Dr John Marsland BSc(Hons) PhD

Senior Lecturer School of Electrical Engineering, Electronics and Computer Science

Publications

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2012

Evaluating the generalisation capability of a CMOS based synapse (Journal article)

Ghani, A., McDaid, L., Belatreche, A., Hall, S., Huang, S., Marsland, J., . . . Smith, A. (2012). Evaluating the generalisation capability of a CMOS based synapse. Neurocomputing, 83, 188-197. doi:10.1016/j.neucom.2011.12.010

DOI: 10.1016/j.neucom.2011.12.010

2011

Comparison of different models of non-local impact ionization for low noise avalanche photodiodes (Journal article)

Marsland, J. S. (2011). Comparison of different models of non-local impact ionization for low noise avalanche photodiodes. Retrieved from http://dx.doi.org/10.1002/pssc.201084034

'Empirical Formulae for Excess Noise Factor with Dead Space for Single Carrier Multiplication' (Journal article)

Dehwah, A. H., Ajia, I. A., & Marsland, J. S. (2011). 'Empirical Formulae for Excess Noise Factor with Dead Space for Single Carrier Multiplication'. Fluctuation and Noise Letters, 10(3), 315-321.

'Evaluating the Training Dynamic of a CMOS based Synapse' (Conference Paper)

Ghani, A., McDaid, L. J., Belatreche, A., Hall, S., Dowrick, T., Huang, S., . . . Smith, A. (2011). 'Evaluating the Training Dynamic of a CMOS based Synapse'. In International Joint Conference on Neural Networks, (pp. 123-130). California: IEEE.

2009

Evidence of non-local impact ionization in CNT and HgCdTe (Conference Paper)

Marsland, J. S., & Atanu, A. G. (2009). Evidence of non-local impact ionization in CNT and HgCdTe. In Journal of Physics: Conference Series Vol. 193 (pp. 012025). IOP Publishing. doi:10.1088/1742-6596/193/1/012025

DOI: 10.1088/1742-6596/193/1/012025

Impact ionization in semiconductors: recent progress on non‐local effects (Journal article)

Marsland, J. S. (2009). Impact ionization in semiconductors: recent progress on non‐local effects. physica status solidi (a), 206(5), 874-879. doi:10.1002/pssa.200881317

DOI: 10.1002/pssa.200881317

Resonance effects on gain and noise in avalanche photodiodes (Journal article)

Marsland, J. S. (2009). Resonance effects on gain and noise in avalanche photodiodes. Journal of Materials Science: Materials in Electronics, 20(S1), 514-518. doi:10.1007/s10854-008-9714-1

DOI: 10.1007/s10854-008-9714-1

2008

EMBRACE: Emulating Biologically-Inspired architectures on Hardware (Journal article)

EMBRACE: Emulating Biologically-Inspired architectures on Hardware (2008). Proceedings of the 9th Wseas International Conference on Neural Networks (Nn' 08), 167-172.

2003

Lucky drift model for non-local impact ionisation incorporating a soft threshold energy (Journal article)

Marsland, J. S. (2003). Lucky drift model for non-local impact ionisation incorporating a soft threshold energy. IEE Proceedings - Optoelectronics, 150(2), 119-124. doi:10.1049/ip-opt:20030383

DOI: 10.1049/ip-opt:20030383

2002

Nonlocal impact ionisation coefficients derived from Monte Carlo calculations (Journal article)

Marsland, J. S. (2002). Nonlocal impact ionisation coefficients derived from Monte Carlo calculations. Electronics Letters, 38(1), 55. doi:10.1049/el:20020025

DOI: 10.1049/el:20020025

1997

A unified framework for connectionist models (Journal article)

Yildirim, T., & Marsland, J. S. (1997). A unified framework for connectionist models. 4TH NEURAL COMPUTATION AND PSYCHOLOGY WORKSHOP, LONDON, 9-11 APRIL 1997, 26-39.

Improved back propagation training algorithm using conic section functions (Journal article)

Yildirim, T., Marsland, J. S., & IEEE. (1997). Improved back propagation training algorithm using conic section functions. 1997 IEEE INTERNATIONAL CONFERENCE ON NEURAL NETWORKS, VOLS 1-4, 1078-1081.

1996

A conic section function network synapse and neuron implementation in VLSI hardware (Journal article)

Yildirim, T., Marsland, J. S., & IEEE. (1996). A conic section function network synapse and neuron implementation in VLSI hardware. ICNN - 1996 IEEE INTERNATIONAL CONFERENCE ON NEURAL NETWORKS, VOLS. 1-4, 974-979.

1995

Neural network implementation using a single MOST per synapse. (Journal article)

Johnson, D. E., Marsland, J. S., & Eccleston, W. (1995). Neural network implementation using a single MOST per synapse.. IEEE transactions on neural networks, 6(4), 1008-1011. doi:10.1109/72.392265

DOI: 10.1109/72.392265

CHARGE TRAPPING AND INTERFACE STATE GENERATION IN RAPID THERMAL PROCESSED OXIDE AND NITRIDED-OXIDE MOS CAPACITORS BY ELECTRON PHOTOINJECTION FROM AL GATE AND SI SUBSTRATE (Journal article)

YUAN, X. J., MARSLAND, J. S., ECCLESTON, W., BOUVET, D., MI, J., & DUTOIT, M. (1995). CHARGE TRAPPING AND INTERFACE STATE GENERATION IN RAPID THERMAL PROCESSED OXIDE AND NITRIDED-OXIDE MOS CAPACITORS BY ELECTRON PHOTOINJECTION FROM AL GATE AND SI SUBSTRATE. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 142(3), 1021-1024.

Study of oxide field and electron energy dependence of interface-state generation in MOS structure by electron injection from Al gate and Si substrate (Journal article)

Yuan, X. J., & Marsland, J. S. (1995). Study of oxide field and electron energy dependence of interface-state generation in MOS structure by electron injection from Al gate and Si substrate. PROCEEDINGS OF THE FOURTH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, A416-A418.

1994

Charge trapping and polarity dependence of interface state generation in nitrided oxide gate dielectric by electron photoinjection (Journal article)

Yuan, X. -J., Eccleston, W., Mi, J., Marsland, J. S., Bouvet, D., & Dutoit, M. (1994). Charge trapping and polarity dependence of interface state generation in nitrided oxide gate dielectric by electron photoinjection. Electronics Letters, 30(14), 1180-1181. doi:10.1049/el:19940748

DOI: 10.1049/el:19940748

1993

Substrate hot electron injection modelling based on lucky drift theory (Journal article)

Yuan, X. -J., Marsland, J. S., & Eccleston, W. (1993). Substrate hot electron injection modelling based on lucky drift theory. Microelectronic Engineering, 22(1-4), 261-264. doi:10.1016/0167-9317(93)90169-6

DOI: 10.1016/0167-9317(93)90169-6

1992

Lucky drift estimation of excess noise factor for conventional avalanche photodiodes including the dead space effect (Journal article)

Marsland, J. S., Woods, R. C., & Brownhill, C. A. (1992). Lucky drift estimation of excess noise factor for conventional avalanche photodiodes including the dead space effect. IEEE Transactions on Electron Devices, 39(5), 1129-1135. doi:10.1109/16.129093

DOI: 10.1109/16.129093

1991

CORRECTION (Journal article)

MARSLAND, J. S. (1991). CORRECTION. ELECTRONICS LETTERS, 27(25), 2399.

TEMPERATURE-DEPENDENCE OF IONIZATION COEFFICIENTS IN SILICON DERIVED FROM PHYSICAL MODEL (Journal article)

MARSLAND, J. S. (1991). TEMPERATURE-DEPENDENCE OF IONIZATION COEFFICIENTS IN SILICON DERIVED FROM PHYSICAL MODEL. ELECTRONICS LETTERS, 27(22), 1997-1998.

1990

On the effect of ionization dead spaces on avalanche multiplication and noise for uniform electric fields (Journal article)

Marsland, J. S. (1990). On the effect of ionization dead spaces on avalanche multiplication and noise for uniform electric fields. Journal of Applied Physics, 67(4), 1929-1933. doi:10.1063/1.345596

DOI: 10.1063/1.345596

Power series approximation used in soft threshold lucky drift model of impact ionisation (Journal article)

Marsland, J. S. (1990). Power series approximation used in soft threshold lucky drift model of impact ionisation. Semiconductor Science and Technology, 5(2), 177-182. doi:10.1088/0268-1242/5/2/007

DOI: 10.1088/0268-1242/5/2/007

ESTIMATION OF NOISE-FIGURE FOR CONVENTIONAL AND MULTILAYERED AVALANCHE PHOTODIODES USING THE LUCKY DRIFT MODEL (Journal article)

MARSLAND, J. S., WOODS, R. C., BROWNHILL, C. A., & GOULD, S. (1990). ESTIMATION OF NOISE-FIGURE FOR CONVENTIONAL AND MULTILAYERED AVALANCHE PHOTODIODES USING THE LUCKY DRIFT MODEL. ESSDERC 90, 567-570.

1989

The electron impact ionization rate and breakdown voltage in GaAs/Ga/sub 0.7/Al/sub 0.3/As MQW structures (Journal article)

David, J. P. R., Marsland, J. S., & Roberts, J. S. (1989). The electron impact ionization rate and breakdown voltage in GaAs/Ga/sub 0.7/Al/sub 0.3/As MQW structures. IEEE Electron Device Letters, 10(7), 294-296. doi:10.1109/55.29657

DOI: 10.1109/55.29657

1988

CORRECTION (Journal article)

MARSLAND, J. S. (1988). CORRECTION. IEE PROCEEDINGS-J OPTOELECTRONICS, 135(2), 165.

1987

LUCKY DRIFT MODELS OF MULTILAYERED STRUCTURES AND APPROXIMATE FORMS OF LUCKY DRIFT EXPRESSIONS (Journal article)

MARSLAND, J. S., & WOODS, R. C. (1987). LUCKY DRIFT MODELS OF MULTILAYERED STRUCTURES AND APPROXIMATE FORMS OF LUCKY DRIFT EXPRESSIONS. IEE PROCEEDINGS-J OPTOELECTRONICS, 134(6), 313-322.

A lucky drift model, including a soft threshold energy, fitted to experimental measurements of ionization coefficients (Journal article)

Marsland, J. S. (1987). A lucky drift model, including a soft threshold energy, fitted to experimental measurements of ionization coefficients. Solid-State Electronics, 30(1), 125-132. doi:10.1016/0038-1101(87)90041-4

DOI: 10.1016/0038-1101(87)90041-4