Professor Paul Chalker BSc(Hons), PhD, FRSC, FIMMM
Professor Materials, Design and Manufacturing Eng
- Work email Pchalker@liverpool.ac.uk
- Personal Websitehttps://orcid.org/0000-0002-2295-6332
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2024
Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga<sub>2</sub>O<sub>3</sub> (Journal article)
Nicol, D., Reynolds, S., Barr, K., Roberts, J. W., Jarman, J. J., Chalker, P. R., & Massabuau, F. C. (2024). Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga<sub>2</sub>O<sub>3</sub>. physica status solidi (b). doi:10.1002/pssb.2023004702023
Ni/Au contacts to corundum <i>α</i>-Ga<sub>2</sub>O<sub>3</sub> (Journal article)
Massabuau, F. C. -P., Adams, F., Nicol, D., Jarman, J. C., Frentrup, M., Roberts, J. W., . . . Oliver, R. A. (2023). Ni/Au contacts to corundum <i>α</i>-Ga<sub>2</sub>O<sub>3</sub>. JAPANESE JOURNAL OF APPLIED PHYSICS, 62(SF). doi:10.35848/1347-4065/acbc28Hydrogen-related 3.8 eV UV luminescence in <i>α</i>-Ga<sub>2</sub>O<sub>3</sub> (Journal article)
Nicol, D., Oshima, Y., Roberts, J. W., Penman, L., Cameron, D., Chalker, P. R., . . . Massabuau, F. C. -P. (2023). Hydrogen-related 3.8 eV UV luminescence in <i>α</i>-Ga<sub>2</sub>O<sub>3</sub>. APPLIED PHYSICS LETTERS, 122(6). doi:10.1063/5.01351032022
<p>Structural and electrical investigation of MI<sub>2</sub>M and MI<sub>3</sub>M diodes for improved non-linear, low bias rectification</p> (Journal article)
Noureddine, I. N., Sedghi, N., Wrench, J. S., Mitrovic, I. Z., Chalker, P. R., & Hall, S. (2022). <p>Structural and electrical investigation of MI<sub>2</sub>M and MI<sub>3</sub>M diodes for improved non-linear, low bias rectification</p>. SOLID-STATE ELECTRONICS, 194. doi:10.1016/j.sse.2022.108349(Digital Presentation) Optimization of MIM Rectifiers for Terahertz Rectennas (Journal article)
Tekin, S. B., Almalki, S., Vezzoli, A., O’Brien, L., Hall, S., Chalker, P. R., & Mitrovic, I. Z. (2022). (Digital Presentation) Optimization of MIM Rectifiers for Terahertz Rectennas. ECS Meeting Abstracts, MA2022-01(19), 1076. doi:10.1149/ma2022-01191076mtgabsAtomic Layer Vs. Sol-Gel Deposited Coatings for Long Cycle-Life Li-Ion Battery Positive Electrodes (Journal article)
Powell, R., Lim, J., Neale, A. R., Chalker, P. R., & Hardwick, L. J. (2022). Atomic Layer Vs. Sol-Gel Deposited Coatings for Long Cycle-Life Li-Ion Battery Positive Electrodes. ECS Meeting Abstracts, MA2022-01(4), 515. doi:10.1149/ma2022-014515mtgabs(Digital Presentation) Optimization of MIM Rectifiers for Terahertz Rectennas (Conference Paper)
Tekin, S. B., Almalki, S., Vezzoli, A., O’Brien, L., Hall, S., Chalker, P. R., & Mitrovic, I. Z. (2022). (Digital Presentation) Optimization of MIM Rectifiers for Terahertz Rectennas. In ECS Transactions Vol. 108 (pp. 69-79). The Electrochemical Society. doi:10.1149/10802.0069ecst2021
Fabrication and modelling of MInM diodes with low turn-on voltage (Journal article)
Noureddine, I. N., Sedghi, N., Wrench, J., Chalker, P., Mitrovic, I. Z., & Hall, S. (2021). Fabrication and modelling of MInM diodes with low turn-on voltage. SOLID-STATE ELECTRONICS, 184. doi:10.1016/j.sse.2021.108053Study of Ti contacts to corundum α-Ga2O3 (Journal article)
Massabuau, F., Nicol, D., Adams, F., Jarman, J., Roberts, J., Kovacs, A., . . . Oliver, R. (n.d.). Study of Ti contacts to corundum α-Ga2O3. Journal of Physics D: Applied Physics. doi:10.1088/1361-6463/ac0d28Oxides for Rectenna Technology (Journal article)
Mitrovic, I. Z., Almalki, S., Tekin, S. B., Sedghi, N., Chalker, P. R., & Hall, S. (n.d.). Oxides for Rectenna Technology. Materials, 14(18), 5218. doi:10.3390/ma14185218Single and Triple Insulator Metal-Insulator-Metal Diodes for Infrared Rectennas (Journal article)
Tekin, S., Das, P., Weerakkody, A. D., Sedghi, N., Hall, S., Mitrovic, I. Z., . . . Chalker, P. R. (2021). Single and Triple Insulator Metal-Insulator-Metal Diodes for Infrared Rectennas. Solid-State Electronics. doi:10.1016/j.sse.2021.108096Progress in atomic layer deposited [alpha]-Ga2O3 materials and solar-blind detectors (Conference Paper)
Massabuau, F., Roberts, J. W., Nicol, D., Edwards, P. R., McLelland, M., Dallas, G. L., . . . Chalker, P. R. (2021). Progress in atomic layer deposited [alpha]-Ga2O3 materials and solar-blind detectors. In F. H. Teherani, D. C. Look, & D. J. Rogers (Eds.), Oxide-based Materials and Devices XII. SPIE. doi:10.1117/12.25887292020
Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering (Journal article)
Barthel, A., Roberts, J., Napari, M., Frentrup, M., Huq, T., Kovács, A., . . . Massabuau, F. (n.d.). Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering. Micromachines, 11(12), 1128. doi:10.3390/mi11121128Enhanced electrochemical performance by GeOx-Coated MXene nanosheet anode in lithium-ion batteries (Journal article)
Liu, C., Zhao, Y., Yi, R., Wu, H., Yang, W., Li, Y., . . . Zhao, C. (2020). Enhanced electrochemical performance by GeOx-Coated MXene nanosheet anode in lithium-ion batteries. Electrochimica Acta, 358. doi:10.1016/j.electacta.2020.136923Femtosecond laser micro-structuring of amorphous polyether(ether)ketone at 775 nm and 387 nm (Journal article)
Li, Q., Perrie, W., Potter, R., Allegre, O., Li, Z., Tang, Y., . . . Dearden, G. (2020). Femtosecond laser micro-structuring of amorphous polyether(ether)ketone at 775 nm and 387 nm. Journal of Physics D: Applied Physics, 53(36), 365301. doi:10.1088/1361-6463/ab8ed8Single and Triple Insulator Tunnel Rectifiers for Infrared Energy Harvesting (Conference Paper)
Tekin, S. B., Das, P., Weerakkody, A. D., Sedghi, N., Hall, S., Mitrovic, I. Z., . . . Chalker, P. R. (2020). Single and Triple Insulator Tunnel Rectifiers for Infrared Energy Harvesting. In 2020 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS). doi:10.1109/EUROSOI-ULIS49407.2020.9365388Facile preparation of Co3O4 nanoparticles incorporating with highly conductive MXene nanosheets as high-performance anodes for lithium-ion batteries (Journal article)
Zhao, Y., Liu, C., Yi, R., Li, Z., Chen, Y., Li, Y., . . . Zhao, C. (2020). Facile preparation of Co3O4 nanoparticles incorporating with highly conductive MXene nanosheets as high-performance anodes for lithium-ion batteries. Electrochimica Acta, 345, 136203. doi:10.1016/j.electacta.2020.136203Ti alloyed $\alpha$-Ga$_2$O$_3$: route towards wide band gap engineering (Preprint)
Influence of Polymorphism on the Electronic Structure of Ga$_2$O$_3$ (Preprint)
Influence of Polymorphism on the Electronic Structure of Ga<sub>2</sub>O<sub>3</sub> (Journal article)
Swallow, J. E. N., Vorwerk, C., Mazzolini, P., Vogt, P., Bierwagen, O., Karg, A., . . . Regoutz, A. (2020). Influence of Polymorphism on the Electronic Structure of Ga<sub>2</sub>O<sub>3</sub>. CHEMISTRY OF MATERIALS, 32(19), 8460-8470. doi:10.1021/acs.chemmater.0c02465(Invited) Band Line-up of High-k Oxides on GaN (Journal article)
Mitrovic, I. Z., Das, P., Jones, L., Gibbon, J., Dhanak, V. R., Mahapatra, R., . . . Thayne, I. G. (2020). (Invited) Band Line-up of High-k Oxides on GaN. ECS Meeting Abstracts, MA2020-01(15), 1043. doi:10.1149/ma2020-01151043mtgabsNb-doped TiO2 coatings developed by high power impulse magnetron sputtering-chemical vapor deposition hybrid deposition process (Journal article)
Kulczyk-Malecka, J., Donaghy, D., Delfour-Peyrethon, B., Werner, M., Chalker, P. R., Bradley, J. W., & Kelly, P. J. (2020). Nb-doped TiO2 coatings developed by high power impulse magnetron sputtering-chemical vapor deposition hybrid deposition process. Journal of Vacuum Science & Technology A, 38(3), 033410. doi:10.1116/6.0000118(Invited) Band Line-up of High-k Oxides on GaN (Journal article)
Mitrovic, I. Z., Das, P., Jones, L., Gibbon, J., Dhanak, V. R., Mahapatra, R., . . . Thayne, I. G. (2020). (Invited) Band Line-up of High-k Oxides on GaN. ECS Transactions, 97(1), 67-81. doi:10.1149/09701.0067ecstEffect of surface treatment on electrical properties of GaN metal-insulator-semiconductor devices with Al2O3 gate dielectric (Journal article)
Cai, Y., Liu, W., Cui, M., Sun, R., Liang, Y. C., Wen, H., . . . Zhao, C. (2020). Effect of surface treatment on electrical properties of GaN metal-insulator-semiconductor devices with Al2O3 gate dielectric. JAPANESE JOURNAL OF APPLIED PHYSICS, 59(4). doi:10.35848/1347-4065/ab7863Ablation of amorphous Polyethy( ethyl)letone (PEEK) by a femtosecond Ti:sapphire laser (Conference Paper)
Li, Q., Perrie, W., Tang, Y., Allegre, O., Ho, J., Chalker, P., . . . Dearden, G. (2020). Ablation of amorphous Polyethy( ethyl)letone (PEEK) by a femtosecond Ti:sapphire laser. In LASER-BASED MICRO- AND NANOPROCESSING XIV Vol. 11268. doi:10.1117/12.2543735Microstructure and mechanical properties of Cu-modified AlSi10Mg fabricated by Laser-Powder Bed Fusion (Journal article)
Garmendia, X., Chalker, S., Bilton, M., Sutcliffe, C. J., & Chalker, P. R. (2020). Microstructure and mechanical properties of Cu-modified AlSi10Mg fabricated by Laser-Powder Bed Fusion. Materialia, 100590. doi:10.1016/j.mtla.2020.100590Band Line-up Investigation of Atomic Layer Deposited TiAlO and GaAlO on GaN (Journal article)
Das, P., Jones, L. A. H., Gibbon, J. T., Dhanak, V. R., Partida-Manzanera, T., Roberts, J. W., . . . Mitrovic, I. Z. (2020). Band Line-up Investigation of Atomic Layer Deposited TiAlO and GaAlO on GaN. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 9(6). doi:10.1149/2162-8777/aba4f4A study on ultrafast laser micromachining and optical properties of amorphous polyether(ether)ketone (PEEK) films (Conference Paper)
Li, Q., Perrie, W., Tang, Y., Allegre, O., Ho, J., Chalker, P., . . . Dearden, G. (2020). A study on ultrafast laser micromachining and optical properties of amorphous polyether(ether)ketone (PEEK) films. In Procedia CIRP Vol. 94 (pp. 840-845). Elsevier BV. doi:10.1016/j.procir.2020.09.1132019
Low temperature growth and optical properties of alpha-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition (Journal article)
Roberts, J. W., Chalker, P. R., Ding, B., Oliver, R. A., Gibbon, J. T., Jones, L. A. H., . . . Massabuau, F. C. -P. (2019). Low temperature growth and optical properties of alpha-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition. JOURNAL OF CRYSTAL GROWTH, 528. doi:10.1016/j.jcrysgro.2019.125254Atomic layer deposited α-Ga<sub>2</sub>O<sub>3</sub> solar-blind photodetectors (Journal article)
Moloney, J., Tesh, O., Singh, M., Roberts, J. W., Jarman, J. C., Lee, L. C., . . . Massabuau, F. C. -P. (2019). Atomic layer deposited α-Ga<sub>2</sub>O<sub>3</sub> solar-blind photodetectors. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 52(47). doi:10.1088/1361-6463/ab3b763D-structured multi-walled carbon nanotubes/copper nanowires composite as a porous current collector for the enhanced silicon-based anode (Journal article)
Zhao, Y., Liu, C., Sun, Y., Yi, R., Cai, Y., Li, Y., . . . Zhao, C. (2019). 3D-structured multi-walled carbon nanotubes/copper nanowires composite as a porous current collector for the enhanced silicon-based anode. JOURNAL OF ALLOYS AND COMPOUNDS, 803, 505-513. doi:10.1016/j.jallcom.2019.06.302Low temperature growth and optical properties of {\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition (Preprint)
Comparison of atomic layer deposited Al<sub>2</sub>O<sub>3</sub> and (Ta<sub>2</sub>O<sub>5</sub>)<sub>0.12</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>0.88</sub> gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (Journal article)
Partida-Manzanera, T., Zaidi, Z. H., Roberts, J. W., Dolmanan, S. B., Lee, K. B., Houston, P. A., . . . Potter, R. J. (2019). Comparison of atomic layer deposited Al<sub>2</sub>O<sub>3</sub> and (Ta<sub>2</sub>O<sub>5</sub>)<sub>0.12</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>0.88</sub> gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors. JOURNAL OF APPLIED PHYSICS, 126(3). doi:10.1063/1.5049220Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices (Conference Paper)
Cai, Y., Wang, Y., Cui, M., Liu, W., Wen, H., Zhao, C., . . . Chalker, P. R. (2019). Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices. In 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019). doi:10.1109/icicdt.2019.8790844The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters (Conference Paper)
Cui, M., Cai, Y., Bu, Q., Liu, W., Wen, H., Mitrovic, I. Z., . . . Zhao, C. (2019). The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters. In 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019). doi:10.1109/icicdt.2019.8790909Alloyed Cu/Si core-shell nanoflowers on the three-dimensional graphene foam as an anode for lithium-ion batteries (Journal article)
Liu, C., Zhao, Y., Yi, R., Sun, Y., Li, Y., Yang, L., . . . Zhao, C. (2019). Alloyed Cu/Si core-shell nanoflowers on the three-dimensional graphene foam as an anode for lithium-ion batteries. ELECTROCHIMICA ACTA, 306, 45-53. doi:10.1016/j.electacta.2019.03.071AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HFETs Based DC-DC Boost Converters with Integrated Gate Drivers (Conference Paper)
Cui, M., Bu, Q., Cai, Y., Sun, R., Liu, W., Wen, H., . . . Zhao, C. (2019). AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HFETs Based DC-DC Boost Converters with Integrated Gate Drivers. In 2019 10TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND ECCE ASIA (ICPE 2019 - ECCE ASIA). doi:10.23919/icpe2019-ecceasia42246.2019.8796971Monolithic Integration Design of GaN-based Power Chip Including Gate Driver for High-Temperature DC-DC Converters (Journal article)
Cui, M., Bu, Q., Cai, Y., Sun, R., Liu, W., Wen, H., . . . Zhao, C. (n.d.). Monolithic Integration Design of GaN-based Power Chip Including Gate Driver for High-Temperature DC-DC Converters. Japanese Journal of Applied Physics. doi:10.7567/1347-4065/ab1313Effect of HCl cleaning on InSb-Al2O3 MOS capacitors (Journal article)
Vavasour, O. J., Jefferies, R., Walker, M., Roberts, J. W., Meakin, N. R., Gammon, P. M., . . . Ashley, T. (2019). Effect of HCl cleaning on InSb-Al2O3 MOS capacitors. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 34(3). doi:10.1088/1361-6641/ab03312018
Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs (Conference Paper)
Cui, M., Cai, Y., Lam, S., Liu, W., Zhao, C., Mitrovic, I. Z., . . . Zhao, C. (2018). Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs. In 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC). IEEE. doi:10.1109/edssc.2018.8487160The Over-Reset Phenomenon in Ta<sub>2</sub>O<sub>5</sub> RRAM Device Investigated by the RTN-Based Defect Probing Technique (Journal article)
Chai, Z., Zhang, W., Freitas, P., Hatem, F., Zhang, J. F., Marsland, J., . . . Robertson, J. (2018). The Over-Reset Phenomenon in Ta<sub>2</sub>O<sub>5</sub> RRAM Device Investigated by the RTN-Based Defect Probing Technique. IEEE ELECTRON DEVICE LETTERS, 39(7), 955-958. doi:10.1109/LED.2018.2833149Band alignments at Ga<sub>2</sub>O<sub>3</sub> heterojunction interfaces with Si and Ge (Journal article)
Gibbon, J. T., Jones, L., Roberts, J. W., Althobaiti, M., Chalker, P. R., Mitrovic, I. Z., & Dhanak, V. R. (2018). Band alignments at Ga<sub>2</sub>O<sub>3</sub> heterojunction interfaces with Si and Ge. AIP ADVANCES, 8(6). doi:10.1063/1.5034459Band alignments at Ga2O3 heterojunction interfaces with Si and Ge (Journal article)
Gibbon, J. T., Jones, L., Roberts, J. W., Althobaiti, M., Chalker, P. R., Mitrovic, I. Z., & Dhanak, V. R. (2018). Band alignments at Ga2O3 heterojunction interfaces with Si and Ge. AIP Advances, 8(6). doi:10.1063/1.5034459Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs (Journal article)
Zaidi, Z. H., Lee, K. B., Roberts, J. W., Guiney, I., Qian, H., Jiang, S., . . . Houston, P. A. (2018). Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. JOURNAL OF APPLIED PHYSICS, 123(18). doi:10.1063/1.5027822The 2018 GaN power electronics roadmap (Journal article)
Amano, H., Baines, Y., Beam, E., Borga, M., Bouchet, T., Chalker, P. R., . . . Zhang, Y. (2018). The 2018 GaN power electronics roadmap. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 51(16). doi:10.1088/1361-6463/aaaf9dalpha-Ga2O3 grown by low temperature atomic layer deposition on sapphire (Journal article)
Roberts, J. W., Jarman, J. C., Johnstone, D. N., Midgley, P. A., Chalker, P. R., Oliver, R. A., & Massabuau, F. C. -P. (2018). alpha-Ga2O3 grown by low temperature atomic layer deposition on sapphire. JOURNAL OF CRYSTAL GROWTH, 487, 23-27. doi:10.1016/j.jcrysgro.2018.02.014Elucidation of ALD MgZnO deposition processes using low energy ion scattering (Journal article)
Werner, M., Roberts, J. W., Potter, R. J., Dawson, K., & Chalker, P. R. (2018). Elucidation of ALD MgZnO deposition processes using low energy ion scattering. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(2). doi:10.1116/1.5015958A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density (Journal article)
Jin, J., Zhang, J., Shaw, A., Kudina, V., Mitrovic, I., Wrench, J. S., . . . Hall, S. (2018). A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density. Journal of Physics D: Applied Physics, 51(6). doi:10.1088/1361-6463/aaa4a2Composition-variations and phase-segregation in InGaAsN grown by CBE (Journal article)
Thomas, S., Bullough, T. J., Joyce, T. B., Zheng, J. G., & Chalker, P. R. (2001). Composition-variations and phase-segregation in InGaAsN grown by CBE. MICROSCOPY OF SEMICONDUCTING MATERIALS 2001, (169), 123-126. Retrieved from https://www.webofscience.com/Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells (Journal article)
Gass, M. H., Bullough, T. J., Papworth, A., Thomas, S., Joyce, T. B., Chalker, P. R., . . . Balkan, N. (2003). Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells. MICROSCOPY OF SEMICONDUCTING MATERIALS 2003, (180), 225-228. Retrieved from https://www.webofscience.com/Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells (Chapter)
Gass, M. H., Bullough, T. J., Papworth, A., Thomas, S., Joyce, T. B., Chalker, P. R., . . . Balkan, N. (2018). Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells. In Microscopy of Semiconducting Materials 2003 (pp. 225-228). doi:10.1201/97813510746362017
Total Dose Effects and Bias Instabilities of (NH<sub>4</sub>)<sub>2</sub>S Passivated Ge MOS Capacitors With Hf<i><sub>x</sub></i>Zr<sub>1-<i>x</i></sub>O<i><sub>y</sub></i> Thin Films (Journal article)
Mu, Y., Fang, Y., Zhao, C. Z., Zhao, C., Lu, Q., Qi, Y., . . . Chalker, P. R. (2017). Total Dose Effects and Bias Instabilities of (NH<sub>4</sub>)<sub>2</sub>S Passivated Ge MOS Capacitors With Hf<i><sub>x</sub></i>Zr<sub>1-<i>x</i></sub>O<i><sub>y</sub></i> Thin Films. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64(12), 2913-2921. doi:10.1109/TNS.2017.2768566Atomic Layer Deposition of HfO<sub>2</sub> Gate Dielectric with Surface Treatments and Post-metallization Annealing for Germanium MOSFETs (Conference Paper)
Liu, Q., Lam, S., Mu, Y., Zhao, C. Z., Zhao, Y., Fang, Y., . . . Chalker, P. R. (2017). Atomic Layer Deposition of HfO<sub>2</sub> Gate Dielectric with Surface Treatments and Post-metallization Annealing for Germanium MOSFETs. In 2017 IEEE 17TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) (pp. 491-494). Retrieved from https://www.webofscience.com/Effects of biased irradiation on charge trapping in HfO<inf>2</inf> dielectric thin films (Conference Paper)
Mu, Y., Zhao, C. Z., Lu, Q., Zhao, C., Qi, Y., Lam, S., . . . Chalker, P. R. (2017). Effects of biased irradiation on charge trapping in HfO<inf>2</inf> dielectric thin films. In AIP Conference Proceedings Vol. 1877. doi:10.1063/1.4999899Investigation of Anomalous Capacitance-Voltage Behavior Caused by Interface Dipoles and the Effect of Post-Metal-Annealing (Conference Paper)
Lu, Q., Zhao, C. Z., Zhao, C., Taylor, S., & Chalker, P. R. (2017). Investigation of Anomalous Capacitance-Voltage Behavior Caused by Interface Dipoles and the Effect of Post-Metal-Annealing. In 4TH INTERNATIONAL CONFERENCE ON THE ADVANCEMENT OF MATERIALS AND NANOTECHNOLOGY (ICAMN IV 2016) Vol. 1877. doi:10.1063/1.4999875Enhanced Switching Stability in Ta2O5 Resistive RAM by Fluorine Doping (Journal article)
Sedghi, N., Li, H., Brunell, I. F., Dawson, K., Guo, Y., Potter, R. J., . . . Chalker, P. R. (2017). Enhanced Switching Stability in Ta2O5 Resistive RAM by Fluorine Doping. Applied Physics Letters, 111(9). doi:10.1063/1.4991879Investigation of Anomalous Hysteresis in MOS Devices With ZrO2 Gate Dielectrics (Journal article)
Lu, Q., Qi, Y., Zhao, C. Z., Liu, C., Zhao, C., Taylor, S., & Chalker, P. R. (2017). Investigation of Anomalous Hysteresis in MOS Devices With ZrO2 Gate Dielectrics. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 17(3), 526-530. doi:10.1109/TDMR.2017.2731796Atomic layer deposition of niobium nitride from different precursors (Conference Paper)
Pizzol, P., Roberts, J. W., Wrench, J., Malyshev, O. B., Valizadeh, R., & Chalker, P. R. (2017). Atomic layer deposition of niobium nitride from different precursors. In IPAC 2017 - Proceedings of the 8th International Particle Accelerator Conference (pp. 1094-1097).Experimental band alignment of Ta<sub>2</sub>O<sub>5</sub>/GaN for MIS-HEMT applications (Conference Paper)
Sawangsri, K., Das, P., Supardan, S. N., Mitrovic, I. Z., Hall, S., Mahapatra, R., . . . Chalker, P. R. (2017). Experimental band alignment of Ta<sub>2</sub>O<sub>5</sub>/GaN for MIS-HEMT applications. In MICROELECTRONIC ENGINEERING Vol. 178 (pp. 178-181). doi:10.1016/j.mee.2017.04.010Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using <i>C</i>-<i>V</i> measurements (Conference Paper)
Shaw, A., Jin, J. D., Mitrovic, I. Z., Hall, S., Wrench, J. S., & Chalker, P. R. (2017). Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using <i>C</i>-<i>V</i> measurements. In MICROELECTRONIC ENGINEERING Vol. 178 (pp. 213-216). doi:10.1016/j.mee.2017.05.043Investigation of the electrical performance of hfo<sub>2</sub> dielectrics deposited on passivated germanium substrates (Conference Paper)
Lu, Q., Mu, Y., Zhao, Y., Zhao, C. Z., Taylor, S., & Chalker, P. R. (2017). Investigation of the electrical performance of hfo<sub>2</sub> dielectrics deposited on passivated germanium substrates. In 7TH INTERNATIONAL CONFERENCE ON KEY ENGINEERING MATERIALS (ICKEM 2017) Vol. 201. doi:10.1088/1757-899X/201/1/012029Capacitance-voltage characteristics measured through pulse technique on high-k dielectric MOS devices (Journal article)
Lu, Q., Qi, Y., Zhao, C. Z., Zhao, C., Taylor, S., & Chalker, P. R. (n.d.). Capacitance-voltage characteristics measured through pulse technique on high-k dielectric MOS devices. Vacuum. doi:10.1016/j.vacuum.2016.11.009Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications (Journal article)
Sawangsri, K., Das, P., Supardan, S. N., Mitrovic, I. Z., Hall, S., Mahapatra, R., . . . Chalker, P. R. (2017). Experimental band alignment of Ta2O5/GaN for MIS-HEMT applications. Microelectronic Engineering, 178, 178-181. doi:10.1016/j.mee.2017.04.010Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements (Journal article)
Shaw, A., Jin, J. D., Mitrovic, I. Z., Hall, S., Wrench, J. S., & Chalker, P. R. (2017). Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements. Microelectronic Engineering, 178, 213-216. doi:10.1016/j.mee.2017.05.043The influence of tertiary butyl hydrazine as a co-reactant on the atomic layer deposition of silver (Journal article)
Golrokhi, Z., Marshall, P. A., Romani, S., Rushworth, S., Chalker, P. R., & Potter, R. J. (2017). The influence of tertiary butyl hydrazine as a co-reactant on the atomic layer deposition of silver. Applied Surface Science, 399, 123-131. doi:10.1016/j.apsusc.2016.11.192The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM (Journal article)
Sedghi, N., Li, H., Brunell, I. F., Dawson, K., Potter, R. J., Guo, Y., . . . Chalker, P. R. (2017). The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM. Applied Physics Letters, 110(10), 102902-1-102902-4. doi:10.1063/1.4978033Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition (Journal article)
Jin, J., Wrench, J., Gibbon, J. T., Hesp, D., Shaw, A. P., Mitrovic, I. Z., . . . Hall, S. (2017). Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition. IEEE Transactions on Electron Devices, 64(3), 1225-1230. doi:10.1109/TED.2016.2647284Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements (Journal article)
Mu, Y., Zhao, C. Z., Lu, Q., Zhao, C., Qi, Y., Lam, S., . . . Chalker, P. R. (2017). Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 64(1), 673-682. doi:10.1109/TNS.2016.26335492016
Wider Memory Window in Ta2O5 RRAM by Doping (Conference Paper)
Sedghi, N., Li, H., Brunell, I., Potter, R., Hall, S., Dawson, K., . . . Robertson, J. (2016). Wider Memory Window in Ta2O5 RRAM by Doping. In 47th IEEE Semiconductor Interface Specialists Conference. Catamaran Hotel, San Diego, CA.Atomic layer deposition of Nb-doped ZnO for thin film transistors (Journal article)
Shaw, A., Wrench, J. S., Jin, J. D., Whittles, T. J., Mitrovic, I. Z., Raja, M., . . . Hall, S. (2016). Atomic layer deposition of Nb-doped ZnO for thin film transistors. APPLIED PHYSICS LETTERS, 109(22). doi:10.1063/1.4968194ZnO MESFETS for application to Intelligent Windows (Journal article)
Hall, S., Chalker, P. R., & Mitrovic, I. (2016). ZnO MESFETS for application to Intelligent Windows. Impact, 2016(2), 49-51. doi:10.21820/23987073.2016.2.49Anomalous Capacitance-Voltage Hysteresis in MOS Devices with ZrO<sub>2</sub> and HfO<sub>2</sub> Dielectrics (Conference Paper)
Lu, Q., Qi, Y., Zhao, C. Z., Zhao, C., Taylor, S., & Chalker, P. R. (2016). Anomalous Capacitance-Voltage Hysteresis in MOS Devices with ZrO<sub>2</sub> and HfO<sub>2</sub> Dielectrics. In 2016 5TH INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE). Retrieved from https://www.webofscience.com/Tunnel-Barrier Rectifiers for Optical Nantennas (Journal article)
Mitrovic, I. Z., Weerakkody, A. D., Sedghi, N., Hall, S., Ralph, J. F., Wrench, J. S., . . . Beeby, S. (2016). Tunnel-Barrier Rectifiers for Optical Nantennas. DIELECTRICS FOR NANOSYSTEMS 7: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 72(2), 287-299. doi:10.1149/07202.0287ecstPhotochemical atomic layer deposition and etching (Journal article)
Chalker, P. R. (2016). Photochemical atomic layer deposition and etching. SURFACE & COATINGS TECHNOLOGY, 291, 258-263. doi:10.1016/j.surfcoat.2016.02.046Composition used in making coated quantum dot beads for use in fabrication of quantum dot-based light-emitting devices, comprises powder comprising beads having primary matrix material, quantum dot nanoparticles, and surface coating (Patent)
Werner, M., Gresty, N., Pickett, N., Chalker, P., Harris, J., Naasani, I., & Nasaani, I. (n.d.). WO2014140936-A2; US2014264196-A1; WO2014140936-A3; TW201503419-A; KR2015126961-A; CN105051152-A; EP2970762-A2, Composition used in making coated quantum dot beads for use in fabrication of quantum dot-based light-emitting devices, comprises powder comprising beads having primary matrix material, quantum dot nanoparticles, and surface coating.Fabrication of composite functional body/substrate for aerospace or automotive industry or for electronics industry, comprises selectively melting build of functional material with directed energy beam (Patent)
Sutcliffe, C., & Chalker, P. R. (n.d.). WO2006131716-A2; AU2006256588-A1; EP1893372-A2; CA2609905-A1; JP2008546208-W; US2009117403-A1; US7754137-B2; WO2006131716-A3; EP1893372-B1; ES2477866-T3; CA2609905-C, Fabrication of composite functional body/substrate for aerospace or automotive industry or for electronics industry, comprises selectively melting build of functional material with directed energy beam.Formation of cerium doped high dielectric film for use in semiconductor device, involves providing metal source precursor and specific cerium precursor to substrate (Patent)
Chalker, P. R., & Heys, P. N. (n.d.). WO2009143452-A1; TW200949005-A, Formation of cerium doped high dielectric film for use in semiconductor device, involves providing metal source precursor and specific cerium precursor to substrate.Formation of cerium-doped high-k dielectric film for improving high-k gate property of, e.g. memory application, comprises delivering metal-source precursor and cerium precursor to substrate by chemical phase deposition process (Patent)
Chalker, P. R., & Heys, P. N. (n.d.). WO2009143456-A1; TW200951242-A; EP2297379-A1; US2011165401-A1; CN102137952-A; JP2011525699-W; KR2012007949-A; CN102137952-B; US8613975-B2; SG166557-A1; SG166557-B; IL209378-A; TW467045-B1, Formation of cerium-doped high-k dielectric film for improving high-k gate property of, e.g. memory application, comprises delivering metal-source precursor and cerium precursor to substrate by chemical phase deposition process.Formation of high-dielectric constant dielectric film used for memory and/or logic application, comprises vapor deposition process involving delivering metal source precursor and titanium precursor(s) to substrate (Patent)
Chalker, P. R., Heys, P. N., & Paul Raymond, C. (n.d.). WO2009143460-A1; TW200949939-A; EP2281073-A1; KR2011017397-A; CN102066608-A; US2011151227-A1; JP2011521479-W; SG166589-A1; IL209379-A, Formation of high-dielectric constant dielectric film used for memory and/or logic application, comprises vapor deposition process involving delivering metal source precursor and titanium precursor(s) to substrate.High-k dielectric fun-forming lattice for film for use in improving gate property of semiconductor device, e.g. memory application, comprises zirconium oxide and/or hafnium oxide, and titanium atoms (Patent)
Chalker, P. R., & Heys, P. N. (n.d.). WO2009143458-A1; TW200949006-A, High-k dielectric fun-forming lattice for film for use in improving gate property of semiconductor device, e.g. memory application, comprises zirconium oxide and/or hafnium oxide, and titanium atoms.Method for fabricating quadrupole mass spectrometer (QMS) component e.g. ion source, involves exposing several layers of bed of curable material to the incident radiation, to produce several layers of cured material of QMS component (Patent)
Chalker, P., Sutcliffe, C., & Taylor, S. (n.d.). WO2010026426-A2; WO2010026426-A3; EP2324486-A2; US2011174970-A1; JP2012502420-W; HK1158359-A0; US8551388-B2, Method for fabricating quadrupole mass spectrometer (QMS) component e.g. ion source, involves exposing several layers of bed of curable material to the incident radiation, to produce several layers of cured material of QMS component.New mixed metal oxide, particularly strontium-hafnium-titanium oxide used as dielectric in electrical, electronic, magnetic, mechanical, optical or thermal device (Patent)
Suchomel, M., Rosseinsky, M., Niu, H., Chalker, P., Yan, L., & Chalker, P. R. (n.d.). WO2010116184-A1; KR2011138274-A; CA2757921-A1; EP2417062-A1; US2012091541-A1; CN102482114-A; JP2012523361-W; HK1167256-A0; IN201107452-P4; SG175114-A1, New mixed metal oxide, particularly strontium-hafnium-titanium oxide used as dielectric in electrical, electronic, magnetic, mechanical, optical or thermal device.Polyoxypropylene-polyoxyethylene alkyl-ether prodn.|comprises polycrystalline diamond diaphragm on a support, a detection device for measuring deflection, etc (Patent)
Totterdell, D. H. J., & Chalker, P. R. (n.d.). EP579405-A; GB2268583-A; EP579405-A1; US5365789-A; GB2268583-B, Polyoxypropylene-polyoxyethylene alkyl-ether prodn.|comprises polycrystalline diamond diaphragm on a support, a detection device for measuring deflection, etc.Preparing a functional device comprising a substrate and an element comprising a mixed metal oxide by exposing discrete volatilized amounts of a strontium precursor, a hafnium or zirconium precursor and a titanium precursor to the substrate (Patent)
Suchomel, M., Rosseinsky, M., Niu, H., Chalker, P., & Yan, L. (n.d.). WO2011124913-A1, Preparing a functional device comprising a substrate and an element comprising a mixed metal oxide by exposing discrete volatilized amounts of a strontium precursor, a hafnium or zirconium precursor and a titanium precursor to the substrate.X=ray window and method of mfr.|is a thin diamond membrane with on one surface an integral array of diamond rib supports (Patent)
Chalker, P. R., & Paul, R. C. (n.d.). GB2288272-A; EP676772-A1; JP7294700-A; GB2288272-B; EP676772-B1; DE69500941-E, X=ray window and method of mfr.|is a thin diamond membrane with on one surface an integral array of diamond rib supports.(Invited) Tunnel-Barrier Rectifiers for Optical Nantennas (Journal article)
Mitrovic, I. Z., Weerakkody, A. D., Sedghi, N., Hall, S., Ralph, J. F., Wrench, J. S., . . . Beeby, S. (2016). (Invited) Tunnel-Barrier Rectifiers for Optical Nantennas. ECS Meeting Abstracts, MA2016-01(16), 1011. doi:10.1149/ma2016-01/16/1011Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications (Journal article)
Mu, Y., Zhao, C. Z., Qi, Y., Lam, S., Zhao, C., Lu, Q., . . . Chalker, P. R. (2016). Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 372, 14-28. doi:10.1016/j.nimb.2016.01.035Controlling the physical and electrical properties of ALD grown ZnO using Nb as a dopant (Conference Paper)
Shaw, A., Jin, J. D., Mitrovic, I. Z., Hall, S., Wrench, J. S., & Chalker, P. R. (2016). Controlling the physical and electrical properties of ALD grown ZnO using Nb as a dopant. In 2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2016) (pp. 28-31). Retrieved from https://www.webofscience.com/Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics (Journal article)
Roberts, J., Chalker, P., Lee, K. B., Houston, P., Cho, S. J., Thayne, I., . . . Humphreys, C. (2016). Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics. Applied Physics Letters, 108(7). doi:10.1063/1.4942093Silver ink formulations for sinter-free printing of conductive films (Journal article)
Black, K., Singh, J., Mehta, D., Sung, S., Sutcliffe, C. J., & Chalker, P. R. (2016). Silver ink formulations for sinter-free printing of conductive films. Scientific Reports, 6. doi:10.1038/srep20814CVD deposition of Nb based materials for SRF cavities (Conference Paper)
Pizzol, P., Valizadeh, R., Malyshev, O. B., Stenning, G. B. G., Heil, T., Pattalwar, S., & Chalker, P. R. (2016). CVD deposition of Nb based materials for SRF cavities. In IPAC 2016 - Proceedings of the 7th International Particle Accelerator Conference (pp. 2241-2244).2015
Electrical Properties and Interfacial Studies of Hf<i><sub>x</sub></i>Ti<sub>1-<i>x</i></sub>O<sub>2</sub> High Permittivity Gate Insulators Deposited on Germanium Substrates (Journal article)
Lu, Q., Mu, Y., Roberts, J. W., Althobaiti, M., Dhanak, V. R., Wu, J., . . . Chalker, P. R. (2015). Electrical Properties and Interfacial Studies of Hf<i><sub>x</sub></i>Ti<sub>1-<i>x</i></sub>O<sub>2</sub> High Permittivity Gate Insulators Deposited on Germanium Substrates. MATERIALS, 8(12), 8169-8182. doi:10.3390/ma8125454Hafnia and alumina on sulphur passivated germanium (Journal article)
Althobaiti, M., Mather, S., Sedghi, N., Dhanak, V. R., Mitrovic, I. Z., Hall, S., & Chalker, P. R. (2015). Hafnia and alumina on sulphur passivated germanium. Vacuum, 122, 306-309. doi:10.1016/j.vacuum.2015.03.017Physical and Electrical Characterization of Mg-Doped ZnO Thin-Film Transistors (Conference Paper)
Shaw, A., Whittles, T. J., Mitrovic, I. Z., Jin, J. D., Wrench, J. S., Hesp, D., . . . Hall, S. (2015). Physical and Electrical Characterization of Mg-Doped ZnO Thin-Film Transistors. In ESSDERC 2015 PROCEEDINGS OF THE 45TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (pp. 206-209). Retrieved from https://www.webofscience.com/(Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films (Journal article)
Chalker, P. R., Marshall, P. A., Dawson, K., Sutcliffe, C. J., Brunell, I. F., Sedghi, N., . . . Potter, R. J. (2015). (Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films. ECS Transactions, 69(7), 139-145. doi:10.1149/06907.0139ecstHysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing (Journal article)
Lu, Q., Zhao, C., Mu, Y., Zhao, C. Z., Taylor, S., & Chalker, P. R. (2015). Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing. MATERIALS, 8(8), 4829-4842. doi:10.3390/ma8084829(Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films (Journal article)
Chalker, P. R., Marshall, P. A., Dawson, K., Sutcliffe, C. J., Brunell, I. F., Sedghi, N., . . . Potter, R. J. (2015). (Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films. ECS Meeting Abstracts, MA2015-02(26), 993. doi:10.1149/ma2015-02/26/993Atomic-layer deposited thulium oxide as a passivation layer on germanium (Journal article)
Mitrovic, I. Z., Hall, S., Althobaiti, M., Hesp, D., Dhanak, V., Santoni, A., . . . Schamm-Chardon, S. (2015). Atomic-layer deposited thulium oxide as a passivation layer on germanium. Journal of Applied Physics, 117(21). doi:10.1063/1.4922121Tailoring Precursors for Deposition: Synthesis, Structure, and Thermal Studies of Cyclopentadienylcopper(I) Isocyanide Complexes (Journal article)
Willcocks, A. M., Pugh, T., Cosham, S. D., Hamilton, J., Sung, S. L., Heil, T., . . . Johnson, A. L. (2015). Tailoring Precursors for Deposition: Synthesis, Structure, and Thermal Studies of Cyclopentadienylcopper(I) Isocyanide Complexes. INORGANIC CHEMISTRY, 54(10), 4869-4881. doi:10.1021/acs.inorgchem.5b00448A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al<sub>2</sub>O<sub>3</sub> on GaN based metal oxide semiconductor capacitor (Journal article)
Cho, S. J., Roberts, J. W., Guiney, I., Li, X., Ternent, G., Floros, K., . . . Thayne, I. G. (2015). A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al<sub>2</sub>O<sub>3</sub> on GaN based metal oxide semiconductor capacitor. MICROELECTRONIC ENGINEERING, 147, 277-280. doi:10.1016/j.mee.2015.04.067Enhanced low voltage nonlinearity in resonant tunneling metal–insulator–insulator–metal nanostructures (Conference Paper)
Weerakkody, A. D., Sedghi, N., Mitrovic, I. Z., van Zalinge, H., Nemr Noureddine, I., Hall, S., . . . Durose, K. (2015). Enhanced low voltage nonlinearity in resonant tunneling metal–insulator–insulator–metal nanostructures. In Microelectronic Engineering Vol. 147 (pp. 298-301). Elsevier BV. doi:10.1016/j.mee.2015.04.110Engineered Ta2O5/Al2O3 and Nb2O5/Al2O3 tunnel barriers for next-generation low turn-on voltage high-speed rectifiers (Poster)
Mitrovic, I., Sedghi, N., Weerakkody, D., Ralph, J. F., Hall, S., Wrench, J., & Chalker, P. R. (n.d.). Engineered Ta2O5/Al2O3 and Nb2O5/Al2O3 tunnel barriers for next-generation low turn-on voltage high-speed rectifiers. Poster session presented at the meeting of European Materials Research Society (EMRS 2015). Lille, France.Vacuum ultraviolet photochemical selectivearea atomic layer deposition of Al2O3 dielectrics (Journal article)
Chalker, P. R., Marshall, P. A., Dawson, K., Brunell, I. F., Sutcliffe, C. J., & Potter, R. J. (2015). Vacuum ultraviolet photochemical selectivearea atomic layer deposition of Al2O3 dielectrics. AIP Advances, 5(1). doi:10.1063/1.4905887Heteroleptic titanium alkoxides as single-source precursors for MOCVD of micro-structured TiO2 (Journal article)
Ashraf, S., Aspinall, H. C., Bacsa, J., Chalker, P. R., Davies, H. O., Jones, A. C., . . . Wrench, J. S. (2015). Heteroleptic titanium alkoxides as single-source precursors for MOCVD of micro-structured TiO2. Polyhedron, 85, 761-769. doi:10.1016/j.poly.2014.10.0072014
Compositional tuning of atomic layer deposited MgZnO for thin film transistors (Journal article)
Wrench, J. S., Brunell, I. F., Chalker, P. R., Jin, J. D., Shaw, A., Mitrovic, I. Z., & Hall, S. (2014). Compositional tuning of atomic layer deposited MgZnO for thin film transistors. APPLIED PHYSICS LETTERS, 105(20). doi:10.1063/1.4902389Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement (Journal article)
Zhao, C., Zhao, C. Z., Lu, Q., Yan, X., Taylor, S., & Chalker, P. R. (2014). Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement. MATERIALS, 7(10), 6965-6981. doi:10.3390/ma7106965Review on Non-Volatile Memory with High-<i>k</i> Dielectrics: Flash for Generation Beyond 32 nm (Journal article)
Zhao, C., Zhao, C. Z., Taylor, S., & Chalker, P. R. (2014). Review on Non-Volatile Memory with High-<i>k</i> Dielectrics: Flash for Generation Beyond 32 nm. MATERIALS, 7(7), 5117-5145. doi:10.3390/ma7075117Physical and electrical characterization of Ce-HfO<sub>2</sub> thin films deposited by thermal atomic layer deposition (Journal article)
King, P. J., Sedghi, N., Hall, S., Mitrovic, I. Z., Chalker, P. R., Werner, M., & Hindley, S. (2014). Physical and electrical characterization of Ce-HfO<sub>2</sub> thin films deposited by thermal atomic layer deposition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 32(3). doi:10.1116/1.4826174(Invited) Interface Engineering Routes for a Future CMOS Ge-Based Technology (Journal article)
Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Sedghi, N., Hall, S., Dhanak, V. R., . . . Östling, M. (2014). (Invited) Interface Engineering Routes for a Future CMOS Ge-Based Technology. ECS Meeting Abstracts, MA2014-01(36), 1357. doi:10.1149/ma2014-01/36/1357Interface Engineering Routes for a Future CMOS Ge-based Technology (Journal article)
Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Sedghi, N., Hall, S., Dhanak, V. R., . . . Ostling, M. (2014). Interface Engineering Routes for a Future CMOS Ge-based Technology. DIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 61(2), 73-88. doi:10.1149/06102.0073ecstGe interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature (Journal article)
Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Dhanak, V. R., Linhart, W. M., Veal, T. D., . . . Dimoulas, A. (2014). Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature. Journal of Applied Physics, 115(11). doi:10.1063/1.4868091Energy Distribution of Positive Charges in Al2O3GeO2/Ge pMOSFETs (Journal article)
Ma, J., Zhang, J. F., Ji, Z., Benbakhti, B., Zhang, W., Mitard, J., . . . Chalker, P. R. (2014). Energy Distribution of Positive Charges in Al2O3GeO2/Ge pMOSFETs. IEEE Electron Device Letters, 35(2), 160-162. doi:10.1109/LED.2013.2295516Characterization of negative bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack (Journal article)
Ma, J., Zhang, J. F., Ji, Z., Benbakhti, B., Zhang, W., Zheng, X. F., . . . Chalker, P. R. (2014). Characterization of negative bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack. IEEE Transactions on Electron Devices, 61(5), 1307-1314. doi:10.1109/TED.2014.2314178Dielectric Relaxation in Lanthanide Doped/Based Oxides Used for High-<i>k</i> Layers (Conference Paper)
Zhao, C. Z., Taylor, S., Zhao, C., & Chalker, P. R. (n.d.). Dielectric Relaxation in Lanthanide Doped/Based Oxides Used for High-<i>k</i> Layers. In Advanced Materials Research Vol. 1024 (pp. 331-334). Trans Tech Publications, Ltd.. doi:10.4028/www.scientific.net/amr.1024.3312013
GaN-based radial heterostructure nanowires grown by MBE and ALD (Conference Paper)
Lari, L., Ross, I. M., Walther, T., Black, K., Cheze, C., Geelhaar, L., . . . Chalker, P. R. (2013). GaN-based radial heterostructure nanowires grown by MBE and ALD. In 18TH MICROSCOPY OF SEMICONDUCTING MATERIALS CONFERENCE (MSM XVIII) Vol. 471. doi:10.1088/1742-6596/471/1/012039Dielectric relaxation of high-<i>k</i> oxides (Journal article)
Zhao, C., Zhao, C. Z., Werner, M., Taylor, S., & Chalker, P. (2013). Dielectric relaxation of high-<i>k</i> oxides. NANOSCALE RESEARCH LETTERS, 8. doi:10.1186/1556-276X-8-456Impact of Cerium Oxide's Grain Size for Dielectric Relaxation (Conference Paper)
Zhao, C., Zhao, C. Z., Werner, M., Taylor, S., Chalker, P., & King, P. (2013). Impact of Cerium Oxide's Grain Size for Dielectric Relaxation. In PROCEEDINGS OF THE 2013 20TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2013) (pp. 57-60). Retrieved from https://www.webofscience.com/Radiation Response Analyzer of Semiconductor Dies (Conference Paper)
Mu, Y., Zhao, C., Su, S., Zhao, Y., Mitrovic, I., Taylor, S., & Chalker, P. (2013). Radiation Response Analyzer of Semiconductor Dies. In PROCEEDINGS OF THE 2013 20TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2013) (pp. 682-685). Retrieved from https://www.webofscience.com/Interface engineering of Ge using thulium oxide: Band line-up study (Journal article)
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Benbakhti, B., Zhang, J. F., Ji, Z., Zhang, W., Mitard, J., Kaczer, B., . . . Chalker, P. (2012). Characterization of Electron Traps in Si-Capped Ge MOSFETs With HfO<sub>2</sub>/SiO<sub>2</sub> Gate Stack. IEEE ELECTRON DEVICE LETTERS, 33(12), 1681-1683. doi:10.1109/LED.2012.2218565Atomic layer deposition of anatase TiO<sub>2</sub> coating on silica particles: growth, characterization and evaluation as photocatalysts for methyl orange degradation and hydrogen production (Journal article)
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Sedghi, N., King, P., Werner, M., Davey, W. M., Mitrovic, I., Chalker, P., . . . Hindley, S. (2012). 'Ce doped hafnium oxide on silicon'. In Semiconductor Interface Specialist Conference (pp. 2). San Diego: IEEE/SISC.Atomic Layer Deposition of Gallium-Doped Zinc Oxide Transparent Conducting Oxide films (Conference Paper)
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Ahmad, M., Luo, J. K., Purnawali, H., Huang, W. M., King, P. J., Chalker, P. R., . . . Geng, J. (2012). Making shape memory polymers reprocessable and reusable by a simple chemical method (vol 22, pg 8192, 2012). JOURNAL OF MATERIALS CHEMISTRY, 22(48), 25493. Retrieved from https://www.webofscience.com/Ternary Pt-Ru-SnO<sub>2</sub> hybrid architectures: unique carbon-mediated 1-D configuration and their electrocatalytic activity to methanol oxidation (vol 22, pg 7104, 2012) (Journal article)
Yang, S., Zhao, C., Ge, C., Dong, X., Liu, X., Liu, Y., . . . Li, Z. (2012). Ternary Pt-Ru-SnO<sub>2</sub> hybrid architectures: unique carbon-mediated 1-D configuration and their electrocatalytic activity to methanol oxidation (vol 22, pg 7104, 2012). JOURNAL OF MATERIALS CHEMISTRY, 22(48), 25489. Retrieved from https://www.webofscience.com/2011
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Lari, L., Walther, T., Gass, M. H., Geelhaar, L., Cheze, C., Riechert, H., . . . Chalker, P. R. (2011). Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN-AlGaN axial heterostructure nanowires. JOURNAL OF CRYSTAL GROWTH, 327(1), 27-34. doi:10.1016/j.jcrysgro.2011.06.004Properties of GaN Nanowires Grown by Molecular Beam Epitaxy (Journal article)
Geelhaar, L., Cheze, C., Jenichen, B., Brandt, O., Pfueller, C., Muench, S., . . . Riechert, H. (2011). Properties of GaN Nanowires Grown by Molecular Beam Epitaxy. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 17(4), 878-888. doi:10.1109/JSTQE.2010.2098396SrHf<sub>0.67</sub>Ti<sub>0.33</sub>O<sub>3</sub> high-k films deposited on Si by pulsed laser deposition (Journal article)
Yan, L., Xu, Z. L., Grygiel, C., McMitchell, S. R. C., Suchomel, M. R., Bacsa, J., . . . Rosseinsky, M. J. (2011). SrHf<sub>0.67</sub>Ti<sub>0.33</sub>O<sub>3</sub> high-k films deposited on Si by pulsed laser deposition. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 104(1), 447-451. doi:10.1007/s00339-011-6257-8SrHfO<sub>3</sub> Films Grown on Si(100) by Plasma-Assisted Atomic Layer Deposition (Journal article)
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Yan, L., Niu, H. J., Duong, G. V., Suchomel, M. R., Bacsa, J., Chalker, P. R., . . . Rosseinsky, M. J. (2011). Cation ordering within the perovskite block of a six-layer Ruddlesden-Popper oxide from layer-by-layer growth - artificial interfaces in complex unit cells. CHEMICAL SCIENCE, 2(2), 261-272. doi:10.1039/c0sc00482kEffect of deposition temperature on the properties of CeO<sub>2</sub> films grown by atomic layer deposition (Journal article)
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Ahmad, M., Luo, J., Xu, B., Purnawali, H., King, P. J., Chalker, P. R., . . . Miraftab, M. (2011). Synthesis and Characterization of Polyurethane-Based Shape-Memory Polymers for Tailored <i>T</i><sub>g</sub> around Body Temperature for Medical Applications. MACROMOLECULAR CHEMISTRY AND PHYSICS, 212(6), 592-602. doi:10.1002/macp.201000540MOCVD of Vertically Aligned ZnO Nanowires Using Bidentate Ether Adducts of Dimethylzinc (Journal article)
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Black, K., Jones, A. C., Bacsa, J., Chalker, P. R., Marshall, P. A., Davies, H. O., . . . Critchlow, G. W. (2010). Investigation of New 2,5-Dimethylpyrrolyl Titanium Alkylamide and Alkoxide Complexes as Precursors for the Liquid Injection MOCVD of TiO<sub>2</sub>. CHEMICAL VAPOR DEPOSITION, 16(1-3), 93-99. doi:10.1002/cvde.200906818A-Site Order Control in Mixed Conductor NdBaCo<sub>2</sub>O<sub>5+δ</sub> Films through Manipulation of Growth Kinetics (Journal article)
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Lari, L., Walther, T., Black, K., Murray, R. T., Bullough, T. J., Chalker, P. R., . . . Riechert, H. (2010). GaN, AlGaN, HfO<sub>2</sub> based radial heterostructure nanowires. 16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS, 209. doi:10.1088/1742-6596/209/1/012011Linear Ion Trap Fabricated Using Rapid Manufacturing Technology (Journal article)
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Lari, L., Walther, T., Black, K., Murray, R. T., Bullough, T. J., Chalker, P. R., . . . Riechert, H. (2010). 'GaN, AlGaN, HfO2 based radial heterostructure nanowires'. Journal of Physics: Conference Series, 209(1).2009
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Wrench, J. S., Black, K., Aspinall, H. C., Jones, A. C., Bacsa, J., Chalker, P. R., . . . Heys, P. N. (2009). MOCVD and ALD of CeO<sub>2</sub> Thin Films using a Novel Monomeric Ce<SUP>IV</SUP> Alkoxide Precursor. CHEMICAL VAPOR DEPOSITION, 15(10-12), 259-+. doi:10.1002/cvde.200904279Structural properties of wurtzitelike ScGaN films grown by NH<sub>3</sub>-molecular beam epitaxy (Journal article)
Moram, M. A., Zhang, Y., Joyce, T. B., Holec, D., Chalker, P. R., Mayrhofer, P. H., . . . Humphreys, C. J. (2009). Structural properties of wurtzitelike ScGaN films grown by NH<sub>3</sub>-molecular beam epitaxy. JOURNAL OF APPLIED PHYSICS, 106(11). doi:10.1063/1.3268466High-k dielectrics' radiation response to X-ray and &#x03B3;-ray exposure (Conference Paper)
Zhao, C. Z., Werner, M., Taylor, S., Chalker, P. R., Potter, R. J., & Gaskell, J. (2009). High-k dielectrics' radiation response to X-ray and &#x03B3;-ray exposure. In 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits. IEEE. doi:10.1109/ipfa.2009.5232565Permittivity enhancement and dielectric relaxation of doped hafnium and zirconium oxide (Journal article)
Werner, M., Zhao, C. Z., Taylor, S., Chalker, P. R., Black, K., & Gaskell, J. (2009). Permittivity enhancement and dielectric relaxation of doped hafnium and zirconium oxide. 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits. doi:10.1109/ipfa.2009.5232568Deposition of TiO<sub>2</sub> Films by Liquid Injection ALD Using New Titanium 2,5-dimethylpyrrolyl Complexes (Journal article)
Davies, H. O., Jones, A. C., Black, K., Bacsa, J., Chalker, P. R., Marshall, P. A., . . . O'Brien, P. (2009). Deposition of TiO<sub>2</sub> Films by Liquid Injection ALD Using New Titanium 2,5-dimethylpyrrolyl Complexes. EUROCVD 17 / CVD 17, 25(8), 813-819. doi:10.1149/1.3207671Deposition of TiO<sub>2</sub> Thin Films by Liquid Injection ALD Using New 2,5-Dimethylpyrrolyl Titanium-Alkylamide and -Alkoxide Precursors (Journal article)
Davies, H., Black, K., Jones, A., Bacsa, J., Chalker, P., Marshall, P. A., . . . Afzaal, M. (2009). Deposition of TiO<sub>2</sub> Thin Films by Liquid Injection ALD Using New 2,5-Dimethylpyrrolyl Titanium-Alkylamide and -Alkoxide Precursors. ECS Meeting Abstracts, MA2009-02(34), 2588. doi:10.1149/ma2009-02/34/2588Development of Quadrupole Mass Spectrometers Using Rapid Prototyping Technology (Journal article)
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Gottlob, H. D. B., Schmidt, M., Stefani, A., Lemme, M. C., Kurz, H., Mitrovic, I. Z., . . . Newcomb, S. B. (2009). Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics. MICROELECTRONIC ENGINEERING, 86(7-9), 1642-1645. doi:10.1016/j.mee.2009.03.084High permittivity SrHf<sub>0.5</sub>Ti<sub>0.5</sub>O<sub>3</sub> films grown by pulsed laser deposition (Journal article)
Yan, L., Suchomel, M. R., Grygiel, C., Niu, H. J., McMitchell, S. R. C., Bacsa, J., . . . Rosseinsky, M. J. (2009). High permittivity SrHf<sub>0.5</sub>Ti<sub>0.5</sub>O<sub>3</sub> films grown by pulsed laser deposition. APPLIED PHYSICS LETTERS, 94(23). doi:10.1063/1.3151815Dielectric relaxation of lanthanum doped zirconium oxide (Journal article)
Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Murray, R. T., Gaskell, J. M., & Jones, A. C. (2009). Dielectric relaxation of lanthanum doped zirconium oxide. JOURNAL OF APPLIED PHYSICS, 105(4). doi:10.1063/1.3078038Chapter 8. Chemical Vapour Deposition of Metal Oxides for Microelectronics Applications (Chapter)
Jones, A. C., Aspinall, H. C., & Chalker, P. R. (2009). Chapter 8. Chemical Vapour Deposition of Metal Oxides for Microelectronics Applications. In L. M. Hitchman, & A. C. Jones (Eds.), Chemical Vapour Deposition: Precursors and Processes (pp. 357-412). London: Royal Society of Chemistry.Customised layer deposition for chemical reactor applications (Conference Paper)
Singh, J., Hauser, C., Chalker, P. R., Sutcliffe, C. J., Clare, A. T., & Dunschen, M. (2009). Customised layer deposition for chemical reactor applications. In 20th Annual International Solid Freeform Fabrication Symposium, SFF 2009 (pp. 819-830).Frequency dispersion and dielectric relaxation of La<sub>2</sub>Hf<sub>2</sub>O<sub>7</sub> (Journal article)
Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Gaskell, J. M., & Jones, A. C. (2009). Frequency dispersion and dielectric relaxation of La<sub>2</sub>Hf<sub>2</sub>O<sub>7</sub>. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(1), 333-337. doi:10.1116/1.3043535Gd silicate: A high-<i>k</i> dielectric compatible with high temperature annealing (Journal article)
Gottlob, H. D. B., Stefani, A., Schmidt, M., Lemme, M. C., Kurz, H., Mitrovic, I. Z., . . . Newcomb, S. B. (2009). Gd silicate: A high-<i>k</i> dielectric compatible with high temperature annealing. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(1), 249-252. doi:10.1116/1.3025904High-<i>k</i> materials and their response to gamma ray radiation (Journal article)
Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Potter, R. J., Gaskell, J. M., & Jones, A. C. (2009). High-<i>k</i> materials and their response to gamma ray radiation. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(1), 411-415. doi:10.1116/1.3071848MOCVD and ALD of CeO2 Thin Films using a Novel Monomeric CeIV Alkoxide Precursor (Journal article)
Wrench, J. S., Black, K., Aspinall, H. C., Jones, A. C., Bacsa, J., Chalker, P. R., . . . Heys, P. N. (2009). MOCVD and ALD of CeO2 Thin Films using a Novel Monomeric CeIV Alkoxide Precursor. Chemical Vapour Deposition, 15, 1-3.Rapid prototyping methodologies for ceramic micro components (Conference Paper)
Chalker, P. R., Berggreen, K. M., Clare, A. T., Singh, J., & Sutcliffe, C. J. (2009). Rapid prototyping methodologies for ceramic micro components. In SMART MATERIALS FOR SMART DEVICES AND STRUCTURES Vol. 154 (pp. 1-7). doi:10.4028/www.scientific.net/SSP.154.12008
Permittivity enhancement of hafnium dioxide high-κ films by cerium doping (Journal article)
Chalker, P. R., Werner, M., Romani, S., Potter, R. J., Black, K., Aspinall, H. C., . . . Heys, P. N. (2008). Permittivity enhancement of hafnium dioxide high-κ films by cerium doping. APPLIED PHYSICS LETTERS, 93(18). doi:10.1063/1.3023059Defect characterization and analysis of III-V nanowires grown by Ni-promoted MBE (Journal article)
Lari, L., Murray, R. T., Gass, M. H., Bullough, T. J., Chalker, P. R., Kioseoglou, J., . . . Riechert, H. (2008). Defect characterization and analysis of III-V nanowires grown by Ni-promoted MBE. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 205(11), 2589-2592. doi:10.1002/pssa.200780132Annealing of neodymium aluminate high-κ dielectric deposited by liquid injection MOCVD using single source heterometallic alkoxide precursor (Conference Paper)
Taechakumput, P., Ce, Z. Z., Taylor, S., Werner, M., Pham, N., Chalker, P. R., . . . Jones, A. C. (2008). Annealing of neodymium aluminate high-κ dielectric deposited by liquid injection MOCVD using single source heterometallic alkoxide precursor. In Proceedings - Electrochemical Society Vol. PV 2008-1 (pp. 322-326).High-k materials and their response to X-ray radiation (Conference Paper)
Zhao, C. Z., Taylor, S., Taechakumput, P., Werner, M., Chalker, P. R., Huang, X. L., . . . Jones, A. C. (2008). High-k materials and their response to X-ray radiation. In Proceedings - Electrochemical Society Vol. PV 2008-1 (pp. 27-32).Origin of frequency dispersion in high-k dielectrics (Conference Paper)
Taechakumput, P., Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Gaskell, J. M., . . . Drobnis, M. (2008). Origin of frequency dispersion in high-k dielectrics. In Proceedings - Electrochemical Society Vol. PV 2008-1 (pp. 20-26).Deposition of ZrO<sub>2</sub> and HfO<sub>2</sub> thin films by liquid injection MOCVD and ALD using <i>ansa</i>-metallocene zirconium and hafnium precursors (Journal article)
Black, K., Aspinall, H. C., Jones, A. C., Przybylak, K., Bacsa, J., Chalker, P. R., . . . Heys, P. N. (2008). Deposition of ZrO<sub>2</sub> and HfO<sub>2</sub> thin films by liquid injection MOCVD and ALD using <i>ansa</i>-metallocene zirconium and hafnium precursors. JOURNAL OF MATERIALS CHEMISTRY, 18(38), 4561-4571. doi:10.1039/b807205aAberration corrected STEM of defects in epitaxial n=4 Ruddlesden-Popper phase Ca<sub>n+1</sub>Mn<sub>n</sub>O<sub>3n+1</sub> (Journal article)
Wang, P., Bleloch, A. L., Yan, L., Niu, H. J., Chalker, P. R., Rosseinsky, M. J., & Goodhew, P. J. (2008). Aberration corrected STEM of defects in epitaxial n=4 Ruddlesden-Popper phase Ca<sub>n+1</sub>Mn<sub>n</sub>O<sub>3n+1</sub>. EMAG: ELECTRON MICROSCOPY AND ANALYSIS GROUP CONFERENCE 2007, 126. doi:10.1088/1742-6596/126/1/012050Nanoscale EELS and EDX Analyses of GaN Nanowires and GaN/AlGaN Radial Heterostructure Nanowires (Journal article)
Lari, L., Murray, R. T., Gass, M. H., Bullough, T., Chalker, P. R., Chèze, C., . . . Riechert, H. (2008). Nanoscale EELS and EDX Analyses of GaN Nanowires and GaN/AlGaN Radial Heterostructure Nanowires. Microscopy and Microanalysis, 14(S2), 1394-1395. doi:10.1017/s1431927608082809Selective laser melting of high aspect ratio 3D nickel–titanium structures two way trained for MEMS applications (Journal article)
Clare, A. T., Chalker, P. R., Davies, S., Sutcliffe, C. J., & Tsopanos, S. (2008). Selective laser melting of high aspect ratio 3D nickel–titanium structures two way trained for MEMS applications. International Journal of Mechanics and Materials in Design, 4(2), 181-187. doi:10.1007/s10999-007-9032-4Nanoscale compositional analysis of Ni-based seed crystallites associated with GaN nanowire growth (Journal article)
Lari, L., Murray, R. T., Bullough, T. J., Chalker, P. R., Gass, M., Cheze, C., . . . Riechert, H. (2008). Nanoscale compositional analysis of Ni-based seed crystallites associated with GaN nanowire growth. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 40(7), 2457-2461. doi:10.1016/j.physe.2007.10.003Selective laser sintering of barium titanate-polymer composite films (Journal article)
Clare, A. T., Chalker, P. R., Davies, S., Sutcliffe, C. J., & Tsopanos, S. (2008). Selective laser sintering of barium titanate-polymer composite films. JOURNAL OF MATERIALS SCIENCE, 43(9), 3197-3202. doi:10.1007/s10853-007-2396-xMOCVD of ZnO thin films for potential use as compliant layers for GaN on Si (Journal article)
Black, K., Jones, A. C., Chalker, P. R., Gaskell, J. M., Murray, R. T., Joyce, T. B., & Rushworth, S. A. (2008). MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si. JOURNAL OF CRYSTAL GROWTH, 310(5), 1010-1014. doi:10.1016/j.jcrysgro.2007.11.131ChemInform Abstract: Deposition of Lanthanum Zirconium Oxide High‐k Films by Liquid Injection ALD and MOCVD. (Journal article)
Gaskell, J. M., Jones, A. C., Chalker, P. R., Werner, M., Aspinall, H. C., Taylor, S., . . . Heys, P. N. (2008). ChemInform Abstract: Deposition of Lanthanum Zirconium Oxide High‐k Films by Liquid Injection ALD and MOCVD.. ChemInform, 39(9). doi:10.1002/chin.200809016ChemInform Abstract: Growth of HfO<sub>2</sub> by Liquid Injection MOCVD and ALD Using New Hafnium‐Cyclopentadienyl Precursors. (Journal article)
O'Kane, R., Gaskell, J., Jones, A. C., Chalker, P. R., Black, K., Werner, M., . . . Odedra, R. (2008). ChemInform Abstract: Growth of HfO<sub>2</sub> by Liquid Injection MOCVD and ALD Using New Hafnium‐Cyclopentadienyl Precursors.. ChemInform, 39(7). doi:10.1002/chin.200807212'Annealing Effect on Neodymium Aluminates high-k dielectric deposited by Liquid Injection MOCVD using single source Heterometallic Alkoxide precursors' (Conference Paper)
Taechakumput, P., Zhao, C. Z., Taylor, S., Werner, M., Pham, N., Chalker, P. R., . . . Jones, A. C. (2008). 'Annealing Effect on Neodymium Aluminates high-k dielectric deposited by Liquid Injection MOCVD using single source Heterometallic Alkoxide precursors'. In ISTC2008 (pp. 324-326). Shanghai: ECS.'Effects of annealing ambient on dielectric relaxation of La doped ZrO2' (Conference Paper)
Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Gaskell, J. M., & Jones, A. C. (2008). 'Effects of annealing ambient on dielectric relaxation of La doped ZrO2'. In WODIM 2008 (pp. 235-236). Berlin: AVS.'Frequency Dispersion and Dielectric Relaxation of La0.5Hf0.5O2' (Conference Paper)
Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Gaskell, J. M., & Jones, A. C. (2008). 'Frequency Dispersion and Dielectric Relaxation of La0.5Hf0.5O2'. In WODIM 2008 (pp. 237-238). Berlin: AVS.'High-k Materials and Their Response to Gamma Ray Radiation', (Conference Paper)
Zhao, C. Z., Taylor, S., Werner, M., Chalker, P. R., Potter, R. J., Gaskell, J. M., & Jones, A. C. (2008). 'High-k Materials and Their Response to Gamma Ray Radiation',. In WODIM 2008, (pp. 5-6). Berlin,: AVS.Chapter 8 (Chapter)
Jones, A. C., Aspinall, H. C., & Chalker, P. R. (2008). Chapter 8. In Chemical Vapour Deposition (pp. 357-412). Royal Society of Chemistry (RSC). doi:10.1039/9781847558794-00357Chemical Vapour Deposition of Metal Oxides for Microelectronics Applications (Chapter)
Jones, A. C., Aspinall, H. C., & Chalker, P. R. (2008). Chemical Vapour Deposition of Metal Oxides for Microelectronics Applications. In CHEMICAL VAPOUR DEPOSITION: PRECURSORS, PROCESSES AND APPLICATIONS (pp. 357-412). doi:10.1039/9781847558794-00357EDX and linescan modelling for core/shell GaN/AlGaN nanowire analysis (Chapter)
Lari, L., Murray, R. T., Bullough, T., Chalker, P. R., Chèze, C., Geelhaar, L., & Riechert, H. (n.d.). EDX and linescan modelling for core/shell GaN/AlGaN nanowire analysis. In EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany (pp. 143-144). Springer Berlin Heidelberg. doi:10.1007/978-3-540-85226-1_72Electron Microscopy Analysis of AlGaN/GaN Nanowires Grown by Catalyst-Assisted Molecular Beam Epitaxy (Journal article)
Lari, L., Murray, R. T., Gass, M., Bullough, T. J., Chalker, P. R., Cheze, C., . . . Riechert, H. (2008). Electron Microscopy Analysis of AlGaN/GaN Nanowires Grown by Catalyst-Assisted Molecular Beam Epitaxy. MICROSCOPY OF SEMICONDUCTING MATERIALS 2007, 120, 221-+. Retrieved from https://www.webofscience.com/2007
Deposition of Lanthanum Zirconium Oxide High-<i>k</i> Films by Liquid Injection ALD and MOCVD (Journal article)
Gaskell, J. M., Jones, A. C., Chalker, P. R., Werner, M., Aspinall, H. C., Taylor, S., . . . Heys, P. N. (2007). Deposition of Lanthanum Zirconium Oxide High-<i>k</i> Films by Liquid Injection ALD and MOCVD. CHEMICAL VAPOR DEPOSITION, 13(12), 684-690. doi:10.1002/cvde.200706637Growth of HfO<sub>2</sub> by Liquid Injection MOCVD and ALD Using New Hafnium‐Cyclopentadienyl Precursors (Journal article)
O'Kane, R., Gaskell, J., Jones, A. C., Chalker, P. R., Black, K., Werner, M., . . . Odedra, R. (2007). Growth of HfO<sub>2</sub> by Liquid Injection MOCVD and ALD Using New Hafnium‐Cyclopentadienyl Precursors. Chemical Vapor Deposition, 13(11), 609-617. doi:10.1002/cvde.200706589Growth of HfO<sub>2</sub> by liquid injection MOCVD and ALD using new hafnium-cyclopentadienyl precursors (Journal article)
O'Kane, R., Gaskell, J., Jones, A. C., Chalker, P. R., Black, K., Werner, M., . . . Odedra, R. (2007). Growth of HfO<sub>2</sub> by liquid injection MOCVD and ALD using new hafnium-cyclopentadienyl precursors. CHEMICAL VAPOR DEPOSITION, 13(11), 609-617. doi:10.1002/cvde.200706589Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer (Journal article)
Moram, M. A., Kappers, M. J., Joyce, T. B., Chalker, P. R., Barber, Z. H., & Humphreys, C. J. (2007). Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer. JOURNAL OF CRYSTAL GROWTH, 308(2), 302-308. doi:10.1016/j.jcrysgro.2007.09.009Liquid injection MOCVD and ALD of ZrO<sub>2</sub> using zr-cyclopentadienyl precursors (Journal article)
Gaskell, J. M., Jones, A. C., Black, K., Chalker, P. R., Leese, T., Kingsley, A., . . . Heys, P. N. (2007). Liquid injection MOCVD and ALD of ZrO<sub>2</sub> using zr-cyclopentadienyl precursors. SURFACE & COATINGS TECHNOLOGY, 201(22-23), 9095-9098. doi:10.1016/j.surfcoat.2007.04.098Molecular design of improved precursors for the MOCVD of oxides used in microelectronics (Journal article)
Jones, A. C., Aspinall, H. C., & Chalker, P. R. (2007). Molecular design of improved precursors for the MOCVD of oxides used in microelectronics. SURFACE & COATINGS TECHNOLOGY, 201(22-23), 9046-9054. doi:10.1016/j.surfcoat.2007.04.118Deposition of lanthanum zirconium oxide high-κ films by liquid injection atomic layer deposition (Journal article)
Gaskell, J. M., Jones, A. C., Aspinall, H. C., Taylor, S., Taechakumput, P., Chalker, P. R., . . . Odedra, R. (2007). Deposition of lanthanum zirconium oxide high-κ films by liquid injection atomic layer deposition. APPLIED PHYSICS LETTERS, 91(11). doi:10.1063/1.2784956Deposition of Pr- and Nd-aluminate by liquid injection MOCVD and ALD using single-source heterometallic alkoxide precursors (Journal article)
Gaskell, J. M., Przybylak, S., Jones, A. C., Aspinall, H. C., Chalker, P. R., Black, K., . . . Taylor, S. (2007). Deposition of Pr- and Nd-aluminate by liquid injection MOCVD and ALD using single-source heterometallic alkoxide precursors. CHEMISTRY OF MATERIALS, 19(19), 4796-4803. doi:10.1021/cm0707556Unit‐Cell‐Level Assembly of Metastable Transition‐Metal Oxides by Pulsed‐Laser Deposition. (Journal article)
Yan, L., Niu, H., Bridges, C. A., Marshall, P. A., Hadermann, J., van Tendeloo, G., . . . Rosseinsky, M. J. (2007). Unit‐Cell‐Level Assembly of Metastable Transition‐Metal Oxides by Pulsed‐Laser Deposition.. ChemInform, 38(34). doi:10.1002/chin.200734221Precursors for MOCVD and ALD of rare earth oxides-complexes of the early lanthanides with a donor-functionalized alkoxide ligand (Journal article)
Aspinall, H. C., Bickley, J. F., Gaskell, J. M., Jones, A. C., Labat, G., Chalker, P. R., & Williams, P. A. (2007). Precursors for MOCVD and ALD of rare earth oxides-complexes of the early lanthanides with a donor-functionalized alkoxide ligand. INORGANIC CHEMISTRY, 46(15), 5852-5860. doi:10.1021/ic061382yUnit-cell-level assembly of metastable transition-metal oxides by pulsed-laser deposition (Journal article)
Yan, L., Niu, H., Bridges, C. A., Marshall, P. A., Hadermann, J., van Tendeloo, G., . . . Rosseinsky, M. J. (2007). Unit-cell-level assembly of metastable transition-metal oxides by pulsed-laser deposition. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 46(24), 4539-4542. doi:10.1002/anie.200700119Unit‐Cell‐Level Assembly of Metastable Transition‐Metal Oxides by Pulsed‐Laser Deposition (Journal article)
Yan, L., Niu, H., Bridges, C. A., Marshall, P. A., Hadermann, J., van Tendeloo, G., . . . Rosseinsky, M. J. (2007). Unit‐Cell‐Level Assembly of Metastable Transition‐Metal Oxides by Pulsed‐Laser Deposition. Angewandte Chemie, 119(24), 4623-4626. doi:10.1002/ange.200700119Charge trapping and interface states in hydrogen annealed HfO<sub>2</sub>-Si structures (Journal article)
Gomeniuk, Y. V., Nazarov, A. N., Vovk, Y. N., Lysenko, V. S., Lu, Y., Buiu, O., . . . Chalker, P. (2007). Charge trapping and interface states in hydrogen annealed HfO<sub>2</sub>-Si structures. MICROELECTRONICS RELIABILITY, 47(4-5), 714-717. doi:10.1016/j.microrel.2007.01.025Charge trapping characterization of MOCVD HfO<sub>2</sub>/p-Si interfaces at cryogenic temperatures (Journal article)
Tyagulskyy, I. P., Osiyuk, I. N., Lysenko, V. S., Nazarov, A. N., Hall, S., Buiu, O., . . . Chalker, P. (2007). Charge trapping characterization of MOCVD HfO<sub>2</sub>/p-Si interfaces at cryogenic temperatures. MICROELECTRONICS RELIABILITY, 47(4-5), 726-728. doi:10.1016/j.microrel.2007.01.074Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition (Journal article)
Taechakumput, P., Taylor, S., Buiu, O., Potter, R. J., Chalker, P. R., & Jones, A. C. (2007). Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition. MICROELECTRONICS RELIABILITY, 47(4-5), 825-829. doi:10.1016/j.microrel.2007.01.049Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition (Journal article)
Lu, Y., Buiu, O., Hall, S., Mitrovic, I. Z., Davey, W., Potter, R. J., & Chalker, P. R. (2007). Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition. MICROELECTRONICS RELIABILITY, 47(4-5), 722-725. doi:10.1016/j.microrel.2007.01.052Investigation of optical and electronic properties of hafnium aluminate films deposited by Metal-Organic Chemical Vapour Deposition (Journal article)
Buiu, O., Lu, Y., Hall, S., Mitrovic, I. Z., Potter, R. J., & Chalker, P. R. (2007). Investigation of optical and electronic properties of hafnium aluminate films deposited by Metal-Organic Chemical Vapour Deposition. THIN SOLID FILMS, 515(7-8), 3772-3778. doi:10.1016/j.tsf.2006.09.035Photochemistry of refractive index structures in poly(methyl methacrylate) by femtosecond laser irradiation (Journal article)
Baum, A., Scully, P. J., Basanta, M., Thomas, C. L. P., Fielden, P. R., Goddard, N. J., . . . Chalker, P. R. (2007). Photochemistry of refractive index structures in poly(methyl methacrylate) by femtosecond laser irradiation. OPTICS LETTERS, 32(2), 190-192. doi:10.1364/OL.32.000190'Optimization of low temperature ALD gadolinium oxide films for gate dielectric stack applications' (Conference Paper)
Buiu, O., Werner, M., Davey, W. M., Lu, Y., Hall, S., & Chalker, P. (2007). 'Optimization of low temperature ALD gadolinium oxide films for gate dielectric stack applications'. In International Conference on Spectroellipsometry (pp. xx). Marseilles: xx.Deposition of lanthanum zirconium oxide high-kappa films by liquid injection atomic layer deposition (Journal article)
Gaskell, J. M., Jones, A. C., Aspinall, H. C., Taylor, S., Taechakumput, P., Chalker, P. R., . . . Odedra, R. (2007). Deposition of lanthanum zirconium oxide high-kappa films by liquid injection atomic layer deposition. Applied Physics Letters, 91(11), 112912.Quantitative EELS Analysis of AlGaN Nanowires Grown by Ni Promoted MBE on Sapphire Substrate (Journal article)
Lari, L., Murray, R. T., Gass, M. H., Bullough, T. J., Chalker, P. R., Chèze, C., . . . Riechert, H. (2007). Quantitative EELS Analysis of AlGaN Nanowires Grown by Ni Promoted MBE on Sapphire Substrate. MRS Proceedings, 1026. doi:10.1557/proc-1026-c01-052006
Selective Laser Melting (Patent)
Sutcliffe, C., Fox, P., & Chalker, P. (2006). Selective Laser Melting.Transition from electron accumulation to depletion at InGaN surfaces (Journal article)
Veal, T. D., Jefferson, P. H., Piper, L. F. J., McConville, C. F., Joyce, T. B., Chalker, P. R., . . . Schaff, W. J. (2006). Transition from electron accumulation to depletion at InGaN surfaces. APPLIED PHYSICS LETTERS, 89(20). doi:10.1063/1.2387976Spectroellipsometric assessment of HfO<sub>2</sub> thin films (Journal article)
Buiu, O., Lu, Y., Mitrovic, I. Z., Hall, S., Chalker, P., & Potter, R. J. (2006). Spectroellipsometric assessment of HfO<sub>2</sub> thin films. THIN SOLID FILMS, 515(2), 623-626. doi:10.1016/j.tsf.2005.12.215Microstructure of epitaxial scandium nitride films grown on silicon (Journal article)
Moram, M. A., Joyce, T. B., Chalker, P. R., Barber, Z. H., & Humphreys, C. J. (2006). Microstructure of epitaxial scandium nitride films grown on silicon. APPLIED SURFACE SCIENCE, 252(24), 8385-8387. doi:10.1016/j.apsusc.2005.11.069Liquid injection ALD and MOCVD of lanthanum aluminate using a bimetallic alkoxide precursor (Journal article)
Gaskell, J. M., Jones, A. C., Aspinall, H. C., Przybylak, S., Chalker, P. R., Black, K., . . . Critchlow, G. W. (2006). Liquid injection ALD and MOCVD of lanthanum aluminate using a bimetallic alkoxide precursor. JOURNAL OF MATERIALS CHEMISTRY, 16(39), 3854-3860. doi:10.1039/b609129fYoung's modulus, Poisson's ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon (Journal article)
Moram, M. A., Barber, Z. H., Humphreys, C. J., Joyce, T. B., & Chalker, P. R. (2006). Young's modulus, Poisson's ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon. JOURNAL OF APPLIED PHYSICS, 100(2). doi:10.1063/1.2217106Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes (Journal article)
Lu, Y., Buiu, O., Mitrovic, I., Hall, S., Chalker, P. R., Potter, R., . . . Vovk, Y. (2006). Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes. ECS Transactions, 1(5), 517-528. doi:10.1149/1.2209301MOCVD and ALD of High‐ϰ Dielectric Oxides Using Alkoxide Precursors (Journal article)
Jones, A. C., Aspinall, H. C., Chalker, P. R., Potter, R. J., Manning, T. D., Loo, Y. F., . . . Smith, L. M. (2006). MOCVD and ALD of High‐ϰ Dielectric Oxides Using Alkoxide Precursors. ChemInform, 37(21). doi:10.1002/chin.200621220Materials Research Society Symposium Proceedings: Preface (Conference Paper)
Bull, S. J., Chalker, P. R., Chen, S. C., Meng, W. J., & Maboudian, R. (2006). Materials Research Society Symposium Proceedings: Preface. In Materials Research Society Symposium Proceedings Vol. 890.Microstructure and strain-free lattice parameters of Sc<sub>x</sub>Ga<sub>1-x</sub>N films (Conference Paper)
Moram, M. A., Joyce, T. B., Chalker, P. R., Barber, Z. H., & Humphreys, C. J. (2006). Microstructure and strain-free lattice parameters of Sc<sub>x</sub>Ga<sub>1-x</sub>N films. In GaN, AIN, InN and Related Materials Vol. 892 (pp. 723-727). Retrieved from https://www.webofscience.com/Selective laser melting of high aspect ratio 3D nickel-titanium structures for MEMS applications. (Journal article)
Chalker, P. R., Clare, A., Davies, S., Sutcliffe, C. J., & Tsopanos, S. (2006). Selective laser melting of high aspect ratio 3D nickel-titanium structures for MEMS applications.. SURFACE ENGINEERING FOR MANUFACTURING APPLICATIONS, 890, 93-+. Retrieved from https://www.webofscience.com/Structural and electrical characterization of amorphous lanthanum hafnium oxide thin films (Journal article)
Loo, Y. F., Taylor, S., Murray, R. T., Jones, A. C., & Chalker, P. R. (2006). Structural and electrical characterization of amorphous lanthanum hafnium oxide thin films. JOURNAL OF APPLIED PHYSICS, 99(10). doi:10.1063/1.2198936MOCVD and ALD of high-<i>κ</i> dielectric oxides using alkoxide precursors (Journal article)
Jones, A. C., Aspinall, H. C., Chalker, P. R., Potter, R. J., Manning, T. D., Loo, Y. F., . . . Smith, L. M. (2006). MOCVD and ALD of high-<i>κ</i> dielectric oxides using alkoxide precursors. CHEMICAL VAPOR DEPOSITION, 12(2-3), 83-98. doi:10.1002/cvde.200500023Mapping the effective mass of electrons in III-V semiconductor quantum confined structures (Journal article)
Gass, M. H., Papworth, A. J., Beanland, R., Bullough, T. J., & Chalker, P. R. (2006). Mapping the effective mass of electrons in III-V semiconductor quantum confined structures. PHYSICAL REVIEW B, 73(3). doi:10.1103/PhysRevB.73.035312Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes (Journal article)
Lu, Y., Buiu, O., Mitrovic, I., Hall, S., Chalker, P., Potter, R., . . . Lysenko, V. (2006). Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes. ECS Meeting Abstracts, MA2005-02(13), 537. doi:10.1149/ma2005-02/13/537'Charge Trapping Characterization of the HfO2/p-Si Interfaces at Cryogenic Temperatures' (Conference Paper)
Tyagulskyy, I. P., Osiyuk, I. N., Lysenko, V. S., Nazarov, A. N., Hall, S., Buiu, O., . . . Lashkaryov, V. E. (2006). 'Charge Trapping Characterization of the HfO2/p-Si Interfaces at Cryogenic Temperatures'. In S. Lombardo (Ed.), 14th Workshop on Dielectric in Microelectronics (pp. 174-175). Santa Tecla - Catania: CNR - Italy.'Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition' (Conference Paper)
Lu, Y., Buiu, O., Mitrovic, I. Z., Hall, S., Potter, R. J., & Chalker, P. (2006). 'Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition'. In 14th Workshop on Dielectric in Microelectronics (pp. 188-189). Santa Tecla - Catania: CNR - Italy.Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition (LI - ALD) (Conference Paper)
Taechakumput, P., Taylor, S., Buiu, O., Ram, D. L., Potter, R. J., Chalker, P. R., & Jones, A. C. (2006). Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition (LI - ALD). In S. Lombardo (Ed.), 14th Workshop on Dielectric in Microelectronics (pp. 176-177). Santa Tecla - Catania: CNR - Italy.Refractive Index Structures in Poly(methyl methacrylate) and Polymer Optical Fibre by Femtosecond Laser Irradiation (Conference Paper)
Baum, A., Perrie, W., Scully, P. J., Basanta, M., Thomas, C. L., Goddard, N. J., . . . Chalker, P. (2006). Refractive Index Structures in Poly(methyl methacrylate) and Polymer Optical Fibre by Femtosecond Laser Irradiation. In Optical Fiber Sensors. OSA. doi:10.1364/ofs.2006.tue25Refractive index structures in poly(methyl methacrylate) and polymer optical fibre by femtosecond laser irradiation (Conference Paper)
Baum, A., Perrie, W., Scully, P. J., Basanta, M., Thomas, C. L. P., Goddard, N. J., . . . Chalker, P. R. (2006). Refractive index structures in poly(methyl methacrylate) and polymer optical fibre by femtosecond laser irradiation. In Optics InfoBase Conference Papers.Structural and electrical characterization of amorphous lanthanum hafnium oxide thin films (Journal article)
Loo, Y. F., Taylor, S., Murray, R. T., Jones, A. C., & Chalker, P. R. (2006). Structural and electrical characterization of amorphous lanthanum hafnium oxide thin films. Journal of Applied Physics, 99(103074), 103704.2005
A superlattice approach to the synthesis of strontium bismuth tantalate thin films using liquid-injection-MOCVD (Conference Paper)
Potter, R. J., Awad, A., Chalker, P. R., Peng, W., Jones, A. C., Noakes, T. C. Q., & Bailey, P. (2005). A superlattice approach to the synthesis of strontium bismuth tantalate thin films using liquid-injection-MOCVD. In Materials Research Society Symposium Proceedings Vol. 902 (pp. 1-6).Microstructure and Strain-Free Lattice Parameters of SCxGa1-xN Films (Journal article)
Moram, M. A., Joyce, T. B., Chalker, P. R., Barber, Z. H., & Humphreys, C. J. (2005). Microstructure and Strain-Free Lattice Parameters of SCxGa1-xN Films. MRS Online Proceedings Library, 892(1). doi:10.1557/proc-0892-ff28-07Deposition of LaAlO<sub>3</sub> films by liquid injection MOCVD using a new [La-Al] single source alkoxide precursor (Journal article)
Manning, T. D., Loo, Y. F., Jones, A. C., Aspinall, H. C., Chalker, P. R., Bickley, J. F., . . . Critchlow, G. W. (2005). Deposition of LaAlO<sub>3</sub> films by liquid injection MOCVD using a new [La-Al] single source alkoxide precursor. JOURNAL OF MATERIALS CHEMISTRY, 15(33), 3384-3387. doi:10.1039/b507004jDeposition of HfO<sub>2</sub> films by liquid injection MOCVD using a new monomeric alkoxide precursor, [Hf(dmop)<sub>4</sub>] (Journal article)
Loo, Y. F., O'Kane, R., Jones, A. C., Aspinall, H. C., Potter, R. J., Chalker, P. R., . . . Smith, L. M. (2005). Deposition of HfO<sub>2</sub> films by liquid injection MOCVD using a new monomeric alkoxide precursor, [Hf(dmop)<sub>4</sub>]. CHEMICAL VAPOR DEPOSITION, 11(6-7), 299-305. doi:10.1002/cvde.200506384Deposition of HfO<sub>2</sub> and ZrO<sub>2</sub> films by liquid injection MOCVD using new monomeric alkoxide precursors (Journal article)
Loo, Y. F., O'Kane, R., Jones, A. C., Aspinall, H. C., Potter, R. J., Chalker, P. R., . . . Smith, L. M. (2005). Deposition of HfO<sub>2</sub> and ZrO<sub>2</sub> films by liquid injection MOCVD using new monomeric alkoxide precursors. JOURNAL OF MATERIALS CHEMISTRY, 15(19), 1896-1902. doi:10.1039/b417389aRecent developments in the MOCVD and ALD of rare earth oxides and silicates (Journal article)
Jones, A. C., Aspinall, H. C., Chalker, P. R., Potter, R. J., Kukli, K., Rahtu, A., . . . Leskelä, M. (2005). Recent developments in the MOCVD and ALD of rare earth oxides and silicates. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 118(1-3), 97-104. doi:10.1016/j.mseb.2004.12.081Atomic vapour deposition (AVD) of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> using an all alkoxide precursor system (vol 272, pg 778, 2004) (Journal article)
Chalker, P. R., Potter, R. J., Roberts, J. L., Jones, A. C., Smith, L. M., & Schumacher, M. (2005). Atomic vapour deposition (AVD) of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> using an all alkoxide precursor system (vol 272, pg 778, 2004). JOURNAL OF CRYSTAL GROWTH, 276(1-2), 333. doi:10.1016/j.jcrysgro.2005.01.093Deposition of HfO<sub>2</sub>, Gd<sub>2</sub>O<sub>3</sub> and PrO<i><sub>x</sub></i> by liquid injection ALD techniques (Journal article)
Potter, R. J., Chalker, P. R., Manning, T. D., Aspinall, H. C., Loo, Y. F., Jones, A. C., . . . Schumacher, M. (2005). Deposition of HfO<sub>2</sub>, Gd<sub>2</sub>O<sub>3</sub> and PrO<i><sub>x</sub></i> by liquid injection ALD techniques. CHEMICAL VAPOR DEPOSITION, 11(3), 159-169. doi:10.1002/cvde.200406348A superlattice approach to the synthesis of ferroelectric Strontium Bismuth Tantalate thin films using liquid-injection-MOCVD (Journal article)
Potter, R., Awad, A., Chalker, P. R., Wang, P., Jones, A. C., Noakes, T. C. Q., & Bailey, P. (2005). A superlattice approach to the synthesis of ferroelectric Strontium Bismuth Tantalate thin films using liquid-injection-MOCVD. MRS Proceedings, 902. doi:10.1557/proc-0902-t02-02CCDC 255507: Experimental Crystal Structure Determination (Journal article)
Loo, Y. F., O Kane, R., Jones, A. C., Aspinall, H. C., Potter, R. J., Chalker, P. R., . . . Smith, L. M. (2005). CCDC 255507: Experimental Crystal Structure Determination. Cambridge Structural Database. doi:10.5517/cc8kw5vCCDC 255508: Experimental Crystal Structure Determination (Journal article)
Loo, Y. F., O Kane, R., Jones, A. C., Aspinall, H. C., Potter, R. J., Chalker, P. R., . . . Smith, L. M. (2005). CCDC 255508: Experimental Crystal Structure Determination. Cambridge Structural Database. doi:10.5517/cc8kw6wMapping of the effective electron mass in III-V semiconductors (Conference Paper)
Gass, M. H., Sanchez, A. M., Papworth, A. J., Bullough, T. J., Beanland, R., & Chalker, P. R. (2005). Mapping of the effective electron mass in III-V semiconductors. In Microscopy of Semiconducting Materials Vol. 107 (pp. 491-494). Retrieved from https://www.webofscience.com/Selective laser melting of high aspect ratio 3D nickel – titanium structures for MEMS applications (Journal article)
Chalker, P., Clare, A., Davies, S., Sutcliffe, C. J., & Tsopanos, S. (2005). Selective laser melting of high aspect ratio 3D nickel – titanium structures for MEMS applications. MRS Proceedings, 890. doi:10.1557/proc-0890-y03-022004
Atomic vapour deposition (AVD) of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> using an all alkoxide precursor (Journal article)
Chalker, P. R., Potter, R. J., Roberts, J. L., Jones, A. C., Smith, L. M., & Schumacher, M. (2004). Atomic vapour deposition (AVD) of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> using an all alkoxide precursor. JOURNAL OF CRYSTAL GROWTH, 272(1-4), 778-784. doi:10.1016/j.jcrysgro.2004.08.109Growth of gadolinium oxide thin films by liquid injection MOCVD using a new gadolinium alkoxide precursor (Journal article)
Aspinall, H. C., Gaskell, J. M., Loo, Y. F., Jones, A. C., Chalker, P. R., Potter, R. J., . . . Critchlow, G. W. (2004). Growth of gadolinium oxide thin films by liquid injection MOCVD using a new gadolinium alkoxide precursor. CHEMICAL VAPOR DEPOSITION, 10(6), 301-305. doi:10.1002/cvde.200306310Growth of neodymium oxide thin films by liquid-injection MOCVD using a new neodymium alkoxide precursor (Journal article)
Loo, Y. F., Potter, R. L., Jones, A. C., Aspinall, H. C., Gaskell, J. M., Chalker, P. R., . . . Critchlow, G. W. (2004). Growth of neodymium oxide thin films by liquid-injection MOCVD using a new neodymium alkoxide precursor. CHEMICAL VAPOR DEPOSITION, 10(6), 306-310. doi:10.1002/cvde.200406313Some recent developments in the MOCVD and ALD of high-κ dielectric oxides (Journal article)
Jones, A. C., Aspinall, H. C., Chalker, P. R., Potter, R. J., Kukli, K., Rahtu, A., . . . Leskelä, M. (2004). Some recent developments in the MOCVD and ALD of high-κ dielectric oxides. JOURNAL OF MATERIALS CHEMISTRY, 14(21), 3101-3112. doi:10.1039/b405525jElemental mapping using the Ga 3d and In 4d transitions in the ε<sub>2</sub> absorption spectra derived from EELS (Journal article)
Gass, M. H., Papworth, A. J., Bullough, T. J., & Chalker, P. R. (2004). Elemental mapping using the Ga 3d and In 4d transitions in the ε<sub>2</sub> absorption spectra derived from EELS. ULTRAMICROSCOPY, 101(2-4), 257-264. doi:10.1016/j.ultramic.2004.06.007Fabrication of epitaxial III-nitride cantilevers on silicon (111) substrates (Journal article)
Davies, S., Huang, T. S., Murray, R. T., Gass, M. H., Papworth, A. J., Joyce, T. B., & Chalker, P. R. (2004). Fabrication of epitaxial III-nitride cantilevers on silicon (111) substrates. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 15(11), 705-710. doi:10.1023/B:JMSE.0000043416.67986.10Thermal stability of hafnium silicate dielectric films deposited by a dual source liquid injection MOCVD (Journal article)
Chalker, P. R., Marshall, P. A., Potter, R. J., Joyce, T. B., Jones, A. C., Taylor, S., . . . Bailey, P. (2004). Thermal stability of hafnium silicate dielectric films deposited by a dual source liquid injection MOCVD. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 15(11), 711-714. doi:10.1023/B:JMSE.0000043417.59029.d6Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/GaAs QWs: blue shift versus red shift (Conference Paper)
Balkan, N., Mazzucato, S., Erol, A., Hepburn, C. J., Potter, R. J., Boland-Thoms, A., . . . Bullough, T. J. (2004). Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/GaAs QWs: blue shift versus red shift. In IEE PROCEEDINGS-OPTOELECTRONICS Vol. 151 (pp. 284-289). doi:10.1049/ip-opt:20040935Growth of hafnium aluminate thin films by liquid injection MOCVD using alkoxide precursors (Journal article)
Marshall, P. A., Potter, R. J., Jones, A. C., Chalker, P. R., Taylor, S., Critchlow, G. W., & Rushworth, S. A. (2004). Growth of hafnium aluminate thin films by liquid injection MOCVD using alkoxide precursors. CHEMICAL VAPOR DEPOSITION, 10(5), 275-279. doi:10.1002/cvde.200306301High Spatial Resolution Mapping of the Effective Mass in GaInNAs (Journal article)
Gass, M. H., Sanchez, A. M., Papworth, A. J., Bullough, T. J., & Chalker, P. R. (2004). High Spatial Resolution Mapping of the Effective Mass in GaInNAs. Microscopy and Microanalysis, 10(S02), 828-829. doi:10.1017/s1431927604881078Quantitative Elemental Mapping Using Valance-Band Transitions in Epsilon2, Using Electron Energy Loss Spectroscopy (Journal article)
Gass, M. H., Sanchez, A. M., Papworth, A. J., Bullough, T. J., & Chalker, P. R. (2004). Quantitative Elemental Mapping Using Valance-Band Transitions in Epsilon2, Using Electron Energy Loss Spectroscopy. Microscopy and Microanalysis, 10(S02), 866-867. doi:10.1017/s143192760488108xThe microstructural influence of nitrogen incorporation in dilute nitride semiconductors (Journal article)
Chalker, P. R., Bullough, T. J., Gass, M., Thomas, S., & Joyce, T. B. (2004). The microstructural influence of nitrogen incorporation in dilute nitride semiconductors. JOURNAL OF PHYSICS-CONDENSED MATTER, 16(31), S3161-S3170. doi:10.1088/0953-8984/16/31/012Growth of Praseodymium Oxide and Praseodymium Silicate Thin Films by Liquid Injection MOCVD. (Journal article)
Aspinall, H. C., Gaskell, J., Williams, P. A., Jones, A. C., Chalker, P. R., Marshall, P. A., . . . Critchlow, G. W. (2004). Growth of Praseodymium Oxide and Praseodymium Silicate Thin Films by Liquid Injection MOCVD.. ChemInform, 35(22). doi:10.1002/chin.200422024Characterization of hafnium aluminate gate dielectrics deposited by liquid injection metalorganic chemical vapor deposition (Journal article)
Potter, R. J., Marshall, P. A., Chalker, P. R., Taylor, S., Jones, A. C., Noakes, T. C. Q., & Bailey, P. (2004). Characterization of hafnium aluminate gate dielectrics deposited by liquid injection metalorganic chemical vapor deposition. APPLIED PHYSICS LETTERS, 84(20), 4119-4121. doi:10.1063/1.1755424Growth of Lanthanum Oxide Thin Films by Liquid Injection MOCVD Using a Novel Lanthanum Alkoxide Precursor. (Journal article)
Aspinall, H. C., Gaskell, J., Williams, P. A., Jones, A. C., Chalker, P. R., Marshall, P. A., . . . Critchlow, G. W. (2004). Growth of Lanthanum Oxide Thin Films by Liquid Injection MOCVD Using a Novel Lanthanum Alkoxide Precursor.. ChemInform, 35(15). doi:10.1002/chin.200415215Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices (Journal article)
Davies, S., Huang, T. S., Gass, M. H., Papworth, A. J., Joyce, T. B., & Chalker, P. R. (2004). Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices. APPLIED PHYSICS LETTERS, 84(14), 2566-2568. doi:10.1063/1.1695196Growth of praseodymium oxide and praseodymium silicate thin films by liquid injection MOCVD (Journal article)
Aspinall, H. C., Gaskell, J., Williams, P. A., Jones, A. C., Chalker, P. R., Marshall, P. A., . . . Critchlow, G. W. (2004). Growth of praseodymium oxide and praseodymium silicate thin films by liquid injection MOCVD. CHEMICAL VAPOR DEPOSITION, 10(2), 83-89. doi:10.1002/cvde.200306282Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy (Journal article)
Gass, M. H., Papworth, A. J., Joyce, T. B., Bullough, T. J., & Chalker, P. R. (2004). Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy. APPLIED PHYSICS LETTERS, 84(9), 1453-1455. doi:10.1063/1.1650906Growth of lanthanum oxide thin films by liquid injection MOCVD using a novel lanthanum alkoxide precursor (Journal article)
Aspinall, H. C., Gaskell, J., Williams, P. A., Jones, A. C., Chalker, P. R., Marshall, P. A., . . . Critchlow, G. W. (2004). Growth of lanthanum oxide thin films by liquid injection MOCVD using a novel lanthanum alkoxide precursor. CHEMICAL VAPOR DEPOSITION, 10(1), 13-+. doi:10.1002/cvde.200304164Deposition of hafnium silicate films by liquid injection MOCVD using a single source or dual source approach (Journal article)
Roberts, J. L., Marshall, P. A., Jones, A. C., Chalker, P. R., Bickley, J. F., Williams, P. A., . . . Lindner, J. (2004). Deposition of hafnium silicate films by liquid injection MOCVD using a single source or dual source approach. JOURNAL OF MATERIALS CHEMISTRY, 14(3), 391-395. doi:10.1039/b305665cSynthesis and characterisation of four new heterometal alkoxides: potential precursors for the MOCVD of ferroelectric oxides (Journal article)
Jones, A. C., Tobin, N. L., Marshall, P. A., Potter, R. J., Chalker, P. R., Bickley, J. F., . . . Critchlow, G. W. (2004). Synthesis and characterisation of four new heterometal alkoxides: potential precursors for the MOCVD of ferroelectric oxides. JOURNAL OF MATERIALS CHEMISTRY, 14(5), 887-894. doi:10.1039/b312697h2003
Growth of Praseodymium Oxide Thin Films by Liquid Injection MOCVD Using a Novel Praseodymium Alkoxide Precursor. (Journal article)
Aspinall, H. C., Gaskell, J., Williams, P. A., Jones, A. C., Chalker, P. R., Marshall, P. A., . . . Critchlow, G. W. (2003). Growth of Praseodymium Oxide Thin Films by Liquid Injection MOCVD Using a Novel Praseodymium Alkoxide Precursor.. ChemInform, 34(52). doi:10.1002/chin.200352025Growth of Hafnium Dioxide Thin Films by Liquid-Injection MOCVD Using Alkylamide and Hydroxylamide Precursors (Journal article)
Williams, P. A., Jones, A. C., Tobin, N. L., Chalker, P. R., Taylor, S., Marshall, P. A., . . . Critchlow, G. W. (2003). Growth of Hafnium Dioxide Thin Films by Liquid-Injection MOCVD Using Alkylamide and Hydroxylamide Precursors. Advanced Materials, 15(24), 309-314.Growth of hafnium dioxide thin films by liquid-injection MOCVD using alkylamide and hydroxylamide precursors (Journal article)
Williams, P. A., Jones, A. C., Tobin, N. L., Chalker, P. R., Taylor, S., Marshall, P. A., . . . Critchlow, G. W. (2003). Growth of hafnium dioxide thin films by liquid-injection MOCVD using alkylamide and hydroxylamide precursors. CHEMICAL VAPOR DEPOSITION, 9(6), 309-314. doi:10.1002/cvde.200306271Deposition of high-<i>k</i> dielectric oxide films by liquid injection MOCVD (Journal article)
Jones, A. C., Williams, P. A., Chalker, P. R., Taylor, S., Zoolfakr, A., Smith, L. M., & McGraw, P. (2003). Deposition of high-<i>k</i> dielectric oxide films by liquid injection MOCVD. INTEGRATED FERROELECTRICS, 57, 1271-1277. doi:10.1080/714040784Some recent developments in the metalorganic chemical vapour deposition of high-κ dielectric oxides (Conference Paper)
Chalker, P. R., & Jones, A. C. (2004). Some recent developments in the metalorganic chemical vapour deposition of high-κ dielectric oxides. In PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS II Vol. 2003 (pp. 73-87). Retrieved from https://www.webofscience.com/Growth of Praseodymium Oxide Thin Films by Liquid Injection MOCVD using a Novel Praseodymium Alkoxide Precursor (Journal article)
Aspinall, H. C., Gaskell, J., Williams, P. A., Jones, A. C., Chalker, P. R., Marshall, P. A., . . . Critchlow, G. W. (2003). Growth of Praseodymium Oxide Thin Films by Liquid Injection MOCVD using a Novel Praseodymium Alkoxide Precursor. Advanced Materials, 15(20), 235-238.Growth of praseodymium oxide thin films by liquid injection MOCVD using a novel praseodymium alkoxide precursor (Journal article)
Aspinall, H. C., Gaskell, J., Williams, P. A., Jones, A. C., Chalker, P. R., Marshall, P. A., . . . Critchlow, G. W. (2003). Growth of praseodymium oxide thin films by liquid injection MOCVD using a novel praseodymium alkoxide precursor. CHEMICAL VAPOR DEPOSITION, 9(5), 235-+. doi:10.1002/cvde.200304160Development of improved precursors for the MOCVD of bismuth titanate (Conference Paper)
Williams, P. A., Jones, A. C., Tobin, N. L., Marshall, P. A., Chalker, P. R., Davies, H. O., & Smith, L. M. (2003). Development of improved precursors for the MOCVD of bismuth titanate. In FERROELECTRIC THIN FILMS XI Vol. 748 (pp. 105-110). Retrieved from https://www.webofscience.com/LiBC electronic, vibrational, structural, and low-temperature chemical behavior of a layered material isoelectronic with MgB<inf>2</inf> (Journal article)
Fogg, A. M., Chalker, P. R., Claridge, J. B., Darling, G. R., & Rosseinsky, M. J. (2003). LiBC electronic, vibrational, structural, and low-temperature chemical behavior of a layered material isoelectronic with MgB<inf>2</inf>. Physical Review B - Condensed Matter and Materials Physics, 67(24). doi:10.1103/PhysRevB.67.245106LiBC electronic, vibrational, structural, and low-temperature chemical behavior of a layered material isoelectronic with MgB<sub>2</sub> -: art. no. 245106 (Journal article)
Fogg, A. M., Chalker, P. R., Claridge, J. B., Darling, G. R., & Rosseinsky, M. J. (2003). LiBC electronic, vibrational, structural, and low-temperature chemical behavior of a layered material isoelectronic with MgB<sub>2</sub> -: art. no. 245106. PHYSICAL REVIEW B, 67(24). doi:10.1103/PhysRevB.67.245106Growth of Lanthanum Silicate Thin Films by Liquid Injection MOCVD Using Tris[bis(trimethylsilyl)amido]lanthanum. (Journal article)
Aspinall, H. C., Williams, P. A., Gaskell, J., Jones, A. C., Roberts, J. L., Smith, L. M., . . . Critchlow, G. W. (2003). Growth of Lanthanum Silicate Thin Films by Liquid Injection MOCVD Using Tris[bis(trimethylsilyl)amido]lanthanum.. ChemInform, 34(15). doi:10.1002/chin.200315024S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides (Journal article)
Mazzucato, S., Potter, R. J., Erol, A., Balkan, N., Chalker, P. R., Joyce, T. B., . . . Fontaine, C. (2003). S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17(1-4), 242-244. doi:10.1016/S1386-9477(02)00783-XSome recent developments in the chemical vapour deposition of electroceramic oxides (Journal article)
Jones, A. C., & Chalker, P. R. (2003). Some recent developments in the chemical vapour deposition of electroceramic oxides. Journal of Physics D: Applied Physics, 36(6), R53-R79. doi:10.1088/0022-3727/36/6/202Effect of increased nitrogen incorporation on the growth of GaInNAs/GaAs (Journal article)
Bullough, T. J., Davies, S., Thomas, S., Joyce, T. B., & Chalker, P. R. (2003). Effect of increased nitrogen incorporation on the growth of GaInNAs/GaAs. SOLID-STATE ELECTRONICS, 47(3), 407-412. doi:10.1016/S0038-1101(02)00380-5Medium energy ion scattering studies of as-grown and annealed GaInNAs/GaAs quantum well (Journal article)
White, S. L., Thomas, S., Joyce, T. B., Bullough, T. J., Chalker, P. R., Noakes, T. C. Q., . . . Balkan, N. (2003). Medium energy ion scattering studies of as-grown and annealed GaInNAs/GaAs quantum well. SOLID-STATE ELECTRONICS, 47(3), 425-429. doi:10.1016/S0038-1101(02)00383-0Optical properties of GaInNAs/GaAs quantum wells (Journal article)
Mazzucato, S., Erol, A., Potter, R. J., Balkan, N., Chalker, P. R., Thomas, S., . . . Bullough, T. J. (2003). Optical properties of GaInNAs/GaAs quantum wells. SOLID-STATE ELECTRONICS, 47(3), 483-487. doi:10.1016/S0038-1101(02)00394-5Physical properties of diamond for thermistors and pressure transducers (Journal article)
Chalker, P. R., Johnston, C., & Werner, M. (2003). Physical properties of diamond for thermistors and pressure transducers. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 18(3), S113-S116. doi:10.1088/0268-1242/18/3/316In-plane photovoltaic and photoconductive effects on GaInAs and GaInNAs double quantum well structures (Journal article)
Akçay, N., Erol, A., Arikan, M., Mazzucato, S., Chalker, P. R., & Joyce, T. B. (2003). In-plane photovoltaic and photoconductive effects on GaInAs and GaInNAs double quantum well structures. IEE PROCEEDINGS-OPTOELECTRONICS, 150(1), 96-98. doi:10.1049/ip-opt:20030043Growth of lanthanum silicate thin films by liquid injection MOCVD using tris[bis(trimethyisilyl)amido]lanthanum (Journal article)
Aspinall, H. C., Williams, P. A., Gaskell, J., Jones, A. C., Roberts, J. L., Smith, L. M., . . . Critchlow, G. W. (2003). Growth of lanthanum silicate thin films by liquid injection MOCVD using tris[bis(trimethyisilyl)amido]lanthanum. Advanced Materials, 15(1), 7-10.Growth of lanthanum silicate thin films by liquid injection MOCVD using tris[bis(trimethylsilyl)amido]lanthanum (Journal article)
Aspinall, H. C., Williams, P. A., Gaskell, J., Jones, A. C., Roberts, J. L., Smith, L. M., . . . Critchlow, G. W. (2003). Growth of lanthanum silicate thin films by liquid injection MOCVD using tris[bis(trimethylsilyl)amido]lanthanum. CHEMICAL VAPOR DEPOSITION, 9(1), 7-+. doi:10.1002/cvde.200290009Diamond thermistors and pressure transducers (Journal article)
Chalker, P. R., Johnston, C., & Werner, M. (2003). Diamond thermistors and pressure transducers. Semiconductor Science & Technology, 18(3), 113-116.Growth of hafnium oxide thin films by Liquid Injection MOCVD Using Alkylamide and Hydroxylamide Precursors (Journal article)
Williams, P. A., Jones, A. C., Tobin, N. L., Chalker, P. R., Marshall, P., Taylor, S., . . . Davies, H. O. (2003). Growth of hafnium oxide thin films by Liquid Injection MOCVD Using Alkylamide and Hydroxylamide Precursors. Chem. Vapour Deposition, 9(6), 1-6.Liquid injection MOCVD and ALD studies of "single source" Sr-Nb and Sr-Ta precursors (Conference Paper)
Potter, R. J., Marshall, P. A., Roberts, J. L., Jones, A. C., Chalker, P. R., Vehkamäki, M., . . . Smith, L. M. (2004). Liquid injection MOCVD and ALD studies of "single source" Sr-Nb and Sr-Ta precursors. In FERROELECTRIC THIN FILMS XII Vol. 784 (pp. 97-108). Retrieved from https://www.webofscience.com/Liquid injection MOCVD of rare-earth oxides using new alkoxide precursors (Conference Paper)
Williams, P. A., Jones, A. C., Aspinall, H. C., Gaskell, J. M., Chalker, P. R., Marshall, P. A., . . . Smith, L. M. (2004). Liquid injection MOCVD of rare-earth oxides using new alkoxide precursors. In FERROELECTRIC THIN FILMS XII Vol. 784 (pp. 461-466). Retrieved from https://www.webofscience.com/Liquid injection MOCVD of rare-earth oxides using new alkoxide precursors (Conference Paper)
Williams, P. A., Jones, A. C., Aspinall, H. C., Gaskell, J. M., Chalker, P. R., Marshall, P. A., . . . Smith, L. M. (2004). Liquid injection MOCVD of rare-earth oxides using new alkoxide precursors. In FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES Vol. 786 (pp. 233-238). Retrieved from https://www.webofscience.com/Some recent developments in the chemical vapour deposition of electroceramic oxides (Journal article)
Jones, A. C., & Chalker, P. R. (2003). Some recent developments in the chemical vapour deposition of electroceramic oxides. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 36(6), R80-R95. Retrieved from https://www.webofscience.com/2002
Novel Mononuclear Alkoxide Precursors for the MOCVD of ZrO<sub>2</sub> and HfO<sub>2</sub> Thin Films. (Journal article)
Williams, P. A., Roberts, J. L., Jones, A. C., Chalker, P. R., Tobin, N. L., Bickley, J. F., . . . Leedham, T. J. (2002). Novel Mononuclear Alkoxide Precursors for the MOCVD of ZrO<sub>2</sub> and HfO<sub>2</sub> Thin Films.. ChemInform, 33(43), 19. doi:10.1002/chin.200243019HfO<sub>2</sub> and ZrO<sub>2</sub> alternative gate dielectrics for silicon devices by liquid injection chemical vapour deposition (Journal article)
Taylor, S., Williams, P. A., Roberts, J. L., Jones, A. C., & Chalker, P. R. (2002). HfO<sub>2</sub> and ZrO<sub>2</sub> alternative gate dielectrics for silicon devices by liquid injection chemical vapour deposition. ELECTRONICS LETTERS, 38(21), 1285-1286. doi:10.1049/el:20020801Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit (Journal article)
Thomas, S., White, S., Chalker, P. R., Bullough, T. J., & Joyce, T. B. (2002). Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 13(9), 525-529. doi:10.1023/A:1019641611417Topological analysis of defects in GaN epitaxial films (Journal article)
Pond, R. C., Huang, T. -S., Chalker, P., & Dimitrakopulos, G. (2002). Topological analysis of defects in GaN epitaxial films. Acta Crystallographica Section A Foundations of Crystallography, 58(s1), c373. doi:10.1107/s0108767302099890Novel mononuclear alkoxide precursors for the MOCVD of ZrO<inf>2</inf> and HfO<inf>2</inf> thin films (Journal article)
Williams, P. A., Roberts, J. L., Jones, A. C., Chalker, P. R., Tobin, N. L., Bickley, J. F., . . . Leedham, T. J. (2002). Novel mononuclear alkoxide precursors for the MOCVD of ZrO<inf>2</inf> and HfO<inf>2</inf> thin films. Advanced Materials, 14(13-14), 163-170.Novel mononuclear alkoxide precursors for the MOCVD of ZrO<sub>2</sub> and HfO<sub>2</sub> thin films (Journal article)
Williams, P. A., Roberts, J. L., Jones, A. C., Chalker, P. R., Tobin, N. L., Bickley, J. F., . . . Leedham, T. J. (2002). Novel mononuclear alkoxide precursors for the MOCVD of ZrO<sub>2</sub> and HfO<sub>2</sub> thin films. CHEMICAL VAPOR DEPOSITION, 8(4), 163-170. doi:3.0.CO;2-V">10.1002/1521-3862(20020704)8:4<163::AID-CVDE163>3.0.CO;2-VDOI: 10.1002/1521-3862(20020704)8:4<163::AID-CVDE163>3.0.CO;2-V
ChemInform Abstract: A First Transition Series Pseudotetrahedral Oxynitride Anion: Synthesis and Characterization of Ba<sub>2</sub>VO<sub>3</sub>N. (Journal article)
Clarke, S. J., Chalker, P. R., Holman, J., Michie, C. W., Puyet, M., & Rosseinsky, M. J. (2002). ChemInform Abstract: A First Transition Series Pseudotetrahedral Oxynitride Anion: Synthesis and Characterization of Ba<sub>2</sub>VO<sub>3</sub>N.. ChemInform, 33(26). doi:10.1002/chin.200226009Chemical beam epitaxy of GaN on Si (111) using AlAs butter layers (Journal article)
Huang, T. S., Joyce, T. B., Murray, R. T., Papworth, A. J., & Chalker, P. R. (2002). Chemical beam epitaxy of GaN on Si (111) using AlAs butter layers. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 35(7), 620-624. doi:10.1088/0022-3727/35/7/309A first transition series pseudotetrahedral oxynitride anion: synthesis and characterization of Ba(2)VO(3)N. (Journal article)
Clarke, S. J., Chalker, P. R., Holman, J., Michie, C. W., Puyet, M., & Rosseinsky, M. J. (2002). A first transition series pseudotetrahedral oxynitride anion: synthesis and characterization of Ba(2)VO(3)N.. Journal of the American Chemical Society, 124(13), 3337-3342. doi:10.1021/ja0122896A first transition series pseudotetrahedral oxynitride anion:: Synthesis and characterization of Ba<sub>2</sub>VO<sub>3</sub>N (Journal article)
Clarke, S. J., Chalker, P. R., Holman, J., Michie, C. W., Puyet, M., & Rosseinsky, M. J. (2002). A first transition series pseudotetrahedral oxynitride anion:: Synthesis and characterization of Ba<sub>2</sub>VO<sub>3</sub>N. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 124(13), 3337-3342. doi:10.1021/ja0122896Novel mononuclear zirconium and hafnium alkoxides;: improved precursors for the MOCVD of ZrO<sub>2</sub> and HfO<sub>2</sub> (Journal article)
Williams, P. A., Roberts, J. L., Jones, A. C., Chalker, P. R., Bickley, J. F., Steiner, A., . . . Leedham, T. J. (2002). Novel mononuclear zirconium and hafnium alkoxides;: improved precursors for the MOCVD of ZrO<sub>2</sub> and HfO<sub>2</sub>. JOURNAL OF MATERIALS CHEMISTRY, 12(2), 165-167. doi:10.1039/b109994a' Novel Mononuclear Alkoxide Precursors for the MOCVD of ZrO2 and HfO2 Thin Films' (Journal article)
Williams, P. A., Roberts, J. L., Jones, A. C., Chalker, P. R., Tobin, N. L., Bickley, J. F., . . . Leedham, T. J. (2002). ' Novel Mononuclear Alkoxide Precursors for the MOCVD of ZrO2 and HfO2 Thin Films'. Chemical Vapor Deposition, 8(4), 163-170.Chapter B4 3. Boron doping and characterisation (Chapter)
Johnston, C., Crossley, A., Werner, M., & Chalker, P. R. (2002). Chapter B4 3. Boron doping and characterisation. In EMIS (Ed.), Growth, Properties and Application of Diamond (Vol. 26, pp. 337-344). .: Electronic Materials Information Service.Development of Improved Precursors for the MOCVD of Bismuth Titanate (Journal article)
Williams, P. A., Jones, A. C., Tobin, N. L., Marshall, P. A., Chalker, P. R., Davies, H. O., & Smith, L. M. (2002). Development of Improved Precursors for the MOCVD of Bismuth Titanate. MRS Proceedings, 748. doi:10.1557/proc-748-u12.3MOCVD of HfO<sub>2</sub> from alkoxide and alkylamide precursors (Journal article)
Roberts, J. L., Williams, P. A., Jones, A. C., Marshall, P., Chalker, P. R., Bickley, J. F., . . . Smith, L. M. (2003). MOCVD of HfO<sub>2</sub> from alkoxide and alkylamide precursors. NOVEL MATERIALS AND PROCESSES FOR ADVANCED CMOS, 745, 173-178. Retrieved from https://www.webofscience.com/Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit (Journal article)
Thomas, S., White, S., Chalker, P. R., Bullough, T. J., & Joyce, T. B. (2002). Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit. J. Mater. Sci.-Mater. In Electronics, 13(9)(9), 525-529.Novel mononuclear zirconium and hafnium alkoxides; improved precursors for the MOCVD of ZrO2 and HfO2 (Journal article)
Williams, P. A., Roberts, J. L., Jones, A. C., Chalker, P. R., Bickley, J. F., Steiner, A., . . . Leedham, T. J. (2002). Novel mononuclear zirconium and hafnium alkoxides; improved precursors for the MOCVD of ZrO2 and HfO2. J. Materials Chemistry, 12(2)(2), 165-167.2001
Compositional variation in as-grown GaInNAs/GaAs quantum well structures (Journal article)
Chalker, P. R., Davock, H., Thomas, S., Joyce, T. B., Bullough, T. J., Potter, R. J., & Balkan, N. (2001). Compositional variation in as-grown GaInNAs/GaAs quantum well structures. JOURNAL OF CRYSTAL GROWTH, 233(1-2), 1-4. doi:10.1016/S0022-0248(01)01535-4Embedded fibre Bragg grating sensors in advanced composite materials (Journal article)
Kuang, K. S. C., Kenny, R., Whelan, M. P., Cantwell, W. J., & Chalker, P. R. (2001). Embedded fibre Bragg grating sensors in advanced composite materials. COMPOSITES SCIENCE AND TECHNOLOGY, 61(10), 1379-1387. doi:10.1016/S0266-3538(01)00037-9Optical characterization of GaInNAs (Conference Paper)
Potter, R. J., Mazzucato, S., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2001). Optical characterization of GaInNAs. In PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IX Vol. 4283 (pp. 638-644). doi:10.1117/12.432617Residual strain measurement and impact response of optical fibre Bragg grating sensors in fibre metal laminates (Journal article)
Kuang, K. S. C., Kenny, R., Whelan, M. P., Cantwell, W. J., & Chalker, P. R. (2001). Residual strain measurement and impact response of optical fibre Bragg grating sensors in fibre metal laminates. SMART MATERIALS & STRUCTURES, 10(2), 338-346. doi:10.1088/0964-1726/10/2/321Special issue on diamond sensors and actuators - Preface (Journal article)
Chalker, P. (2001). Special issue on diamond sensors and actuators - Preface. NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY, 11(2), U4. Retrieved from https://www.webofscience.com/The effect of In/N ratio on the optical quality and lasing threshold in Ga<sub>x</sub>In<sub>1-x</sub>As<sub>1-y</sub>N<sub>y</sub>/GaAs laser structures (Journal article)
Potter, R., Mazzucato, S., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2001). The effect of In/N ratio on the optical quality and lasing threshold in Ga<sub>x</sub>In<sub>1-x</sub>As<sub>1-y</sub>N<sub>y</sub>/GaAs laser structures. SUPERLATTICES AND MICROSTRUCTURES, 29(2), 169-186. doi:10.1006/spmi.2000.09672000
Photoluminescence in Ga<sub>0.85</sub>In<sub>0.15</sub>As<sub>0.99</sub>N<sub>0.01</sub>/GaAs single quantum wells:: Effect of low temperature heat treatment in N<sub>2</sub> (Journal article)
Potter, R. J., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2000). Photoluminescence in Ga<sub>0.85</sub>In<sub>0.15</sub>As<sub>0.99</sub>N<sub>0.01</sub>/GaAs single quantum wells:: Effect of low temperature heat treatment in N<sub>2</sub>. PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VIII, PTS 1 AND 2, 3944, 900-909. doi:10.1117/12.391403B-doping and piezoresistivity of CVD diamond (Conference Paper)
Johnston, C., Crossley, A., Chalker, P. R., & Werner, M. (2000). B-doping and piezoresistivity of CVD diamond. In MICRO MATERIALS, PROCEEDINGS (pp. 867-872). Retrieved from https://www.webofscience.com/Indium segregation in MOCVD InGaN layers studied by medium energy ion scattering (Journal article)
Chalker, P. R., Morrice, D., Joyce, T. B., Noakes, T. C. Q., Bailey, P., & Considine, L. (2000). Indium segregation in MOCVD InGaN layers studied by medium energy ion scattering. DIAMOND AND RELATED MATERIALS, 9(3-6), 520-523. doi:10.1016/S0925-9635(99)00259-9Investigation of electromechanical distortions in gallium nitride by reflectance anisotropy spectroscopy (Journal article)
Morrice, D. E., Farrell, T., Joyce, T. B., & Chalker, P. R. (2000). Investigation of electromechanical distortions in gallium nitride by reflectance anisotropy spectroscopy. DIAMOND AND RELATED MATERIALS, 9(3-6), 460-463. doi:10.1016/S0925-9635(99)00282-4Photoluminescence in Ga<inf>0.85</inf>In<inf>0.15</inf>As<inf>0.99</inf>N<inf>0.01</inf>/GaAs single quantum wells: Effect of low temperature heat treatment in N<inf>2</inf> (Conference Paper)
Potter, R. J., Balkan, N., Adams, M. J., Chalker, P. R., Joyce, T. B., & Bullough, T. J. (2000). Photoluminescence in Ga<inf>0.85</inf>In<inf>0.15</inf>As<inf>0.99</inf>N<inf>0.01</inf>/GaAs single quantum wells: Effect of low temperature heat treatment in N<inf>2</inf>. In Proceedings of SPIE - The International Society for Optical Engineering Vol. 3944.The material properties, growth technology and applications of wide bandgap semiconductors for sensors and electronics (Conference Paper)
Chalker, P. R. (2000). The material properties, growth technology and applications of wide bandgap semiconductors for sensors and electronics. In MICRO MATERIALS, PROCEEDINGS (pp. 857). Retrieved from https://www.webofscience.com/1999
Metalorganic molecular beam epitaxy of GaN and Al(Ga)N on GaAs(001) studied using laser reflectometry and reflectance anisotropy spectroscopy (Journal article)
Joyce, T. B., Chalker, P. R., & Farrell, T. (1999). Metalorganic molecular beam epitaxy of GaN and Al(Ga)N on GaAs(001) studied using laser reflectometry and reflectance anisotropy spectroscopy. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 10(8), 585-588. doi:10.1023/A:1008909008317High—temperature Sensors Based on SiC and Diamond Technology (Chapter)
Werner, M., Krötz, G., M?ller, H., Eickhoff, M., Gluche, P., Adamschik, M., . . . Chalker, P. R. (1999). High—temperature Sensors Based on SiC and Diamond Technology. In Unknown Book (Vol. 5, pp. 141-190). Wiley. doi:3.0.co;2-j">10.1002/1616-8984(199904)5:1<141::aid-seup141>3.0.co;2-jDOI: 10.1002/1616-8984(199904)5:1<141::aid-seup141>3.0.co;2-j