Dr Max Birkett

Research Software Engineer (Materials Innovation Factory) Chemistry

Publications

2020

Vacancy-Ordered Double Perovskite Cs2TeI6 Thin Films for Optoelectronics (Journal article)

Vazquez-Fernandez, I., Mariotti, S., Hutter, O. S., Birkett, M., Veal, T. D., Hobson, T. D. C., . . . Durose, K. (n.d.). Vacancy-Ordered Double Perovskite Cs2TeI6 Thin Films for Optoelectronics. Chemistry of Materials. doi:10.1021/acs.chemmater.0c02150

DOI: 10.1021/acs.chemmater.0c02150

2019

Resonant doping for high mobility transparent conductors: the case of Mo-doped In2O3 (Journal article)

Swallow, J. E. N., Williamson, B. A. D., Sathasivam, S., Birkett, M., Featherstone, T. J., Murgatroyd, P. A. E., . . . Veal, T. D. (2020). Resonant doping for high mobility transparent conductors: the case of Mo-doped In2O3. Materials Horizons, 7(1), 236-243. doi:10.1039/c9mh01014a

DOI: 10.1039/c9mh01014a

Band Alignments, Band Gap, Core Levels, and Valence Band States in Cu3BiS3 for Photovoltaics (Journal article)

Whittles, T. J., Veal, T. D., Savory, C. N., Yates, P. J., Murgatroyd, P. A. E., Gibbon, J. T., . . . Dhanak, V. R. (2019). Band Alignments, Band Gap, Core Levels, and Valence Band States in Cu3BiS3 for Photovoltaics. ACS APPLIED MATERIALS & INTERFACES, 11(30), 27033-27047. doi:10.1021/acsami.9b04268

DOI: 10.1021/acsami.9b04268

Current enhancement via a TiO2 window layer for CSS Sb2Se3 solar cells: performance limits and high Voc (Journal article)

Phillips, L. J., Savory, C. N., Hutter, O. S., Yates, P. J., Shiel, H., Mariotti, S., . . . Major, J. D. (2019). Current enhancement via a TiO2 window layer for CSS Sb2Se3 solar cells: performance limits and high Voc. IEEE Journal of Photovoltaics, 9(2), 544-551. doi:10.1109/JPHOTOV.2018.2885836

DOI: 10.1109/JPHOTOV.2018.2885836

Nitrogen pair-induced temperature insensitivity of the band gap of GaNSb alloys (Journal article)

Linhart, W. M., Rajpalke, M. K., Birkett, M., Walker, D., Ashwin, M. J., & Veal, T. D. (2019). Nitrogen pair-induced temperature insensitivity of the band gap of GaNSb alloys. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 52(4). doi:10.1088/1361-6463/aaeec9

DOI: 10.1088/1361-6463/aaeec9

2018

A hard x-ray photoemission study of transparent conducting fluorine-doped tin dioxide (Conference Paper)

Swallow, J. E. N., Williamson, B. A. D., Birkett, M., Abbott, A., Farnworth, M., Featherstone, T. J., . . . IEEE. (2018). A hard x-ray photoemission study of transparent conducting fluorine-doped tin dioxide. In 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) (pp. 3051-3055). Retrieved from http://gateway.webofknowledge.com/

Growth and Characterization of Sb2Se3 Single Crystals for Fundamental Studies (Conference Paper)

Hobson, T. D. C., Hutter, O. S., Birkett, M., Veal, T. D., Durose, K., & IEEE. (2018). Growth and Characterization of Sb2Se3 Single Crystals for Fundamental Studies. In 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) (pp. 0818-0822). Retrieved from http://gateway.webofknowledge.com/

Band gap temperature-dependence and exciton-like state in copper antimony sulphide, CuSbS2 (Journal article)

Birkett, M., Savory, C. N., Rajpalke, M. K., Linhart, W. M., Whittles, T. J., Gibbon, J. T., . . . Veal, T. D. (2018). Band gap temperature-dependence and exciton-like state in copper antimony sulphide, CuSbS2. APL Materials, 6(8). doi:10.1063/1.5030207

DOI: 10.1063/1.5030207

Band gap temperature-dependence of close-space sublimation grown Sb2Se3 by photo-reflectance (Journal article)

Birkett, M., Linhart, W., Stoner, J., Phillips, L. J., Durose, K., Alaria, J., . . . Veal, T. D. (2018). Band gap temperature-dependence of close-space sublimation grown Sb2Se3 by photo-reflectance. APL Materials, 6(8), 8 pages. doi:10.1063/1.5027157

DOI: 10.1063/1.5027157

Self-Compensation in Transparent Conducting F-Doped SnO2 (Journal article)

Swallow, J. E. N., Williamson, B. A. D., Whittles, T. J., Birkett, M., Featherstone, T. J., Peng, N., . . . Veal, T. D. (2018). Self-Compensation in Transparent Conducting F-Doped SnO2. ADVANCED FUNCTIONAL MATERIALS, 28(4). doi:10.1002/adfm.201701900

DOI: 10.1002/adfm.201701900

2017

Core Levels, Band Alignments, and Valence-Band States in CuSbS2 for Solar Cell Applications (Journal article)

Whittles, T. J., Veal, T. D., Savory, C. N., Welch, A. W., Lucas, F. W. D. S., Gibbon, J. T., . . . Dhanak, V. R. (2017). Core Levels, Band Alignments, and Valence-Band States in CuSbS2 for Solar Cell Applications. ACS APPLIED MATERIALS & INTERFACES, 9(48), 41916-41926. doi:10.1021/acsami.7b14208

DOI: 10.1021/acsami.7b14208

Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitride Cu3N (Journal article)

Birkett, M., Savory, C. N., Fioretti, A. N., Thompson, P., Muryn, C. A., Weerakkody, A. D., . . . Veal, T. D. (2017). Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitride Cu3N. Physical Review B - Condensed Matter and Materials Physics, 95. doi:10.1103/PhysRevB.95.115201

DOI: 10.1103/PhysRevB.95.115201

2016

Optical properties of earth-abundant semiconductors for renewable energy (Thesis / Dissertation)

Birkett, M. (2016, July 4). Optical properties of earth-abundant semiconductors for renewable energy.

2014

Contactless electroreflectance and theoretical studies of band gap and spin-orbit splitting in InP1-xBix dilute bismide with x <= 0.034 (Journal article)

Kopaczek, J., Kudrawiec, R., Polak, M. P., Scharoch, P., Birkett, M., Veal, T. D., . . . Wang, S. (2014). Contactless electroreflectance and theoretical studies of band gap and spin-orbit splitting in InP1-xBix dilute bismide with x <= 0.034. APPLIED PHYSICS LETTERS, 105(22). doi:10.1063/1.4903179

DOI: 10.1063/1.4903179

Bi-induced band gap reduction in epitaxial InSbBi alloys (Journal article)

Rajpalke, M., Linhart, W., Yu, K. M., Birkett, M., Alaria, J., Bomphrey, J. J., . . . Veal, T. (2014). Bi-induced band gap reduction in epitaxial InSbBi alloys. Applied Physics Letters, 105(21). doi:10.1063/1.4902442

DOI: 10.1063/1.4902442

High Bi content GaSbBi alloys (Journal article)

Rajpalke, M. K., Linhart, W. M., Birkett, M., Yu, K. M., Alaria, J., Kopaczek, J., . . . Veal, T. D. (2014). High Bi content GaSbBi alloys. JOURNAL OF APPLIED PHYSICS, 116(4). doi:10.1063/1.4891217

DOI: 10.1063/1.4891217

2013

Growth and properties of GaSbBi alloys (Journal article)

Rajpalke, M. K., Linhart, W. M., Birkett, M., Yu, K. M., Scanlon, D. O., Buckeridge, J., . . . Veal, T. D. (2013). Growth and properties of GaSbBi alloys. APPLIED PHYSICS LETTERS, 103(14). doi:10.1063/1.4824077

DOI: 10.1063/1.4824077