Photo of Dr Adam Papworth

Dr Adam Papworth

Honorary Research Fellow Mechanical, Materials & Aerospace Eng

Publications

2018

Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells (Chapter)

Gass, M. H., Bullough, T. J., Papworth, A., Thomas, S., Joyce, T. B., Chalker, P. R., . . . Balkan, N. (2018). Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells. In Microscopy of Semiconducting Materials 2003 (pp. 225-228). doi:10.1201/9781351074636

DOI: 10.1201/9781351074636

2011

Selective hydrogenation of amides using bimetallic Ru/Re and Rh/Re catalysts (Journal article)

Beamson, G., Papworth, A. J., Philipps, C., Smith, A. M., & Whyman, R. (2011). Selective hydrogenation of amides using bimetallic Ru/Re and Rh/Re catalysts. JOURNAL OF CATALYSIS, 278(2), 228-238. doi:10.1016/j.jcat.2010.12.009

DOI: 10.1016/j.jcat.2010.12.009

2010

Selective Hydrogenation of Amides using Ruthenium/Molybdenum Catalysts (Journal article)

Beamson, G., Papworth, A. J., Philipps, C., Smith, A. M., & Whyman, R. (2010). Selective Hydrogenation of Amides using Ruthenium/Molybdenum Catalysts. ADVANCED SYNTHESIS & CATALYSIS, 352(5), 869-883. doi:10.1002/adsc.200900824

DOI: 10.1002/adsc.200900824

Selective hydrogenation of amides using Rh/Mo catalysts (Journal article)

Beamson, G., Papworth, A. J., Philipps, C., Smith, A. M., & Whyman, R. (2010). Selective hydrogenation of amides using Rh/Mo catalysts. JOURNAL OF CATALYSIS, 269(1), 93-102. doi:10.1016/j.jcat.2009.10.020

DOI: 10.1016/j.jcat.2009.10.020

2006

Mapping the effective mass of electrons in III-V semiconductor quantum confined structures (Journal article)

Gass, M. H., Papworth, A. J., Beanland, R., Bullough, T. J., & Chalker, P. R. (2006). Mapping the effective mass of electrons in III-V semiconductor quantum confined structures. PHYSICAL REVIEW B, 73(3). doi:10.1103/PhysRevB.73.035312

DOI: 10.1103/PhysRevB.73.035312

Nanometer-scale strain measurements in semiconductors: An innovative approach using the plasmon peak in electron energy loss spectra (Journal article)

Sanchez, A. M., Beanland, R., Papworth, A. J., Goodhew, P. J., & Gass, M. H. (2006). Nanometer-scale strain measurements in semiconductors: An innovative approach using the plasmon peak in electron energy loss spectra. Applied Physics Letters, 88(5), 051917. doi:10.1063/1.2169904

DOI: 10.1063/1.2169904

2005

Mapping quantum dot-in-well structures on the nanoscale using the plasmon peak in electron energy loss spectra (Journal article)

Sánchez, A. M., Beanland, R., Gass, M. H., Papworth, A. J., Goodhew, P. J., & Hopkinson, M. (n.d.). Mapping quantum dot-in-well structures on the nanoscale using the plasmon peak in electron energy loss spectra. Physical Review B, 72(7). doi:10.1103/physrevb.72.075339

DOI: 10.1103/physrevb.72.075339

A Pt/Ru nanoparticulate system to study the bifunctional mechanism of electrocatalysis (Journal article)

Roth, C., Papworth, A. J., Hussain, I., Nichols, R. J., & Schiffrin, D. J. (2005). A Pt/Ru nanoparticulate system to study the bifunctional mechanism of electrocatalysis. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 581(1), 79-85. doi:10.1016/j.jelechem.2005.04.014

DOI: 10.1016/j.jelechem.2005.04.014

Change sin plasmon peak position in a GaAs/In0.2Ga0.8As structure (Conference Paper)

Beanland, R., Sanchez, A. M., Papworth, A. J., Gass, M. H., & Goodhew, P. J. (2005). Change sin plasmon peak position in a GaAs/In0.2Ga0.8As structure. In A. G. Cullis, & J. L. Hutchison (Eds.), Microscopy of Semiconducting Materials (pp. 162-166). Oxford: Springer.

Nanoanalysis of InAs/GaAs quantum dots using low-loss EELS spectra (Conference Paper)

Sanchez, A. M., Gass, M. H., Papworth, A. J., Beanland, R., Drouot, V., & Goodhew, P. J. (2005). Nanoanalysis of InAs/GaAs quantum dots using low-loss EELS spectra. In A. G. Cullis, & J. L. Hutchison (Eds.), Microscopy of Semiconducting Materials Vol. 107 (pp. 259-262). Oxford: Springer.

Study of the electronic structure of carbon materials near the bandgap using electron energy loss spectroscopy (Journal article)

Alexandrou, I., Chremmou, K., Papworth, A. J., Bangert, U., Amaratunga, G. A. J., & Kiely, C. J. (2005). Study of the electronic structure of carbon materials near the bandgap using electron energy loss spectroscopy. Diamond and Related Materials, 14(9), 1522-1528. doi:10.1016/j.diamond.2005.04.004

DOI: 10.1016/j.diamond.2005.04.004

V-defects and dislocations in InGaN/GaN heterostructures (Journal article)

Sánchez, A. M., Gass, M., Papworth, A. J., Goodhew, P. J., Singh, P., Ruterana, P., . . . Lee, H. J. (2005). V-defects and dislocations in InGaN/GaN heterostructures. Thin Solid Films, 479(1-2), 316-320. doi:10.1016/j.tsf.2004.11.207

DOI: 10.1016/j.tsf.2004.11.207

2004

High Spatial Resolution Mapping of the Effective Mass in GaInNAs (Journal article)

Gass, M. H., Sanchez, A. M., Papworth, A. J., Bullough, T. J., & Chalker, P. R. (2004). High Spatial Resolution Mapping of the Effective Mass in GaInNAs. Microscopy and Microanalysis, 10(S02), 828-829. doi:10.1017/s1431927604881078

DOI: 10.1017/s1431927604881078

Quantitative Elemental Mapping Using Valance-Band Transitions in Epsilon2, Using Electron Energy Loss Spectroscopy (Journal article)

Gass, M. H., Sanchez, A. M., Papworth, A. J., Bullough, T. J., & Chalker, P. R. (2004). Quantitative Elemental Mapping Using Valance-Band Transitions in Epsilon2, Using Electron Energy Loss Spectroscopy. Microscopy and Microanalysis, 10(S02), 866-867. doi:10.1017/s143192760488108x

DOI: 10.1017/s143192760488108x

Calculation of the bandgap and of the type of interband transitions in tetrahedral amorphous carbon using electron energy loss spectroscopy (Journal article)

Alexandrou, I., Papworth, A. J., Kiely, C. J., Amaratunga, G. A. J., & Brown, L. M. (2004). Calculation of the bandgap and of the type of interband transitions in tetrahedral amorphous carbon using electron energy loss spectroscopy. Diamond and Related Materials, 13, 140882111411.

Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells (Journal article)

Gass, M. H., Bullough, T. J., Papworth, A., Thomas, S., Joyce, T. B., Chalker, P. R., . . . Balkan, N. (2003). Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells. MICROSCOPY OF SEMICONDUCTING MATERIALS 2003, (180), 225-228. Retrieved from http://gateway.webofknowledge.com/

Defect analysis in InGaN/GaN heterostructures by combined EDX and CTEM (Journal article)

Sanchez, A. M., Gass, M., Papworth, A. J., Goodhew, P. J., & Ruterana, P. (2004). Defect analysis in InGaN/GaN heterostructures by combined EDX and CTEM. Microscopy and microanalysis, 10(2), 582-583.

EELS analysis of InGaN/GaN heterostructures using the Ga 3d transitions in epsilon 2 (Journal article)

Sanchez, A. M., Gass, M., Papworth, A. J., Goodhew, P. J., & Ruterana, P. (2004). EELS analysis of InGaN/GaN heterostructures using the Ga 3d transitions in epsilon 2. Microscopy and microanalysis, 10(2), 864-865.

Elemental mapping using the Ga 3d and In 4d transitions in the epsilon(2) absorption spectra derived from EELS (Journal article)

Gass, M. H., Papworth, A. J., Bullough, T. J., & Chalker, P. R. (2004). Elemental mapping using the Ga 3d and In 4d transitions in the epsilon(2) absorption spectra derived from EELS. ULTRAMICROSCOPY, 101(2-4), 257-264. doi:10.1016/j.ultramic.2004.06.007

DOI: 10.1016/j.ultramic.2004.06.007

Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices (Journal article)

Davies, S., Huang, T. S., Gass, M. H., Papworth, A. J., Joyce, T. B., & Chalker, P. R. (2004). Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices. APPLIED PHYSICS LETTERS, 84(14), 2566-2568. doi:10.1063/1.1695196

DOI: 10.1063/1.1695196

Fabrication of epitaxial III-nitride cantilevers on silicon (111) substrates (Journal article)

Davies, S., Huang, T. S., Murray, R. T., Gass, M. H., Papworth, A. J., Joyce, T. B., & Chalker, P. R. (2004). Fabrication of epitaxial III-nitride cantilevers on silicon (111) substrates. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 15(11), 705-710. doi:10.1023/B:JMSE.0000043416.67986.10

DOI: 10.1023/B:JMSE.0000043416.67986.10

Indium fluctuations inside InGaN quantum wells by scanning transmission electron microscopy (Conference Paper)

Sanchez, A. M., Gass, M., Papworth, A. J., Ruterana, P., Cho, H. K., & Goodhew, P. J. (2004). Indium fluctuations inside InGaN quantum wells by scanning transmission electron microscopy. In EMAG 03 (pp. 131-134). Bristol: IoPP.

Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy (Journal article)

Gass, M. H., Papworth, A. J., Joyce, T. B., Bullough, T. J., & Chalker, P. R. (2004). Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy. APPLIED PHYSICS LETTERS, 84(9), 1453-1455. doi:10.1063/1.1650906

DOI: 10.1063/1.1650906

Nanoscale EELS analysis ofInGaN∕GaNheterostructures (Journal article)

Sánchez, A. M., Gass, M., Papworth, A. J., Goodhew, P. J., & Ruterana, P. (n.d.). Nanoscale EELS analysis ofInGaN∕GaNheterostructures. Physical Review B, 70(3). doi:10.1103/physrevb.70.035325

DOI: 10.1103/physrevb.70.035325

Problems associated with high spatial resolution X-ray mapping of multi-layer coatings on float glass (Journal article)

Papworth, A. J., Hughes, M. J., & Goodhew, P. J. (2004). Problems associated with high spatial resolution X-ray mapping of multi-layer coatings on float glass. Microscopy and microanalysis, 10(2), 646-647.

2003

Indium fluctuations analysis inside InGaN quantum wells by Scanning Transmission Electron Microscopy (Conference Paper)

Sanchez, A., Gass, M., Papworth, A. J., Ruterana, P., Cho, H. K., & Goodhew, P. J. (2003). Indium fluctuations analysis inside InGaN quantum wells by Scanning Transmission Electron Microscopy. In S. McVitie, & D. McComb (Eds.), EMAG 2003 Vol. 179 (pp. 131-134). Oxford: Institute of Physics Publishing.

Preparation of acrylate-stabilized gold and silver hydrosols and gold-polymer composite films (Journal article)

Hussain, I., Brust, M., Papworth, A. J., & Cooper, A. I. (2003). Preparation of acrylate-stabilized gold and silver hydrosols and gold-polymer composite films. LANGMUIR, 19(11), 4831-4835. doi:10.1021/la020710d

DOI: 10.1021/la020710d

2002

Chemical beam epitaxy of GaN on Si (111) using AlAs butter layers (Journal article)

Huang, T. S., Joyce, T. B., Murray, R. T., Papworth, A. J., & Chalker, P. R. (2002). Chemical beam epitaxy of GaN on Si (111) using AlAs butter layers. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 35(7), 620-624. doi:10.1088/0022-3727/35/7/309

DOI: 10.1088/0022-3727/35/7/309

2001

X-ray spectral simulation and experimental detection of phosphorus segregation to grain boundaries in the presence of molybdenum. (Journal article)

Papworth, A. J., Watanabe, M., & Williams, D. B. (2001). X-ray spectral simulation and experimental detection of phosphorus segregation to grain boundaries in the presence of molybdenum.. Ultramicroscopy, 88(4), 265-274. doi:10.1016/s0304-3991(01)00083-3

DOI: 10.1016/s0304-3991(01)00083-3

Calculation of the electronic structure of carbon films using electron energy loss spectroscopy (Journal article)

Alexandrou, I., Papworth, A. J., Rafferty, B., Amaratunga, G. A. J., Kiely, C. J., & Brown, L. M. (2001). Calculation of the electronic structure of carbon films using electron energy loss spectroscopy. Ultramicroscopy, 90(1), 39-45. doi:10.1016/s0304-3991(01)00123-1

DOI: 10.1016/s0304-3991(01)00123-1

STEM and HREM analysis of vertically aligned carbon nanotubes (Journal article)

Papworth, A. J., Chhowalla, M., Alexandrou, I., Ducati, C., Kiely, C. J., & Amaratunga, G. A. J. (2001). STEM and HREM analysis of vertically aligned carbon nanotubes. Institute of Physics Conference Series, 168(168), 327-330.

2000

Segregation to prior austenite grain boundaries in low-alloy steels (Journal article)

Papworth, A. J., & Williams, D. B. (2000). Segregation to prior austenite grain boundaries in low-alloy steels. Scripta Materialia, 42(11), 1107-1112. doi:10.1016/s1359-6462(00)00335-3

DOI: 10.1016/s1359-6462(00)00335-3

Stem imaging of prior austenite grain boundaries (Journal article)

Papworth, A. J., & Williams, D. B. (2000). Stem imaging of prior austenite grain boundaries. Scripta Materialia, 42(7), 627-630. doi:10.1016/s1359-6462(99)00399-1

DOI: 10.1016/s1359-6462(99)00399-1

The oxidation behaviour of an Fe,AI, Si alloy containing uranium as an impurity, oxidised for short times at high temperatures (Journal article)

Fox, P., Ritherdon, J., & Papworth, A. J. (2000). The oxidation behaviour of an Fe,AI, Si alloy containing uranium as an impurity, oxidised for short times at high temperatures. Materials at High Temperatures, 17(4), 429-438. doi:10.1179/mht.2000.057

DOI: 10.1179/mht.2000.057