Photo of Prof Peter Goodhew

Prof Peter Goodhew FREng

Emeritus Professor of Engineering School of Engineering

    Publications

    2013

    The Scholarship of Teaching and Learning as collaborative working: a case study in shared practice and collective purpose (Journal article)

    Kahn, P., Goodhew, P., Murphy, M., & Walsh, L. (2013). The Scholarship of Teaching and Learning as collaborative working: a case study in shared practice and collective purpose. HIGHER EDUCATION RESEARCH & DEVELOPMENT, 32(6), 901-914. doi:10.1080/07294360.2013.806439

    DOI: 10.1080/07294360.2013.806439

    2011

    Introduction to Transmission Electron Microscopy (Chapter)

    Goodhew, P. J. (2011). Introduction to Transmission Electron Microscopy. In R. Brydson (Ed.), Aberration-Corrected Analytical Electron Microscopy (pp. 296). London: John Wiley.

    2010

    Teaching Engineering (Book)

    Goodhew, P. J. (2010). Teaching Engineering. Liverpool: UKCME.

    2007

    'Active Learning of Materials Science' (Journal article)

    Goodhew, P. J. (2007). 'Active Learning of Materials Science'. Journal of Materials Education, 29(1-2), 43-53. Retrieved from http://www.unit.edu/ICME/

    Active Learning in Materials Science and Engineering (Journal article)

    Goodhew, P. J., & Bullough, T. J. (2007). Active Learning in Materials Science and Engineering. Journal of Materials Education, 28(3-6), 161-169.

    2006

    Geometric aspects of lattice contrast visibility in nanocrystalline materials using HAADF STEM (Journal article)

    Wang, P., Bleloch, A. L., Falke, U., & Goodhew, P. J. (2006). Geometric aspects of lattice contrast visibility in nanocrystalline materials using HAADF STEM. Ultramicroscopy, 106(4-5), 277-283. doi:10.1016/j.ultramic.2005.09.005

    DOI: 10.1016/j.ultramic.2005.09.005

    An approach to the systematic distortion correction in aberration-corrected HAADF images (Journal article)

    SANCHEZ, A. M., GALINDO, P. L., KRET, S., FALKE, M., BEANLAND, R., & GOODHEW, P. J. (2006). An approach to the systematic distortion correction in aberration-corrected HAADF images. Journal of Microscopy, 221(1), 1-7. doi:10.1111/j.1365-2818.2006.01533.x

    DOI: 10.1111/j.1365-2818.2006.01533.x

    Asking culturally neutral questions in engineering (Journal article)

    Goodhew, P. J. (2006). Asking culturally neutral questions in engineering. World Transactions on Engineering and Technology Education, 5(2), 349-352.

    Direct measurement of composition of buried quantum dots using aberration-corrected STEM (Journal article)

    Wang, P., Bleloch, A. L., Falke, M., Ng, J., Missous, M., & Goodhew, P. J. (2006). Direct measurement of composition of buried quantum dots using aberration-corrected STEM. Applied Physics Letters, 89(7), 072111.

    Nanometer-scale strain measurements in semiconductors: An innovative approach using the plasmon peak in electron energy loss spectra (Journal article)

    Sanchez, A. M., Beanland, R., Papworth, A. J., Goodhew, P. J., & Gass, M. H. (2006). Nanometer-scale strain measurements in semiconductors: An innovative approach using the plasmon peak in electron energy loss spectra. Applied Physics Letters, 88(5), 051917. doi:10.1063/1.2169904

    DOI: 10.1063/1.2169904

    Quantitative Strain Mapping Applied to Aberration-Corrected HAADF Images (Journal article)

    Sanchez, A. M., Galindo, P. L., Kret, S., Falke, M., Beanland, R., & Goodhew, P. J. (2006). Quantitative Strain Mapping Applied to Aberration-Corrected HAADF Images. Microscopy and microanalysis, 12, 1-10.

    Threshold concepts in engineering education-exploring potential blocks in student understanding (Journal article)

    Baillie, C., Goodhew, P., & Skryabina, E. (2006). Threshold concepts in engineering education-exploring potential blocks in student understanding. International Journal of Engineering Education, 22(5), 955-962.

    2005

    Mapping quantum dot-in-well structures on the nanoscale using the plasmon peak in electron energy loss spectra (Journal article)

    Sánchez, A. M., Beanland, R., Gass, M. H., Papworth, A. J., Goodhew, P. J., & Hopkinson, M. (n.d.). Mapping quantum dot-in-well structures on the nanoscale using the plasmon peak in electron energy loss spectra. Physical Review B, 72(7). doi:10.1103/physrevb.72.075339

    DOI: 10.1103/physrevb.72.075339

    Change sin plasmon peak position in a GaAs/In0.2Ga0.8As structure (Conference Paper)

    Beanland, R., Sanchez, A. M., Papworth, A. J., Gass, M. H., & Goodhew, P. J. (2005). Change sin plasmon peak position in a GaAs/In0.2Ga0.8As structure. In A. G. Cullis, & J. L. Hutchison (Eds.), Microscopy of Semiconducting Materials (pp. 162-166). Oxford: Springer.

    Growth and overgrowth of Ge/Si quantum dots: An observation by atomic resolution HAADF-STEM imaging (Conference Paper)

    Zhi, D., Midgley, P. A., Dunin-Borkowski, R. E., Joyce, B. A., Pashley, D. W., Bleloch, A. L., & Goodhew, P. J. (2005). Growth and overgrowth of Ge/Si quantum dots: An observation by atomic resolution HAADF-STEM imaging. In MRS Vol. 832 (pp. 105-110). Boston: MRS.

    Nanoanalysis of InAs/GaAs quantum dots using low-loss EELS spectra (Conference Paper)

    Sanchez, A. M., Gass, M. H., Papworth, A. J., Beanland, R., Drouot, V., & Goodhew, P. J. (2005). Nanoanalysis of InAs/GaAs quantum dots using low-loss EELS spectra. In A. G. Cullis, & J. L. Hutchison (Eds.), Microscopy of Semiconducting Materials Vol. 107 (pp. 259-262). Oxford: Springer.

    V-defects and dislocations in InGaN/GaN heterostructures (Journal article)

    Sánchez, A. M., Gass, M., Papworth, A. J., Goodhew, P. J., Singh, P., Ruterana, P., . . . Lee, H. J. (2005). V-defects and dislocations in InGaN/GaN heterostructures. Thin Solid Films, 479(1-2), 316-320. doi:10.1016/j.tsf.2004.11.207

    DOI: 10.1016/j.tsf.2004.11.207

    2004

    The effect of encapsulation on the morphology and chemical composition of InAs/GaAs quantum dots grown by molecular beam epitaxy (Journal article)

    ZHI, D. (2004). The effect of encapsulation on the morphology and chemical composition of InAs/GaAs quantum dots grown by molecular beam epitaxy. Microelectronic Engineering, 73-74, 604-609. doi:10.1016/s0167-9317(04)00151-0

    DOI: 10.1016/s0167-9317(04)00151-0

    Defect analysis in InGaN/GaN heterostructures by combined EDX and CTEM (Journal article)

    Sanchez, A. M., Gass, M., Papworth, A. J., Goodhew, P. J., & Ruterana, P. (2004). Defect analysis in InGaN/GaN heterostructures by combined EDX and CTEM. Microscopy and microanalysis, 10(2), 582-583.

    Determination of size and composition of buried InAs/GaAs quantum dots: STEM vs in-plane X-ray scattering (Journal article)

    Zhi, D., Fewster, P. F., Pashley, D. W., Joyce, B. A., Goodhew, P. J., & Jones, T. S. (2004). Determination of size and composition of buried InAs/GaAs quantum dots: STEM vs in-plane X-ray scattering. Design and Nature, 6, 91-94.

    EELS analysis of InGaN/GaN heterostructures using the Ga 3d transitions in epsilon 2 (Journal article)

    Sanchez, A. M., Gass, M., Papworth, A. J., Goodhew, P. J., & Ruterana, P. (2004). EELS analysis of InGaN/GaN heterostructures using the Ga 3d transitions in epsilon 2. Microscopy and microanalysis, 10(2), 864-865.

    Indium fluctuations inside InGaN quantum wells by scanning transmission electron microscopy (Conference Paper)

    Sanchez, A. M., Gass, M., Papworth, A. J., Ruterana, P., Cho, H. K., & Goodhew, P. J. (2004). Indium fluctuations inside InGaN quantum wells by scanning transmission electron microscopy. In EMAG 03 (pp. 131-134). Bristol: IoPP.

    Nanoscale EELS analysis ofInGaN∕GaNheterostructures (Journal article)

    Sánchez, A. M., Gass, M., Papworth, A. J., Goodhew, P. J., & Ruterana, P. (n.d.). Nanoscale EELS analysis ofInGaN∕GaNheterostructures. Physical Review B, 70(3). doi:10.1103/physrevb.70.035325

    DOI: 10.1103/physrevb.70.035325

    Problems associated with high spatial resolution X-ray mapping of multi-layer coatings on float glass (Journal article)

    Papworth, A. J., Hughes, M. J., & Goodhew, P. J. (2004). Problems associated with high spatial resolution X-ray mapping of multi-layer coatings on float glass. Microscopy and microanalysis, 10(2), 646-647.

    Scanning transmission electron microscopy (STEM)–transmission electron microscopy (TEM) analysis of nitrogen ion implanted austenitic 302 stainless steel (Journal article)

    Aggarwal, S., Goodhew, P. J., & Murray, R. T. (2004). Scanning transmission electron microscopy (STEM)–transmission electron microscopy (TEM) analysis of nitrogen ion implanted austenitic 302 stainless steel. Thin Solid Films, 446(1), 12-17. doi:10.1016/s0040-6090(03)01233-1

    DOI: 10.1016/s0040-6090(03)01233-1

    2003

    Determination of size, shape and composition of buried InAs/GaAs quantum dots: scanning transmission electron microscopy vs. in-plane X-ray scattering (Conference Paper)

    Zhi, D., Fewster, P. F., Pashley, D. W., Joyce, B. A., Goodhew, P. J., & Jones, T. S. (2003). Determination of size, shape and composition of buried InAs/GaAs quantum dots: scanning transmission electron microscopy vs. in-plane X-ray scattering. In EMAG 2003 Vol. 180 (pp. 91-94). Bristol: IoPP.

    Indium fluctuations analysis inside InGaN quantum wells by Scanning Transmission Electron Microscopy (Conference Paper)

    Sanchez, A., Gass, M., Papworth, A. J., Ruterana, P., Cho, H. K., & Goodhew, P. J. (2003). Indium fluctuations analysis inside InGaN quantum wells by Scanning Transmission Electron Microscopy. In S. McVitie, & D. McComb (Eds.), EMAG 2003 Vol. 179 (pp. 131-134). Oxford: Institute of Physics Publishing.

    SuperSTEM - the microscope with glasses (Journal article)

    Goodhew, P., & Bleloch, A. (2003). SuperSTEM - the microscope with glasses. Materials World, 11(3), 23-24.

    The Tool Shop or Characterising Your Material (Chapter)

    Goodhew, P. J., & Mannis, A. (2003). The Tool Shop or Characterising Your Material. In C. A. Baillie, & L. Vanasupa (Eds.), Navigating the Materials World (pp. 31-50). London: Academic Press.

    2002

    Interactive Software for Materials Teaching (Journal article)

    Goodhew, P. J. (2002). Interactive Software for Materials Teaching. J Materials Education, 24, 35-40.

    The SuperSTEM; An Aberration Corrected Analytical Microscopy Facility (Conference Paper)

    Bleloch, A. L., Brown, L. M., Brydson, R. M., Craven, A. J., Goodhew, P. J., & Kiely, C. J. (2002). The SuperSTEM; An Aberration Corrected Analytical Microscopy Facility. In A. N. Other (Ed.), Microscopy and Microanalysis Vol. 8 (pp. 470-471). NY: TMS.

    2001

    Electron Microscopy and Analysis (Book)

    Goodhew, P. J., Humphreys, J., & Beanland, R. (2001). Electron Microscopy and Analysis. London: Taylor & Francis.

    Quantitative compositional analysis of InAs/GaAs quantum dots by scanning transmission electron microscopy (Journal article)

    Zhi, D., Davock, H., Murray, R., Roberts, C., Jones, T. S., Pashley, D. W., . . . Joyce, B. A. (2001). Quantitative compositional analysis of InAs/GaAs quantum dots by scanning transmission electron microscopy. Journal of Applied Physics, 89(4), 2079-2083. doi:10.1063/1.1337921

    DOI: 10.1063/1.1337921

    Three-dimensional compositional analysis of quantum dots (Journal article)

    Harvey, A., Davock, H., Dunbar, A., Bangert, U., & Goodhew, P. J. (2001). Three-dimensional compositional analysis of quantum dots. Journal of Physics D: Applied Physics, 34(4), 636-644. doi:10.1088/0022-3727/34/4/326

    DOI: 10.1088/0022-3727/34/4/326

    2000

    A model of dislocation blocking and its application to the development of misfit dislocation arrays (Journal article)

    Goodhew, P. J. (2000). A model of dislocation blocking and its application to the development of misfit dislocation arrays. Philosophical Magazine A, 80(9), 2099-2108. doi:10.1080/01418610008212153

    DOI: 10.1080/01418610008212153

    1999

    Comparison of in situ optical reflectance and post-growth characterisation for quantitative composition and thickness determination of AlxGa1-xAs (Journal article)

    Jothilingam, R., Farrell, T., Joyce, T. B., Bullough, T. J., & Goodhew, P. J. (1999). Comparison of in situ optical reflectance and post-growth characterisation for quantitative composition and thickness determination of AlxGa1-xAs. Vacuum, 53(1-2), 7-10. doi:10.1016/s0042-207x(98)00411-4

    DOI: 10.1016/s0042-207x(98)00411-4

    Strain relaxation in III-V semiconductor heterostructures (Journal article)

    Goodhew, P. J., & Giannakopoulos, K. P. (1999). Strain relaxation in III-V semiconductor heterostructures. Micron, 30.

    1998

    Introduction to Scanning Transmission Electron Microscopy (Book)

    Keyse, R. J., Garratt-Reed, A. J., Goodhew, P. J., & Lorimer, G. W. (1998). Introduction to Scanning Transmission Electron Microscopy (Vol. 39). Oxford: BIOS.

    Materials Science on CD-ROM (Book)

    MATTER, P. T. (1998). Materials Science on CD-ROM. London: Chapman & Hall. Retrieved from http://matter.org.uk/matscicdrom/

    Striation development in CBE-grown vicinal plane InGaAs layers (Journal article)

    Giannakopoulos, K. P., & Goodhew, P. J. (1998). Striation development in CBE-grown vicinal plane InGaAs layers. Journal of Crystal Growth, 188(1-4), 26-31. doi:10.1016/s0022-0248(98)00077-3

    DOI: 10.1016/s0022-0248(98)00077-3

    1997

    Dislocation blocking in InxGa1-xAs (x (Journal article)

    MacPherson, G., & Goodhew, P. J. (1997). Dislocation blocking in InxGa1-xAs (x. Appl Phys Lett, 70.

    1996

    A refined scheme for the reduction of threading dislocation densities in InxGa1−xAs/GaAs epitaxial layers (Journal article)

    MacPherson, G., & Goodhew, P. J. (1996). A refined scheme for the reduction of threading dislocation densities in InxGa1−xAs/GaAs epitaxial layers. Journal of Applied Physics, 80(12), 6706-6710. doi:10.1063/1.363796

    DOI: 10.1063/1.363796

    Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers (Journal article)

    Kidd, P., Dunstan, D. J., Colson, H. G., Louren¸o, M. A., Sacedo´n, A., Gonza´lez-Sanz, F., . . . Goodhew, P. J. (1996). Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers. Journal of Crystal Growth, 169(4), 649-659. doi:10.1016/s0022-0248(96)00665-3

    DOI: 10.1016/s0022-0248(96)00665-3

    Growth of carbon-doped GaAs, AlGaAs and InGaAs by chemical beam epitaxy and the application of in-situ monitoring (Journal article)

    Joyce, T. B., Westwater, S. P., Goodhew, P. J., & Pritchard, R. E. (1996). Growth of carbon-doped GaAs, AlGaAs and InGaAs by chemical beam epitaxy and the application of in-situ monitoring. Journal of Crystal Growth, 164(1-4), 371-376. doi:10.1016/0022-0248(96)00019-x

    DOI: 10.1016/0022-0248(96)00019-x

    Plastic relaxation and relaxed buffer layers for semiconductor epitaxy (Journal article)

    Beanland, R., Dunstan, D. J., & Goodhew, P. J. (1996). Plastic relaxation and relaxed buffer layers for semiconductor epitaxy. Advances in Physics, 45(2), 87-146. doi:10.1080/00018739600101477

    DOI: 10.1080/00018739600101477

    Sulphur doping of InGaAs using diethylsulphide (Journal article)

    Petkos, G. M., Goodhew, P. J., & Joyce, T. B. (1996). Sulphur doping of InGaAs using diethylsulphide. Journal of Crystal Growth, 164(1-4), 415-419. doi:10.1016/0022-0248(96)00030-9

    DOI: 10.1016/0022-0248(96)00030-9

    1995

    A model for the distribution of misfit dislocations near epitaxial layer interfaces (Journal article)

    Macpherson, G., Goodhew, P. J., & Beanland, R. (1995). A model for the distribution of misfit dislocations near epitaxial layer interfaces. Philosophical Magazine A, 72(6), 1531-1545. doi:10.1080/01418619508243929

    DOI: 10.1080/01418619508243929

    A novel design method for the suppression of edge dislocation formation in step-graded InGaAs/GaAs layers (Journal article)

    MacPherson, G., Beanland, R., & Goodhew, P. J. (1995). A novel design method for the suppression of edge dislocation formation in step-graded InGaAs/GaAs layers. Phil Mag, A73, 1439-1450.

    A study of surface cross-hatch and misfit dislocation structure in grown by chemical beam epitaxy (Journal article)

    Beanland, R., Aindow, M., Joyce, T. B., Kidd, P., Lourenço, M., & Goodhew, P. J. (1995). A study of surface cross-hatch and misfit dislocation structure in grown by chemical beam epitaxy. Journal of Crystal Growth, 149(1-2), 1-11. doi:10.1016/0022-0248(94)00669-5

    DOI: 10.1016/0022-0248(94)00669-5

    On the development of misfit dislocation distributions in strained epitaxial layer interfaces (Journal article)

    MacPherson, G., Beanland, R., & Goodhew, P. J. (1995). On the development of misfit dislocation distributions in strained epitaxial layer interfaces. Scripta Met & Mat, 33(1), 123-128.

    The use of diethylsulphide for the doping of GaAs, AlGaAs and InGaAs grown by chemical beam epitaxy (Journal article)

    Joyce, T. B., Pfeffer, T. L., Bullough, T. J., Petkos, G., Goodhew, P. J., & Jones, A. C. (1995). The use of diethylsulphide for the doping of GaAs, AlGaAs and InGaAs grown by chemical beam epitaxy. Journal of Crystal Growth, 150, 644-648. doi:10.1016/0022-0248(95)80288-n

    DOI: 10.1016/0022-0248(95)80288-n

    1994

    Dislocation behaviour at heterointerfaces in III–V semiconductors (Journal article)

    Goodhew, P. J. (1994). Dislocation behaviour at heterointerfaces in III–V semiconductors. Journal of Physics and Chemistry of Solids, 55(10), 1107-1114. doi:10.1016/0022-3697(94)90128-7

    DOI: 10.1016/0022-3697(94)90128-7

    Relaxation of InGaAs layers grown on (111)B GaAs (Journal article)

    Sacedon, A., Calle, F., Alvarez, A. L., Calleja, E., Munoz, E., Beanland, R., & Goodhew, P. J. (1994). Relaxation of InGaAs layers grown on (111)B GaAs. Appl Phys Lett, 65, 1-4.

    1990

    The Operation of Transmission and Scanning Electron Microscopes (Book)

    Chescoe, D., & Goodhew, P. J. (1990). The Operation of Transmission and Scanning Electron Microscopes (Vol. 20). Oxford: Oxford Science.

    1988

    Electron Microscopy and Analysis (Book)

    Goodhew, P. J., & Humphreys, F. J. (1988). Electron Microscopy and Analysis. London: Taylor & Francis.

    Light-element Analysis in the Transmission Electron Microscope: WEDX and EELS (Book)

    Budd, P. M., & Goodhew, P. J. (1988). Light-element Analysis in the Transmission Electron Microscope: WEDX and EELS (Vol. 16). Oxford: Oxford Science.

    Proceedings of the 9th European Congress on Electron Microscopy (Conference Paper)

    Goodhew, P. J., & Dickinson, H. G. (Eds.) (1988). Proceedings of the 9th European Congress on Electron Microscopy. In Eurem 88 Vol. 1 (pp. i302). Bristol: Institute of Physics.

    1985

    Thin Foil Preparation for Electron Microscopy (Book)

    Goodhew, P. J. (1985). Thin Foil Preparation for Electron Microscopy (Vol. 11). A. M. Glauert (Ed.), Amsterdam: Elsevier.

    1984

    Specimen Preparation for Transmission Electron Microscopy of Materials (Book)

    Goodhew, P. J. (1984). Specimen Preparation for Transmission Electron Microscopy of Materials (Vol. 3). Oxford: Royal Microscopical Society.

    1975

    Electron Microscopy & Analysis (Book)

    Goodhew, P. J. (1975). Electron Microscopy & Analysis. London: Taylor & Francis.

    1972

    Specimen Preparation in Materials Science (Book)

    Goodhew, P. J. (1972). Specimen Preparation in Materials Science. Amsterdam: North-Holland.