Dr Richard Potter MPhys (hons), MInstP, PhD

Senior Lecturer Materials, Design and Manufacturing Eng

Work email Rjpott@liverpool.ac.uk

Publications

Selected Publications

LiNi0.5Mn1.5O4 Cathode Microstructure for All-Solid-State Batteries (Journal article - 2022)
ULTRARAM: Toward the Development of a III-V Semiconductor, Nonvolatile, Random Access Memory (Journal article - 2021)
Directing the mechanism of CO2 reduction by a Mn catalyst through surface immobilization (Journal article - 2018)
Stable Ta2O5 Overlayers on Hematite for Enhanced Photoelectrochemical Water Splitting Efficiencies (Journal article - 2018)
Core Levels, Band Alignments, and Valence-Band States in CuSbS2 for Solar Cell Applications (Journal article - 2017)
The influence of tertiary butyl hydrazine as a co-reactant on the atomic layer deposition of silver (Journal article - 2017)
Atomic Layer Deposition of a Silver Nanolayer on Advanced Titanium Orthopedic Implants Inhibits Bacterial Colonization and Supports Vascularized de Novo Bone Ingrowth (Journal article - 2017)
Oxygen Deficient α-Fe2O3Photoelectrodes: A Balance Between Enhanced Electrical Properties and Trap-Mediated Losses (Journal article - 2015)
Atomic layer deposition of TaN and Ta3N5 using pentakis(dimethylamino) tantalum and either ammonia or monomethylhydrazine (Journal article - 2011)
Deposition of HfO2, Gd2O3 and PrOx by liquid injection ALD techniques (Journal article - 2005)

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2022

LiNi0.5Mn1.5O4 Cathode Microstructure for All-Solid-State Batteries (Journal article)

Lee, H. J., Liu, X., Chart, Y., Tang, P., Bae, J. -G., Narayanan, S., . . . Pasta, M. (2022). LiNi0.5Mn1.5O4 Cathode Microstructure for All-Solid-State Batteries. NANO LETTERS. doi:10.1021/acs.nanolett.2c02426

DOI: 10.1021/acs.nanolett.2c02426

LiNi0.5Mn1.5O4 cathode microstructure for all-solid-state batteries (Preprint)

DOI: 10.26434/chemrxiv-2022-39d3d

Performance of a flat-plate polymeric pulsating heat pipe: effect of aluminium oxide coating (Conference Paper)

Alqahtani, A., Potter, R., Edwardson, S., Marengo, M., & Bertola, V. (2022). Performance of a flat-plate polymeric pulsating heat pipe: effect of aluminium oxide coating. In 39th UIT National Heat Transfer Conference. Gaeta (Italy).

2021

Demonstration of a Fast, Low-voltage, III-V Semiconductor, Non-volatile Memory (Conference Paper)

Lane, D., Hodgson, P., Potter, R., & Hayne, M. (2021). Demonstration of a Fast, Low-voltage, III-V Semiconductor, Non-volatile Memory. In 2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM). doi:10.1109/EDTM50988.2021.9420825

DOI: 10.1109/EDTM50988.2021.9420825

ULTRARAM: Toward the Development of a III-V Semiconductor, Nonvolatile, Random Access Memory (Journal article)

Lane, D., Hodgson, P. D., Potter, R. J., Beanland, R., & Hayne, M. (2021). ULTRARAM: Toward the Development of a III-V Semiconductor, Nonvolatile, Random Access Memory. IEEE Transactions on Electron Devices, 1-4. doi:10.1109/ted.2021.3064788

DOI: 10.1109/ted.2021.3064788

2020

Femtosecond laser micro-structuring of amorphous polyether(ether)ketone at 775 nm and 387 nm (Journal article)

Li, Q., Perrie, W., Potter, R., Allegre, O., Li, Z., Tang, Y., . . . Dearden, G. (2020). Femtosecond laser micro-structuring of amorphous polyether(ether)ketone at 775 nm and 387 nm. Journal of Physics D: Applied Physics, 53(36), 365301. doi:10.1088/1361-6463/ab8ed8

DOI: 10.1088/1361-6463/ab8ed8

(Invited) Band Line-up of High-k Oxides on GaN (Journal article)

Mitrovic, I. Z., Das, P., Jones, L., Gibbon, J., Dhanak, V. R., Mahapatra, R., . . . Thayne, I. G. (2020). (Invited) Band Line-up of High-k Oxides on GaN. ECS Meeting Abstracts, MA2020-01(15), 1043. doi:10.1149/ma2020-01151043mtgabs

DOI: 10.1149/ma2020-01151043mtgabs

(Invited) Band Line-up of High-k Oxides on GaN (Journal article)

Mitrovic, I. Z., Das, P., Jones, L., Gibbon, J., Dhanak, V. R., Mahapatra, R., . . . Thayne, I. G. (2020). (Invited) Band Line-up of High-k Oxides on GaN. ECS Transactions, 97(1), 67-81. doi:10.1149/09701.0067ecst

DOI: 10.1149/09701.0067ecst

Band Line-up Investigation of Atomic Layer Deposited TiAlO and GaAlO on GaN (Journal article)

Das, P., Jones, L. A. H., Gibbon, J. T., Dhanak, V. R., Partida-Manzanera, T., Roberts, J. W., . . . Mitrovic, I. Z. (2020). Band Line-up Investigation of Atomic Layer Deposited TiAlO and GaAlO on GaN. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 9(6). doi:10.1149/2162-8777/aba4f4

DOI: 10.1149/2162-8777/aba4f4

2019

Band Alignments, Band Gap, Core Levels, and Valence Band States in Cu3BiS3 for Photovoltaics (Journal article)

Whittles, T. J., Veal, T. D., Savory, C. N., Yates, P. J., Murgatroyd, P. A. E., Gibbon, J. T., . . . Dhanak, V. R. (2019). Band Alignments, Band Gap, Core Levels, and Valence Band States in Cu3BiS3 for Photovoltaics. ACS APPLIED MATERIALS & INTERFACES, 11(30), 27033-27047. doi:10.1021/acsami.9b04268

DOI: 10.1021/acsami.9b04268

Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (Journal article)

Partida-Manzanera, T., Zaidi, Z. H., Roberts, J. W., Dolmanan, S. B., Lee, K. B., Houston, P. A., . . . Potter, R. J. (2019). Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors. JOURNAL OF APPLIED PHYSICS, 126(3). doi:10.1063/1.5049220

DOI: 10.1063/1.5049220

2018

Directing the mechanism of CO2 reduction by a Mn catalyst through surface immobilization (Journal article)

Walsh, J. J., Forster, M., Smith, C. L., Neri, G., Potter, R. J., & Cowan, A. J. (2018). Directing the mechanism of CO2 reduction by a Mn catalyst through surface immobilization. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 20(10), 6811-6816. doi:10.1039/c7cp08537k

DOI: 10.1039/c7cp08537k

Elucidation of ALD MgZnO deposition processes using low energy ion scattering (Journal article)

Werner, M., Roberts, J. W., Potter, R. J., Dawson, K., & Chalker, P. R. (2018). Elucidation of ALD MgZnO deposition processes using low energy ion scattering. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(2). doi:10.1116/1.5015958

DOI: 10.1116/1.5015958

Stable Ta2O5 Overlayers on Hematite for Enhanced Photoelectrochemical Water Splitting Efficiencies (Journal article)

Forster, M., Potter, R. J., Yang, Y., Li, Y., & Cowan, A. J. (2018). Stable Ta2O5 Overlayers on Hematite for Enhanced Photoelectrochemical Water Splitting Efficiencies. ChemPhotoChem, 2(3), 183-189. doi:10.1002/cptc.201700156

DOI: 10.1002/cptc.201700156

2017

Core Levels, Band Alignments, and Valence-Band States in CuSbS2 for Solar Cell Applications (Journal article)

Whittles, T. J., Veal, T. D., Savory, C. N., Welch, A. W., Lucas, F. W. D. S., Gibbon, J. T., . . . Dhanak, V. R. (2017). Core Levels, Band Alignments, and Valence-Band States in CuSbS2 for Solar Cell Applications. ACS APPLIED MATERIALS & INTERFACES, 9(48), 41916-41926. doi:10.1021/acsami.7b14208

DOI: 10.1021/acsami.7b14208

Enhanced Switching Stability in Ta2O5 Resistive RAM by Fluorine Doping (Journal article)

Sedghi, N., Li, H., Brunell, I. F., Dawson, K., Guo, Y., Potter, R. J., . . . Chalker, P. R. (2017). Enhanced Switching Stability in Ta2O5 Resistive RAM by Fluorine Doping. Applied Physics Letters, 111(9). doi:10.1063/1.4991879

DOI: 10.1063/1.4991879

Biotransformation of Silver Released from Nanoparticle Coated Titanium Implants Revealed in Regenerating Bone (Journal article)

Geng, H., Poologasundarampillai, G., Todd, N., Devlin-Mullin, A., Moore, K. L., Golrokhi, Z., . . . others. (2017). Biotransformation of Silver Released from Nanoparticle Coated Titanium Implants Revealed in Regenerating Bone. ACS applied materials & interfaces, 9(25), 21169-21180. doi:10.1021/acsami.7b05150

DOI: 10.1021/acsami.7b05150

The influence of tertiary butyl hydrazine as a co-reactant on the atomic layer deposition of silver (Journal article)

Golrokhi, Z., Marshall, P. A., Romani, S., Rushworth, S., Chalker, P. R., & Potter, R. J. (2017). The influence of tertiary butyl hydrazine as a co-reactant on the atomic layer deposition of silver. Applied Surface Science, 399, 123-131. doi:10.1016/j.apsusc.2016.11.192

DOI: 10.1016/j.apsusc.2016.11.192

Atomic Layer Deposition of a Silver Nanolayer on Advanced Titanium Orthopedic Implants Inhibits Bacterial Colonization and Supports Vascularized de Novo Bone Ingrowth (Journal article)

Devlin-Mullin, A., Todd, N. M., Golrokhi, Z., Geng, H., Konerding, M. A., Ternan, N. G., . . . Mitchell, C. A. (2017). Atomic Layer Deposition of a Silver Nanolayer on Advanced Titanium Orthopedic Implants Inhibits Bacterial Colonization and Supports Vascularized de Novo Bone Ingrowth. Advanced Healthcare Materials, 6(11). doi:10.1002/adhm.201700033

DOI: 10.1002/adhm.201700033

The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM (Journal article)

Sedghi, N., Li, H., Brunell, I. F., Dawson, K., Potter, R. J., Guo, Y., . . . Chalker, P. R. (2017). The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM. Applied Physics Letters, 110(10), 102902-1-102902-4. doi:10.1063/1.4978033

DOI: 10.1063/1.4978033

2016

Wider Memory Window in Ta2O5 RRAM by Doping (Conference Paper)

Sedghi, N., Li, H., Brunell, I., Potter, R., Hall, S., Dawson, K., . . . Robertson, J. (2016). Wider Memory Window in Ta2O5 RRAM by Doping. In 47th IEEE Semiconductor Interface Specialists Conference. Catamaran Hotel, San Diego, CA.

High volume fabrication of laser targets using MEMS techniques (Conference Paper)

Spindloe, C., Arthur, G., Hall, F., Tomlinson, S., Potter, R., Kar, S., . . . Tolley, M. K. (2016). High volume fabrication of laser targets using MEMS techniques. In 5TH TARGET FABRICATION WORKSHOP Vol. 713. doi:10.1088/1742-6596/713/1/012002

DOI: 10.1088/1742-6596/713/1/012002

Self-limiting atomic layer deposition of conformal nanostructured silver films (Journal article)

Golrokhi, Z., Chalker, S., Sutcliffe, C. J., & Potter, R. J. (2016). Self-limiting atomic layer deposition of conformal nanostructured silver films. Applied Surface Science, 364, 789-797. doi:10.1016/j.apsusc.2015.12.127

DOI: 10.1016/j.apsusc.2015.12.127

Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5)x(Al2O3)1-x as potential gate dielectrics for GaN/AlxGa1-xN/GaN high electron mobility transistors (Journal article)

Partida-Manzanera, T., Roberts, J. W., Bhat, T. N., Zhang, Z., Tan, H. R., Dolmanan, S. B., . . . Potter, R. J. (2016). Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5)x(Al2O3)1-x as potential gate dielectrics for GaN/AlxGa1-xN/GaN high electron mobility transistors. JOURNAL OF APPLIED PHYSICS, 119(2). doi:10.1063/1.4939298

DOI: 10.1063/1.4939298

2015

The Effects of Zr Doping on the Optical, Electrical and Microstructural Properties of Thin ZnO Films Deposited by Atomic Layer Deposition (Journal article)

Herodotou, S., Treharne, R. E., Durose, K., Tatlock, G. J., & Potter, R. J. (2015). The Effects of Zr Doping on the Optical, Electrical and Microstructural Properties of Thin ZnO Films Deposited by Atomic Layer Deposition. Materials, 8(10), 7230-7240. doi:10.3390/ma8105369

DOI: 10.3390/ma8105369

(Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films (Journal article)

Chalker, P. R., Marshall, P. A., Dawson, K., Sutcliffe, C. J., Brunell, I. F., Sedghi, N., . . . Potter, R. J. (2015). (Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films. ECS Transactions, 69(7), 139-145. doi:10.1149/06907.0139ecst

DOI: 10.1149/06907.0139ecst

Band Alignment of Ta2O5 on Sulphur Passivated Germanium by X-ray Photoelectron Spectroscopy (Conference Paper)

Althobaiti, M. G., Stoner, J., Dhanak, V. R., Potter, R. J., & Mitrovic, I. Z. (2015). Band Alignment of Ta2O5 on Sulphur Passivated Germanium by X-ray Photoelectron Spectroscopy. In 2015 11TH CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME) (pp. 161-163). Retrieved from https://www.webofscience.com/

(Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films (Journal article)

Chalker, P. R., Marshall, P. A., Dawson, K., Sutcliffe, C. J., Brunell, I. F., Sedghi, N., . . . Potter, R. J. (2015). (Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films. ECS Meeting Abstracts, MA2015-02(26), 993. doi:10.1149/ma2015-02/26/993

DOI: 10.1149/ma2015-02/26/993

Oxygen Deficient α-Fe2O3Photoelectrodes: A Balance Between Enhanced Electrical Properties and Trap-Mediated Losses (Journal article)

Forster, M., Potter, R., Ling, Y., Yang, Y., Klug, D., Li, Y., & Cowan, A. (2015). Oxygen Deficient α-Fe2O3Photoelectrodes: A Balance Between Enhanced Electrical Properties and Trap-Mediated Losses. Chemical Science, 6(7), 4009-4016. doi:10.1039/C5SC00423C

DOI: 10.1039/C5SC00423C

Vacuum ultraviolet photochemical selectivearea atomic layer deposition of Al2O3 dielectrics (Journal article)

Chalker, P. R., Marshall, P. A., Dawson, K., Brunell, I. F., Sutcliffe, C. J., & Potter, R. J. (2015). Vacuum ultraviolet photochemical selectivearea atomic layer deposition of Al2O3 dielectrics. AIP Advances, 5(1). doi:10.1063/1.4905887

DOI: 10.1063/1.4905887

2014

Tuning the electrical properties of ZnO thin-film transistors by thermal annealing in different gases (Journal article)

Jin, J. D., Luo, Y., Bao, P., Brox-Nilsen, C., Potter, R., & Song, A. M. (2014). Tuning the electrical properties of ZnO thin-film transistors by thermal annealing in different gases. THIN SOLID FILMS, 552, 192-195. doi:10.1016/j.tsf.2013.12.004

DOI: 10.1016/j.tsf.2013.12.004

2012

Polymer-nanoparticle composites composed of PEDOT:PSS and nanoparticles of Ag synthesised by laser ablation (Journal article)

Semaltianos, N. G., Perrie, W., Romani, S., Potter, R. J., Dearden, G., & Watkins, K. G. (2012). Polymer-nanoparticle composites composed of PEDOT:PSS and nanoparticles of Ag synthesised by laser ablation. COLLOID AND POLYMER SCIENCE, 290(3), 213-220. doi:10.1007/s00396-011-2533-6

DOI: 10.1007/s00396-011-2533-6

Gadolinium nitride films deposited using a PEALD based process (Journal article)

Fang, Z., Williams, P. A., Odedra, R., Jeon, H., & Potter, R. J. (2012). Gadolinium nitride films deposited using a PEALD based process. JOURNAL OF CRYSTAL GROWTH, 338(1), 111-117. doi:10.1016/j.jcrysgro.2011.10.049

DOI: 10.1016/j.jcrysgro.2011.10.049

Preliminary Investigation of High-K Materials –Tio2 Doped Ta2o5 Films by Remote Plasma Ald (Conference Paper)

Fang, Q., Hodson, C., Liu, M., Fang, Z. W., Potter, R., & Gunn, R. (2012). Preliminary Investigation of High-K Materials –Tio2 Doped Ta2o5 Films by Remote Plasma Ald. In Physics Procedia Vol. 32 (pp. 379-388). Elsevier BV. doi:10.1016/j.phpro.2012.03.572

DOI: 10.1016/j.phpro.2012.03.572

2011

Atomic layer deposition of TaN and Ta3N5 using pentakis(dimethylamino) tantalum and either ammonia or monomethylhydrazine (Journal article)

Fang, Z., Aspinall, H. C., Odedra, R., & Potter, R. J. (2011). Atomic layer deposition of TaN and Ta3N5 using pentakis(dimethylamino) tantalum and either ammonia or monomethylhydrazine. JOURNAL OF CRYSTAL GROWTH, 331(1), 33-39. doi:10.1016/j.jcrysgro.2011.07.012

DOI: 10.1016/j.jcrysgro.2011.07.012

Picosecond laser patterning of PEDOT:PSS thin films (Journal article)

Semaltianos, N. G., Koidis, C., Pitsalidis, C., Karagiannidis, P., Logothetidis, S., Perrie, W., . . . Watkins, K. G. (2011). Picosecond laser patterning of PEDOT:PSS thin films. SYNTHETIC METALS, 161(5-6), 431-439. doi:10.1016/j.synthmet.2010.12.022

DOI: 10.1016/j.synthmet.2010.12.022

2010

Modification of the electrical properties of PEDOT:PSS by the incorporation of ZnO nanoparticles synthesized by laser ablation (Journal article)

Semaltianos, N. G., Logothetidis, S., Hastas, N., Perrie, W., Romani, S., Potter, R. J., . . . Sharp, M. (2010). Modification of the electrical properties of PEDOT:PSS by the incorporation of ZnO nanoparticles synthesized by laser ablation. CHEMICAL PHYSICS LETTERS, 484(4-6), 283-289. doi:10.1016/j.cplett.2009.11.054

DOI: 10.1016/j.cplett.2009.11.054

Silicon nanoparticles generated by femtosecond laser ablation in a liquid environment (Journal article)

Semaltianos, N. G., Logothetidis, S., Perrie, W., Romani, S., Potter, R. J., Edwardson, S. P., . . . Watkins, K. G. (2010). Silicon nanoparticles generated by femtosecond laser ablation in a liquid environment. JOURNAL OF NANOPARTICLE RESEARCH, 12(2), 573-580. doi:10.1007/s11051-009-9625-y

DOI: 10.1007/s11051-009-9625-y

2009

High-k dielectrics' radiation response to X-ray and &#x03B3;-ray exposure (Conference Paper)

Zhao, C. Z., Werner, M., Taylor, S., Chalker, P. R., Potter, R. J., & Gaskell, J. (2009). High-k dielectrics' radiation response to X-ray and &#x03B3;-ray exposure. In 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits. IEEE. doi:10.1109/ipfa.2009.5232565

DOI: 10.1109/ipfa.2009.5232565

CdTe nanoparticles synthesized by laser ablation (Journal article)

Semaltianos, N. G., Logothetidis, S., Perrie, W., Romani, S., Potter, R. J., Sharp, M., . . . Watkins, K. G. (2009). CdTe nanoparticles synthesized by laser ablation. APPLIED PHYSICS LETTERS, 95(3). doi:10.1063/1.3171941

DOI: 10.1063/1.3171941

High-k materials and their response to gamma ray radiation (Journal article)

Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Potter, R. J., Gaskell, J. M., & Jones, A. C. (2009). High-k materials and their response to gamma ray radiation. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(1), 411-415. doi:10.1116/1.3071848

DOI: 10.1116/1.3071848

II-VI semiconductor nanoparticles synthesized by laser ablation (Journal article)

Semaltianos, N. G., Logothetidis, S., Perrie, W., Romani, S., Potter, R. J., Sharp, M., . . . Watkins, K. G. (2009). II-VI semiconductor nanoparticles synthesized by laser ablation. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 94(3), 641-647. doi:10.1007/s00339-008-4854-y

DOI: 10.1007/s00339-008-4854-y

2008

CdSe nanoparticles synthesized by laser ablation (Journal article)

Semaltianos, N. G., Logothetidis, S., Perrie, W., Romani, S., Potter, R. J., Sharp, M., . . . Watkins, K. G. (2008). CdSe nanoparticles synthesized by laser ablation. EPL, 84(4). doi:10.1209/0295-5075/84/47001

DOI: 10.1209/0295-5075/84/47001

Permittivity enhancement of hafnium dioxide high-κ films by cerium doping (Journal article)

Chalker, P. R., Werner, M., Romani, S., Potter, R. J., Black, K., Aspinall, H. C., . . . Heys, P. N. (2008). Permittivity enhancement of hafnium dioxide high-κ films by cerium doping. APPLIED PHYSICS LETTERS, 93(18). doi:10.1063/1.3023059

DOI: 10.1063/1.3023059

'High-k Materials and Their Response to Gamma Ray Radiation', (Conference Paper)

Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Potter, R. J., Gaskell, J. M., & Jones, A. C. (2008). 'High-k Materials and Their Response to Gamma Ray Radiation',. In WODIM 2008, (pp. 5-6). Berlin,: AVS.

Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology (Book)

Mazzucato, S., & Potter, R. J. (2008). Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology (Vol. 105). A. Erol (Ed.), Berlin Heidelberg New York: Springer.

The Effects of Nitrogen Incorporation on Photogenerated Carrier Dynamics in Dilute Nitrides (Chapter)

Mazzucato, S., & Potter, R. J. (n.d.). The Effects of Nitrogen Incorporation on Photogenerated Carrier Dynamics in Dilute Nitrides. In Dilute III-V Nitride Semiconductors and Material Systems (pp. 181-197). Springer Berlin Heidelberg. doi:10.1007/978-3-540-74529-7_7

DOI: 10.1007/978-3-540-74529-7_7

2007

Deposition of Pr- and Nd-aluminate by liquid injection MOCVD and ALD using single-source heterometallic alkoxide precursors (Journal article)

Gaskell, J. M., Przybylak, S., Jones, A. C., Aspinall, H. C., Chalker, P. R., Black, K., . . . Taylor, S. (2007). Deposition of Pr- and Nd-aluminate by liquid injection MOCVD and ALD using single-source heterometallic alkoxide precursors. CHEMISTRY OF MATERIALS, 19(19), 4796-4803. doi:10.1021/cm0707556

DOI: 10.1021/cm0707556

Charge trapping and interface states in hydrogen annealed HfO2-Si structures (Journal article)

Gomeniuk, Y. V., Nazarov, A. N., Vovk, Y. N., Lysenko, V. S., Lu, Y., Buiu, O., . . . Chalker, P. (2007). Charge trapping and interface states in hydrogen annealed HfO2-Si structures. MICROELECTRONICS RELIABILITY, 47(4-5), 714-717. doi:10.1016/j.microrel.2007.01.025

DOI: 10.1016/j.microrel.2007.01.025

Charge trapping characterization of MOCVD HfO2/p-Si interfaces at cryogenic temperatures (Journal article)

Tyagulskyy, I. P., Osiyuk, I. N., Lysenko, V. S., Nazarov, A. N., Hall, S., Buiu, O., . . . Chalker, P. (2007). Charge trapping characterization of MOCVD HfO2/p-Si interfaces at cryogenic temperatures. MICROELECTRONICS RELIABILITY, 47(4-5), 726-728. doi:10.1016/j.microrel.2007.01.074

DOI: 10.1016/j.microrel.2007.01.074

Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition (Journal article)

Taechakumput, P., Taylor, S., Buiu, O., Potter, R. J., Chalker, P. R., & Jones, A. C. (2007). Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition. MICROELECTRONICS RELIABILITY, 47(4-5), 825-829. doi:10.1016/j.microrel.2007.01.049

DOI: 10.1016/j.microrel.2007.01.049

Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition (Journal article)

Lu, Y., Buiu, O., Hall, S., Mitrovic, I. Z., Davey, W., Potter, R. J., & Chalker, P. R. (2007). Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition. MICROELECTRONICS RELIABILITY, 47(4-5), 722-725. doi:10.1016/j.microrel.2007.01.052

DOI: 10.1016/j.microrel.2007.01.052

Investigation of optical and electronic properties of hafnium aluminate films deposited by Metal-Organic Chemical Vapour Deposition (Journal article)

Buiu, O., Lu, Y., Hall, S., Mitrovic, I. Z., Potter, R. J., & Chalker, P. R. (2007). Investigation of optical and electronic properties of hafnium aluminate films deposited by Metal-Organic Chemical Vapour Deposition. THIN SOLID FILMS, 515(7-8), 3772-3778. doi:10.1016/j.tsf.2006.09.035

DOI: 10.1016/j.tsf.2006.09.035

Optimising Precursor Delivery (Internet publication)

Potter, R. J. (2007). Optimising Precursor Delivery. SAFC Hitech. Retrieved from http://www.sigmaaldrich.com/SAFC/Hitech/Overview/Newsletters.html

2006

Spectroellipsometric assessment of HfO2 thin films (Journal article)

Buiu, O., Lu, Y., Mitrovic, I. Z., Hall, S., Chalker, P., & Potter, R. J. (2006). Spectroellipsometric assessment of HfO2 thin films. THIN SOLID FILMS, 515(2), 623-626. doi:10.1016/j.tsf.2005.12.215

DOI: 10.1016/j.tsf.2005.12.215

Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes (Journal article)

Lu, Y., Buiu, O., Mitrovic, I., Hall, S., Chalker, P. R., Potter, R., . . . Vovk, Y. (2006). Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes. ECS Transactions, 1(5), 517-528. doi:10.1149/1.2209301

DOI: 10.1149/1.2209301

MOCVD and ALD of High‐ϰ Dielectric Oxides Using Alkoxide Precursors (Journal article)

Jones, A. C., Aspinall, H. C., Chalker, P. R., Potter, R. J., Manning, T. D., Loo, Y. F., . . . Smith, L. M. (2006). MOCVD and ALD of High‐ϰ Dielectric Oxides Using Alkoxide Precursors. ChemInform, 37(21). doi:10.1002/chin.200621220

DOI: 10.1002/chin.200621220

MOCVD and ALD of high-κ dielectric oxides using alkoxide precursors (Journal article)

Jones, A. C., Aspinall, H. C., Chalker, P. R., Potter, R. J., Manning, T. D., Loo, Y. F., . . . Smith, L. M. (2006). MOCVD and ALD of high-κ dielectric oxides using alkoxide precursors. CHEMICAL VAPOR DEPOSITION, 12(2-3), 83-98. doi:10.1002/cvde.200500023

DOI: 10.1002/cvde.200500023

Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes (Journal article)

Lu, Y., Buiu, O., Mitrovic, I., Hall, S., Chalker, P., Potter, R., . . . Lysenko, V. (2006). Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes. ECS Meeting Abstracts, MA2005-02(13), 537. doi:10.1149/ma2005-02/13/537

DOI: 10.1149/ma2005-02/13/537

'Charge Trapping Characterization of the HfO2/p-Si Interfaces at Cryogenic Temperatures' (Conference Paper)

Tyagulskyy, I. P., Osiyuk, I. N., Lysenko, V. S., Nazarov, A. N., Hall, S., Buiu, O., . . . Lashkaryov, V. E. (2006). 'Charge Trapping Characterization of the HfO2/p-Si Interfaces at Cryogenic Temperatures'. In S. Lombardo (Ed.), 14th Workshop on Dielectric in Microelectronics (pp. 174-175). Santa Tecla - Catania: CNR - Italy.

'Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition' (Conference Paper)

Lu, Y., Buiu, O., Mitrovic, I. Z., Hall, S., Potter, R. J., & Chalker, P. (2006). 'Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition'. In 14th Workshop on Dielectric in Microelectronics (pp. 188-189). Santa Tecla - Catania: CNR - Italy.

, Investigation of optical and electronic properties of hafnium aluminate films deposited by MOCVD (Journal article)

Buiu, O., Lu, Y., Hall, S., Mitrovic, I. Z., Potter, R. J., & Chalker, P. R. (2006). , Investigation of optical and electronic properties of hafnium aluminate films deposited by MOCVD. Thin Solid Films.

Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition (LI - ALD) (Conference Paper)

Taechakumput, P., Taylor, S., Buiu, O., Ram, D. L., Potter, R. J., Chalker, P. R., & Jones, A. C. (2006). Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition (LI - ALD). In S. Lombardo (Ed.), 14th Workshop on Dielectric in Microelectronics (pp. 176-177). Santa Tecla - Catania: CNR - Italy.

2005

A superlattice approach to the synthesis of strontium bismuth tantalate thin films using liquid-injection-MOCVD (Conference Paper)

Potter, R. J., Awad, A., Chalker, P. R., Peng, W., Jones, A. C., Noakes, T. C. Q., & Bailey, P. (2005). A superlattice approach to the synthesis of strontium bismuth tantalate thin films using liquid-injection-MOCVD. In Materials Research Society Symposium Proceedings Vol. 902 (pp. 1-6).

Deposition of HfO2 films by liquid injection MOCVD using a new monomeric alkoxide precursor, [Hf(dmop)4] (Journal article)

Loo, Y. F., O'Kane, R., Jones, A. C., Aspinall, H. C., Potter, R. J., Chalker, P. R., . . . Smith, L. M. (2005). Deposition of HfO2 films by liquid injection MOCVD using a new monomeric alkoxide precursor, [Hf(dmop)4]. CHEMICAL VAPOR DEPOSITION, 11(6-7), 299-305. doi:10.1002/cvde.200506384

DOI: 10.1002/cvde.200506384

Deposition of HfO2 and ZrO2 films by liquid injection MOCVD using new monomeric alkoxide precursors (Journal article)

Loo, Y. F., O'Kane, R., Jones, A. C., Aspinall, H. C., Potter, R. J., Chalker, P. R., . . . Smith, L. M. (2005). Deposition of HfO2 and ZrO2 films by liquid injection MOCVD using new monomeric alkoxide precursors. JOURNAL OF MATERIALS CHEMISTRY, 15(19), 1896-1902. doi:10.1039/b417389a

DOI: 10.1039/b417389a

Recent developments in the MOCVD and ALD of rare earth oxides and silicates (Journal article)

Jones, A. C., Aspinall, H. C., Chalker, P. R., Potter, R. J., Kukli, K., Rahtu, A., . . . Leskelä, M. (2005). Recent developments in the MOCVD and ALD of rare earth oxides and silicates. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 118(1-3), 97-104. doi:10.1016/j.mseb.2004.12.081

DOI: 10.1016/j.mseb.2004.12.081

Atomic vapour deposition (AVD) of SrBi2Ta2O9 using an all alkoxide precursor system (vol 272, pg 778, 2004) (Journal article)

Chalker, P. R., Potter, R. J., Roberts, J. L., Jones, A. C., Smith, L. M., & Schumacher, M. (2005). Atomic vapour deposition (AVD) of SrBi2Ta2O9 using an all alkoxide precursor system (vol 272, pg 778, 2004). JOURNAL OF CRYSTAL GROWTH, 276(1-2), 333. doi:10.1016/j.jcrysgro.2005.01.093

DOI: 10.1016/j.jcrysgro.2005.01.093

Deposition of HfO2, Gd2O3 and PrOx by liquid injection ALD techniques (Journal article)

Potter, R. J., Chalker, P. R., Manning, T. D., Aspinall, H. C., Loo, Y. F., Jones, A. C., . . . Schumacher, M. (2005). Deposition of HfO2, Gd2O3 and PrOx by liquid injection ALD techniques. CHEMICAL VAPOR DEPOSITION, 11(3), 159-169. doi:10.1002/cvde.200406348

DOI: 10.1002/cvde.200406348

A superlattice approach to the synthesis of ferroelectric Strontium Bismuth Tantalate thin films using liquid-injection-MOCVD (Journal article)

Potter, R., Awad, A., Chalker, P. R., Wang, P., Jones, A. C., Noakes, T. C. Q., & Bailey, P. (2005). A superlattice approach to the synthesis of ferroelectric Strontium Bismuth Tantalate thin films using liquid-injection-MOCVD. MRS Proceedings, 902. doi:10.1557/proc-0902-t02-02

DOI: 10.1557/proc-0902-t02-02

2004

Atomic vapour deposition (AVD) of SrBi2Ta2O9 using an all alkoxide precursor (Journal article)

Chalker, P. R., Potter, R. J., Roberts, J. L., Jones, A. C., Smith, L. M., & Schumacher, M. (2004). Atomic vapour deposition (AVD) of SrBi2Ta2O9 using an all alkoxide precursor. JOURNAL OF CRYSTAL GROWTH, 272(1-4), 778-784. doi:10.1016/j.jcrysgro.2004.08.109

DOI: 10.1016/j.jcrysgro.2004.08.109

Growth of gadolinium oxide thin films by liquid injection MOCVD using a new gadolinium alkoxide precursor (Journal article)

Aspinall, H. C., Gaskell, J. M., Loo, Y. F., Jones, A. C., Chalker, P. R., Potter, R. J., . . . Critchlow, G. W. (2004). Growth of gadolinium oxide thin films by liquid injection MOCVD using a new gadolinium alkoxide precursor. CHEMICAL VAPOR DEPOSITION, 10(6), 301-305. doi:10.1002/cvde.200306310

DOI: 10.1002/cvde.200306310

Growth of neodymium oxide thin films by liquid-injection MOCVD using a new neodymium alkoxide precursor (Journal article)

Loo, Y. F., Potter, R. L., Jones, A. C., Aspinall, H. C., Gaskell, J. M., Chalker, P. R., . . . Critchlow, G. W. (2004). Growth of neodymium oxide thin films by liquid-injection MOCVD using a new neodymium alkoxide precursor. CHEMICAL VAPOR DEPOSITION, 10(6), 306-310. doi:10.1002/cvde.200406313

DOI: 10.1002/cvde.200406313

Some recent developments in the MOCVD and ALD of high-κ dielectric oxides (Journal article)

Jones, A. C., Aspinall, H. C., Chalker, P. R., Potter, R. J., Kukli, K., Rahtu, A., . . . Leskelä, M. (2004). Some recent developments in the MOCVD and ALD of high-κ dielectric oxides. JOURNAL OF MATERIALS CHEMISTRY, 14(21), 3101-3112. doi:10.1039/b405525j

DOI: 10.1039/b405525j

Thermal stability of hafnium silicate dielectric films deposited by a dual source liquid injection MOCVD (Journal article)

Chalker, P. R., Marshall, P. A., Potter, R. J., Joyce, T. B., Jones, A. C., Taylor, S., . . . Bailey, P. (2004). Thermal stability of hafnium silicate dielectric films deposited by a dual source liquid injection MOCVD. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 15(11), 711-714. doi:10.1023/B:JMSE.0000043417.59029.d6

DOI: 10.1023/B:JMSE.0000043417.59029.d6

Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/GaAs QWs: blue shift versus red shift (Conference Paper)

Balkan, N., Mazzucato, S., Erol, A., Hepburn, C. J., Potter, R. J., Boland-Thoms, A., . . . Bullough, T. J. (2004). Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/GaAs QWs: blue shift versus red shift. In IEE PROCEEDINGS-OPTOELECTRONICS Vol. 151 (pp. 284-289). doi:10.1049/ip-opt:20040935

DOI: 10.1049/ip-opt:20040935

Growth of hafnium aluminate thin films by liquid injection MOCVD using alkoxide precursors (Journal article)

Marshall, P. A., Potter, R. J., Jones, A. C., Chalker, P. R., Taylor, S., Critchlow, G. W., & Rushworth, S. A. (2004). Growth of hafnium aluminate thin films by liquid injection MOCVD using alkoxide precursors. CHEMICAL VAPOR DEPOSITION, 10(5), 275-279. doi:10.1002/cvde.200306301

DOI: 10.1002/cvde.200306301

Optical properties of GaNAs and GaInAsN quantum wells (Journal article)

Potter, R. J., & Balkan, N. (2004). Optical properties of GaNAs and GaInAsN quantum wells. JOURNAL OF PHYSICS-CONDENSED MATTER, 16(31), S3387-S3412. doi:10.1088/0953-8984/16/31/026

DOI: 10.1088/0953-8984/16/31/026

Characterization of hafnium aluminate gate dielectrics deposited by liquid injection metalorganic chemical vapor deposition (Journal article)

Potter, R. J., Marshall, P. A., Chalker, P. R., Taylor, S., Jones, A. C., Noakes, T. C. Q., & Bailey, P. (2004). Characterization of hafnium aluminate gate dielectrics deposited by liquid injection metalorganic chemical vapor deposition. APPLIED PHYSICS LETTERS, 84(20), 4119-4121. doi:10.1063/1.1755424

DOI: 10.1063/1.1755424

Synthesis and characterisation of four new heterometal alkoxides: potential precursors for the MOCVD of ferroelectric oxides (Journal article)

Jones, A. C., Tobin, N. L., Marshall, P. A., Potter, R. J., Chalker, P. R., Bickley, J. F., . . . Critchlow, G. W. (2004). Synthesis and characterisation of four new heterometal alkoxides: potential precursors for the MOCVD of ferroelectric oxides. JOURNAL OF MATERIALS CHEMISTRY, 14(5), 887-894. doi:10.1039/b312697h

DOI: 10.1039/b312697h

2003

Effect of nitrogen fraction on the temperature dependence of GaNAs/GaAs quantum-well emission (Journal article)

Potter, R. J., Balkan, N., Carrère, H., Arnoult, A., Bedel, E., & Marie, X. (2003). Effect of nitrogen fraction on the temperature dependence of GaNAs/GaAs quantum-well emission. APPLIED PHYSICS LETTERS, 82(20), 3400-3402. doi:10.1063/1.1576511

DOI: 10.1063/1.1576511

Band structure and optical gain in GaInAsN quantum wells (Journal article)

Carrère, H., Arnoult, A., Marie, X., Amand, T., Bedel-Pereira, E., Potter, R. J., & Balkan, N. (2003). Band structure and optical gain in GaInAsN quantum wells. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17(1-4), 245-246. doi:10.1016/S1386-9477(02)00784-1

DOI: 10.1016/S1386-9477(02)00784-1

Comparison of theoretical models for interband transitions in dilute nitrides and experimental measurement (Journal article)

Potter, R. J., Alexandropoulos, D., Erol, A., Mazzucato, S., Balkan, N., Adams, M. J., . . . Fontaine, C. (2003). Comparison of theoretical models for interband transitions in dilute nitrides and experimental measurement. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17(1-4), 240-241. doi:10.1016/S1386-9477(02)00782-8

DOI: 10.1016/S1386-9477(02)00782-8

Hot electron light emission from GaInAsP/InP structures with distributed Bragg reflectors (Journal article)

Sceats, R., Dyson, A., Hepburn, C. J., Potter, R. J., Boland-Thoms, A., Balkan, N., . . . Pinches, S. (2003). Hot electron light emission from GaInAsP/InP structures with distributed Bragg reflectors. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17(1-4), 607-609. doi:10.1016/S1386-9477(02)00884-6

DOI: 10.1016/S1386-9477(02)00884-6

Photo-induced transient spectroscopy and in-plane photovoltage in GaInNAs/GaAs quantum wells (Journal article)

Mazzucato, S., Erol, A., Teke, A., Arikan, M. C., Potter, R. J., Balkan, N., . . . Arnoult, A. (2003). Photo-induced transient spectroscopy and in-plane photovoltage in GaInNAs/GaAs quantum wells. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17(1-4), 250-251. doi:10.1016/S1386-9477(02)00786-5

DOI: 10.1016/S1386-9477(02)00786-5

S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides (Journal article)

Mazzucato, S., Potter, R. J., Erol, A., Balkan, N., Chalker, P. R., Joyce, T. B., . . . Fontaine, C. (2003). S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17(1-4), 242-244. doi:10.1016/S1386-9477(02)00783-X

DOI: 10.1016/S1386-9477(02)00783-X

The operation of a wavelength converter based on a field effect light emitting and absorbing heterojunction (Journal article)

Wah, J. Y., Balkan, N., Potter, R. J., & Roberts, J. S. (2003). The operation of a wavelength converter based on a field effect light emitting and absorbing heterojunction. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 196(2), 496-503. doi:10.1002/pssa.200305952

DOI: 10.1002/pssa.200305952

In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells (Journal article)

Mazzucato, S., Balkan, N., Teke, A., Erol, A., Potter, R. J., Arikan, M. C., . . . Lacoste, G. (2003). In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells. JOURNAL OF APPLIED PHYSICS, 93(5), 2440-2448. doi:10.1063/1.1541104

DOI: 10.1063/1.1541104

Optical properties of GaInNAs/GaAs quantum wells (Journal article)

Mazzucato, S., Erol, A., Potter, R. J., Balkan, N., Chalker, P. R., Thomas, S., . . . Bullough, T. J. (2003). Optical properties of GaInNAs/GaAs quantum wells. SOLID-STATE ELECTRONICS, 47(3), 483-487. doi:10.1016/S0038-1101(02)00394-5

DOI: 10.1016/S0038-1101(02)00394-5

Bi-directional field effect light emitting and absorbing heterojunction with Ga0.8In0.2N0.015As0.985 at 1250 nm (Conference Paper)

Wah, J. Y., Loubet, N., Potter, R. J., Mazzucato, S., Arnoult, A., Carrère, H., . . . Balkan, N. (2003). Bi-directional field effect light emitting and absorbing heterojunction with Ga0.8In0.2N0.015As0.985 at 1250 nm. In IEE PROCEEDINGS-OPTOELECTRONICS Vol. 150 (pp. 72-74). doi:10.1049/ip-opt:20030051

DOI: 10.1049/ip-opt:20030051

Time resolved PL study of GaInNAs quantum wells (Conference Paper)

Potter, R. J., Balkan, N., Marie, X., Senes, M., Carrère, H., Arnoult, A., & Fontaine, C. (2003). Time resolved PL study of GaInNAs quantum wells. In IEE PROCEEDINGS-OPTOELECTRONICS Vol. 150 (pp. 75-76). doi:10.1049/ip-opt:20030050

DOI: 10.1049/ip-opt:20030050

Liquid injection MOCVD and ALD studies of "single source" Sr-Nb and Sr-Ta precursors (Conference Paper)

Potter, R. J., Marshall, P. A., Roberts, J. L., Jones, A. C., Chalker, P. R., Vehkamäki, M., . . . Smith, L. M. (2004). Liquid injection MOCVD and ALD studies of "single source" Sr-Nb and Sr-Ta precursors. In FERROELECTRIC THIN FILMS XII Vol. 784 (pp. 97-108). Retrieved from https://www.webofscience.com/

Optical processes in dilute nitrides (Thesis / Dissertation)

Potter, R. J. (2003). Optical processes in dilute nitrides. (PhD Thesis, The University of Essex).

2001

Compositional variation in as-grown GaInNAs/GaAs quantum well structures (Journal article)

Chalker, P. R., Davock, H., Thomas, S., Joyce, T. B., Bullough, T. J., Potter, R. J., & Balkan, N. (2001). Compositional variation in as-grown GaInNAs/GaAs quantum well structures. JOURNAL OF CRYSTAL GROWTH, 233(1-2), 1-4. doi:10.1016/S0022-0248(01)01535-4

DOI: 10.1016/S0022-0248(01)01535-4

Interaction Strength between the Highly Localised Nitrogen States and the Extended Semiconductor Matrix States in GaInNAs (Journal article)

Potter, R. J., Balkan, N., Marie, X., Carr�re, H., Bedel, E., & Lacoste, G. (2001). Interaction Strength between the Highly Localised Nitrogen States and the Extended Semiconductor Matrix States in GaInNAs. physica status solidi (a), 187(2), 623-632. doi:3.0.co;2-q">10.1002/1521-396x(200110)187:2<623::aid-pssa623>3.0.co;2-q

DOI: 10.1002/1521-396x(200110)187:2<623::aid-pssa623>3.0.co;2-q

Interaction Strength between the Highly Localised Nitrogen States and tne Extended Semiconductor Matrix States in GaInNAs (Journal article)

Potter, R. J., Balkan, N., Marie, X., Carrère, H., Bedel, E., & Lacoste, G. (2001). Interaction Strength between the Highly Localised Nitrogen States and tne Extended Semiconductor Matrix States in GaInNAs. Physica Status Solidi (A) Applied Research, 187(2), 623-632. doi:3.0.CO;2-Q">10.1002/1521-396X(200110)187:2<623::AID-PSSA623>3.0.CO;2-Q

DOI: 10.1002/1521-396X(200110)187:2<623::AID-PSSA623>3.0.CO;2-Q

Interaction strength between the highly localised nitrogen states and the extended semiconductor matrix states in GaInNAs (Journal article)

Potter, R. J., Balkan, N., Marie, X., Carrère, H., Bedel, E., & Lacoste, G. (2001). Interaction strength between the highly localised nitrogen states and the extended semiconductor matrix states in GaInNAs. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 187(2), 623-632. doi:3.3.CO;2-H">10.1002/1521-396X(200110)187:2<623::AID-PSSA623>3.3.CO;2-H

DOI: 10.1002/1521-396X(200110)187:2<623::AID-PSSA623>3.3.CO;2-H

1.5 μm surface emission from GaInAsP/InP HELLISH structures (Conference Paper)

Sceats, R., Hepburn, C. J., Potter, R., Dyson, A., Balkan, N., & Adams, M. J. (2001). 1.5 μm surface emission from GaInAsP/InP HELLISH structures. In PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IX Vol. 4283 (pp. 723-732). doi:10.1117/12.432628

DOI: 10.1117/12.432628

Optical characterization of GaInNAs (Conference Paper)

Potter, R. J., Mazzucato, S., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2001). Optical characterization of GaInNAs. In PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IX Vol. 4283 (pp. 638-644). doi:10.1117/12.432617

DOI: 10.1117/12.432617

Hot electron light emission from a GaInAsP/InP structure (Conference Paper)

Sceats, R., Dyson, A., Potter, R., Boland-Thoms, A., Balkan, N., Adams, M. J., & Button, C. C. (2001). Hot electron light emission from a GaInAsP/InP structure. In IEE PROCEEDINGS-OPTOELECTRONICS Vol. 148 (pp. 60-64). doi:10.1049/ip-opt:20010131

DOI: 10.1049/ip-opt:20010131

Compositional variation in as-grown GaInNAs/GaAs quantum well structures (Journal article)

Chalker, P. R., Davock, H., Thomas, S., Joyce, T. B., Bullough, T. J., Potter, R. J., . . . Adams, M. J. (2001). Compositional variation in as-grown GaInNAs/GaAs quantum well structures. J. Crystal Growth Letts., 233(1-2), 1.

The effect of In/N ratio on the optical quality and lasing threshold in GaxIn1-xAs1-yNy/GaAs laser structures (Journal article)

Potter, R., Mazzucato, S., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2001). The effect of In/N ratio on the optical quality and lasing threshold in GaxIn1-xAs1-yNy/GaAs laser structures. SUPERLATTICES AND MICROSTRUCTURES, 29(2), 169-186. doi:10.1006/spmi.2000.0967

DOI: 10.1006/spmi.2000.0967

2000

Photoluminescence in Ga0.85In0.15As0.99N0.01/GaAs single quantum wells:: Effect of low temperature heat treatment in N2 (Journal article)

Potter, R. J., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2000). Photoluminescence in Ga0.85In0.15As0.99N0.01/GaAs single quantum wells:: Effect of low temperature heat treatment in N2. PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VIII, PTS 1 AND 2, 3944, 900-909. doi:10.1117/12.391403

DOI: 10.1117/12.391403

VCSEL structure hot electron light emitter (Journal article)

Balkan, N., Serpengüzel, A., O'Brien-Davies, A., Sökmen, I., Hepburn, C., Potter, R., . . . Roberts, J. S. (2000). VCSEL structure hot electron light emitter. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 74(1-3), 96-100. doi:10.1016/S0921-5107(99)00542-5

DOI: 10.1016/S0921-5107(99)00542-5

Photoluminescence in Ga<inf>0.85</inf>In<inf>0.15</inf>As<inf>0.99</inf>N<inf>0.01</inf>/GaAs single quantum wells: Effect of low temperature heat treatment in N<inf>2</inf> (Conference Paper)

Potter, R. J., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2000). Photoluminescence in Ga<inf>0.85</inf>In<inf>0.15</inf>As<inf>0.99</inf>N<inf>0.01</inf>/GaAs single quantum wells: Effect of low temperature heat treatment in N<inf>2</inf>. In Proceedings of SPIE - The International Society for Optical Engineering Vol. 3944.

1999

Hot electron VCSEL (Conference Paper)

Balkan, N., Sokmen, I., O'Brien-Davies, A., Potter, R., Hepburn, C., Boland-Thoms, A., . . . Roberts, J. (1999). Hot electron VCSEL. In PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VII Vol. 3625 (pp. 336-345). doi:10.1117/12.356892

DOI: 10.1117/12.356892

1998

The operation of a novel hot electron Vertical Cavity Surface Emitting Laser (Conference Paper)

Balkan, N., O'Brien, A., Thoms, A. B., Potter, R., Poolton, N., Adams, M., . . . Roberts, J. (1998). The operation of a novel hot electron Vertical Cavity Surface Emitting Laser. In PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VI, PTS 1 AND 2 Vol. 3283 (pp. 162-170). doi:10.1117/12.316680

DOI: 10.1117/12.316680

A Hot Electron Surface Emitting Laser: HELLISH (Conference Paper)

O'Brien, A., Sceats, R., Potter, R., Poolton, N., Masum, J., Boland-Thoms, A., . . . Adams, M. (n.d.). A Hot Electron Surface Emitting Laser: HELLISH. In CLEO/Europe Conference on Lasers and Electro-Optics. IEEE. doi:10.1109/cleoe.1998.718925

DOI: 10.1109/cleoe.1998.718925

A Hot Electron Surface emitting Laser: HELLISH (Conference Paper)

O'Brien, A., Sceats, R., Potter, R., Poolton, N., Masum, J., Boland-Thoms, A., . . . Adams, M. (1998). A Hot Electron Surface emitting Laser: HELLISH. In Conference on Lasers and Electro-Optics-Europe. Optica Publishing Group. doi:10.1364/cleo_europe.1998.cmh9

DOI: 10.1364/cleo_europe.1998.cmh9

Publications

Selected Publications

2022

LiNi0.5Mn1.5O4 Cathode Microstructure for All-Solid-State Batteries (Journal article)

LiNi0.5Mn1.5O4 cathode microstructure for all-solid-state batteries (Preprint)

Performance of a flat-plate polymeric pulsating heat pipe: effect of aluminium oxide coating (Conference Paper)

2021

Demonstration of a Fast, Low-voltage, III-V Semiconductor, Non-volatile Memory (Conference Paper)

ULTRARAM: Toward the Development of a III-V Semiconductor, Nonvolatile, Random Access Memory (Journal article)

2020

Femtosecond laser micro-structuring of amorphous polyether(ether)ketone at 775 nm and 387 nm (Journal article)

(Invited) Band Line-up of High-k Oxides on GaN (Journal article)

(Invited) Band Line-up of High-k Oxides on GaN (Journal article)

Band Line-up Investigation of Atomic Layer Deposited TiAlO and GaAlO on GaN (Journal article)

2019

Band Alignments, Band Gap, Core Levels, and Valence Band States in Cu<sub>3</sub>BiS<sub>3</sub> for Photovoltaics (Journal article)

2018

Directing the mechanism of CO<sub>2</sub> reduction by a Mn catalyst through surface immobilization (Journal article)

Elucidation of ALD MgZnO deposition processes using low energy ion scattering (Journal article)

Stable Ta2O5 Overlayers on Hematite for Enhanced Photoelectrochemical Water Splitting Efficiencies (Journal article)

2017

Core Levels, Band Alignments, and Valence-Band States in CuSbS<sub>2</sub> for Solar Cell Applications (Journal article)

Enhanced Switching Stability in Ta2O5 Resistive RAM by Fluorine Doping (Journal article)

Biotransformation of Silver Released from Nanoparticle Coated Titanium Implants Revealed in Regenerating Bone (Journal article)

The influence of tertiary butyl hydrazine as a co-reactant on the atomic layer deposition of silver (Journal article)

Atomic Layer Deposition of a Silver Nanolayer on Advanced Titanium Orthopedic Implants Inhibits Bacterial Colonization and Supports Vascularized de Novo Bone Ingrowth (Journal article)

The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM (Journal article)

2016

Wider Memory Window in Ta2O5 RRAM by Doping (Conference Paper)

High volume fabrication of laser targets using MEMS techniques (Conference Paper)

Self-limiting atomic layer deposition of conformal nanostructured silver films (Journal article)

2015

The Effects of Zr Doping on the Optical, Electrical and Microstructural Properties of Thin ZnO Films Deposited by Atomic Layer Deposition (Journal article)

(Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films (Journal article)

Band Alignment of Ta<sub>2</sub>O<sub>5</sub> on Sulphur Passivated Germanium by X-ray Photoelectron Spectroscopy (Conference Paper)

(Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films (Journal article)

Oxygen Deficient α-Fe2O3Photoelectrodes: A Balance Between Enhanced Electrical Properties and Trap-Mediated Losses (Journal article)

Vacuum ultraviolet photochemical selectivearea atomic layer deposition of Al2O3 dielectrics (Journal article)

2014

Tuning the electrical properties of ZnO thin-film transistors by thermal annealing in different gases (Journal article)

2012

Polymer-nanoparticle composites composed of PEDOT:PSS and nanoparticles of Ag synthesised by laser ablation (Journal article)

Gadolinium nitride films deposited using a PEALD based process (Journal article)

Preliminary Investigation of High-K Materials –Tio2 Doped Ta2o5 Films by Remote Plasma Ald (Conference Paper)

2011

Atomic layer deposition of TaN and Ta<sub>3</sub>N<sub>5</sub> using pentakis(dimethylamino) tantalum and either ammonia or monomethylhydrazine (Journal article)

Picosecond laser patterning of PEDOT:PSS thin films (Journal article)

2010

Modification of the electrical properties of PEDOT:PSS by the incorporation of ZnO nanoparticles synthesized by laser ablation (Journal article)

Silicon nanoparticles generated by femtosecond laser ablation in a liquid environment (Journal article)

2009

High-k dielectrics' radiation response to X-ray and &amp;#x03B3;-ray exposure (Conference Paper)

CdTe nanoparticles synthesized by laser ablation (Journal article)

High-<i>k</i> materials and their response to gamma ray radiation (Journal article)

II-VI semiconductor nanoparticles synthesized by laser ablation (Journal article)

2008

CdSe nanoparticles synthesized by laser ablation (Journal article)

Permittivity enhancement of hafnium dioxide high-κ films by cerium doping (Journal article)

'High-k Materials and Their Response to Gamma Ray Radiation', (Conference Paper)

Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology (Book)

The Effects of Nitrogen Incorporation on Photogenerated Carrier Dynamics in Dilute Nitrides (Chapter)

2007

Deposition of Pr- and Nd-aluminate by liquid injection MOCVD and ALD using single-source heterometallic alkoxide precursors (Journal article)

Charge trapping and interface states in hydrogen annealed HfO<sub>2</sub>-Si structures (Journal article)

Charge trapping characterization of MOCVD HfO<sub>2</sub>/p-Si interfaces at cryogenic temperatures (Journal article)

Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition (Journal article)

Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition (Journal article)

Investigation of optical and electronic properties of hafnium aluminate films deposited by Metal-Organic Chemical Vapour Deposition (Journal article)

Optimising Precursor Delivery (Internet publication)

2006

Spectroellipsometric assessment of HfO<sub>2</sub> thin films (Journal article)

Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes (Journal article)

MOCVD and ALD of High‐ϰ Dielectric Oxides Using Alkoxide Precursors (Journal article)

MOCVD and ALD of high-<i>κ</i> dielectric oxides using alkoxide precursors (Journal article)

Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes (Journal article)

'Charge Trapping Characterization of the HfO2/p-Si Interfaces at Cryogenic Temperatures' (Conference Paper)

'Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition' (Conference Paper)

, Investigation of optical and electronic properties of hafnium aluminate films deposited by MOCVD (Journal article)

Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition (LI - ALD) (Conference Paper)

2005

High-k dielectrics' radiation response to X-ray and γ-ray exposure (Conference Paper)