2023
Reliability and failure modelling of microelectronic packages based on ultrasonic nondestructive evaluation data (Journal article)
Wang, H., Zhang, G. -M., Ma, H., Zhang, X., Manzanera, T. P., Braden, D., . . . Salleh, M. A. A. M. (2023). Reliability and failure modelling of microelectronic packages based on ultrasonic nondestructive evaluation data. NDT & E International, 138, 102856. doi:10.1016/j.ndteint.2023.102856DOI: 10.1016/j.ndteint.2023.102856
Baishya, K., Harvey, D. M., Manzanera, T. P., Zhang, G., & Braden, D. R. (2023). Failure patterns of solder joints identified through lifetime vibration tests. NONDESTRUCTIVE TESTING AND EVALUATION, 38(1), 147-171. doi:10.1080/10589759.2022.2084616DOI: 10.1080/10589759.2022.2084616
2020
Mitrovic, I. Z., Das, P., Jones, L., Gibbon, J., Dhanak, V. R., Mahapatra, R., . . . Thayne, I. G. (2020). (Invited) Band Line-up of High-k Oxides on GaN. ECS Transactions, 97(1), 67-81. doi:10.1149/09701.0067ecstDOI: 10.1149/09701.0067ecst
Das, P., Jones, L. A. H., Gibbon, J. T., Dhanak, V. R., Partida-Manzanera, T., Roberts, J. W., . . . Mitrovic, I. Z. (2020). Band Line-up Investigation of Atomic Layer Deposited TiAlO and GaAlO on GaN. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 9(6). doi:10.1149/2162-8777/aba4f4DOI: 10.1149/2162-8777/aba4f4
2019
Partida-Manzanera, T., Zaidi, Z. H., Roberts, J. W., Dolmanan, S. B., Lee, K. B., Houston, P. A., . . . Potter, R. J. (2019). Comparison of atomic layer deposited Al<sub>2</sub>O<sub>3</sub> and (Ta<sub>2</sub>O<sub>5</sub>)<sub>0.12</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>0.88</sub> gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors. JOURNAL OF APPLIED PHYSICS, 126(3). doi:10.1063/1.5049220DOI: 10.1063/1.5049220
2017
Partida Manzanera, T. (2017, December 14). Atomic Layer Deposition of Tantalum Doped Aluminium Oxide as a Gate Dielectric for GaN-based Power Transistors.
2016
Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta<sub>2</sub>O<sub>5</sub>)<i><sub>x</sub></i>(Al<sub>2</sub>O<sub>3</sub>)<sub>1-<i>x</i></sub> as potential gate dielectrics for GaN/Al<i><sub>x</sub></i>Ga<sub>1-<i>x</i></sub>N/GaN high electron mobility transistors (Journal article)
Partida-Manzanera, T., Roberts, J. W., Bhat, T. N., Zhang, Z., Tan, H. R., Dolmanan, S. B., . . . Potter, R. J. (2016). Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta<sub>2</sub>O<sub>5</sub>)<i><sub>x</sub></i>(Al<sub>2</sub>O<sub>3</sub>)<sub>1-<i>x</i></sub> as potential gate dielectrics for GaN/Al<i><sub>x</sub></i>Ga<sub>1-<i>x</i></sub>N/GaN high electron mobility transistors. JOURNAL OF APPLIED PHYSICS, 119(2). doi:10.1063/1.4939298DOI: 10.1063/1.4939298
