2018
Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells (Journal article)
Gass, M. H., Bullough, T. J., Papworth, A., Thomas, S., Joyce, T. B., Chalker, P. R., . . . Balkan, N. (2003). Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells. MICROSCOPY OF SEMICONDUCTING MATERIALS 2003, (180), 225-228. Retrieved from https://www.webofscience.com/
Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells (Chapter)
Gass, M. H., Bullough, T. J., Papworth, A., Thomas, S., Joyce, T. B., Chalker, P. R., . . . Balkan, N. (2018). Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells. In Microscopy of Semiconducting Materials 2003 (pp. 225-228). doi:10.1201/9781351074636DOI: 10.1201/9781351074636
2011
Selective hydrogenation of amides using bimetallic Ru/Re and Rh/Re catalysts (Journal article)
Beamson, G., Papworth, A. J., Philipps, C., Smith, A. M., & Whyman, R. (2011). Selective hydrogenation of amides using bimetallic Ru/Re and Rh/Re catalysts. JOURNAL OF CATALYSIS, 278(2), 228-238. doi:10.1016/j.jcat.2010.12.009DOI: 10.1016/j.jcat.2010.12.009
2010
Selective Hydrogenation of Amides using Ruthenium/Molybdenum Catalysts (Journal article)
Beamson, G., Papworth, A. J., Philipps, C., Smith, A. M., & Whyman, R. (2010). Selective Hydrogenation of Amides using Ruthenium/Molybdenum Catalysts. ADVANCED SYNTHESIS & CATALYSIS, 352(5), 869-883. doi:10.1002/adsc.200900824DOI: 10.1002/adsc.200900824
Selective hydrogenation of amides using Rh/Mo catalysts (Journal article)
Beamson, G., Papworth, A. J., Philipps, C., Smith, A. M., & Whyman, R. (2010). Selective hydrogenation of amides using Rh/Mo catalysts. JOURNAL OF CATALYSIS, 269(1), 93-102. doi:10.1016/j.jcat.2009.10.020DOI: 10.1016/j.jcat.2009.10.020
2006
Mapping the effective mass of electrons in III-V semiconductor quantum confined structures (Journal article)
Gass, M. H., Papworth, A. J., Beanland, R., Bullough, T. J., & Chalker, P. R. (2006). Mapping the effective mass of electrons in III-V semiconductor quantum confined structures. PHYSICAL REVIEW B, 73(3). doi:10.1103/PhysRevB.73.035312DOI: 10.1103/PhysRevB.73.035312
Nanometer-scale strain measurements in semiconductors: An innovative approach using the plasmon peak in electron energy loss spectra (Journal article)
Sanchez, A. M., Beanland, R., Papworth, A. J., Goodhew, P. J., & Gass, M. H. (2006). Nanometer-scale strain measurements in semiconductors: An innovative approach using the plasmon peak in electron energy loss spectra. Applied Physics Letters, 88(5). doi:10.1063/1.2169904DOI: 10.1063/1.2169904
2005
Study of the electronic structure of carbon materials near the bandgap using electron energy loss spectroscopy (Journal article)
Alexandrou, I., Chremmou, K., Papworth, A. J., Bangert, U., Amaratunga, G. A. J., & Kiely, C. J. (2005). Study of the electronic structure of carbon materials near the bandgap using electron energy loss spectroscopy. Diamond and Related Materials, 14(9), 1522-1528. doi:10.1016/j.diamond.2005.04.004DOI: 10.1016/j.diamond.2005.04.004
Mapping quantum dot-in-well structures on the nanoscale using the plasmon peak in electron energy loss spectra (Journal article)
Sánchez, A. M., Beanland, R., Gass, M. H., Papworth, A. J., Goodhew, P. J., & Hopkinson, M. (n.d.). Mapping quantum dot-in-well structures on the nanoscale using the plasmon peak in electron energy loss spectra. Physical Review B, 72(7). doi:10.1103/physrevb.72.075339DOI: 10.1103/physrevb.72.075339
A Pt/Ru nanoparticulate system to study the bifunctional mechanism of electrocatalysis (Journal article)
Roth, C., Papworth, A. J., Hussain, I., Nichols, R. J., & Schiffrin, D. J. (2005). A Pt/Ru nanoparticulate system to study the bifunctional mechanism of electrocatalysis. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 581(1), 79-85. doi:10.1016/j.jelechem.2005.04.014DOI: 10.1016/j.jelechem.2005.04.014
V-defects and dislocations in InGaN/GaN heterostructures (Journal article)
Sánchez, A. M., Gass, M., Papworth, A. J., Goodhew, P. J., Singh, P., Ruterana, P., . . . Lee, H. J. (2005). V-defects and dislocations in InGaN/GaN heterostructures. Thin Solid Films, 479(1-2), 316-320. doi:10.1016/j.tsf.2004.11.207DOI: 10.1016/j.tsf.2004.11.207
Change sin plasmon peak position in a GaAs/In0.2Ga0.8As structure (Conference Paper)
Beanland, R., Sanchez, A. M., Papworth, A. J., Gass, M. H., & Goodhew, P. J. (2005). Change sin plasmon peak position in a GaAs/In0.2Ga0.8As structure. In A. G. Cullis, & J. L. Hutchison (Eds.), Microscopy of Semiconducting Materials (pp. 162-166). Oxford: Springer.
Nanoanalysis of InAs/GaAs quantum dots using low-loss EELS spectra (Conference Paper)
Sánchez, A. M., Gass, M. H., Papworth, A. J., Beanland, R., Drouot, V., & Goodhew, P. J. (n.d.). Nanoanalysis of InAs/GaAs quantum dots using low-loss EELS spectra. In Unknown Conference (pp. 259-262). Springer Berlin Heidelberg. doi:10.1007/3-540-31915-8_53DOI: 10.1007/3-540-31915-8_53
2004
Elemental mapping using the Ga 3d and In 4d transitions in the ε<sub>2</sub> absorption spectra derived from EELS (Journal article)
Gass, M. H., Papworth, A. J., Bullough, T. J., & Chalker, P. R. (2004). Elemental mapping using the Ga 3d and In 4d transitions in the ε<sub>2</sub> absorption spectra derived from EELS. ULTRAMICROSCOPY, 101(2-4), 257-264. doi:10.1016/j.ultramic.2004.06.007DOI: 10.1016/j.ultramic.2004.06.007
Fabrication of epitaxial III-nitride cantilevers on silicon (111) substrates (Journal article)
Davies, S., Huang, T. S., Murray, R. T., Gass, M. H., Papworth, A. J., Joyce, T. B., & Chalker, P. R. (2004). Fabrication of epitaxial III-nitride cantilevers on silicon (111) substrates. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 15(11), 705-710. doi:10.1023/B:JMSE.0000043416.67986.10DOI: 10.1023/B:JMSE.0000043416.67986.10
High Spatial Resolution Mapping of the Effective Mass in GaInNAs (Journal article)
Gass, M. H., Sanchez, A. M., Papworth, A. J., Bullough, T. J., & Chalker, P. R. (2004). High Spatial Resolution Mapping of the Effective Mass in GaInNAs. Microscopy and Microanalysis, 10(S02), 828-829. doi:10.1017/s1431927604881078DOI: 10.1017/s1431927604881078
Quantitative Elemental Mapping Using Valance-Band Transitions in Epsilon2, Using Electron Energy Loss Spectroscopy (Journal article)
Gass, M. H., Sanchez, A. M., Papworth, A. J., Bullough, T. J., & Chalker, P. R. (2004). Quantitative Elemental Mapping Using Valance-Band Transitions in Epsilon2, Using Electron Energy Loss Spectroscopy. Microscopy and Microanalysis, 10(S02), 866-867. doi:10.1017/s143192760488108xDOI: 10.1017/s143192760488108x
Nanoscale EELS analysis of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">InGaN</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">GaN</mml:mi></mml:mrow></mml:math>heterostructures (Journal article)
Sánchez, A. M., Gass, M., Papworth, A. J., Goodhew, P. J., & Ruterana, P. (n.d.). Nanoscale EELS analysis of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">InGaN</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">GaN</mml:mi></mml:mrow></mml:math>heterostructures. Physical Review B, 70(3). doi:10.1103/physrevb.70.035325DOI: 10.1103/physrevb.70.035325
Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices (Journal article)
Davies, S., Huang, T. S., Gass, M. H., Papworth, A. J., Joyce, T. B., & Chalker, P. R. (2004). Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices. APPLIED PHYSICS LETTERS, 84(14), 2566-2568. doi:10.1063/1.1695196DOI: 10.1063/1.1695196
Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy (Journal article)
Gass, M. H., Papworth, A. J., Joyce, T. B., Bullough, T. J., & Chalker, P. R. (2004). Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy. APPLIED PHYSICS LETTERS, 84(9), 1453-1455. doi:10.1063/1.1650906DOI: 10.1063/1.1650906
Calculation of the bandgap and of the type of interband transitions in tetrahedral amorphous carbon using electron energy loss spectroscopy (Journal article)
Alexandrou, I., Papworth, A. J., Kiely, C. J., Amaratunga, G. A. J., & Brown, L. M. (2004). Calculation of the bandgap and of the type of interband transitions in tetrahedral amorphous carbon using electron energy loss spectroscopy. Diamond and Related Materials, 13, 140882111411.
Defect analysis in InGaN/GaN heterostructures by combined EDX and CTEM (Journal article)
Sanchez, A. M., Gass, M., Papworth, A. J., Goodhew, P. J., & Ruterana, P. (2004). Defect analysis in InGaN/GaN heterostructures by combined EDX and CTEM. Microscopy and microanalysis, 10(2), 582-583.
EELS analysis of InGaN/GaN heterostructures using the Ga 3d transitions in epsilon 2 (Journal article)
Sanchez, A. M., Gass, M., Papworth, A. J., Goodhew, P. J., & Ruterana, P. (2004). EELS analysis of InGaN/GaN heterostructures using the Ga 3d transitions in epsilon 2. Microscopy and microanalysis, 10(2), 864-865.
Indium fluctuations inside InGaN quantum wells by scanning transmission electron microscopy (Conference Paper)
Sanchez, A. M., Gass, M., Papworth, A. J., Ruterana, P., Cho, H. K., & Goodhew, P. J. (2004). Indium fluctuations inside InGaN quantum wells by scanning transmission electron microscopy. In EMAG 03 (pp. 131-134). Bristol: IoPP.
Problems associated with high spatial resolution X-ray mapping of multi-layer coatings on float glass (Journal article)
Papworth, A. J., Hughes, M. J., & Goodhew, P. J. (2004). Problems associated with high spatial resolution X-ray mapping of multi-layer coatings on float glass. Microscopy and microanalysis, 10(2), 646-647.
2003
Preparation of acrylate-stabilized gold and silver hydrosols and gold-polymer composite films (Journal article)
Hussain, I., Brust, M., Papworth, A. J., & Cooper, A. I. (2003). Preparation of acrylate-stabilized gold and silver hydrosols and gold-polymer composite films. LANGMUIR, 19(11), 4831-4835. doi:10.1021/la020710dDOI: 10.1021/la020710d
Indium fluctuations analysis inside InGaN quantum wells by Scanning Transmission Electron Microscopy (Conference Paper)
Sanchez, A., Gass, M., Papworth, A. J., Ruterana, P., Cho, H. K., & Goodhew, P. J. (2003). Indium fluctuations analysis inside InGaN quantum wells by Scanning Transmission Electron Microscopy. In S. McVitie, & D. McComb (Eds.), EMAG 2003 Vol. 179 (pp. 131-134). Oxford: Institute of Physics Publishing.
2002
Chemical beam epitaxy of GaN on Si (111) using AlAs butter layers (Journal article)
Huang, T. S., Joyce, T. B., Murray, R. T., Papworth, A. J., & Chalker, P. R. (2002). Chemical beam epitaxy of GaN on Si (111) using AlAs butter layers. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 35(7), 620-624. doi:10.1088/0022-3727/35/7/309DOI: 10.1088/0022-3727/35/7/309
2001
Calculation of the electronic structure of carbon films using electron energy loss spectroscopy. (Journal article)
Alexandro, I., Papworth, A. J., Rafferty, B., Amaratunga GAJ., Kiely, C. J., & Brown, L. M. (2001). Calculation of the electronic structure of carbon films using electron energy loss spectroscopy.. Ultramicroscopy, 90(1), 39-45. doi:10.1016/s0304-3991(01)00123-1DOI: 10.1016/s0304-3991(01)00123-1
X-ray spectral simulation and experimental detection of phosphorus segregation to grain boundaries in the presence of molybdenum. (Journal article)
Papworth, A. J., Watanabe, M., & Williams, D. B. (2001). X-ray spectral simulation and experimental detection of phosphorus segregation to grain boundaries in the presence of molybdenum.. Ultramicroscopy, 88(4), 265-274. doi:10.1016/s0304-3991(01)00083-3DOI: 10.1016/s0304-3991(01)00083-3
STEM and HREM analysis of vertically aligned carbon nanotubes (Journal article)
Papworth, A. J., Chhowalla, M., Alexandrou, I., Ducati, C., Kiely, C. J., & Amaratunga, G. A. J. (2001). STEM and HREM analysis of vertically aligned carbon nanotubes. Institute of Physics Conference Series, 168(168), 327-330.
2000
The oxidation behaviour of an Fe,AI, Si alloy containing uranium as an impurity, oxidised for short times at high temperatures (Journal article)
Fox, P., Ritherdon, J., & Papworth, A. J. (2000). The oxidation behaviour of an Fe,AI, Si alloy containing uranium as an impurity, oxidised for short times at high temperatures. Materials at High Temperatures, 17(4), 429-438. doi:10.1179/mht.2000.057DOI: 10.1179/mht.2000.057
Segregation to prior austenite grain boundaries in low-alloy steels (Journal article)
Papworth, A. J., & Williams, D. B. (2000). Segregation to prior austenite grain boundaries in low-alloy steels. Scripta Materialia, 42(11), 1107-1112. doi:10.1016/s1359-6462(00)00335-3DOI: 10.1016/s1359-6462(00)00335-3
Stem imaging of prior austenite grain boundaries (Journal article)
Papworth, A. J., & Williams, D. B. (2000). Stem imaging of prior austenite grain boundaries. Scripta Materialia, 42(7), 627-630. doi:10.1016/s1359-6462(99)00399-1DOI: 10.1016/s1359-6462(99)00399-1