Photo of Prof Paul Chalker

Prof Paul Chalker BSc(Hons), PhD, FRSC, FIMMM

Professor Mechanical, Materials & Aerospace Eng

Publications

2020

Microstructure and mechanical properties of Cu-modified AlSi10Mg fabricated by Laser-Powder Bed Fusion (Journal article)

Garmendia, X., Chalker, S., Bilton, M., Sutcliffe, C. J., & Chalker, P. R. (2020). Microstructure and mechanical properties of Cu-modified AlSi10Mg fabricated by Laser-Powder Bed Fusion. Materialia, 100590. doi:10.1016/j.mtla.2020.100590

DOI: 10.1016/j.mtla.2020.100590

2019

Low temperature growth and optical properties of alpha-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition (Journal article)

Roberts, J. W., Chalker, P. R., Ding, B., Oliver, R. A., Gibbon, J. T., Jones, L. A. H., . . . Massabuau, F. C. -P. (2019). Low temperature growth and optical properties of alpha-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition. JOURNAL OF CRYSTAL GROWTH, 528. doi:10.1016/j.jcrysgro.2019.125254

DOI: 10.1016/j.jcrysgro.2019.125254

A superlattice approach to the synthesis of strontium bismuth tantalate thin films using liquid-injection-MOCVD (Conference Paper)

Potter, R. J., Awad, A., Chalker, P. R., Peng, W., Jones, A. C., Noakes, T. C. Q., & Bailey, P. (2005). A superlattice approach to the synthesis of strontium bismuth tantalate thin films using liquid-injection-MOCVD. In Materials Research Society Symposium Proceedings Vol. 902 (pp. 1-6).

Atomic layer deposited alpha-Ga2O3 solar-blind photodetectors (Journal article)

Moloney, J., Tesh, O., Singh, M., Roberts, J. W., Jarman, J. C., Lee, L. C., . . . Massabuau, F. C. -P. (2019). Atomic layer deposited alpha-Ga2O3 solar-blind photodetectors. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 52(47). doi:10.1088/1361-6463/ab3b76

DOI: 10.1088/1361-6463/ab3b76

Comparison of atomic layer deposited Al2O3 and (Ta2O5)(0.12)(Al2O3)(0.88) gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (Journal article)

Partida-Manzanera, T., Zaidi, Z. H., Roberts, J. W., Dolmanan, S. B., Lee, K. B., Houston, P. A., . . . Potter, R. J. (2019). Comparison of atomic layer deposited Al2O3 and (Ta2O5)(0.12)(Al2O3)(0.88) gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors. JOURNAL OF APPLIED PHYSICS, 126(3). doi:10.1063/1.5049220

DOI: 10.1063/1.5049220

3D-structured multi-walled carbon nanotubes/copper nanowires composite as a porous current collector for the enhanced silicon-based anode (Journal article)

Zhao, Y., Liu, C., Sun, Y., Yi, R., Cai, Y., Li, Y., . . . Zhao, C. (2019). 3D-structured multi-walled carbon nanotubes/copper nanowires composite as a porous current collector for the enhanced silicon-based anode. JOURNAL OF ALLOYS AND COMPOUNDS, 803, 505-513. doi:10.1016/j.jallcom.2019.06.302

DOI: 10.1016/j.jallcom.2019.06.302

Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices (Conference Paper)

Cai, Y., Wang, Y., Cui, M., Liu, W., Wen, H., Zhao, C., . . . IEEE. (2019). Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices. In 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019). Retrieved from http://gateway.webofknowledge.com/

The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters (Conference Paper)

Cui, M., Cai, Y., Bu, Q., Liu, W., Wen, H., Mitrovic, I. Z., . . . Zhao, C. (2019). The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters. In 2019 International Conference on IC Design and Technology (ICICDT). IEEE. doi:10.1109/icicdt.2019.8790909

DOI: 10.1109/icicdt.2019.8790909

AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HFETs Based DC-DC Boost Converters with Integrated Gate Drivers (Conference Paper)

Cui, M., Bu, Q., Cai, Y., Sun, R., Liu, W., Wen, H., . . . Zhao, C. (2019). AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HFETs Based DC-DC Boost Converters with Integrated Gate Drivers. In ICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia.

Monolithic Integration Design of GaN-based Power Chip Including Gate Driver for High-Temperature DC-DC Converters (Journal article)

Cui, M., Bu, Q., Cai, Y., Sun, R., Liu, W., Wen, H., . . . Zhao, C. (n.d.). Monolithic Integration Design of GaN-based Power Chip Including Gate Driver for High-Temperature DC-DC Converters. Japanese Journal of Applied Physics. doi:10.7567/1347-4065/ab1313

DOI: 10.7567/1347-4065/ab1313

Alloyed Cu/Si core-shell nanoflowers on the three-dimensional graphene foam as an anode for lithium-ion batteries (Journal article)

Liu, C., Zhao, Y., Yi, R., Sun, Y., Li, Y., Yang, L., . . . Zhao, C. (2019). Alloyed Cu/Si core-shell nanoflowers on the three-dimensional graphene foam as an anode for lithium-ion batteries. ELECTROCHIMICA ACTA, 306, 45-53. doi:10.1016/j.electacta.2019.03.071

DOI: 10.1016/j.electacta.2019.03.071

Effect of HCl cleaning on InSb-Al2O3 MOS capacitors (Journal article)

Vavasour, O. J., Jefferies, R., Walker, M., Roberts, J. W., Meakin, N. R., Gammon, P. M., . . . Ashley, T. (2019). Effect of HCl cleaning on InSb-Al2O3 MOS capacitors. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 34(3). doi:10.1088/1361-6641/ab0331

DOI: 10.1088/1361-6641/ab0331

2018

Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs (Conference Paper)

Cui, M., Cai, Y., Lam, S., Liu, W., Zhao, C., Mitrovic, I. Z., . . . Zhao, C. (2018). Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs. In 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC). IEEE. doi:10.1109/edssc.2018.8487160

DOI: 10.1109/edssc.2018.8487160

The Over-Reset Phenomenon in Ta2O5 RRAM Device Investigated by the RTN-Based Defect Probing Technique (Journal article)

Chai, Z., Zhang, W., Freitas, P., Hatem, F., Zhang, J. F., Marsland, J., . . . Robertson, J. (2018). The Over-Reset Phenomenon in Ta2O5 RRAM Device Investigated by the RTN-Based Defect Probing Technique. IEEE ELECTRON DEVICE LETTERS, 39(7), 955-958. doi:10.1109/LED.2018.2833149

DOI: 10.1109/LED.2018.2833149

Band alignments at Ga2O3 heterojunction interfaces with Si and Ge (Journal article)

Gibbon, J. T., Jones, L., Roberts, J. W., Althobaiti, M., Chalker, P. R., Mitrovic, I. Z., & Dhanak, V. R. (2018). Band alignments at Ga2O3 heterojunction interfaces with Si and Ge. AIP ADVANCES, 8(6). doi:10.1063/1.5034459

DOI: 10.1063/1.5034459

Band alignments at Ga2O3 heterojunction interfaces with Si and Ge (Journal article)

Gibbon, J. T., Jones, L., Roberts, J. W., Althobaiti, M., Chalker, P. R., Mitrovic, I. Z., & Dhanak, V. R. (2018). Band alignments at Ga2O3 heterojunction interfaces with Si and Ge. AIP Advances, 8(6), 065011. doi:10.1063/1.5034459

DOI: 10.1063/1.5034459

Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs (Journal article)

Zaidi, Z. H., Lee, K. B., Roberts, J. W., Guiney, I., Qian, H., Jiang, S., . . . Houston, P. A. (2018). Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. JOURNAL OF APPLIED PHYSICS, 123(18). doi:10.1063/1.5027822

DOI: 10.1063/1.5027822

The 2018 GaN power electronics roadmap (Journal article)

Amano, H., Baines, Y., Beam, E., Borga, M., Bouchet, T., Chalker, P. R., . . . Zhang, Y. (2018). The 2018 GaN power electronics roadmap. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 51(16). doi:10.1088/1361-6463/aaaf9d

DOI: 10.1088/1361-6463/aaaf9d

alpha-Ga2O3 grown by low temperature atomic layer deposition on sapphire (Journal article)

Roberts, J. W., Jarman, J. C., Johnstone, D. N., Midgley, P. A., Chalker, P. R., Oliver, R. A., & Massabuau, F. C. -P. (2018). alpha-Ga2O3 grown by low temperature atomic layer deposition on sapphire. JOURNAL OF CRYSTAL GROWTH, 487, 23-27. doi:10.1016/j.jcrysgro.2018.02.014

DOI: 10.1016/j.jcrysgro.2018.02.014

Elucidation of ALD MgZnO deposition processes using low energy ion scattering (Journal article)

Werner, M., Roberts, J. W., Potter, R. J., Dawson, K., & Chalker, P. R. (2018). Elucidation of ALD MgZnO deposition processes using low energy ion scattering. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(2). doi:10.1116/1.5015958

DOI: 10.1116/1.5015958

A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density (Journal article)

Jin, J., Zhang, J., Shaw, A., Kudina, V. N., Mitrovic, I. Z., Wrench, J. S., . . . Hall, S. (2018). A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 51(6). doi:10.1088/1361-6463/aaa4a2

DOI: 10.1088/1361-6463/aaa4a2

Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells (Chapter)

Gass, M. H., Bullough, T. J., Papworth, A., Thomas, S., Joyce, T. B., Chalker, P. R., . . . Balkan, N. (2018). Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells. In Microscopy of Semiconducting Materials 2003 (pp. 225-228). doi:10.1201/9781351074636

DOI: 10.1201/9781351074636

2017

Atomic Layer Deposition of HfO2 Gate Dielectric with Surface Treatments and Post-metallization Annealing for Germanium MOSFETs (Conference Paper)

Liu, Q., Lam, S., Mu, Y., Zhao, C. Z., Zhao, Y., Fang, Y., . . . IEEE. (2017). Atomic Layer Deposition of HfO2 Gate Dielectric with Surface Treatments and Post-metallization Annealing for Germanium MOSFETs. In 2017 IEEE 17TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) (pp. 491-494). Retrieved from http://gateway.webofknowledge.com/

Total Dose Effects and Bias Instabilities of (NH4)(2)S Passivated Ge MOS Capacitors With HfxZr1-xOy Thin Films (Journal article)

Mu, Y., Fang, Y., Zhao, C. Z., Zhao, C., Lu, Q., Qi, Y., . . . Chalker, P. R. (2017). Total Dose Effects and Bias Instabilities of (NH4)(2)S Passivated Ge MOS Capacitors With HfxZr1-xOy Thin Films. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64(12), 2913-2921. doi:10.1109/TNS.2017.2768566

DOI: 10.1109/TNS.2017.2768566

Effects of biased irradiation on charge trapping in HfO2 dielectric thin films (Conference Paper)

Mu, Y., Zhao, C. Z., Lu, Q., Zhao, C., Qi, Y., Lam, S., . . . Chalker, P. R. (2017). Effects of biased irradiation on charge trapping in HfO2 dielectric thin films. In AIP Conference Proceedings Vol. 1877. doi:10.1063/1.4999899

DOI: 10.1063/1.4999899

Investigation of Anomalous Capacitance-Voltage Behavior Caused by Interface Dipoles and the Effect of Post-Metal-Annealing (Conference Paper)

Lu, Q., Zhao, C. Z., Zhao, C., Taylor, S., & Chalker, P. R. (2017). Investigation of Anomalous Capacitance-Voltage Behavior Caused by Interface Dipoles and the Effect of Post-Metal-Annealing. In 4TH INTERNATIONAL CONFERENCE ON THE ADVANCEMENT OF MATERIALS AND NANOTECHNOLOGY (ICAMN IV 2016) Vol. 1877. doi:10.1063/1.4999875

DOI: 10.1063/1.4999875

Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping (Journal article)

Sedghi, N., Li, H., Brunell, I. F., Dawson, K., Guo, Y., Potter, R. J., . . . Chalker, P. R. (2017). Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping. APPLIED PHYSICS LETTERS, 111(9). doi:10.1063/1.4991879

DOI: 10.1063/1.4991879

Investigation of Anomalous Hysteresis in MOS Devices With ZrO2 Gate Dielectrics (Journal article)

Lu, Q., Qi, Y., Zhao, C. Z., Liu, C., Zhao, C., Taylor, S., & Chalker, P. R. (2017). Investigation of Anomalous Hysteresis in MOS Devices With ZrO2 Gate Dielectrics. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 17(3), 526-530. doi:10.1109/TDMR.2017.2731796

DOI: 10.1109/TDMR.2017.2731796

Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications (Conference Paper)

Sawangsri, K., Das, P., Supardan, S. N., Mitrovic, I. Z., Hall, S., Mahapatra, R., . . . Chalker, P. R. (2017). Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications. In MICROELECTRONIC ENGINEERING Vol. 178 (pp. 178-181). doi:10.1016/j.mee.2017.04.010

DOI: 10.1016/j.mee.2017.04.010

Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements (Conference Paper)

Shaw, A., Jin, J. D., Mitrovic, I. Z., Hall, S., Wrench, J. S., & Chalker, P. R. (2017). Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements. In MICROELECTRONIC ENGINEERING Vol. 178 (pp. 213-216). doi:10.1016/j.mee.2017.05.043

DOI: 10.1016/j.mee.2017.05.043

Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications (Journal article)

Sawangsri, K., Das, P., Supardan, S. N., Mitrovic, I. Z., Hall, S., Mahapatra, R., . . . Chalker, P. R. (2017). Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications. Microelectronic Engineering, 178, 178-181. doi:10.1016/j.mee.2017.04.010

DOI: 10.1016/j.mee.2017.04.010

Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements (Journal article)

Shaw, A., Jin, J. D., Mitrovic, I. Z., Hall, S., Wrench, J. S., & Chalker, P. R. (2017). Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements. Microelectronic Engineering, 178, 213-216. doi:10.1016/j.mee.2017.05.043

DOI: 10.1016/j.mee.2017.05.043

The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM (Journal article)

Sedghi, N., Li, H., Brunell, I. F., Dawson, K., Potter, R. J., Guo, Y., . . . Chalker, P. R. (2017). The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM. APPLIED PHYSICS LETTERS, 110(10). doi:10.1063/1.4978033

DOI: 10.1063/1.4978033

Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition (Journal article)

Jin, J., Wrench, J. S., Gibbon, J. T., Hesp, D., Shaw, A., Mitrovic, I. Z., . . . Hall, S. (2017). Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition. IEEE TRANSACTIONS ON ELECTRON DEVICES, 64(3), 1225-1230. doi:10.1109/TED.2016.2647284

DOI: 10.1109/TED.2016.2647284

2016

ZnO MESFETS for application to Intelligent Windows (Journal article)

Hall, S., Chalker, P. R., & Mitrovic, I. (2016). ZnO MESFETS for application to Intelligent Windows. Impact, 2016(2), 49-51. doi:10.21820/23987073.2016.2.49

DOI: 10.21820/23987073.2016.2.49

Wider Memory Window in Ta2O5 RRAM by Doping (Conference Paper)

Sedghi, N., Li, H., Brunell, I., Potter, R., Hall, S., Dawson, K., . . . Robertson, J. (2016). Wider Memory Window in Ta2O5 RRAM by Doping. In 47th IEEE Semiconductor Interface Specialists Conference. Catamaran Hotel, San Diego, CA.

Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements (Journal article)

Mu, Y., Zhao, C. Z., Lu, Q., Zhao, C., Qi, Y., Lam, S., . . . Chalker, P. R. (2017). Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64(1), 673-682. doi:10.1109/TNS.2016.2633549

DOI: 10.1109/TNS.2016.2633549

Atomic layer deposition of Nb-doped ZnO for thin film transistors (Journal article)

Shaw, A., Wrench, J. S., Jin, J. D., Whittles, T. J., Mitrovic, I. Z., Raja, M., . . . Hall, S. (2016). Atomic layer deposition of Nb-doped ZnO for thin film transistors. APPLIED PHYSICS LETTERS, 109(22). doi:10.1063/1.4968194

DOI: 10.1063/1.4968194

Physical and Electrical Characterization of Mg-Doped ZnO Thin-Film Transistors (Conference Paper)

Shaw, A., Whittles, T. J., Mitrovic, I. Z., Jin, J. D., Wrench, J. S., Hesp, D., . . . Hall, S. (2015). Physical and Electrical Characterization of Mg-Doped ZnO Thin-Film Transistors. In ESSDERC 2015 PROCEEDINGS OF THE 45TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (pp. 206-209). Retrieved from http://gateway.webofknowledge.com/

Anomalous Capacitance-Voltage Hysteresis in MOS Devices with ZrO2 and HfO2 Dielectrics (Conference Paper)

Lu, Q., Qi, Y., Zhao, C. Z., Zhao, C., Taylor, S., Chalker, P. R., & IEEE. (2016). Anomalous Capacitance-Voltage Hysteresis in MOS Devices with ZrO2 and HfO2 Dielectrics. In 2016 5TH INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE). Retrieved from http://gateway.webofknowledge.com/

Tunnel-Barrier Rectifiers for Optical Nantennas (Journal article)

Mitrovic, I. Z., Weerakkody, A. D., Sedghi, N., Hall, S., Ralph, J. F., Wrench, J. S., . . . Beeby, S. (2016). Tunnel-Barrier Rectifiers for Optical Nantennas. DIELECTRICS FOR NANOSYSTEMS 7: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 72(2), 287-299. doi:10.1149/07202.0287ecst

DOI: 10.1149/07202.0287ecst

Photochemical atomic layer deposition and etching (Journal article)

Chalker, P. R. (2016). Photochemical atomic layer deposition and etching. SURFACE & COATINGS TECHNOLOGY, 291, 258-263. doi:10.1016/j.surfcoat.2016.02.046

DOI: 10.1016/j.surfcoat.2016.02.046

Composition used in making coated quantum dot beads for use in fabrication of quantum dot-based light-emitting devices, comprises powder comprising beads having primary matrix material, quantum dot nanoparticles, and surface coating (Patent)

Werner, M., Gresty, N., Pickett, N., Chalker, P., Harris, J., Naasani, I., & Nasaani, I. (n.d.). WO2014140936-A2; US2014264196-A1; WO2014140936-A3; TW201503419-A; KR2015126961-A; CN105051152-A; EP2970762-A2, Composition used in making coated quantum dot beads for use in fabrication of quantum dot-based light-emitting devices, comprises powder comprising beads having primary matrix material, quantum dot nanoparticles, and surface coating.

Fabrication of composite functional body/substrate for aerospace or automotive industry or for electronics industry, comprises selectively melting build of functional material with directed energy beam (Patent)

Sutcliffe, C., & Chalker, P. R. (n.d.). WO2006131716-A2; AU2006256588-A1; EP1893372-A2; CA2609905-A1; JP2008546208-W; US2009117403-A1; US7754137-B2; WO2006131716-A3; EP1893372-B1; ES2477866-T3; CA2609905-C, Fabrication of composite functional body/substrate for aerospace or automotive industry or for electronics industry, comprises selectively melting build of functional material with directed energy beam.

Formation of cerium doped high dielectric film for use in semiconductor device, involves providing metal source precursor and specific cerium precursor to substrate (Patent)

Chalker, P. R., & Heys, P. N. (n.d.). WO2009143452-A1; TW200949005-A, Formation of cerium doped high dielectric film for use in semiconductor device, involves providing metal source precursor and specific cerium precursor to substrate.

Formation of cerium-doped high-k dielectric film for improving high-k gate property of, e.g. memory application, comprises delivering metal-source precursor and cerium precursor to substrate by chemical phase deposition process (Patent)

Chalker, P. R., & Heys, P. N. (n.d.). WO2009143456-A1; TW200951242-A; EP2297379-A1; US2011165401-A1; CN102137952-A; JP2011525699-W; KR2012007949-A; CN102137952-B; US8613975-B2; SG166557-A1; SG166557-B; IL209378-A; TW467045-B1, Formation of cerium-doped high-k dielectric film for improving high-k gate property of, e.g. memory application, comprises delivering metal-source precursor and cerium precursor to substrate by chemical phase deposition process.

Formation of high-dielectric constant dielectric film used for memory and/or logic application, comprises vapor deposition process involving delivering metal source precursor and titanium precursor(s) to substrate (Patent)

Chalker, P. R., Heys, P. N., & Paul Raymond, C. (n.d.). WO2009143460-A1; TW200949939-A; EP2281073-A1; KR2011017397-A; CN102066608-A; US2011151227-A1; JP2011521479-W; SG166589-A1; IL209379-A, Formation of high-dielectric constant dielectric film used for memory and/or logic application, comprises vapor deposition process involving delivering metal source precursor and titanium precursor(s) to substrate.

High-k dielectric fun-forming lattice for film for use in improving gate property of semiconductor device, e.g. memory application, comprises zirconium oxide and/or hafnium oxide, and titanium atoms (Patent)

Chalker, P. R., & Heys, P. N. (n.d.). WO2009143458-A1; TW200949006-A, High-k dielectric fun-forming lattice for film for use in improving gate property of semiconductor device, e.g. memory application, comprises zirconium oxide and/or hafnium oxide, and titanium atoms.

Method for fabricating quadrupole mass spectrometer (QMS) component e.g. ion source, involves exposing several layers of bed of curable material to the incident radiation, to produce several layers of cured material of QMS component (Patent)

Chalker, P., Sutcliffe, C., & Taylor, S. (n.d.). WO2010026426-A2; WO2010026426-A3; EP2324486-A2; US2011174970-A1; JP2012502420-W; HK1158359-A0; US8551388-B2, Method for fabricating quadrupole mass spectrometer (QMS) component e.g. ion source, involves exposing several layers of bed of curable material to the incident radiation, to produce several layers of cured material of QMS component.

New mixed metal oxide, particularly strontium-hafnium-titanium oxide used as dielectric in electrical, electronic, magnetic, mechanical, optical or thermal device (Patent)

Suchomel, M., Rosseinsky, M., Niu, H., Chalker, P., Yan, L., & Chalker, P. R. (n.d.). WO2010116184-A1; KR2011138274-A; CA2757921-A1; EP2417062-A1; US2012091541-A1; CN102482114-A; JP2012523361-W; HK1167256-A0; IN201107452-P4; SG175114-A1, New mixed metal oxide, particularly strontium-hafnium-titanium oxide used as dielectric in electrical, electronic, magnetic, mechanical, optical or thermal device.

Polyoxypropylene-polyoxyethylene alkyl-ether prodn.|comprises polycrystalline diamond diaphragm on a support, a detection device for measuring deflection, etc (Patent)

Totterdell, D. H. J., & Chalker, P. R. (n.d.). EP579405-A; GB2268583-A; EP579405-A1; US5365789-A; GB2268583-B, Polyoxypropylene-polyoxyethylene alkyl-ether prodn.|comprises polycrystalline diamond diaphragm on a support, a detection device for measuring deflection, etc.

Preparing a functional device comprising a substrate and an element comprising a mixed metal oxide by exposing discrete volatilized amounts of a strontium precursor, a hafnium or zirconium precursor and a titanium precursor to the substrate (Patent)

Suchomel, M., Rosseinsky, M., Niu, H., Chalker, P., & Yan, L. (n.d.). WO2011124913-A1, Preparing a functional device comprising a substrate and an element comprising a mixed metal oxide by exposing discrete volatilized amounts of a strontium precursor, a hafnium or zirconium precursor and a titanium precursor to the substrate.

X=ray window and method of mfr.|is a thin diamond membrane with on one surface an integral array of diamond rib supports (Patent)

Chalker, P. R., & Paul, R. C. (n.d.). GB2288272-A; EP676772-A1; JP7294700-A; GB2288272-B; EP676772-B1; DE69500941-E, X=ray window and method of mfr.|is a thin diamond membrane with on one surface an integral array of diamond rib supports.

Real-time and on-site gamma-ray radiation response testing system for semiconductor devices and its applications (Journal article)

Mu, Y., Zhao, C. Z., Qi, Y., Lam, S., Zhao, C., Lu, Q., . . . Chalker, P. R. (2016). Real-time and on-site gamma-ray radiation response testing system for semiconductor devices and its applications. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 372, 14-28. doi:10.1016/j.nimb.2016.01.035

DOI: 10.1016/j.nimb.2016.01.035

Silver Ink Formulations for Sinter-free Printing of Conductive Films (Journal article)

Black, K., Singh, J., Mehta, D., Sung, S., Sutcliffe, C. J., & Chalker, P. R. (2016). Silver Ink Formulations for Sinter-free Printing of Conductive Films. SCIENTIFIC REPORTS, 6. doi:10.1038/srep20814

DOI: 10.1038/srep20814

Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics (Journal article)

Roberts, J. W., Chalker, P. R., Lee, K. B., Houston, P. A., Cho, S. J., Thayne, I. G., . . . Humphreys, C. J. (2016). Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics. APPLIED PHYSICS LETTERS, 108(7). doi:10.1063/1.4942093

DOI: 10.1063/1.4942093

CVD deposition of Nb based materials for SRF cavities (Conference Paper)

Pizzol, P., Valizadeh, R., Malyshev, O. B., Stenning, G. B. G., Heil, T., Pattalwar, S., & Chalker, P. R. (2016). CVD deposition of Nb based materials for SRF cavities. In IPAC 2016 - Proceedings of the 7th International Particle Accelerator Conference (pp. 2241-2244).

Controlling the physical and electrical properties of ALD grown ZnO using Nb as a dopant (Conference Paper)

Shaw, A., Jin, J. D., Mitrovic, I. Z., Hall, S., Wrench, J. S., Chalker, P. R., & IEEE. (2016). Controlling the physical and electrical properties of ALD grown ZnO using Nb as a dopant. In 2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2016) (pp. 28-31). Retrieved from http://gateway.webofknowledge.com/

2015

Electrical Properties and Interfacial Studies of HfxTi1-xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates (Journal article)

Lu, Q., Mu, Y., Roberts, J. W., Althobaiti, M., Dhanak, V. R., Wu, J., . . . Chalker, P. R. (2015). Electrical Properties and Interfacial Studies of HfxTi1-xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates. MATERIALS, 8(12), 8169-8182. doi:10.3390/ma8125454

DOI: 10.3390/ma8125454

Hafnia and alumina on sulphur passivated germanium (Journal article)

Althobaiti, M., Mather, S., Sedghi, N., Dhanak, V. R., Mitrovic, I. Z., Hall, S., & Chalker, P. R. (2015). Hafnia and alumina on sulphur passivated germanium. Vacuum, 122, 306-309. doi:10.1016/j.vacuum.2015.03.017

DOI: 10.1016/j.vacuum.2015.03.017

A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor (Journal article)

Cho, S. J., Roberts, J. W., Guiney, I., Li, X., Ternent, G., Floros, K., . . . Thayne, I. G. (2015). A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor. MICROELECTRONIC ENGINEERING, 147, 277-280. doi:10.1016/j.mee.2015.04.067

DOI: 10.1016/j.mee.2015.04.067

Enhanced low voltage nonlinearity in resonant tunneling metal–insulator–insulator–metal nanostructures (Conference Paper)

Weerakkody, A. D., Sedghi, N., Mitrovic, I. Z., van Zalinge, H., Nemr Noureddine, I., Hall, S., . . . Durose, K. (2015). Enhanced low voltage nonlinearity in resonant tunneling metal–insulator–insulator–metal nanostructures. In Microelectronic Engineering Vol. 147 (pp. 298-301). Elsevier BV. doi:10.1016/j.mee.2015.04.110

DOI: 10.1016/j.mee.2015.04.110

(Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films (Journal article)

Chalker, P. R., Marshall, P. A., Dawson, K., Sutcliffe, C. J., Brunell, I. F., Sedghi, N., . . . Potter, R. J. (2015). (Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films. ECS Transactions, 69(7), 139-145. doi:10.1149/06907.0139ecst

DOI: 10.1149/06907.0139ecst

Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing (Journal article)

Lu, Q., Zhao, C., Mu, Y., Zhao, C. Z., Taylor, S., & Chalker, P. R. (2015). Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing. MATERIALS, 8(8), 4829-4842. doi:10.3390/ma8084829

DOI: 10.3390/ma8084829

Atomic-layer deposited thulium oxide as a passivation layer on germanium (Journal article)

Mitrovic, I. Z., Hall, S., Althobaiti, M., Hesp, D., Dhanak, V. R., Santoni, A., . . . Schamm-Chardon, S. (2015). Atomic-layer deposited thulium oxide as a passivation layer on germanium. JOURNAL OF APPLIED PHYSICS, 117(21). doi:10.1063/1.4922121

DOI: 10.1063/1.4922121

Tailoring Precursors for Deposition: Synthesis, Structure, and Thermal Studies of Cyclopentadienylcopper(I) Isocyanide Complexes (Journal article)

Willcocks, A. M., Pugh, T., Cosham, S. D., Hamilton, J., Sung, S. L., Heil, T., . . . Johnson, A. L. (2015). Tailoring Precursors for Deposition: Synthesis, Structure, and Thermal Studies of Cyclopentadienylcopper(I) Isocyanide Complexes. INORGANIC CHEMISTRY, 54(10), 4869-4881. doi:10.1021/acs.inorgchem.5b00448

DOI: 10.1021/acs.inorgchem.5b00448

Engineered Ta2O5/Al2O3 and Nb2O5/Al2O3 tunnel barriers for next-generation low turn-on voltage high-speed rectifiers (Poster)

Mitrovic, I., Sedghi, N., Weerakkody, D., Ralph, J. F., Hall, S., Wrench, J., & Chalker, P. R. (n.d.). Engineered Ta2O5/Al2O3 and Nb2O5/Al2O3 tunnel barriers for next-generation low turn-on voltage high-speed rectifiers. Poster session presented at the meeting of European Materials Research Society (EMRS 2015). Lille, France.

Heteroleptic titanium alkoxides as single-source precursors for MOCVD of micro-structured TiO2 (Journal article)

Ashraf, S., Aspinall, H. C., Bacsa, J., Chalker, P. R., Davies, H. O., Jones, A. C., . . . Wrench, J. S. (2015). Heteroleptic titanium alkoxides as single-source precursors for MOCVD of micro-structured TiO2. POLYHEDRON, 85, 761-769. doi:10.1016/j.poly.2014.10.007

DOI: 10.1016/j.poly.2014.10.007

Vacuum ultraviolet photochemical selective area atomic layer deposition of Al2O3 dielectrics (Journal article)

Chalker, P. R., Marshall, P. A., Dawson, K., Brunell, I. F., Sutcliffe, C. J., & Potter, R. J. (2015). Vacuum ultraviolet photochemical selective area atomic layer deposition of Al2O3 dielectrics. AIP ADVANCES, 5(1). doi:10.1063/1.4905887

DOI: 10.1063/1.4905887

2014

Compositional tuning of atomic layer deposited MgZnO for thin film transistors (Journal article)

Wrench, J. S., Brunell, I. F., Chalker, P. R., Jin, J. D., Shaw, A., Mitrovic, I. Z., & Hall, S. (2014). Compositional tuning of atomic layer deposited MgZnO for thin film transistors. APPLIED PHYSICS LETTERS, 105(20). doi:10.1063/1.4902389

DOI: 10.1063/1.4902389

Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement (Journal article)

Zhao, C., Zhao, C. Z., Lu, Q., Yan, X., Taylor, S., & Chalker, P. R. (2014). Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement. MATERIALS, 7(10), 6965-6981. doi:10.3390/ma7106965

DOI: 10.3390/ma7106965

Dielectric Relaxation in Lanthanide Doped/Based Oxides Used for High-k Layers (Conference Paper)

Zhao, C. Z., Taylor, S., Zhao, C., & Chalker, P. R. (n.d.). Dielectric Relaxation in Lanthanide Doped/Based Oxides Used for High-k Layers. In Advanced Materials Research Vol. 1024 (pp. 331-334). Trans Tech Publications, Ltd.. doi:10.4028/www.scientific.net/amr.1024.331

DOI: 10.4028/www.scientific.net/amr.1024.331

Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm (Journal article)

Zhao, C., Zhao, C. Z., Taylor, S., & Chalker, P. R. (2014). Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm. MATERIALS, 7(7), 5117-5145. doi:10.3390/ma7075117

DOI: 10.3390/ma7075117

Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With GeO2/Al2O3 Stack (Journal article)

Ma, J., Zhang, J. F., Ji, Z., Benbakhti, B., Zhang, W. D., Zheng, X. F., . . . Chalker, P. R. (2014). Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With GeO2/Al2O3 Stack. IEEE TRANSACTIONS ON ELECTRON DEVICES, 61(5), 1307-1315. doi:10.1109/TED.2014.2314178

DOI: 10.1109/TED.2014.2314178

Energy Distribution of Positive Charges in Al2O3/GeO2/Ge pMOSFETs (Journal article)

Ma, J., Zhang, J. F., Ji, Z., Benbakhti, B., Zhang, W., Mitard, J., . . . Chalker, P. (2014). Energy Distribution of Positive Charges in Al2O3/GeO2/Ge pMOSFETs. IEEE ELECTRON DEVICE LETTERS, 35(2), 160-162. doi:10.1109/LED.2013.2295516

DOI: 10.1109/LED.2013.2295516

Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature (Journal article)

Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Dhanak, V. R., Linhart, W. M., Veal, T. D., . . . Dimoulas, A. (2014). Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature. JOURNAL OF APPLIED PHYSICS, 115(11). doi:10.1063/1.4868091

DOI: 10.1063/1.4868091

Interface Engineering Routes for a Future CMOS Ge-based Technology (Journal article)

Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Sedghi, N., Hall, S., Dhanak, V. R., . . . Ostling, M. (2014). Interface Engineering Routes for a Future CMOS Ge-based Technology. DIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 61(2), 73-88. doi:10.1149/06102.0073ecst

DOI: 10.1149/06102.0073ecst

Physical and electrical characterization of Ce-HfO2 thin films deposited by thermal atomic layer deposition (Journal article)

King, P. J., Sedghi, N., Hall, S., Mitrovic, I. Z., Chalker, P. R., Werner, M., & Hindley, S. (2014). Physical and electrical characterization of Ce-HfO2 thin films deposited by thermal atomic layer deposition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 32(3). doi:10.1116/1.4826174

DOI: 10.1116/1.4826174

2013

Dielectric relaxation of high-k oxides (Journal article)

Zhao, C., Zhao, C. Z., Werner, M., Taylor, S., & Chalker, P. (2013). Dielectric relaxation of high-k oxides. NANOSCALE RESEARCH LETTERS, 8. doi:10.1186/1556-276X-8-456

DOI: 10.1186/1556-276X-8-456

Atomic layer deposition of Ga-doped ZnO transparent conducting oxide substrates for CdTe-based photovoltaics (Journal article)

Chalker, P. R., Marshall, P. A., Romani, S., Roberts, J. W., Irvine, S. J. C., Lamb, D. A., . . . Williams, P. A. (2013). Atomic layer deposition of Ga-doped ZnO transparent conducting oxide substrates for CdTe-based photovoltaics. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 31(1). doi:10.1116/1.4765642

DOI: 10.1116/1.4765642

Atomic layer deposition of Ti-HfO2 dielectrics (Journal article)

Werner, M., King, P. J., Hindley, S., Romani, S., Mather, S., Chalker, P. R., . . . van den Berg, J. A. (2013). Atomic layer deposition of Ti-HfO2 dielectrics. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 31(1). doi:10.1116/1.4748570

DOI: 10.1116/1.4748570

Electron trapping at the high-kappa/GeO2 interface: The role of bound states (Journal article)

Sedghi, N., Ralph, J. F., Mitrovic, I. Z., Chalker, P. R., & Hall, S. (2013). Electron trapping at the high-kappa/GeO2 interface: The role of bound states. APPLIED PHYSICS LETTERS, 102(9). doi:10.1063/1.4794544

DOI: 10.1063/1.4794544

GaN-based radial heterostructure nanowires grown by MBE and ALD (Conference Paper)

Lari, L., Ross, I. M., Walther, T., Black, K., Cheze, C., Geelhaar, L., . . . IOP. (2013). GaN-based radial heterostructure nanowires grown by MBE and ALD. In 18TH MICROSCOPY OF SEMICONDUCTING MATERIALS CONFERENCE (MSM XVIII) Vol. 471. doi:10.1088/1742-6596/471/1/012039

DOI: 10.1088/1742-6596/471/1/012039

Grain size dependence of dielectric relaxation in cerium oxide as high-k layer (Journal article)

Zhao, C., Zhao, C. Z., Werner, M., Taylor, S., Chalker, P., & King, P. (2013). Grain size dependence of dielectric relaxation in cerium oxide as high-k layer. NANOSCALE RESEARCH LETTERS, 8. doi:10.1186/1556-276X-8-172

DOI: 10.1186/1556-276X-8-172

Impact of Cerium Oxide's Grain Size for Dielectric Relaxation (Conference Paper)

Zhao, C., Zhao, C. Z., Werner, M., Taylor, S., Chalker, P., & King, P. (2013). Impact of Cerium Oxide's Grain Size for Dielectric Relaxation. In PROCEEDINGS OF THE 2013 20TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2013) (pp. 57-60). Retrieved from http://gateway.webofknowledge.com/

Interface engineering of Ge using thulium oxide: Band line-up study (Journal article)

Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Sedghi, N., Hall, S., Dhanak, V. R., . . . Östling, M. (2013). Interface engineering of Ge using thulium oxide: Band line-up study. Microelectronic Engineering, 109, 204-207. doi:10.1016/j.mee.2013.03.160

DOI: 10.1016/j.mee.2013.03.160

Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition (Journal article)

Mather, S., Sedghi, N., Althobaiti, M., Mitrovic, I. Z., Dhanak, V., Chalker, P. R., & Hall, S. (2013). Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition. MICROELECTRONIC ENGINEERING, 109, 126-128. doi:10.1016/j.mee.2013.03.032

DOI: 10.1016/j.mee.2013.03.032

Radiation Response Analyzer of Semiconductor Dies (Conference Paper)

Yifei, M., Cezhou, Z., Shengmao, S., Yue, Z., Mitrovic, I., Taylor, S., & Chalker, P. (2013). Radiation Response Analyzer of Semiconductor Dies. In PROCEEDINGS OF THE 2013 20TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2013) (pp. 682-685). Retrieved from http://gateway.webofknowledge.com/

Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure (Journal article)

Ma, J., Zhang, J. F., Ji, Z., Benbakhti, B., Duan, M., Zhang, W., . . . Chalker, P. (2013). Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure. MICROELECTRONIC ENGINEERING, 109, 43-45. doi:10.1016/j.mee.2013.03.018

DOI: 10.1016/j.mee.2013.03.018

2012

Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements (Journal article)

Tao, J., Zhao, C. Z., Zhao, C., Taechakumput, P., Werner, M., Taylor, S., & Chalker, P. R. (2012). Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements. MATERIALS, 5(6), 1005-1032. doi:10.3390/ma5061005

DOI: 10.3390/ma5061005

Densification characteristics of chromia/alumina castables by particle size distribution (Journal article)

Zhao, J., Kim, T., Kim, G., Hwang, K., & Bae, D. (2012). Densification characteristics of chromia/alumina castables by particle size distribution. NANOSCALE RESEARCH LETTERS, 7, 1-4. doi:10.1186/1556-276X-7-8

DOI: 10.1186/1556-276X-7-8

'Ce doped hafnium oxide on silicon' (Conference Paper)

Sedghi, N., King, P., Werner, M., Davey, W. M., Mitrovic, I., Chalker, P., . . . Hindley, S. (2012). 'Ce doped hafnium oxide on silicon'. In Semiconductor Interface Specialist Conference (pp. 2). San Diego: IEEE/SISC.

Advanced CMOS Gate Stack: Present Research Progress (Journal article)

Zhao, C., Zhao, C. Z., Werner, M., Taylor, S., & Chalker, P. R. (2012). Advanced CMOS Gate Stack: Present Research Progress. ISRN Nanotechnology, 2012, 1-35. doi:10.5402/2012/689023

DOI: 10.5402/2012/689023

Atomic layer deposition of anatase TiO2 coating on silica particles: growth, characterization and evaluation as photocatalysts for methyl orange degradation and hydrogen production (Journal article)

Williams, P. A., Ireland, C. P., King, P. J., Chater, P. A., Boldrin, P., Palgrave, R. G., . . . Rosseinsky, M. J. (2012). Atomic layer deposition of anatase TiO2 coating on silica particles: growth, characterization and evaluation as photocatalysts for methyl orange degradation and hydrogen production. JOURNAL OF MATERIALS CHEMISTRY, 22(38), 20203-20209. doi:10.1039/c2jm33446a

DOI: 10.1039/c2jm33446a

Atomic layer deposition of germanium-doped zinc oxide films with tuneable ultraviolet emission (Journal article)

Chalker, P. R., Marshall, P. A., King, P. J., Dawson, K., Romani, S., Williams, P. A., . . . Rosseinsky, M. J. (2012). Atomic layer deposition of germanium-doped zinc oxide films with tuneable ultraviolet emission. JOURNAL OF MATERIALS CHEMISTRY, 22(25), 12824-12829. doi:10.1039/c2jm31391j

DOI: 10.1039/c2jm31391j

Characterization of Electron Traps in Si-Capped Ge MOSFETs With HfO2/SiO2 Gate Stack (Journal article)

Benbakhti, B., Zhang, J. F., Ji, Z., Zhang, W., Mitard, J., Kaczer, B., . . . Chalker, P. (2012). Characterization of Electron Traps in Si-Capped Ge MOSFETs With HfO2/SiO2 Gate Stack. IEEE ELECTRON DEVICE LETTERS, 33(12), 1681-1683. doi:10.1109/LED.2012.2218565

DOI: 10.1109/LED.2012.2218565

Dielectric Relaxation of Lanthanide-Based Ternary Oxides: Physical and Mathematical Models (Journal article)

Zhao, C., Zhao, C. Z., Tao, J., Werner, M., Taylor, S., & Chalker, P. R. (2012). Dielectric Relaxation of Lanthanide-Based Ternary Oxides: Physical and Mathematical Models. JOURNAL OF NANOMATERIALS. doi:10.1155/2012/241470

DOI: 10.1155/2012/241470

Dielectric Relaxation of Lanthanide-based Ternary Oxides (Conference Paper)

Zhao, C. Z., Tao, J., Zhao, C., Werner, M., Taylor, S., & Chalker, P. R. (2012). Dielectric Relaxation of Lanthanide-based Ternary Oxides. In 2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012) (pp. 89-92). Retrieved from http://gateway.webofknowledge.com/

Making shape memory polymers reprocessable and reusable by a simple chemical method (Journal article)

Ahmad, M., Luo, J. K., Purnawali, H., Huang, W. M., King, P. J., Chalker, P. R., . . . Geng, J. (2012). Making shape memory polymers reprocessable and reusable by a simple chemical method. JOURNAL OF MATERIALS CHEMISTRY, 22(17), 8192-8194. doi:10.1039/c2jm30489a

DOI: 10.1039/c2jm30489a

Making shape memory polymers reprocessable and reusable by a simple chemical method (vol 22, pg 8192, 2012) (Journal article)

Ahmad, M., Luo, J. K., Purnawali, H., Huang, W. M., King, P. J., Chalker, P. R., . . . Geng, J. (2012). Making shape memory polymers reprocessable and reusable by a simple chemical method (vol 22, pg 8192, 2012). JOURNAL OF MATERIALS CHEMISTRY, 22(48), 25493. Retrieved from http://gateway.webofknowledge.com/

Preparation of TiO2 nanotube/nanoparticle composite particles and their applications in dye-sensitized solar cells (Journal article)

Lee, C. H., Rhee, S. W., & Choi, H. W. (2012). Preparation of TiO2 nanotube/nanoparticle composite particles and their applications in dye-sensitized solar cells. NANOSCALE RESEARCH LETTERS, 7. doi:10.1186/1556-276X-7-48

DOI: 10.1186/1556-276X-7-48

Ternary Pt-Ru-SnO2 hybrid architectures: unique carbon-mediated 1-D configuration and their electrocatalytic activity to methanol oxidation (vol 22, pg 7104, 2012) (Journal article)

Yang, S., Zhao, C., Ge, C., Dong, X., Liu, X., Liu, Y., . . . Li, Z. (2012). Ternary Pt-Ru-SnO2 hybrid architectures: unique carbon-mediated 1-D configuration and their electrocatalytic activity to methanol oxidation (vol 22, pg 7104, 2012). JOURNAL OF MATERIALS CHEMISTRY, 22(48), 25489. Retrieved from http://gateway.webofknowledge.com/

Thermal Stability of Neodymium Aluminates High-kappa Dielectric Deposited by Liquid Injection MOCVD Using Single-Source Heterometallic Alkoxide Precursors (Journal article)

Taechakumput, P., Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Gaskell, J. M., . . . Chen, S. (2012). Thermal Stability of Neodymium Aluminates High-kappa Dielectric Deposited by Liquid Injection MOCVD Using Single-Source Heterometallic Alkoxide Precursors. JOURNAL OF NANOMATERIALS. doi:10.1155/2012/891079

DOI: 10.1155/2012/891079

2011

Atomic Layer Deposition of Gallium-Doped Zinc Oxide Transparent Conducting Oxide films (Conference Paper)

Chalker, P. R., Marshall, P. A., Romani, S., Rosseinsky, M. J., Rushworth, S., Williams, P. A., . . . Ridealgh, J. (2011). Atomic Layer Deposition of Gallium-Doped Zinc Oxide Transparent Conducting Oxide films. In TRANSPARENT CONDUCTING OXIDES AND APPLICATIONS Vol. 1315 (pp. 39-44). doi:10.1557/opl.2011.711

DOI: 10.1557/opl.2011.711

Cation ordering within the perovskite block of a six-layer Ruddlesden-Popper oxide from layer-by-layer growth - artificial interfaces in complex unit cells (Journal article)

Yan, L., Niu, H. J., Duong, G. V., Suchomel, M. R., Bacsa, J., Chalker, P. R., . . . Rosseinsky, M. J. (2011). Cation ordering within the perovskite block of a six-layer Ruddlesden-Popper oxide from layer-by-layer growth - artificial interfaces in complex unit cells. CHEMICAL SCIENCE, 2(2), 261-272. doi:10.1039/c0sc00482k

DOI: 10.1039/c0sc00482k

Ce(IV) Complexes with Donor-Functionalized Alkoxide Ligands: Improved Precursors for Chemical Vapor Deposition of CeO2 (Journal article)

Aspinall, H. C., Bacsa, J., Jones, A. C., Wrench, J. S., Black, K., Chalker, P. R., . . . Odedra, R. (2011). Ce(IV) Complexes with Donor-Functionalized Alkoxide Ligands: Improved Precursors for Chemical Vapor Deposition of CeO2. Inorganic Chemistry, 50(22), 11644-11652. doi:10.1021/ic201593s

DOI: 10.1021/ic201593s

CuO/Ta2O5 core/shell nanoparticles produced by arc-discharge in water (Journal article)

Delaportas, D., Svarnas, P., Alexandrou, I., Georga, S. N., Krontiras, C. A., Xanthopoulos, N. I., . . . Chalker, P. R. (2011). CuO/Ta2O5 core/shell nanoparticles produced by arc-discharge in water. MATERIALS LETTERS, 65(15-16), 2337-2340. doi:10.1016/j.matlet.2011.05.044

DOI: 10.1016/j.matlet.2011.05.044

Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient (Journal article)

Zhao, C. Z., Werner, M., Taylor, S., Chalker, P. R., Jones, A. C., & Zhao, C. (2011). Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient. NANOSCALE RESEARCH LETTERS, 6. doi:10.1007/s11671-010-9782-z

DOI: 10.1007/s11671-010-9782-z

Dimethylzinc adduct chemistry revisited: MOCVD of vertically aligned ZnO nanowires using the dimethylzinc 1,4-dioxane adduct (Journal article)

Kanjolia, R., Jones, A. C., Ashraf, S., Bacsa, J., Black, K., Chalker, P. R., . . . Heys, P. N. (2011). Dimethylzinc adduct chemistry revisited: MOCVD of vertically aligned ZnO nanowires using the dimethylzinc 1,4-dioxane adduct. JOURNAL OF CRYSTAL GROWTH, 315(1), 292-296. doi:10.1016/j.jcrysgro.2010.09.016

DOI: 10.1016/j.jcrysgro.2010.09.016

Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN-AlGaN axial heterostructure nanowires (Journal article)

Lari, L., Walther, T., Gass, M. H., Geelhaar, L., Cheze, C., Riechert, H., . . . Chalker, P. R. (2011). Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN-AlGaN axial heterostructure nanowires. JOURNAL OF CRYSTAL GROWTH, 327(1), 27-34. doi:10.1016/j.jcrysgro.2011.06.004

DOI: 10.1016/j.jcrysgro.2011.06.004

Effect of deposition temperature on the properties of CeO2 films grown by atomic layer deposition (Journal article)

King, P. J., Werner, M., Chalker, P. R., Jones, A. C., Aspinall, H. C., Basca, J., . . . Heys, P. N. (2011). Effect of deposition temperature on the properties of CeO2 films grown by atomic layer deposition. THIN SOLID FILMS, 519(13), 4192-4195. doi:10.1016/j.tsf.2011.02.025

DOI: 10.1016/j.tsf.2011.02.025

MOCVD of Vertically Aligned ZnO Nanowires Using Bidentate Ether Adducts of Dimethylzinc (Journal article)

Ashraf, S., Jones, A. C., Bacsa, J., Steiner, A., Chalker, P. R., Beahan, P., . . . Heys, P. N. (2011). MOCVD of Vertically Aligned ZnO Nanowires Using Bidentate Ether Adducts of Dimethylzinc. CHEMICAL VAPOR DEPOSITION, 17(1-3), 45-53. doi:10.1002/cvde.201006881

DOI: 10.1002/cvde.201006881

Metal Organic Chemical Vapour Deposition of Vertically Aligned ZnO Nanowires Using Oxygen Donor Adducts (Journal article)

Hindley, S., Jones, A. C., Ashraf, S., Bacsa, J., Steiner, A., Chalker, P. R., . . . Odedra, R. (2011). Metal Organic Chemical Vapour Deposition of Vertically Aligned ZnO Nanowires Using Oxygen Donor Adducts. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 11(9), 8294-8301. doi:10.1166/jnn.2011.5038

DOI: 10.1166/jnn.2011.5038

Properties of GaN Nanowires Grown by Molecular Beam Epitaxy (Journal article)

Geelhaar, L., Cheze, C., Jenichen, B., Brandt, O., Pfueller, C., Muench, S., . . . Riechert, H. (2011). Properties of GaN Nanowires Grown by Molecular Beam Epitaxy. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 17(4), 878-888. doi:10.1109/JSTQE.2010.2098396

DOI: 10.1109/JSTQE.2010.2098396

SrHf0.67Ti0.33O3 high-k films deposited on Si by pulsed laser deposition (Journal article)

Yan, L., Xu, Z. L., Grygiel, C., McMitchell, S. R. C., Suchomel, M. R., Bacsa, J., . . . Rosseinsky, M. J. (2011). SrHf0.67Ti0.33O3 high-k films deposited on Si by pulsed laser deposition. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 104(1), 447-451. doi:10.1007/s00339-011-6257-8

DOI: 10.1007/s00339-011-6257-8

SrHfO3 Films Grown on Si(100) by Plasma-Assisted Atomic Layer Deposition (Journal article)

Black, K., Werner, M., Rowlands-Jones, R., Chalker, P. R., & Rosseinsky, M. J. (2011). SrHfO3 Films Grown on Si(100) by Plasma-Assisted Atomic Layer Deposition. CHEMISTRY OF MATERIALS, 23(10), 2518-2520. doi:10.1021/cm200315u

DOI: 10.1021/cm200315u

Synthesis and Characterization of Polyurethane-Based Shape-Memory Polymers for Tailored T-g around Body Temperature for Medical Applications (Journal article)

Ahmad, M., Luo, J., Xu, B., Purnawali, H., King, P. J., Chalker, P. R., . . . Miraftab, M. (2011). Synthesis and Characterization of Polyurethane-Based Shape-Memory Polymers for Tailored T-g around Body Temperature for Medical Applications. MACROMOLECULAR CHEMISTRY AND PHYSICS, 212(6), 592-602. doi:10.1002/macp.201000540

DOI: 10.1002/macp.201000540

2010

A-Site Order Control in Mixed Conductor NdBaCo2O5+delta Films through Manipulation of Growth Kinetics (Journal article)

Grygiel, C., McMitchell, S. R. C., Xu, Z., Yan, L., Niu, H. J., Giap, D., . . . Rosseinsky, M. J. (2010). A-Site Order Control in Mixed Conductor NdBaCo2O5+delta Films through Manipulation of Growth Kinetics. CHEMISTRY OF MATERIALS, 22(6), 1955-1957. doi:10.1021/cm9037022

DOI: 10.1021/cm9037022

A New Method for the Growth of Zinc Oxide Nanowires by MOCVD using Oxygen-Donor Adducts of Dimethylzinc (Journal article)

Black, K., Chalker, P. R., Jones, A. C., King, P. J., Roberts, J. L., & Heys, P. N. (2010). A New Method for the Growth of Zinc Oxide Nanowires by MOCVD using Oxygen-Donor Adducts of Dimethylzinc. CHEMICAL VAPOR DEPOSITION, 16(1-3), 106-111. doi:10.1002/cvde.200906831

DOI: 10.1002/cvde.200906831

Investigation of New 2,5-Dimethylpyrrolyl Titanium Alkylamide and Alkoxide Complexes as Precursors for the Liquid Injection MOCVD of TiO2 (Journal article)

Black, K., Jones, A. C., Bacsa, J., Chalker, P. R., Marshall, P. A., Davies, H. O., . . . Critchlow, G. W. (2010). Investigation of New 2,5-Dimethylpyrrolyl Titanium Alkylamide and Alkoxide Complexes as Precursors for the Liquid Injection MOCVD of TiO2. CHEMICAL VAPOR DEPOSITION, 16(1-3), 93-99. doi:10.1002/cvde.200906818

DOI: 10.1002/cvde.200906818

'GaN, AlGaN, HfO2 based radial heterostructure nanowires' (Journal article)

Lari, L., Walther, T., Black, K., Murray, R. T., Bullough, T. J., Chalker, P. R., . . . Riechert, H. (2010). 'GaN, AlGaN, HfO2 based radial heterostructure nanowires'. Journal of Physics: Conference Series, 209(1).

Linear Ion Trap Fabricated Using Rapid Manufacturing Technology (Journal article)

Clare, A. T., Gao, L., Brkic, B., Chalker, P. R., & Taylor, S. (2010). Linear Ion Trap Fabricated Using Rapid Manufacturing Technology. JOURNAL OF THE AMERICAN SOCIETY FOR MASS SPECTROMETRY, 21(2), 317-322. doi:10.1016/j.jasms.2009.10.020

DOI: 10.1016/j.jasms.2009.10.020

Liquid injection atomic layer deposition of silver nanoparticles (Journal article)

Chalker, P. R., Romani, S., Marshall, P. A., Rosseinsky, M. J., Rushworth, S., & Williams, P. A. (2010). Liquid injection atomic layer deposition of silver nanoparticles. NANOTECHNOLOGY, 21(40). doi:10.1088/0957-4484/21/40/405602

DOI: 10.1088/0957-4484/21/40/405602

The optical properties of vertically aligned ZnO nanowires deposited using a dimethylzinc adduct (Journal article)

Black, K., Jones, A. C., Alexandrou, I., Heys, P. N., & Chalker, P. R. (2010). The optical properties of vertically aligned ZnO nanowires deposited using a dimethylzinc adduct. NANOTECHNOLOGY, 21(4). doi:10.1088/0957-4484/21/4/045701

DOI: 10.1088/0957-4484/21/4/045701

2009

MOCVD and ALD of CeO2 Thin Films using a Novel Monomeric Ce-IV Alkoxide Precursor (Journal article)

Wrench, J. S., Black, K., Aspinall, H. C., Jones, A. C., Bacsa, J., Chalker, P. R., . . . Heys, P. N. (2009). MOCVD and ALD of CeO2 Thin Films using a Novel Monomeric Ce-IV Alkoxide Precursor. CHEMICAL VAPOR DEPOSITION, 15(10-12), 259-+. doi:10.1002/cvde.200904279

DOI: 10.1002/cvde.200904279

High-k dielectrics' radiation response to X-ray and γ-ray exposure (Conference Paper)

Zhao, C. Z., Werner, M., Taylor, S., Chalker, P. R., Potter, R. J., & Gaskell, J. (2009). High-k dielectrics' radiation response to X-ray and γ-ray exposure. In 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits. IEEE. doi:10.1109/ipfa.2009.5232565

DOI: 10.1109/ipfa.2009.5232565

Chapter 8. Chemical Vapour Deposition of Metal Oxides for Microelectronics Applications (Chapter)

Jones, A. C., Aspinall, H. C., & Chalker, P. R. (2009). Chapter 8. Chemical Vapour Deposition of Metal Oxides for Microelectronics Applications. In L. M. Hitchman, & A. C. Jones (Eds.), Chemical Vapour Deposition: Precursors and Processes (pp. 357-412). London: Royal Society of Chemistry.

Customised layer deposition for chemical reactor applications (Conference Paper)

Singh, J., Hauser, C., Chalker, P. R., Sutcliffe, C. J., Clare, A. T., & Dunschen, M. (2009). Customised layer deposition for chemical reactor applications. In 20th Annual International Solid Freeform Fabrication Symposium, SFF 2009 (pp. 819-830).

Deposition of TiO2 Films by Liquid Injection ALD Using New Titanium 2,5-dimethylpyrrolyl Complexes (Journal article)

Davies, H. O., Jones, A. C., Black, K., Bacsa, J., Chalker, P. R., Marshall, P. A., . . . O'Brien, P. (2009). Deposition of TiO2 Films by Liquid Injection ALD Using New Titanium 2,5-dimethylpyrrolyl Complexes. EUROCVD 17 / CVD 17, 25(8), 813-819. doi:10.1149/1.3207671

DOI: 10.1149/1.3207671

Development of Quadrupole Mass Spectrometers Using Rapid Prototyping Technology (Journal article)

Brkic, B., France, N., Clare, A. T., Sutcliffe, C. J., Chalker, P. R., & Taylor, S. (2009). Development of Quadrupole Mass Spectrometers Using Rapid Prototyping Technology. JOURNAL OF THE AMERICAN SOCIETY FOR MASS SPECTROMETRY, 20(7), 1359-1365. doi:10.1016/j.jasms.2009.03.025

DOI: 10.1016/j.jasms.2009.03.025

Dielectric relaxation of lanthanum doped zirconium oxide (Journal article)

Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Murray, R. T., Gaskell, J. M., & Jones, A. C. (2009). Dielectric relaxation of lanthanum doped zirconium oxide. JOURNAL OF APPLIED PHYSICS, 105(4). doi:10.1063/1.3078038

DOI: 10.1063/1.3078038

Estimate of dielectric density using spectroscopic ellipsometry (Journal article)

Davey, W., Buiu, O., Werner, M., Mitrovic, I. Z., Hall, S., & Chalker, P. (2009). Estimate of dielectric density using spectroscopic ellipsometry. MICROELECTRONIC ENGINEERING, 86(7-9), 1905-1907. doi:10.1016/j.mee.2009.03.027

DOI: 10.1016/j.mee.2009.03.027

GaN, AlGaN, HfO2 based radial heterostructure nanowires (Journal article)

Lari, L., Walther, T., Black, K., Murray, R. T., Bullough, T. J., Chalker, P. R., . . . Riechert, H. (2010). GaN, AlGaN, HfO2 based radial heterostructure nanowires. 16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS, 209. doi:10.1088/1742-6596/209/1/012011

DOI: 10.1088/1742-6596/209/1/012011

High permittivity SrHf0.5Ti0.5O3 films grown by pulsed laser deposition (Journal article)

Yan, L., Suchomel, M. R., Grygiel, C., Niu, H. J., McMitchell, S. R. C., Bacsa, J., . . . Rosseinsky, M. J. (2009). High permittivity SrHf0.5Ti0.5O3 films grown by pulsed laser deposition. APPLIED PHYSICS LETTERS, 94(23). doi:10.1063/1.3151815

DOI: 10.1063/1.3151815

MOCVD and ALD of CeO2 Thin Films using a Novel Monomeric CeIV Alkoxide Precursor (Journal article)

Wrench, J. S., Black, K., Aspinall, H. C., Jones, A. C., Bacsa, J., Chalker, P. R., . . . Heys, P. N. (2009). MOCVD and ALD of CeO2 Thin Films using a Novel Monomeric CeIV Alkoxide Precursor. Chemical Vapour Deposition, 15, 1-3.

Permittivity enhancement and dielectric relaxation of doped hafnium and zirconium oxide (Journal article)

Werner, M., Zhao, C. Z., Taylor, S., Chalker, P. R., Black, K., & Gaskell, J. (2009). Permittivity enhancement and dielectric relaxation of doped hafnium and zirconium oxide. 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits. doi:10.1109/ipfa.2009.5232568

DOI: 10.1109/ipfa.2009.5232568

Rapid prototyping methodologies for ceramic micro components (Conference Paper)

Chalker, P. R., Berggreen, K. M., Clare, A. T., Singh, J., & Sutcliffe, C. J. (2009). Rapid prototyping methodologies for ceramic micro components. In SMART MATERIALS FOR SMART DEVICES AND STRUCTURES Vol. 154 (pp. 1-7). doi:10.4028/www.scientific.net/SSP.154.1

DOI: 10.4028/www.scientific.net/SSP.154.1

Structural properties of wurtzitelike ScGaN films grown by NH3-molecular beam epitaxy (Journal article)

Moram, M. A., Zhang, Y., Joyce, T. B., Holec, D., Chalker, P. R., Mayrhofer, P. H., . . . Humphreys, C. J. (2009). Structural properties of wurtzitelike ScGaN films grown by NH3-molecular beam epitaxy. JOURNAL OF APPLIED PHYSICS, 106(11). doi:10.1063/1.3268466

DOI: 10.1063/1.3268466

2008

Annealing of neodymium aluminate high-κ dielectric deposited by liquid injection MOCVD using single source heterometallic alkoxide precursor (Conference Paper)

Taechakumput, P., Ce, Z. Z., Taylor, S., Werner, M., Pham, N., Chalker, P. R., . . . Jones, A. C. (2008). Annealing of neodymium aluminate high-κ dielectric deposited by liquid injection MOCVD using single source heterometallic alkoxide precursor. In Proceedings - Electrochemical Society Vol. PV 2008-1 (pp. 322-326).

High-k materials and their response to X-ray radiation (Conference Paper)

Zhao, C. Z., Taylor, S., Taechakumput, P., Werner, M., Chalker, P. R., Huang, X. L., . . . Jones, A. C. (2008). High-k materials and their response to X-ray radiation. In Proceedings - Electrochemical Society Vol. PV 2008-1 (pp. 27-32).

Origin of frequency dispersion in high-k dielectrics (Conference Paper)

Taechakumput, P., Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Gaskell, J. M., . . . Drobnis, M. (2008). Origin of frequency dispersion in high-k dielectrics. In Proceedings - Electrochemical Society Vol. PV 2008-1 (pp. 20-26).

Nanoscale EELS and EDX Analyses of GaN Nanowires and GaN/AlGaN Radial Heterostructure Nanowires (Journal article)

Lari, L., Murray, R. T., Gass, M. H., Bullough, T., Chalker, P. R., Chèze, C., . . . Riechert, H. (2008). Nanoscale EELS and EDX Analyses of GaN Nanowires and GaN/AlGaN Radial Heterostructure Nanowires. Microscopy and Microanalysis, 14(S2), 1394-1395. doi:10.1017/s1431927608082809

DOI: 10.1017/s1431927608082809

Selective laser sintering of barium titanate-polymer composite films (Journal article)

Clare, A. T., Chalker, P. R., Davies, S., Sutcliffe, C. J., & Tsopanos, S. (2008). Selective laser sintering of barium titanate-polymer composite films. JOURNAL OF MATERIALS SCIENCE, 43(9), 3197-3202. doi:10.1007/s10853-007-2396-x

DOI: 10.1007/s10853-007-2396-x

MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si (Journal article)

Black, K., Jones, A. C., Chalker, P. R., Gaskell, J. M., Murray, R. T., Joyce, T. B., & Rushworth, S. A. (2008). MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si. JOURNAL OF CRYSTAL GROWTH, 310(5), 1010-1014. doi:10.1016/j.jcrysgro.2007.11.131

DOI: 10.1016/j.jcrysgro.2007.11.131

'Annealing Effect on Neodymium Aluminates high-k dielectric deposited by Liquid Injection MOCVD using single source Heterometallic Alkoxide precursors' (Conference Paper)

Taechakumput, P., Zhao, C. Z., Taylor, S., Werner, M., Pham, N., Chalker, P. R., . . . Jones, A. C. (2008). 'Annealing Effect on Neodymium Aluminates high-k dielectric deposited by Liquid Injection MOCVD using single source Heterometallic Alkoxide precursors'. In ISTC2008 (pp. 324-326). Shanghai: ECS.

'Effects of annealing ambient on dielectric relaxation of La doped ZrO2' (Conference Paper)

Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Gaskell, J. M., & Jones, A. C. (2008). 'Effects of annealing ambient on dielectric relaxation of La doped ZrO2'. In WODIM 2008 (pp. 235-236). Berlin: AVS.

'Frequency Dispersion and Dielectric Relaxation of La0.5Hf0.5O2' (Conference Paper)

Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Gaskell, J. M., & Jones, A. C. (2008). 'Frequency Dispersion and Dielectric Relaxation of La0.5Hf0.5O2'. In WODIM 2008 (pp. 237-238). Berlin: AVS.

'High-k Materials and Their Response to Gamma Ray Radiation', (Conference Paper)

Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Potter, R. J., Gaskell, J. M., & Jones, A. C. (2008). 'High-k Materials and Their Response to Gamma Ray Radiation',. In WODIM 2008, (pp. 5-6). Berlin,: AVS.

Aberration corrected STEM of defects in epitaxial n=4 Ruddlesden-Popper phase Can+1MnnO3n+1 (Journal article)

Wang, P., Bleloch, A. L., Yan, L., Niu, H. J., Chalker, P. R., Rosseinsky, M. J., & Goodhew, P. J. (2008). Aberration corrected STEM of defects in epitaxial n=4 Ruddlesden-Popper phase Can+1MnnO3n+1. EMAG: ELECTRON MICROSCOPY AND ANALYSIS GROUP CONFERENCE 2007, 126. doi:10.1088/1742-6596/126/1/012050

DOI: 10.1088/1742-6596/126/1/012050

Defect characterization and analysis of III-V nanowires grown by Ni-promoted MBE (Journal article)

Lari, L., Murray, R. T., Gass, M. H., Bullough, T. J., Chalker, P. R., Kioseoglou, J., . . . Riechert, H. (2008). Defect characterization and analysis of III-V nanowires grown by Ni-promoted MBE. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 205(11), 2589-2592. doi:10.1002/pssa.200780132

DOI: 10.1002/pssa.200780132

Deposition of ZrO2 and HfO2 thin films by liquid injection MOCVD and ALD using ansa-metallocene zirconium and hafnium precursors (Journal article)

Black, K., Aspinall, H. C., Jones, A. C., Przybylak, K., Bacsa, J., Chalker, P. R., . . . Heys, P. N. (2008). Deposition of ZrO2 and HfO2 thin films by liquid injection MOCVD and ALD using ansa-metallocene zirconium and hafnium precursors. JOURNAL OF MATERIALS CHEMISTRY, 18(38), 4561-4571. doi:10.1039/b807205a

DOI: 10.1039/b807205a

Electron Microscopy Analysis of AlGaN/GaN Nanowires Grown by Catalyst-Assisted Molecular Beam Epitaxy (Journal article)

Lari, L., Murray, R. T., Gass, M., Bullough, T. J., Chalker, P. R., Cheze, C., . . . Riechert, H. (2008). Electron Microscopy Analysis of AlGaN/GaN Nanowires Grown by Catalyst-Assisted Molecular Beam Epitaxy. MICROSCOPY OF SEMICONDUCTING MATERIALS 2007, 120, 221-+. Retrieved from http://gateway.webofknowledge.com/

Nanoscale compositional analysis of Ni-based seed crystallites associated with GaN nanowire growth (Journal article)

Lari, L., Murray, R. T., Bullough, T. J., Chalker, P. R., Gass, M., Cheze, C., . . . Riechert, H. (2008). Nanoscale compositional analysis of Ni-based seed crystallites associated with GaN nanowire growth. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 40(7), 2457-2461. doi:10.1016/j.physe.2007.10.003

DOI: 10.1016/j.physe.2007.10.003

Permittivity enhancement of hafnium dioxide high-kappa films by cerium doping (Journal article)

Chalker, P. R., Werner, M., Romani, S., Potter, R. J., Black, K., Aspinall, H. C., . . . Heys, P. N. (2008). Permittivity enhancement of hafnium dioxide high-kappa films by cerium doping. APPLIED PHYSICS LETTERS, 93(18). doi:10.1063/1.3023059

DOI: 10.1063/1.3023059

Selective laser melting of high aspect ratio 3D nickel–titanium structures two way trained for MEMS applications (Journal article)

Clare, A. T., Chalker, P. R., Davies, S., Sutcliffe, C. J., & Tsopanos, S. (2008). Selective laser melting of high aspect ratio 3D nickel–titanium structures two way trained for MEMS applications. International Journal of Mechanics and Materials in Design, 4(2), 181-187. doi:10.1007/s10999-007-9032-4

DOI: 10.1007/s10999-007-9032-4

2007

Deposition of Lanthanum Zirconium Oxide High-k Films by Liquid Injection ALD and MOCVD (Journal article)

Gaskell, J. M., Jones, A. C., Chalker, P. R., Werner, M., Aspinall, H. C., Taylor, S., . . . Heys, P. N. (2007). Deposition of Lanthanum Zirconium Oxide High-k Films by Liquid Injection ALD and MOCVD. CHEMICAL VAPOR DEPOSITION, 13(12), 684-690. doi:10.1002/cvde.200706637

DOI: 10.1002/cvde.200706637

Growth of HfO2 by Liquid Injection MOCVD and ALD Using New Hafnium-Cyclopentadienyl Precursors (Journal article)

O'Kane, R., Gaskell, J., Jones, A. C., Chalker, P. R., Black, K., Werner, M., . . . Odedra, R. (2007). Growth of HfO2 by Liquid Injection MOCVD and ALD Using New Hafnium-Cyclopentadienyl Precursors. Chemical Vapor Deposition, 13(11), 609-617. doi:10.1002/cvde.200706589

DOI: 10.1002/cvde.200706589

Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer (Journal article)

Moram, M. A., Kappers, M. J., Joyce, T. B., Chalker, P. R., Barber, Z. H., & Humphreys, C. J. (2007). Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer. JOURNAL OF CRYSTAL GROWTH, 308(2), 302-308. doi:10.1016/j.jcrysgro.2007.09.009

DOI: 10.1016/j.jcrysgro.2007.09.009

'Optimization of low temperature ALD gadolinium oxide films for gate dielectric stack applications' (Conference Paper)

Buiu, O., Werner, M., Davey, W. M., Lu, Y., Hall, S., & Chalker, P. (2007). 'Optimization of low temperature ALD gadolinium oxide films for gate dielectric stack applications'. In International Conference on Spectroellipsometry (pp. xx). Marseilles: xx.

Charge trapping and interface states in hydrogen annealed HfO2-Si structures (Journal article)

Gomeniuk, Y. V., Nazarov, A. N., Vovk, Y. N., Lysenko, V. S., Lu, Y., Buiu, O., . . . Chalker, P. (2007). Charge trapping and interface states in hydrogen annealed HfO2-Si structures. MICROELECTRONICS RELIABILITY, 47(4-5), 714-717. doi:10.1016/j.microrel.2007.01.025

DOI: 10.1016/j.microrel.2007.01.025

Charge trapping characterization of MOCVD HfO2/p-Si interfaces at cryogenic temperatures (Journal article)

Tyagulskyy, I. P., Osiyuk, I. N., Lysenko, V. S., Nazarov, A. N., Hall, S., Buiu, O., . . . Chalker, P. (2007). Charge trapping characterization of MOCVD HfO2/p-Si interfaces at cryogenic temperatures. MICROELECTRONICS RELIABILITY, 47(4-5), 726-728. doi:10.1016/j.microrel.2007.01.074

DOI: 10.1016/j.microrel.2007.01.074

Deposition of Pr- and Nd-aluminate by liquid injection MOCVD and ALD using single-source heterometallic alkoxide precursors (Journal article)

Gaskell, J. M., Przybylak, S., Jones, A. C., Aspinall, H. C., Chalker, P. R., Black, K., . . . Taylor, S. (2007). Deposition of Pr- and Nd-aluminate by liquid injection MOCVD and ALD using single-source heterometallic alkoxide precursors. CHEMISTRY OF MATERIALS, 19(19), 4796-4803. doi:10.1021/cm0707556

DOI: 10.1021/cm0707556

Deposition of lanthanum zirconium oxide high-kappa films by liquid injection atomic layer deposition (Journal article)

Gaskell, J. M., Jones, A. C., Aspinall, H. C., Taylor, S., Taechakumput, P., Chalker, P. R., . . . Odedra, R. (2007). Deposition of lanthanum zirconium oxide high-kappa films by liquid injection atomic layer deposition. Applied Physics Letters, 91(11), 112912.

Deposition of lanthanum zirconium oxide high-kappa films by liquid injection atomic layer deposition (Journal article)

Gaskell, J. M., Jones, A. C., Aspinall, H. C., Taylor, S., Taechakumput, P., Chalker, P. R., . . . Odedra, R. (2007). Deposition of lanthanum zirconium oxide high-kappa films by liquid injection atomic layer deposition. APPLIED PHYSICS LETTERS, 91(11). doi:10.1063/1.2784956

DOI: 10.1063/1.2784956

Growth of HfO2 by liquid injection MOCVD and ALD using new hafnium-cyclopentadienyl precursors (Journal article)

O'Kane, R., Gaskell, J., Jones, A. C., Chalker, P. R., Black, K., Werner, M., . . . Odedra, R. (2007). Growth of HfO2 by liquid injection MOCVD and ALD using new hafnium-cyclopentadienyl precursors. CHEMICAL VAPOR DEPOSITION, 13(11), 609-617. doi:10.1002/cvde.200706589

DOI: 10.1002/cvde.200706589

Investigation of optical and electronic properties of hafnium aluminate films deposited by Metal-Organic Chemical Vapour Deposition (Journal article)

Buiu, O., Lu, Y., Hall, S., Mitrovic, I. Z., Potter, R. J., & Chalker, P. R. (2007). Investigation of optical and electronic properties of hafnium aluminate films deposited by Metal-Organic Chemical Vapour Deposition. THIN SOLID FILMS, 515(7-8), 3772-3778. doi:10.1016/j.tsf.2006.09.035

DOI: 10.1016/j.tsf.2006.09.035

Liquid injection MOCVD and ALD of ZrO2 using zr-cyclopentadienyl precursors (Journal article)

Gaskell, J. M., Jones, A. C., Black, K., Chalker, P. R., Leese, T., Kingsley, A., . . . Heys, P. N. (2007). Liquid injection MOCVD and ALD of ZrO2 using zr-cyclopentadienyl precursors. SURFACE & COATINGS TECHNOLOGY, 201(22-23), 9095-9098. doi:10.1016/j.surfcoat.2007.04.098

DOI: 10.1016/j.surfcoat.2007.04.098

Molecular design of improved precursors for the MOCVD of oxides used in microelectronics (Journal article)

Jones, A. C., Aspinall, H. C., & Chalker, P. R. (2007). Molecular design of improved precursors for the MOCVD of oxides used in microelectronics. SURFACE & COATINGS TECHNOLOGY, 201(22-23), 9046-9054. doi:10.1016/j.surfcoat.2007.04.118

DOI: 10.1016/j.surfcoat.2007.04.118

Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition (Journal article)

Taechakumput, P., Taylor, S., Buiu, O., Potter, R. J., Chalker, P. R., & Jones, A. C. (2007). Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition. MICROELECTRONICS RELIABILITY, 47(4-5), 825-829. doi:10.1016/j.microrel.2007.01.049

DOI: 10.1016/j.microrel.2007.01.049

Photochemistry of refractive index structures in poly(methyl methacrylate) by femtosecond laser irradiation (Journal article)

Baum, A., Scully, P. J., Basanta, M., Thomas, C. L. P., Fielden, P. R., Goddard, N. J., . . . Chalker, P. R. (2007). Photochemistry of refractive index structures in poly(methyl methacrylate) by femtosecond laser irradiation. OPTICS LETTERS, 32(2), 190-192. doi:10.1364/OL.32.000190

DOI: 10.1364/OL.32.000190

Precursors for MOCVD and ALD of rare earth oxides-complexes of the early lanthanides with a donor-functionalized alkoxide ligand (Journal article)

Aspinall, H. C., Bickley, J. F., Gaskell, J. M., Jones, A. C., Labat, G., Chalker, P. R., & Williams, P. A. (2007). Precursors for MOCVD and ALD of rare earth oxides-complexes of the early lanthanides with a donor-functionalized alkoxide ligand. INORGANIC CHEMISTRY, 46(15), 5852-5860. doi:10.1021/ic061382y

DOI: 10.1021/ic061382y

Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition (Journal article)

Lu, Y., Buiu, O., Hall, S., Mitrovic, I. Z., Davey, W., Potter, R. J., & Chalker, P. R. (2007). Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition. MICROELECTRONICS RELIABILITY, 47(4-5), 722-725. doi:10.1016/j.microrel.2007.01.052

DOI: 10.1016/j.microrel.2007.01.052

Unit-cell-level assembly of metastable transition-metal oxides by pulsed-laser deposition (Journal article)

Yan, L., Niu, H., Bridges, C. A., Marshall, P. A., Hadermann, J., van Tendeloo, G., . . . Rosseinsky, M. J. (2007). Unit-cell-level assembly of metastable transition-metal oxides by pulsed-laser deposition. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 46(24), 4539-4542. doi:10.1002/anie.200700119

DOI: 10.1002/anie.200700119

2006

Selective Laser Melting (Patent)

Sutcliffe, C., Fox, P., & Chalker, P. (2006). Selective Laser Melting.

Materials Research Society Symposium Proceedings: Preface (Conference Paper)

Bull, S. J., Chalker, P. R., Chen, S. C., Meng, W. J., & Maboudian, R. (2006). Materials Research Society Symposium Proceedings: Preface. In Materials Research Society Symposium Proceedings Vol. 890.

Structural and electrical characterization of amorphous lanthanum hafnium oxide thin films (Journal article)

Loo, Y. F., Taylor, S., Murray, R. T., Jones, A. C., & Chalker, P. R. (2006). Structural and electrical characterization of amorphous lanthanum hafnium oxide thin films. JOURNAL OF APPLIED PHYSICS, 99(10). doi:10.1063/1.2198936

DOI: 10.1063/1.2198936

'Charge Trapping Characterization of the HfO2/p-Si Interfaces at Cryogenic Temperatures' (Conference Paper)

Tyagulskyy, I. P., Osiyuk, I. N., Lysenko, V. S., Nazarov, A. N., Hall, S., Buiu, O., . . . Lashkaryov, V. E. (2006). 'Charge Trapping Characterization of the HfO2/p-Si Interfaces at Cryogenic Temperatures'. In S. Lombardo (Ed.), 14th Workshop on Dielectric in Microelectronics (pp. 174-175). Santa Tecla - Catania: CNR - Italy.

'Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition' (Conference Paper)

Lu, Y., Buiu, O., Mitrovic, I. Z., Hall, S., Potter, R. J., & Chalker, P. (2006). 'Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition'. In 14th Workshop on Dielectric in Microelectronics (pp. 188-189). Santa Tecla - Catania: CNR - Italy.

Liquid injection ALD and MOCVD of lanthanum aluminate using a bimetallic alkoxide precursor (Journal article)

Gaskell, J. M., Jones, A. C., Aspinall, H. C., Przybylak, S., Chalker, P. R., Black, K., . . . Critchlow, G. W. (2006). Liquid injection ALD and MOCVD of lanthanum aluminate using a bimetallic alkoxide precursor. JOURNAL OF MATERIALS CHEMISTRY, 16(39), 3854-3860. doi:10.1039/b609129f

DOI: 10.1039/b609129f

MOCVD and ALD of high-kappa dielectric oxides using alkoxide precursors (Journal article)

Jones, A. C., Aspinall, H. C., Chalker, P. R., Potter, R. J., Manning, T. D., Loo, Y. F., . . . Smith, L. M. (2006). MOCVD and ALD of high-kappa dielectric oxides using alkoxide precursors. CHEMICAL VAPOR DEPOSITION, 12(2-3), 83-98. doi:10.1002/cvde.200500023

DOI: 10.1002/cvde.200500023

Mapping the effective mass of electrons in III-V semiconductor quantum confined structures (Journal article)

Gass, M. H., Papworth, A. J., Beanland, R., Bullough, T. J., & Chalker, P. R. (2006). Mapping the effective mass of electrons in III-V semiconductor quantum confined structures. PHYSICAL REVIEW B, 73(3). doi:10.1103/PhysRevB.73.035312

DOI: 10.1103/PhysRevB.73.035312

Microstructure and strain-free lattice parameters of ScxGa1-xN films (Conference Paper)

Moram, M. A., Joyce, T. B., Chalker, P. R., Barber, Z. H., & Humphreys, C. J. (2006). Microstructure and strain-free lattice parameters of ScxGa1-xN films. In GaN, AIN, InN and Related Materials Vol. 892 (pp. 723-727). Retrieved from http://gateway.webofknowledge.com/

Microstructure of epitaxial scandium nitride films grown on silicon (Journal article)

Moram, M. A., Joyce, T. B., Chalker, P. R., Barber, Z. H., & Humphreys, C. J. (2006). Microstructure of epitaxial scandium nitride films grown on silicon. APPLIED SURFACE SCIENCE, 252(24), 8385-8387. doi:10.1016/j.apsusc.2005.11.069

DOI: 10.1016/j.apsusc.2005.11.069

Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition (LI - ALD) (Conference Paper)

Taechakumput, P., Taylor, S., Buiu, O., Ram, D. L., Potter, R. J., Chalker, P. R., & Jones, A. C. (2006). Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition (LI - ALD). In S. Lombardo (Ed.), 14th Workshop on Dielectric in Microelectronics (pp. 176-177). Santa Tecla - Catania: CNR - Italy.

Refractive index structures in poly(methyl methacrylate) and polymer optical fibre by femtosecond laser irradiation (Conference Paper)

Baum, A., Perrie, W., Scully, P. J., Basanta, M., Thomas, C. L. P., Goddard, N. J., . . . Chalker, P. R. (2006). Refractive index structures in poly(methyl methacrylate) and polymer optical fibre by femtosecond laser irradiation. In Optics InfoBase Conference Papers.

Selective laser melting of high aspect ratio 3D nickel-titanium structures for MEMS applications. (Journal article)

Chalker, P. R., Clare, A., Davies, S., Sutcliffe, C. J., & Tsopanos, S. (2006). Selective laser melting of high aspect ratio 3D nickel-titanium structures for MEMS applications.. SURFACE ENGINEERING FOR MANUFACTURING APPLICATIONS, 890, 93-+. Retrieved from http://gateway.webofknowledge.com/

Spectroellipsometric assessment of HfO2 thin films (Journal article)

Buiu, O., Lu, Y., Mitrovic, I. Z., Hall, S., Chalker, P., & Potter, R. J. (2006). Spectroellipsometric assessment of HfO2 thin films. THIN SOLID FILMS, 515(2), 623-626. doi:10.1016/j.tsf.2005.12.215

DOI: 10.1016/j.tsf.2005.12.215

Structural and electrical characterization of amorphous lanthanum hafnium oxide thin films (Journal article)

Loo, Y. F., Taylor, S., Murray, R. T., Jones, A. C., & Chalker, P. R. (2006). Structural and electrical characterization of amorphous lanthanum hafnium oxide thin films. Journal of Applied Physics, 99(103074), 103704.

Transition from electron accumulation to depletion at InGaN surfaces (Journal article)

Veal, T. D., Jefferson, P. H., Piper, L. F. J., McConville, C. F., Joyce, T. B., Chalker, P. R., . . . Schaff, W. J. (2006). Transition from electron accumulation to depletion at InGaN surfaces. APPLIED PHYSICS LETTERS, 89(20). doi:10.1063/1.2387976

DOI: 10.1063/1.2387976

Young's modulus, Poisson's ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon (Journal article)

Moram, M. A., Barber, Z. H., Humphreys, C. J., Joyce, T. B., & Chalker, P. R. (2006). Young's modulus, Poisson's ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon. JOURNAL OF APPLIED PHYSICS, 100(2). doi:10.1063/1.2217106

DOI: 10.1063/1.2217106

2005

Atomic vapour deposition (AVD) of SrBi2Ta2O9 using an all alkoxide precursor system (vol 272, pg 778, 2004) (Journal article)

Chalker, P. R., Potter, R. J., Roberts, J. L., Jones, A. C., Smith, L. M., & Schumacher, M. (2005). Atomic vapour deposition (AVD) of SrBi2Ta2O9 using an all alkoxide precursor system (vol 272, pg 778, 2004). JOURNAL OF CRYSTAL GROWTH, 276(1-2), 333. doi:10.1016/j.jcrysgro.2005.01.093

DOI: 10.1016/j.jcrysgro.2005.01.093

CCDC 255507: Experimental Crystal Structure Determination (Journal article)

Loo, Y. F., O Kane, R., Jones, A. C., Aspinall, H. C., Potter, R. J., Chalker, P. R., . . . Smith, L. M. (2005). CCDC 255507: Experimental Crystal Structure Determination. Cambridge Structural Database. doi:10.5517/cc8kw5v

DOI: 10.5517/cc8kw5v

CCDC 255508: Experimental Crystal Structure Determination (Journal article)

Loo, Y. F., O Kane, R., Jones, A. C., Aspinall, H. C., Potter, R. J., Chalker, P. R., . . . Smith, L. M. (2005). CCDC 255508: Experimental Crystal Structure Determination. Cambridge Structural Database. doi:10.5517/cc8kw6w

DOI: 10.5517/cc8kw6w

Deposition of HfO2 and ZrO2 films by liquid injection MOCVD using new monomeric alkoxide precursors (Journal article)

Loo, Y. F., O'Kane, R., Jones, A. C., Aspinall, H. C., Potter, R. J., Chalker, P. R., . . . Smith, L. M. (2005). Deposition of HfO2 and ZrO2 films by liquid injection MOCVD using new monomeric alkoxide precursors. JOURNAL OF MATERIALS CHEMISTRY, 15(19), 1896-1902. doi:10.1039/b417389a

DOI: 10.1039/b417389a

Deposition of HfO2 films by liquid injection MOCVD using a new monomeric alkoxide precursor, [Hf(dmop)(4)] (Journal article)

Loo, Y. F., O'Kane, R., Jones, A. C., Aspinall, H. C., Potter, R. J., Chalker, P. R., . . . Smith, L. M. (2005). Deposition of HfO2 films by liquid injection MOCVD using a new monomeric alkoxide precursor, [Hf(dmop)(4)]. CHEMICAL VAPOR DEPOSITION, 11(6-7), 299-305. doi:10.1002/cvde.200506384

DOI: 10.1002/cvde.200506384

Deposition of HfO2, Gd2O3 and PrOx by liquid injection ALD techniques (Journal article)

Potter, R. J., Chalker, P. R., Manning, T. D., Aspinall, H. C., Loo, Y. F., Jones, A. C., . . . Schumacher, M. (2005). Deposition of HfO2, Gd2O3 and PrOx by liquid injection ALD techniques. CHEMICAL VAPOR DEPOSITION, 11(3), 159-169. doi:10.1002/cvde.200406348

DOI: 10.1002/cvde.200406348

Deposition of LaAlO3 films by liquid injection MOCVD using a new [La-Al] single source alkoxide precursor (Journal article)

Manning, T. D., Loo, Y. F., Jones, A. C., Aspinall, H. C., Chalker, P. R., Bickley, J. F., . . . Critchlow, G. W. (2005). Deposition of LaAlO3 films by liquid injection MOCVD using a new [La-Al] single source alkoxide precursor. JOURNAL OF MATERIALS CHEMISTRY, 15(33), 3384-3387. doi:10.1039/b507004j

DOI: 10.1039/b507004j

Mapping of the effective electron mass in III-V semiconductors (Conference Paper)

Gass, M. H., Sanchez, A. M., Papworth, A. J., Bullough, T. J., Beanland, R., & Chalker, P. R. (2005). Mapping of the effective electron mass in III-V semiconductors. In Microscopy of Semiconducting Materials Vol. 107 (pp. 491-494). Retrieved from http://gateway.webofknowledge.com/

Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes (Journal article)

Lu, Y., Buiu, O., Mitrovic, I., Hall, S., Chalker, P. R., Potter, R., . . . Vovk, Y. (2006). Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes. ECS Transactions. doi:10.1149/1.2209301

DOI: 10.1149/1.2209301

Recent developments in the MOCVD and ALD of rare earth oxides and silicates (Journal article)

Jones, A. C., Aspinall, H. C., Chalker, P. R., Potter, R. J., Kukli, K., Rahtu, A., . . . Leskela, M. (2005). Recent developments in the MOCVD and ALD of rare earth oxides and silicates. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 118(1-3), 97-104. doi:10.1016/j.mseb.2004.12.081

DOI: 10.1016/j.mseb.2004.12.081

2004

Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/GaAs QWs: blue shift versus red shift (Conference Paper)

Balkan, N., Mazzucato, S., Erol, A., Hepburn, C. J., Potter, R. J., Boland-Thoms, A., . . . Bullough, T. J. (2004). Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/GaAs QWs: blue shift versus red shift. In IEE PROCEEDINGS-OPTOELECTRONICS Vol. 151 (pp. 284-289). doi:10.1049/ip-opt:20040935

DOI: 10.1049/ip-opt:20040935

High Spatial Resolution Mapping of the Effective Mass in GaInNAs (Journal article)

Gass, M. H., Sanchez, A. M., Papworth, A. J., Bullough, T. J., & Chalker, P. R. (2004). High Spatial Resolution Mapping of the Effective Mass in GaInNAs. Microscopy and Microanalysis, 10(S02), 828-829. doi:10.1017/s1431927604881078

DOI: 10.1017/s1431927604881078

Quantitative Elemental Mapping Using Valance-Band Transitions in Epsilon2, Using Electron Energy Loss Spectroscopy (Journal article)

Gass, M. H., Sanchez, A. M., Papworth, A. J., Bullough, T. J., & Chalker, P. R. (2004). Quantitative Elemental Mapping Using Valance-Band Transitions in Epsilon2, Using Electron Energy Loss Spectroscopy. Microscopy and Microanalysis, 10(S02), 866-867. doi:10.1017/s143192760488108x

DOI: 10.1017/s143192760488108x

Atomic vapour deposition (AVD) of SrBi2Ta2O9 using an all alkoxide precursor (Journal article)

Chalker, P. R., Potter, R. J., Roberts, J. L., Jones, A. C., Smith, L. M., & Schumacher, M. (2004). Atomic vapour deposition (AVD) of SrBi2Ta2O9 using an all alkoxide precursor. JOURNAL OF CRYSTAL GROWTH, 272(1-4), 778-784. doi:10.1016/j.jcrysgro.2004.08.109

DOI: 10.1016/j.jcrysgro.2004.08.109

Characterization of hafnium aluminate gate dielectrics deposited by liquid injection metalorganic chemical vapor deposition (Journal article)

Potter, R. J., Marshall, P. A., Chalker, P. R., Taylor, S., Jones, A. C., Noakes, T. C. Q., & Bailey, P. (2004). Characterization of hafnium aluminate gate dielectrics deposited by liquid injection metalorganic chemical vapor deposition. APPLIED PHYSICS LETTERS, 84(20), 4119-4121. doi:10.1063/1.1755424

DOI: 10.1063/1.1755424

Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells (Journal article)

Gass, M. H., Bullough, T. J., Papworth, A., Thomas, S., Joyce, T. B., Chalker, P. R., . . . Balkan, N. (2003). Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells. MICROSCOPY OF SEMICONDUCTING MATERIALS 2003, (180), 225-228. Retrieved from http://gateway.webofknowledge.com/

Deposition of hafnium silicate films by liquid injection MOCVD using a single source or dual source approach (Journal article)

Roberts, J. L., Marshall, P. A., Jones, A. C., Chalker, P. R., Bickley, J. F., Williams, P. A., . . . Lindner, J. (2004). Deposition of hafnium silicate films by liquid injection MOCVD using a single source or dual source approach. JOURNAL OF MATERIALS CHEMISTRY, 14(3), 391-395. doi:10.1039/b305665c

DOI: 10.1039/b305665c

Elemental mapping using the Ga 3d and In 4d transitions in the epsilon(2) absorption spectra derived from EELS (Journal article)

Gass, M. H., Papworth, A. J., Bullough, T. J., & Chalker, P. R. (2004). Elemental mapping using the Ga 3d and In 4d transitions in the epsilon(2) absorption spectra derived from EELS. ULTRAMICROSCOPY, 101(2-4), 257-264. doi:10.1016/j.ultramic.2004.06.007

DOI: 10.1016/j.ultramic.2004.06.007

Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices (Journal article)

Davies, S., Huang, T. S., Gass, M. H., Papworth, A. J., Joyce, T. B., & Chalker, P. R. (2004). Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices. APPLIED PHYSICS LETTERS, 84(14), 2566-2568. doi:10.1063/1.1695196

DOI: 10.1063/1.1695196

Fabrication of epitaxial III-nitride cantilevers on silicon (111) substrates (Journal article)

Davies, S., Huang, T. S., Murray, R. T., Gass, M. H., Papworth, A. J., Joyce, T. B., & Chalker, P. R. (2004). Fabrication of epitaxial III-nitride cantilevers on silicon (111) substrates. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 15(11), 705-710. doi:10.1023/B:JMSE.0000043416.67986.10

DOI: 10.1023/B:JMSE.0000043416.67986.10

Growth of gadolinium oxide thin films by liquid injection MOCVD using a new gadolinium alkoxide precursor (Journal article)

Aspinall, H. C., Gaskell, J. M., Loo, Y. F., Jones, A. C., Chalker, P. R., Potter, R. J., . . . Critchlow, G. W. (2004). Growth of gadolinium oxide thin films by liquid injection MOCVD using a new gadolinium alkoxide precursor. CHEMICAL VAPOR DEPOSITION, 10(6), 301-305. doi:10.1002/cvde.200306310

DOI: 10.1002/cvde.200306310

Growth of hafnium aluminate thin films by liquid injection MOCVD using alkoxide precursors (Journal article)

Marshall, P. A., Potter, R. J., Jones, A. C., Chalker, P. R., Taylor, S., Critchlow, G. W., & Rushworth, S. A. (2004). Growth of hafnium aluminate thin films by liquid injection MOCVD using alkoxide precursors. CHEMICAL VAPOR DEPOSITION, 10(5), 275-279. doi:10.1002/cvde.200306301

DOI: 10.1002/cvde.200306301

Growth of lanthanum oxide thin films by liquid injection MOCVD using a novel lanthanum alkoxide precursor (Journal article)

Aspinall, H. C., Gaskell, J., Williams, P. A., Jones, A. C., Chalker, P. R., Marshall, P. A., . . . Critchlow, G. W. (2004). Growth of lanthanum oxide thin films by liquid injection MOCVD using a novel lanthanum alkoxide precursor. CHEMICAL VAPOR DEPOSITION, 10(1), 13-+. doi:10.1002/cvde.200304164

DOI: 10.1002/cvde.200304164

Growth of neodymium oxide thin films by liquid-injection MOCVD using a new neodymium alkoxide precursor (Journal article)

Loo, Y. F., Potter, R. L., Jones, A. C., Aspinall, H. C., Gaskell, J. M., Chalker, P. R., . . . Critchlow, G. W. (2004). Growth of neodymium oxide thin films by liquid-injection MOCVD using a new neodymium alkoxide precursor. CHEMICAL VAPOR DEPOSITION, 10(6), 306-310. doi:10.1002/cvde.200406313

DOI: 10.1002/cvde.200406313

Growth of praseodymium oxide and praseodymium silicate thin films by liquid injection MOCVD (Journal article)

Aspinall, H. C., Gaskell, J., Williams, P. A., Jones, A. C., Chalker, P. R., Marshall, P. A., . . . Critchlow, G. W. (2004). Growth of praseodymium oxide and praseodymium silicate thin films by liquid injection MOCVD. CHEMICAL VAPOR DEPOSITION, 10(2), 83-89. doi:10.1002/cvde.200306282

DOI: 10.1002/cvde.200306282

Liquid injection MOCVD and ALD studies of "single source" Sr-Nb and Sr-Ta precursors (Conference Paper)

Potter, R. J., Marshall, P. A., Roberts, J. L., Jones, A. C., Chalker, P. R., Vehkamaki, M., . . . Smith, L. M. (2004). Liquid injection MOCVD and ALD studies of "single source" Sr-Nb and Sr-Ta precursors. In FERROELECTRIC THIN FILMS XII Vol. 784 (pp. 97-108). Retrieved from http://gateway.webofknowledge.com/

Liquid injection MOCVD of rare-earth oxides using new alkoxide precursors (Conference Paper)

Williams, P. A., Jones, A. C., Aspinall, H. C., Gaskell, J. M., Chalker, P. R., Marshall, P. A., . . . Smith, L. M. (2004). Liquid injection MOCVD of rare-earth oxides using new alkoxide precursors. In FERROELECTRIC THIN FILMS XII Vol. 784 (pp. 461-466). Retrieved from http://gateway.webofknowledge.com/

Liquid injection MOCVD of rare-earth oxides using new alkoxide precursors (Conference Paper)

Williams, P. A., Jones, A. C., Aspinall, H. C., Gaskell, J. M., Chalker, P. R., Marshall, P. A., . . . Smith, L. M. (2004). Liquid injection MOCVD of rare-earth oxides using new alkoxide precursors. In FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES Vol. 786 (pp. 233-238). Retrieved from http://gateway.webofknowledge.com/

Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy (Journal article)

Gass, M. H., Papworth, A. J., Joyce, T. B., Bullough, T. J., & Chalker, P. R. (2004). Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy. APPLIED PHYSICS LETTERS, 84(9), 1453-1455. doi:10.1063/1.1650906

DOI: 10.1063/1.1650906

Some recent developments in the MOCVD and ALD of high-kappa dielectric oxides (Journal article)

Jones, A. C., Aspinall, H. C., Chalker, P. R., Potter, R. J., Kukli, K., Rahtu, A., . . . Leskela, M. (2004). Some recent developments in the MOCVD and ALD of high-kappa dielectric oxides. JOURNAL OF MATERIALS CHEMISTRY, 14(21), 3101-3112. doi:10.1039/b405525j

DOI: 10.1039/b405525j

Some recent developments in the metalorganic chemical vapour deposition of high-kappa dielectric oxides (Conference Paper)

Chalker, P. R., & Jones, A. C. (2004). Some recent developments in the metalorganic chemical vapour deposition of high-kappa dielectric oxides. In PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS II Vol. 2003 (pp. 73-87). Retrieved from http://gateway.webofknowledge.com/

Synthesis and characterisation of four new heterometal alkoxides: potential precursors for the MOCVD of ferroelectric oxides (Journal article)

Jones, A. C., Tobin, N. L., Marshall, P. A., Potter, R. J., Chalker, P. R., Bickley, J. F., . . . Critchlow, G. W. (2004). Synthesis and characterisation of four new heterometal alkoxides: potential precursors for the MOCVD of ferroelectric oxides. JOURNAL OF MATERIALS CHEMISTRY, 14(5), 887-894. doi:10.1039/b312697h

DOI: 10.1039/b312697h

The microstructural influence of nitrogen incorporation in dilute nitride semiconductors (Journal article)

Chalker, P. R., Bullough, T. J., Gass, M., Thomas, S., & Joyce, T. B. (2004). The microstructural influence of nitrogen incorporation in dilute nitride semiconductors. JOURNAL OF PHYSICS-CONDENSED MATTER, 16(31), S3161-S3170. doi:10.1088/0953-8984/16/31/012

DOI: 10.1088/0953-8984/16/31/012

Thermal stability of hafnium silicate dielectric films deposited by a dual source liquid injection MOCVD (Journal article)

Chalker, P. R., Marshall, P. A., Potter, R. J., Joyce, T. B., Jones, A. C., Taylor, S., . . . Bailey, P. (2004). Thermal stability of hafnium silicate dielectric films deposited by a dual source liquid injection MOCVD. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 15(11), 711-714. doi:10.1023/B:JMSE.0000043417.59029.d6

DOI: 10.1023/B:JMSE.0000043417.59029.d6

2003

Growth of Hafnium Dioxide Thin Films by Liquid-Injection MOCVD Using Alkylamide and Hydroxylamide Precursors (Journal article)

Williams, P. A., Jones, A. C., Tobin, N. L., Chalker, P. R., Taylor, S., Marshall, P. A., . . . Critchlow, G. W. (2003). Growth of Hafnium Dioxide Thin Films by Liquid-Injection MOCVD Using Alkylamide and Hydroxylamide Precursors. Advanced Materials, 15(24), 309-314.

Growth of hafnium dioxide thin films by liquid-injection MOCVD using alkylamide and hydroxylamide precursors (Journal article)

Williams, P. A., Jones, A. C., Tobin, N. L., Chalker, P. R., Taylor, S., Marshall, P. A., . . . Critchlow, G. W. (2003). Growth of hafnium dioxide thin films by liquid-injection MOCVD using alkylamide and hydroxylamide precursors. CHEMICAL VAPOR DEPOSITION, 9(6), 309-314. doi:10.1002/cvde.200306271

DOI: 10.1002/cvde.200306271

Growth of Praseodymium Oxide Thin Films by Liquid Injection MOCVD using a Novel Praseodymium Alkoxide Precursor (Journal article)

Aspinall, H. C., Gaskell, J., Williams, P. A., Jones, A. C., Chalker, P. R., Marshall, P. A., . . . Critchlow, G. W. (2003). Growth of Praseodymium Oxide Thin Films by Liquid Injection MOCVD using a Novel Praseodymium Alkoxide Precursor. Advanced Materials, 15(20), 235-238.

LiBC electronic, vibrational, structural, and low-temperature chemical behavior of a layered material isoelectronic with MgB2 (Journal article)

Fogg, A. M., Chalker, P. R., Claridge, J. B., Darling, G. R., & Rosseinsky, M. J. (2003). LiBC electronic, vibrational, structural, and low-temperature chemical behavior of a layered material isoelectronic with MgB2. Physical Review B - Condensed Matter and Materials Physics, 67(24). doi:10.1103/PhysRevB.67.245106

DOI: 10.1103/PhysRevB.67.245106

Physical properties of diamond for thermistors and pressure transducers (Journal article)

Chalker, P. R., Johnston, C., & Werner, M. (2003). Physical properties of diamond for thermistors and pressure transducers. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 18(3), S113-S116. doi:10.1088/0268-1242/18/3/316

DOI: 10.1088/0268-1242/18/3/316

Growth of lanthanum silicate thin films by liquid injection MOCVD using tris[bis(trimethyisilyl)amido]lanthanum (Journal article)

Aspinall, H. C., Williams, P. A., Gaskell, J., Jones, A. C., Roberts, J. L., Smith, L. M., . . . Critchlow, G. W. (2003). Growth of lanthanum silicate thin films by liquid injection MOCVD using tris[bis(trimethyisilyl)amido]lanthanum. Advanced Materials, 15(1), 7-10.

Deposition of high-k dielectric oxide films by liquid injection MOCVD (Journal article)

Jones, A. C., Williams, P. A., Chalker, P. R., Taylor, S., Zoolfakr, A., Smith, L. M., & McGraw, P. (2003). Deposition of high-k dielectric oxide films by liquid injection MOCVD. INTEGRATED FERROELECTRICS, 57, 1271-1277. doi:10.1080/714040784

DOI: 10.1080/714040784

Development of improved precursors for the MOCVD of bismuth titanate (Conference Paper)

Williams, P. A., Jones, A. C., Tobin, N. L., Marshall, P. A., Chalker, P. R., Davies, H. O., & Smith, L. M. (2003). Development of improved precursors for the MOCVD of bismuth titanate. In FERROELECTRIC THIN FILMS XI Vol. 748 (pp. 105-110). Retrieved from http://gateway.webofknowledge.com/

Diamond thermistors and pressure transducers (Journal article)

Chalker, P. R., Johnston, C., & Werner, M. (2003). Diamond thermistors and pressure transducers. Semiconductor Science & Technology, 18(3), 113-116.

Effect of increased nitrogen incorporation on the growth of GaInNAs/GaAs (Journal article)

Bullough, T. J., Davies, S., Thomas, S., Joyce, T. B., & Chalker, P. R. (2003). Effect of increased nitrogen incorporation on the growth of GaInNAs/GaAs. SOLID-STATE ELECTRONICS, 47(3), 407-412. doi:10.1016/S0038-1101(02)00380-5

DOI: 10.1016/S0038-1101(02)00380-5

Growth of hafnium oxide thin films by Liquid Injection MOCVD Using Alkylamide and Hydroxylamide Precursors (Journal article)

Williams, P. A., Jones, A. C., Tobin, N. L., Chalker, P. R., Marshall, P., Taylor, S., . . . Davies, H. O. (2003). Growth of hafnium oxide thin films by Liquid Injection MOCVD Using Alkylamide and Hydroxylamide Precursors. Chem. Vapour Deposition, 9(6), 1-6.

Growth of lanthanum silicate thin films by liquid injection MOCVD using tris[bis(trimethylsilyl)amido]lanthanum (Journal article)

Aspinall, H. C., Williams, P. A., Gaskell, J., Jones, A. C., Roberts, J. L., Smith, L. M., . . . Critchlow, G. W. (2003). Growth of lanthanum silicate thin films by liquid injection MOCVD using tris[bis(trimethylsilyl)amido]lanthanum. CHEMICAL VAPOR DEPOSITION, 9(1), 7-+. doi:10.1002/cvde.200290009

DOI: 10.1002/cvde.200290009

Growth of praseodymium oxide thin films by liquid injection MOCVD using a novel praseodymium alkoxide precursor (Journal article)

Aspinall, H. C., Gaskell, J., Williams, P. A., Jones, A. C., Chalker, P. R., Marshall, P. A., . . . Critchlow, G. W. (2003). Growth of praseodymium oxide thin films by liquid injection MOCVD using a novel praseodymium alkoxide precursor. CHEMICAL VAPOR DEPOSITION, 9(5), 235-+. doi:10.1002/cvde.200304160

DOI: 10.1002/cvde.200304160

In-plane photovoltaic and photoconductive effects on GaInAs and GaInNAs double quantum well structures (Journal article)

Akcay, N., Erol, A., Arikan, M. C., Mazzucato, S., Chalker, P. R., & Joyce, T. B. (2003). In-plane photovoltaic and photoconductive effects on GaInAs and GaInNAs double quantum well structures. IEE PROCEEDINGS-OPTOELECTRONICS, 150(1), 96-98. doi:10.1049/ip-opt:20030043

DOI: 10.1049/ip-opt:20030043

LiBC electronic, vibrational, structural, and low-temperature chemical behavior of a layered material isoelectronic with MgB2 (Journal article)

Fogg, A. M., Chalker, P. R., Claridge, J. B., Darling, G. R., & Rosseinsky, M. J. (2003). LiBC electronic, vibrational, structural, and low-temperature chemical behavior of a layered material isoelectronic with MgB2. PHYSICAL REVIEW B, 67(24). doi:10.1103/PhysRevB.67.245106

DOI: 10.1103/PhysRevB.67.245106

Medium energy ion scattering studies of as-grown and annealed GaInNAs/GaAs quantum well (Journal article)

White, S. L., Thomas, S., Joyce, T. B., Bullough, T. J., Chalker, P. R., Noakes, T. C. Q., . . . Balkan, N. (2003). Medium energy ion scattering studies of as-grown and annealed GaInNAs/GaAs quantum well. SOLID-STATE ELECTRONICS, 47(3), 425-429. doi:10.1016/S0038-1101(02)00383-0

DOI: 10.1016/S0038-1101(02)00383-0

Optical properties of GaInNAs/GaAs quantum wells (Journal article)

Mazzucato, S., Erol, A., Potter, R. J., Balkan, N., Chalker, P. R., Thomas, S., . . . Bullough, T. J. (2003). Optical properties of GaInNAs/GaAs quantum wells. SOLID-STATE ELECTRONICS, 47(3), 483-487. doi:10.1016/S0038-1101(02)00394-5

DOI: 10.1016/S0038-1101(02)00394-5

S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides (Journal article)

Mazzucato, S., Potter, R. J., Erol, A., Balkan, N., Chalker, P. R., Joyce, T. B., . . . Fontaine, C. (2003). S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17(1-4), 242-244. doi:10.1016/S1386-9477(02)00783-X

DOI: 10.1016/S1386-9477(02)00783-X

Some recent developments in the chemical vapour deposition of electroceramic oxides (Journal article)

Jones, A. C., & Chalker, P. R. (2003). Some recent developments in the chemical vapour deposition of electroceramic oxides. Journal of Physics D: Applied Physics, 36(6), R53-R79. doi:10.1088/0022-3727/36/6/202

DOI: 10.1088/0022-3727/36/6/202

Some recent developments in the chemical vapour deposition of electroceramic oxides (Journal article)

Jones, A. C., & Chalker, P. R. (2003). Some recent developments in the chemical vapour deposition of electroceramic oxides. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 36(6), R80-R95. Retrieved from http://gateway.webofknowledge.com/

2002

Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit (Journal article)

Thomas, S., White, S., Chalker, P. R., Bullough, T. J., & Joyce, T. B. (2002). Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 13(9), 525-529. doi:10.1023/A:1019641611417

DOI: 10.1023/A:1019641611417

Novel mononuclear alkoxide precursors for the MOCVD of ZrO2 and HfO2 thin films (Journal article)

Williams, P. A., Roberts, J. L., Jones, A. C., Chalker, P. R., Tobin, N. L., Bickley, J. F., . . . Leedham, T. J. (2002). Novel mononuclear alkoxide precursors for the MOCVD of ZrO2 and HfO2 thin films. Advanced Materials, 14(13-14), 163-170.

A first transition series pseudotetrahedral oxynitride anion: synthesis and characterization of Ba(2)VO(3)N. (Journal article)

Clarke, S. J., Chalker, P. R., Holman, J., Michie, C. W., Puyet, M., & Rosseinsky, M. J. (2002). A first transition series pseudotetrahedral oxynitride anion: synthesis and characterization of Ba(2)VO(3)N.. Journal of the American Chemical Society, 124(13), 3337-3342. doi:10.1021/ja0122896

DOI: 10.1021/ja0122896

' Novel Mononuclear Alkoxide Precursors for the MOCVD of ZrO2 and HfO2 Thin Films' (Journal article)

Williams, P. A., Roberts, J. L., Jones, A. C., Chalker, P. R., Tobin, N. L., Bickley, J. F., . . . Leedham, T. J. (2002). ' Novel Mononuclear Alkoxide Precursors for the MOCVD of ZrO2 and HfO2 Thin Films'. Chemical Vapor Deposition, 8(4), 163-170.

A first transition series pseudotetrahedral oxynitride anion: Synthesis and characterization of Ba2VO3N (Journal article)

Clarke, S. J., Chalker, P. R., Holman, J., Michie, C. W., Puyet, M., & Rosseinsky, M. J. (2002). A first transition series pseudotetrahedral oxynitride anion: Synthesis and characterization of Ba2VO3N. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 124(13), 3337-3342. doi:10.1021/ja0122896

DOI: 10.1021/ja0122896

Chapter B4 3. Boron doping and characterisation (Chapter)

Johnston, C., Crossley, A., Werner, M., & Chalker, P. R. (2002). Chapter B4 3. Boron doping and characterisation. In EMIS (Ed.), Growth, Properties and Application of Diamond (Vol. 26, pp. 337-344). .: Electronic Materials Information Service.

Chemical beam epitaxy of GaN on Si (111) using AlAs butter layers (Journal article)

Huang, T. S., Joyce, T. B., Murray, R. T., Papworth, A. J., & Chalker, P. R. (2002). Chemical beam epitaxy of GaN on Si (111) using AlAs butter layers. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 35(7), 620-624. doi:10.1088/0022-3727/35/7/309

DOI: 10.1088/0022-3727/35/7/309

Compositional variation in as-grown GaInNAs/GaAs quantum well structures (Journal article)

Chalker, P. R., Davock, H., Thomas, S., Joyce, T. B., Bullough, T. J., Potter, R. J., & Balkan, N. (2001). Compositional variation in as-grown GaInNAs/GaAs quantum well structures. JOURNAL OF CRYSTAL GROWTH, 233(1-2), 1-4. doi:10.1016/S0022-0248(01)01535-4

DOI: 10.1016/S0022-0248(01)01535-4

HfO2 and ZrO2 alternative gate dielectrics for silicon devices by liquid injection chemical vapour deposition (Journal article)

Taylor, S., Williams, P. A., Roberts, J. L., Jones, A. C., & Chalker, P. R. (2002). HfO2 and ZrO2 alternative gate dielectrics for silicon devices by liquid injection chemical vapour deposition. ELECTRONICS LETTERS, 38(21), 1285-1286. doi:10.1049/el:20020801

DOI: 10.1049/el:20020801

MOCVD of HfO2 from alkoxide and alkylamide precursors (Journal article)

Roberts, J. L., Williams, P. A., Jones, A. C., Marshall, P., Chalker, P. R., Bickley, J. F., . . . Smith, L. M. (2003). MOCVD of HfO2 from alkoxide and alkylamide precursors. NOVEL MATERIALS AND PROCESSES FOR ADVANCED CMOS, 745, 173-178. Retrieved from http://gateway.webofknowledge.com/

Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit (Journal article)

Thomas, S., White, S., Chalker, P. R., Bullough, T. J., & Joyce, T. B. (2002). Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit. J. Mater. Sci.-Mater. In Electronics, 13(9)(9), 525-529.

Novel mononuclear alkoxide precursors for the MOCVD of ZrO2 and HfO2 thin films (Journal article)

Williams, P. A., Roberts, J. L., Jones, A. C., Chalker, P. R., Tobin, N. L., Bickley, J. F., . . . Leedham, T. J. (2002). Novel mononuclear alkoxide precursors for the MOCVD of ZrO2 and HfO2 thin films. CHEMICAL VAPOR DEPOSITION, 8(4), 163-170. doi:3.0.CO;2-V">10.1002/1521-3862(20020704)8:4<163::AID-CVDE163>3.0.CO;2-V

DOI: 10.1002/1521-3862(20020704)8:4<163::AID-CVDE163>3.0.CO;2-V

Novel mononuclear zirconium and hafnium alkoxides; improved precursors for the MOCVD of ZrO2 and HfO2 (Journal article)

Williams, P. A., Roberts, J. L., Jones, A. C., Chalker, P. R., Bickley, J. F., Steiner, A., . . . Leedham, T. J. (2002). Novel mononuclear zirconium and hafnium alkoxides; improved precursors for the MOCVD of ZrO2 and HfO2. J. Materials Chemistry, 12(2)(2), 165-167.

Novel mononuclear zirconium and hafnium alkoxides; improved precursors for the MOCVD of ZrO2 and HfO2 (Journal article)

Williams, P. A., Roberts, J. L., Jones, A. C., Chalker, P. R., Bickley, J. F., Steiner, A., . . . Leedham, T. J. (2002). Novel mononuclear zirconium and hafnium alkoxides; improved precursors for the MOCVD of ZrO2 and HfO2. JOURNAL OF MATERIALS CHEMISTRY, 12(2), 165-167. doi:10.1039/b109994a

DOI: 10.1039/b109994a

Optical characterization of GaInNAs (Conference Paper)

Potter, R. J., Mazzucato, S., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2001). Optical characterization of GaInNAs. In PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IX Vol. 4283 (pp. 638-644). doi:10.1117/12.432617

DOI: 10.1117/12.432617

2001

Composition-variations and phase-segregation in InGaAsN grown by CBE (Journal article)

Thomas, S., Bullough, T. J., Joyce, T. B., Zheng, J. G., & Chalker, P. R. (2001). Composition-variations and phase-segregation in InGaAsN grown by CBE. MICROSCOPY OF SEMICONDUCTING MATERIALS 2001, (169), 123-126. Retrieved from http://gateway.webofknowledge.com/

Embedded fibre Bragg grating sensors in advanced composite materials (Journal article)

Kuang, K. S. C., Kenny, R., Whelan, M. P., Cantwell, W. J., & Chalker, P. R. (2001). Embedded fibre Bragg grating sensors in advanced composite materials. COMPOSITES SCIENCE AND TECHNOLOGY, 61(10), 1379-1387. doi:10.1016/S0266-3538(01)00037-9

DOI: 10.1016/S0266-3538(01)00037-9

High - temperature Sensors Based on SiC and Diamond Technology (Chapter)

Werner, M., Krvtz, G., Mvller, H., Eickhoff, M., Gluche, P., Adamschik, M., . . . Chalker, P. R. (2001). High - temperature Sensors Based on SiC and Diamond Technology. In Sensor Applications. (Vol. 5, pp. 141-190). Weinheim: WILEY-VCH Verlag GmbH.

Residual strain measurement and impact response of optical fibre Bragg grating sensors in fibre metal laminates (Journal article)

Kuang, K. S. C., Kenny, R., Whelan, M. P., Cantwell, W. J., & Chalker, P. R. (2001). Residual strain measurement and impact response of optical fibre Bragg grating sensors in fibre metal laminates. SMART MATERIALS & STRUCTURES, 10(2), 338-346. doi:10.1088/0964-1726/10/2/321

DOI: 10.1088/0964-1726/10/2/321

Special issue on diamond sensors and actuators - Preface (Journal article)

Chalker, P. (2001). Special issue on diamond sensors and actuators - Preface. NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY, 11(2), U4. Retrieved from http://gateway.webofknowledge.com/

The effect of In/N ratio on the optical quality and lasing threshold in GaxIn1-xAs1-yNy/GaAs laser structures (Journal article)

Potter, R., Mazzucato, S., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2001). The effect of In/N ratio on the optical quality and lasing threshold in GaxIn1-xAs1-yNy/GaAs laser structures. SUPERLATTICES AND MICROSTRUCTURES, 29(2), 169-186. doi:10.1006/spmi.2000.0967

DOI: 10.1006/spmi.2000.0967

2000

B-doping and piezoresistivity of CVD diamond (Conference Paper)

Johnston, C., Crossley, A., Chalker, P. R., & Werner, M. (2000). B-doping and piezoresistivity of CVD diamond. In MICRO MATERIALS, PROCEEDINGS (pp. 867-872). Retrieved from http://gateway.webofknowledge.com/

Frequency dispersion and dielectric relaxation of La2Hf2O7 (Journal article)

Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Gaskell, J. M., & Jones, A. C. (2009). Frequency dispersion and dielectric relaxation of La2Hf2O7. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(1), 333-337. doi:10.1116/1.3043535

DOI: 10.1116/1.3043535

Gd silicate: A high-k dielectric compatible with high temperature annealing (Journal article)

Gottlob, H. D. B., Stefani, A., Schmidt, M., Lemme, M. C., Kurz, H., Mitrovic, I. Z., . . . Newcomb, S. B. (2009). Gd silicate: A high-k dielectric compatible with high temperature annealing. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(1), 249-252. doi:10.1116/1.3025904

DOI: 10.1116/1.3025904

High-k materials and their response to gamma ray radiation (Journal article)

Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Potter, R. J., Gaskell, J. M., & Jones, A. C. (2009). High-k materials and their response to gamma ray radiation. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(1), 411-415. doi:10.1116/1.3071848

DOI: 10.1116/1.3071848

Indium segregation in MOCVD InGaN layers studied by medium energy ion scattering (Journal article)

Chalker, P. R., Morrice, D., Joyce, T. B., Noakes, T. C. Q., Bailey, P., & Considine, L. (2000). Indium segregation in MOCVD InGaN layers studied by medium energy ion scattering. DIAMOND AND RELATED MATERIALS, 9(3-6), 520-523. doi:10.1016/S0925-9635(99)00259-9

DOI: 10.1016/S0925-9635(99)00259-9

Investigation of electromechanical distortions in gallium nitride by reflectance anisotropy spectroscopy (Journal article)

Morrice, D. E., Farrell, T., Joyce, T. B., & Chalker, P. R. (2000). Investigation of electromechanical distortions in gallium nitride by reflectance anisotropy spectroscopy. DIAMOND AND RELATED MATERIALS, 9(3-6), 460-463. doi:10.1016/S0925-9635(99)00282-4

DOI: 10.1016/S0925-9635(99)00282-4

Photoluminescence in Ga0.85In0.15As0.99N0.01/GaAs single quantum wells: Effect of low temperature heat treatment in N-2 (Journal article)

Potter, R. J., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2000). Photoluminescence in Ga0.85In0.15As0.99N0.01/GaAs single quantum wells: Effect of low temperature heat treatment in N-2. PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VIII, PTS 1 AND 2, 3944, 900-909. doi:10.1117/12.391403

DOI: 10.1117/12.391403

Photoluminescence in Ga0.85In0.15As0.99N0.01/GaAs single quantum wells: Effect of low temperature heat treatment in N2 (Conference Paper)

Potter, R. J., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2000). Photoluminescence in Ga0.85In0.15As0.99N0.01/GaAs single quantum wells: Effect of low temperature heat treatment in N2. In Proceedings of SPIE - The International Society for Optical Engineering Vol. 3944.

Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics (Journal article)

Gottlob, H. D. B., Schmidt, M., Stefani, A., Lemme, M. C., Kurz, H., Mitrovic, I. Z., . . . Newcomb, S. B. (2009). Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics. MICROELECTRONIC ENGINEERING, 86(7-9), 1642-1645. doi:10.1016/j.mee.2009.03.084

DOI: 10.1016/j.mee.2009.03.084

The material properties, growth technology and applications of wide bandgap semiconductors for sensors and electronics (Conference Paper)

Chalker, P. R. (2000). The material properties, growth technology and applications of wide bandgap semiconductors for sensors and electronics. In MICRO MATERIALS, PROCEEDINGS (pp. 857). Retrieved from http://gateway.webofknowledge.com/

1999

Wide bandgap semiconductor materials for high temperature electronics (Conference Paper)

Chalker, P. R. (1999). Wide bandgap semiconductor materials for high temperature electronics. In THIN SOLID FILMS Vol. 343 (pp. 616-622). doi:10.1016/S0040-6090(98)01672-1

DOI: 10.1016/S0040-6090(98)01672-1

Fabrication of aluminium nitride diamond and gallium nitride diamond SAW devices (Conference Paper)

Chalker, P. R., Joyce, T. B., Johnston, C., Crossley, J. A. A., Huddlestone, J., Whitfield, M. D., & Jackman, R. B. (1999). Fabrication of aluminium nitride diamond and gallium nitride diamond SAW devices. In DIAMOND AND RELATED MATERIALS Vol. 8 (pp. 309-313). doi:10.1016/S0925-9635(98)00263-5

DOI: 10.1016/S0925-9635(98)00263-5

Metalorganic molecular beam epitaxy of GaN and Al(Ga)N on GaAs(001) studied using laser reflectometry and reflectance anisotropy spectroscopy (Journal article)

Joyce, T. B., Chalker, P. R., & Farrell, T. (1999). Metalorganic molecular beam epitaxy of GaN and Al(Ga)N on GaAs(001) studied using laser reflectometry and reflectance anisotropy spectroscopy. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 10(8), 585-588. doi:10.1023/A:1008909008317

DOI: 10.1023/A:1008909008317

Optical reflectivity studies of GaN and AlN chemical beam epitaxy on GaAs(100) (Journal article)

Chalker, P. R., Joyce, T. B., & Farrell, T. (1999). Optical reflectivity studies of GaN and AlN chemical beam epitaxy on GaAs(100). DIAMOND AND RELATED MATERIALS, 8(2-5), 373-376. doi:10.1016/S0925-9635(98)00374-4

DOI: 10.1016/S0925-9635(98)00374-4

Raman and reflection anisotropy spectroscopic studies of GaN and AlN growth on GaAs(100) (Journal article)

Chalker, P. R., Joyce, T. B., Farrell, T., Johnston, C., Crossley, A., & Eccles, J. (1999). Raman and reflection anisotropy spectroscopic studies of GaN and AlN growth on GaAs(100). THIN SOLID FILMS, 343, 575-578. doi:10.1016/S0040-6090(98)01723-4

DOI: 10.1016/S0040-6090(98)01723-4

1998

Diamond films: Recent developments in theory and practice (Journal article)

Stoneham, A. M., Ford, I. J., & Chalker, P. R. (1998). Diamond films: Recent developments in theory and practice. MRS BULLETIN, 23(9), 28-31. doi:10.1557/S0883769400029328

DOI: 10.1557/S0883769400029328

Polycrystalline diamond films for acoustic wave devices (Journal article)

Whitfield, M. D., Audic, B., Flannery, C. M., Kehoe, L. P., Cream, G. M., Johnston, C., . . . Jackman, R. B. (1998). Polycrystalline diamond films for acoustic wave devices. DIAMOND AND RELATED MATERIALS, 7(2-5), 533-539. doi:10.1016/S0925-9635(97)00278-1

DOI: 10.1016/S0925-9635(97)00278-1

Electrochemistry at boron-doped diamond films grown on graphite substrates: redox-, adsorption and deposition processes (Journal article)

Goeting, C. H., Jones, F., Foord, J. S., Eklund, J. C., Marken, F., Compton, R. G., . . . Johnston, C. (1998). Electrochemistry at boron-doped diamond films grown on graphite substrates: redox-, adsorption and deposition processes. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 442(1-2), 207-216. doi:10.1016/S0022-0728(97)00456-7

DOI: 10.1016/S0022-0728(97)00456-7

High Temperature Contacts to Chemically Vapour Deposited Diamond FilmsReliability Issues (Chapter)

High Temperature Contacts to Chemically Vapour Deposited Diamond FilmsReliability Issues (2009). In High-Temperature Electronics. IEEE. doi:10.1109/9780470544884.ch83

DOI: 10.1109/9780470544884.ch83

1997

A review of diamond-like carbon technology (Journal article)

Chalker, P. R. (1997). A review of diamond-like carbon technology. IEE Colloquium (Digest), (59).

Measurement and calculation of the thermal expansion coefficient of diamond (Journal article)

Moelle, C., Klose, S., Szucs, F., Fecht, H. J., Johnston, C., Chalker, P. R., & Werner, M. (1997). Measurement and calculation of the thermal expansion coefficient of diamond. DIAMOND AND RELATED MATERIALS, 6(5-7), 839-842. doi:10.1016/S0925-9635(96)00674-7

DOI: 10.1016/S0925-9635(96)00674-7

Review of diamond-like carbon technology (Conference Paper)

Chalker, P. R. (1997). Review of diamond-like carbon technology. In IEE Colloquium (Digest).

Thin film diamond metal-insulator field effect transistor for high temperature applications (Journal article)

Pang, L. Y. S., Chan, S. S. M., Chalker, P. R., Johnston, C., & Jackman, R. B. (1997). Thin film diamond metal-insulator field effect transistor for high temperature applications. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 46(1-3), 124-128. doi:10.1016/S0921-5107(96)01946-0

DOI: 10.1016/S0921-5107(96)01946-0

High temperature Young's modulus of polycrystalline diamond (Journal article)

Werner, M., Klose, S., Szucs, F., Moelle, C., Fecht, H. J., Johnston, C., . . . BuckleyGolder, I. M. (1997). High temperature Young's modulus of polycrystalline diamond. DIAMOND AND RELATED MATERIALS, 6(2-4), 344-347. doi:10.1016/S0925-9635(96)00633-4

DOI: 10.1016/S0925-9635(96)00633-4

High temperature polycrystalline diamond metal-insulator-semiconductor field-effect-transistor (Journal article)

Pang, L. Y. S., Chan, S. S. M., Johnston, C., Chalker, P. R., & Jackman, R. B. (1997). High temperature polycrystalline diamond metal-insulator-semiconductor field-effect-transistor. DIAMOND AND RELATED MATERIALS, 6(2-4), 333-338. doi:10.1016/S0925-9635(96)00756-X

DOI: 10.1016/S0925-9635(96)00756-X

A thin film diamond p-channel field-effect transistor (Journal article)

Pang, L. Y. S., Chan, S. S. M., Jackman, R. B., Johnston, C., & Chalker, P. R. (1997). A thin film diamond p-channel field-effect transistor. APPLIED PHYSICS LETTERS, 70(3), 339-341. doi:10.1063/1.118408

DOI: 10.1063/1.118408

1996

How to fabricate low-resistance metal-diamond contacts (Journal article)

Werner, M., Job, R., Denisenko, A., Zaitsev, A., Fahrner, W. R., Johnston, C., . . . BuckleyGolder, I. M. (1996). How to fabricate low-resistance metal-diamond contacts. DIAMOND AND RELATED MATERIALS, 5(6-8), 723-727. doi:10.1016/0925-9635(95)00391-6

DOI: 10.1016/0925-9635(95)00391-6

Radiation hardness of DLC films produced by ion-assisted deposition (Journal article)

Prawer, S., Ran, B., Kalish, R., Johnston, C., Chalker, P., Bull, S. J., . . . Jones, A. M. (1996). Radiation hardness of DLC films produced by ion-assisted deposition. DIAMOND AND RELATED MATERIALS, 5(3-5), 405-409. doi:10.1016/0925-9635(95)00478-5

DOI: 10.1016/0925-9635(95)00478-5

The relationship between resistivity and boron doping concentration of single and polycrystalline diamond (Journal article)

Werner, M., Job, R., Zaitzev, A., Fahrner, W. R., Seifert, W., Johnston, C., & Chalker, P. R. (1996). The relationship between resistivity and boron doping concentration of single and polycrystalline diamond. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 154(1), 385-393. doi:10.1002/pssa.2211540127

DOI: 10.1002/pssa.2211540127

Thin film diamond sensor technology (Journal article)

Chalker, P. R., & Johnston, C. (1996). Thin film diamond sensor technology. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 154(1), 455-466. doi:10.1002/pssa.2211540132

DOI: 10.1002/pssa.2211540132

Electrical characterization of Al/Si ohmic contacts to heavily boron doped polycrystalline diamond films (Journal article)

Werner, M., Johnston, C., Chalker, P. R., Romani, S., & BuckleyGolder, I. M. (1996). Electrical characterization of Al/Si ohmic contacts to heavily boron doped polycrystalline diamond films. JOURNAL OF APPLIED PHYSICS, 79(5), 2535-2541. doi:10.1063/1.361119

DOI: 10.1063/1.361119

The application of CVD diamond to electronics within AEA technology (Conference Paper)

Johnston, C., Chalker, P. R., & BuckleyGolder, I. M. (1996). The application of CVD diamond to electronics within AEA technology. In EURODIAMOND '96 Vol. 52 (pp. 97-104). Retrieved from http://gateway.webofknowledge.com/

The current and future status of diamond in electronics (Conference Paper)

Chalker, P. R., & BuckleyGolder, I. M. (1996). The current and future status of diamond in electronics. In DIAMOND FOR ELECTRONIC APPLICATIONS Vol. 416 (pp. 375-382). Retrieved from http://gateway.webofknowledge.com/

1995

THE EFFECT OF METALLIZATION ON THE OHMIC CONTACT RESISTIVITY TO HEAVILY B-DOPED POLYCRYSTALLINE DIAMOND FILMS (Journal article)

WERNER, M., DORSCH, O., BAERWIND, H. U., OBERMEIER, E., JOHNSTON, C., CHALKER, P. R., & ROMANI, S. (1995). THE EFFECT OF METALLIZATION ON THE OHMIC CONTACT RESISTIVITY TO HEAVILY B-DOPED POLYCRYSTALLINE DIAMOND FILMS. IEEE TRANSACTIONS ON ELECTRON DEVICES, 42(7), 1344-1351. doi:10.1109/16.391217

DOI: 10.1109/16.391217

FORMATION OF EPITAXIAL DIAMOND SILICON-CARBIDE HETEROJUNCTIONS (Journal article)

CHALKER, P. R., JOHNSTON, C., ROMANI, S., AYRES, C. F., BUCKLEYGOLDER, I. M., KROTZ, G., . . . RUSHWORTH, S. A. (1995). FORMATION OF EPITAXIAL DIAMOND SILICON-CARBIDE HETEROJUNCTIONS. DIAMOND AND RELATED MATERIALS, 4(5-6), 632-636. doi:10.1016/0925-9635(94)05217-4

DOI: 10.1016/0925-9635(94)05217-4

HIGH-PERFORMANCE DIAMOND AND DIAMOND-LIKE COATINGS (Journal article)

BULL, S. J., & CHALKER, P. R. (1995). HIGH-PERFORMANCE DIAMOND AND DIAMOND-LIKE COATINGS. JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY, 47(4), 16-19. Retrieved from http://gateway.webofknowledge.com/

ALUMINUM AND NICKEL CONTACT METALLIZATIONS ON THIN-FILM DIAMOND (Journal article)

CHAN, S. S. M., PEUCHERET, C., MCKEAG, R. D., JACKMAN, R. B., JOHNSTON, C., & CHALKER, P. R. (1995). ALUMINUM AND NICKEL CONTACT METALLIZATIONS ON THIN-FILM DIAMOND. JOURNAL OF APPLIED PHYSICS, 78(4), 2877-2879. doi:10.1063/1.360096

DOI: 10.1063/1.360096

HIGH-TEMPERATURE CONTACTS TO CHEMICALLY VAPOR-DEPOSITED DIAMOND FILMS - RELIABILITY ISSUES (Journal article)

JOHNSTON, C., CHALKER, P. R., BUCKLEYGOLDER, I. M., VANROSSUM, M., WERNER, M., & OBERMEIER, E. (1995). HIGH-TEMPERATURE CONTACTS TO CHEMICALLY VAPOR-DEPOSITED DIAMOND FILMS - RELIABILITY ISSUES. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 29(1-3), 206-210. doi:10.1016/0921-5107(94)04033-Z

DOI: 10.1016/0921-5107(94)04033-Z

HIGH-TEMPERATURE STABILITY OF CHEMICALLY VAPOR-DEPOSITED DIAMOND DIODES (Journal article)

MCKEAG, R. D., CHAN, S. S. M., JOHNSON, C., CHALKER, P. R., & JACKMAN, R. B. (1995). HIGH-TEMPERATURE STABILITY OF CHEMICALLY VAPOR-DEPOSITED DIAMOND DIODES. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 29(1-3), 223-227. doi:10.1016/0921-5107(94)04046-7

DOI: 10.1016/0921-5107(94)04046-7

1994

INDENTATION RESPONSE OF DIAMOND THIN-FILMS (Journal article)

BULL, S. J., CHALKER, P. R., JOHNSTON, C., & COOPER, C. V. (1994). INDENTATION RESPONSE OF DIAMOND THIN-FILMS. DIAMOND AND RELATED MATERIALS, 4(1), 43-52. doi:10.1016/0925-9635(94)90067-1

DOI: 10.1016/0925-9635(94)90067-1

THE EFFECT OF ROUGHNESS ON THE FRICTION AND WEAR OF DIAMOND THIN-FILMS (Journal article)

BULL, S. J., CHALKER, P. R., JOHNSTON, C., & MOORE, V. (1994). THE EFFECT OF ROUGHNESS ON THE FRICTION AND WEAR OF DIAMOND THIN-FILMS. SURFACE & COATINGS TECHNOLOGY, 68, 603-610. doi:10.1016/0257-8972(94)90224-0

DOI: 10.1016/0257-8972(94)90224-0

INTERACTION OF HYDROGEN WITH CHEMICAL-VAPOR-DEPOSITION DIAMOND SURFACES - A THERMAL-DESORPTION STUDY (Journal article)

CHUA, L. H., JACKMAN, R. B., FOORD, J. S., CHALKER, P. R., JOHNSTON, C., & ROMANI, S. (1994). INTERACTION OF HYDROGEN WITH CHEMICAL-VAPOR-DEPOSITION DIAMOND SURFACES - A THERMAL-DESORPTION STUDY. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 12(6), 3033-3039. doi:10.1116/1.578932

DOI: 10.1116/1.578932

NUCLEATION AND GROWTH OF CVD DIAMOND ON MAGNESIUM-OXIDE (100) AND TITANIUM NITRIDE MAGNESIUM-OXIDE (100) SURFACES (Journal article)

CHALKER, P. R., JOHNSTON, C., ROMANI, S., AYRES, C. F., & BUCKLEYGOLDER, I. M. (1994). NUCLEATION AND GROWTH OF CVD DIAMOND ON MAGNESIUM-OXIDE (100) AND TITANIUM NITRIDE MAGNESIUM-OXIDE (100) SURFACES. DIAMOND AND RELATED MATERIALS, 3(4-6), 393-397. doi:10.1016/0925-9635(94)90191-0

DOI: 10.1016/0925-9635(94)90191-0

VERY-LOW RESISTIVITY AL-SI OHMIC CONTACTS TO BORON-DOPED POLYCRYSTALLINE DIAMOND FILMS (Journal article)

WERNER, M., DORSCH, O., BAERWIND, H. U., ERSOY, A., OBERMEIER, E., JOHNSTON, C., . . . BUCKLEYGOLDER, I. M. (1994). VERY-LOW RESISTIVITY AL-SI OHMIC CONTACTS TO BORON-DOPED POLYCRYSTALLINE DIAMOND FILMS. DIAMOND AND RELATED MATERIALS, 3(4-6), 983-985. doi:10.1016/0925-9635(94)90313-1

DOI: 10.1016/0925-9635(94)90313-1

CHARGE-TRANSPORT IN HEAVILY B-DOPED POLYCRYSTALLINE DIAMOND FILMS (Journal article)

WERNER, M., DORSCH, O., BAERWIND, H. U., OBERMEIER, E., HAASE, L., SEIFERT, W., . . . CHALKER, P. R. (1994). CHARGE-TRANSPORT IN HEAVILY B-DOPED POLYCRYSTALLINE DIAMOND FILMS. APPLIED PHYSICS LETTERS, 64(5), 595-597. doi:10.1063/1.111088

DOI: 10.1063/1.111088

1993

DEGRADATION MECHANISMS OF PASSIVATED AND UNPASSIVATED DIAMOND THERMISTORS (Journal article)

CHALKER, P. R., JOHNSTON, C., CROSSLEY, J. A. A., AMBROSE, J., AYRES, C. F., HARPER, R. E., . . . KOBASHI, K. (1993). DEGRADATION MECHANISMS OF PASSIVATED AND UNPASSIVATED DIAMOND THERMISTORS. DIAMOND AND RELATED MATERIALS, 2(5-7), 1100-1106. doi:10.1016/0925-9635(93)90280-F

DOI: 10.1016/0925-9635(93)90280-F

DIAMOND DEVICE DELINEATION VIA EXCIMER-LASER PATTERNING (Journal article)

JOHNSTON, C., CHALKER, P. R., BUCKLEYGOLDER, I. M., MARSDEN, P. J., & WILLIAMS, S. W. (1993). DIAMOND DEVICE DELINEATION VIA EXCIMER-LASER PATTERNING. DIAMOND AND RELATED MATERIALS, 2(5-7), 829-834. doi:10.1016/0925-9635(93)90233-R

DOI: 10.1016/0925-9635(93)90233-R

Diamond device delineation via excimer laser patterning (Journal article)

Johnston, C., Chalker, P. R., Buckley-Golder, I. M., Marsden, P. J., & Williams, S. W. (1993). Diamond device delineation via excimer laser patterning. Diamond and Related Materials, 2(5 -7 pt 2), 829-834.

PIEZORESISTIVE EFFECT OF BORON-DOPED DIAMOND THIN-FILMS (Journal article)

DORSCH, O., HOLZNER, K., WERNER, M., OBERMEIER, E., HARPER, R. E., JOHNSTON, C., . . . BUCKLEYGOLDER, I. M. (1993). PIEZORESISTIVE EFFECT OF BORON-DOPED DIAMOND THIN-FILMS. DIAMOND AND RELATED MATERIALS, 2(5-7), 1096-1099. doi:10.1016/0925-9635(93)90279-B

DOI: 10.1016/0925-9635(93)90279-B

SPACE-CHARGE-LIMITED CURRENT FLOW AND TRAP DENSITY IN UNDOPED DIAMOND FILMS (Journal article)

WERNER, M., DORSCH, O., HINZE, A., OBERMEIER, E., HARPER, R. E., JOHNSTON, C., . . . BUCKLEYGOLDER, I. M. (1993). SPACE-CHARGE-LIMITED CURRENT FLOW AND TRAP DENSITY IN UNDOPED DIAMOND FILMS. DIAMOND AND RELATED MATERIALS, 2(5-7), 825-828. doi:10.1016/0925-9635(93)90232-Q

DOI: 10.1016/0925-9635(93)90232-Q

Space-charge-limited current flow and trap density in undoped diamond films (Journal article)

Werner, M., Dorsch, O., Hinze, A., Obermeier, E., Harper, R. E., Johnston, C., . . . Buckley-Golder, I. M. (1993). Space-charge-limited current flow and trap density in undoped diamond films. Diamond and Related Materials, 2(5 -7 pt 2), 825-828.

1992

MECHANICAL-PROPERTIES OF DIAMOND THIN-FILMS (Journal article)

BULL, S. J., CHALKER, P. R., & JOHNSTON, C. (1992). MECHANICAL-PROPERTIES OF DIAMOND THIN-FILMS. MATERIALS SCIENCE AND TECHNOLOGY, 8(8), 679-684. doi:10.1179/mst.1992.8.8.679

DOI: 10.1179/mst.1992.8.8.679

CONTACTS TO DOPED AND UNDOPED POLYCRYSTALLINE DIAMOND FILMS (Journal article)

HARPER, R. E., JOHNSTON, C., CHALKER, P. R., TOTTERDELL, D., BUCKLEYGOLDER, I. M., WERNER, M., . . . VANROSSUM, M. (1992). CONTACTS TO DOPED AND UNDOPED POLYCRYSTALLINE DIAMOND FILMS. DIAMOND AND RELATED MATERIALS, 1(5-6), 692-696. doi:10.1016/0925-9635(92)90193-R

DOI: 10.1016/0925-9635(92)90193-R

HIGH-TEMPERATURE RAMAN STUDIES OF DIAMOND THIN-FILMS (Journal article)

JOHNSTON, C., CROSSLEY, A., CHALKER, P. R., BUCKLEYGOLDER, I. M., & KOBASHI, K. (1992). HIGH-TEMPERATURE RAMAN STUDIES OF DIAMOND THIN-FILMS. DIAMOND AND RELATED MATERIALS, 1(5-6), 450-456. doi:10.1016/0925-9635(92)90145-E

DOI: 10.1016/0925-9635(92)90145-E

Electrical properties of doped and undoped diamond films (Journal article)

Harper, R., Johnston, C., Blamires, N., Chalker, P., & Buckley-Golder, I. (1992). Electrical properties of doped and undoped diamond films. R and D: Research and Development Kobe Steel Engineering Reports, 42(2), 24-27.

ALUMINUM ACCUMULATION IN RELATION TO SENILE PLAQUE AND NEUROFIBRILLARY TANGLE FORMATION IN THE BRAINS OF PATIENTS WITH RENAL-FAILURE (Journal article)

CANDY, J. M., MCARTHUR, F. K., OAKLEY, A. E., TAYLOR, G. A., CHEN, C., MOUNTFORT, S. A., . . . EDWARDSON, J. A. (1992). ALUMINUM ACCUMULATION IN RELATION TO SENILE PLAQUE AND NEUROFIBRILLARY TANGLE FORMATION IN THE BRAINS OF PATIENTS WITH RENAL-FAILURE. JOURNAL OF THE NEUROLOGICAL SCIENCES, 107(2), 210-218. doi:10.1016/0022-510X(92)90291-R

DOI: 10.1016/0022-510X(92)90291-R

LUBRICATED SLIDING WEAR OF PHYSICALLY VAPOR-DEPOSITED TITANIUM NITRIDE (Journal article)

BULL, S. J., & CHALKER, P. R. (1992). LUBRICATED SLIDING WEAR OF PHYSICALLY VAPOR-DEPOSITED TITANIUM NITRIDE. SURFACE & COATINGS TECHNOLOGY, 50(2), 117-126. doi:10.1016/0257-8972(92)90052-C

DOI: 10.1016/0257-8972(92)90052-C

1991

EVALUATING THE INFLUENCE OF GROWTH-PARAMETERS ON CVD DIAMOND DEPOSITION USING FACTORIAL ANALYSIS (Journal article)

JOHNSTON, C., AYRES, C. F., & CHALKER, P. R. (1991). EVALUATING THE INFLUENCE OF GROWTH-PARAMETERS ON CVD DIAMOND DEPOSITION USING FACTORIAL ANALYSIS. JOURNAL DE PHYSIQUE IV, 1(C2), 915-921. Retrieved from http://gateway.webofknowledge.com/

HIGH-TEMPERATURE STRESS MEASUREMENTS IN CVD DIAMOND FILMS (Journal article)

JOHNSTON, C., CROSSLEY, A., JONES, A. M., CHALKER, P. R., CULLEN, F. L., & BUCKLEYGOLDER, I. M. (1991). HIGH-TEMPERATURE STRESS MEASUREMENTS IN CVD DIAMOND FILMS. JOURNAL DE PHYSIQUE IV, 1(C2), 931-937. Retrieved from http://gateway.webofknowledge.com/

ELECTRICAL-PROPERTIES OF DOPED AND UNDOPED CHEMICALLY VAPOR-DEPOSITED DIAMOND FILMS (Journal article)

HARPER, R. E., JOHNSTON, C., BLAMIRES, N. G., CHALKER, P. R., & BUCKLEYGOLDER, I. M. (1991). ELECTRICAL-PROPERTIES OF DOPED AND UNDOPED CHEMICALLY VAPOR-DEPOSITED DIAMOND FILMS. SURFACE & COATINGS TECHNOLOGY, 47(1-3), 344-355. doi:10.1016/0257-8972(91)90300-L

DOI: 10.1016/0257-8972(91)90300-L

EVALUATION OF INTERNAL-STRESSES PRESENT IN CHEMICAL VAPOR-DEPOSITION DIAMOND FILMS (Journal article)

CHALKER, P. R., JONES, A. M., JOHNSTON, C., & BUCKLEYGOLDER, I. M. (1991). EVALUATION OF INTERNAL-STRESSES PRESENT IN CHEMICAL VAPOR-DEPOSITION DIAMOND FILMS. SURFACE & COATINGS TECHNOLOGY, 47(1-3), 365-374. doi:10.1016/0257-8972(91)90302-D

DOI: 10.1016/0257-8972(91)90302-D

A REVIEW OF THE METHODS FOR THE EVALUATION OF COATING-SUBSTRATE ADHESION (Journal article)

CHALKER, P. R., BULL, S. J., & RICKERBY, D. S. (1991). A REVIEW OF THE METHODS FOR THE EVALUATION OF COATING-SUBSTRATE ADHESION. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 140, 583-592. doi:10.1016/0921-5093(91)90482-3

DOI: 10.1016/0921-5093(91)90482-3

THE INFLUENCE OF TITANIUM INTERLAYERS ON THE ADHESION OF TITANIUM NITRIDE COATINGS OBTAINED BY PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION (Journal article)

BULL, S. J., CHALKER, P. R., AYRES, C. F., & RICKERBY, D. S. (1991). THE INFLUENCE OF TITANIUM INTERLAYERS ON THE ADHESION OF TITANIUM NITRIDE COATINGS OBTAINED BY PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 139, 71-78. doi:10.1016/0921-5093(91)90599-I

DOI: 10.1016/0921-5093(91)90599-I

CHARACTERIZATION OF DIAMOND AND DIAMOND-LIKE FILMS (Conference Paper)

CHALKER, P. R. (1991). CHARACTERIZATION OF DIAMOND AND DIAMOND-LIKE FILMS. In DIAMOND AND DIAMOND-LIKE FILMS AND COATINGS Vol. 266 (pp. 127-150). Retrieved from http://gateway.webofknowledge.com/

Degassing of RS 2014 aluminium (Journal article)

Tweed, J. H., Chalker, P. R., & Young, R. M. K. (1991). Degassing of RS 2014 aluminium. Metal Powder Report, 46(10), 16-22. doi:10.1016/0026-0657(91)90972-4

DOI: 10.1016/0026-0657(91)90972-4

ELECTRICAL AND ELECTRONIC-PROPERTIES OF DIAMOND FILMS (Journal article)

HARPER, R. E., JOHNSTON, C., CHALKER, P. R., TOTTERDELL, D., BUCKLEYGOLDER, I. M., & KOBASHI, K. (1991). ELECTRICAL AND ELECTRONIC-PROPERTIES OF DIAMOND FILMS. APPLICATIONS OF DIAMOND FILMS AND RELATED MATERIALS, 73, 335-340. Retrieved from http://gateway.webofknowledge.com/

Review of the methods for the evaluation of coating-substrate adhesion (Journal article)

Chalker, P. R., Bull, S. J., & Rickerby, D. S. (1991). Review of the methods for the evaluation of coating-substrate adhesion. Materials Science and Engineering A, A140(1-2), 583-592.

1990

SURFACE ALTERATION OF LNBA2CU3O7-X FOLLOWING EXPOSURE TO MOISTURE O-2 AND CO2 (Journal article)

MYHRA, S., CHALKER, P. R., MOSELEY, P. T., & RIVIERE, J. C. (1990). SURFACE ALTERATION OF LNBA2CU3O7-X FOLLOWING EXPOSURE TO MOISTURE O-2 AND CO2. PHYSICA C, 165(3-4), 270-278. doi:10.1016/0921-4534(90)90203-Q

DOI: 10.1016/0921-4534(90)90203-Q

DETERMINATION OF IMPURITY DOPANT DISTRIBUTIONS IN DIAMOND FILMS BY SIMS (Journal article)

BUCKLEYGOLDER, I. M., CHALKER, P. R., GLASS, J. T., KOBASHI, K., & NAKAUE, A. (1990). DETERMINATION OF IMPURITY DOPANT DISTRIBUTIONS IN DIAMOND FILMS BY SIMS. CARBON, 28(6), 801. doi:10.1016/0008-6223(90)90311-L

DOI: 10.1016/0008-6223(90)90311-L

1989

COMPARISON OF THE REGIONAL DISTRIBUTION OF TRANSFERRIN RECEPTORS AND ALUMINUM IN THE FOREBRAIN OF CHRONIC RENAL DIALYSIS PATIENTS (Journal article)

CANDY, J. M., MORRIS, C. M., OAKLEY, A. E., TAYLOR, G. A., MOUNTFORT, S. A., CHALKER, P. R., . . . EDWARDSON, J. A. (1989). COMPARISON OF THE REGIONAL DISTRIBUTION OF TRANSFERRIN RECEPTORS AND ALUMINUM IN THE FOREBRAIN OF CHRONIC RENAL DIALYSIS PATIENTS. BIOCHEMICAL SOCIETY TRANSACTIONS, 17(4), 669-670. doi:10.1042/bst0170669

DOI: 10.1042/bst0170669

X-RAY PHOTOELECTRON-SPECTRA OF PEROVSKITE-TYPE COBALT OXIDES LA1-XSRXCOO3-Y (X=0.4, 0.6) (Journal article)

BOCQUET, A. E., CHALKER, P., DOBSON, J. F., HEALY, P. C., MYHRA, S., & THOMPSON, J. G. (1989). X-RAY PHOTOELECTRON-SPECTRA OF PEROVSKITE-TYPE COBALT OXIDES LA1-XSRXCOO3-Y (X=0.4, 0.6). PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 160(3-4), 252-258. doi:10.1016/0921-4534(89)90058-0

DOI: 10.1016/0921-4534(89)90058-0

A SIMS INVESTIGATION OF HYDROGEN PENETRATION OF TITANIUM ELECTRODES (Journal article)

BLACKWOOD, D. J., PETER, L. M., BISHOP, H. E., CHALKER, P. R., & WILLIAMS, D. E. (1989). A SIMS INVESTIGATION OF HYDROGEN PENETRATION OF TITANIUM ELECTRODES. ELECTROCHIMICA ACTA, 34(10), 1401-1403. doi:10.1016/0013-4686(89)87178-6

DOI: 10.1016/0013-4686(89)87178-6

APPLICATIONS OF A HIGH SPATIAL-RESOLUTION COMBINED AES SIMS INSTRUMENT (Journal article)

BISHOP, H. E., MOON, D. P., MARRIOTT, P., & CHALKER, P. R. (1989). APPLICATIONS OF A HIGH SPATIAL-RESOLUTION COMBINED AES SIMS INSTRUMENT. VACUUM, 39(10), 929-939. doi:10.1016/0042-207X(89)90704-5

DOI: 10.1016/0042-207X(89)90704-5

HIGH SPATIAL-RESOLUTION SIMS INVESTIGATION OF OXIDES FORMED ON STAINLESS-STEEL UNDER PWR CONDITIONS (Journal article)

MARRIOTT, P., COULING, S. B., & CHALKER, P. R. (1989). HIGH SPATIAL-RESOLUTION SIMS INVESTIGATION OF OXIDES FORMED ON STAINLESS-STEEL UNDER PWR CONDITIONS. APPLIED SURFACE SCIENCE, 37(2), 217-232. doi:10.1016/0169-4332(89)90484-4

DOI: 10.1016/0169-4332(89)90484-4

1988

SIMS STUDIES OF SCALE GROWTH-PROCESSES (Journal article)

MOON, D. P., HARRIS, A. W., CHALKER, P. R., & MOUNTFORT, S. (1988). SIMS STUDIES OF SCALE GROWTH-PROCESSES. MATERIALS SCIENCE AND TECHNOLOGY, 4(12), 1101-1106. doi:10.1179/mst.1988.4.12.1101

DOI: 10.1179/mst.1988.4.12.1101

1987

THE INFLUENCE OF CERIUM, YTTRIUM AND LANTHANUM ION-IMPLANTATION ON THE OXIDATION BEHAVIOR OF A 20CR-25NI-NB STAINLESS-STEEL IN CARBON-DIOXIDE AT 900-1050-DEGREES-C (Journal article)

BENNETT, M. J., BISHOP, H. E., CHALKER, P. R., & TUSON, A. T. (1987). THE INFLUENCE OF CERIUM, YTTRIUM AND LANTHANUM ION-IMPLANTATION ON THE OXIDATION BEHAVIOR OF A 20CR-25NI-NB STAINLESS-STEEL IN CARBON-DIOXIDE AT 900-1050-DEGREES-C. MATERIALS SCIENCE AND ENGINEERING, 90, 177-190. doi:10.1016/0025-5416(87)90210-2

DOI: 10.1016/0025-5416(87)90210-2

THE IDENTIFICATION AND CHARACTERIZATION OF MIXED OXIDATION-STATES AT OXIDIZED TITANIUM SURFACES BY ANALYSIS OF X-RAY PHOTOELECTRON-SPECTRA (Journal article)

CARLEY, A. F., CHALKER, P. R., RIVIERE, J. C., & ROBERTS, M. W. (1987). THE IDENTIFICATION AND CHARACTERIZATION OF MIXED OXIDATION-STATES AT OXIDIZED TITANIUM SURFACES BY ANALYSIS OF X-RAY PHOTOELECTRON-SPECTRA. JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS I, 83, 351-370. doi:10.1039/f19878300351

DOI: 10.1039/f19878300351

1985

DEFECTS IN OXIDE OVERLAYERS AT NICKEL SINGLE-CRYSTAL SURFACES (Journal article)

CARLEY, A. F., CHALKER, P. R., & ROBERTS, M. W. (1985). DEFECTS IN OXIDE OVERLAYERS AT NICKEL SINGLE-CRYSTAL SURFACES. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 399(1816), 167-179. doi:10.1098/rspa.1985.0053

DOI: 10.1098/rspa.1985.0053

Undated

Engineered tunnel-barrier terahertz rectifiers for optical nantennas (Presentation material)

Mitrovic, I., Sedghi, N., Weerakkody, D., Ralph, J. F., Hall, S., Wrench, J., . . . Beeby, S. (n.d.). Engineered tunnel-barrier terahertz rectifiers for optical nantennas. San Jose, CA, USA.