2023
Sedghi, N., McIntosh, D., Ataby, A. A., Selis, V., Al-Nuaimy, W., & Thomason, S. (2023). Enhancing asynchronous remote teaching during the COVID-19 pandemic. Developing Academic Practice, 2023(Special), 39-47. doi:10.3828/dap.2023.3DOI: 10.3828/dap.2023.3
2022
Limniou, M., Sedghi, N., Kumari, D., & Drousiotis, E. (2022). Student Engagement, Learning Environments and the COVID-19 Pandemic: A Comparison between Psychology and Engineering Undergraduate Students in the UK. EDUCATION SCIENCES, 12(10). doi:10.3390/educsci12100671DOI: 10.3390/educsci12100671
Noureddine, I. N., Sedghi, N., Wrench, J. S., Mitrovic, I. Z., Chalker, P. R., & Hall, S. (2022). <p>Structural and electrical investigation of MI<sub>2</sub>M and MI<sub>3</sub>M diodes for improved non-linear, low bias rectification</p>. SOLID-STATE ELECTRONICS, 194. doi:10.1016/j.sse.2022.108349DOI: 10.1016/j.sse.2022.108349
2021
Almalki, S., Tekin, S. B., Sedghi, N., Hall, S., & Mitrovic, I. Z. (2021). Applicability of Sc<sub>2</sub>O<sub>3</sub> versus Al<sub>2</sub>O<sub>3</sub> in MIM rectifiers for IR rectenna. SOLID-STATE ELECTRONICS, 184. doi:10.1016/j.sse.2021.108082DOI: 10.1016/j.sse.2021.108082
Noureddine, I. N., Sedghi, N., Wrench, J., Chalker, P., Mitrovic, I. Z., & Hall, S. (2021). Fabrication and modelling of MInM diodes with low turn-on voltage. SOLID-STATE ELECTRONICS, 184. doi:10.1016/j.sse.2021.108053DOI: 10.1016/j.sse.2021.108053
Mitrovic, I. Z., Almalki, S., Tekin, S. B., Sedghi, N., Chalker, P. R., & Hall, S. (n.d.). Oxides for Rectenna Technology. Materials, 14(18), 5218. doi:10.3390/ma14185218DOI: 10.3390/ma14185218
Tekin, S., Das, P., Weerakkody, A. D., Sedghi, N., Hall, S., Mitrovic, I. Z., . . . Chalker, P. R. (2021). Single and Triple Insulator Metal-Insulator-Metal Diodes for Infrared Rectennas. Solid-State Electronics. doi:10.1016/j.sse.2021.108096DOI: 10.1016/j.sse.2021.108096
Sedghi, N., Limniou, M., Al-Nuiamy, W., Sandall, I., Al Ataby, A., & Duret, D. (2021). Enhancing the engagement of large cohorts using live interactive polling and feedback. Developing Academic Practice, 2021(January), 31-50. doi:10.3828/dap.2021.6DOI: 10.3828/dap.2021.6
2020
Tekin, S. B., Das, P., Weerakkody, A. D., Sedghi, N., Hall, S., Mitrovic, I. Z., . . . Chalker, P. R. (2020). Single and Triple Insulator Tunnel Rectifiers for Infrared Energy Harvesting. In 2020 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS). doi:10.1109/EUROSOI-ULIS49407.2020.9365388DOI: 10.1109/EUROSOI-ULIS49407.2020.9365388
2019
Enhancing the engagement of large cohort of students by live interactive polling and feedback (Conference Paper)
Sedghi, N., Al-Nuaimy, W., Sandall, I., Limniou, M., Duret, D., & Al Ataby, A. (2019). Enhancing the engagement of large cohort of students by live interactive polling and feedback. In Learning and Teaching Conference. Liverpool, UK.
2018
Sandall, I., & Sedghi, N. (2018). Utilization of Dielectrophresis to position Nanowires for potential bio-sensor applications. In Semiconducting Nano Materials for Health Applications. Grenoble.
Mitrovic, I. Z., Weerakkody, D. A. D. C., Sedghi, N., Ralph, J. F., Hall, S., Dhanak, V. R., . . . Beeby, S. (2018). Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures. Applied Physics Letters, 112, 5 pages. doi:10.1063/1.4999258DOI: 10.1063/1.4999258
2017
Sedghi, N., Li, H., Brunell, I. F., Dawson, K., Guo, Y., Potter, R. J., . . . Chalker, P. R. (2017). Enhanced Switching Stability in Ta2O5 Resistive RAM by Fluorine Doping. Applied Physics Letters, 111(9). doi:10.1063/1.4991879DOI: 10.1063/1.4991879
Sedghi, N., Li, H., Brunell, I. F., Dawson, K., Potter, R. J., Guo, Y., . . . Chalker, P. R. (2017). The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM. Applied Physics Letters, 110(10), 102902-1-102902-4. doi:10.1063/1.4978033DOI: 10.1063/1.4978033
Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition (Journal article)
Jin, J., Wrench, J., Gibbon, J. T., Hesp, D., Shaw, A. P., Mitrovic, I. Z., . . . Hall, S. (2017). Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition. IEEE Transactions on Electron Devices, 64(3), 1225-1230. doi:10.1109/TED.2016.2647284DOI: 10.1109/TED.2016.2647284
Barrier tuning of atomic layer deposited Ta<sub>2</sub>O<sub>5</sub> and Al<sub>2</sub>O<sub>3</sub> in double dielectric diodes (Journal article)
Noureddine, I. N., Sedghi, N., Mitrovic, I. Z., & Hall, S. (2017). Barrier tuning of atomic layer deposited Ta<sub>2</sub>O<sub>5</sub> and Al<sub>2</sub>O<sub>3</sub> in double dielectric diodes. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 35(1). doi:10.1116/1.4974219DOI: 10.1116/1.4974219
2016
Wider Memory Window in Ta2O5 RRAM by Doping (Conference Paper)
Sedghi, N., Li, H., Brunell, I., Potter, R., Hall, S., Dawson, K., . . . Robertson, J. (2016). Wider Memory Window in Ta2O5 RRAM by Doping. In 47th IEEE Semiconductor Interface Specialists Conference. Catamaran Hotel, San Diego, CA.
Nemr Noureddine, I., Sedghi, N., Mitrovic, I. Z., & Hall, S. (2016). Barrier tuning of atomic layer deposited Ta2O5 and Al2O3 in resonant tunnelling diodes for terahertz applications. In 19th Workshop on Dielectrics in Microelectronics –WODIM. Catania, Italy.
Mitrovic, I. Z., Weerakkody, A. D., Sedghi, N., Hall, S., Ralph, J. F., Wrench, J. S., . . . Beeby, S. (2016). Tunnel-Barrier Rectifiers for Optical Nantennas. DIELECTRICS FOR NANOSYSTEMS 7: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 72(2), 287-299. doi:10.1149/07202.0287ecstDOI: 10.1149/07202.0287ecst
(Invited) Tunnel-Barrier Rectifiers for Optical Nantennas (Journal article)
Mitrovic, I. Z., Weerakkody, A. D., Sedghi, N., Hall, S., Ralph, J. F., Wrench, J. S., . . . Beeby, S. (2016). (Invited) Tunnel-Barrier Rectifiers for Optical Nantennas. ECS Meeting Abstracts, MA2016-01(16), 1011. doi:10.1149/ma2016-01/16/1011DOI: 10.1149/ma2016-01/16/1011
Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta<sub>2</sub>O<sub>5</sub>)<i><sub>x</sub></i>(Al<sub>2</sub>O<sub>3</sub>)<sub>1-<i>x</i></sub> as potential gate dielectrics for GaN/Al<i><sub>x</sub></i>Ga<sub>1-<i>x</i></sub>N/GaN high electron mobility transistors (Journal article)
Partida-Manzanera, T., Roberts, J. W., Bhat, T. N., Zhang, Z., Tan, H. R., Dolmanan, S. B., . . . Potter, R. J. (2016). Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta<sub>2</sub>O<sub>5</sub>)<i><sub>x</sub></i>(Al<sub>2</sub>O<sub>3</sub>)<sub>1-<i>x</i></sub> as potential gate dielectrics for GaN/Al<i><sub>x</sub></i>Ga<sub>1-<i>x</i></sub>N/GaN high electron mobility transistors. JOURNAL OF APPLIED PHYSICS, 119(2). doi:10.1063/1.4939298DOI: 10.1063/1.4939298
2015
Althobaiti, M., Mather, S., Sedghi, N., Dhanak, V. R., Mitrovic, I. Z., Hall, S., & Chalker, P. R. (2015). Hafnia and alumina on sulphur passivated germanium. Vacuum, 122, 306-309. doi:10.1016/j.vacuum.2015.03.017DOI: 10.1016/j.vacuum.2015.03.017
Hafnia and alumina on sulphur passivated germanium (Poster)
Althobaiti, M., Mather, S., Sedghi, N., Dhanak, V. R., Mitrovic, I. Z., Hall, S., & Chalker, P. R. (2015). Hafnia and alumina on sulphur passivated germanium. Poster session presented at the meeting of Unknown Conference. Retrieved from https://www.webofscience.com/DOI: 10.1016/j.vacuum.2015.03.017
Weerakkody, A. D., Sedghi, N., Mitrovic, I. Z., van Zalinge, H., Noureddine, I. N., Hall, S., . . . Durose, K. (2015). Enhanced low voltage nonlinearity in resonant tunneling metal-insulator-insulator-metal nanostructures. MICROELECTRONIC ENGINEERING, 147, 298-301. doi:10.1016/j.mee.2015.04.110DOI: 10.1016/j.mee.2015.04.110
Chalker, P. R., Marshall, P. A., Dawson, K., Sutcliffe, C. J., Brunell, I. F., Sedghi, N., . . . Potter, R. J. (2015). (Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films. ECS Transactions, 69(7), 139-145. doi:10.1149/06907.0139ecstDOI: 10.1149/06907.0139ecst
Weerakkody, A. D., Sedghi, N., Zhan, X., Mitrovic, I. Z., & Hall, S. (2015). Conduction mechanisms in Al-Ta<sub>2</sub>O<sub>5</sub>-Al<sub>2</sub>O<sub>3</sub>-Al rectifiers. In 2015 11TH CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME) (pp. 133-136). Retrieved from https://www.webofscience.com/
(Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films (Journal article)
Chalker, P. R., Marshall, P. A., Dawson, K., Sutcliffe, C. J., Brunell, I. F., Sedghi, N., . . . Potter, R. J. (2015). (Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films. ECS Meeting Abstracts, MA2015-02(26), 993. doi:10.1149/ma2015-02/26/993DOI: 10.1149/ma2015-02/26/993
Atomic-layer deposited thulium oxide as a passivation layer on germanium (Journal article)
Mitrovic, I. Z., Hall, S., Althobaiti, M., Hesp, D., Dhanak, V., Santoni, A., . . . Schamm-Chardon, S. (2015). Atomic-layer deposited thulium oxide as a passivation layer on germanium. Journal of Applied Physics, 117(21). doi:10.1063/1.4922121DOI: 10.1063/1.4922121
Weerakkody, A. D., Sedghi, N., Mitrovic, I. Z., van Zalinge, H., Nemr Noureddine, I., Hall, S., . . . Durose, K. (2015). Enhanced low voltage nonlinearity in resonant tunneling metal–insulator–insulator–metal nanostructures. In Microelectronic Engineering Vol. 147 (pp. 298-301). Elsevier BV. doi:10.1016/j.mee.2015.04.110DOI: 10.1016/j.mee.2015.04.110
Engineered Ta2O5/Al2O3 and Nb2O5/Al2O3 tunnel barriers for next-generation low turn-on voltage high-speed rectifiers (Poster)
Mitrovic, I., Sedghi, N., Weerakkody, D., Ralph, J. F., Hall, S., Wrench, J., & Chalker, P. R. (n.d.). Engineered Ta2O5/Al2O3 and Nb2O5/Al2O3 tunnel barriers for next-generation low turn-on voltage high-speed rectifiers. Poster session presented at the meeting of European Materials Research Society (EMRS 2015). Lille, France.
2014
Zero Bias Resonant Tunnelling Diode for Use in THz Rectenna (Presentation material)
Sedghi, N., Mitrovic, I. Z., Ralph, J. F., & Hall, S. (2014). Zero Bias Resonant Tunnelling Diode for Use in THz Rectenna. Cork, Ireland.
Physical and electrical characterization of Ce-HfO<sub>2</sub> thin films deposited by thermal atomic layer deposition (Journal article)
King, P. J., Sedghi, N., Hall, S., Mitrovic, I. Z., Chalker, P. R., Werner, M., & Hindley, S. (2014). Physical and electrical characterization of Ce-HfO<sub>2</sub> thin films deposited by thermal atomic layer deposition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 32(3). doi:10.1116/1.4826174DOI: 10.1116/1.4826174
(Invited) Interface Engineering Routes for a Future CMOS Ge-Based Technology (Journal article)
Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Sedghi, N., Hall, S., Dhanak, V. R., . . . Östling, M. (2014). (Invited) Interface Engineering Routes for a Future CMOS Ge-Based Technology. ECS Meeting Abstracts, MA2014-01(36), 1357. doi:10.1149/ma2014-01/36/1357DOI: 10.1149/ma2014-01/36/1357
Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Sedghi, N., Hall, S., Dhanak, V. R., . . . Ostling, M. (2014). Interface Engineering Routes for a Future CMOS Ge-based Technology. DIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 61(2), 73-88. doi:10.1149/06102.0073ecstDOI: 10.1149/06102.0073ecst
Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Dhanak, V. R., Linhart, W. M., Veal, T. D., . . . Dimoulas, A. (2014). Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature. Journal of Applied Physics, 115(11). doi:10.1063/1.4868091DOI: 10.1063/1.4868091
'Hafnia on sulphur passivated germanium' (Conference Paper)
Althobaiti, M., Mather, S., Sedghi, N., Dhanak, V. R., Mitrovic, I., Hall, S., & Chalker, P. (2014). 'Hafnia on sulphur passivated germanium'. In 13th European surface science Conference (pp. 1-2). Aveiro: EVC13.
Energy Harvesting Using THz Electronics (Chapter)
Hall, S., Mitrovic, I. Z., Sedghi, N., Shen, Y. -C. C., Huang, Y., & Ralph, J. F. (2014). Energy Harvesting Using THz Electronics. In FUNCTIONAL NANOMATERIALS AND DEVICES FOR ELECTRONICS, SENSORS AND ENERGY HARVESTING (pp. 241-265). doi:10.1007/978-3-319-08804-4_12DOI: 10.1007/978-3-319-08804-4_12
Erratum to: Energy Harvesting Using THz Electronics (Chapter)
Hall, S., Mitrovic, I. Z., Sedghi, N., Shen, Y. -C., Huang, Y., & Ralph, J. F. (2014). Erratum to: Energy Harvesting Using THz Electronics. In Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting (pp. E1). Springer International Publishing. doi:10.1007/978-3-319-08804-4_21DOI: 10.1007/978-3-319-08804-4_21
Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting (Chapter)
Nazarov, A., Balestra, F., Kilchytska, V., & Flandre, D. (Eds.) (2014). Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting. In . Springer International Publishing. doi:10.1007/978-3-319-08804-4DOI: 10.1007/978-3-319-08804-4
2013
Analysis of electron capture at oxide traps by electric field injection (Journal article)
Engstrom, O., Sedghi, N., Mitrovic, I. Z., & Hall, S. (2013). Analysis of electron capture at oxide traps by electric field injection. APPLIED PHYSICS LETTERS, 102(21). doi:10.1063/1.4807845DOI: 10.1063/1.4807845
Interface engineering of Ge using thulium oxide: Band line-up study (Conference Paper)
Mitrovic, I. Z., Althobaiti, M., Weerakkody, A. D., Sedghi, N., Hall, S., Dhanak, V. R., . . . Ostling, M. (2013). Interface engineering of Ge using thulium oxide: Band line-up study. In MICROELECTRONIC ENGINEERING Vol. 109 (pp. 204-207). doi:10.1016/j.mee.2013.03.160DOI: 10.1016/j.mee.2013.03.160
Low EOT GeO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> on Ge substrate using ultrathin Al deposition (Journal article)
Mather, S., Sedghi, N., Althobaiti, M., Mitrovic, I. Z., Dhanak, V., Chalker, P. R., & Hall, S. (2013). Low EOT GeO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> on Ge substrate using ultrathin Al deposition. MICROELECTRONIC ENGINEERING, 109, 126-128. doi:10.1016/j.mee.2013.03.032DOI: 10.1016/j.mee.2013.03.032
Electron trapping at the high-κ/GeO<sub>2</sub> interface: The role of bound states (Journal article)
Sedghi, N., Ralph, J. F., Mitrovic, I. Z., Chalker, P. R., & Hall, S. (2013). Electron trapping at the high-κ/GeO<sub>2</sub> interface: The role of bound states. APPLIED PHYSICS LETTERS, 102(9). doi:10.1063/1.4794544DOI: 10.1063/1.4794544
'Low EOT GeO2/Al2O3/HfO on Ge substrate using ultrathin Al deposition' (Conference Paper)
Mather, S., Sedghi, N., Althobaiti, M., Mitrovic, I. Z., Dhanak, V., Chalker, P. R., & Hall, S. (2013). 'Low EOT GeO2/Al2O3/HfO on Ge substrate using ultrathin Al deposition'. In Conference of Insulating Films on Semiconductors (pp. 126-128). Cracow: Elsevier.
'Solar energy harvesting using THz electronics.' (Invited) (Conference Paper)
Hall, S., Sedghi, N., Mitrovic, I., Ralph, J., & Huang, Y. (2013). 'Solar energy harvesting using THz electronics.' (Invited). In F. Balestra, & A. N. Nazarov (Eds.), Functional Nanomaterials and Devices (pp. 2). Kyiv: TBA.
'Towards rectennas for solar energy harvesting' (Conference Paper)
Sedghi, N., Zhang, J. W., Ralph, J. F., Huang, Y., Mitrovic, I. Z., & Hall, S. (2013). 'Towards rectennas for solar energy harvesting'. In 43rd European Solid State Device Research Conference (pp. NA). Bucharest: ESSIRC/ESSDERC. Retrieved from http://esscirc2013.imt.ro/presentations/1287_Naser_SEDGHI.pdf
Bound states within the notch of the HfO<sub>2</sub>/GeO<sub>2</sub>/Ge stack (Conference Paper)
Wang, Z., Ralph, J., Sedghi, N., Mitrovic, I. Z., & Hall, S. (2013). Bound states within the notch of the HfO<sub>2</sub>/GeO<sub>2</sub>/Ge stack. In JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Vol. 31. doi:10.1116/1.4794378DOI: 10.1116/1.4794378
Towards Rectennas for Solar Energy Harvesting (Conference Paper)
Sedghi, N., Zhang, J. W., Ralph, J. F., Huang, Y., Mitrovic, I. Z., & Hall, S. (2013). Towards Rectennas for Solar Energy Harvesting. In 2013 PROCEEDINGS OF THE EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC) (pp. 131-134). Retrieved from https://www.webofscience.com/
2012
Effect of oxygen on tuning the TiNx metal gate work function on LaLuO<sub>3</sub> (Journal article)
Mitrovic, I. Z., Przewlocki, H. M., Piskorski, K., Simutis, G., Dhanak, V. R., Sedghi, N., & Hall, S. (2012). Effect of oxygen on tuning the TiNx metal gate work function on LaLuO<sub>3</sub>. THIN SOLID FILMS, 520(23), 6959-6962. doi:10.1016/j.tsf.2012.07.082DOI: 10.1016/j.tsf.2012.07.082
On the nature of the interfacial layer in ultra-thin TiN/LaLuO<sub>3</sub> gate stacks (Journal article)
Mitrovic, I. Z., Hall, S., Sedghi, N., Simutis, G., Dhanak, V. R., Bailey, P., . . . Schubert, J. (2012). On the nature of the interfacial layer in ultra-thin TiN/LaLuO<sub>3</sub> gate stacks. JOURNAL OF APPLIED PHYSICS, 112(4). doi:10.1063/1.4746790DOI: 10.1063/1.4746790
'A Charge Trapping Model for 3-Pulse CV: the Origin of Logarithmic and Power Law Regimes in High k Dielectrics' (Conference Paper)
Sedghi, N., Dowrick, T., Mitrovic, I., & Hall, S. (2012). 'A Charge Trapping Model for 3-Pulse CV: the Origin of Logarithmic and Power Law Regimes in High k Dielectrics'. In Semiconductor Interface Specialist Conference (pp. 2). San Diego: IEEE/SISC.
'A model for hole trapping in LaLuO3 based on the 3-pulse CV technique' (Conference Paper)
Sedghi, N., Dowrick, T., Engström, O., Mitrovic, I. Z., & Hall, S. (2012). 'A model for hole trapping in LaLuO3 based on the 3-pulse CV technique'. In Workshop on Dielectric Materials (pp. NA). Dresden: NA.
'Bound States and Their Charge Occupancy within the Notch of HfO2/GeO2/Ge Stacks' (Conference Paper)
Sedghi, N., Ralph, J. F., Mitrovic, I., & Hall, S. (2012). 'Bound States and Their Charge Occupancy within the Notch of HfO2/GeO2/Ge Stacks'. In Semiconductor Interface Specialist Conference (pp. 2). San Diego: IEEE/SISC.
'Cerium-doped hafnium oxide on silicon' (Conference Paper)
Sedghi, N., Werner, M., King, P. J., Hindley, S., Davey, W. M., Mitrovic, I. Z., . . . Hall, S. (2012). 'Cerium-doped hafnium oxide on silicon'. In IEEE Semiconductor Interface Specialists Conference (pp. NA). San Diego: IEEE.
'Deposition dependent study of silicon nitride films for MIM application' (Conference Paper)
Davey, W. M., Sedghi, N., Dowrick, T., Mitrovic, I. Z., Connor, S. D., Mason, P. H., . . . Hall, S. (2012). 'Deposition dependent study of silicon nitride films for MIM application'. In Workshop on Dielectric Materials (pp. NA). Dresden: NA.
2011
Study of interfaces and band offsets in TiN/amorphous LaLuO<sub>3</sub> gate stacks (Journal article)
Mitrovic, I. Z., Simutis, G., Davey, W. M., Sedghi, N., Hall, S., Dhanak, V. R., . . . Schubert, J. (2011). Study of interfaces and band offsets in TiN/amorphous LaLuO<sub>3</sub> gate stacks. MICROELECTRONIC ENGINEERING, 88(7), 1495-1498. doi:10.1016/j.mee.2011.03.051DOI: 10.1016/j.mee.2011.03.051
Investigation of Electron and Hole Charge Trapping in LaLuO<sub>3</sub> Stack MOS Capacitor Using the Three-Pulse CV Technique (Journal article)
Sedghi, N., Mitrovic, I. Z., Lopes, J. M. J., Schubert, J., & Hall, S. (2011). Investigation of Electron and Hole Charge Trapping in LaLuO<sub>3</sub> Stack MOS Capacitor Using the Three-Pulse CV Technique. SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 11, 35(4), 531-543. doi:10.1149/1.3572303DOI: 10.1149/1.3572303
Investigation of Electron and Hole Charge Trapping in LaLuO<sub>3</sub> Stack MOS Capacitor Using the 3-Pulse CV Technique (Journal article)
Sedghi, N., Mitrovic, I., Lopes, J., Schubert, J., & Hall, S. (2011). Investigation of Electron and Hole Charge Trapping in LaLuO<sub>3</sub> Stack MOS Capacitor Using the 3-Pulse CV Technique. ECS Meeting Abstracts, MA2011-01(22), 1393. doi:10.1149/ma2011-01/22/1393DOI: 10.1149/ma2011-01/22/1393
<i>CV</i> measurements on LaLuO<sub>3</sub> stack metal-oxide-semiconductor capacitor using a new three-pulse technique (Journal article)
Sedghi, N., Mitrovic, I. Z., Hall, S., Lopes, J. M. J., & Schubert, J. (2011). <i>CV</i> measurements on LaLuO<sub>3</sub> stack metal-oxide-semiconductor capacitor using a new three-pulse technique. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 29(1). doi:10.1116/1.3533267DOI: 10.1116/1.3533267
'Investigation of electron and hole charge trapping in LaLuO3 stack MOS capacitor using the three-pulse CV technique' (Conference Paper)
Sedghi, N., Mitrovic, I. Z., Lopes, J. M. J., Schubert, J., & Hall, S. (2011). 'Investigation of electron and hole charge trapping in LaLuO3 stack MOS capacitor using the three-pulse CV technique'. In Electrochemistry Society Meeting (pp. NA). Montreal: Electrochemistry Society.
'Reliability Studies on Ta2O5 High κ Dielectric MIM Capacitors Prepared by Wet Anodization' (Journal article)
Sedghi, N., Davey, W. M., Mitrovic, I., & Hall, S. (2011). 'Reliability Studies on Ta2O5 High κ Dielectric MIM Capacitors Prepared by Wet Anodization'. Jnl. Vac. Sci. B, 29(1), 1-8. Retrieved from http://avspublications.org/
'Study of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacks' (Conference Paper)
Mitrovic, I. Z., Simutis, G., Davey, W. M., Sedghi, N., Hall, S., Dhanak, V. R., . . . Schubert, J. (2011). 'Study of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacks'. In Insulating Films on Semiconductors (pp. NA). Grenoble: NA.
'Systematic investigation of Ge surface passivation with LaGeOx' (Conference Paper)
Mitrovic, I. Z., Hall, S., Sedghi, N., McLeod, I., Spencer, P., Hesp, D., . . . Tsoutsou, D. (2011). 'Systematic investigation of Ge surface passivation with LaGeOx'. In IEEE Semiconductor Interface Specialists Conference (pp. NA). Arlington: IEEE.
Reliability studies on Ta<sub>2</sub>O<sub>5</sub> high-κ dielectric metal-insulator-metal capacitors prepared by wet anodization (Journal article)
Sedghi, N., Davey, W., Mitrovic, I. Z., & Hall, S. (2011). Reliability studies on Ta<sub>2</sub>O<sub>5</sub> high-κ dielectric metal-insulator-metal capacitors prepared by wet anodization. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 29(1). doi:10.1116/1.3532823DOI: 10.1116/1.3532823
2010
'CV Measurements on LaLuO3 Stack MOS Capacitor Using a New 3-Pulse Technique' (Conference Paper)
Sedghi, N., Davey, W., Mitrovic, I., Lopes, J. M. J., Schubert, J., & Hall, S. (2010). 'CV Measurements on LaLuO3 Stack MOS Capacitor Using a New 3-Pulse Technique'. In Workshop on Dielectrics in Microelectronics (pp. 57). Bratislava: Wodim.
'Charge trapping in LaLuO3 MOS capacitors using a new 3-pulse CV technique' (Conference Paper)
Sedghi, N., Davey, W., Mitrovic, I. Z., Hall, S., Lopes, J. M. J., & Schubert, J. (2010). 'Charge trapping in LaLuO3 MOS capacitors using a new 3-pulse CV technique'. In IEEE Semiconductor Interface Specialists Conference (pp. NA). San Diego: IEEE.
'Reliability Studies on Ta2O5 High κ Dielectric MIM Capacitors Prepared by Wet Anodization' (Conference Paper)
Sedghi, N., Davey, W., Mitrovic, I., & Hall, S. (2010). 'Reliability Studies on Ta2O5 High κ Dielectric MIM Capacitors Prepared by Wet Anodization'. In Workshop on Dielectrics in Microelectronics (pp. 127). Bratislava: ECS.
2009
'Organic non volatile memory thin film transistor using double dielectric gate insulator' (Conference Paper)
Sedghi, N., & Eccleston, W. (2009). 'Organic non volatile memory thin film transistor using double dielectric gate insulator'. In International Conference on Organic Electronics (pp. NA). Liverpool: NA.
2008
Fabrication and modelling of sandwich dielectrics for logic and non-volatile memory (Conference Paper)
Raja, M., Sedghi, N., Donaghy, D., & Eccleston, W. (2008). Fabrication and modelling of sandwich dielectrics for logic and non-volatile memory. In First International Symposium on Flexible Electronics (ISFE) (pp. Presentation only). Tarragona: Presentation only.
2007
Conduction mechanisms in conjugated polymers (Conference Paper)
Sedghi, N., Donaghy, D., Raja, M., & Eccleston, W. (2007). Conduction mechanisms in conjugated polymers. In Forum 2007 be-flexible (pp. Presentation only). Munich: Presentation only.
2006
Experimental observation of the density of localized trapping levels in organic semiconductors (Journal article)
Sedghi, N., Donaghy, D., Raja, M., Badriya, S., Higgins, S. J., & Eccleston, W. (2006). Experimental observation of the density of localized trapping levels in organic semiconductors. Journal of Non-Crystalline Solids, 352(9-20), 1641-1643. doi:10.1016/j.jnoncrysol.2005.10.049DOI: 10.1016/j.jnoncrysol.2005.10.049
'Analysis of organic devices based on exponential distribution of localized states' (Conference Paper)
Sedghi, N., Donaghy, D., Raja, M., Badriya, S., Higgins, D. J., & Eccleston, W. (2006). 'Analysis of organic devices based on exponential distribution of localized states'. In International Conference on Organic Electronics (ICOE) (pp. Presentation only). Eindhoven, The Netherlands: Presentation only.
'Experimental observation of the density of localized trapping levels in organic semiconductors' (Conference Paper)
Sedghi, N., Donaghy, D., Raja, M., Badriya, S., Higgins, D. J., & Eccleston, W. (2006). 'Experimental observation of the density of localized trapping levels in organic semiconductors'. In International Conference on Organic Electronics (pp. Presentation only). Eindhoven, The Netherlands: Presentation only.
'Polythiophenes for Organic Electronics and Sensing' (Conference Paper)
Higgins, S. J., Di Lucrezia, R., Brown, S. J., Mouffouk, F., Badriya, S., Rajapakse, R. G. M., . . . Lloyd, G. C. R. (2006). 'Polythiophenes for Organic Electronics and Sensing'. In Plenary Lecture (pp. Not known). Sri Lanka: Not known.
'Polythiophenes for Organic Electronics and Sensing' (Conference Paper)
Higgins, S. J., Di Lucrezia, R., Brown, S. J., Mouffouk, F., Badriya, S., Rajapakse, R. G. M., . . . Lloyd, G. C. R. (2006). 'Polythiophenes for Organic Electronics and Sensing'. In Discussion Meet on the Role of Electrochemistry in Biosensors, Nanomaterials, Fuel Cells and Ionic Liquids (pp. Not known). Mumbai, India: Not known.
'Variable temperature capacitance-voltage measurements to investigate the density of localized trapping levels in organic semiconductors' (Conference Paper)
Sedghi, N., Donaghy, D., Raja, M., Badriya, S., Higgins, S. J., & Eccleston, W. (2006). 'Variable temperature capacitance-voltage measurements to investigate the density of localized trapping levels in organic semiconductors'. In 2005 MRS Fall Meeting Vol. 905E. Boston, USA: Material Research Society.
2005
Functionalized Regioregular Polyalkylthiophenes for Biosensing Applications (Conference Paper)
Higgins, S. J., Mouffouk, F., Brown, S. J., Sedghi, N., Eccleston, B., & Reeman, S. (2005). Functionalized Regioregular Polyalkylthiophenes for Biosensing Applications. In MRS Proceedings Vol. 871. Springer Science and Business Media LLC. doi:10.1557/proc-871-i1.3DOI: 10.1557/proc-871-i1.3
Experimental observation of the density of localized trapping levels in organic semiconductors (Conference Paper)
Sedghi, N., Donaghy, D., Raja, M., Badriya, S., Higgins, S. J., & Eccleston, W. (2005). Experimental observation of the density of localized trapping levels in organic semiconductors. In 21st Conferences on Amorphous and Nanocrystalline Semiconductors (ICANS21) (pp. Presentation only). Lisbon: Presentation only.
Regioregular polyalkylthiophenes and related systems for protein and DNA oligomer sensing (Conference Paper)
Higgins, S. J., Mouffouk, F., Brown, S. J., Sedghi, N., Eccleston, W., & Reeman, S. (2005). Regioregular polyalkylthiophenes and related systems for protein and DNA oligomer sensing. In RSC International Materials Chemistry Conference (pp. Presentation only). Edinburgh: Presentation only.
Schottky Diodes: Modelling for real applications in polymer devices (Conference Paper)
Raja, M., Sedghi, N., Badriya, S., Higgins, S. J., Lloyd, G. C. R., & Eccleston, W. (2005). Schottky Diodes: Modelling for real applications in polymer devices. In Intrnational Conference on Organic Eelctronics (pp. Presentation only). Eindhoven: Presentation only.
Using high frequency CV measurements to investigate inversion in organic semiconductors (Conference Paper)
Sedghi, N., Raja, M., Badriya, S., Higgins, S. J., Lloyd, G. C. R., & Eccleston, W. (2005). Using high frequency CV measurements to investigate inversion in organic semiconductors. In Intrnational Conference on Organic Eelctronics (pp. Presentation only). Eindhoven: Presentation only.
Variable Temperature Capacitance-Voltage Measurements to Investigate the Density of Localized Trapping Levels in Organic Semiconductors (Journal article)
Sedghi, N., Donaghy, D., Raja, M., Badriya, S., Higgins, S. J., & Eccleston, B. (2005). Variable Temperature Capacitance-Voltage Measurements to Investigate the Density of Localized Trapping Levels in Organic Semiconductors. MRS Proceedings, 905. doi:10.1557/proc-0905-dd06-02DOI: 10.1557/proc-0905-dd06-02
2004
A regioregular polyalkylthiophene bearing covalently-linked biotin, and its interaction with avidin in solution and in thin films. (Journal article)
Mouffouk, F., Higgins, S. J., Brown, S. J., Sedghi, N., Eccleston, B., & Reeman, S. (2004). A regioregular polyalkylthiophene bearing covalently-linked biotin, and its interaction with avidin in solution and in thin films.. Chemical communications (Cambridge, England), (20), 2314-2315. doi:10.1039/b408935aDOI: 10.1039/b408935a
Practicability of the development of design tools for polymer TFT circuit development (Journal article)
Raja, M., Sedghi, N., Donaghy, D., Lloyd, G., Badriya, S., Higgins, S. J., & Eccleston, B. (2004). Practicability of the development of design tools for polymer TFT circuit development. SPIE Proceedings. doi:10.1117/12.547722DOI: 10.1117/12.547722
2003
A TFT strategy for polymer circuits (Conference Paper)
Sedghi, N., Raja, M., Lloyd, G. C. R., Liversedge, I., Higgins, S. J., & Eccleston, B. (2003). A TFT strategy for polymer circuits. In Materials Research Society Symposium - Proceedings Vol. 734 (pp. 365-370).
The benefits of high-K dielectrics for polymer TFTs (Conference Paper)
Raja, M., Sedghi, N., Higgins, S. J., & Eccleston, W. (2003). The benefits of high-K dielectrics for polymer TFTs. In Materials Research Society Symposium - Proceedings Vol. 734 (pp. 213-218).
2002
Conduction processes in conjugated, highly regio-regular, high molecular mass, poly(3-hexylthiophene) thin-film transistors (Journal article)
Raja, M., Lloyd, G. C. R., Sedghi, N., Eccleston, W., Di Lucrezia, R., & Higgins, S. J. (2002). Conduction processes in conjugated, highly regio-regular, high molecular mass, poly(3-hexylthiophene) thin-film transistors. Journal of Applied Physics, 92(3), 1441-1445. doi:10.1063/1.1490622DOI: 10.1063/1.1490622
A TFT Strategy for Polymer Circuits (Journal article)
Sedghi, N., Raja, M., Lloyd, G. C. R., Liversedge, I., Higgins, S. J., & Eccleston, B. (2002). A TFT Strategy for Polymer Circuits. MRS Proceedings, 734. doi:10.1557/proc-734-b9.59DOI: 10.1557/proc-734-b9.59
Critical Considerations in Polymer Thin-Film Transistor (TFT) Dielectrics (Conference Paper)
Raja, M., Lloyd, G., Sedghi, N., Higgins, S. J., & Eccleston, W. (2002). Critical Considerations in Polymer Thin-Film Transistor (TFT) Dielectrics. In MRS Proceedings Vol. 725. Springer Science and Business Media LLC. doi:10.1557/proc-725-p6.5DOI: 10.1557/proc-725-p6.5
Critical consideration in polymer Thin-film transistor (TFT) dielectrics (Journal article)
Raja, M., Lloyd, G. C. R., Sedghi, N., Di Lucrezia, R., Higgins, S. J., & Eccleston, W. (2002). Critical consideration in polymer Thin-film transistor (TFT) dielectrics. Material Research Society (MRS) proceedings, 725, P6.5. Retrieved from http://journals.cambridge.org/action/displayJournal?jid=OPL
Improved thin film transistor (TFT) performance using fractionated poly-3-hexylthiophene (P3HT) (Journal article)
Raja, M., Lloyd, G., Sedghi, N., Di Lucrezia, R., Higgins, S. J., & Eccleston, W. (2002). Improved thin film transistor (TFT) performance using fractionated poly-3-hexylthiophene (P3HT). Materials Research Society Symposium - Proceedings, 708, 423-428.
Increasing the carrier mobility in P3HT by doping for use in Schottky barriers TFTs (Conference Paper)
Lloyd, G. C. R., Sedghi, N., Raja, M., Di Lucrezia, R., Higgins, S., & Eccleston, W. (2002). Increasing the carrier mobility in P3HT by doping for use in Schottky barriers TFTs. In Materials Research Society Symposium - Proceedings Vol. 708 (pp. 429-434).
The Benefits of High-<i>K</i> dielectrics for Polymer TFTs (Journal article)
Raja, M., Sedghi, N., Higgins, S. J., & Eccleston, W. (2002). The Benefits of High-<i>K</i> dielectrics for Polymer TFTs. MRS Proceedings, 734. doi:10.1557/proc-734-b9.1DOI: 10.1557/proc-734-b9.1
2001
The properties of MOS structures using conjugated polymers as the semiconductor (Journal article)
Lloyd, G., Raja, M., Sellers, I., Sedghi, N., Di Lucrezia, R., Higgins, S., & Eccleston, B. (2001). The properties of MOS structures using conjugated polymers as the semiconductor. Microelectronic Engineering, 59(1-4), 323-328. doi:10.1016/s0167-9317(01)00617-7DOI: 10.1016/s0167-9317(01)00617-7
Density of States in a-Si:H from SCLC and Its Application in Modeling a Vertical TFT (Journal article)
Sedghi, N., & Eccleston, B. (2001). Density of States in a-Si:H from SCLC and Its Application in Modeling a Vertical TFT. MRS Proceedings, 664. doi:10.1557/proc-664-a26.2.1DOI: 10.1557/proc-664-a26.2.1
Improved Thin Film Transistor (TFT) performance using fractionated Poly-3-hexylthiophene (P3HT) (Journal article)
Raja, M., Lloyd, G., Sedghi, N., Lucrezia, R. D., Higgins, S. J., & Eccleston, W. (2001). Improved Thin Film Transistor (TFT) performance using fractionated Poly-3-hexylthiophene (P3HT). MRS Proceedings, 708. doi:10.1557/proc-708-bb10.56DOI: 10.1557/proc-708-bb10.56
Increasing the Carrier Mobility in P3HT by Doping for use in Schottky Barrier TFTs (Journal article)
Lloyd, G. C. R., Sedghi, N., Raja, M., Lucrezia, R. D., Higgins, S., & Eccleston, W. (2001). Increasing the Carrier Mobility in P3HT by Doping for use in Schottky Barrier TFTs. MRS Proceedings, 708. doi:10.1557/proc-708-bb10.57DOI: 10.1557/proc-708-bb10.57
Undated
Engineered tunnel-barrier terahertz rectifiers for optical nantennas (Presentation material)
Mitrovic, I., Sedghi, N., Weerakkody, D., Ralph, J. F., Hall, S., Wrench, J., . . . Beeby, S. (n.d.). Engineered tunnel-barrier terahertz rectifiers for optical nantennas. San Jose, CA, USA.
