Professor Tony Jones B.Sc.Ph.D.C.Chem.FRSC.C.Sci.
Professor Chemistry
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2015
Heteroleptic titanium alkoxides as single-source precursors for MOCVD of micro-structured TiO2 (Journal article)
Ashraf, S., Aspinall, H. C., Bacsa, J., Chalker, P. R., Davies, H. O., Jones, A. C., . . . Wrench, J. S. (2015). Heteroleptic titanium alkoxides as single-source precursors for MOCVD of micro-structured TiO2. Polyhedron, 85, 761-769. doi:10.1016/j.poly.2014.10.0072012
Thermal Stability of Neodymium Aluminates High-κ Dielectric Deposited by Liquid Injection MOCVD Using Single-Source Heterometallic Alkoxide Precursors (Journal article)
Taechakumput, P., Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Gaskell, J. M., . . . Chen, S. (2012). Thermal Stability of Neodymium Aluminates High-κ Dielectric Deposited by Liquid Injection MOCVD Using Single-Source Heterometallic Alkoxide Precursors. JOURNAL OF NANOMATERIALS, 2012. doi:10.1155/2012/891079Preparation of TiO<sub>2</sub> nanotube/nanoparticle composite particles and their applications in dye-sensitized solar cells (Journal article)
Lee, C. H., Rhee, S. W., & Choi, H. W. (2012). Preparation of TiO<sub>2</sub> nanotube/nanoparticle composite particles and their applications in dye-sensitized solar cells. NANOSCALE RESEARCH LETTERS, 7. doi:10.1186/1556-276X-7-482011
The Solid-State Structures of Dimethylzinc and Diethylzinc (Journal article)
Bacsa, J., Hanke, F., Hindley, S., Odedra, R., Darling, G. R., Jones, A. C., & Steiner, A. (2011). The Solid-State Structures of Dimethylzinc and Diethylzinc. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 50(49), 11685-11687. doi:10.1002/anie.201105099Ce(IV) Complexes with Donor-Functionalized Alkoxide Ligands: Improved Precursors for Chemical Vapor Deposition of CeO<sub>2</sub> (Journal article)
Aspinall, H. C., Bacsa, J., Jones, A. C., Wrench, J. S., Black, K., Chalker, P. R., . . . Odedra, R. (2011). Ce(IV) Complexes with Donor-Functionalized Alkoxide Ligands: Improved Precursors for Chemical Vapor Deposition of CeO<sub>2</sub>. Inorganic Chemistry, 50(22), 11644-11652. doi:10.1021/ic201593sCe(IV) Complexes with Donor-Functionalized Alkoxide Ligands: Improved Precursors for Chemical Vapor Deposition of CeO<sub>2</sub> (Journal article)
Aspinall, H. C., Bacsa, J., Jones, A. C., Wrench, J. S., Black, K., Chalker, P. R., . . . Odedra, R. (2011). Ce(IV) Complexes with Donor-Functionalized Alkoxide Ligands: Improved Precursors for Chemical Vapor Deposition of CeO<sub>2</sub>. INORGANIC CHEMISTRY, 50(22), 11644-11652. doi:10.1021/ic201593sEffect of deposition temperature on the properties of CeO<sub>2</sub> films grown by atomic layer deposition (Journal article)
King, P. J., Werner, M., Chalker, P. R., Jones, A. C., Aspinall, H. C., Basca, J., . . . Heys, P. N. (2011). Effect of deposition temperature on the properties of CeO<sub>2</sub> films grown by atomic layer deposition. THIN SOLID FILMS, 519(13), 4192-4195. doi:10.1016/j.tsf.2011.02.025MOCVD of Vertically Aligned ZnO Nanowires Using Bidentate Ether Adducts of Dimethylzinc (Journal article)
Ashraf, S., Jones, A. C., Bacsa, J., Steiner, A., Chalker, P. R., Beahan, P., . . . Heys, P. N. (2011). MOCVD of Vertically Aligned ZnO Nanowires Using Bidentate Ether Adducts of Dimethylzinc. CHEMICAL VAPOR DEPOSITION, 17(1-3), 45-53. doi:10.1002/cvde.201006881Dimethylzinc adduct chemistry revisited: MOCVD of vertically aligned ZnO nanowires using the dimethylzinc 1,4-dioxane adduct (Journal article)
Kanjolia, R., Jones, A. C., Ashraf, S., Bacsa, J., Black, K., Chalker, P. R., . . . Heys, P. N. (2011). Dimethylzinc adduct chemistry revisited: MOCVD of vertically aligned ZnO nanowires using the dimethylzinc 1,4-dioxane adduct. JOURNAL OF CRYSTAL GROWTH, 315(1), 292-296. doi:10.1016/j.jcrysgro.2010.09.016Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient (Journal article)
Zhao, C. Z., Werner, M., Taylor, S., Chalker, P. R., Jones, A. C., & Zhao, C. (2011). Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient. NANOSCALE RESEARCH LETTERS, 6. doi:10.1007/s11671-010-9782-z2010
A New Method for the Growth of Zinc Oxide Nanowires by MOCVD using Oxygen-Donor Adducts of Dimethylzinc (Journal article)
Black, K., Chalker, P. R., Jones, A. C., King, P. J., Roberts, J. L., & Heys, P. N. (2010). A New Method for the Growth of Zinc Oxide Nanowires by MOCVD using Oxygen-Donor Adducts of Dimethylzinc. CHEMICAL VAPOR DEPOSITION, 16(1-3), 106-111. doi:10.1002/cvde.200906831Investigation of New 2,5-Dimethylpyrrolyl Titanium Alkylamide and Alkoxide Complexes as Precursors for the Liquid Injection MOCVD of TiO<sub>2</sub> (Journal article)
Black, K., Jones, A. C., Bacsa, J., Chalker, P. R., Marshall, P. A., Davies, H. O., . . . Critchlow, G. W. (2010). Investigation of New 2,5-Dimethylpyrrolyl Titanium Alkylamide and Alkoxide Complexes as Precursors for the Liquid Injection MOCVD of TiO<sub>2</sub>. CHEMICAL VAPOR DEPOSITION, 16(1-3), 93-99. doi:10.1002/cvde.200906818The optical properties of vertically aligned ZnO nanowires deposited using a dimethylzinc adduct (Journal article)
Black, K., Jones, A. C., Alexandrou, I., Heys, P. N., & Chalker, P. R. (2010). The optical properties of vertically aligned ZnO nanowires deposited using a dimethylzinc adduct. NANOTECHNOLOGY, 21(4). doi:10.1088/0957-4484/21/4/0457012009
Atomic Layer Deposition of Hafnium Silicate Thin Films Using Tetrakis(diethylamido)hafnium and Tris(2-methyl-2-butoxy)silanol (Journal article)
Liu, J., Lennard, W. N., Goncharova, L. V., Landheer, D., Wu, X., Rushworth, S. A., & Jones, A. C. (2009). Atomic Layer Deposition of Hafnium Silicate Thin Films Using Tetrakis(diethylamido)hafnium and Tris(2-methyl-2-butoxy)silanol. Journal of The Electrochemical Society, 156(8), G89. doi:10.1149/1.3137053Dielectric relaxation of lanthanum doped zirconium oxide (Journal article)
Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Murray, R. T., Gaskell, J. M., & Jones, A. C. (2009). Dielectric relaxation of lanthanum doped zirconium oxide. JOURNAL OF APPLIED PHYSICS, 105(4). doi:10.1063/1.3078038Chapter 8. Chemical Vapour Deposition of Metal Oxides for Microelectronics Applications (Chapter)
Jones, A. C., Aspinall, H. C., & Chalker, P. R. (2009). Chapter 8. Chemical Vapour Deposition of Metal Oxides for Microelectronics Applications. In L. M. Hitchman, & A. C. Jones (Eds.), Chemical Vapour Deposition: Precursors and Processes (pp. 357-412). London: Royal Society of Chemistry.Chemical Vapor Deposition; Precursors, Processes and Applications (Book)
Jones, A. C., & Hitchman, M. L. (Eds.) (2009). Chemical Vapor Deposition; Precursors, Processes and Applications. Cambridge: Royal Society of Chemistry.Frequency dispersion and dielectric relaxation of La<sub>2</sub>Hf<sub>2</sub>O<sub>7</sub> (Journal article)
Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Gaskell, J. M., & Jones, A. C. (2009). Frequency dispersion and dielectric relaxation of La<sub>2</sub>Hf<sub>2</sub>O<sub>7</sub>. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(1), 333-337. doi:10.1116/1.3043535High-<i>k</i> materials and their response to gamma ray radiation (Journal article)
Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Potter, R. J., Gaskell, J. M., & Jones, A. C. (2009). High-<i>k</i> materials and their response to gamma ray radiation. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(1), 411-415. doi:10.1116/1.3071848MOCVD and ALD of CeO2 Thin Films using a Novel Monomeric CeIV Alkoxide Precursor (Journal article)
Wrench, J. S., Black, K., Aspinall, H. C., Jones, A. C., Bacsa, J., Chalker, P. R., . . . Heys, P. N. (2009). MOCVD and ALD of CeO2 Thin Films using a Novel Monomeric CeIV Alkoxide Precursor. Chemical Vapour Deposition, 15, 1-3.2008
Permittivity enhancement of hafnium dioxide high-κ films by cerium doping (Journal article)
Chalker, P. R., Werner, M., Romani, S., Potter, R. J., Black, K., Aspinall, H. C., . . . Heys, P. N. (2008). Permittivity enhancement of hafnium dioxide high-κ films by cerium doping. APPLIED PHYSICS LETTERS, 93(18). doi:10.1063/1.3023059High-k materials and their response to X-ray radiation (Conference Paper)
Zhao, C. Z., Taylor, S., Taechakumput, P., Werner, M., Chalker, P. R., Huang, X. L., . . . Jones, A. C. (2008). High-k materials and their response to X-ray radiation. In Proceedings - Electrochemical Society Vol. PV 2008-1 (pp. 27-32).Origin of frequency dispersion in high-k dielectrics (Conference Paper)
Taechakumput, P., Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Gaskell, J. M., . . . Drobnis, M. (2008). Origin of frequency dispersion in high-k dielectrics. In Proceedings - Electrochemical Society Vol. PV 2008-1 (pp. 20-26).Deposition of ZrO<sub>2</sub> and HfO<sub>2</sub> thin films by liquid injection MOCVD and ALD using <i>ansa</i>-metallocene zirconium and hafnium precursors (Journal article)
Black, K., Aspinall, H. C., Jones, A. C., Przybylak, K., Bacsa, J., Chalker, P. R., . . . Heys, P. N. (2008). Deposition of ZrO<sub>2</sub> and HfO<sub>2</sub> thin films by liquid injection MOCVD and ALD using <i>ansa</i>-metallocene zirconium and hafnium precursors. JOURNAL OF MATERIALS CHEMISTRY, 18(38), 4561-4571. doi:10.1039/b807205aMOCVD of ZnO thin films for potential use as compliant layers for GaN on Si (Journal article)
Black, K., Jones, A. C., Chalker, P. R., Gaskell, J. M., Murray, R. T., Joyce, T. B., & Rushworth, S. A. (2008). MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si. JOURNAL OF CRYSTAL GROWTH, 310(5), 1010-1014. doi:10.1016/j.jcrysgro.2007.11.131'Annealing Effect on Neodymium Aluminates high-k dielectric deposited by Liquid Injection MOCVD using single source Heterometallic Alkoxide precursors' (Conference Paper)
Taechakumput, P., Zhao, C. Z., Taylor, S., Werner, M., Pham, N., Chalker, P. R., . . . Jones, A. C. (2008). 'Annealing Effect on Neodymium Aluminates high-k dielectric deposited by Liquid Injection MOCVD using single source Heterometallic Alkoxide precursors'. In ISTC2008 (pp. 324-326). Shanghai: ECS.'Deposition of ZrO2 and HfO2 thin films by liquid injection ALD using new ansa-metallocene Zr and Hf organometallic precursors' (Conference Paper)
Black, K., Jones, A. C., Przybylak, K., Aspinall, H. C., Chalker, P. R., Taylor, S., . . . Heys, P. N. (2008). 'Deposition of ZrO2 and HfO2 thin films by liquid injection ALD using new ansa-metallocene Zr and Hf organometallic precursors'. In ALD 2008 (pp. 188-207). Bruges: AVS.'Effects of annealing ambient on dielectric relaxation of La doped ZrO2' (Conference Paper)
Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Gaskell, J. M., & Jones, A. C. (2008). 'Effects of annealing ambient on dielectric relaxation of La doped ZrO2'. In WODIM 2008 (pp. 235-236). Berlin: AVS.'Frequency Dispersion and Dielectric Relaxation of La0.5Hf0.5O2' (Conference Paper)
Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Gaskell, J. M., & Jones, A. C. (2008). 'Frequency Dispersion and Dielectric Relaxation of La0.5Hf0.5O2'. In WODIM 2008 (pp. 237-238). Berlin: AVS.'High-k Materials and Their Response to Gamma Ray Radiation', (Conference Paper)
Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Potter, R. J., Gaskell, J. M., & Jones, A. C. (2008). 'High-k Materials and Their Response to Gamma Ray Radiation',. In WODIM 2008, (pp. 5-6). Berlin,: AVS.2007
Deposition of Lanthanum Zirconium Oxide High-<i>k</i> Films by Liquid Injection ALD and MOCVD (Journal article)
Gaskell, J. M., Jones, A. C., Chalker, P. R., Werner, M., Aspinall, H. C., Taylor, S., . . . Heys, P. N. (2007). Deposition of Lanthanum Zirconium Oxide High-<i>k</i> Films by Liquid Injection ALD and MOCVD. CHEMICAL VAPOR DEPOSITION, 13(12), 684-690. doi:10.1002/cvde.200706637Growth of HfO<sub>2</sub> by Liquid Injection MOCVD and ALD Using New Hafnium‐Cyclopentadienyl Precursors (Journal article)
O'Kane, R., Gaskell, J., Jones, A. C., Chalker, P. R., Black, K., Werner, M., . . . Odedra, R. (2007). Growth of HfO<sub>2</sub> by Liquid Injection MOCVD and ALD Using New Hafnium‐Cyclopentadienyl Precursors. Chemical Vapor Deposition, 13(11), 609-617. doi:10.1002/cvde.200706589Liquid injection MOCVD and ALD of ZrO<sub>2</sub> using zr-cyclopentadienyl precursors (Journal article)
Gaskell, J. M., Jones, A. C., Black, K., Chalker, P. R., Leese, T., Kingsley, A., . . . Heys, P. N. (2007). Liquid injection MOCVD and ALD of ZrO<sub>2</sub> using zr-cyclopentadienyl precursors. SURFACE & COATINGS TECHNOLOGY, 201(22-23), 9095-9098. doi:10.1016/j.surfcoat.2007.04.098Molecular design of improved precursors for the MOCVD of oxides used in microelectronics (Journal article)
Jones, A. C., Aspinall, H. C., & Chalker, P. R. (2007). Molecular design of improved precursors for the MOCVD of oxides used in microelectronics. SURFACE & COATINGS TECHNOLOGY, 201(22-23), 9046-9054. doi:10.1016/j.surfcoat.2007.04.118Deposition of lanthanum zirconium oxide high-κ films by liquid injection atomic layer deposition (Journal article)
Gaskell, J. M., Jones, A. C., Aspinall, H. C., Taylor, S., Taechakumput, P., Chalker, P. R., . . . Odedra, R. (2007). Deposition of lanthanum zirconium oxide high-κ films by liquid injection atomic layer deposition. APPLIED PHYSICS LETTERS, 91(11). doi:10.1063/1.2784956Deposition of Pr- and Nd-aluminate by liquid injection MOCVD and ALD using single-source heterometallic alkoxide precursors (Journal article)
Gaskell, J. M., Przybylak, S., Jones, A. C., Aspinall, H. C., Chalker, P. R., Black, K., . . . Taylor, S. (2007). Deposition of Pr- and Nd-aluminate by liquid injection MOCVD and ALD using single-source heterometallic alkoxide precursors. CHEMISTRY OF MATERIALS, 19(19), 4796-4803. doi:10.1021/cm0707556Precursors for MOCVD and ALD of rare earth oxides-complexes of the early lanthanides with a donor-functionalized alkoxide ligand (Journal article)
Aspinall, H. C., Bickley, J. F., Gaskell, J. M., Jones, A. C., Labat, G., Chalker, P. R., & Williams, P. A. (2007). Precursors for MOCVD and ALD of rare earth oxides-complexes of the early lanthanides with a donor-functionalized alkoxide ligand. INORGANIC CHEMISTRY, 46(15), 5852-5860. doi:10.1021/ic061382yOptical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition (Journal article)
Taechakumput, P., Taylor, S., Buiu, O., Potter, R. J., Chalker, P. R., & Jones, A. C. (2007). Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition. MICROELECTRONICS RELIABILITY, 47(4-5), 825-829. doi:10.1016/j.microrel.2007.01.049Deposition of lanthanum zirconium oxide high-kappa films by liquid injection atomic layer deposition (Journal article)
Gaskell, J. M., Jones, A. C., Aspinall, H. C., Taylor, S., Taechakumput, P., Chalker, P. R., . . . Odedra, R. (2007). Deposition of lanthanum zirconium oxide high-kappa films by liquid injection atomic layer deposition. Applied Physics Letters, 91(11), 112912.2006
Liquid injection ALD and MOCVD of lanthanum aluminate using a bimetallic alkoxide precursor (Journal article)
Gaskell, J. M., Jones, A. C., Aspinall, H. C., Przybylak, S., Chalker, P. R., Black, K., . . . Critchlow, G. W. (2006). Liquid injection ALD and MOCVD of lanthanum aluminate using a bimetallic alkoxide precursor. JOURNAL OF MATERIALS CHEMISTRY, 16(39), 3854-3860. doi:10.1039/b609129fAtomic Layer Deposition and Properties of Lanthanum Oxide and Lanthanum‐Aluminum Oxide Films (Journal article)
Kukli, K., Ritala, M., Pore, V., Leskelä, M., Sajavaara, T., Hegde, R. I., . . . Aspinall, H. C. (2006). Atomic Layer Deposition and Properties of Lanthanum Oxide and Lanthanum‐Aluminum Oxide Films. Chemical Vapor Deposition, 12(2-3), 158-164. doi:10.1002/cvde.200506388MOCVD and ALD of high-<i>κ</i> dielectric oxides using alkoxide precursors (Journal article)
Jones, A. C., Aspinall, H. C., Chalker, P. R., Potter, R. J., Manning, T. D., Loo, Y. F., . . . Smith, L. M. (2006). MOCVD and ALD of high-<i>κ</i> dielectric oxides using alkoxide precursors. CHEMICAL VAPOR DEPOSITION, 12(2-3), 83-98. doi:10.1002/cvde.200500023Structural and electrical characterization of amorphous lanthanum hafnium oxide thin films (Journal article)
Loo, Y. F., Taylor, S., Murray, R. T., Jones, A. C., & Chalker, P. R. (2006). Structural and electrical characterization of amorphous lanthanum hafnium oxide thin films. Journal of Applied Physics, 99(103074), 103704.Tantalum(v) diethylamide, [Ta(NEt2)5]: a potentially important and crystalline precursor for the CVD of oxides containing tantalum (Journal article)
Davies, H. O., Jones, A. C., McKinnell, E. A., Raftery, J., Muryn, C. A., Afzaal, M., & O'Brien, P. (2006). Tantalum(v) diethylamide, [Ta(NEt2)5]: a potentially important and crystalline precursor for the CVD of oxides containing tantalum. Journal of Materials Chemistry, 16(23), 2226. doi:10.1039/b602986h2005
Deposition of LaAlO<sub>3</sub> films by liquid injection MOCVD using a new [La-Al] single source alkoxide precursor (Journal article)
Manning, T. D., Loo, Y. F., Jones, A. C., Aspinall, H. C., Chalker, P. R., Bickley, J. F., . . . Critchlow, G. W. (2005). Deposition of LaAlO<sub>3</sub> films by liquid injection MOCVD using a new [La-Al] single source alkoxide precursor. JOURNAL OF MATERIALS CHEMISTRY, 15(33), 3384-3387. doi:10.1039/b507004jDeposition of HfO<sub>2</sub> films by liquid injection MOCVD using a new monomeric alkoxide precursor, [Hf(dmop)<sub>4</sub>] (Journal article)
Loo, Y. F., O'Kane, R., Jones, A. C., Aspinall, H. C., Potter, R. J., Chalker, P. R., . . . Smith, L. M. (2005). Deposition of HfO<sub>2</sub> films by liquid injection MOCVD using a new monomeric alkoxide precursor, [Hf(dmop)<sub>4</sub>]. CHEMICAL VAPOR DEPOSITION, 11(6-7), 299-305. doi:10.1002/cvde.200506384Synthesis and structure of a tantalum(V) tetrakis-O,O chelate: [Ta(tmhd)4][TaCl6] (Journal article)
Davies, H. O., Jones, A. C., Motevalli, M. A., McKinnell, E. A., & O’Brien, P. (2005). Synthesis and structure of a tantalum(V) tetrakis-O,O chelate: [Ta(tmhd)4][TaCl6]. Inorganic Chemistry Communications, 8(7), 585-587. doi:10.1016/j.inoche.2005.03.025Deposition of HfO<sub>2</sub> and ZrO<sub>2</sub> films by liquid injection MOCVD using new monomeric alkoxide precursors (Journal article)
Loo, Y. F., O'Kane, R., Jones, A. C., Aspinall, H. C., Potter, R. J., Chalker, P. R., . . . Smith, L. M. (2005). Deposition of HfO<sub>2</sub> and ZrO<sub>2</sub> films by liquid injection MOCVD using new monomeric alkoxide precursors. JOURNAL OF MATERIALS CHEMISTRY, 15(19), 1896-1902. doi:10.1039/b417389aRecent developments in the MOCVD and ALD of rare earth oxides and silicates (Journal article)
Jones, A. C., Aspinall, H. C., Chalker, P. R., Potter, R. J., Kukli, K., Rahtu, A., . . . Leskelä, M. (2005). Recent developments in the MOCVD and ALD of rare earth oxides and silicates. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 118(1-3), 97-104. doi:10.1016/j.mseb.2004.12.081Deposition of HfO<sub>2</sub>, Gd<sub>2</sub>O<sub>3</sub> and PrO<i><sub>x</sub></i> by liquid injection ALD techniques (Journal article)
Potter, R. J., Chalker, P. R., Manning, T. D., Aspinall, H. C., Loo, Y. F., Jones, A. C., . . . Schumacher, M. (2005). Deposition of HfO<sub>2</sub>, Gd<sub>2</sub>O<sub>3</sub> and PrO<i><sub>x</sub></i> by liquid injection ALD techniques. CHEMICAL VAPOR DEPOSITION, 11(3), 159-169. doi:10.1002/cvde.2004063482004
Atomic vapour deposition (AVD) of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> using an all alkoxide precursor (Journal article)
Chalker, P. R., Potter, R. J., Roberts, J. L., Jones, A. C., Smith, L. M., & Schumacher, M. (2004). Atomic vapour deposition (AVD) of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> using an all alkoxide precursor. JOURNAL OF CRYSTAL GROWTH, 272(1-4), 778-784. doi:10.1016/j.jcrysgro.2004.08.109Evaluation of New Aminoalkoxide Precursors for Atomic Layer Deposition. Growth of Zirconium Dioxide Thin Films and Reaction Mechanism Studies (Journal article)
Matero, R., Ritala, M., Leskelä, M., Sajavaara, T., Jones, A. C., & Roberts, J. L. (2004). Evaluation of New Aminoalkoxide Precursors for Atomic Layer Deposition. Growth of Zirconium Dioxide Thin Films and Reaction Mechanism Studies. Chemistry of Materials, 16(26), 5630-5636. doi:10.1021/cm030669fGrowth of gadolinium oxide thin films by liquid injection MOCVD using a new gadolinium alkoxide precursor (Journal article)
Aspinall, H. C., Gaskell, J. M., Loo, Y. F., Jones, A. C., Chalker, P. R., Potter, R. J., . . . Critchlow, G. W. (2004). Growth of gadolinium oxide thin films by liquid injection MOCVD using a new gadolinium alkoxide precursor. CHEMICAL VAPOR DEPOSITION, 10(6), 301-305. doi:10.1002/cvde.200306310Growth of neodymium oxide thin films by liquid-injection MOCVD using a new neodymium alkoxide precursor (Journal article)
Loo, Y. F., Potter, R. L., Jones, A. C., Aspinall, H. C., Gaskell, J. M., Chalker, P. R., . . . Critchlow, G. W. (2004). Growth of neodymium oxide thin films by liquid-injection MOCVD using a new neodymium alkoxide precursor. CHEMICAL VAPOR DEPOSITION, 10(6), 306-310. doi:10.1002/cvde.200406313Some recent developments in the MOCVD and ALD of high-κ dielectric oxides (Journal article)
Jones, A. C., Aspinall, H. C., Chalker, P. R., Potter, R. J., Kukli, K., Rahtu, A., . . . Leskelä, M. (2004). Some recent developments in the MOCVD and ALD of high-κ dielectric oxides. JOURNAL OF MATERIALS CHEMISTRY, 14(21), 3101-3112. doi:10.1039/b405525jEvaluation of a Praseodymium Precursor for Atomic Layer Deposition of Oxide Dielectric Films (Journal article)
Kukli, K., Ritala, M., Pilvi, T., Sajavaara, T., Leskelä, M., Jones, A. C., . . . Tobin, P. J. (2004). Evaluation of a Praseodymium Precursor for Atomic Layer Deposition of Oxide Dielectric Films. Chemistry of Materials, 16(24), 5162-5168. doi:10.1021/cm0401793Growth of hafnium aluminate thin films by liquid injection MOCVD using alkoxide precursors (Journal article)
Marshall, P. A., Potter, R. J., Jones, A. C., Chalker, P. R., Taylor, S., Critchlow, G. W., & Rushworth, S. A. (2004). Growth of hafnium aluminate thin films by liquid injection MOCVD using alkoxide precursors. CHEMICAL VAPOR DEPOSITION, 10(5), 275-279. doi:10.1002/cvde.200306301Characterization of hafnium aluminate gate dielectrics deposited by liquid injection metalorganic chemical vapor deposition (Journal article)
Potter, R. J., Marshall, P. A., Chalker, P. R., Taylor, S., Jones, A. C., Noakes, T. C. Q., & Bailey, P. (2004). Characterization of hafnium aluminate gate dielectrics deposited by liquid injection metalorganic chemical vapor deposition. APPLIED PHYSICS LETTERS, 84(20), 4119-4121. doi:10.1063/1.1755424Growth of praseodymium oxide and praseodymium silicate thin films by liquid injection MOCVD (Journal article)
Aspinall, H. C., Gaskell, J., Williams, P. A., Jones, A. C., Chalker, P. R., Marshall, P. A., . . . Critchlow, G. W. (2004). Growth of praseodymium oxide and praseodymium silicate thin films by liquid injection MOCVD. CHEMICAL VAPOR DEPOSITION, 10(2), 83-89. doi:10.1002/cvde.200306282Growth of lanthanum oxide thin films by liquid injection MOCVD using a novel lanthanum alkoxide precursor (Journal article)
Aspinall, H. C., Gaskell, J., Williams, P. A., Jones, A. C., Chalker, P. R., Marshall, P. A., . . . Critchlow, G. W. (2004). Growth of lanthanum oxide thin films by liquid injection MOCVD using a novel lanthanum alkoxide precursor. CHEMICAL VAPOR DEPOSITION, 10(1), 13-+. doi:10.1002/cvde.200304164Deposition of hafnium silicate films by liquid injection MOCVD using a single source or dual source approach (Journal article)
Roberts, J. L., Marshall, P. A., Jones, A. C., Chalker, P. R., Bickley, J. F., Williams, P. A., . . . Lindner, J. (2004). Deposition of hafnium silicate films by liquid injection MOCVD using a single source or dual source approach. JOURNAL OF MATERIALS CHEMISTRY, 14(3), 391-395. doi:10.1039/b305665cGrowth of gadolinium oxide thin films by liquid injection MOCVD using a new gadolinium precursor (Journal article)
Aspinall, H. C., Gaskell, J. M., Loo, Y. F., Jones, A. C., Chalker, P. R., Potter, R. J., . . . Critchlow, G. W. (2004). Growth of gadolinium oxide thin films by liquid injection MOCVD using a new gadolinium precursor. Chemical Vapour Deposition, 10, 306.Synthesis and characterisation of four new heterometal alkoxides: potential precursors for the MOCVD of ferroelectric oxides (Journal article)
Jones, A. C., Tobin, N. L., Marshall, P. A., Potter, R. J., Chalker, P. R., Bickley, J. F., . . . Critchlow, G. W. (2004). Synthesis and characterisation of four new heterometal alkoxides: potential precursors for the MOCVD of ferroelectric oxides. JOURNAL OF MATERIALS CHEMISTRY, 14(5), 887-894. doi:10.1039/b312697h2003
Deposition of high-<i>k</i> dielectric oxide films by liquid injection MOCVD (Journal article)
Jones, A. C., Williams, P. A., Chalker, P. R., Taylor, S., Zoolfakr, A., Smith, L. M., & McGraw, P. (2003). Deposition of high-<i>k</i> dielectric oxide films by liquid injection MOCVD. INTEGRATED FERROELECTRICS, 57, 1271-1277. doi:10.1080/714040784Growth of praseodymium oxide thin films by liquid injection MOCVD using a novel praseodymium alkoxide precursor (Journal article)
Aspinall, H. C., Gaskell, J., Williams, P. A., Jones, A. C., Chalker, P. R., Marshall, P. A., . . . Critchlow, G. W. (2003). Growth of praseodymium oxide thin films by liquid injection MOCVD using a novel praseodymium alkoxide precursor. CHEMICAL VAPOR DEPOSITION, 9(5), 235-+. doi:10.1002/cvde.200304160Some recent developments in the chemical vapour deposition of electroceramic oxides (Journal article)
Jones, A. C., & Chalker, P. R. (2003). Some recent developments in the chemical vapour deposition of electroceramic oxides. Journal of Physics D: Applied Physics, 36(6), R53-R79. doi:10.1088/0022-3727/36/6/202Growth of lanthanum silicate thin films by liquid injection MOCVD using tris[bis(trimethylsilyl)amido]lanthanum (Journal article)
Aspinall, H. C., Williams, P. A., Gaskell, J., Jones, A. C., Roberts, J. L., Smith, L. M., . . . Critchlow, G. W. (2003). Growth of lanthanum silicate thin films by liquid injection MOCVD using tris[bis(trimethylsilyl)amido]lanthanum. CHEMICAL VAPOR DEPOSITION, 9(1), 7-+. doi:10.1002/cvde.200290009Growth of hafnium oxide thin films by Liquid Injection MOCVD Using Alkylamide and Hydroxylamide Precursors (Journal article)
Williams, P. A., Jones, A. C., Tobin, N. L., Chalker, P. R., Marshall, P., Taylor, S., . . . Davies, H. O. (2003). Growth of hafnium oxide thin films by Liquid Injection MOCVD Using Alkylamide and Hydroxylamide Precursors. Chem. Vapour Deposition, 9(6), 1-6.Some recent developments in the chemical vapour deposition of electroceramic oxides (Journal article)
Jones, A. C., & Chalker, P. R. (2003). Some recent developments in the chemical vapour deposition of electroceramic oxides. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 36(6), R80-R95. Retrieved from https://www.webofscience.com/2002
HfO<sub>2</sub> and ZrO<sub>2</sub> alternative gate dielectrics for silicon devices by liquid injection chemical vapour deposition (Journal article)
Taylor, S., Williams, P. A., Roberts, J. L., Jones, A. C., & Chalker, P. R. (2002). HfO<sub>2</sub> and ZrO<sub>2</sub> alternative gate dielectrics for silicon devices by liquid injection chemical vapour deposition. ELECTRONICS LETTERS, 38(21), 1285-1286. doi:10.1049/el:20020801Molecular design of improved precursors for the MOCVD of electroceramic oxides (Journal article)
Jones, A. C. (2002). Molecular design of improved precursors for the MOCVD of electroceramic oxides. Journal of Materials Chemistry, 12(9), 2576-2590. doi:10.1039/b202675aNovel mononuclear alkoxide precursors for the MOCVD of ZrO<sub>2</sub> and HfO<sub>2</sub> thin films (Journal article)
Williams, P. A., Roberts, J. L., Jones, A. C., Chalker, P. R., Tobin, N. L., Bickley, J. F., . . . Leedham, T. J. (2002). Novel mononuclear alkoxide precursors for the MOCVD of ZrO<sub>2</sub> and HfO<sub>2</sub> thin films. CHEMICAL VAPOR DEPOSITION, 8(4), 163-170. doi:3.0.CO;2-V">10.1002/1521-3862(20020704)8:4<163::AID-CVDE163>3.0.CO;2-VDOI: 10.1002/1521-3862(20020704)8:4<163::AID-CVDE163>3.0.CO;2-V
The unusual thermal stabilization of MOCVD precursors by the dibenzoyl methanate group:: Liquid injection MOCVD of tantalum oxide and niobium oxide using M(OEt)<sub>4</sub>(dbm) precursors (Journal article)
Williams, P. A., Jones, A. C., Wright, P. J., Crosbie, M. J., Bickley, J. F., Steiner, A., . . . Leedham, T. J. (2002). The unusual thermal stabilization of MOCVD precursors by the dibenzoyl methanate group:: Liquid injection MOCVD of tantalum oxide and niobium oxide using M(OEt)<sub>4</sub>(dbm) precursors. CHEMICAL VAPOR DEPOSITION, 8(3), 110-116. doi:3.0.CO;2-U">10.1002/1521-3862(20020503)8:3<110::AID-CVDE110>3.0.CO;2-UDOI: 10.1002/1521-3862(20020503)8:3<110::AID-CVDE110>3.0.CO;2-U
Atomic layer deposition of ZrO<sub>2</sub> thin films using a new alkoxide precursor (Journal article)
Matero, R., Ritala, M., Leskelä, M., Jones, A. C., Williams, P. A., Bickley, J. F., . . . Davies, H. O. (2002). Atomic layer deposition of ZrO<sub>2</sub> thin films using a new alkoxide precursor. JOURNAL OF NON-CRYSTALLINE SOLIDS, 303(1), 24-28. doi:10.1016/S0022-3093(02)00959-6Novel mononuclear zirconium and hafnium alkoxides;: improved precursors for the MOCVD of ZrO<sub>2</sub> and HfO<sub>2</sub> (Journal article)
Williams, P. A., Roberts, J. L., Jones, A. C., Chalker, P. R., Bickley, J. F., Steiner, A., . . . Leedham, T. J. (2002). Novel mononuclear zirconium and hafnium alkoxides;: improved precursors for the MOCVD of ZrO<sub>2</sub> and HfO<sub>2</sub>. JOURNAL OF MATERIALS CHEMISTRY, 12(2), 165-167. doi:10.1039/b109994a' Novel Mononuclear Alkoxide Precursors for the MOCVD of ZrO2 and HfO2 Thin Films' (Journal article)
Williams, P. A., Roberts, J. L., Jones, A. C., Chalker, P. R., Tobin, N. L., Bickley, J. F., . . . Leedham, T. J. (2002). ' Novel Mononuclear Alkoxide Precursors for the MOCVD of ZrO2 and HfO2 Thin Films'. Chemical Vapor Deposition, 8(4), 163-170.MOCVD of HfO<sub>2</sub> from alkoxide and alkylamide precursors (Journal article)
Roberts, J. L., Williams, P. A., Jones, A. C., Marshall, P., Chalker, P. R., Bickley, J. F., . . . Smith, L. M. (2003). MOCVD of HfO<sub>2</sub> from alkoxide and alkylamide precursors. NOVEL MATERIALS AND PROCESSES FOR ADVANCED CMOS, 745, 173-178. Retrieved from https://www.webofscience.com/Novel mononuclear zirconium and hafnium alkoxides; improved precursors for the MOCVD of ZrO2 and HfO2 (Journal article)
Williams, P. A., Roberts, J. L., Jones, A. C., Chalker, P. R., Bickley, J. F., Steiner, A., . . . Leedham, T. J. (2002). Novel mononuclear zirconium and hafnium alkoxides; improved precursors for the MOCVD of ZrO2 and HfO2. J. Materials Chemistry, 12(2)(2), 165-167.2001
Synthesis and crystal structures of trimethylindium adducts with bidentate and macrocyclic tertiary amines (Journal article)
Coward, K. M., Jones, A. C., Steiner, A., Bickley, J. F., Smith, L. M., & Pemble, M. E. (2001). Synthesis and crystal structures of trimethylindium adducts with bidentate and macrocyclic tertiary amines. JOURNAL OF THE CHEMICAL SOCIETY-DALTON TRANSACTIONS, (1), 41-45. doi:10.1039/b008600mSynthesis and crystal structures of dimethylaminoethanol adducts of Ni(II) acetate and Ni(II) acetylacetonate. Precursors for the sol-gel deposition of electrochromic nickel oxide thin films (Journal article)
Williams, P. A., Jones, A. C., Bickley, J. F., Steiner, A., Davies, H. O., Leedham, T. J., . . . Blyr, A. (2001). Synthesis and crystal structures of dimethylaminoethanol adducts of Ni(II) acetate and Ni(II) acetylacetonate. Precursors for the sol-gel deposition of electrochromic nickel oxide thin films. JOURNAL OF MATERIALS CHEMISTRY, 11(9), 2329-2334. doi:10.1039/b103288gCrystal structure of Bi(OCMe<sub>2</sub>CH<sub>2</sub>OMe)<sub>3</sub> and its use in the MOCVD of Bi<sub>2</sub>O<sub>3</sub> (Journal article)
Williams, P. A., Jones, A. C., Crosbie, M. J., Wright, P. J., Bickley, J. F., Steiner, A., . . . Critchlow, G. W. (2001). Crystal structure of Bi(OCMe<sub>2</sub>CH<sub>2</sub>OMe)<sub>3</sub> and its use in the MOCVD of Bi<sub>2</sub>O<sub>3</sub>. CHEMICAL VAPOR DEPOSITION, 7(5), 205-209. doi:3.0.CO;2-9">10.1002/1521-3862(200109)7:5<205::AID-CVDE205>3.0.CO;2-9DOI: 10.1002/1521-3862(200109)7:5<205::AID-CVDE205>3.0.CO;2-9
Synthesis and crystal structures of three new strontium β-diketonate complexes:: [Sr(tmhd)<sub>2</sub>(<i><SUP>i</SUP></i>PrOH)<sub>4</sub>], [Sr<sub>2</sub>(tmhd)<sub>4</sub>(dmaeH)<sub>2</sub>(μ<sub>2</sub>-dmaeH)<sub>2</sub>] and [Sr<sub>4</sub>(tmod)<sub>8</sub>] (Journal article)
Davies, H. O., Brooks, J. J., Jones, A. C., Leedham, T. J., Bickley, J. F., Steiner, A., . . . Williams, D. J. (2001). Synthesis and crystal structures of three new strontium β-diketonate complexes:: [Sr(tmhd)<sub>2</sub>(<i><SUP>i</SUP></i>PrOH)<sub>4</sub>], [Sr<sub>2</sub>(tmhd)<sub>4</sub>(dmaeH)<sub>2</sub>(μ<sub>2</sub>-dmaeH)<sub>2</sub>] and [Sr<sub>4</sub>(tmod)<sub>8</sub>]. POLYHEDRON, 20(18), 2397-2403. doi:10.1016/S0277-5387(01)00830-0Crystal structure of a strontium-tantalum and a magnesium-niobium heterometal alkoxide: precursors for the MOCVD of ferroelectric oxides (Journal article)
Jones, A. C., Davies, H. O., Leedham, T. J., Wright, P. J., Crosbie, M. J., Steiner, A., . . . Williams, D. J. (2001). Crystal structure of a strontium-tantalum and a magnesium-niobium heterometal alkoxide: precursors for the MOCVD of ferroelectric oxides. JOURNAL OF MATERIALS CHEMISTRY, 11(2), 544-548. doi:10.1039/b006529nImproved precursors for the MOCVD of SBT, SBN and SBTN (Journal article)
Leedham, T. J., Jones, A. C., Davies, H. O., Tobin, N. L., Williams, P. A., Bickley, J. F., & Steiner, A. (2001). Improved precursors for the MOCVD of SBT, SBN and SBTN. INTEGRATED FERROELECTRICS, 36(1-4), 111-118. doi:10.1080/10584580108015533Purification of dialkylzinc precursors using tertiary amine ligands (Journal article)
Smith, L. M., Coward, K. M., Jones, A. C., Bickley, J. F., Steiner, A., Petroni, S., & Roberts, J. S. (2001). Purification of dialkylzinc precursors using tertiary amine ligands. JOURNAL OF ELECTRONIC MATERIALS, 30(11), 1433-1437. doi:10.1007/s11664-001-0198-5Synthesis and crystal structures of two new titanium alkoxy-diolate complexes. Potential precursors for oxide ceramics (Journal article)
Jones, A. C., Williams, P. A., Bickley, J. F., Steiner, A., Davies, H. O., Leedham, T. J., . . . Critchlow, G. W. (2001). Synthesis and crystal structures of two new titanium alkoxy-diolate complexes. Potential precursors for oxide ceramics. JOURNAL OF MATERIALS CHEMISTRY, 11(5), 1428-1433. doi:10.1039/b100411p2000
Dimethylzinc adducts with macrocyclic amines (Journal article)
Coward, K. M., Jones, A. C., Steiner, A., Bickley, J. F., Smith, L. M., & Pemble, M. E. (2000). Dimethylzinc adducts with macrocyclic amines. JOURNAL OF THE CHEMICAL SOCIETY-DALTON TRANSACTIONS, (19), 3480-3482. doi:10.1039/b006253gSynthesis of ultra-high purity trialkylgallium MOVPE precursors. Crystal structures of triethylgallium and triisopropylgallium adducts with macrocyclic tertiary amines (Journal article)
Coward, K. M., Jones, A. C., Steiner, A., Bickley, J. F., Pemble, M. E., Boag, N. M., . . . Smith, L. M. (2000). Synthesis of ultra-high purity trialkylgallium MOVPE precursors. Crystal structures of triethylgallium and triisopropylgallium adducts with macrocyclic tertiary amines. JOURNAL OF MATERIALS CHEMISTRY, 10(8), 1875-1880. doi:10.1039/b001937mAn investigation into the growth of magnesium niobium oxide and lead magnesium niobate by liquid-injection MOCVD using a magnesium-niobium alkoxide precursor (Journal article)
Davies, H. O., Jones, A. C., Leedham, T. J., Wright, P. J., Crosbie, M. J., Lane, P. A., . . . Bickley, J. F. (2000). An investigation into the growth of magnesium niobium oxide and lead magnesium niobate by liquid-injection MOCVD using a magnesium-niobium alkoxide precursor. ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS, 10(3-5), 177-182. doi:3.0.CO;2-B">10.1002/1099-0712(200005/10)10:3/5<177::AID-AMO410>3.0.CO;2-BDOI: 10.1002/1099-0712(200005/10)10:3/5<177::AID-AMO410>3.0.CO;2-B
Synthesis of oxygen-free trimethylindium using second generation adduct purification techniques (Journal article)
Coward, K. M., Jones, A. C., Bickley, J. F., Steiner, A., Smith, L. M., Ravetz, M. S., . . . Pemble, M. E. (2000). Synthesis of oxygen-free trimethylindium using second generation adduct purification techniques. JOURNAL OF CRYSTAL GROWTH, 221, 81-85. doi:10.1016/S0022-0248(00)00653-9The crystal structure of unadducted strontium <i>bis</i>-tetramethylheptanedionate:: The standard precursor for the MOCVD of strontium-containing oxides (Journal article)
Brooks, J., Davies, H. O., Leedham, T. J., Jones, A. C., & Steiner, A. (2000). The crystal structure of unadducted strontium <i>bis</i>-tetramethylheptanedionate:: The standard precursor for the MOCVD of strontium-containing oxides. CHEMICAL VAPOR DEPOSITION, 6(2), 66-+. doi:3.0.CO;2-8">10.1002/(SICI)1521-3862(200004)6:2<66::AID-CVDE66>3.0.CO;2-8DOI: 10.1002/(SICI)1521-3862(200004)6:2<66::AID-CVDE66>3.0.CO;2-8