Dr Tim Joyce PhD

Principal Experimental Officer Mechanical, Materials & Aerospace Eng

Publications

2018

Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells (Chapter)

Gass, M. H., Bullough, T. J., Papworth, A., Thomas, S., Joyce, T. B., Chalker, P. R., . . . Balkan, N. (2018). Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells. In Microscopy of Semiconducting Materials 2003 (pp. 225-228). doi:10.1201/9781351074636

DOI: 10.1201/9781351074636

2017

Epitaxial Crystal Growth: Methods and Materials (Chapter)

Capper, P., Irvine, S., & Joyce, T. (2017). Epitaxial Crystal Growth: Methods and Materials. In Springer Handbook of Electronic and Photonic Materials (pp. 1). Springer International Publishing. doi:10.1007/978-3-319-48933-9_14

DOI: 10.1007/978-3-319-48933-9_14

2014

Electronic structure and local distortions in epitaxial ScGaN films (Journal article)

Knoll, S. M., Rovezzi, M., Zhang, S., Joyce, T. B., & Moram, M. A. (2014). Electronic structure and local distortions in epitaxial ScGaN films. JOURNAL OF PHYSICS-CONDENSED MATTER, 26(22). doi:10.1088/0953-8984/26/22/225801

DOI: 10.1088/0953-8984/26/22/225801

Defects in epitaxial ScGaN: Dislocations, stacking faults, and cubic inclusions (Journal article)

Knoll, S. M., Rhode, S. K., Zhang, S., Joyce, T. B., & Moram, M. A. (2014). Defects in epitaxial ScGaN: Dislocations, stacking faults, and cubic inclusions. APPLIED PHYSICS LETTERS, 104(10). doi:10.1063/1.4868538

DOI: 10.1063/1.4868538

2012

Growth, microstructure and morphology of epitaxial ScGaN films (Journal article)

Knoll, S. M., Zhang, S., Joyce, T. B., Kappers, M. J., Humphreys, C. J., & Moram, M. A. (2012). Growth, microstructure and morphology of epitaxial ScGaN films. physica status solidi (a), 209(1), 33-40. doi:10.1002/pssa.201100158

DOI: 10.1002/pssa.201100158

2009

MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si (vol 310, pg 1010, 2008) (Journal article)

Black, K., Jones, A. C., Chalker, P. R., Gaskell, J. M., MurreyB, R. T., Joyce, T. B., & Rushworth, S. A. (2009). MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si (vol 310, pg 1010, 2008). JOURNAL OF CRYSTAL GROWTH, 311(23-24), 4812. doi:10.1016/j.jcrysgro.2009.09.028

DOI: 10.1016/j.jcrysgro.2009.09.028

Structural properties of wurtzitelike ScGaN films grown by NH3-molecular beam epitaxy (Journal article)

Moram, M. A., Zhang, Y., Joyce, T. B., Holec, D., Chalker, P. R., Mayrhofer, P. H., . . . Humphreys, C. J. (2009). Structural properties of wurtzitelike ScGaN films grown by NH3-molecular beam epitaxy. JOURNAL OF APPLIED PHYSICS, 106(11). doi:10.1063/1.3268466

DOI: 10.1063/1.3268466

2008

MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si (Journal article)

Black, K., Jones, A. C., Chalker, P. R., Gaskell, J. M., Murray, R. T., Joyce, T. B., & Rushworth, S. A. (2008). MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si. JOURNAL OF CRYSTAL GROWTH, 310(5), 1010-1014. doi:10.1016/j.jcrysgro.2007.11.131

DOI: 10.1016/j.jcrysgro.2007.11.131

Thermal stability of C-doped GaAs/AlAs DBR structures (Journal article)

Liang, M. S., Bullough, T. J., & Joyce, T. B. (2008). Thermal stability of C-doped GaAs/AlAs DBR structures. Solid-State Electronics, 52(8), 1256-1259. doi:10.1016/j.sse.2008.06.015

DOI: 10.1016/j.sse.2008.06.015

2007

Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer (Journal article)

Moram, M. A., Kappers, M. J., Joyce, T. B., Chalker, P. R., Barber, Z. H., & Humphreys, C. J. (2007). Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer. JOURNAL OF CRYSTAL GROWTH, 308(2), 302-308. doi:10.1016/j.jcrysgro.2007.09.009

DOI: 10.1016/j.jcrysgro.2007.09.009

2006

Epitaxial Crystal Growth: Methods and Materials (Chapter)

Joyce, T. B., Capper, P., & Irvine, S. (2006). Epitaxial Crystal Growth: Methods and Materials. In S. Kasap, & P. Capper (Eds.), Springer Handbook of Electronic and Photonic Materials (pp. 271-301). New York: Springer.

Microstructural, Optical and Elastic Properties of ScGaN Thin Films (Journal article)

Moram, M. A., Joyce, T. B., Chalker, P. R., Barber, Z. H., & Humphreys, C. J. (2006). Microstructural, Optical and Elastic Properties of ScGaN Thin Films. Mater Res Soc Symp Proc, 892, 723-727.

Microstructure and strain-free lattice parameters of ScxGa1-xN films (Conference Paper)

Moram, M. A., Joyce, T. B., Chalker, P. R., Barber, Z. H., & Humphreys, C. J. (2006). Microstructure and strain-free lattice parameters of ScxGa1-xN films. In GaN, AIN, InN and Related Materials Vol. 892 (pp. 723-727). Retrieved from http://gateway.webofknowledge.com/

Microstructure of epitaxial scandium nitride films grown on silicon (Journal article)

Moram, M. A., Joyce, T. B., Chalker, P. R., Barber, Z. H., & Humphreys, C. J. (2006). Microstructure of epitaxial scandium nitride films grown on silicon. APPLIED SURFACE SCIENCE, 252(24), 8385-8387. doi:10.1016/j.apsusc.2005.11.069

DOI: 10.1016/j.apsusc.2005.11.069

Transition from electron accumulation to depletion at InGaN surfaces (Journal article)

Veal, T. D., Jefferson, P. H., Piper, L. F. J., McConville, C. F., Joyce, T. B., Chalker, P. R., . . . Schaff, W. J. (2006). Transition from electron accumulation to depletion at InGaN surfaces. APPLIED PHYSICS LETTERS, 89(20). doi:10.1063/1.2387976

DOI: 10.1063/1.2387976

Young's modulus, Poisson's ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon (Journal article)

Moram, M. A., Barber, Z. H., Humphreys, C. J., Joyce, T. B., & Chalker, P. R. (2006). Young's modulus, Poisson's ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon. JOURNAL OF APPLIED PHYSICS, 100(2). doi:10.1063/1.2217106

DOI: 10.1063/1.2217106

2004

Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/GaAs QWs: blue shift versus red shift (Conference Paper)

Balkan, N., Mazzucato, S., Erol, A., Hepburn, C. J., Potter, R. J., Boland-Thoms, A., . . . Bullough, T. J. (2004). Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/GaAs QWs: blue shift versus red shift. In IEE PROCEEDINGS-OPTOELECTRONICS Vol. 151 (pp. 284-289). doi:10.1049/ip-opt:20040935

DOI: 10.1049/ip-opt:20040935

Basic studies of molecular beam epitaxy—past, present and some future directions (Conference Paper)

Joyce, B. A., & Joyce, T. B. (2004). Basic studies of molecular beam epitaxy—past, present and some future directions. In Journal of Crystal Growth Vol. 264 (pp. 605-619). Elsevier BV. doi:10.1016/j.jcrysgro.2003.12.045

DOI: 10.1016/j.jcrysgro.2003.12.045

Basic Studies in Molecular Beam Epitaxy, past, present & some future directions (Chapter)

Joyce, B. A., & Joyce, T. B. (2004). Basic Studies in Molecular Beam Epitaxy, past, present & some future directions. In R. Feigelson (Ed.), 50 Years Progress in Crystal Growth: A Reprint Collection (pp. 268). Amsterdam: Elsevier.

Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells (Journal article)

Gass, M. H., Bullough, T. J., Papworth, A., Thomas, S., Joyce, T. B., Chalker, P. R., . . . Balkan, N. (2003). Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells. MICROSCOPY OF SEMICONDUCTING MATERIALS 2003, (180), 225-228. Retrieved from http://gateway.webofknowledge.com/

Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices (Journal article)

Davies, S., Huang, T. S., Gass, M. H., Papworth, A. J., Joyce, T. B., & Chalker, P. R. (2004). Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices. APPLIED PHYSICS LETTERS, 84(14), 2566-2568. doi:10.1063/1.1695196

DOI: 10.1063/1.1695196

Fabrication of epitaxial III-nitride cantilevers on silicon (111) substrates (Journal article)

Davies, S., Huang, T. S., Murray, R. T., Gass, M. H., Papworth, A. J., Joyce, T. B., & Chalker, P. R. (2004). Fabrication of epitaxial III-nitride cantilevers on silicon (111) substrates. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 15(11), 705-710. doi:10.1023/B:JMSE.0000043416.67986.10

DOI: 10.1023/B:JMSE.0000043416.67986.10

Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy (Journal article)

Gass, M. H., Papworth, A. J., Joyce, T. B., Bullough, T. J., & Chalker, P. R. (2004). Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy. APPLIED PHYSICS LETTERS, 84(9), 1453-1455. doi:10.1063/1.1650906

DOI: 10.1063/1.1650906

The microstructural influence of nitrogen incorporation in dilute nitride semiconductors (Journal article)

Chalker, P. R., Bullough, T. J., Gass, M., Thomas, S., & Joyce, T. B. (2004). The microstructural influence of nitrogen incorporation in dilute nitride semiconductors. JOURNAL OF PHYSICS-CONDENSED MATTER, 16(31), S3161-S3170. doi:10.1088/0953-8984/16/31/012

DOI: 10.1088/0953-8984/16/31/012

Thermal stability of hafnium silicate dielectric films deposited by a dual source liquid injection MOCVD (Journal article)

Chalker, P. R., Marshall, P. A., Potter, R. J., Joyce, T. B., Jones, A. C., Taylor, S., . . . Bailey, P. (2004). Thermal stability of hafnium silicate dielectric films deposited by a dual source liquid injection MOCVD. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 15(11), 711-714. doi:10.1023/B:JMSE.0000043417.59029.d6

DOI: 10.1023/B:JMSE.0000043417.59029.d6

2003

(Conference Paper)

Joyce, T. B. (2003). Unknown Title. In Journal of Materials Science: Materials in Electronics Vol. 14 (pp. 551-553). Springer Nature. doi:10.1023/a:1024541617896

DOI: 10.1023/a:1024541617896

Effect of increased nitrogen incorporation on the growth of GaInNAs/GaAs (Journal article)

Bullough, T. J., Davies, S., Thomas, S., Joyce, T. B., & Chalker, P. R. (2003). Effect of increased nitrogen incorporation on the growth of GaInNAs/GaAs. SOLID-STATE ELECTRONICS, 47(3), 407-412. doi:10.1016/S0038-1101(02)00380-5

DOI: 10.1016/S0038-1101(02)00380-5

In-plane photovoltaic and photoconductive effects on GaInAs and GaInNAs double quantum well structures (Journal article)

Akcay, N., Erol, A., Arikan, M. C., Mazzucato, S., Chalker, P. R., & Joyce, T. B. (2003). In-plane photovoltaic and photoconductive effects on GaInAs and GaInNAs double quantum well structures. IEE PROCEEDINGS-OPTOELECTRONICS, 150(1), 96-98. doi:10.1049/ip-opt:20030043

DOI: 10.1049/ip-opt:20030043

Medium energy ion scattering studies of as-grown and annealed GaInNAs/GaAs quantum well (Journal article)

White, S. L., Thomas, S., Joyce, T. B., Bullough, T. J., Chalker, P. R., Noakes, T. C. Q., . . . Balkan, N. (2003). Medium energy ion scattering studies of as-grown and annealed GaInNAs/GaAs quantum well. SOLID-STATE ELECTRONICS, 47(3), 425-429. doi:10.1016/S0038-1101(02)00383-0

DOI: 10.1016/S0038-1101(02)00383-0

Optical properties of GaInNAs/GaAs quantum wells (Journal article)

Mazzucato, S., Erol, A., Potter, R. J., Balkan, N., Chalker, P. R., Thomas, S., . . . Bullough, T. J. (2003). Optical properties of GaInNAs/GaAs quantum wells. SOLID-STATE ELECTRONICS, 47(3), 483-487. doi:10.1016/S0038-1101(02)00394-5

DOI: 10.1016/S0038-1101(02)00394-5

S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides (Journal article)

Mazzucato, S., Potter, R. J., Erol, A., Balkan, N., Chalker, P. R., Joyce, T. B., . . . Fontaine, C. (2003). S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17(1-4), 242-244. doi:10.1016/S1386-9477(02)00783-X

DOI: 10.1016/S1386-9477(02)00783-X

2002

Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit (Journal article)

Thomas, S., White, S., Chalker, P. R., Bullough, T. J., & Joyce, T. B. (2002). Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 13(9), 525-529. doi:10.1023/A:1019641611417

DOI: 10.1023/A:1019641611417

Chemical beam epitaxy of GaN on Si (111) using AlAs butter layers (Journal article)

Huang, T. S., Joyce, T. B., Murray, R. T., Papworth, A. J., & Chalker, P. R. (2002). Chemical beam epitaxy of GaN on Si (111) using AlAs butter layers. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 35(7), 620-624. doi:10.1088/0022-3727/35/7/309

DOI: 10.1088/0022-3727/35/7/309

Compositional variation in as-grown GaInNAs/GaAs quantum well structures (Journal article)

Chalker, P. R., Davock, H., Thomas, S., Joyce, T. B., Bullough, T. J., Potter, R. J., & Balkan, N. (2001). Compositional variation in as-grown GaInNAs/GaAs quantum well structures. JOURNAL OF CRYSTAL GROWTH, 233(1-2), 1-4. doi:10.1016/S0022-0248(01)01535-4

DOI: 10.1016/S0022-0248(01)01535-4

Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit (Journal article)

Thomas, S., White, S., Chalker, P. R., Bullough, T. J., & Joyce, T. B. (2002). Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit. J. Mater. Sci.-Mater. In Electronics, 13(9)(9), 525-529.

Optical characterization of GaInNAs (Conference Paper)

Potter, R. J., Mazzucato, S., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2001). Optical characterization of GaInNAs. In PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IX Vol. 4283 (pp. 638-644). doi:10.1117/12.432617

DOI: 10.1117/12.432617

2001

Composition-variations and phase-segregation in InGaAsN grown by CBE (Journal article)

Thomas, S., Bullough, T. J., Joyce, T. B., Zheng, J. G., & Chalker, P. R. (2001). Composition-variations and phase-segregation in InGaAsN grown by CBE. MICROSCOPY OF SEMICONDUCTING MATERIALS 2001, (169), 123-126. Retrieved from http://gateway.webofknowledge.com/

The effect of In/N ratio on the optical quality and lasing threshold in GaxIn1-xAs1-yNy/GaAs laser structures (Journal article)

Potter, R., Mazzucato, S., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2001). The effect of In/N ratio on the optical quality and lasing threshold in GaxIn1-xAs1-yNy/GaAs laser structures. SUPERLATTICES AND MICROSTRUCTURES, 29(2), 169-186. doi:10.1006/spmi.2000.0967

DOI: 10.1006/spmi.2000.0967

2000

Indium segregation in MOCVD InGaN layers studied by medium energy ion scattering (Journal article)

Chalker, P. R., Morrice, D., Joyce, T. B., Noakes, T. C. Q., Bailey, P., & Considine, L. (2000). Indium segregation in MOCVD InGaN layers studied by medium energy ion scattering. DIAMOND AND RELATED MATERIALS, 9(3-6), 520-523. doi:10.1016/S0925-9635(99)00259-9

DOI: 10.1016/S0925-9635(99)00259-9

Investigation of electromechanical distortions in gallium nitride by reflectance anisotropy spectroscopy (Journal article)

Morrice, D. E., Farrell, T., Joyce, T. B., & Chalker, P. R. (2000). Investigation of electromechanical distortions in gallium nitride by reflectance anisotropy spectroscopy. DIAMOND AND RELATED MATERIALS, 9(3-6), 460-463. doi:10.1016/S0925-9635(99)00282-4

DOI: 10.1016/S0925-9635(99)00282-4

Photoluminescence in Ga0.85In0.15As0.99N0.01/GaAs single quantum wells: Effect of low temperature heat treatment in N2 (Conference Paper)

Potter, R. J., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2000). Photoluminescence in Ga0.85In0.15As0.99N0.01/GaAs single quantum wells: Effect of low temperature heat treatment in N2. In Proceedings of SPIE - The International Society for Optical Engineering Vol. 3944.

Studies into the carbon doping of GaAs, AlGaAs and AlAs grown by CBE using neopentyl iodide (Journal article)

Coward, K. M., Jones, A. C., Pemble, M. E., Joyce, T. B., & Smith, L. M. (2000). Studies into the carbon doping of GaAs, AlGaAs and AlAs grown by CBE using neopentyl iodide. Journal of Crystal Growth, 209(2-3), 286-289. doi:10.1016/s0022-0248(99)00556-4

DOI: 10.1016/s0022-0248(99)00556-4

1999

Fabrication of aluminium nitride diamond and gallium nitride diamond SAW devices (Conference Paper)

Chalker, P. R., Joyce, T. B., Johnston, C., Crossley, J. A. A., Huddlestone, J., Whitfield, M. D., & Jackman, R. B. (1999). Fabrication of aluminium nitride diamond and gallium nitride diamond SAW devices. In DIAMOND AND RELATED MATERIALS Vol. 8 (pp. 309-313). doi:10.1016/S0925-9635(98)00263-5

DOI: 10.1016/S0925-9635(98)00263-5

Comparison of in situ optical reflectance and post-growth characterisation for quantitative composition and thickness determination of AlxGa1-xAs (Journal article)

Jothilingam, R., Farrell, T., Joyce, T. B., Bullough, T. J., & Goodhew, P. J. (1999). Comparison of in situ optical reflectance and post-growth characterisation for quantitative composition and thickness determination of AlxGa1-xAs. Vacuum, 53(1-2), 7-10. doi:10.1016/s0042-207x(98)00411-4

DOI: 10.1016/s0042-207x(98)00411-4

Metalorganic molecular beam epitaxy of GaN and Al(Ga)N on GaAs(001) studied using laser reflectometry and reflectance anisotropy spectroscopy (Journal article)

Joyce, T. B., Chalker, P. R., & Farrell, T. (1999). Metalorganic molecular beam epitaxy of GaN and Al(Ga)N on GaAs(001) studied using laser reflectometry and reflectance anisotropy spectroscopy. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 10(8), 585-588. doi:10.1023/A:1008909008317

DOI: 10.1023/A:1008909008317

Optical reflectivity studies of GaN and AlN chemical beam epitaxy on GaAs(100) (Journal article)

Chalker, P. R., Joyce, T. B., & Farrell, T. (1999). Optical reflectivity studies of GaN and AlN chemical beam epitaxy on GaAs(100). DIAMOND AND RELATED MATERIALS, 8(2-5), 373-376. doi:10.1016/S0925-9635(98)00374-4

DOI: 10.1016/S0925-9635(98)00374-4

Raman and reflection anisotropy spectroscopic studies of GaN and AlN growth on GaAs(100) (Journal article)

Chalker, P. R., Joyce, T. B., Farrell, T., Johnston, C., Crossley, A., & Eccles, J. (1999). Raman and reflection anisotropy spectroscopic studies of GaN and AlN growth on GaAs(100). THIN SOLID FILMS, 343, 575-578. doi:10.1016/S0040-6090(98)01723-4

DOI: 10.1016/S0040-6090(98)01723-4

1998

A comparison of the transitory periods in GaAs and AlGaAs CBE growth (Journal article)

Hill, D., Farrell, T., Joyce, T. B., & Bullough, T. J. (1998). A comparison of the transitory periods in GaAs and AlGaAs CBE growth. Journal of Crystal Growth, 188(1-4), 21-25. doi:10.1016/s0022-0248(98)00062-1

DOI: 10.1016/s0022-0248(98)00062-1

Low-temperature laser assisted CBE-growth of AlGaAs (Journal article)

Jothilingam, R., Farrell, T., Joyce, T. B., & Goodhew, P. J. (1998). Low-temperature laser assisted CBE-growth of AlGaAs. Journal of Crystal Growth, 188(1-4), 39-44. doi:10.1016/s0022-0248(98)00085-2

DOI: 10.1016/s0022-0248(98)00085-2

Reflectance anisotropy spectroscopy studies of the growth of carbon-doped GaAs by chemical beam epitaxy (Journal article)

Joyce, T. B., Farrell, T., & Davidson, B. R. (1998). Reflectance anisotropy spectroscopy studies of the growth of carbon-doped GaAs by chemical beam epitaxy. Journal of Crystal Growth, 188(1-4), 211-219. doi:10.1016/s0022-0248(98)00051-7

DOI: 10.1016/s0022-0248(98)00051-7

1997

Carbon delta doping in chemical beam epitaxy using CBr4 (Journal article)

Joyce, T. B., Bullough, T. J., Farrell, T., Davidson, B. R., Sykes, D. E., & Chew, A. (1997). Carbon delta doping in chemical beam epitaxy using CBr4. Journal of Crystal Growth, 175-176, 377-382. doi:10.1016/s0022-0248(96)00957-8

DOI: 10.1016/s0022-0248(96)00957-8

Di-Carbon Defects in Annealed Highly Carbon Doped GaAs (Journal article)

Wagner, J., Newman, R. C., Davidson, B. R., Westwater, S. P., Bullough, T. J., Joyce, T. B., . . . Öberg, S. (n.d.). Di-Carbon Defects in Annealed Highly Carbon Doped GaAs. Physical Review Letters, 78(1), 74-77. doi:10.1103/physrevlett.78.74

DOI: 10.1103/physrevlett.78.74

The suppression of misfit dislocation introduction in heavily carbon doped GaAs (Journal article)

Westwater, S. P., Bullough, T. J., Joyce, T. B., Davidson, B. R., & Hart, L. (1997). The suppression of misfit dislocation introduction in heavily carbon doped GaAs. Applied Physics Letters, 70(1), 60-62. doi:10.1063/1.119306

DOI: 10.1063/1.119306

Transient surface states during the CBE growth of GaAs (Journal article)

Farrell, T., Hill, D., Joyce, T. B., Bullough, T. J., & Weightman, P. (1997). Transient surface states during the CBE growth of GaAs. Journal of Crystal Growth, 175-176, 1217-1222. doi:10.1016/s0022-0248(96)00962-1

DOI: 10.1016/s0022-0248(96)00962-1

1996

A calibration of the H-CAs stretch mode in GaAs (Journal article)

Davidson, B. R., Newman, R. C., Joyce, T. B., & Bullough, T. J. (1996). A calibration of the H-CAs stretch mode in GaAs. Semiconductor Science and Technology, 11(3), 455-457.

An in-situ laser-light scattering study of the development of surface topography during GaAs and InxGa1 − xAs chemical beam epitaxy (Journal article)

Boyd, A. R., Joyce, T. B., & Beanland, R. (1996). An in-situ laser-light scattering study of the development of surface topography during GaAs and InxGa1 − xAs chemical beam epitaxy. Journal of Crystal Growth, 164(1-4), 51-57. doi:10.1016/0022-0248(95)01074-2

DOI: 10.1016/0022-0248(95)01074-2

Characterization of carbon delta-doping GaAs superlattices grown by chemical beam epitaxy using CBr4 (Journal article)

Davidson, B. R., Hart, L., Newman, R. C., Joyce, T. B., & Bullough, T. J. (1996). Characterization of carbon delta-doping GaAs superlattices grown by chemical beam epitaxy using CBr4. Journal of Crystal Growth, 164(1-4), 383-388. doi:10.1016/0022-0248(96)00034-6

DOI: 10.1016/0022-0248(96)00034-6

Growth mechanisms and morphology of Ar+ laser assisted CBE of GaAs (Journal article)

Boyd, A. R., Bullough, T. J., Farrell, T., & Joyce, T. B. (1996). Growth mechanisms and morphology of Ar+ laser assisted CBE of GaAs. Journal of Crystal Growth, 164(1-4), 71-76. doi:10.1016/0022-0248(96)00007-3

DOI: 10.1016/0022-0248(96)00007-3

Growth of carbon-doped GaAs, AlGaAs and InGaAs by chemical beam epitaxy and the application of in-situ monitoring (Journal article)

Joyce, T. B., Westwater, S. P., Goodhew, P. J., & Pritchard, R. E. (1996). Growth of carbon-doped GaAs, AlGaAs and InGaAs by chemical beam epitaxy and the application of in-situ monitoring. Journal of Crystal Growth, 164(1-4), 371-376. doi:10.1016/0022-0248(96)00019-x

DOI: 10.1016/0022-0248(96)00019-x

Sulphur doping of InGaAs using diethylsulphide (Journal article)

Petkos, G. M., Goodhew, P. J., & Joyce, T. B. (1996). Sulphur doping of InGaAs using diethylsulphide. Journal of Crystal Growth, 164(1-4), 415-419. doi:10.1016/0022-0248(96)00030-9

DOI: 10.1016/0022-0248(96)00030-9

The bonding of CAsacceptors in InxGa1−xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon (Journal article)

Ashwin, M. J., Pritchard, R. E., Newman, R. C., Joyce, T. B., Bullough, T. J., Wagner, J., . . . Öberg, S. (1996). The bonding of CAsacceptors in InxGa1−xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon. Journal of Applied Physics, 80(12), 6754-6760. doi:10.1063/1.363803

DOI: 10.1063/1.363803

1995

A study of surface cross-hatch and misfit dislocation structure in grown by chemical beam epitaxy (Journal article)

Beanland, R., Aindow, M., Joyce, T. B., Kidd, P., Lourenço, M., & Goodhew, P. J. (1995). A study of surface cross-hatch and misfit dislocation structure in grown by chemical beam epitaxy. Journal of Crystal Growth, 149(1-2), 1-11. doi:10.1016/0022-0248(94)00669-5

DOI: 10.1016/0022-0248(94)00669-5

Dynamics of the H-CAscomplex in GaAs determined from Raman measurements (Journal article)

Wagner, J., Bachem, K. H., Davidson, B. R., Newman, R. C., Bullough, T. J., & Joyce, T. B. (n.d.). Dynamics of the H-CAscomplex in GaAs determined from Raman measurements. Physical Review B, 51(7), 4150-4158. doi:10.1103/physrevb.51.4150

DOI: 10.1103/physrevb.51.4150

In-situ monitoring of carbon doped GaAs and of periodic carbon doped structures grown by chemical beam epitaxy (Journal article)

Joyce, T. B., Bullough, T. J., & Westwater, S. (1995). In-situ monitoring of carbon doped GaAs and of periodic carbon doped structures grown by chemical beam epitaxy. Journal of Crystal Growth, 146(1-4), 394-398. doi:10.1016/0022-0248(94)00493-5

DOI: 10.1016/0022-0248(94)00493-5

Raman spectroscopic study of the H-CAscomplex in epitaxial AlAs (Journal article)

Wagner, J., Pritchard, R. E., Davidson, B. R., Newman, R. C., Bullough, T. J., Joyce, T. B., . . . Roberts, J. S. (1995). Raman spectroscopic study of the H-CAscomplex in epitaxial AlAs. Semiconductor Science and Technology, 10(5), 639-644. doi:10.1088/0268-1242/10/5/012

DOI: 10.1088/0268-1242/10/5/012

The use of diethylsulphide for the doping of Al Ga1−As grown by chemical beam epitaxy (Journal article)

Pfeffer, T. L., Bullough, T. J., Joyce, T. B., & Jones, A. C. (1995). The use of diethylsulphide for the doping of Al Ga1−As grown by chemical beam epitaxy. Journal of Crystal Growth, 146(1-4), 399-403. doi:10.1016/0022-0248(94)00492-7

DOI: 10.1016/0022-0248(94)00492-7

The use of diethylsulphide for the doping of GaAs, AlGaAs and InGaAs grown by chemical beam epitaxy (Journal article)

Joyce, T. B., Pfeffer, T. L., Bullough, T. J., Petkos, G., Goodhew, P. J., & Jones, A. C. (1995). The use of diethylsulphide for the doping of GaAs, AlGaAs and InGaAs grown by chemical beam epitaxy. Journal of Crystal Growth, 150, 644-648. doi:10.1016/0022-0248(95)80288-n

DOI: 10.1016/0022-0248(95)80288-n

1994

The structure and vibrational modes of H-CAspairs in passivated AlAs grown by chemical beam epitaxy (Journal article)

Pritchard, R. E., Davidson, B. R., Newman, R. C., Bullough, T. J., Joyce, T. B., Jones, R., & Oberg, S. (1994). The structure and vibrational modes of H-CAspairs in passivated AlAs grown by chemical beam epitaxy. Semiconductor Science and Technology, 9(2), 140-149. doi:10.1088/0268-1242/9/2/003

DOI: 10.1088/0268-1242/9/2/003

Growth of GaAs on Si(001) by CBE using TEG and AsH3 (Journal article)

Xing, Y., Joyce, T. B., Kiely, C. J., & Goodhew, P. J. (1994). Growth of GaAs on Si(001) by CBE using TEG and AsH3. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 15(4), 229-234.

Hydrogen passivated carbon acceptors in GaAs and AlAs: No evidence for carbon donors (Journal article)

Davidson, B. R., Newman, R. C., Pritchard, R. E., Bullough, T. J., Joyce, T. B., Jones, R., & Oberg, S. (1994). Hydrogen passivated carbon acceptors in GaAs and AlAs: No evidence for carbon donors. Materials Research Society Symposium Proceedings, 325, 241-246.

Metalorganic sulphur sources for the doping of GaAs grown by chemical beam epitaxy (Journal article)

Joyce, T. B., Pfeffer, T., Bullough, T. J., & Jones, A. C. (1994). Metalorganic sulphur sources for the doping of GaAs grown by chemical beam epitaxy. Journal of Crystal Growth, 135(1-2), 31-35. doi:10.1016/0022-0248(94)90722-6

DOI: 10.1016/0022-0248(94)90722-6

Optical monitoring of the growth of heavily doped GaAs by chemical beam epitaxy and of the in situ etching of GaAs using CBr4 (Journal article)

Joyce, T. B., Bullough, T. J., & Farrell, T. (1994). Optical monitoring of the growth of heavily doped GaAs by chemical beam epitaxy and of the in situ etching of GaAs using CBr4. Applied Physics Letters, 65(17), 2193-2195. doi:10.1063/1.112759

DOI: 10.1063/1.112759

1993

Carbon acceptors passivated with hydrogen and the search for carbon donors in highly doped GaAs:C (Journal article)

Ashwin, M. J., Davidson, B. R., Woodhouse, K., Newman, R. C., Bullough, T. J., Joyce, T. B., . . . Bradley, R. R. (1993). Carbon acceptors passivated with hydrogen and the search for carbon donors in highly doped GaAs:C. Semiconductor Science and Technology, 8(5), 625-629. doi:10.1088/0268-1242/8/5/001

DOI: 10.1088/0268-1242/8/5/001

Growth of high quality gallium arsenide on HF‐etched silicon (001) by chemical beam epitaxy (Journal article)

Xing, Y. R., Jamal, Z., Joyce, T. B., Bullough, T. J., Kiely, C. J., & Goodhew, P. J. (1993). Growth of high quality gallium arsenide on HF‐etched silicon (001) by chemical beam epitaxy. Applied Physics Letters, 62(14), 1653-1655. doi:10.1063/1.108616

DOI: 10.1063/1.108616

Orientations and morphology of Al layers grown on GaAs by chemical beam epitaxy (Journal article)

Sun, D., Beanland, R., Joyce, T. B. F., Armstrong, J. V., Bullough, T. J., & Goodhew, P. J. (1993). Orientations and morphology of Al layers grown on GaAs by chemical beam epitaxy. Journal of Crystal Growth, 132(3-4), 592-598. doi:10.1016/0022-0248(93)90086-c

DOI: 10.1016/0022-0248(93)90086-c

Beam equivalent pressure measurements in chemical beam epitaxy (Journal article)

Joyce, T. B., & Bullough, T. J. (1993). Beam equivalent pressure measurements in chemical beam epitaxy. Journal of Crystal Growth, 127(1-4), 265-269. doi:10.1016/0022-0248(93)90619-8

DOI: 10.1016/0022-0248(93)90619-8

Dynamics of the H-CAscomplex in GaAs (Journal article)

Davidson, B. R., Newman, R. C., Bullough, T. J., & Joyce, T. B. (n.d.). Dynamics of the H-CAscomplex in GaAs. Physical Review B, 48(23), 17106-17113. doi:10.1103/physrevb.48.17106

DOI: 10.1103/physrevb.48.17106

Hydrogen wag modes and transverse carbon modes of H-CAscomplexes in GaAs doped with12C or13C (Journal article)

Davidson, B. R., Newman, R. C., Bullough, T. J., & Joyce, T. B. (1993). Hydrogen wag modes and transverse carbon modes of H-CAscomplexes in GaAs doped with12C or13C. Semiconductor Science and Technology, 8(9), 1783-1785. doi:10.1088/0268-1242/8/9/021

DOI: 10.1088/0268-1242/8/9/021

Microstructure of GaAs grown by excimer laser-assisted chemical beam epitaxy (Journal article)

Farrell, T., Armstrong, J. V., Beanland, R., Bullough, T. J., Joyce, T. B., & Goodhew, P. J. (1993). Microstructure of GaAs grown by excimer laser-assisted chemical beam epitaxy. Semiconductor Science and Technology, 8(6), 1112-1117. doi:10.1088/0268-1242/8/6/019

DOI: 10.1088/0268-1242/8/6/019

Surface morphology of photo-assisted chemical beam epitaxial growth of gallium arsenide (Journal article)

Farrell, T., Armstrong, J. V., Bullough, T. J., Beanland, R., Joyce, T. B., & Goodhew, P. J. (1993). Surface morphology of photo-assisted chemical beam epitaxial growth of gallium arsenide. Journal of Crystal Growth, 127(1-4), 148-151. doi:10.1016/0022-0248(93)90594-m

DOI: 10.1016/0022-0248(93)90594-m

The Growth of GaAs and AlGaAs by Chemical Beam Epitaxy (Thesis / Dissertation)

Joyce, T. B. F. (1993). The Growth of GaAs and AlGaAs by Chemical Beam Epitaxy. (PhD Thesis, The University of Liverpool).

Use of a silicon strip doping source in chemical beam epitaxy (Journal article)

Joyce, T. B., & Bullough, T. J. (1993). Use of a silicon strip doping source in chemical beam epitaxy. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 11(5), 2865-2866. doi:10.1116/1.578658

DOI: 10.1116/1.578658

1992

CBE growth of GaAs/GaAs, GaAs/Si and AlGaAs/GaAs using TEG, AsH3 and amine-alane precursors (Journal article)

Joyce, T. B., Bullough, T. J., Kightley, P., Kiely, C. J., Xing, Y. R., & Goodhew, P. J. (1992). CBE growth of GaAs/GaAs, GaAs/Si and AlGaAs/GaAs using TEG, AsH3 and amine-alane precursors. Journal of Crystal Growth, 120(1-4), 206-211. doi:10.1016/0022-0248(92)90392-v

DOI: 10.1016/0022-0248(92)90392-v

High resolution transmission electron microscopy study of a GaAs/Si heterostructure grown by chemical beam epitaxy (Journal article)

Xing, Y. R., Devenish, R. W., Joyce, T. B. F., Kiely, C. J., Bullough, T. J., & Goodhew, P. J. (1992). High resolution transmission electron microscopy study of a GaAs/Si heterostructure grown by chemical beam epitaxy. Applied Physics Letters, 60(5), 616-618. doi:10.1063/1.106571

DOI: 10.1063/1.106571

Monitoring real-time CBE growth of GaAs and AlGaAs using dynamic optical reflectivity (Journal article)

Armstrong, J. V., Farrell, T., Joyce, T. B., Kightley, P., Bullough, T. J., & Goodhew, P. J. (1992). Monitoring real-time CBE growth of GaAs and AlGaAs using dynamic optical reflectivity. Journal of Crystal Growth, 120(1-4), 84-87. doi:10.1016/0022-0248(92)90368-s

DOI: 10.1016/0022-0248(92)90368-s

XeCl excimer laser assisted CBE growth of GaAs (Journal article)

Fareell, T., Armstrong, J. V., Joyce, T. B., Bullough, T. J., Kightley, P., & Goodhew, P. J. (1992). XeCl excimer laser assisted CBE growth of GaAs. Journal of Crystal Growth, 120(1-4), 395-398. doi:10.1016/0022-0248(92)90424-h

DOI: 10.1016/0022-0248(92)90424-h

1990

An integrated safety system for CBE (Journal article)

Joyce, T. B. (1990). An integrated safety system for CBE. Journal of Crystal Growth, 105(1-4), 299-305. doi:10.1016/0022-0248(90)90378-x

DOI: 10.1016/0022-0248(90)90378-x