(LO1) Properties of silicon (derivation of energy band diagram from quantum-mechanical principles, conductivity and mobility) and doping to enginner semiconductor p- or n-type
(LO2) Fundamentals on PN junction and MOS capacitor physics
(LO3) Fundamentals on MOSFET and CMOS devices (detailed understadning of device operation, regimes of operation, transfer characteristics)
(LO4) Fundamentals on CMOS fabrication technology: processing, layout and design issues
(LO5) Basic CMOS logic families
(LO6) Advanced digital CMOS circuits: pseudo n-MOS and dynamic logic principles and design issues
(LO7) Domino logic gates: principles, advantages and disadvantages
(S1) On successful completion of the module, students should be able to show experience and enhancement of the following key transferable skills: Independent learning; Problem solving; Design skills; Drawing skills and Report writing skills.
(S2) After successful completion of the module, the student should have the following practical skills: the ability to analyse and design simple CMOS logic gates and amplifier stages.
(S3) On successful completion of the module, students should be able to: demonstrate intellectual ability in applying knowledge of the above topics to determine the design consideration when working with MOS integrated circuits.
(S4) After successful completion of the module, the student should have knowledge and understanding in: Appreciation of MOS based integrated circuit design philosophy: power, speed, yield, packing density considerations and of design trade-offs associated with materials, device and circuit limitations. Appreciation of historical and future development of silicon-based integrated circuit technology. Appreciation of bipolar transistor logic gates.