2023
McIntosh, D., Al-Nuaimy, W., Ataby, A. A., Sandall, I., Selis, V., & Allen, S. (n.d.). Gamification Approaches for Improving Engagement and Learning in Small and Large Engineering Classes. International Journal of Information and Education Technology, 13(9), 1328-1337. doi:10.18178/ijiet.2023.13.9.1935DOI: 10.18178/ijiet.2023.13.9.1935
Comparison of Bio Sensing Techniques for VEGF (Conference Paper)
Alshammari, A., Hulme, S., Zalinge, H. V., & Sandall, I. (2023). Comparison of Bio Sensing Techniques for VEGF. In 2023 IEEE BioSensors Conference (BioSensors). IEEE. doi:10.1109/biosensors58001.2023.10280896DOI: 10.1109/biosensors58001.2023.10280896
Alshammari, A., van Zalinge, H., & Sandall, I. (2023). In Situ Monitoring of Aptamer-Protein Binding on a ZnO Surface Using Spectroscopic Ellipsometry.. Sensors (Basel, Switzerland), 23(14), 6353. doi:10.3390/s23146353DOI: 10.3390/s23146353
2022
Laumier, S., Farrow, T., van Zalinge, H., Seravalli, L., Bosi, M., & Sandall, I. (2022). Selection and Functionalization of Germanium Nanowires for Bio- Sensing. ACS OMEGA. doi:10.1021/acsomega.2c04775DOI: 10.1021/acsomega.2c04775
Cao, Z., Hulme, S., Veal, T. D., Ashwin, M. J., & Sandall, I. (n.d.). GaSbBi Metal Semiconductor Metal Detectors for Mid-Infrared Sensing. Frontiers in Electronic Materials, 2. doi:10.3389/femat.2022.895959DOI: 10.3389/femat.2022.895959
Farrow, T., Laumier, S., Sandall, I., & van Zalinge, H. (n.d.). An Aptamer-Functionalised Schottky-Field Effect Transistor for the Detection of Proteins. Biosensors, 12(5), 347. doi:10.3390/bios12050347DOI: 10.3390/bios12050347
2021
Sedghi, N., Limniou, M., Al-Nuiamy, W., Sandall, I., Al Ataby, A., & Duret, D. (2021). Enhancing the engagement of large cohorts using live interactive polling and feedback. Developing Academic Practice, 2021(January), 31-50. doi:10.3828/dap.2021.6DOI: 10.3828/dap.2021.6
2020
Cao, Z., Ashwin, M., Veal, T., Sandall, I., & IEEE. (2020). GaSbBi metal-semiconductor-metal photodetectors for mid-infrared sensing. In 2020 IEEE PHOTONICS CONFERENCE (IPC). Retrieved from http://gateway.webofknowledge.com/
Suppression of Surface Leakage Currents in InAs Avalanche Photodiodes via Sputtering of High-<i>k</i> Dielectric Layers (Journal article)
Cao, Z., Mitrovic, I. Z., & Sandall, I. (2020). Suppression of Surface Leakage Currents in InAs Avalanche Photodiodes via Sputtering of High-<i>k</i> Dielectric Layers. IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(10), 4269-4273. doi:10.1109/TED.2020.3012122DOI: 10.1109/TED.2020.3012122
Mumtaz, A., Milanova, M., Sandall, I., Cheetham, K., Cao, Z., Bilton, M., . . . Durose, K. (2020). GaAsSbN for Multi-Junction Solar Cells. In 2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) (pp. 1799-1803). doi:10.1109/pvsc45281.2020.9300524DOI: 10.1109/pvsc45281.2020.9300524
2019
Cao, Z., Veal, T. D., Ashwin, M. J., Dawson, K., & Sandall, I. (2019). Influence of annealing on the electrical characteristic of GaSbBi Schottky diodes. In JOURNAL OF APPLIED PHYSICS Vol. 126. doi:10.1063/1.5108870DOI: 10.1063/1.5108870
Enhancing the engagement of large cohort of students by live interactive polling and feedback (Conference Paper)
Sedghi, N., Al-Nuaimy, W., Sandall, I., Limniou, M., Duret, D., & Al Ataby, A. (2019). Enhancing the engagement of large cohort of students by live interactive polling and feedback. In Learning and Teaching Conference. Liverpool, UK.
2018
Sandall, I., & Sedghi, N. (2018). Utilization of Dielectrophresis to position Nanowires for potential bio-sensor applications. In Semiconducting Nano Materials for Health Applications. Grenoble.
2017
Hole density and acceptor-type defects in MBE-grown GaSb<sub>1-x</sub>Bi<sub>x</sub> (Journal article)
Segercrantz, N., Slotte, J., Makonnen, I., Tuomisto, F., Sandall, I. C., Ashwin, M. J., & Veal, T. D. (2017). Hole density and acceptor-type defects in MBE-grown GaSb1-x Bi x. Journal of Physics D: Applied Physics, 50(29), 6 pages. doi:10.1088/1361-6463/aa779aDOI: 10.1088/1361-6463/aa779a
Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors (Journal article)
Anyebe, E., Sandall, I., Jin, Z., Sanchez, A., Rajpalke, M., Veal, T., . . . Zhuang, Q. (2017). Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors. Scientific Reports, 7. doi:10.1038/srep46110DOI: 10.1038/srep46110
2016
Velichko, A. V., Kudrynskyi, Z. R., Di Paola, D. M., Makarovskiy, O., Kesaria, M., Krier, A., . . . Patanè, A. (2016). Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters, 109(18), 4 pages. doi:10.1063/1.4967381DOI: 10.1063/1.4967381
White, B. S., Sandall, I. C., Zhou, X., Krysa, A., McEwan, K., David, J. P. R., & Tan, C. H. (2016). High-Gain InAs Planar Avalanche Photodiodes. JOURNAL OF LIGHTWAVE TECHNOLOGY, 34(11), 2639-2644. doi:10.1109/JLT.2016.2531278DOI: 10.1109/JLT.2016.2531278
Butera, S., Vines, P., Tan, C. H., Sandall, I., & Buller, G. S. (2016). Picosecond laser ranging at wavelengths up to 2.4 μm using an InAs avalanche photodiode. ELECTRONICS LETTERS, 52(5), 385-386. doi:10.1049/el.2015.3995DOI: 10.1049/el.2015.3995
Tan, C. H., Sandall, I. C., Zhou, X., & Krishna, S. (2016). InAs-QDIP hybrid broadband infrared photodetector. MRS ADVANCES, 1(48), 3301-3306. doi:10.1557/adv.2016.457DOI: 10.1557/adv.2016.457
2015
Planar InAs Avalanche Photodiodes (Conference Paper)
White, B. S., Sandall, I. C., & Tan, C. H. (2015). Planar InAs Avalanche Photodiodes. In 2015 PHOTONICS CONFERENCE (IPC). Retrieved from https://www.webofscience.com/
White, B. S., Sandall, I. C., David, J. P. R., & Tan, C. H. (2015). InAs Diodes Fabricated Using Be Ion Implantation. IEEE TRANSACTIONS ON ELECTRON DEVICES, 62(9), 2928-2932. doi:10.1109/TED.2015.2456434DOI: 10.1109/TED.2015.2456434
Velichko, A. V., Patane, A., Capizzi, M., Sandall, I. C., Giubertoni, D., Makarovsky, O., . . . Tan, C. H. (2015). H-tailored surface conductivity in narrow band gap In(AsN). APPLIED PHYSICS LETTERS, 106(2). doi:10.1063/1.4906111DOI: 10.1063/1.4906111
2014
InAs APD with solid state photomultiplier characteristics (Conference Paper)
Sandall, I., White, B., & Tan, C. H. (2014). InAs APD with solid state photomultiplier characteristics. In 2014 IEEE PHOTONICS CONFERENCE (IPC) (pp. 354-355). Retrieved from https://www.webofscience.com/
InAsBi photodiode operating in the MWIR (Conference Paper)
Sandall, I. C., Bastiman, F., White, B., Richards, R., David, J., & Tan, C. H. (2014). InAsBi photodiode operating in the MWIR. In 2014 IEEE PHOTONICS CONFERENCE (IPC) (pp. 356-357). Retrieved from https://www.webofscience.com/
Planar InAs p-i-n photodiodes fabricated using ion implantation (Conference Paper)
White, B. S., Sandall, I., & Tan, C. H. (2014). Planar InAs p-i-n photodiodes fabricated using ion implantation. In 2014 IEEE PHOTONICS CONFERENCE (IPC) (pp. 352-353). Retrieved from https://www.webofscience.com/
Demonstration of an InAsBi photodiode operating in the MWIR (Conference Paper)
Sandall, I. C., Bastiman, F., White, B., Richards, R. D., David, J., & Tan, C. H. (2014). Demonstration of an InAsBi photodiode operating in the MWIR. In EMERGING TECHNOLOGIES IN SECURITY AND DEFENCE II AND QUANTUM-PHYSICS-BASED INFORMATION SECURITY III Vol. 9254. doi:10.1117/12.2069697DOI: 10.1117/12.2069697
Temperature dependence of impact ionization in InAs (vol 21, pg 8630, 2013) (Journal article)
Sandall, I. C., Ng, J. S., Xie, S., Ker, P. J., & Tan, C. H. (2014). Temperature dependence of impact ionization in InAs (vol 21, pg 8630, 2013). OPTICS EXPRESS, 22(21), 25923. doi:10.1364/OE.22.025923DOI: 10.1364/OE.22.025923
Sandall, I. C., Bastiman, F., White, B., Richards, R., Mendes, D., David, J. P. R., & Tan, C. H. (2014). Demonstration of InAsBi photoresponse beyond 3.5 μm. Applied Physics Letters, 104(17). doi:10.1063/1.4873403DOI: 10.1063/1.4873403
2013
Sandall, I. C., Zhang, S., & Tan, C. H. (2013). Linear array of InAs APDs operating at 2 μm. OPTICS EXPRESS, 21(22), 25780-25787. doi:10.1364/OE.21.025780DOI: 10.1364/OE.21.025780
Sandall, I. C., Ng, J. S., David, J. P. R., Liu, H., & Tan, C. H. (2013). Evaluation of InAs quantum dots on Si as optical modulator. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(9). doi:10.1088/0268-1242/28/9/094002DOI: 10.1088/0268-1242/28/9/094002
Sandall, I. C., Ng, J. S., Xie, S., Ker, P. J., & Tan, C. H. (2013). Temperature dependence of impact ionization in InAs. OPTICS EXPRESS, 21(7), 8630-8637. doi:10.1364/OE.21.008630DOI: 10.1364/OE.21.008630
2012
Electrical modulation of the optical properties of mid-infrared metamaterials (Journal article)
Larsen, K., Austin, D., Sandall, I. C., Davies, D. G., Revin, D. G., Cockburn, J. W., . . . Wilson, L. R. (2012). Electrical modulation of the optical properties of mid-infrared metamaterials. APPLIED PHYSICS LETTERS, 101(25). doi:10.1063/1.4772545DOI: 10.1063/1.4772545
InAs Quantum Dot Photodetector operating at 1.3 μm grown on Silicon (Conference Paper)
Sandall, I. C., Ng, J. S., David, J. P., Tan, C. H., Wang, T., & Liu, H. (2012). InAs Quantum Dot Photodetector operating at 1.3 μm grown on Silicon. In 2012 IEEE PHOTONICS CONFERENCE (IPC) (pp. 167-+). Retrieved from https://www.webofscience.com/
Planar InAs photodiodes fabricated using He ion implantation (Conference Paper)
Sandall, I., Tan, C. H., Smith, A., & Gwilliam, R. (2012). Planar InAs photodiodes fabricated using He ion implantation. In 2012 IEEE PHOTONICS CONFERENCE (IPC) (pp. 165-+). Retrieved from https://www.webofscience.com/
Sandall, I., Ng, J. S., David, J. P. R., Tan, C. H., Wang, T., & Liu, H. (2012). 1300 nm wavelength InAs quantum dot photodetector grown on silicon. OPTICS EXPRESS, 20(10), 10446-10452. doi:10.1364/OE.20.010446DOI: 10.1364/OE.20.010446
Sandall, I., Tan, C. H., Smith, A., & Gwilliam, R. (2012). Planar InAs photodiodes fabricated using He ion implantation. OPTICS EXPRESS, 20(8), 8575-8583. doi:10.1364/OE.20.008575DOI: 10.1364/OE.20.008575
2011
Sandall, I. C., Xie, S., Xie, J., & Tan, C. H. (2011). High temperature and wavelength dependence of avalanche gain of AlAsSb avalanche photodiodes. OPTICS LETTERS, 36(21), 4287-4289. doi:10.1364/OL.36.004287DOI: 10.1364/OL.36.004287
2010
Sandall, I. C., Porter, N. E., Wagner, M., Schneider, H., Winnerl, S., Helm, M., & Wilson, L. (2010). Terahertz optical sideband emission in self-assembled quantum dots. APPLIED PHYSICS LETTERS, 96(20). doi:10.1063/1.3429681DOI: 10.1063/1.3429681
X-shaped plasmonic antenna on a quantum cascade laser (Journal article)
Austin, D., Mullin, N., Luxmoore, I., Sandall, I. C., Cullis, A. G., Bismuto, A., . . . Wilson, L. R. (2010). X-shaped plasmonic antenna on a quantum cascade laser. APPLIED PHYSICS LETTERS, 96(15). doi:10.1063/1.3380660DOI: 10.1063/1.3380660
2008
Origin of temperature-dependent threshold current in p-doped and undoped In(Ga)As quantum dot lasers (<i>Invited paper</i>) (Journal article)
Smowton, P. M., George, A., Sandall, I. C., Hopkinson, M., & Liu, H. -Y. (2008). Origin of temperature-dependent threshold current in p-doped and undoped In(Ga)As quantum dot lasers (<i>Invited paper</i>). IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 14(4), 1162-1170. doi:10.1109/JSTQE.2008.920040DOI: 10.1109/JSTQE.2008.920040
2007
Identifying the origin of non-radiative recombination in ln(Ga)As quantum dot lasers (Conference Paper)
Smowton, P. M., George, A. A., Sandall, I. C., Liu, H. Y., & Hopkinson, M. (2007). Identifying the origin of non-radiative recombination in ln(Ga)As quantum dot lasers. In 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp. 429-+). Retrieved from https://www.webofscience.com/
Localized Auger recombination in quantum-dot lasers (Journal article)
Blood, P., Pask, H., Summers, H. D., & Sandall, I. (2007). Localized Auger recombination in quantum-dot lasers. IEEE JOURNAL OF QUANTUM ELECTRONICS, 43(11-12), 1140-1146. doi:10.1109/JQE.2007.907541DOI: 10.1109/JQE.2007.907541
Temperature-dependent gain and threshold in P-doped quantum dot lasers (Journal article)
Smowton, P. M., Sandall, I. C., Mowbray, D. J., Liu, H. Y., & Hopkinson, M. (2007). Temperature-dependent gain and threshold in P-doped quantum dot lasers. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 13(5), 1261-1266. doi:10.1109/JSTQE.2007.903375DOI: 10.1109/JSTQE.2007.903375
Nonradiative recombination in. multiple layer In(Ga)As quantum-dot lasers (Journal article)
Sandall, I. C., Smowton, P. M., Liu, H. -Y., & Hopkinson, M. (2007). Nonradiative recombination in. multiple layer In(Ga)As quantum-dot lasers. IEEE JOURNAL OF QUANTUM ELECTRONICS, 43(7-8), 698-703. doi:10.1109/JQE.2007.901583DOI: 10.1109/JQE.2007.901583
Maximising the gain - Optimising the carrier distribution in InGaAs quantum dot lasers (Conference Paper)
Smowton, P. M., Sandall, I. C., Mowbray, D. J., Liu, H. -Y., & Hopkinson, M. (2007). Maximising the gain - Optimising the carrier distribution in InGaAs quantum dot lasers. In PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XV Vol. 6468. doi:10.1117/12.702733DOI: 10.1117/12.702733
Recombination in quantum dot ensembles (Conference Paper)
Blood, P., Pask, H., Sandall, I., & Summers, H. (2007). Recombination in quantum dot ensembles. In NOVEL IN - PLANE SEMICONDUCTOR LASERS IV Vol. 6485. doi:10.1117/12.714264DOI: 10.1117/12.714264
Gain in <i>p</i>-doped quantum dot lasers (Journal article)
Smowton, P. M., Sandall, I. C., Liu, H. Y., & Hopkinson, M. (2007). Gain in <i>p</i>-doped quantum dot lasers. JOURNAL OF APPLIED PHYSICS, 101(1). doi:10.1063/1.2405738DOI: 10.1063/1.2405738
2006
Improved 1.3 &#x03BC;m In(Ga)As quantum dot lasers by engineering the GaAs spacer layers (Conference Paper)
Walker, C. L., Sandall, I. C., Smowton, P. M., Badcock, T. J., Mowbray, D. J., Liu, H. Y., & Hopkinson, M. (2006). Improved 1.3 &#x03BC;m In(Ga)As quantum dot lasers by engineering the GaAs spacer layers. In 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference. IEEE. doi:10.1109/cleo.2006.4628003DOI: 10.1109/cleo.2006.4628003
Localised recombination in quantum dot structures (Conference Paper)
Sandall, I. C., Pask, H. J., Smowton, P. M., Summers, H. D., Blood, P., HuiYun Liu., & Hopkinson, M. (2006). Localised recombination in quantum dot structures. In 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference. IEEE. doi:10.1109/cleo.2006.4628106DOI: 10.1109/cleo.2006.4628106
Maximising the gain and minimising the non-radiative recombination in 1.3μm quantum dot lasers (Conference Paper)
Smowton, P. M., Sandall, I. C., Walker, C. L., Mowbray, D. J., Liu, H. Y., & Hopkinson, M. (2006). Maximising the gain and minimising the non-radiative recombination in 1.3μm quantum dot lasers. In Conference Digest - IEEE International Semiconductor Laser Conference (pp. 75-76).
Measurement of modal absorption, gain and recombination in p-doped and intrinsic quantum dot structures (Conference Paper)
Sandall, I. C., Walker, C. L., Smowton, P. M., Mowbray, D. J., Liu, H. Y., & Hopkinson, M. (2006). Measurement of modal absorption, gain and recombination in p-doped and intrinsic quantum dot structures. In IEE PROCEEDINGS-OPTOELECTRONICS Vol. 153 (pp. 316-320). doi:10.1049/ip-opt:20060042DOI: 10.1049/ip-opt:20060042
The effect of p - doping in In(Ga)As quantum dot lasers (Conference Paper)
Sandall, I. C., Walker, C. L., Smowton, P. M., Badcock, T., Mowbray, D. J., Liu, H. Y., & Hopkinson, M. (2006). The effect of p - doping in In(Ga)As quantum dot lasers. In 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference. IEEE. doi:10.1109/cleo.2006.4628109DOI: 10.1109/cleo.2006.4628109
Temperature dependence of threshold current in <i>p</i>-doped quantum dot lasers (Journal article)
Sandall, I. C., Smowton, P. M., Thomson, J. D., Badcock, T., Mowbray, D. J., Liu, H. -Y., & Hopkinson, M. (2006). Temperature dependence of threshold current in <i>p</i>-doped quantum dot lasers. APPLIED PHYSICS LETTERS, 89(15). doi:10.1063/1.2361167DOI: 10.1063/1.2361167
Improved performance of 1.3-μm In(Ga)As quantum-dot lasers by modifying the temperature profile of the GaAs spacer layers (Journal article)
Walker, C. L., Sandall, I. C., Smowton, P. M., Mowbray, D. J., Liu, H. Y., Liew, S. L., & Hopkinson, M. (2006). Improved performance of 1.3-μm In(Ga)As quantum-dot lasers by modifying the temperature profile of the GaAs spacer layers. IEEE PHOTONICS TECHNOLOGY LETTERS, 18(13-16), 1557-1559. doi:10.1109/LPT.2006.879592DOI: 10.1109/LPT.2006.879592
Recombination mechanisms in 1.3-μm InAs quantum-dot lasers (Journal article)
Sandall, I. C., Smowton, P. M., Walker, C. L., Liu, H. Y., Hopkinson, M., & Mowbray, D. J. (2006). Recombination mechanisms in 1.3-μm InAs quantum-dot lasers. IEEE PHOTONICS TECHNOLOGY LETTERS, 18(5-8), 965-967. doi:10.1109/LPT.2006.873560DOI: 10.1109/LPT.2006.873560
The effect of <i>p</i> doping in InAs quantum dot lasers (Journal article)
Sandall, I. C., Smowton, P. M., Walker, C. L., Badcock, T., Mowbray, D. J., Liu, H. Y., & Hopkinson, M. (2006). The effect of <i>p</i> doping in InAs quantum dot lasers. APPLIED PHYSICS LETTERS, 88(11). doi:10.1063/1.2186078DOI: 10.1063/1.2186078
Characterisation of modulation doped quantum dot lasers (Conference Paper)
Smowton, P. M., Sandall, I. C., Walker, C. L., Thomson, J. D., Sobiesierski, A., Badcock, T., . . . Hopkinson, M. (2006). Characterisation of modulation doped quantum dot lasers. In NOVEL IN-PLANE SEMICONDUCTOR LASERS V Vol. 6133. doi:10.1117/12.650682DOI: 10.1117/12.650682
1.3 &#x003BC;m emitting, self assembled quantum dot lasers (Conference Paper)
Smowton, P. M., Sandall, I. C., Mowbray, D. J., Liu, H. Y., & Hopkinson, M. (2006). 1.3 &#x003BC;m emitting, self assembled quantum dot lasers. In LEOS 2006 - 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society. IEEE. doi:10.1109/leos.2006.279081DOI: 10.1109/leos.2006.279081
1.3μm emitting, self assembled quantum dot lasers (Conference Paper)
Smowton, P. M., Sandall, I. C., Mowbray, D. J., Liu, H. Y., & Hopkinson, M. (2006). 1.3μm emitting, self assembled quantum dot lasers. In 2006 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp. 867). Retrieved from https://www.webofscience.com/
2005
Recombination processes in inas quantum dot lasers containing high growth temperature spacer layers operating at 1.3 &#x03BC;m (Conference Paper)
Sandall, I. C., Walker, C. L., Smowton, P. M., Sellers, I. R., Mowbray, D. J., Liu, H. Y., & Hopkinson, M. (n.d.). Recombination processes in inas quantum dot lasers containing high growth temperature spacer layers operating at 1.3 &#x03BC;m. In EQEC '05. European Quantum Electronics Conference, 2005.. IEEE. doi:10.1109/eqec.2005.1567193DOI: 10.1109/eqec.2005.1567193
The role of high growth temperature GaAs spacer layers in 1.3-μm In(Ga)As quantum-dot lasers (Journal article)
Walker, C. L., Sandall, I. C., Smowton, P. M., Sellers, I., Mowbray, D. J., Liu, H. Y., & Hopkinson, M. (2005). The role of high growth temperature GaAs spacer layers in 1.3-μm In(Ga)As quantum-dot lasers. IEEE PHOTONICS TECHNOLOGY LETTERS, 17(10), 2011-2013. doi:10.1109/LPT.2005.854393DOI: 10.1109/LPT.2005.854393
Growth and characterisation of multiple layer quantum dot lasers (Conference Paper)
Smowton, P. M., Walker, C. L., Sandall, I. C., Sellers, I. R., Mowbray, D. J., Liu, H. Y., . . . Hopkinson, M. (2005). Growth and characterisation of multiple layer quantum dot lasers. In Novel In-Plane Semiconductor Lasers IV Vol. 5738 (pp. 332-346). doi:10.1117/12.593278DOI: 10.1117/12.593278
AlGaInP laser diodes incorporating a 3λ/4 multiple quantum barrier -: art. no. 021102 (Journal article)
Sobiesierski, A., Sandall, I. C., Smowton, P. M., Blood, P., Krysa, A. B., Brown, M. R., . . . Wilks, S. P. (2005). AlGaInP laser diodes incorporating a 3λ/4 multiple quantum barrier -: art. no. 021102. APPLIED PHYSICS LETTERS, 86(2). doi:10.1063/1.1849847DOI: 10.1063/1.1849847
2004
Improved gain and loss performance of 1.3 μm quantum dot lasers using high growth temperature GaAs Spacer layer (Conference Paper)
Walker, C. L., Sandall, I. C., & Smowton, P. M. (2004). Improved gain and loss performance of 1.3 μm quantum dot lasers using high growth temperature GaAs Spacer layer. In 2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp. 212-213). Retrieved from https://www.webofscience.com/
