Photo of Prof Peter Goodhew

Prof Peter Goodhew FREng

Emeritus Professor of Engineering School of Engineering

    Publications

    2013

    The Scholarship of Teaching and Learning as collaborative working: a case study in shared practice and collective purpose (Journal article)

    Kahn, P., Goodhew, P., Murphy, M., & Walsh, L. (2013). The Scholarship of Teaching and Learning as collaborative working: a case study in shared practice and collective purpose. Higher Education Research & Development, 32(6), 901-914. doi:10.1080/07294360.2013.806439

    DOI: 10.1080/07294360.2013.806439

    2011

    Introduction to Transmission Electron Microscopy (Chapter)

    Goodhew, P. J. (2011). Introduction to Transmission Electron Microscopy. In R. Brydson (Ed.), Aberration-Corrected Analytical Electron Microscopy (pp. 296). London: John Wiley.

    2010

    Teaching Engineering (Book)

    Goodhew, P. J. (2010). Teaching Engineering. Liverpool: UKCME.

    2007

    'Active Learning of Materials Science' (Journal article)

    Goodhew, P. J. (2007). 'Active Learning of Materials Science'. Journal of Materials Education, 29(1-2), 43-53. Retrieved from http://www.unit.edu/ICME/

    Active Learning in Materials Science and Engineering (Journal article)

    Goodhew, P. J., & Bullough, T. J. (2007). Active Learning in Materials Science and Engineering. Journal of Materials Education, 28(3-6), 161-169.

    2006

    An approach to the systematic distortion correction in aberration-corrected HAADF images (Journal article)

    SANCHEZ, A. M., GALINDO, P. L., KRET, S., FALKE, M., BEANLAND, R., & GOODHEW, P. J. (2006). An approach to the systematic distortion correction in aberration-corrected HAADF images. Journal of Microscopy, 221(1), 1-7. doi:10.1111/j.1365-2818.2006.01533.x

    DOI: 10.1111/j.1365-2818.2006.01533.x

    Asking culturally neutral questions in engineering (Journal article)

    Goodhew, P. J. (2006). Asking culturally neutral questions in engineering. World Transactions on Engineering and Technology Education, 5(2), 349-352.

    Direct measurement of composition of buried quantum dots using aberration-corrected STEM (Journal article)

    Wang, P., Bleloch, A. L., Falke, M., Ng, J., Missous, M., & Goodhew, P. J. (2006). Direct measurement of composition of buried quantum dots using aberration-corrected STEM. Applied Physics Letters, 89(7), 072111.

    Geometric aspects of lattice contrast visibility in nanocrystalline materials using HAADF STEM (Journal article)

    Wang, P., Bleloch, A., Falke, U., & Goodhew, P. (2006). Geometric aspects of lattice contrast visibility in nanocrystalline materials using HAADF STEM. Ultramicroscopy, 106(4-5), 277-283. doi:10.1016/j.ultramic.2005.09.005

    DOI: 10.1016/j.ultramic.2005.09.005

    Nanometer-scale strain measurements in semiconductors: An innovative approach using the plasmon peak in electron energy loss spectra (Journal article)

    Sanchez, A. M., Beanland, R., Papworth, A. J., Goodhew, P. J., & Gass, M. H. (2006). Nanometer-scale strain measurements in semiconductors: An innovative approach using the plasmon peak in electron energy loss spectra. Applied Physics Letters, 88(5), 051917. doi:10.1063/1.2169904

    DOI: 10.1063/1.2169904

    Quantitative Strain Mapping Applied to Aberration-Corrected HAADF Images (Journal article)

    Sanchez, A. M., Galindo, P. L., Kret, S., Falke, M., Beanland, R., & Goodhew, P. J. (2006). Quantitative Strain Mapping Applied to Aberration-Corrected HAADF Images. Microscopy and microanalysis, 12, 1-10.

    Threshold concepts in engineering education-exploring potential blocks in student understanding (Journal article)

    Baillie, C., Goodhew, P., & Skryabina, E. (2006). Threshold concepts in engineering education-exploring potential blocks in student understanding. International Journal of Engineering Education, 22(5), 955-962.

    2005

    Change sin plasmon peak position in a GaAs/In0.2Ga0.8As structure (Conference Paper)

    Beanland, R., Sanchez, A. M., Papworth, A. J., Gass, M. H., & Goodhew, P. J. (2005). Change sin plasmon peak position in a GaAs/In0.2Ga0.8As structure. In A. G. Cullis, & J. L. Hutchison (Eds.), Microscopy of Semiconducting Materials (pp. 162-166). Oxford: Springer.

    Growth and overgrowth of Ge/Si quantum dots: An observation by atomic resolution HAADF-STEM imaging (Conference Paper)

    Zhi, D., Midgley, P. A., Dunin-Borkowski, R. E., Joyce, B. A., Pashley, D. W., Bleloch, A. L., & Goodhew, P. J. (2005). Growth and overgrowth of Ge/Si quantum dots: An observation by atomic resolution HAADF-STEM imaging. In MRS Vol. 832 (pp. 105-110). Boston: MRS.

    Mapping quantum dot-in-well structures on the nanoscale using the plasmon peak in electron energy loss spectra (Journal article)

    Sánchez, A. M., Beanland, R., Gass, M. H., Papworth, A. J., Goodhew, P. J., & Hopkinson, M. (2005). Mapping quantum dot-in-well structures on the nanoscale using the plasmon peak in electron energy loss spectra. Physical Review B, 72(7). doi:10.1103/PhysRevB.72.075339

    DOI: 10.1103/PhysRevB.72.075339

    Nanoanalysis of InAs/GaAs quantum dots using low-loss EELS spectra (Conference Paper)

    Sanchez, A. M., Gass, M. H., Papworth, A. J., Beanland, R., Drouot, V., & Goodhew, P. J. (2005). Nanoanalysis of InAs/GaAs quantum dots using low-loss EELS spectra. In A. G. Cullis, & J. L. Hutchison (Eds.), Microscopy of Semiconducting Materials Vol. 107 (pp. 259-262). Oxford: Springer.

    V-defects and dislocations in InGaN/GaN heterostructures (Journal article)

    Sánchez, A., Gass, M., Papworth, A., Goodhew, P., Singh, P., Ruterana, P., . . . Lee, H. (2005). V-defects and dislocations in InGaN/GaN heterostructures. Thin Solid Films, 479(1-2), 316-320. doi:10.1016/j.tsf.2004.11.207

    DOI: 10.1016/j.tsf.2004.11.207

    2004

    Defect analysis in InGaN/GaN heterostructures by combined EDX and CTEM (Journal article)

    Sanchez, A. M., Gass, M., Papworth, A. J., Goodhew, P. J., & Ruterana, P. (2004). Defect analysis in InGaN/GaN heterostructures by combined EDX and CTEM. Microscopy and microanalysis, 10(2), 582-583.

    Determination of size and composition of buried InAs/GaAs quantum dots: STEM vs in-plane X-ray scattering (Journal article)

    Zhi, D., Fewster, P. F., Pashley, D. W., Joyce, B. A., Goodhew, P. J., & Jones, T. S. (2004). Determination of size and composition of buried InAs/GaAs quantum dots: STEM vs in-plane X-ray scattering. Design and Nature, 6, 91-94.

    EELS analysis of InGaN/GaN heterostructures using the Ga 3d transitions in epsilon 2 (Journal article)

    Sanchez, A. M., Gass, M., Papworth, A. J., Goodhew, P. J., & Ruterana, P. (2004). EELS analysis of InGaN/GaN heterostructures using the Ga 3d transitions in epsilon 2. Microscopy and microanalysis, 10(2), 864-865.

    Indium fluctuations inside InGaN quantum wells by scanning transmission electron microscopy (Conference Paper)

    Sanchez, A. M., Gass, M., Papworth, A. J., Ruterana, P., Cho, H. K., & Goodhew, P. J. (2004). Indium fluctuations inside InGaN quantum wells by scanning transmission electron microscopy. In EMAG 03 (pp. 131-134). Bristol: IoPP.

    Nanoscale EELS analysis of heterostructures (Journal article)

    Sánchez, A. M., Gass, M., Papworth, A. J., Goodhew, P. J., & Ruterana, P. (2004). Nanoscale EELS analysis of heterostructures. Physical Review B, 70(3). doi:10.1103/PhysRevB.70.035325

    DOI: 10.1103/PhysRevB.70.035325

    Problems associated with high spatial resolution X-ray mapping of multi-layer coatings on float glass (Journal article)

    Papworth, A. J., Hughes, M. J., & Goodhew, P. J. (2004). Problems associated with high spatial resolution X-ray mapping of multi-layer coatings on float glass. Microscopy and microanalysis, 10(2), 646-647.

    STEM-TEM analysis of nitrogen ion implanted 302 stainless steel (Journal article)

    Aggarwal, S., Goodhew, P. J., & Murray, R. T. (2004). STEM-TEM analysis of nitrogen ion implanted 302 stainless steel. Thin Solid Films, 446(1), 12-17. doi:10.1016/S0040-6090(03)01233-1

    DOI: 10.1016/S0040-6090(03)01233-1

    The effect of encapsulation on the morphology and chemical composition of InAs/GaAs quantum dots grown by molecular beam epitaxy (Journal article)

    ZHI, D. (2004). The effect of encapsulation on the morphology and chemical composition of InAs/GaAs quantum dots grown by molecular beam epitaxy. Microelectronic Engineering, 73-74, 604-609. doi:10.1016/S0167-9317(04)00151-0

    DOI: 10.1016/S0167-9317(04)00151-0

    2003

    Determination of size, shape and composition of buried InAs/GaAs quantum dots: scanning transmission electron microscopy vs. in-plane X-ray scattering (Conference Paper)

    Zhi, D., Fewster, P. F., Pashley, D. W., Joyce, B. A., Goodhew, P. J., & Jones, T. S. (2003). Determination of size, shape and composition of buried InAs/GaAs quantum dots: scanning transmission electron microscopy vs. in-plane X-ray scattering. In EMAG 2003 Vol. 180 (pp. 91-94). Bristol: IoPP.

    Indium fluctuations analysis inside InGaN quantum wells by Scanning Transmission Electron Microscopy (Conference Paper)

    Sanchez, A., Gass, M., Papworth, A. J., Ruterana, P., Cho, H. K., & Goodhew, P. J. (2003). Indium fluctuations analysis inside InGaN quantum wells by Scanning Transmission Electron Microscopy. In S. McVitie, & D. McComb (Eds.), EMAG 2003 Vol. 179 (pp. 131-134). Oxford: Institute of Physics Publishing.

    SuperSTEM - the microscope with glasses (Journal article)

    Goodhew, P., & Bleloch, A. (2003). SuperSTEM - the microscope with glasses. Materials World, 11(3), 23-24.

    The Tool Shop or Characterising Your Material (Chapter)

    Goodhew, P. J., & Mannis, A. (2003). The Tool Shop or Characterising Your Material. In C. A. Baillie, & L. Vanasupa (Eds.), Navigating the Materials World (pp. 31-50). London: Academic Press.

    2002

    Interactive Software for Materials Teaching (Journal article)

    Goodhew, P. J. (2002). Interactive Software for Materials Teaching. J Materials Education, 24, 35-40.

    The SuperSTEM; An Aberration Corrected Analytical Microscopy Facility (Conference Paper)

    Bleloch, A. L., Brown, L. M., Brydson, R. M., Craven, A. J., Goodhew, P. J., & Kiely, C. J. (2002). The SuperSTEM; An Aberration Corrected Analytical Microscopy Facility. In A. N. Other (Ed.), Microscopy and Microanalysis Vol. 8 (pp. 470-471). NY: TMS.

    2001

    3-D compositional analysis of quantum dots (Journal article)

    Harvey, A. J., Davock, H., Dunbar, A., Bangert, U., & Goodhew, P. J. (2001). 3-D compositional analysis of quantum dots. J Phys D, 34(4), 636-644. doi:10.1088/0022-3727/34/4/326

    DOI: 10.1088/0022-3727/34/4/326

    Electron Microscopy and Analysis (Book)

    Goodhew, P. J., Humphreys, J., & Beanland, R. (2001). Electron Microscopy and Analysis. London: Taylor & Francis.

    Quantitative compositional analysis of InAs/GaAs quantum dots by STEM (Journal article)

    Zhi, D., Davock, H., Murray, R., Roberts, C., Jones, T. S., Pashley, D. W., . . . Joyce, B. A. (2001). Quantitative compositional analysis of InAs/GaAs quantum dots by STEM. J Appl Phys, 89(4), 2079-2083. doi:10.1063/1.1337921

    DOI: 10.1063/1.1337921

    2000

    A model of dislocation blocking and its application to the development of misfit dislocation arrays (Journal article)

    Goodhew, P. J. (2000). A model of dislocation blocking and its application to the development of misfit dislocation arrays. Philosophical Magazine A, 80(9), 2099-2108. doi:10.1080/01418610008212153

    DOI: 10.1080/01418610008212153

    1999

    Comparison of in situ optical reflectance and post-growth characterisation for quantitative composition and thickness determination of AlxGa1-xAs (Journal article)

    Jothilingam, R., Farrell, T., Joyce, T. B. F., Bullough, T. J., & Goodhew, P. J. (1999). Comparison of in situ optical reflectance and post-growth characterisation for quantitative composition and thickness determination of AlxGa1-xAs. Vacuum, 53, 7-10.

    Strain relaxation in III-V semiconductor heterostructures (Journal article)

    Goodhew, P. J., & Giannakopoulos, K. P. (1999). Strain relaxation in III-V semiconductor heterostructures. Micron, 30.

    1998

    Introduction to Scanning Transmission Electron Microscopy (Book)

    Keyse, R. J., Garratt-Reed, A. J., Goodhew, P. J., & Lorimer, G. W. (1998). Introduction to Scanning Transmission Electron Microscopy (Vol. 39). Oxford: BIOS.

    Materials Science on CD-ROM (Book)

    MATTER, P. T. (1998). Materials Science on CD-ROM. London: Chapman & Hall. Retrieved from http://matter.org.uk/matscicdrom/

    Striation development in CBE-grown vicinal plane InGaAs layers (Journal article)

    Giannakopoulos, K., & Goodhew, P. (1998). Striation development in CBE-grown vicinal plane InGaAs layers. Journal of Crystal Growth, 188(1-4), 26-31. doi:10.1016/S0022-0248(98)00077-3

    DOI: 10.1016/S0022-0248(98)00077-3

    1997

    Dislocation blocking in InxGa1-xAs (x (Journal article)

    MacPherson, G., & Goodhew, P. J. (1997). Dislocation blocking in InxGa1-xAs (x. Appl Phys Lett, 70.

    1996

    A refined scheme for the reduction of threading dislocation densities in In Ga 1− As/GaAs epitaxial layers (Journal article)

    MacPherson, G., & Goodhew, P. J. (1996). A refined scheme for the reduction of threading dislocation densities in In Ga 1− As/GaAs epitaxial layers. Journal of Applied Physics, 80(12), 6706-6710. doi:10.1063/1.363796

    DOI: 10.1063/1.363796

    Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers (Journal article)

    Kidd, P., Dunstan, D., Colson, H., Louren¸o, M., Sacedo´n, A., Gonza´lez-Sanz, F., . . . Goodhew, P. (1996). Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers. Journal of Crystal Growth, 169(4), 649-659. doi:10.1016/S0022-0248(96)00665-3

    DOI: 10.1016/S0022-0248(96)00665-3

    Growth of carbon-doped GaAs, AlGaAs and InGaAs by chemical beam epitaxy and the application of in-situ monitoring (Journal article)

    Joyce, T., Westwater, S., Goodhew, P., & Pritchard, R. (1996). Growth of carbon-doped GaAs, AlGaAs and InGaAs by chemical beam epitaxy and the application of in-situ monitoring. Journal of Crystal Growth, 164(1-4), 371-376. doi:10.1016/0022-0248(96)00019-X

    DOI: 10.1016/0022-0248(96)00019-X

    Plastic relaxation and relaxed buffer layers for semiconductor epitaxy (Journal article)

    Beanland, R., Dunstan, D., & Goodhew, P. (1996). Plastic relaxation and relaxed buffer layers for semiconductor epitaxy. Advances in Physics, 45(2), 87-146. doi:10.1080/00018739600101477

    DOI: 10.1080/00018739600101477

    Sulphur doping of InGaAs using diethylsulphide (Journal article)

    Petkos, G., Goodhew, P., & Joyce, T. (1996). Sulphur doping of InGaAs using diethylsulphide. Journal of Crystal Growth, 164(1-4), 415-419. doi:10.1016/0022-0248(96)00030-9

    DOI: 10.1016/0022-0248(96)00030-9

    1995

    A model for the distribution of misfit dislocations near epitaxial layer interfaces (Journal article)

    Macpherson, G., Goodhew, P. J., & Beanland, R. (1995). A model for the distribution of misfit dislocations near epitaxial layer interfaces. Philosophical Magazine A, 72(6), 1531-1545. doi:10.1080/01418619508243929

    DOI: 10.1080/01418619508243929

    A novel design method for the suppression of edge dislocation formation in step-graded InGaAs/GaAs layers (Journal article)

    MacPherson, G., Beanland, R., & Goodhew, P. J. (1995). A novel design method for the suppression of edge dislocation formation in step-graded InGaAs/GaAs layers. Phil Mag, A73, 1439-1450.

    A study of surface cross-hatch and misfit dislocation structure in In0.15Ga0.85As/GaAs grown by chemical beam epitaxy (Journal article)

    Beanland, R., Aindow, M., Joyce, T. B., Kidd, P., Lourenco, M., & Goodhew, P. J. (1995). A study of surface cross-hatch and misfit dislocation structure in In0.15Ga0.85As/GaAs grown by chemical beam epitaxy. J Crystal Growth, 149, 1-11.

    On the development of misfit dislocation distributions in strained epitaxial layer interfaces (Journal article)

    MacPherson, G., Beanland, R., & Goodhew, P. J. (1995). On the development of misfit dislocation distributions in strained epitaxial layer interfaces. Scripta Met & Mat, 33(1), 123-128.

    The use of diethylsulphide for the doping of GaAs, AlGaAs and InGaAs grown by chemical beam epitaxy (Journal article)

    Joyce, T., Pfeffer, T., Bullough, T., Petkos, G., Goodhew, P., & Jones, A. (1995). The use of diethylsulphide for the doping of GaAs, AlGaAs and InGaAs grown by chemical beam epitaxy. Journal of Crystal Growth, 150, 644-648. doi:10.1016/0022-0248(95)80288-N

    DOI: 10.1016/0022-0248(95)80288-N

    1994

    Dislocation behaviour at heterointerfaces in III–V semiconductors (Journal article)

    Goodhew, P. J. (1994). Dislocation behaviour at heterointerfaces in III–V semiconductors. Journal of Physics and Chemistry of Solids, 55(10), 1107-1114. doi:10.1016/0022-3697(94)90128-7

    DOI: 10.1016/0022-3697(94)90128-7

    Relaxation of InGaAs layers grown on (111)B GaAs (Journal article)

    Sacedon, A., Calle, F., Alvarez, A. L., Calleja, E., Munoz, E., Beanland, R., & Goodhew, P. J. (1994). Relaxation of InGaAs layers grown on (111)B GaAs. Appl Phys Lett, 65, 1-4.

    1990

    The Operation of Transmission and Scanning Electron Microscopes (Book)

    Chescoe, D., & Goodhew, P. J. (1990). The Operation of Transmission and Scanning Electron Microscopes (Vol. 20). Oxford: Oxford Science.

    1988

    Electron Microscopy and Analysis (Book)

    Goodhew, P. J., & Humphreys, F. J. (1988). Electron Microscopy and Analysis. London: Taylor & Francis.

    Light-element Analysis in the Transmission Electron Microscope: WEDX and EELS (Book)

    Budd, P. M., & Goodhew, P. J. (1988). Light-element Analysis in the Transmission Electron Microscope: WEDX and EELS (Vol. 16). Oxford: Oxford Science.

    Proceedings of the 9th European Congress on Electron Microscopy (Conference Paper)

    Goodhew, P. J., & Dickinson, H. G. (Eds.) (1988). Proceedings of the 9th European Congress on Electron Microscopy. In Eurem 88 Vol. 1 (pp. i302). Bristol: Institute of Physics.

    1985

    Thin Foil Preparation for Electron Microscopy (Book)

    Goodhew, P. J. (1985). Thin Foil Preparation for Electron Microscopy (Vol. 11). A. M. Glauert (Ed.), Amsterdam: Elsevier.

    1984

    Specimen Preparation for Transmission Electron Microscopy of Materials (Book)

    Goodhew, P. J. (1984). Specimen Preparation for Transmission Electron Microscopy of Materials (Vol. 3). Oxford: Royal Microscopical Society.

    1975

    Electron Microscopy & Analysis (Book)

    Goodhew, P. J. (1975). Electron Microscopy & Analysis. London: Taylor & Francis.

    1972

    Specimen Preparation in Materials Science (Book)

    Goodhew, P. J. (1972). Specimen Preparation in Materials Science. Amsterdam: North-Holland.
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