2023
Yuan, W., Yuan, H., Duan, S., Yong, R., Zhu, J., Lim, E. G., . . . Song, P. (2023). Microembossing: A Convenient Process for Fabricating Microchannels on Nanocellulose Paper-Based Microfluidics.. Journal of visualized experiments : JoVE, (200). doi:10.3791/65965DOI: 10.3791/65965
Lin, Y. -X., Chao, D. -S., Liang, J. -H., Shen, Y. -L., Huang, C. -F., Hall, S., & Mitrovic, I. Z. (2023). Ultra-low turn-on voltage quasi-vertical GaN Schottky barrier diode with homogeneous barrier height. SOLID-STATE ELECTRONICS, 207. doi:10.1016/j.sse.2023.108723DOI: 10.1016/j.sse.2023.108723
Tekin, S. B., Almalki, S., Finch, H., Vezzoli, A., O'Brien, L., Dhanak, V. R., . . . Mitrovic, I. Z. (2023). Electron affinity of metal oxide thin films of TiO<sub>2</sub>, ZnO, and NiO and their applicability in 28.3 THz rectenna devices. JOURNAL OF APPLIED PHYSICS, 134(8). doi:10.1063/5.0157726DOI: 10.1063/5.0157726
Li, A., Li, F., Chen, K., Zhu, Y., Wang, W., Mitrovic, I. Z., . . . Liu, W. (2023). A Supply Voltage Insensitive Two-Transistor Temperature Sensor with PTAT/CTAT Outputs based on Monolithic GaN Integrated Circuits. IEEE Transactions on Power Electronics, 1-5. doi:10.1109/tpel.2023.3288937DOI: 10.1109/tpel.2023.3288937
Yin, L., Ding, C., Liu, C., Zhao, C., Zha, W., Mitrovic, I. Z., . . . Zhao, C. (2023). A Multifunctional Molecular Bridging Layer for High Efficiency, Hysteresis-Free, and Stable Perovskite Solar Cells. ADVANCED ENERGY MATERIALS, 13(25). doi:10.1002/aenm.202301161DOI: 10.1002/aenm.202301161
Cui, M., Zhu, Y., Cao, P., Li, A., Bu, Q., Mitrovic, I. Z., . . . Zhao, C. (2023). A monolithic GaN driver with a deadtime generator (DTG) for high‐temperature (HT) GaN DC‐DC buck converters. IET Power Electronics. doi:10.1049/pel2.12498DOI: 10.1049/pel2.12498
Yuan, W., Yuan, H., Jiao, K., Zhu, J., Lim, E. G., Mitrovic, I., . . . Song, P. (2023). Facile Microembossing Process for Microchannel Fabrication for Nanocellulose-Paper-Based Microfluidics. ACS APPLIED MATERIALS & INTERFACES, 15(5), 6420-6430. doi:10.1021/acsami.2c19354DOI: 10.1021/acsami.2c19354
Geng, X., Liu, C., Zhao, C., Jiang, Z., Lim, E. G., Wang, Y., . . . Song, P. (2023). Sulfydryl-modified MXene as a sulfur host for highly stable Li-S batteries. ELECTROCHIMICA ACTA, 441. doi:10.1016/j.electacta.2023.141877DOI: 10.1016/j.electacta.2023.141877
2022
Li, A., Shen, Y., Li, Z., Li, F., Sun, R., Mitrovic, I. Z., . . . Liu, W. (2022). A 4-Transistor Monolithic Solution to Highly Linear On-Chip Temperature Sensing in GaN Power Integrated Circuits. IEEE Electron Device Letters, 44(2), 333-336. doi:10.1109/led.2022.3226684DOI: 10.1109/led.2022.3226684
Liu, Q., Yin, L., Zhao, C., Wang, J., Wu, Z., Lei, H., . . . Wen, Z. (2022). Hybrid mixed-dimensional perovskite/metal-oxide heterojunction for all-in-one opto-electric artificial synapse and retinal-neuromorphic system. NANO ENERGY, 102. doi:10.1016/j.nanoen.2022.107686DOI: 10.1016/j.nanoen.2022.107686
Sun, Y., Yuan, Y., Geng, X., Han, C., Lu, S., Mitrovic, I., . . . Zhao, C. (2022). Biochar-derived material decorated by MXene/reduced graphene oxide using one-step hydrothermal treatment as high-performance supercapacitor electrodes. CARBON, 199, 224-232. doi:10.1016/j.carbon.2022.07.058DOI: 10.1016/j.carbon.2022.07.058
Shen, Z., Zhao, C., Kang, L., Sun, Y., Liu, Y., Mitrovic, I. Z., . . . Zhao, C. (2022). Emerging Optical In-Memory Computing Sensor Synapses Based on Low-Dimensional Nanomaterials for Neuromorphic Networks. ADVANCED INTELLIGENT SYSTEMS, 4(9). doi:10.1002/aisy.202100236DOI: 10.1002/aisy.202100236
Noureddine, I. N., Sedghi, N., Wrench, J. S., Mitrovic, I. Z., Chalker, P. R., & Hall, S. (2022). <p>Structural and electrical investigation of MI<sub>2</sub>M and MI<sub>3</sub>M diodes for improved non-linear, low bias rectification</p>. SOLID-STATE ELECTRONICS, 194. doi:10.1016/j.sse.2022.108349DOI: 10.1016/j.sse.2022.108349
Wang, Q. N., Zhao, C., Liu, W., Mitrovic, I. Z., van Zalinge, H., Liu, Y. N., & Zhao, C. Z. (2022). Synaptic transistors based on transparent oxide for neural image recognition. SOLID-STATE ELECTRONICS, 194. doi:10.1016/j.sse.2022.108342DOI: 10.1016/j.sse.2022.108342
Liu, Q., Yin, L., Zhao, C., Wu, Z., Wang, J., Yu, X., . . . Zhao, C. Z. (2022). All-in-one metal-oxide heterojunction artificial synapses for visual sensory and neuromorphic computing systems. NANO ENERGY, 97. doi:10.1016/j.nanoen.2022.107171DOI: 10.1016/j.nanoen.2022.107171
Yin, L., Liu, C., Ding, C., Zhao, C., Mitrovic, I. Z., Lim, E. G., . . . Zhao, C. (2022). Functionalized-MXene-nanosheet-doped tin oxide enhances the electrical properties in perovskite solar cells. CELL REPORTS PHYSICAL SCIENCE, 3(6). doi:10.1016/j.xcrp.2022.100905DOI: 10.1016/j.xcrp.2022.100905
Cao, Y. X., Zhao, C., Liu, Z. J., Chen, X. P., Mitrovic, I. Z., Liu, Y. N., . . . Zhao, C. Z. (2022). Bionic artificial synaptic floating gate transistor based on MXene. SOLID-STATE ELECTRONICS, 192. doi:10.1016/j.sse.2022.108257DOI: 10.1016/j.sse.2022.108257
Tekin, S. B., Almalki, S., Vezzoli, A., O’Brien, L., Hall, S., Chalker, P. R., & Mitrovic, I. Z. (2022). (Digital Presentation) Optimization of MIM Rectifiers for Terahertz Rectennas. In ECS Transactions Vol. 108 (pp. 69-79). The Electrochemical Society. doi:10.1149/10802.0069ecstDOI: 10.1149/10802.0069ecst
Fang, Y., Xu, W., Zhao, T., Mitrovic, I. Z., Yang, L., Zhao, C., & Zhao, C. (2022). A promising method to improve the bias-stress and biased-radiation-stress stabilities of solution-processed AlOx thin films. Radiation Physics and Chemistry, 192, 109899. doi:10.1016/j.radphyschem.2021.109899DOI: 10.1016/j.radphyschem.2021.109899
Geng, X., Liu, C., Sun, Y., Zhao, Y., Yi, R., Song, P., . . . Zhao, C. (2022). A Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> MXene-carbon nanocage-sulfur cathode with high conductivity for improving the performance of Li-S batteries. JOURNAL OF ALLOYS AND COMPOUNDS, 895. doi:10.1016/j.jallcom.2021.162586DOI: 10.1016/j.jallcom.2021.162586
Enhanced Electrical Properties of Functional MXene Nanosheets Doped Tin Oxide Electron Transport Layer in Perovskite Solar Cells (Preprint)
DOI: 10.2139/ssrn.4043098
Li, A., Shen, Y., Li, Z., Zhao, Y., Mitrovic, I. Z., Wen, H., . . . Liu, W. (2022). A Monolithically Integrated 2-Transistor Voltage Reference with a Wide Temperature Range Based on AlGaN/GaN Technology. IEEE Electron Device Letters, 1. doi:10.1109/led.2022.3146263DOI: 10.1109/led.2022.3146263
2021
Zhao, C., Zhao, T., Cao, Y., Liu, Y., Yang, L., Mitrovic, I. Z., . . . Zhao, C. Z. (2021). Advanced synaptic transistor device towards AI application in hardware perspective. In 2021 INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT). doi:10.1109/ICICDT51558.2021.9626511DOI: 10.1109/ICICDT51558.2021.9626511
Fang, Y. X., Xu, W. Y., Mitrovic, I. Z., Yang, L., Zhao, C., & Zhao, C. Z. (2021). An environmentally friendly solution-processed ZrLaO gate dielectric for large-area applications in the harsh radiation environment. In 2021 INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT). doi:10.1109/ICICDT51558.2021.9626540DOI: 10.1109/ICICDT51558.2021.9626540
Shen, Z., Zhao, C., Liu, Y., Qi, Y., Mitrovic, I. Z., Yang, L., & Zhao, C. (2021). Performance variation of solution-processed memristor induced by different top electrode. SOLID-STATE ELECTRONICS, 186. doi:10.1016/j.sse.2021.108132DOI: 10.1016/j.sse.2021.108132
Zhao, C., Zhao, T., Shen, Z., Cao, Y., Liu, Y., Yang, L., . . . Zhao, C. Z. (2021). Research on Two-dimensional MXenes Based Synaptic Devices for the Future In-memory Computing. In 2021 IEEE 14th International Conference on ASIC (ASICON). IEEE. doi:10.1109/asicon52560.2021.9620329DOI: 10.1109/asicon52560.2021.9620329
Zhao, T., Zhao, C., Xu, W., Liu, Y., Gao, H., Mitrovic, I. Z., . . . Zhao, C. Z. (2021). Bio-Inspired Photoelectric Artificial Synapse based on Two-Dimensional Ti<sub>3</sub>C<sub>2</sub>T<i><sub>x</sub></i> MXenes Floating Gate. ADVANCED FUNCTIONAL MATERIALS, 31(45). doi:10.1002/adfm.202106000DOI: 10.1002/adfm.202106000
Fang, Y., Zhao, C., Mitrovic, I. Z., & Zhao, C. (2021). High-Performance and Radiation-Hardened Solution-Processed ZrLaO Gate Dielectrics for Large-Area Applications. ACS APPLIED MATERIALS & INTERFACES, 13(42), 50101-50110. doi:10.1021/acsami.1c13633DOI: 10.1021/acsami.1c13633
Almalki, S., Tekin, S. B., Sedghi, N., Hall, S., & Mitrovic, I. Z. (2021). Applicability of Sc<sub>2</sub>O<sub>3</sub> versus Al<sub>2</sub>O<sub>3</sub> in MIM rectifiers for IR rectenna. SOLID-STATE ELECTRONICS, 184. doi:10.1016/j.sse.2021.108082DOI: 10.1016/j.sse.2021.108082
Noureddine, I. N., Sedghi, N., Wrench, J., Chalker, P., Mitrovic, I. Z., & Hall, S. (2021). Fabrication and modelling of MInM diodes with low turn-on voltage. SOLID-STATE ELECTRONICS, 184. doi:10.1016/j.sse.2021.108053DOI: 10.1016/j.sse.2021.108053
Resistive switching performance of memristor with solution-processed stacked MO/2D-materials switching layers (Conference Paper)
Shen, Z., Zhao, C., Mitrovic, I. Z., Zhao, C., Liu, Y., & Yang, L. (2021). Resistive switching performance of memristor with solution-processed stacked MO/2D-materials switching layers. In 2021 INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT). doi:10.1109/ICICDT51558.2021.9626507DOI: 10.1109/ICICDT51558.2021.9626507
Solution-processed Synaptic Transistors Utilizing MXenes as Floating Gate (Conference Paper)
Zhao, T., Zhao, C., Liu, Y., Yang, L., Mitrovic, I. Z., Lim, E. G., & Zhao, C. Z. (2021). Solution-processed Synaptic Transistors Utilizing MXenes as Floating Gate. In 2021 INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT). doi:10.1109/ICICDT51558.2021.9626497DOI: 10.1109/ICICDT51558.2021.9626497
Water-induced Combustion-processed Metal-oxide Synaptic Transistor (Conference Paper)
Liu, Q., Zhao, C., Liu, Y., Mitrovic, I. Z., Xu, W. Y., Yang, L., . . . Yu, X. (2021). Water-induced Combustion-processed Metal-oxide Synaptic Transistor. In 2021 INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT). doi:10.1109/ICICDT51558.2021.9626483DOI: 10.1109/ICICDT51558.2021.9626483
Mitrovic, I. Z., Almalki, S., Tekin, S. B., Sedghi, N., Chalker, P. R., & Hall, S. (n.d.). Oxides for Rectenna Technology. Materials, 14(18), 5218. doi:10.3390/ma14185218DOI: 10.3390/ma14185218
An artificial synaptic thin-film transistor based on 2D MXene-TiO<sub>2</sub> (Conference Paper)
Cao, Y. X., Zhao, C., Mitrovic, I. Z., Liu, Y. N., Yang, L., van Zalinge, H., & Zhao, C. Z. (2021). An artificial synaptic thin-film transistor based on 2D MXene-TiO<sub>2</sub>. In 2021 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS). doi:10.1109/EuroSOI-ULIS53016.2021.9560172DOI: 10.1109/EuroSOI-ULIS53016.2021.9560172
Cai, Y., Zhang, Y., Liang, Y., Mitrovic, I. Z., Wen, H., Liu, W., & Zhao, C. (2021). Low ON-State Resistance Normally-OFF AlGaN/GaN MIS-HEMTs With Partially Recessed Gate and ZrO<i><sub>x</sub></i> Charge Trapping Layer. IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(9), 4310-4316. doi:10.1109/TED.2021.3100002DOI: 10.1109/TED.2021.3100002
Synaptic transistors based on transparent oxide for neural image recognition (Conference Paper)
Wang, Q. N., Zhao, C., Liu, W., Mitrovic, I. Z., van Zalinge, H., Liu, Y. N., & Zhao, C. Z. (2021). Synaptic transistors based on transparent oxide for neural image recognition. In 2021 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS). doi:10.1109/EuroSOI-ULIS53016.2021.9560177DOI: 10.1109/EuroSOI-ULIS53016.2021.9560177
Biswas, S., Paul, A. D., Das, P., Tiwary, P., Edwards, H. J., Dhanak, V. R., . . . Mahapatra, R. (2021). Impact of AlO<i><sub>y</sub></i> Interfacial Layer on Resistive Switching Performance of Flexible HfO<i><sub>x</sub></i>/AlO<i><sub>y</sub></i> ReRAMs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(8), 3787-3793. doi:10.1109/TED.2021.3084554DOI: 10.1109/ted.2021.3084554
Zhao, T., Liu, C., Zhao, C., Xu, W., Liu, Y., Mitrovic, I. Z., . . . Zhao, C. Z. (2021). High-performance solution-processed Ti3C2Tx MXene doped ZnSnO thin-film transistors via the formation of a two-dimensional electron gas. JOURNAL OF MATERIALS CHEMISTRY A, 9(32), 17390-17399. doi:10.1039/d1ta01355fDOI: 10.1039/d1ta01355f
Li, A., Cui, M., Shen, Y., Li, Z., Liu, W., Mitrovic, I. Z., . . . Zhao, C. (2021). Monolithic Comparator and Sawtooth Generator of AlGaN/GaN MIS-HEMTs With Threshold Voltage Modulation for High-Temperature Applications. IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(6), 2673-2679. doi:10.1109/TED.2021.3075425DOI: 10.1109/ted.2021.3075425
Tekin, S., Das, P., Weerakkody, A. D., Sedghi, N., Hall, S., Mitrovic, I. Z., . . . Chalker, P. R. (2021). Single and Triple Insulator Metal-Insulator-Metal Diodes for Infrared Rectennas. Solid-State Electronics. doi:10.1016/j.sse.2021.108096DOI: 10.1016/j.sse.2021.108096
Liu, Q., Zhao, C., Zhao, T., Liu, Y., Mitrovic, I. Z., Xu, W., . . . Zhao, C. Z. (2021). Ecofriendly Solution-Combustion-Processed Thin-Film Transistors for Synaptic Emulation and Neuromorphic Computing.. ACS applied materials & interfaces. doi:10.1021/acsami.0c20947DOI: 10.1021/acsami.0c20947
Sun, Y., Yi, R., Zhao, Y., Liu, C., Yuan, Y., Geng, X., . . . Zhao, C. (2021). Improved pseudocapacitances of supercapacitors based on electrodes of nitrogen-doped Ti3C2Tx nanosheets with in-situ growth of carbon nanotubes. Journal of Alloys and Compounds, 158347. doi:10.1016/j.jallcom.2020.158347DOI: 10.1016/j.jallcom.2020.158347
Shen, Z., Zhao, C., Zhao, T., Xu, W., Liu, Y., Qi, Y., . . . Zhao, C. Z. (2021). Artificial Synaptic Performance with Learning Behavior for Memristor Fabricated with Stacked Solution-Processed Switching Layers. ACS Applied Electronic Materials, 3(3), 1288-1300. doi:10.1021/acsaelm.0c01094DOI: 10.1021/acsaelm.0c01094
Geng, X., Yi, R., Lin, X., Liu, C., Sun, Y., Zhao, Y., . . . Zhao, C. (2021). A high conductive TiC–TiO2/SWCNT/S composite with effective polysulfides adsorption for high performance Li–S batteries. Journal of Alloys and Compounds, 851, 156793. doi:10.1016/j.jallcom.2020.156793DOI: 10.1016/j.jallcom.2020.156793
2020
Liu, C., Zhao, Y., Yi, R., Wu, H., Yang, W., Li, Y., . . . Zhao, C. (2020). Enhanced electrochemical performance by GeOx-Coated MXene nanosheet anode in lithium-ion batteries. Electrochimica Acta, 358. doi:10.1016/j.electacta.2020.136923DOI: 10.1016/j.electacta.2020.136923
Suppression of Surface Leakage Currents in InAs Avalanche Photodiodes via Sputtering of High-<i>k</i> Dielectric Layers (Journal article)
Cao, Z., Mitrovic, I. Z., & Sandall, I. (2020). Suppression of Surface Leakage Currents in InAs Avalanche Photodiodes via Sputtering of High-<i>k</i> Dielectric Layers. IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(10), 4269-4273. doi:10.1109/TED.2020.3012122DOI: 10.1109/TED.2020.3012122
Resistive Switching Performance of RRAM Device with Stacked Solution-based Dielectric Layers (Conference Paper)
Shen, Z., Zhao, C., Mitrovic, I. Z., Zhao, C., & Yang, L. (2020). Resistive Switching Performance of RRAM Device with Stacked Solution-based Dielectric Layers. In 2020 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS). doi:10.1109/EUROSOI-ULIS49407.2020.9365382DOI: 10.1109/EUROSOI-ULIS49407.2020.9365382
Tekin, S. B., Das, P., Weerakkody, A. D., Sedghi, N., Hall, S., Mitrovic, I. Z., . . . Chalker, P. R. (2020). Single and Triple Insulator Tunnel Rectifiers for Infrared Energy Harvesting. In 2020 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS). doi:10.1109/EUROSOI-ULIS49407.2020.9365388DOI: 10.1109/EUROSOI-ULIS49407.2020.9365388
Shen, Z., Zhao, C., Qi, Y., Xu, W., Liu, Y., Mitrovic, I. Z., . . . Zhao, C. (2020). Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application. NANOMATERIALS, 10(8). doi:10.3390/nano10081437DOI: 10.3390/nano10081437
Liu, Q., Zhao, C., Mitrovic, I. Z., Xu, W., Yang, L., & Zhao, C. Z. (2020). Comproportionation Reaction Synthesis to Realize High‐Performance Water‐Induced Metal‐Oxide Thin‐Film Transistors. Advanced Electronic Materials, 2000072. doi:10.1002/aelm.202000072DOI: 10.1002/aelm.202000072
Zhao, T., Zhao, C., Zhang, J., Mitrovic, I. Z., Lim, E. G., Yang, L., . . . Zhao, C. (2020). Enhancement on the performance of eco-friendly solution-processed InO/AlO thin-film transistors via lithium incorporation. Journal of Alloys and Compounds, 829. doi:10.1016/j.jallcom.2020.154458DOI: 10.1016/j.jallcom.2020.154458
Zhao, T., Zhao, C., Mitrovic, I. Z., Gee Lim, E., Yang, L., Qiu, C., & Zhao, C. Z. (2020). Facile Route for Low-temperature Eco-friendly Solution Processed ZnSnO Thin-film Transistors. In 2020 IEEE International Reliability Physics Symposium (IRPS). IEEE. doi:10.1109/irps45951.2020.9128329DOI: 10.1109/irps45951.2020.9128329
Zhao, Y., Liu, C., Yi, R., Li, Z., Chen, Y., Li, Y., . . . Zhao, C. (2020). Facile preparation of Co3O4 nanoparticles incorporating with highly conductive MXene nanosheets as high-performance anodes for lithium-ion batteries. Electrochimica Acta, 345, 136203. doi:10.1016/j.electacta.2020.136203DOI: 10.1016/j.electacta.2020.136203
Qi, Y. F., Shen, Z. J., Zhao, C., Mitrovic, I. Z., Xu, W. Y., Lim, E. G., . . . Zhao, C. Z. (2020). Resistive switching behavior of solution-processed AlO<sub>x</sub> and GO based RRAM at low temperature. SOLID-STATE ELECTRONICS, 168. doi:10.1016/j.sse.2019.107735DOI: 10.1016/j.sse.2019.107735
Cai, Y., Wang, Y., Liang, Y., Zhang, Y., Liu, W., Wen, H., . . . Zhao, C. (2020). Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices. IEEE Access, 8, 95642-95649. doi:10.1109/access.2020.2995906DOI: 10.1109/access.2020.2995906
Mitrovic, I. Z., Das, P., Jones, L., Gibbon, J., Dhanak, V. R., Mahapatra, R., . . . Thayne, I. G. (2020). (Invited) Band Line-up of High-k Oxides on GaN. ECS Transactions, 97(1), 67-81. doi:10.1149/09701.0067ecstDOI: 10.1149/09701.0067ecst
Shen, Z., Zhao, C., Qi, Y., Mitrovic, I. Z., Yang, L., Wen, J., . . . Zhao, C. (2020). Memristive Non-Volatile Memory Based on Graphene Materials. MICROMACHINES, 11(4). doi:10.3390/mi11040341DOI: 10.3390/mi11040341
Cai, Y., Liu, W., Cui, M., Sun, R., Liang, Y. C., Wen, H., . . . Zhao, C. (2020). Effect of surface treatment on electrical properties of GaN metal-insulator-semiconductor devices with Al2O3 gate dielectric. JAPANESE JOURNAL OF APPLIED PHYSICS, 59(4). doi:10.35848/1347-4065/ab7863DOI: 10.35848/1347-4065/ab7863
Supardan, S. N., Das, P., Major, J. D., Hannah, A., Zaidi, Z. H., Mahapatra, R., . . . Mitrovic, I. Z. (2020). Band alignments of sputtered dielectrics on GaN. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53(7). doi:10.1088/1361-6463/ab5995DOI: 10.1088/1361-6463/ab5995
Das, P., Jones, L. A. H., Gibbon, J. T., Dhanak, V. R., Partida-Manzanera, T., Roberts, J. W., . . . Mitrovic, I. Z. (2020). Band Line-up Investigation of Atomic Layer Deposited TiAlO and GaAlO on GaN. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 9(6). doi:10.1149/2162-8777/aba4f4DOI: 10.1149/2162-8777/aba4f4
Wen, H., Liang, Y. C., Mitrovic, I. Z., Li, D., Tayahi, M., Lu, F., & Ye, X. (2020). IEEE Access Special Section: Emerging Technologies for Energy Internet. IEEE Access, 8, 213340-213344. doi:10.1109/access.2020.3040490DOI: 10.1109/access.2020.3040490
2019
Aqueous solution-processed AlOx dielectrics and their biased radiation response investigated by an on-site technique (Journal article)
Fang, Y., Zhao, C., Hall, S., Mitrovic, I. Z., Xu, W., Yang, L., . . . Zhao, C. (2019). Aqueous solution-processed AlOx dielectrics and their biased radiation response investigated by an on-site technique. Radiation Physics and Chemistry. doi:10.1016/j.radphyschem.2019.108644DOI: 10.1016/j.radphyschem.2019.108644
Zhao, Y., Liu, C., Sun, Y., Yi, R., Cai, Y., Li, Y., . . . Zhao, C. (2019). 3D-structured multi-walled carbon nanotubes/copper nanowires composite as a porous current collector for the enhanced silicon-based anode. JOURNAL OF ALLOYS AND COMPOUNDS, 803, 505-513. doi:10.1016/j.jallcom.2019.06.302DOI: 10.1016/j.jallcom.2019.06.302
Fang, Y. X., Zhao, C., Mitrovic, I. Z., Hall, S., Yang, L., & Zhao, C. Z. (2019). Bias-stress stability and radiation response of solution-processed AlO<sub>x</sub> dielectrics investigated by on-site measurements. In MICROELECTRONIC ENGINEERING Vol. 217. doi:10.1016/j.mee.2019.111113DOI: 10.1016/j.mee.2019.111113
Effect of Annealing Temperature for Ni/AlO<sub>x</sub>/Pt RRAM Devices Fabricated with Solution-Based Dielectric (Journal article)
Shen, Z., Qi, Y., Mitrovic, I. Z., Zhao, C., Hall, S., Yang, L., . . . Zhao, C. (2019). Effect of Annealing Temperature for Ni/AlO<sub>x</sub>/Pt RRAM Devices Fabricated with Solution-Based Dielectric. MICROMACHINES, 10(7). doi:10.3390/mi10070446DOI: 10.3390/mi10070446
Characteristics of Ni/AlO<sub>x</sub>/Pt RRAM devices with various dielectric fabrication temperatures (Conference Paper)
Shen, Z. J., Zhao, C., Zhao, C. Z., Mitrovic, I. Z., Yang, L., Xu, W. Y., . . . Huang, Y. B. (2019). Characteristics of Ni/AlO<sub>x</sub>/Pt RRAM devices with various dielectric fabrication temperatures. In 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019). doi:10.1109/icicdt.2019.8790838DOI: 10.1109/icicdt.2019.8790838
Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices (Conference Paper)
Cai, Y., Wang, Y., Cui, M., Liu, W., Wen, H., Zhao, C., . . . Chalker, P. R. (2019). Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices. In 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019). doi:10.1109/icicdt.2019.8790844DOI: 10.1109/icicdt.2019.8790844
Enhanced Biased Radiation and Illumination Stress Stability of Solution-processed AlO<sub>x</sub> Dielectrics using Hydrogen Peroxide (Conference Paper)
Fang, Y. X., Zhao, T. S., Zhao, C., Zhao, C. Z., Mitrovic, I. Z., & Yang, L. (2019). Enhanced Biased Radiation and Illumination Stress Stability of Solution-processed AlO<sub>x</sub> Dielectrics using Hydrogen Peroxide. In 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019). doi:10.1109/icicdt.2019.8790870DOI: 10.1109/icicdt.2019.8790870
Plasma-Enhanced Combustion-Processed Al<sub>2</sub>O<sub>3</sub> Gate Oxide for In<sub>2</sub>O<sub>3</sub> Thin Film Transistors (Conference Paper)
Liu, Q. H., Zhao, C., Zhao, C. Z., Mitrovic, I. Z., Hall, S., Xu, W. Y., . . . Cao, Y. X. (2019). Plasma-Enhanced Combustion-Processed Al<sub>2</sub>O<sub>3</sub> Gate Oxide for In<sub>2</sub>O<sub>3</sub> Thin Film Transistors. In 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019). doi:10.1109/icicdt.2019.8790939DOI: 10.1109/icicdt.2019.8790939
Solution Processed ZnSnO Thin-film Transistors with Peroxide-Aluminum Oxide Dielectric (Conference Paper)
Zhao, T. S., Zhao, C., Zhao, C. Z., Xu, W. Y., Yang, L., Mitrovic, I. Z., . . . Yu, S. C. (2019). Solution Processed ZnSnO Thin-film Transistors with Peroxide-Aluminum Oxide Dielectric. In 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019). Retrieved from https://www.webofscience.com/
The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters (Conference Paper)
Cui, M., Cai, Y., Bu, Q., Liu, W., Wen, H., Mitrovic, I. Z., . . . Zhao, C. (2019). The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters. In 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019). doi:10.1109/icicdt.2019.8790909DOI: 10.1109/icicdt.2019.8790909
Liu, C., Zhao, Y., Yi, R., Sun, Y., Li, Y., Yang, L., . . . Zhao, C. (2019). Alloyed Cu/Si core-shell nanoflowers on the three-dimensional graphene foam as an anode for lithium-ion batteries. ELECTROCHIMICA ACTA, 306, 45-53. doi:10.1016/j.electacta.2019.03.071DOI: 10.1016/j.electacta.2019.03.071
AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HFETs Based DC-DC Boost Converters with Integrated Gate Drivers (Conference Paper)
Cui, M., Bu, Q., Cai, Y., Sun, R., Liu, W., Wen, H., . . . Zhao, C. (2019). AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HFETs Based DC-DC Boost Converters with Integrated Gate Drivers. In 2019 10TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND ECCE ASIA (ICPE 2019 - ECCE ASIA). doi:10.23919/icpe2019-ecceasia42246.2019.8796971DOI: 10.23919/icpe2019-ecceasia42246.2019.8796971
Cui, M., Bu, Q., Cai, Y., Sun, R., Liu, W., Wen, H., . . . Zhao, C. (n.d.). Monolithic Integration Design of GaN-based Power Chip Including Gate Driver for High-Temperature DC-DC Converters. Japanese Journal of Applied Physics. doi:10.7567/1347-4065/ab1313DOI: 10.7567/1347-4065/ab1313
Shen, Z. J., Zhao, C., Zhao, C. Z., Mitrovic, I. Z., Yang, L., Xu, W. Y., . . . Huang, Y. B. (2019). Al/GO/Si/Al RRAM with Solution-processed GO dielectric at Low Fabrication Temperature. In 2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS). Retrieved from https://www.webofscience.com/
Zhao, T. S., Zhao, C., Zhao, C. Z., Xu, W. Y., Yang, L., Mitrovic, I. Z., . . . Yu, S. C. (2019). Eco-Friendly, Low-temperature Solution-processed InO/AlO Thin-film Transistor with Li-incorporation. In 2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS). Retrieved from https://www.webofscience.com/
Liu, Q. H., Zhao, C., Zhao, C. Z., Mitrovic, I. Z., Hall, S., Xu, W. Y., . . . Cao, Y. X. (2019). Fully Solution-Processed Sodium Doped ZnO Thin-Film Transistors via a Low-Temperature Aqueous Route. In 2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS). Retrieved from https://www.webofscience.com/
Qi, Y. F., Zhao, C. Z., Zhao, C., Mitrovic, I. Z., Xu, W. Y., Yang, L., . . . He, J. H. (2019). Improved Resistive Switching Behavior in Solution-processed AlO<sub>x</sub> based RRAM. In 2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS). doi:10.1109/eurosoi-ulis45800.2019.9041862DOI: 10.1109/eurosoi-ulis45800.2019.9041862
Maji, S., Samanta, S., Das, P., Maikap, S., Dhanak, V. R., Mitrovic, I. Z., & Mahapatra, R. (2019). Set compliance current induced resistive memory characteristics of W/Hf/HfOx/TiN devices. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 37(2). doi:10.1116/1.5079574DOI: 10.1116/1.5079574
2018
Cui, M., Cai, Y., Lam, S., Liu, W., Zhao, C., Mitrovic, I. Z., . . . Zhao, C. (2018). Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs. In 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC). IEEE. doi:10.1109/edssc.2018.8487160DOI: 10.1109/edssc.2018.8487160
Band gap temperature-dependence and exciton-like state in copper antimony sulphide, CuSbS2 (Journal article)
Birkett, M., Savory, C. N., Rajpalke, M. K., Linhart, W. M., Whittles, T. J., Gibbon, J. T., . . . Veal, T. D. (2018). Band gap temperature-dependence and exciton-like state in copper antimony sulphide, CuSbS2. APL Materials, 6(8). doi:10.1063/1.5030207DOI: 10.1063/1.5030207
Investigation of Tm 2 O 3 As a Gate Dielectric for Ge MOS Devices (Conference Paper)
Žurauskaitė, L., Jones, L., Dhanak, V. R., Mitrovic, I. Z., Hellström, P. -E., & Östling, M. (2018). Investigation of Tm 2 O 3 As a Gate Dielectric for Ge MOS Devices. In SiGe, Ge, and Related Materials: Materials, Processing, and Devices 8 Vol. 87 (pp. 67-73). Cancun, Mexico.
Zurauskaite, L., Jones, L., Dhanak, V. R., Mitrovic, I. Z., Hellstrom, P. E., & Ostling, M. (2018). Investigation of Tm<sub>2</sub>O<sub>3</sub><SUP> </SUP>as a Gate Dielectric for Ge MOS Devices. SIGE, GE, AND RELATED COMPOUNDS: MATERIALS, PROCESSING, AND DEVICES 8, 86(7), 67-73. doi:10.1149/08607.0067ecstDOI: 10.1149/08607.0067ecst
Shaw, A. P., & Mitrovic, I. Z. (2018, June 25). Atomic layer deposition zinc oxide devices for transparent electronics.
Band alignments at Ga<sub>2</sub>O<sub>3</sub> heterojunction interfaces with Si and Ge (Journal article)
Gibbon, J. T., Jones, L., Roberts, J. W., Althobaiti, M., Chalker, P. R., Mitrovic, I. Z., & Dhanak, V. R. (2018). Band alignments at Ga<sub>2</sub>O<sub>3</sub> heterojunction interfaces with Si and Ge. AIP ADVANCES, 8(6). doi:10.1063/1.5034459DOI: 10.1063/1.5034459
Gibbon, J. T., Jones, L., Roberts, J. W., Althobaiti, M., Chalker, P. R., Mitrovic, I. Z., & Dhanak, V. R. (2018). Band alignments at Ga2O3 heterojunction interfaces with Si and Ge. AIP Advances, 8(6). doi:10.1063/1.5034459DOI: 10.1063/1.5034459
Jin, J., Zhang, J., Shaw, A., Kudina, V., Mitrovic, I., Wrench, J. S., . . . Hall, S. (2018). A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density. Journal of Physics D: Applied Physics, 51(6). doi:10.1088/1361-6463/aaa4a2DOI: 10.1088/1361-6463/aaa4a2
Supardan, S. N., Das, P., Shaw, A. P., Major, J. D., Valizadeh, R., Hannah, A., . . . Mitrovic, I. Z. (2018). Band alignment of sputtered Al2O3, MgO and ZrO2 on GaN for MIS-HEMTs. In UK Nitrides Consortium (UKNC) Winter Conference. University of Manchester.
Mitrovic, I. Z., Weerakkody, D. A. D. C., Sedghi, N., Ralph, J. F., Hall, S., Dhanak, V. R., . . . Beeby, S. (2018). Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures. Applied Physics Letters, 112, 5 pages. doi:10.1063/1.4999258DOI: 10.1063/1.4999258
2017
Mu, Y., Fang, Y., Zhao, C. Z., Zhao, C., Lu, Q., Qi, Y., . . . Chalker, P. R. (2017). Total Dose Effects and Bias Instabilities of (NH<sub>4</sub>)<sub>2</sub>S Passivated Ge MOS Capacitors With Hf<i><sub>x</sub></i>Zr<sub>1-<i>x</i></sub>O<i><sub>y</sub></i> Thin Films. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64(12), 2913-2921. doi:10.1109/TNS.2017.2768566DOI: 10.1109/TNS.2017.2768566
Mu, Y., Zhao, C. Z., Lu, Q., Zhao, C., Qi, Y., Lam, S., . . . Chalker, P. R. (2017). Effects of biased irradiation on charge trapping in HfO<inf>2</inf> dielectric thin films. In AIP Conference Proceedings Vol. 1877. doi:10.1063/1.4999899DOI: 10.1063/1.4999899
Sawangsri, K., Das, P., Supardan, S. N., Mitrovic, I. Z., Hall, S., Mahapatra, R., . . . Chalker, P. R. (2017). Experimental band alignment of Ta<sub>2</sub>O<sub>5</sub>/GaN for MIS-HEMT applications. In MICROELECTRONIC ENGINEERING Vol. 178 (pp. 178-181). doi:10.1016/j.mee.2017.04.010DOI: 10.1016/j.mee.2017.04.010
Shaw, A., Jin, J. D., Mitrovic, I. Z., Hall, S., Wrench, J. S., & Chalker, P. R. (2017). Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using <i>C</i>-<i>V</i> measurements. In MICROELECTRONIC ENGINEERING Vol. 178 (pp. 213-216). doi:10.1016/j.mee.2017.05.043DOI: 10.1016/j.mee.2017.05.043
Sawangsri, K., Das, P., Supardan, S. N., Mitrovic, I. Z., Hall, S., Mahapatra, R., . . . Chalker, P. R. (2017). Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications. Microelectronic Engineering, 178, 178-181. doi:10.1016/j.mee.2017.04.010DOI: 10.1016/j.mee.2017.04.010
Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements (Journal article)
Shaw, A., Jin, J. D., Mitrovic, I. Z., Hall, S., Wrench, J. S., & Chalker, P. R. (2017). Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements. Microelectronic Engineering, 178, 213-216. doi:10.1016/j.mee.2017.05.043DOI: 10.1016/j.mee.2017.05.043
Birkett, M., Savory, C. N., Fioretti, A. N., Thompson, P., Muryn, C. A., Weerakkody, A. D., . . . Veal, T. D. (2017). Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitride Cu3N. Physical Review B - Condensed Matter and Materials Physics, 95. doi:10.1103/PhysRevB.95.115201DOI: 10.1103/PhysRevB.95.115201
Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition (Journal article)
Jin, J., Wrench, J., Gibbon, J. T., Hesp, D., Shaw, A. P., Mitrovic, I. Z., . . . Hall, S. (2017). Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition. IEEE Transactions on Electron Devices, 64(3), 1225-1230. doi:10.1109/TED.2016.2647284DOI: 10.1109/TED.2016.2647284
Xu, H., Ye, H., Coathup, D., Mitrovic, I. Z., Weerakkody, A. D., & Hu, X. (2017). An insight of p-type to n-type conductivity conversion in oxygen ion-implanted ultrananocrystalline diamond films by impedance spectroscopy. APPLIED PHYSICS LETTERS, 110(3). doi:10.1063/1.4974077DOI: 10.1063/1.4974077
Barrier tuning of atomic layer deposited Ta<sub>2</sub>O<sub>5</sub> and Al<sub>2</sub>O<sub>3</sub> in double dielectric diodes (Journal article)
Noureddine, I. N., Sedghi, N., Mitrovic, I. Z., & Hall, S. (2017). Barrier tuning of atomic layer deposited Ta<sub>2</sub>O<sub>5</sub> and Al<sub>2</sub>O<sub>3</sub> in double dielectric diodes. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 35(1). doi:10.1116/1.4974219DOI: 10.1116/1.4974219
Mu, Y., Zhao, C. Z., Lu, Q., Zhao, C., Qi, Y., Lam, S., . . . Chalker, P. R. (2017). Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64(1), 673-682. doi:10.1109/TNS.2016.2633549DOI: 10.1109/TNS.2016.2633549
2016
Shaw, A., Wrench, J. S., Jin, J. D., Whittles, T. J., Mitrovic, I. Z., Raja, M., . . . Hall, S. (2016). Atomic layer deposition of Nb-doped ZnO for thin film transistors. APPLIED PHYSICS LETTERS, 109(22). doi:10.1063/1.4968194DOI: 10.1063/1.4968194
Hall, S., Chalker, P. R., & Mitrovic, I. (2016). ZnO MESFETS for application to Intelligent Windows. Impact, 2016(2), 49-51. doi:10.21820/23987073.2016.2.49DOI: 10.21820/23987073.2016.2.49
Weerakkody, D. A. (2016, June 30). Engineered High-k Oxides.
Nemr Noureddine, I., Sedghi, N., Mitrovic, I. Z., & Hall, S. (2016). Barrier tuning of atomic layer deposited Ta2O5 and Al2O3 in resonant tunnelling diodes for terahertz applications. In 19th Workshop on Dielectrics in Microelectronics –WODIM. Catania, Italy.
Mitrovic, I. Z., Supardan, S. N., Hesp, D., Dhanak, V. R., Hall, S., Schamm-Chardon, S., . . . Ostling, M. (2016). Structure of the interface in sub-nm EOT TmSiO/HfO2 gate stack. In 19th Workshop on Dielectrics in Microelectronics –WODIM 2016. Catania, Italy.
Mitrovic, I. Z., Weerakkody, A. D., Sedghi, N., Hall, S., Ralph, J. F., Wrench, J. S., . . . Beeby, S. (2016). Tunnel-Barrier Rectifiers for Optical Nantennas. DIELECTRICS FOR NANOSYSTEMS 7: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 72(2), 287-299. doi:10.1149/07202.0287ecstDOI: 10.1149/07202.0287ecst
(Invited) Tunnel-Barrier Rectifiers for Optical Nantennas (Journal article)
Mitrovic, I. Z., Weerakkody, A. D., Sedghi, N., Hall, S., Ralph, J. F., Wrench, J. S., . . . Beeby, S. (2016). (Invited) Tunnel-Barrier Rectifiers for Optical Nantennas. ECS Meeting Abstracts, MA2016-01(16), 1011. doi:10.1149/ma2016-01/16/1011DOI: 10.1149/ma2016-01/16/1011
Maximizing the optical performance of planar CH3NH3PbI3 hybrid perovskite heterojunction stacks (Journal article)
Phillips, L. J., Rashed, A. M., Treharne, R. E., Kay, J., Yates, P., Mitrovic, I. Z., . . . Durose, K. (2016). Maximizing the optical performance of planar CH3NH3PbI3 hybrid perovskite heterojunction stacks. Solar Energy Materials and Solar Cells, 147, 327-333. doi:10.1016/j.solmat.2015.10.007DOI: 10.1016/j.solmat.2015.10.007
Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications (Journal article)
Mu, Y., Zhao, C. Z., Qi, Y., Lam, S., Zhao, C., Lu, Q., . . . Chalker, P. R. (2016). Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 372, 14-28. doi:10.1016/j.nimb.2016.01.035DOI: 10.1016/j.nimb.2016.01.035
Shaw, A., Jin, J. D., Mitrovic, I. Z., Hall, S., Wrench, J. S., & Chalker, P. R. (2016). Controlling the physical and electrical properties of ALD grown ZnO using Nb as a dopant. In 2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2016) (pp. 28-31). Retrieved from https://www.webofscience.com/
Effects of annealing conditions on resistive switching characteristics of SnO<sub>x</sub> thin films (Journal article)
Jin, J., Zhang, J., Kemal, R. E., Luo, Y., Bao, P., Althobaiti, M., . . . Song, A. (2016). Effects of annealing conditions on resistive switching characteristics of SnO<sub>x</sub> thin films. JOURNAL OF ALLOYS AND COMPOUNDS, 673, 54-59. doi:10.1016/j.jallcom.2016.02.215DOI: 10.1016/j.jallcom.2016.02.215
2015
Lu, Q., Mu, Y., Roberts, J. W., Althobaiti, M., Dhanak, V. R., Wu, J., . . . Chalker, P. R. (2015). Electrical Properties and Interfacial Studies of Hf<i><sub>x</sub></i>Ti<sub>1-<i>x</i></sub>O<sub>2</sub> High Permittivity Gate Insulators Deposited on Germanium Substrates. MATERIALS, 8(12), 8169-8182. doi:10.3390/ma8125454DOI: 10.3390/ma8125454
Phillips, L. J., Rashed, A. M., Treharne, R. E., Kay, J., Yates, P., Mitrovic, I. Z., . . . Durose, K. (2015). Dispersion relation data for methylammonium lead triiodide perovskite deposited on a (100) silicon wafer using a two-step vapour-phase reaction process. DATA IN BRIEF, 5, 926-928. doi:10.1016/j.dib.2015.10.026DOI: 10.1016/j.dib.2015.10.026
Althobaiti, M., Mather, S., Sedghi, N., Dhanak, V. R., Mitrovic, I. Z., Hall, S., & Chalker, P. R. (2015). Hafnia and alumina on sulphur passivated germanium. Vacuum, 122, 306-309. doi:10.1016/j.vacuum.2015.03.017DOI: 10.1016/j.vacuum.2015.03.017
Hafnia and alumina on sulphur passivated germanium (Poster)
Althobaiti, M., Mather, S., Sedghi, N., Dhanak, V. R., Mitrovic, I. Z., Hall, S., & Chalker, P. R. (2015). Hafnia and alumina on sulphur passivated germanium. Poster session presented at the meeting of Unknown Conference. Retrieved from https://www.webofscience.com/DOI: 10.1016/j.vacuum.2015.03.017
Shaw, A., Whittles, T. J., Mitrovic, I. Z., Jin, J. D., Wrench, J. S., Hesp, D., . . . Hall, S. (2015). Physical and Electrical Characterization of Mg-Doped ZnO Thin-Film Transistors. In ESSDERC 2015 PROCEEDINGS OF THE 45TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (pp. 206-209). Retrieved from https://www.webofscience.com/
Weerakkody, A. D., Sedghi, N., Mitrovic, I. Z., van Zalinge, H., Noureddine, I. N., Hall, S., . . . Durose, K. (2015). Enhanced low voltage nonlinearity in resonant tunneling metal-insulator-insulator-metal nanostructures. MICROELECTRONIC ENGINEERING, 147, 298-301. doi:10.1016/j.mee.2015.04.110DOI: 10.1016/j.mee.2015.04.110
Band Alignment of Ta<sub>2</sub>O<sub>5</sub> on Sulphur Passivated Germanium by X-ray Photoelectron Spectroscopy (Conference Paper)
Althobaiti, M. G., Stoner, J., Dhanak, V. R., Potter, R. J., & Mitrovic, I. Z. (2015). Band Alignment of Ta<sub>2</sub>O<sub>5</sub> on Sulphur Passivated Germanium by X-ray Photoelectron Spectroscopy. In 2015 11TH CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME) (pp. 161-163). Retrieved from https://www.webofscience.com/
Shaw, A., Gao, C., Jin, J. D., Mitrovic, I. Z., & Hall, S. (2015). Characterisation and Modelling of Mg Doped ZnO TFTs. In 2015 11TH CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME) (pp. 153-156). Retrieved from https://www.webofscience.com/
Weerakkody, A. D., Sedghi, N., Zhan, X., Mitrovic, I. Z., & Hall, S. (2015). Conduction mechanisms in Al-Ta<sub>2</sub>O<sub>5</sub>-Al<sub>2</sub>O<sub>3</sub>-Al rectifiers. In 2015 11TH CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME) (pp. 133-136). Retrieved from https://www.webofscience.com/
Atomic-layer deposited thulium oxide as a passivation layer on germanium (Journal article)
Mitrovic, I. Z., Hall, S., Althobaiti, M., Hesp, D., Dhanak, V., Santoni, A., . . . Schamm-Chardon, S. (2015). Atomic-layer deposited thulium oxide as a passivation layer on germanium. Journal of Applied Physics, 117(21). doi:10.1063/1.4922121DOI: 10.1063/1.4922121
Shaw, A., Chang, G., Jin, J., Mitrovic, I. Z., & Hall, S. (2015, June 29). Modelling of Mg doped ZnO TFTs. In 11th Conference on PhD Research in Microelectronics and Electronics (IEEE PRIME 2015). University of Glasgow, Glasgow, UK.
Weerakkody, A. D., Sedghi, N., Mitrovic, I. Z., van Zalinge, H., Nemr Noureddine, I., Hall, S., . . . Durose, K. (2015). Enhanced low voltage nonlinearity in resonant tunneling metal–insulator–insulator–metal nanostructures. In Microelectronic Engineering Vol. 147 (pp. 298-301). Elsevier BV. doi:10.1016/j.mee.2015.04.110DOI: 10.1016/j.mee.2015.04.110
Engineered Ta2O5/Al2O3 and Nb2O5/Al2O3 tunnel barriers for next-generation low turn-on voltage high-speed rectifiers (Poster)
Mitrovic, I., Sedghi, N., Weerakkody, D., Ralph, J. F., Hall, S., Wrench, J., & Chalker, P. R. (n.d.). Engineered Ta2O5/Al2O3 and Nb2O5/Al2O3 tunnel barriers for next-generation low turn-on voltage high-speed rectifiers. Poster session presented at the meeting of European Materials Research Society (EMRS 2015). Lille, France.
2014
Wrench, J. S., Brunell, I. F., Chalker, P. R., Jin, J. D., Shaw, A., Mitrovic, I. Z., & Hall, S. (2014). Compositional tuning of atomic layer deposited MgZnO for thin film transistors. APPLIED PHYSICS LETTERS, 105(20). doi:10.1063/1.4902389DOI: 10.1063/1.4902389
Internal photoemission technique for high-k oxide/semiconductor band offset determination The influence of semiconductor bulk properties (Conference Paper)
Engstrom, O., Przewlocki, H. M., Mitrovic, I. Z., & Hall, S. (2014). Internal photoemission technique for high-k oxide/semiconductor band offset determination The influence of semiconductor bulk properties. In PROCEEDINGS OF THE 2014 44TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2014) (pp. 369-372). Retrieved from https://www.webofscience.com/
Zero Bias Resonant Tunnelling Diode for Use in THz Rectenna (Presentation material)
Sedghi, N., Mitrovic, I. Z., Ralph, J. F., & Hall, S. (2014). Zero Bias Resonant Tunnelling Diode for Use in THz Rectenna. Cork, Ireland.
Physical and electrical characterization of Ce-HfO<sub>2</sub> thin films deposited by thermal atomic layer deposition (Journal article)
King, P. J., Sedghi, N., Hall, S., Mitrovic, I. Z., Chalker, P. R., Werner, M., & Hindley, S. (2014). Physical and electrical characterization of Ce-HfO<sub>2</sub> thin films deposited by thermal atomic layer deposition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 32(3). doi:10.1116/1.4826174DOI: 10.1116/1.4826174
Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Sedghi, N., Hall, S., Dhanak, V. R., . . . Ostling, M. (2014). Interface Engineering Routes for a Future CMOS Ge-based Technology. DIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 61(2), 73-88. doi:10.1149/06102.0073ecstDOI: 10.1149/06102.0073ecst
Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Dhanak, V. R., Linhart, W. M., Veal, T. D., . . . Dimoulas, A. (2014). Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature. Journal of Applied Physics, 115(11). doi:10.1063/1.4868091DOI: 10.1063/1.4868091
'Hafnia on sulphur passivated germanium' (Conference Paper)
Althobaiti, M., Mather, S., Sedghi, N., Dhanak, V. R., Mitrovic, I., Hall, S., & Chalker, P. (2014). 'Hafnia on sulphur passivated germanium'. In 13th European surface science Conference (pp. 1-2). Aveiro: EVC13.
Energy Harvesting Using THz Electronics (Chapter)
Hall, S., Mitrovic, I. Z., Sedghi, N., Shen, Y. -C. C., Huang, Y., & Ralph, J. F. (2014). Energy Harvesting Using THz Electronics. In FUNCTIONAL NANOMATERIALS AND DEVICES FOR ELECTRONICS, SENSORS AND ENERGY HARVESTING (pp. 241-265). doi:10.1007/978-3-319-08804-4_12DOI: 10.1007/978-3-319-08804-4_12
Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting (Chapter)
Nazarov, A., Balestra, F., Kilchytska, V., & Flandre, D. (Eds.) (2014). Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting. In . Springer International Publishing. doi:10.1007/978-3-319-08804-4DOI: 10.1007/978-3-319-08804-4
2013
Radiation Response Analyzer of Semiconductor Dies (Conference Paper)
Mu, Y., Zhao, C., Su, S., Zhao, Y., Mitrovic, I., Taylor, S., & Chalker, P. (2013). Radiation Response Analyzer of Semiconductor Dies. In PROCEEDINGS OF THE 2013 20TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2013) (pp. 682-685). Retrieved from https://www.webofscience.com/
Interface engineering of Ge using thulium oxide: Band line-up study (Journal article)
Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Sedghi, N., Hall, S., Dhanak, V. R., . . . Östling, M. (2013). Interface engineering of Ge using thulium oxide: Band line-up study. Microelectronic Engineering, 109, 204-207. doi:10.1016/j.mee.2013.03.160DOI: 10.1016/j.mee.2013.03.160
Analysis of electron capture at oxide traps by electric field injection (Journal article)
Engstrom, O., Sedghi, N., Mitrovic, I. Z., & Hall, S. (2013). Analysis of electron capture at oxide traps by electric field injection. APPLIED PHYSICS LETTERS, 102(21). doi:10.1063/1.4807845DOI: 10.1063/1.4807845
Interface engineering of Ge using thulium oxide: Band line-up study (Conference Paper)
Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Sedghi, N., Hall, S., Dhanak, V. R., . . . Ostling, M. (2013). Interface engineering of Ge using thulium oxide: Band line-up study. In MICROELECTRONIC ENGINEERING Vol. 109 (pp. 204-207). doi:10.1016/j.mee.2013.03.160DOI: 10.1016/j.mee.2013.03.160
Low EOT GeO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> on Ge substrate using ultrathin Al deposition (Journal article)
Mather, S., Sedghi, N., Althobaiti, M., Mitrovic, I. Z., Dhanak, V., Chalker, P. R., & Hall, S. (2013). Low EOT GeO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> on Ge substrate using ultrathin Al deposition. MICROELECTRONIC ENGINEERING, 109, 126-128. doi:10.1016/j.mee.2013.03.032DOI: 10.1016/j.mee.2013.03.032
Electron trapping at the high-κ/GeO<sub>2</sub> interface: The role of bound states (Journal article)
Sedghi, N., Ralph, J. F., Mitrovic, I. Z., Chalker, P. R., & Hall, S. (2013). Electron trapping at the high-κ/GeO<sub>2</sub> interface: The role of bound states. APPLIED PHYSICS LETTERS, 102(9). doi:10.1063/1.4794544DOI: 10.1063/1.4794544
Bound states within the notch of the HfO2/GeO2/Ge stack (Journal article)
Wang, Z., Ralph, J., Sedghi, N., Mitrovic, I. Z., & Hall, S. (2013). Bound states within the notch of the HfO2/GeO2/Ge stack. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 31(2). doi:10.1116/1.4794378DOI: 10.1116/1.4794378
Gate Stacks (Chapter)
Engström, O., Mitrovic, I. Z., Hall, S., Hurley, P. K., Cherkaoui, K., Monaghan, S., . . . Lemme, M. C. (2013). Gate Stacks. In Unknown Book (pp. 23-67). Wiley. doi:10.1002/9781118621523.ch2DOI: 10.1002/9781118621523.ch2
'A combinatorial approach to the rapid development of transparent conducting oxides' (Conference Paper)
Treharne, R. E., Phillips, L. J., Durose, K., Weerakkody, D. A., Mitrovic, I., & Hall, S. (2013). 'A combinatorial approach to the rapid development of transparent conducting oxides'. In IEEE (Ed.), Semiconductor Interface Specialist Conference (pp. 1-2). Arlington, VA: SISC.
'Solar energy harvesting using THz electronics.' (Invited) (Conference Paper)
Hall, S., Sedghi, N., Mitrovic, I., Ralph, J., & Huang, Y. (2013). 'Solar energy harvesting using THz electronics.' (Invited). In F. Balestra, & A. N. Nazarov (Eds.), Functional Nanomaterials and Devices (pp. 2). Kyiv: TBA.
Bound states within the notch of the HfO<sub>2</sub>/GeO<sub>2</sub>/Ge stack (Conference Paper)
Wang, Z., Ralph, J., Sedghi, N., Mitrovic, I. Z., & Hall, S. (2013). Bound states within the notch of the HfO<sub>2</sub>/GeO<sub>2</sub>/Ge stack. In JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Vol. 31. doi:10.1116/1.4794378DOI: 10.1116/1.4794378
Ge interface engineering by high-k sesquioxides: La2O3, Y2O3 and Tm2O3 (Conference Paper)
Mitrovic, I., Hall, S., Sedghi, N., Dhanak, V. R., Chalker, P. R., Dimoulas, A., . . . Ostling, M. (2013). Ge interface engineering by high-k sesquioxides: La2O3, Y2O3 and Tm2O3. In European Materials Research Society Meeting (pp. 3-7). Strasbourg: EMRS.
Towards Rectennas for Solar Energy Harvesting (Conference Paper)
Sedghi, N., Zhang, J. W., Ralph, J. F., Huang, Y., Mitrovic, I. Z., & Hall, S. (2013). Towards Rectennas for Solar Energy Harvesting. In 2013 PROCEEDINGS OF THE EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC) (pp. 131-134). Retrieved from https://www.webofscience.com/
2012
Effect of oxygen on tuning the TiNx metal gate work function on LaLuO<sub>3</sub> (Journal article)
Mitrovic, I. Z., Przewlocki, H. M., Piskorski, K., Simutis, G., Dhanak, V. R., Sedghi, N., & Hall, S. (2012). Effect of oxygen on tuning the TiNx metal gate work function on LaLuO<sub>3</sub>. THIN SOLID FILMS, 520(23), 6959-6962. doi:10.1016/j.tsf.2012.07.082DOI: 10.1016/j.tsf.2012.07.082
Influence of interlayer properties on the characteristics of high-<i>k</i> gate stacks (Journal article)
Engstrom, O., Mitrovic, I. Z., & Hall, S. (2012). Influence of interlayer properties on the characteristics of high-<i>k</i> gate stacks. SOLID-STATE ELECTRONICS, 75, 63-68. doi:10.1016/j.sse.2012.04.042DOI: 10.1016/j.sse.2012.04.042
On the nature of the interfacial layer in ultra-thin TiN/LaLuO<sub>3</sub> gate stacks (Journal article)
Mitrovic, I. Z., Hall, S., Sedghi, N., Simutis, G., Dhanak, V. R., Bailey, P., . . . Schubert, J. (2012). On the nature of the interfacial layer in ultra-thin TiN/LaLuO<sub>3</sub> gate stacks. JOURNAL OF APPLIED PHYSICS, 112(4). doi:10.1063/1.4746790DOI: 10.1063/1.4746790
'A Charge Trapping Model for 3-Pulse CV: the Origin of Logarithmic and Power Law Regimes in High k Dielectrics' (Conference Paper)
Sedghi, N., Dowrick, T., Mitrovic, I., & Hall, S. (2012). 'A Charge Trapping Model for 3-Pulse CV: the Origin of Logarithmic and Power Law Regimes in High k Dielectrics'. In Semiconductor Interface Specialist Conference (pp. 2). San Diego: IEEE/SISC.
'A Model for Hole Trapping in LaLuO3 Based on the 3-Pulse CV Technique' (Conference Paper)
Sedghi, N., Dowrick, T., Engström, O., Mitrovic, I., & Hall, S. (2012). 'A Model for Hole Trapping in LaLuO3 Based on the 3-Pulse CV Technique'. In Workshop on Dielectrics in Microelectronics (pp. 2). Dresden: WODIM.
'Bound States and Their Charge Occupancy within the Notch of HfO2/GeO2/Ge Stacks' (Conference Paper)
Sedghi, N., Ralph, J. F., Mitrovic, I., & Hall, S. (2012). 'Bound States and Their Charge Occupancy within the Notch of HfO2/GeO2/Ge Stacks'. In Semiconductor Interface Specialist Conference (pp. 2). San Diego: IEEE/SISC.
'Ce doped hafnium oxide on silicon' (Conference Paper)
Sedghi, N., King, P., Werner, M., Davey, W. M., Mitrovic, I., Chalker, P., . . . Hindley, S. (2012). 'Ce doped hafnium oxide on silicon'. In Semiconductor Interface Specialist Conference (pp. 2). San Diego: IEEE/SISC.
2011
Study of interfaces and band offsets in TiN/amorphous LaLuO<sub>3</sub> gate stacks (Journal article)
Mitrovic, I. Z., Simutis, G., Davey, W. M., Sedghi, N., Hall, S., Dhanak, V. R., . . . Schubert, J. (2011). Study of interfaces and band offsets in TiN/amorphous LaLuO<sub>3</sub> gate stacks. MICROELECTRONIC ENGINEERING, 88(7), 1495-1498. doi:10.1016/j.mee.2011.03.051DOI: 10.1016/j.mee.2011.03.051
Investigation of Electron and Hole Charge Trapping in LaLuO<sub>3</sub> Stack MOS Capacitor Using the Three-Pulse CV Technique (Journal article)
Sedghi, N., Mitrovic, I. Z., Lopes, J. M. J., Schubert, J., & Hall, S. (2011). Investigation of Electron and Hole Charge Trapping in LaLuO<sub>3</sub> Stack MOS Capacitor Using the Three-Pulse CV Technique. SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 11, 35(4), 531-543. doi:10.1149/1.3572303DOI: 10.1149/1.3572303
<i>CV</i> measurements on LaLuO<sub>3</sub> stack metal-oxide-semiconductor capacitor using a new three-pulse technique (Journal article)
Sedghi, N., Mitrovic, I. Z., Hall, S., Lopes, J. M. J., & Schubert, J. (2011). <i>CV</i> measurements on LaLuO<sub>3</sub> stack metal-oxide-semiconductor capacitor using a new three-pulse technique. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 29(1). doi:10.1116/1.3533267DOI: 10.1116/1.3533267
'CV Measurements on LaLuO3 Stack MOS Capacitor Using a New 3-Pulse Technique' (Journal article)
Sedghi, N., Davey, W. M., Mitrovic, I., & Hall, S. (2011). 'CV Measurements on LaLuO3 Stack MOS Capacitor Using a New 3-Pulse Technique'. Jnl. Vac. Sci. B, 29(1), 1-6. Retrieved from http://avspublications.org/
'LaGeOx as a route towards effective passivation of Ge interface.' (Conference Paper)
Mitrovic, I., Hall, S., Sedghi, N., Spencer, P., Dhanak, V. R., Bailey, P., . . . Tsoutsou, A. (2011). 'LaGeOx as a route towards effective passivation of Ge interface.'. In IEEE (Ed.), Semiconductor Insulator Specialist Conference (SISC) (pp. 45-46). Arlington: IEEE.
'Reliability Studies on Ta2O5 High κ Dielectric MIM Capacitors Prepared by Wet Anodization' (Journal article)
Sedghi, N., Davey, W. M., Mitrovic, I., & Hall, S. (2011). 'Reliability Studies on Ta2O5 High κ Dielectric MIM Capacitors Prepared by Wet Anodization'. Jnl. Vac. Sci. B, 29(1), 1-8. Retrieved from http://avspublications.org/
'Study of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacks ' (Conference Paper)
Mitrovic, I., Simutis, G., Davey, W. M., Sedghi, N., Hall, S., & Dhanak, V. (2011). 'Study of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacks '. In S. Cristoloveneau (Ed.), Insulating films on Semionductors (pp. 10-13). Grenoble, France: Elsevier.
Investigation of Electron and Hole Charge Trapping in LaLuO3 Stack MOS Capacitor Using the 3-Pulse CV Technique (Conference Paper)
Sedghi, N., Mitrovic, I., Lopes, J. M. J., Schubert, J., & Hall, S. (2011). Investigation of Electron and Hole Charge Trapping in LaLuO3 Stack MOS Capacitor Using the 3-Pulse CV Technique. In 219th Electrochemical Society Meeting (pp. 1-2). Montreal: ECS.
Reliability studies on Ta<sub>2</sub>O<sub>5</sub> high-κ dielectric metal-insulator-metal capacitors prepared by wet anodization (Journal article)
Sedghi, N., Davey, W., Mitrovic, I. Z., & Hall, S. (2011). Reliability studies on Ta<sub>2</sub>O<sub>5</sub> high-κ dielectric metal-insulator-metal capacitors prepared by wet anodization. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 29(1). doi:10.1116/1.3532823DOI: 10.1116/1.3532823
2010
'CV Measurements on LaLuO3 Stack MOS Capacitor Using a New 3-Pulse Technique' (Conference Paper)
Sedghi, N., Davey, W., Mitrovic, I., Lopes, J. M. J., Schubert, J., & Hall, S. (2010). 'CV Measurements on LaLuO3 Stack MOS Capacitor Using a New 3-Pulse Technique'. In Workshop on Dielectrics in Microelectronics (pp. 57). Bratislava: Wodim.
'Charging phenomena at the interface between high-k dielectrics and SiOx interlayers' (Journal article)
Engstrom, O., Raeissi, B., Piscator, J., Mitrovic, I., Hall, S., & Gottlob, H. D. B. (2010). 'Charging phenomena at the interface between high-k dielectrics and SiOx interlayers'. Jnl. Telecomms. & IT, 1/2010(1), 10-19. Retrieved from http://www.nit.eu/czasopisma/JTIT/2010/1/10.pdf
'Reliability Studies on Ta2O5 High κ Dielectric MIM Capacitors Prepared by Wet Anodization' (Conference Paper)
Sedghi, N., Davey, W., Mitrovic, I., & Hall, S. (2010). 'Reliability Studies on Ta2O5 High κ Dielectric MIM Capacitors Prepared by Wet Anodization'. In Workshop on Dielectrics in Microelectronics (pp. 127). Bratislava: ECS.
Charge Trapping in LaLuO3 MOS Capacitors using a New 3-Pulse CV Technique (Conference Paper)
Sedghi, N., Davey, W. M., Mitrovic, I., Hall, S., Lopes, J. M. J., & Schubert, J. (2010). Charge Trapping in LaLuO3 MOS Capacitors using a New 3-Pulse CV Technique. In SISC (pp. 2). San Diego: IEEE.
2009
Estimate of dielectric density using spectroscopic ellipsometry (Journal article)
Davey, W., Buiu, O., Werner, M., Mitrovic, I. Z., Hall, S., & Chalker, P. (2009). Estimate of dielectric density using spectroscopic ellipsometry. MICROELECTRONIC ENGINEERING, 86(7-9), 1905-1907. doi:10.1016/j.mee.2009.03.027DOI: 10.1016/j.mee.2009.03.027
Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics (Journal article)
Gottlob, H. D. B., Schmidt, M., Stefani, A., Lemme, M. C., Kurz, H., Mitrovic, I. Z., . . . Newcomb, S. B. (2009). Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics. MICROELECTRONIC ENGINEERING, 86(7-9), 1642-1645. doi:10.1016/j.mee.2009.03.084DOI: 10.1016/j.mee.2009.03.084
Substitutional C effect on generation lifetime in MBE-grown SiGeC layers (Journal article)
Mitrovic, I. Z., & Hall, S. (2009). Substitutional C effect on generation lifetime in MBE-grown SiGeC layers. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 24(2). doi:10.1088/0268-1242/24/2/025009DOI: 10.1088/0268-1242/24/2/025009
Davey, W., Buiu, O., Mitrovic, I., Werner, M., Hall, S., & Chalkner, P. (2009). 'Estimate of Dielectric Density using Spectroscopic Ellipsometry'. In J. R. Robertson, & S. Hall (Eds.), INFOS (pp. 4 pages). Cambridge UK: Elsevier. doi:10.1016/j.mee.2009.03.027DOI: 10.1016/j.mee.2009.03.027
'Rare earth silicate formation - a route towards high-k for the 22nm node and Beyond' (Journal article)
Mitrovic, I., & Hall, S. (2009). 'Rare earth silicate formation - a route towards high-k for the 22nm node and Beyond'. Jnl. Telcomms. & IT, 4, 51-60. Retrieved from http://www.nit.eu/czasopisma/JTIT/2009/4/51.pdf
Breakdown and degradation of ultrathin Hf-based (HfO<sub>2</sub>)<i><sub>x</sub></i>(SiO<sub>2</sub>)<sub>1-<i>x</i></sub> gate oxide films (Journal article)
Uppal, H. J., Mitrovic, I. Z., Hall, S., Hamilton, B., Markevich, V., & Peaker, A. R. (2009). Breakdown and degradation of ultrathin Hf-based (HfO<sub>2</sub>)<i><sub>x</sub></i>(SiO<sub>2</sub>)<sub>1-<i>x</i></sub> gate oxide films. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(1), 443-447. doi:10.1116/1.3025822DOI: 10.1116/1.3025822
Gd silicate: A high-<i>k</i> dielectric compatible with high temperature annealing (Journal article)
Gottlob, H. D. B., Stefani, A., Schmidt, M., Lemme, M. C., Kurz, H., Mitrovic, I. Z., . . . Newcomb, S. B. (2009). Gd silicate: A high-<i>k</i> dielectric compatible with high temperature annealing. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(1), 249-252. doi:10.1116/1.3025904DOI: 10.1116/1.3025904
Leakage current effects on <i>C</i>-<i>V</i> plots of high-<i>k</i> metal-oxide-semiconductor capacitors (Journal article)
Lu, Y., Hall, S., Tan, L. Z., Mitrovic, I. Z., Davey, W. M., Raeissi, B., . . . Lemme, M. C. (2009). Leakage current effects on <i>C</i>-<i>V</i> plots of high-<i>k</i> metal-oxide-semiconductor capacitors. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(1), 352-355. doi:10.1116/1.3025910DOI: 10.1116/1.3025910
2008
Ellipsometric analysis of mixed metal oxides thin films (Journal article)
Buiu, O., Davey, W., Lu, Y., Mitrovic, I. Z., & Hall, S. (2008). Ellipsometric analysis of mixed metal oxides thin films. THIN SOLID FILMS, 517(1), 453-455. doi:10.1016/j.tsf.2008.08.119DOI: 10.1016/j.tsf.2008.08.119
'Breakdown and Degradation of Ultra-thin Hf based gate oxide films' (Conference Paper)
Uppal, H. J., Mitrovic, I., Hall, S., Hamilton, B., Markevich, V., & Peaker, A. R. (2008). 'Breakdown and Degradation of Ultra-thin Hf based gate oxide films'. In 15th Workshop on Dielectrics in Microelectronics (pp. 29-30). Berlin: IHP.
'Gd silicate: A High-k Dielectric Compatible with High Temperature Annealing' (Conference Paper)
Gottlob, H. D. B., Schmidt, M., Lemme, M. C., Kurz, H., Mitrovic, I., Werner, M., . . . Newcomb, S. B. (2008). 'Gd silicate: A High-k Dielectric Compatible with High Temperature Annealing'. In 15th workshop on Dielectric in Microelectronics (pp. 155-156). Berlin: IHP.
'Leakage current effects on C-V plots of high-k MOS capacitors' (Conference Paper)
Lu, Y., Hall, S., Mitrovic, I., Davey, W. M., Raeissi, B., Engstrom, O., . . . Lemme, M. C. (2008). 'Leakage current effects on C-V plots of high-k MOS capacitors'. In Wodim (pp. 181-182). Berlin: IHP, Germany.
'Quest for an optimal Gadolinium Silicate gate dielectric stack' (Conference Paper)
Mitrovic, I., Werner, M., Davey, W. M., Hall, S., Chalker, P. R., Gottlob, H. D. B., . . . Hurley, P. K. (2008). 'Quest for an optimal Gadolinium Silicate gate dielectric stack'. In Semiconductor Interface Specialist Conference (pp. 1-2). San Diego: IEEE.
2007
HIGH-κ dielectric stacks for nanoscaled SOI devices (Journal article)
Hall, S., Buiu, O., Mitrovic, I. Z., Lu, Y., & Davey, W. M. (2007). HIGH-κ dielectric stacks for nanoscaled SOI devices. NANOSCALED SEMICONDUCTOR-ON-INSULATOR STRUCTURES AND DEVICES, 33-+. doi:10.1007/978-1-4020-6380-0_3DOI: 10.1007/978-1-4020-6380-0_3
SiGeCHBTs: Impact of C on device pepformance (Chapter)
Mitrovic, I. Z., El Mubarek, H. A. W., Buiu, O., Hall, S., Ashburn, P., & Zhang, J. (2007). SiGeCHBTs: Impact of C on device pepformance. In Unknown Book (pp. 171-+). doi:10.1007/978-1-4020-6380-0_13DOI: 10.1007/978-1-4020-6380-0_13
Current transport mechanisms in (HfO<sub>2</sub>)<sub>x</sub>(SiO<sub>2</sub>)<sub>1-x</sub>/SiO<sub>2</sub> gate stacks (Journal article)
Mitrovic, I. Z., Lu, Y., Buiu, O., & Hall, S. (2007). Current transport mechanisms in (HfO<sub>2</sub>)<sub>x</sub>(SiO<sub>2</sub>)<sub>1-x</sub>/SiO<sub>2</sub> gate stacks. MICROELECTRONIC ENGINEERING, 84(9-10), 2306-2309. doi:10.1016/j.mee.2007.04.087DOI: 10.1016/j.mee.2007.04.087
Electrical and structural properties of hafnium silicate thin films (Journal article)
Mitrovic, I. Z., Buiu, O., Hall, S., Bungey, C., Wagner, T., Davey, W., & Lu, Y. (2007). Electrical and structural properties of hafnium silicate thin films. MICROELECTRONICS RELIABILITY, 47(4-5), 645-648. doi:10.1016/j.microrel.2007.01.065DOI: 10.1016/j.microrel.2007.01.065
Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition (Journal article)
Lu, Y., Buiu, O., Hall, S., Mitrovic, I. Z., Davey, W., Potter, R. J., & Chalker, P. R. (2007). Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition. MICROELECTRONICS RELIABILITY, 47(4-5), 722-725. doi:10.1016/j.microrel.2007.01.052DOI: 10.1016/j.microrel.2007.01.052
Investigation of optical and electronic properties of hafnium aluminate films deposited by Metal-Organic Chemical Vapour Deposition (Journal article)
Buiu, O., Lu, Y., Hall, S., Mitrovic, I. Z., Potter, R. J., & Chalker, P. R. (2007). Investigation of optical and electronic properties of hafnium aluminate films deposited by Metal-Organic Chemical Vapour Deposition. THIN SOLID FILMS, 515(7-8), 3772-3778. doi:10.1016/j.tsf.2006.09.035DOI: 10.1016/j.tsf.2006.09.035
'Analysis of Metal:(HfO2)x(SiO2)1-x:SiO2:Si MOS structure equivalent circuits' (Conference Paper)
Gutt, T., Mitrovic, I., Buiu, O., & Hall, S. (2007). 'Analysis of Metal:(HfO2)x(SiO2)1-x:SiO2:Si MOS structure equivalent circuits'. In Electronics and Electronic Technologies Conference Vol. I (pp. 59-61). Opatija, Croatia: MIPRO.
'Review and perspective of high-k dielectrics on silicon' (Journal article)
Hall, S., Buiu, O., Mitrovic, I., Lu, Y., & Davey, W. M. (2007). 'Review and perspective of high-k dielectrics on silicon'. Jnl of Telecomms and IT, 2, 33-43. Retrieved from http://www.nit.eu/czasopisma/JTIT/2007/2/33.pdf
Analysis of Metal:(HfO<inf>2</inf>)<inf>x</inf>(SiO<inf>2</inf>)<inf>1-x</inf>:SiO<inf>2</inf>:Si MOS structure equivalent circuits (Conference Paper)
Gutt, T., Mitrovic, I. Z., Buiu, O., & Hall, S. (2007). Analysis of Metal:(HfO<inf>2</inf>)<inf>x</inf>(SiO<inf>2</inf>)<inf>1-x</inf>:SiO<inf>2</inf>:Si MOS structure equivalent circuits. In MIPRO 2007 - 30th Jubilee International Convention Proceedings: Microelectronics, Electronics and Electronic Technologies, Hypermedia and Grid Systems, MEE /HGS Vol. 1 (pp. 59-61).
2006
High-κ dielectric stacks for nanoscaled SOI devices (Chapter)
Hall, S., Buiu, O., Mitrovic, I. Z., Lu, Y., & Davey, W. M. (2006). High-κ dielectric stacks for nanoscaled SOI devices. In Unknown Book (pp. 33-58).
SiGeC HBTs: Impact of C on device performance (Chapter)
Mitrovic, I. Z., El Mubarek, H. A. W., Buiu, O., Hall, S., Ashburn, P., & Zhang, J. (2006). SiGeC HBTs: Impact of C on device performance. In Unknown Book (pp. 171-178).
Spectroellipsometric assessment of HfO<sub>2</sub> thin films (Journal article)
Buiu, O., Lu, Y., Mitrovic, I. Z., Hall, S., Chalker, P., & Potter, R. J. (2006). Spectroellipsometric assessment of HfO<sub>2</sub> thin films. THIN SOLID FILMS, 515(2), 623-626. doi:10.1016/j.tsf.2005.12.215DOI: 10.1016/j.tsf.2005.12.215
The base current and related 1/<i>f</i> noise for SiGeHBTs realized by SEG/NSEG technology on SOI and bulk substrates (Journal article)
Lukyanchikova, N., Garbar, N., Smolanka, A., Lokshin, M., Hall, S., Buiu, O., . . . Ashburn, P. (2006). The base current and related 1/<i>f</i> noise for SiGeHBTs realized by SEG/NSEG technology on SOI and bulk substrates. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 9(4-5), 727-731. doi:10.1016/j.mssp.2006.08.029DOI: 10.1016/j.mssp.2006.08.029
Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes (Journal article)
Lu, Y., Buiu, O., Mitrovic, I., Hall, S., Chalker, P. R., Potter, R., . . . Vovk, Y. (2006). Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes. ECS Transactions, 1(5), 517-528. doi:10.1149/1.2209301DOI: 10.1149/1.2209301
2005
Low-frequency noise in SOISiGeHBTs made by selective growth of the si collector and non-selective growth of SiGe base (Chapter)
Lukyanchikova, N., Garbar, N., Smolanka, A., Lokshin, M., Hall, S., Buiu, O., . . . Ashburn, P. (2005). Low-frequency noise in SOISiGeHBTs made by selective growth of the si collector and non-selective growth of SiGe base. In Unknown Book (Vol. 780, pp. 265-268). Retrieved from https://www.webofscience.com/
1/<i>f</i> Noise and generation/recombination noise in SiGeHBTs on SOI (Journal article)
Lukyanchikova, N., Garbar, N., Smolanka, A., Lokshin, M., Hall, S., Buiu, O., . . . Ashburn, P. (2005). 1/<i>f</i> Noise and generation/recombination noise in SiGeHBTs on SOI. IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(7), 1468-1477. doi:10.1109/TED.2005.850697DOI: 10.1109/TED.2005.850697
GSMBE growth and structural characterisation of SiGeC layers for HBT (Journal article)
Zhang, J., Neave, J. H., Li, X. B., Fewster, P. F., El Mubarek, H. A. W., Ashburn, P., . . . Hall, S. (2005). GSMBE growth and structural characterisation of SiGeC layers for HBT. JOURNAL OF CRYSTAL GROWTH, 278(1-4), 505-511. doi:10.1016/j.jcrysgro.2004.12.147DOI: 10.1016/j.jcrysgro.2004.12.147
'Low-frequency noise in SOI SiGe HBTs made by selective growth of the Si collector and non-selective growth of SiGe base' (Conference Paper)
Lukyanchikova, N., Garbar, N., Smolanka, A., Lokshin, M., Hall, S., Buiu, O., . . . Ashburn, P. (2005). 'Low-frequency noise in SOI SiGe HBTs made by selective growth of the Si collector and non-selective growth of SiGe base'. In T. Gonzalez, J. Mateos, & D. Pardo (Eds.), 18th International Conference on Noise and Fluctuations (pp. 265-268). Salamanca, Spain: American Institute of Physics.
Electrical and materials characterization of GSMBE grown Si<sub>1-<i>x-y</i></sub>Ge<i><sub>x</sub></i>C<i><sub>y</sub></i> layers for heterojunction bipolar transistor applications (Journal article)
Mitrovic, I. Z., Buiu, O., Hall, S., Zhang, J., Wang, Y., Hemment, P. L. F., . . . Ashburn, P. (2005). Electrical and materials characterization of GSMBE grown Si<sub>1-<i>x-y</i></sub>Ge<i><sub>x</sub></i>C<i><sub>y</sub></i> layers for heterojunction bipolar transistor applications. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 20(1), 95-102. doi:10.1088/0268-1242/20/1/016DOI: 10.1088/0268-1242/20/1/016
Review of SiGeHBTs on SOI (Journal article)
Mitrovic, I. Z., Buiu, O., Hall, S., Bagnall, D. M., & Ashburn, P. (2005). Review of SiGeHBTs on SOI. SOLID-STATE ELECTRONICS, 49(9), 1556-1567. doi:10.1016/j.sse.2005.07.020DOI: 10.1016/j.sse.2005.07.020
SiGe Heterojunction Bipolar Transistors on Insulating Substrates (Chapter)
Hall, S., Buiu, O., Mitrovic, I. Z., El Mubarek, H. A. W., Ashburn, P., Bain, M., . . . Zhang, J. (2005). SiGe Heterojunction Bipolar Transistors on Insulating Substrates. In Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment (pp. 261-272). Springer Netherlands. doi:10.1007/1-4020-3013-4_29DOI: 10.1007/1-4020-3013-4_29
2004
Growth of SiGeC layers by GSMBE and their characterization by X-ray techniques (Conference Paper)
Zhang, J., Neave, J. H., Li, X. B., Fewster, P. P., El Mubarek, H. A. W., Ashburn, P., . . . Hall, S. (2004). Growth of SiGeC layers by GSMBE and their characterization by X-ray techniques. In Proceedings - Electrochemical Society Vol. 7 (pp. 203-214).
Carrier lifetime in Ge/sup +/ implanted SiGe HBTs structures (Conference Paper)
Mitrovic, I. Z., Buiu, O., Hall, S., & Ward, P. J. (n.d.). Carrier lifetime in Ge/sup +/ implanted SiGe HBTs structures. In 2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716). IEEE. doi:10.1109/icmel.2004.1314869DOI: 10.1109/icmel.2004.1314869
'Ge+ Implanted SiGe Alloys for HBT devices' (Conference Paper)
Mitrovic, I., Buiu, O., Hall, S., & Ward, P. J. (2004). 'Ge+ Implanted SiGe Alloys for HBT devices'. In PREP 2004 (pp. 93-94). Hertfordshire, UK: University of Hertfordshire.
'Optical characterisation of SiGe and SiGe(C) alloy layers for heterojunction bipolar transistors: possibilities and limitations' (Conference Paper)
Buiu, O., Mitrovic, I., Hall, S., El Mubarek, H. A. W., Ashburn, P., Dilliway, G. D., . . . Zhang, J. (2004). 'Optical characterisation of SiGe and SiGe(C) alloy layers for heterojunction bipolar transistors: possibilities and limitations'. In Optics and Photonics (pp. 21). Glasgow: PHOTON.
2001
BaTiO3-ceramics electrical model based on intergranular contacts (Journal article)
Mitrović, I., & Mitić, V. V. (2001). BaTiO3-ceramics electrical model based on intergranular contacts. Journal of the European Ceramic Society, 21(15), 2771-2775. doi:10.1016/s0955-2219(01)00361-2DOI: 10.1016/s0955-2219(01)00361-2
THE APPLICATION OF STEREOLOGY METHOD FOR ESTIMATING THE NUMBER OF 3D BaTiO3 – CERAMIC GRAINS CONTACT SURFACES (Journal article)
Mitić, V. V., Nikolić, Z. S., Mitrović, I., Jordović, B., & Brankov, V. (n.d.). THE APPLICATION OF STEREOLOGY METHOD FOR ESTIMATING THE NUMBER OF 3D BaTiO3 – CERAMIC GRAINS CONTACT SURFACES. Image Analysis & Stereology, 20(3), 231. doi:10.5566/ias.v20.p231-237DOI: 10.5566/ias.v20.p231-237
The influence of Nb2O5 on BaTiO3 ceramics dielectric properties (Journal article)
Mitić, V. V., & Mitrović, I. (2001). The influence of Nb2O5 on BaTiO3 ceramics dielectric properties. Journal of the European Ceramic Society, 21(15), 2693-2696. doi:10.1016/s0955-2219(01)00347-8DOI: 10.1016/s0955-2219(01)00347-8
2000
The equivalent electrical model of intergranular impedance of BaTiO/sub 3/-ceramics (Conference Paper)
Mitic, V. V., Petkovic, P. M., & Mitrovic, I. Z. (n.d.). The equivalent electrical model of intergranular impedance of BaTiO/sub 3/-ceramics. In 2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400). IEEE. doi:10.1109/icmel.2000.840568DOI: 10.1109/icmel.2000.840568
1999
Modeling of intergranular impedance as a function of consolidation parameters (Conference Paper)
Nikolic, Z. S., Mitic, V. V., & Mitrovic, I. Z. (1999). Modeling of intergranular impedance as a function of consolidation parameters. In TELSIKS '99: 4TH INTERNATIONAL CONFERENCE ON TELECOMMUNICATIONS IN MODERN SATELLITE, CABLE AND BROADCASTING SERVICES, PROCEEDINGS, VOLS 1 AND 2 (pp. 673-676). Retrieved from https://www.webofscience.com/
1997
BaTiO<inf>3</inf>-ceramics structure and consolidation process (Journal article)
Mitić, V. V., Kocić, L. M., & Mitrović, I. (1997). BaTiO<inf>3</inf>-ceramics structure and consolidation process. Key Engineering Materials, (136 PART 2), 924-927.
Undated
Engineered tunnel-barrier terahertz rectifiers for optical nantennas (Presentation material)
Mitrovic, I., Sedghi, N., Weerakkody, D., Ralph, J. F., Hall, S., Wrench, J., . . . Beeby, S. (n.d.). Engineered tunnel-barrier terahertz rectifiers for optical nantennas. San Jose, CA, USA.
GeO <sub>x</sub>-Coated MXene Nanosheet-Based Synaptic Transistors for Enhanced Visual Perception Behaviors (Journal article)
Zhao, T., Liu, C., Zhao, C., Xu, W., Gao, H., Mitrovic, I. Z., . . . Zhao, C. (n.d.). GeO <sub>x</sub>-Coated MXene Nanosheet-Based Synaptic Transistors for Enhanced Visual Perception Behaviors.
