. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 29(1). doi:10.1116/1.3532823

    DOI: 10.1116/1.3532823

    2010

    'CV Measurements on LaLuO3 Stack MOS Capacitor Using a New 3-Pulse Technique' (Conference Paper)

    Sedghi, N., Davey, W., Mitrovic, I., Lopes, J. M. J., Schubert, J., & Hall, S. (2010). 'CV Measurements on LaLuO3 Stack MOS Capacitor Using a New 3-Pulse Technique'. In Workshop on Dielectrics in Microelectronics (pp. 57). Bratislava: Wodim.

    'Charging phenomena at the interface between high-k dielectrics and SiOx interlayers' (Journal article)

    Engstrom, O., Raeissi, B., Piscator, J., Mitrovic, I., Hall, S., & Gottlob, H. D. B. (2010). 'Charging phenomena at the interface between high-k dielectrics and SiOx interlayers'. Jnl. Telecomms. & IT, 1/2010(1), 10-19. Retrieved from http://www.nit.eu/czasopisma/JTIT/2010/1/10.pdf

    'Reliability Studies on Ta2O5 High ? Dielectric MIM Capacitors Prepared by Wet Anodization' (Conference Paper)

    Sedghi, N., Davey, W., Mitrovic, I., & Hall, S. (2010). 'Reliability Studies on Ta2O5 High ? Dielectric MIM Capacitors Prepared by Wet Anodization'. In Workshop on Dielectrics in Microelectronics (pp. 127). Bratislava: ECS.

    Charge Trapping in LaLuO3 MOS Capacitors using a New 3-Pulse CV Technique (Conference Paper)

    Sedghi, N., Davey, W. M., Mitrovic, I., Hall, S., Lopes, J. M. J., & Schubert, J. (2010). Charge Trapping in LaLuO3 MOS Capacitors using a New 3-Pulse CV Technique. In SISC (pp. 2). San Diego: IEEE.

    2009

    Estimate of dielectric density using spectroscopic ellipsometry (Journal article)

    Davey, W., Buiu, O., Werner, M., Mitrovic, I. Z., Hall, S., & Chalker, P. (2009). Estimate of dielectric density using spectroscopic ellipsometry. MICROELECTRONIC ENGINEERING, 86(7-9), 1905-1907. doi:10.1016/j.mee.2009.03.027

    DOI: 10.1016/j.mee.2009.03.027

    Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics (Journal article)

    Gottlob, H. D. B., Schmidt, M., Stefani, A., Lemme, M. C., Kurz, H., Mitrovic, I. Z., . . . Newcomb, S. B. (2009). Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics. MICROELECTRONIC ENGINEERING, 86(7-9), 1642-1645. doi:10.1016/j.mee.2009.03.084

    DOI: 10.1016/j.mee.2009.03.084

    Breakdown and degradation of ultrathin Hf-based (HfO2)(x)(SiO2)(1-x) gate oxide films (Journal article)

    Uppal, H. J., Mitrovic, I. Z., Hall, S., Hamilton, B., Markevich, V., & Peaker, A. R. (2009). Breakdown and degradation of ultrathin Hf-based (HfO2)(x)(SiO2)(1-x) gate oxide films. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(1), 443-447. doi:10.1116/1.3025822

    DOI: 10.1116/1.3025822

    Gd silicate: A high-k dielectric compatible with high temperature annealing (Journal article)

    Gottlob, H. D. B., Stefani, A., Schmidt, M., Lemme, M. C., Kurz, H., Mitrovic, I. Z., . . . Newcomb, S. B. (2009). Gd silicate: A high-k dielectric compatible with high temperature annealing. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(1), 249-252. doi:10.1116/1.3025904

    DOI: 10.1116/1.3025904

    Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors (Journal article)

    Lu, Y., Hall, S., Tan, L. Z., Mitrovic, I. Z., Davey, W. M., Raeissi, B., . . . Lemme, M. C. (2009). Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(1), 352-355. doi:10.1116/1.3025910

    DOI: 10.1116/1.3025910

    Substitutional C effect on generation lifetime in MBE-grown SiGeC layers (Journal article)

    Mitrovic, I. Z., & Hall, S. (2009). Substitutional C effect on generation lifetime in MBE-grown SiGeC layers. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 24(2). doi:10.1088/0268-1242/24/2/025009

    DOI: 10.1088/0268-1242/24/2/025009

    'Estimate of Dielectric Density using Spectroscopic Ellipsometry' (Conference Paper)

    Davey, W., Buiu, O., Mitrovic, I., Werner, M., Hall, S., & Chalkner, P. (2009). 'Estimate of Dielectric Density using Spectroscopic Ellipsometry'. In J. R. Robertson, & S. Hall (Eds.), INFOS (pp. 4 pages). Cambridge UK: Elsevier. doi:10.1016/j.mee.2009.03.027

    DOI: 10.1016/j.mee.2009.03.027

    'Rare earth silicate formation - a route towards high-k for the 22nm node and Beyond' (Journal article)

    Mitrovic, I., & Hall, S. (2009). 'Rare earth silicate formation - a route towards high-k for the 22nm node and Beyond'. Jnl. Telcomms. & IT, 4, 51-60. Retrieved from http://www.nit.eu/czasopisma/JTIT/2009/4/51.pdf

    2008

    Ellipsometric analysis of mixed metal oxides thin films (Journal article)

    Buiu, O., Davey, W., Lu, Y., Mitrovic, I. Z., & Hall, S. (2008). Ellipsometric analysis of mixed metal oxides thin films. THIN SOLID FILMS, 517(1), 453-455. doi:10.1016/j.tsf.2008.08.119

    DOI: 10.1016/j.tsf.2008.08.119

    'Breakdown and Degradation of Ultra-thin Hf based gate oxide films' (Conference Paper)

    Uppal, H. J., Mitrovic, I., Hall, S., Hamilton, B., Markevich, V., & Peaker, A. R. (2008). 'Breakdown and Degradation of Ultra-thin Hf based gate oxide films'. In 15th Workshop on Dielectrics in Microelectronics (pp. 29-30). Berlin: IHP.

    'Gd silicate: A High-k Dielectric Compatible with High Temperature Annealing' (Conference Paper)

    Gottlob, H. D. B., Schmidt, M., Lemme, M. C., Kurz, H., Mitrovic, I., Werner, M., . . . Newcomb, S. B. (2008). 'Gd silicate: A High-k Dielectric Compatible with High Temperature Annealing'. In 15th workshop on Dielectric in Microelectronics (pp. 155-156). Berlin: IHP.

    'Leakage current effects on C-V plots of high-k MOS capacitors' (Conference Paper)

    Lu, Y., Hall, S., Mitrovic, I., Davey, W. M., Raeissi, B., Engstrom, O., . . . Lemme, M. C. (2008). 'Leakage current effects on C-V plots of high-k MOS capacitors'. In Wodim (pp. 181-182). Berlin: IHP, Germany.

    'Quest for an optimal Gadolinium Silicate gate dielectric stack' (Conference Paper)

    Mitrovic, I., Werner, M., Davey, W. M., Hall, S., Chalker, P. R., Gottlob, H. D. B., . . . Hurley, P. K. (2008). 'Quest for an optimal Gadolinium Silicate gate dielectric stack'. In Semiconductor Interface Specialist Conference (pp. 1-2). San Diego: IEEE.

    2007

    HIGH-kappa dielectric stacks for nanoscaled SOI devices (Journal article)

    Hall, S., Buiu, O., Mitrovic, I. Z., Lu, Y., & Davey, W. M. (2007). HIGH-kappa dielectric stacks for nanoscaled SOI devices. NANOSCALED SEMICONDUCTOR-ON-INSULATOR STRUCTURES AND DEVICES, 33-+. doi:10.1007/978-1-4020-6380-0_3

    DOI: 10.1007/978-1-4020-6380-0_3

    SiGeCHBTs: Impact of C on device pepformance (Chapter)

    Mitrovic, I. Z., El Mubarek, H. A. W., Buiu, O., Hall, S., Ashburn, P., & Zhang, J. (2007). SiGeCHBTs: Impact of C on device pepformance. In Unknown Book (pp. 171-+). doi:10.1007/978-1-4020-6380-0_13

    DOI: 10.1007/978-1-4020-6380-0_13

    Current transport mechanisms in (HfO2)(x)(SiO2)(1-x)/SiO2 gate stacks (Journal article)

    Mitrovic, I. Z., Lu, Y., Buiu, O., & Hall, S. (2007). Current transport mechanisms in (HfO2)(x)(SiO2)(1-x)/SiO2 gate stacks. MICROELECTRONIC ENGINEERING, 84(9-10), 2306-2309. doi:10.1016/j.mee.2007.04.087

    DOI: 10.1016/j.mee.2007.04.087

    Electrical and structural properties of hafnium silicate thin films (Journal article)

    Mitrovic, I. Z., Buiu, O., Hall, S., Bungey, C., Wagner, T., Davey, W., & Lu, Y. (2007). Electrical and structural properties of hafnium silicate thin films. MICROELECTRONICS RELIABILITY, 47(4-5), 645-648. doi:10.1016/j.microrel.2007.01.065

    DOI: 10.1016/j.microrel.2007.01.065

    Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition (Journal article)

    Lu, Y., Buiu, O., Hall, S., Mitrovic, I. Z., Davey, W., Potter, R. J., & Chalker, P. R. (2007). Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition. MICROELECTRONICS RELIABILITY, 47(4-5), 722-725. doi:10.1016/j.microrel.2007.01.052

    DOI: 10.1016/j.microrel.2007.01.052

    Investigation of optical and electronic properties of hafnium aluminate films deposited by Metal-Organic Chemical Vapour Deposition (Journal article)

    Buiu, O., Lu, Y., Hall, S., Mitrovic, I. Z., Potter, R. J., & Chalker, P. R. (2007). Investigation of optical and electronic properties of hafnium aluminate films deposited by Metal-Organic Chemical Vapour Deposition. THIN SOLID FILMS, 515(7-8), 3772-3778. doi:10.1016/j.tsf.2006.09.035

    DOI: 10.1016/j.tsf.2006.09.035

    'Analysis of Metal:(HfO2)x(SiO2)1-x:SiO2:Si MOS structure equivalent circuits' (Conference Paper)

    Gutt, T., Mitrovic, I., Buiu, O., & Hall, S. (2007). 'Analysis of Metal:(HfO2)x(SiO2)1-x:SiO2:Si MOS structure equivalent circuits'. In Electronics and Electronic Technologies Conference Vol. I (pp. 59-61). Opatija, Croatia: MIPRO.

    'Review and perspective of high-k dielectrics on silicon' (Journal article)

    Hall, S., Buiu, O., Mitrovic, I., Lu, Y., & Davey, W. M. (2007). 'Review and perspective of high-k dielectrics on silicon'. Jnl of Telecomms and IT, 2, 33-43. Retrieved from http://www.nit.eu/czasopisma/JTIT/2007/2/33.pdf

    Analysis of Metal:(HfO2)x(SiO2)1-x:SiO2:Si MOS structure equivalent circuits (Conference Paper)

    Gutt, T., Mitrovic, I. Z., Buiu, O., & Hall, S. (2007). Analysis of Metal:(HfO2)x(SiO2)1-x:SiO2:Si MOS structure equivalent circuits. In MIPRO 2007 - 30th Jubilee International Convention Proceedings: Microelectronics, Electronics and Electronic Technologies, Hypermedia and Grid Systems, MEE /HGS Vol. 1 (pp. 59-61).

    2006

    High-? dielectric stacks for nanoscaled SOI devices (Chapter)

    Hall, S., Buiu, O., Mitrovic, I. Z., Lu, Y., & Davey, W. M. (2006). High-? dielectric stacks for nanoscaled SOI devices. In Unknown Book (pp. 33-58).

    SiGeC HBTs: Impact of C on device performance (Chapter)

    Mitrovic, I. Z., El Mubarek, H. A. W., Buiu, O., Hall, S., Ashburn, P., & Zhang, J. (2006). SiGeC HBTs: Impact of C on device performance. In Unknown Book (pp. 171-178).

    Spectroellipsometric assessment of HfO2 thin films (Journal article)

    Buiu, O., Lu, Y., Mitrovic, I. Z., Hall, S., Chalker, P., & Potter, R. J. (2006). Spectroellipsometric assessment of HfO2 thin films. THIN SOLID FILMS, 515(2), 623-626. doi:10.1016/j.tsf.2005.12.215

    DOI: 10.1016/j.tsf.2005.12.215

    The base current and related 1/f noise for SiGeHBTs realized by SEG/NSEG technology on SOI and bulk substrates (Journal article)

    Lukyanchikova, N., Garbar, N., Smolanka, A., Lokshin, M., Hall, S., Buiu, O., . . . Ashburn, P. (2006). The base current and related 1/f noise for SiGeHBTs realized by SEG/NSEG technology on SOI and bulk substrates. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 9(4-5), 727-731. doi:10.1016/j.mssp.2006.08.029

    DOI: 10.1016/j.mssp.2006.08.029

    Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes (Journal article)

    Lu, Y., Buiu, O., Mitrovic, I., Hall, S., Chalker, P. R., Potter, R., . . . Vovk, Y. (n.d.). Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes. ECS Transactions, 1(5), 517-528. doi:10.1149/1.2209301

    DOI: 10.1149/1.2209301

    2005

    Low-frequency noise in SOISiGeHBTs made by selective growth of the si collector and non-selective growth of SiGe base (Chapter)

    Lukyanchikova, N., Garbar, N., Smolanka, A., Lokshin, M., Hall, S., Buiu, O., . . . Ashburn, P. (2005). Low-frequency noise in SOISiGeHBTs made by selective growth of the si collector and non-selective growth of SiGe base. In Unknown Book (Vol. 780, pp. 265-268). Retrieved from http://gateway.webofknowledge.com/

    1/f Noise and generation/recombination noise in SiGeHBTs on SOI (Journal article)

    Lukyanchikova, N., Garbar, N., Smolanka, A., Lokshin, M., Hall, S., Buiu, O., . . . Ashburn, P. (2005). 1/f Noise and generation/recombination noise in SiGeHBTs on SOI. IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(7), 1468-1477. doi:10.1109/TED.2005.850697

    DOI: 10.1109/TED.2005.850697

    GSMBE growth and structural characterisation of SiGeC layers for HBT (Journal article)

    Zhang, J., Neave, J. H., Li, X. B., Fewster, P. F., El Mubarek, H. A. W., Ashburn, P., . . . Hall, S. (2005). GSMBE growth and structural characterisation of SiGeC layers for HBT. JOURNAL OF CRYSTAL GROWTH, 278(1-4), 505-511. doi:10.1016/j.jcrysgro.2004.12.147

    DOI: 10.1016/j.jcrysgro.2004.12.147

    'Low-frequency noise in SOI SiGe HBTs made by selective growth of the Si collector and non-selective growth of SiGe base' (Conference Paper)

    Lukyanchikova, N., Garbar, N., Smolanka, A., Lokshin, M., Hall, S., Buiu, O., . . . Ashburn, P. (2005). 'Low-frequency noise in SOI SiGe HBTs made by selective growth of the Si collector and non-selective growth of SiGe base'. In T. Gonzalez, J. Mateos, & D. Pardo (Eds.), 18th International Conference on Noise and Fluctuations (pp. 265-268). Salamanca, Spain: American Institute of Physics.

    Electrical and materials characterization of GSMBE grown Si1-x-yGexCy layers for heterojunction bipolar transistor applications (Journal article)

    Mitrovic, I. Z., Buiu, O., Hall, S., Zhang, J., Wang, Y., Hemment, P. L. F., . . . Ashburn, P. (2005). Electrical and materials characterization of GSMBE grown Si1-x-yGexCy layers for heterojunction bipolar transistor applications. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 20(1), 95-102. doi:10.1088/0268-1242/20/1/016

    DOI: 10.1088/0268-1242/20/1/016

    Review of SiGeHBTs on SOI (Journal article)

    Mitrovic, I. Z., Buiu, O., Hall, S., Bagnall, D. M., & Ashburn, P. (2005). Review of SiGeHBTs on SOI. SOLID-STATE ELECTRONICS, 49(9), 1556-1567. doi:10.1016/j.sse.2005.07.020

    DOI: 10.1016/j.sse.2005.07.020

    SiGe Heterojunction Bipolar Transistors on Insulating Substrates (Chapter)

    Hall, S., Buiu, O., Mitrovic, I., El Mubarek, H. A. W., Ashburn, P., Bain, M., . . . Zhang, J. (2005). SiGe Heterojunction Bipolar Transistors on Insulating Substrates. In D. Flandre, & A. et (Eds.), 'Science and technology of Semiconductor-On-Insulator structures and devices operating in a harsh environment' (pp. 261-272). Dordreht: Kluwer Academic Publishers.

    2004

    Growth of SiGeC layers by GSMBE and their characterization by X-ray techniques (Conference Paper)

    Zhang, J., Neave, J. H., Li, X. B., Fewster, P. P., El Mubarek, H. A. W., Ashburn, P., . . . Hall, S. (2004). Growth of SiGeC layers by GSMBE and their characterization by X-ray techniques. In Proceedings - Electrochemical Society Vol. 7 (pp. 203-214).

    Carrier lifetime in Ge+ implanted SiGe HBTs structures (Conference Paper)

    Mitrovic, I. Z., Buiu, O., Hall, S., & Ward, P. J. (2004). Carrier lifetime in Ge+ implanted SiGe HBTs structures. In Proceedings of the International Conference on Microelectronics Vol. 24 II (pp. 487-490).

    'Ge+ Implanted SiGe Alloys for HBT devices' (Conference Paper)

    Mitrovic, I., Buiu, O., Hall, S., & Ward, P. J. (2004). 'Ge+ Implanted SiGe Alloys for HBT devices'. In PREP 2004 (pp. 93-94). Hertfordshire, UK: University of Hertfordshire.

    'Optical characterisation of SiGe and SiGe(C) alloy layers for heterojunction bipolar transistors: possibilities and limitations' (Conference Paper)

    Buiu, O., Mitrovic, I., Hall, S., El Mubarek, H. A. W., Ashburn, P., Dilliway, G. D., . . . Zhang, J. (2004). 'Optical characterisation of SiGe and SiGe(C) alloy layers for heterojunction bipolar transistors: possibilities and limitations'. In Optics and Photonics (pp. 21). Glasgow: PHOTON.

    2001

    'BaTiO3-ceramics electrical model based on intergranular contacts' (Journal article)

    Mitrovic, I., & Mitic, V. V. (2001). 'BaTiO3-ceramics electrical model based on intergranular contacts'. Journal of the European Ceramic Society, 21, 2771-2775.

    THE APPLICATION OF STEREOLOGY METHOD FOR ESTIMATING THE NUMBER OF 3D BaTiO3 – CERAMIC GRAINS CONTACT SURFACES (Journal article)

    Mitic, V. V., Nikolic, Z. S., Mitrovic, I., Jordovic, B., & Brankov, V. (n.d.). THE APPLICATION OF STEREOLOGY METHOD FOR ESTIMATING THE NUMBER OF 3D BaTiO3 – CERAMIC GRAINS CONTACT SURFACES. Image Analysis & Stereology, 20(3), 231. doi:10.5566/ias.v20.p231-237

    DOI: 10.5566/ias.v20.p231-237

    The influence of Nb2O5 on BaTiO3 ceramics dielectric properties (Journal article)

    Mitic, V. V., & Mitrovic, I. (2001). The influence of Nb2O5 on BaTiO3 ceramics dielectric properties. Journal of the European Ceramic Society, 21, 2693-2696.

    2000

    The equivalent electrical model of intergranular impedance of BaTiO/sub 3/-ceramics (Conference Paper)

    Mitic, V. V., Petkovic, P. M., & Mitrovic, I. Z. (n.d.). The equivalent electrical model of intergranular impedance of BaTiO/sub 3/-ceramics. In 2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400). IEEE. doi:10.1109/icmel.2000.840568

    DOI: 10.1109/icmel.2000.840568

    1999

    Modeling of intergranular impedance as a function of consolidation parameters (Conference Paper)

    Nikolic, Z. S., Mitic, V. V., & Mitrovic, I. Z. (1999). Modeling of intergranular impedance as a function of consolidation parameters. In TELSIKS '99: 4TH INTERNATIONAL CONFERENCE ON TELECOMMUNICATIONS IN MODERN SATELLITE, CABLE AND BROADCASTING SERVICES, PROCEEDINGS, VOLS 1 AND 2 (pp. 673-676). Retrieved from http://gateway.webofknowledge.com/

    1997

    BaTiO3-ceramics structure and consolidation process (Journal article)

    Mitic, V. V., Kocic, L. M., & Mitrovic, I. (1997). BaTiO3-ceramics structure and consolidation process. Key Engineering Materials, (136 PART 2), 924-927.

    Undated

    Engineered tunnel-barrier terahertz rectifiers for optical nantennas (Presentation material)

    Mitrovic, I., Sedghi, N., Weerakkody, D., Ralph, J. F., Hall, S., Wrench, J., . . . Beeby, S. (n.d.). Engineered tunnel-barrier terahertz rectifiers for optical nantennas. San Jose, CA, USA.